JP3479375B2 - Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same - Google Patents

Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same

Info

Publication number
JP3479375B2
JP3479375B2 JP06827095A JP6827095A JP3479375B2 JP 3479375 B2 JP3479375 B2 JP 3479375B2 JP 06827095 A JP06827095 A JP 06827095A JP 6827095 A JP6827095 A JP 6827095A JP 3479375 B2 JP3479375 B2 JP 3479375B2
Authority
JP
Japan
Prior art keywords
metal oxide
oxide semiconductor
thin film
metal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06827095A
Other languages
Japanese (ja)
Other versions
JPH08264794A (en
Inventor
英樹 松村
Original Assignee
科学技術振興事業団
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 科学技術振興事業団 filed Critical 科学技術振興事業団
Priority to JP06827095A priority Critical patent/JP3479375B2/en
Publication of JPH08264794A publication Critical patent/JPH08264794A/en
Application granted granted Critical
Publication of JP3479375B2 publication Critical patent/JP3479375B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66969Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and a manufacturing method thereof.

Thin film transistors are widely used in the field of semiconductor electronics such as liquid crystal displays, integrated circuits and facsimile control circuits. The present invention configures a thin film semiconductor device having such a thin film transistor and a pn junction with a metal oxide semiconductor.

[0003]

2. Description of the Related Art A transistor used in a liquid crystal display or the like requires two kinds of transistors, a switching thin film transistor provided for each pixel and a high mobility transistor for controlling the entire screen. Conventionally, in order to obtain such a transistor, a method of attaching a pixel switch thin film transistor formed on amorphous silicon and a screen control transistor integrated circuit formed on single crystal silicon to the same substrate has been used. As a result, the wiring becomes complicated, which has been a factor in increasing the cost of the liquid crystal display.

Therefore, various methods have been developed for forming a screen control transistor on a glass substrate for a display when manufacturing a pixel switch thin film transistor. For example, there is a method of forming polysilicon by using laser heat treatment and forming a high mobility thin film transistor using the polysilicon. However, this method is not necessarily effective for increasing the area, and it is desired to develop a method for manufacturing a thin film transistor that can be manufactured at a low temperature using an inexpensive glass substrate.

[0005]

As described above, it has been difficult to form a thin film transistor using a conventional silicon semiconductor thin film over a large area at a low temperature by using an inexpensive glass substrate. In addition, miniaturization of semiconductor integrated circuits is advancing year by year, and it is necessary to develop devices with new structures.

The present invention provides a thin film transistor using a metal oxide semiconductor having a new structure, a thin film semiconductor device having a pn junction formed in the metal oxide semiconductor, and a method for manufacturing the same, which can solve the above problems. And
We have found a new perspective on metal oxide semiconductors such as cuprous oxide, which has not been largely omitted in the past, and brought new technologies to semiconductor integrated circuits.

[0007]

It is well known that metal oxides such as cuprous oxide, zinc oxide and aluminum oxide are semiconductors. Then, for example, in the case of cuprous oxide, it can be obtained by sputtering a copper plate using argon and oxygen gas, or by simply thermally oxidizing the copper plate. Metal oxide semiconductors have been considered to be applied to solar cells because they are easy to make and can easily be made large in area. However, in cuprous oxide, defects due to excess oxygen in metal oxides have been considered. Since the density of the acceptors made by the company could not be controlled at least in the past, a pn junction could not be formed. Therefore, metal oxide semiconductors such as cuprous oxide were forgotten from the mainstream of semiconductor research and were put to practical use as semiconductor devices. Didn't.

By the way, this metal oxide semiconductor also has an advantage to be noted. In the case of cuprous oxide, its carrier mobility is several tens cm 2 / Vs even though it is prepared at a low temperature.
And is relatively large. Further, such a metal oxide semiconductor can be obtained by oxidizing the metal film at a low temperature later. That is, a part of the metal thin film can be locally changed to the metal oxide semiconductor. This not only simplifies the manufacturing process of electronic devices such as thin film transistors using metal oxides such as cuprous oxide, but also facilitates the manufacture of new ultrafine structure devices such as silicon. This cannot be achieved by using semiconductors other than metal oxide semiconductors.

