JP2015023293A5 - - Google Patents
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- JP2015023293A5 JP2015023293A5 JP2014148938A JP2014148938A JP2015023293A5 JP 2015023293 A5 JP2015023293 A5 JP 2015023293A5 JP 2014148938 A JP2014148938 A JP 2014148938A JP 2014148938 A JP2014148938 A JP 2014148938A JP 2015023293 A5 JP2015023293 A5 JP 2015023293A5
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- Prior art keywords
- light emitting
- electrode
- disposed
- semiconductor layer
- emitting device
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- 239000004065 semiconductor Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 3
- 230000000875 corresponding Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000002093 peripheral Effects 0.000 claims 1
Claims (10)
前記基板上に配置される複数個の発光セルと、
隣接する２つの発光セルを電気的に接続するブリッジ電極と、
前記発光セルと前記ブリッジ電極との間に配置される絶縁層とを含み、
前記複数個の発光セルは、第１導電型半導体層、第２導電型半導体層、前記第１導電型半導体層と前記第２導電型半導体層との間の活性層を含む発光構造物と、前記第１導電型半導体層上の第１電極と、前記第２導電型半導体層上の第２電極とをそれぞれ含み、
前記ブリッジ電極は、
前記第１導電型半導体層の上面上に配置され、前記隣接する２つの発光セルのいずれか一方の第１電極に接する第１部分と、
前記第２導電型半導体層の上面上に配置され、前記隣接する２つの発光セルのいずれか他方の第２電極に接する第２部分と、
前記第１部分と前記第２部分との間に配置される第３部分とを含み、
第１凹凸が、前記隣接する２つの発光セルの間に位置する前記基板の上面の第１領域に形成され、
前記ブリッジ電極の前記第３部分は前記第１領域上に配置され、
前記第１凹凸に対応する第２凹凸が、前記ブリッジ電極の前記第３部分の上面に形成される、発光素子。 A substrate,
A plurality of light emitting cells disposed on the substrate;
A bridge electrode that electrically connects two adjacent light emitting cells ;
An insulating layer disposed between the light emitting cell and the bridge electrode;
The plurality of light emitting cells includes a first conductive semiconductor layer, a second conductive semiconductor layer, a light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode on the first conductivity type semiconductor layer and a second electrode on the second conductivity type semiconductor layer,
The bridge electrode is
A first portion disposed on an upper surface of the first conductive type semiconductor layer and in contact with a first electrode of one of the two adjacent light emitting cells;
A second portion disposed on the upper surface of the second conductive semiconductor layer and in contact with the other second electrode of the two adjacent light emitting cells;
A third portion disposed between the first portion and the second portion;
A first unevenness is formed in a first region on the upper surface of the substrate located between the two adjacent light emitting cells,
The third portion of the bridge electrode is disposed on the first region;
A light emitting device , wherein second irregularities corresponding to the first irregularities are formed on an upper surface of the third portion of the bridge electrode .
前記曲面の形状は、前記第１凹凸の外周面の形状と同一である、請求項１ないし３のいずれかに記載の発光素子。 A portion of the insulating layer disposed on the first region has a curved surface,
4. The light emitting device according to claim 1, wherein a shape of the curved surface is the same as a shape of an outer peripheral surface of the first unevenness .
前記第４部分の厚さが、前記第１部分、前記第２部分または前記第３部分のそれぞれの厚さよりも小さい、請求項１ないし９のいずれかに記載の発光素子。 The bridge electrode further includes a fourth portion disposed between the first portion and the third portion and between the second portion and the third portion,
The light emitting device according to claim 1, wherein a thickness of the fourth portion is smaller than a thickness of each of the first portion, the second portion, or the third portion.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20130085959 | 2013-07-22 | ||
| KR10-2013-0085959 | 2013-07-22 | ||
| KR1020140083640A KR102194805B1 (en) | 2013-07-22 | 2014-07-04 | Light emitting device |
| KR10-2014-0083640 | 2014-07-04 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015023293A JP2015023293A (en) | 2015-02-02 |
| JP2015023293A5 true JP2015023293A5 (en) | 2017-08-03 |
| JP6442177B2 JP6442177B2 (en) | 2018-12-19 |
Family
ID=52482716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014148938A Active JP6442177B2 (en) | 2013-07-22 | 2014-07-22 | Light emitting element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6442177B2 (en) |
| KR (1) | KR102194805B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7296482B2 (en) | 2020-03-03 | 2023-06-22 | 東莞市中麒光電技術有限公司 | Light emitting diode and manufacturing method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102343087B1 (en) * | 2017-04-28 | 2021-12-24 | 엘지이노텍 주식회사 | Semiconductor device package |
| KR102619665B1 (en) * | 2018-06-29 | 2023-12-29 | 삼성전자주식회사 | Light emitting device |
| CN110957404A (en) * | 2019-12-17 | 2020-04-03 | 佛山市国星半导体技术有限公司 | High-voltage LED chip and manufacturing method thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1897151A4 (en) * | 2005-06-22 | 2010-03-10 | Seoul Opto Device Co Ltd | Light emitting device and method of manufacturing the same |
| KR100966372B1 (en) * | 2007-11-23 | 2010-06-28 | 삼성엘이디 주식회사 | Monolithic light emitting diode array and method of manufacturing the same |
| US20100176751A1 (en) * | 2008-05-20 | 2010-07-15 | Panasonic Corporation | Semiconductor light-emitting device as well as light source device and lighting system including the same |
| TW201011890A (en) * | 2008-09-04 | 2010-03-16 | Formosa Epitaxy Inc | Alternating current light emitting device |
| KR101601624B1 (en) * | 2010-02-19 | 2016-03-09 | 삼성전자주식회사 | Semiconductor light emitting device having a multi-cell array, light emitting module and illumination apparatus |
| KR101014155B1 (en) * | 2010-03-10 | 2011-02-10 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| KR101650518B1 (en) * | 2010-09-13 | 2016-08-23 | 에피스타 코포레이션 | Light-emitting structure |
| KR20130035658A (en) * | 2011-09-30 | 2013-04-09 | 서울옵토디바이스주식회사 | Method for fabricating a substrate for light emitting diode device |
| JP6176032B2 (en) * | 2013-01-30 | 2017-08-09 | 日亜化学工業株式会社 | Semiconductor light emitting device |
-
2014
- 2014-07-04 KR KR1020140083640A patent/KR102194805B1/en active IP Right Grant
- 2014-07-22 JP JP2014148938A patent/JP6442177B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7296482B2 (en) | 2020-03-03 | 2023-06-22 | 東莞市中麒光電技術有限公司 | Light emitting diode and manufacturing method thereof |
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