JP2013211537A5 - - Google Patents

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Publication number
JP2013211537A5
JP2013211537A5 JP2013035320A JP2013035320A JP2013211537A5 JP 2013211537 A5 JP2013211537 A5 JP 2013211537A5 JP 2013035320 A JP2013035320 A JP 2013035320A JP 2013035320 A JP2013035320 A JP 2013035320A JP 2013211537 A5 JP2013211537 A5 JP 2013211537A5
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gate electrode
insulating layer
opening
overlap
semiconductor
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JP2013035320A
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JP2013211537A (en
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Claims (4)

円形状の開口を有するゲート電極と、A gate electrode having a circular opening;
前記ゲート電極の開口の側面と重なるように設けられた絶縁層と、An insulating layer provided to overlap the side surface of the opening of the gate electrode;
前記絶縁層を介して前記ゲート電極の開口の側面と重なるように設けられた半導体層と、を有する第１のトランジスタと、A first transistor having a semiconductor layer provided so as to overlap with a side surface of the opening of the gate electrode with the insulating layer interposed therebetween;
前記第１のトランジスタの下部に設けられた第２のトランジスタと、を有することを特徴とする半導体装置。And a second transistor provided below the first transistor. 円形状の開口を有するゲート電極と、A gate electrode having a circular opening;
前記ゲート電極の開口の側面と重なるように設けられた絶縁層と、An insulating layer provided to overlap the side surface of the opening of the gate electrode;
前記絶縁層を介して前記ゲート電極の開口の側面と重なるように設けられた半導体層と、A semiconductor layer provided so as to overlap a side surface of the opening of the gate electrode through the insulating layer;
前記ゲート電極、前記絶縁層、及び前記半導体層の下部に設けられた単結晶半導体基板と、を有することを特徴とする半導体装置。A semiconductor device comprising: the gate electrode; the insulating layer; and a single crystal semiconductor substrate provided below the semiconductor layer. 円形状の開口を有するゲート電極と、A gate electrode having a circular opening;
前記ゲート電極の開口の側面と重なるように設けられた第１の絶縁層と、A first insulating layer provided so as to overlap a side surface of the opening of the gate electrode;
前記第１の絶縁層を介して前記ゲート電極の開口の側面と重なるように設けられた半導体層と、A semiconductor layer provided so as to overlap with a side surface of the opening of the gate electrode through the first insulating layer;
前記ゲート電極、前記第１の絶縁層、及び前記半導体層の下部に設けられた単結晶半導体基板と、A single crystal semiconductor substrate provided under the gate electrode, the first insulating layer, and the semiconductor layer;
前記ゲート電極、前記第２の絶縁層、及び前記半導体層の上部に設けられた第２の絶縁層と、A second insulating layer provided on top of the gate electrode, the second insulating layer, and the semiconductor layer;
前記第２の絶縁層のコンタクトホールに設けられ、前記単結晶半導体基板と電気的に接続された電極と、を有することを特徴とする半導体装置。A semiconductor device comprising: an electrode provided in a contact hole of the second insulating layer and electrically connected to the single crystal semiconductor substrate. 請求項１乃至請求項３のいずれか一項において、In any one of Claims 1 thru | or 3,
前記ゲート電極は、前記円形状の開口を複数個有していることを特徴とする半導体装置。The semiconductor device according to claim 1, wherein the gate electrode has a plurality of the circular openings.
JP2013035320A 2012-02-29 2013-02-26 Semiconductor device Withdrawn JP2013211537A (en)

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JP2012044109 2012-02-29
JP2013035320A JP2013211537A (en) 2012-02-29 2013-02-26 Semiconductor device

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JP2013211537A5 true JP2013211537A5 (en) 2016-04-07

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JP2019012943A Active JP6745924B2 (en) 2012-02-29 2019-01-29 Semiconductor device
JP2020132355A Withdrawn JP2020191470A (en) 2012-02-29 2020-08-04 Semiconductor device
JP2022020164A Active JP7410991B2 (en) 2012-02-29 2022-02-14 semiconductor equipment
JP2022033537A Active JP7441869B2 (en) 2012-02-29 2022-03-04 semiconductor equipment
JP2022033538A Active JP7470142B2 (en) 2012-02-29 2022-03-04 Semiconductor Device
JP2022055695A Active JP7395639B2 (en) 2012-02-29 2022-03-30 semiconductor equipment
JP2022172869A Pending JP2023002775A (en) 2012-02-29 2022-10-28 Semiconductor device
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JP2023127121A Pending JP2023156395A (en) 2012-02-29 2023-08-03 Semiconductor device
JP2023127127A Pending JP2023156397A (en) 2012-02-29 2023-08-03 Semiconductor device
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JP2020132355A Withdrawn JP2020191470A (en) 2012-02-29 2020-08-04 Semiconductor device
JP2022020164A Active JP7410991B2 (en) 2012-02-29 2022-02-14 semiconductor equipment
JP2022033537A Active JP7441869B2 (en) 2012-02-29 2022-03-04 semiconductor equipment
JP2022033538A Active JP7470142B2 (en) 2012-02-29 2022-03-04 Semiconductor Device
JP2022055695A Active JP7395639B2 (en) 2012-02-29 2022-03-30 semiconductor equipment
JP2022172869A Pending JP2023002775A (en) 2012-02-29 2022-10-28 Semiconductor device
JP2023041660A Pending JP2023072072A (en) 2012-02-29 2023-03-16 Semiconductor device
JP2023127121A Pending JP2023156395A (en) 2012-02-29 2023-08-03 Semiconductor device
JP2023127127A Pending JP2023156397A (en) 2012-02-29 2023-08-03 Semiconductor device
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