In the present invention, a thin film transistor is made of such a metal oxide semiconductor. In addition, by introducing hydrogen or the like into defects due to excess oxygen, which is known in some metal oxide semiconductors such as cuprous oxide, defects are controlled, and carrier density and conductivity type are controlled. The metal oxide semiconductor thus controlled is doped with impurities so that a good pn junction can be obtained. On the contrary, for metal oxide semiconductors such as zinc oxide where defects are caused by lack of oxygen, the defects are controlled by introducing oxygen, hydrogen, etc. to control carrier density and conductivity type. The metal oxide semiconductor thus controlled was doped with impurities so that a good pn junction could be obtained.

FIG. 1 exemplifies the basic structure (1) of the present invention in the case of a structure in which a thin film transistor has a gate electrode, and explains the principle of a manufacturing method thereof. Figure 1
In (a) and (b), 1 is a substrate.

Reference numeral 2 is an electrode metal. Reference numeral 3 is an insulating film.
Reference numeral 4 denotes a metal film, which becomes a semiconductor by oxidizing copper, zinc or the like. The film thickness of the metal film is, for example, about 0.3 μm, and is a thin film of about 0.6 μm after the oxidation treatment.

Reference numeral 5 is a metal oxide semiconductor produced by oxidizing the metal film 4. By forming a lead-out electrode by forming a protective film (not shown) on the structure of FIG. 1A, for example, a thin film transistor having the electrode metal 2 as a gate electrode can be manufactured.

FIG. 1 (b) shows a method of manufacturing the structure of FIG. 1 (a). The manufacturing method will be described in the order of the numbers shown. (1) Electrode metal 2 on substrate 1 of insulator, silicon semiconductor, etc.
Are formed and covered with the insulating film 3.

(2) A metal film 4 of, for example, copper or zinc is formed on the insulating film 3. (3) Partial region of the metal film 4 is oxidized by ion implantation, thermal oxidation, plasma oxidation or the like.

Further, if necessary, hydrogen is introduced into the metal oxide semiconductor region to control defects in the metal oxide semiconductor due to excess oxygen, thereby controlling the carrier density and conductivity type. . Alternatively, when a defect is caused by lack of oxygen, the defect is controlled by introducing oxygen or hydrogen, and the carrier density and conductivity type are controlled.

FIG. 2 shows a basic configuration (2) of the present invention, which is pn
The principle structure and manufacturing method of a metal oxide semiconductor having a junction will be described. Fig. 2 (a) shows the principle structure, and Fig. 2 (b) shows the principle of the manufacturing method.

In FIG. 2A, 11 is a substrate 13
Is a metal oxide semiconductor, which is a semiconductor of the first conductivity type.

Reference numeral 15 is a joint. Reference numeral 16 is a metal oxide semiconductor, which is a second conductivity type semiconductor. Figure 2 (a)
On the other hand, a semiconductor device can be obtained by forming a protective film and electrodes to form a diode, or increasing the number of junctions to form a transistor.

FIG. 2 (b) shows a method of manufacturing the principle structure of FIG. 2 (a). In FIG. 2 (b), 11 is a substrate.

Reference numeral 12 is a metal film, which becomes a semiconductor by oxidizing copper, zinc or the like. Reference numeral 13 is a metal oxide semiconductor (first conductor).

Reference numeral 14 denotes an intrinsic semiconductor region, which irradiates the metal oxide semiconductor 13 with hydrogen or the like to remove defects from excess oxygen in the metal oxide semiconductor (first conductor) 13, This is a semiconductorized region. Alternatively, when oxygen is insufficient and a defect is generated, oxygen or hydrogen or the like is introduced to remove the defect and make it an intrinsic semiconductor.

Reference numeral 15 is a joint portion. Reference numeral 16 denotes a second conductivity type metal oxide semiconductor, which is a metal oxide semiconductor device in which the intrinsic semiconductor region 14 is doped with an impurity (for example, chlorine) of the second conductivity type.

A method of manufacturing the thin film semiconductor device of FIG. 2A will be described with reference to FIG. (1) The metal film 12 is formed on the substrate 11 (for example, the thickness is 0.3 μm). (2) The metal film 12 is oxidized to form the first conductor type metal oxide semiconductor 13.

(3) The metal oxide semiconductor 13 is made into an intrinsic semiconductor by removing defects due to excess and deficiency of oxygen. (4) The intrinsic conductivity region 14 is doped with impurities of the second conductivity type, and the metal oxide semiconductor 13 of the first conductivity type and the pn
Form a bond.

[0025]

According to the present invention, a thin film transistor having a high mobility and a metal oxide thin film semiconductor having a pn junction can be manufactured at low cost by low temperature treatment. Further, as will be described later, the metallized oxide semiconductor withstands high-temperature heat treatment and has high mobility due to high-temperature annealing, so that it can be newly applied to integrated circuit technology for high-temperature heat treatment.

In the basic configuration (1) of the present invention shown in FIG.
Although the thin film transistor having a structure having a gate electrode has been described, the present invention can be applied to a thin film transistor having another structure such as a metal base transistor. Also,
According to the basic configuration of the present invention shown in FIG. 1, the width of the metal oxide semiconductor can be set to the extent that a tunnel current flows.
From this point as well, according to the present invention, a new integrated circuit technology that operates at high speed with a small current can be opened up.

[0027]

EXAMPLE An example of using cuprous oxide as the metal oxide semiconductor of the present invention will be described.

FIG. 3 is a diagram showing an example of characteristics of the oxide semiconductor used in the present invention. Figure 3 shows that after depositing a copper thin film by sputtering at room temperature in argon,
It shows the result of actually measuring the relationship of the mobility obtained by the Hall effect for the carrier density of the cuprous oxide semiconductor obtained by thermal oxidation at a temperature of about 50 ° C.

At this time, the polarity of cuprous oxide is p-type.
The carrier density is as small as 10 16 cm −3 or less, and the mobility is several 10 cm 2 / V · s. This carrier is supplied from an acceptor created by defects due to excess oxygen, but since the carrier density of cuprous oxide created by this method is low, hydrogen that can act on oxygen to remove defects of excess oxygen, It is possible to easily control the carrier density by ion-implanting sodium, potassium, copper, zinc or the like at about 10 11 to 10 12 cm -2 . Since the doping amount of the ion implantation is so low, the defects generated by the ion implantation can be suppressed, and the defects caused by the ion implantation can be sufficiently removed even by the low temperature heat treatment of about 400 ° C. or less.

The present invention focuses on the properties of such an oxide semiconductor such as cuprous oxide, and uses this to manufacture a thin film transistor at a low temperature. The present invention can be applied not only to cuprous oxide but also to other metal oxide semiconductors such as zinc oxide, aluminum oxide and tantalum oxide.

FIG. 4 shows Example 1 of the present invention, which is a thin film transistor. In FIG. 4, 21 is a glass substrate (corresponding to the substrate 1 in FIG. 1A).

Reference numeral 22 is a gate electrode (corresponding to the electrode metal 2 in FIG. 1 (a)). Reference numeral 23 is a gate insulating film (see FIG. 1).
It corresponds to the insulating film 3 in (a)). 24 and 24 'are metal films, which are source and drain electrodes.

Reference numeral 25 is a metal oxide semiconductor, which is obtained by oxidizing the metal films 24 and 24 '. Reference numeral 26 is an insulating film.

In FIG. 4, an insulating protective film (see step (6) in FIG. 5) is further formed on the surfaces of the insulating film 26 and the metal oxide semiconductor 25, and the electrodes connected to the source and drain electrodes 24 and 24 'are drawn out. As a result, a thin film transistor having the gate electrode 22 is obtained.

FIG. 5 shows a method of manufacturing the thin film transistor of FIG. Step (1) A metal such as chromium or aluminum is deposited on the glass substrate 21 and is formed into a gate electrode by photoresist processing. In this step, first, the first pattern mask is used. Further, in the present invention, since all the processing is performed at a low temperature, the glass used here does not need to be a high-priced glass having a high melting point.

A gate insulating film such as a silicon oxide film or a silicon nitride film is deposited on the entire step (2). Step (3) Deposit thin metal films 24 and 24 ′ that will be a metal oxide semiconductor such as copper, and perform photoresist processing to form transistor patterns including source and drain parts, and connection wiring parts from the source and drain parts. The pattern (not shown) is also molded. At this time, the second pattern mask is used.

Step (4) A film serving as a mask for the next oxidation step, for example, a silicon nitride film is deposited on the entire surface. At this time, a photoresist film may be used. And
After these films are deposited, the back surface of the glass substrate 21 is exposed to light, the photoresist film is exposed using the pattern of the gate electrode formed in step (1) as a mask, and holes are formed in the film by photoresist processing. In this step, the channel portion of the thin film transistor and the gate electrode 22 are self-aligned.

In step (5), the temperature is from 200 ° C to 400 ° C.
The metal film 24 exposed from the opening is oxidized by thermal oxidation or plasma oxidation of the whole at a low temperature of about a certain degree to change into a metal oxide semiconductor (the insulating film 26 has a hole in the step (4)). Have been opened).

Step (6) The formed transistor is entirely covered with an insulating film such as a silicon nitride film, and a hole is formed in the electrode extraction portion by photoresist processing. At this time,
A third mask pattern is used.

As described above, according to this embodiment, a thin film transistor can be manufactured with three mask patterns. In the above process, the oxidation of the metal film in the process (5) can be performed by means of oxygen ion implantation, thermal oxidation, plasma oxidation, oxygen ion irradiation, laser oxygen doping and the like.

Further, when it is necessary to control the carrier density and conductivity type by removing oxygen defects, or to control the p and n conductivity types and the resistivity by impurity doping, Between step (5) and step (6), it can be performed by means such as an ion implantation method, an ion doping method, a thermal diffusion method, a plasma thermal oxidation method, or a laser doping method.

At this time, one or more kinds of impurities such as hydrogen, lithium, sodium, potassium, copper, indium and zinc are added to the metal oxide semiconductor for the purpose of compensating for defects (in the case of cuprous oxide) due to excess oxygen. Can be introduced to control the carrier density and conductivity type of the conductor.
When irradiated with oxygen, defects increase and resistance increases.

Further, the conductivity type can be controlled by introducing an element such as fluorine, chlorine, phosphorus, arsenic or antimony into the metal oxide semiconductor whose carrier density and conductivity type are controlled as described above.

FIG. 6 shows an example of characteristics of the thin film transistor manufactured by the method of the first embodiment. The thin film transistor having the characteristics shown in FIG. 6 is as follows. The metal oxide semiconductor is cuprous oxide. The gate insulating film is a silicon oxide film, and the gate electrode is low resistance crystalline silicon.

Cuprous oxide is produced by thermally oxidizing a copper thin film deposited at 350 ° C. for about 18 minutes at room temperature by a sputtering method using argon gas for about 80 seconds. . In this thin film transistor,
The channel length L = 50 μm and the channel width 175 μm. FIG. 6 shows the characteristics of the square root of the source-drain current I DS of the thin film transistor as a function of the gate-source voltage V GS . The mobility can be obtained from this inclination. In the example of FIG. 6, the mobility is about 100 cm 2 / Vs
Is.

According to the present invention, the mobility is several tens cm 2 /
Large ones from Vs to near 100 cm 2 / Vs can be obtained. 7 is a second embodiment of the present invention, in which the present invention is applied to a metal base transistor.

FIG. 7 (a) shows the structure of a metal base transistor, and FIGS. 7 (b) and 7 (c) explain the manufacturing method thereof. In FIG. 7A, reference numeral 30 is a substrate.

30 'is a metal film (cuprous oxide). 31
Is a metal oxide semiconductor, is cuprous oxide (p-type), and is an emitter. 32 is a metal base and is copper (thickness is about 10Å to 50Å).

A metal oxide semiconductor 33 is cuprous oxide (p-type) and a collector. In Figure 7 (a),
The electrode wiring is not shown. A method of manufacturing the metal base transistor of FIG. 7A will be described with reference to FIG. Copper is used as the metal film. (1) Copper is formed on a substrate (glass, quartz, silicon, etc.) 30 to a thickness of about 0.3 μm by a sputtering method.

(2) Thermally oxidize the surface of copper 30 ″ in an electric furnace to consume copper 0.2 ″ with a thickness of 0.1 μm.
A cuprous oxide film 31 'having a thickness of m is formed. At this time,
Thermally oxidize in dry oxygen at 250 ° C for about 15 minutes.

(3) Copper is again deposited at room temperature on this.
The film thickness is about 0.1 μm. (4) Again, in the electric furnace, almost all of the newly deposited copper surface is thermally oxidized and converted to cuprous oxide. At this time, the oxidation time is delicately controlled to leave the extremely thin copper film 32 '(thickness 0.001 to 0.005 .mu.m) as the base of the metal base transistor. The thermal oxidation conditions at this time are 200 ° C. and about 160 minutes.

In the process of oxidation in FIG. 7 (b), as shown in FIG. 7 (c) (2), when the surface of the cuprous oxide 33 'is covered with a silicon nitride film, the result of FIG. 7 (c) (3) As described above, it is possible to easily take out the base electrode.

FIG. 8 shows a third embodiment of the present invention. Figure 8 shows
In a thin film transistor having a gate electrode, the source
The width of the metal insulator semiconductor between the drain electrodes is narrowed to the extent that a tunnel current flows, and the tunnel current is controlled by the gate voltage.

FIG. 8A shows the structure, and FIG. 8B shows an example of its characteristics. Reference numeral 121 in FIG. 8A is a substrate, which is made of glass, silicon, or the like.

122 is a gate electrode. Reference numeral 123 is a gate insulating film. 124 and 124 'are metal films,
It will be the source electrode and the drain electrode.

Reference numeral 125 is a metal oxide semiconductor. 126
Is a gap, which is the minimum width of the metal oxide semiconductor 125 (the minimum width between the metal film 124 and the metal film 124 ′), and the metal film (drain electrode) 124 and the metal film (source electrode) 124 ′. A tunnel current flows through the metal oxide semiconductor 125 between them. For example, about 0.005
Is about 0.01 μm.

By doing so, the gate electrode 1
It is possible to obtain a steep rise characteristic of the source-drain current I DS due to the voltage of 22. Therefore, the operation speed is increased, and it is possible to operate with a small current.

FIG. 8 (b) shows an example of characteristics of the thin film transistor of FIG. 8 (a). The horizontal axis is the voltage V DS between the source electrode 124 'and the drain electrode 124, and the vertical axis is the source electrode 12'.
It is a current I DS between 4 ′ and the drain electrode 124. The parameter is the gate voltage V GS (voltage between the source electrode 124 ′ and the gate electrode 124).

For example, if the gate voltage is set to V GS ′ and V DS is gradually increased, a tunnel current flows between the source electrode 124 ′ and the drain electrode 124 at the voltage of V DS ′, as shown in FIG. 8B. A steep rise characteristic can be obtained (it can also be controlled by V GS ).

FIG. 9 (a) is a diagram showing a manufacturing method of the third embodiment of the present invention shown in FIG. In FIGS. 9 (a), 9 (b) and 9 (c), 121 is a substrate.

Reference numeral 122 is a gate electrode. Reference numeral 123 is a gate insulating film. 124 and 124 'are metal films,
It will be the source electrode and the drain electrode.

Reference numeral 125 is a metal oxide semiconductor. 128
Is an insulating film for a mask and is a film of silicon nitride or the like. FIG. 9A (2) shows a state after the opening is provided in the mask insulating film 128 by etching.

Reference numeral 130 is a photoresist mask. In FIG. 9A, (1) a gate electrode is formed on the substrate 121, and the entire surface is covered with a gate insulating film 123 (thickness: about 0.02 μm).
m). A metal film 124 of copper, zinc, aluminum or the like is formed thereon by sputtering or the like (thickness: about 0.05 μm).
m). (2) A mask insulating film 128 is formed on the entire surface of the metal film 124. A photoresist is applied thereon and exposed using a mask to form a photoresist mask 130. Then, the mask insulating film is etched by the photoresist mask 130 to form a mask insulating film 128 having an opening as shown in FIG. 9 (a) (2). At this time, as shown in FIG. 8B, a wide opening is obtained in the upper part and a narrow opening is obtained in the lower part due to the etching characteristics. Therefore, by adjusting the etching time, the lower part of the opening of the mask insulating film 128 is narrower than the limit of lithography. can do.

(3) In the state of (2), the metal film 124 is oxidized by using the mask insulating film 128 as a mask, and the mask insulating film is removed. At this time, the shape of the oxidation is shown in FIG.
As shown in (c), the shape is wide at the top of the opening and narrow at the bottom. Utilizing this property, the metal oxide semiconductor 125
The minimum width of can be narrow enough to allow the tunnel current to flow.

FIG. 10 is a fourth embodiment of the present invention, which is another embodiment in which a bipolar transistor is made of a metal oxide semiconductor. The present invention controls carrier density and conductivity type by introducing impurities into a metal insulator semiconductor for the purpose of compensating for defects due to excess or deficiency of oxygen in the metal insulator semiconductor, and can be applied to a semiconductor device. Is. For example, by introducing hydrogen, lithium, sodium, potassium, copper, indium, or the like as impurities into a metal oxide semiconductor, the result of excess oxygen in a metal oxide semiconductor such as cuprous oxide can be removed. Can be controlled. By introducing elements such as fluorine, chlorine, phosphorus, arsenic, and antimony into the metal semiconductor whose carrier density and conductivity type are controlled as described above, a good pn junction is formed by controlling the conductivity type. be able to.

In FIG. 10, reference numeral 60 denotes a substrate, which is glass, quartz, silicon or the like. 60 'is a metal film (copper)
Is.

Reference numeral 61 is a metal oxide semiconductor (p-type), which is cuprous oxide and is a collector. Reference numeral 62 denotes a metal oxide semiconductor (n-type), which is cuprous oxide and is a base. 63 is a metal oxide semiconductor (p-type), which is cuprous oxide and is an emitter.

In FIG. 10, the lead lines of the electrodes are omitted. A method of manufacturing the bipolar transistor of FIG. 10 will be described. (1) Copper is deposited on a substrate (glass, silicon, etc.) 60 at room temperature by a sputtering method. The film thickness is 0.
The thickness is about 0.6 μm because the thickness of the cuprous oxide is 0.8 μm while leaving the copper of 2 μm.

(2) Thermal oxidation is performed in dry oxygen at 250 ° C. for about 6 hours to form a 0.8 μm cuprous oxide film. 250
At ° C, it has been clarified that copper oxide (CuO), which is an insulator, is not produced in place of cuprous oxide (Cu 2 O) as a result of research conducted by the present inventors. 350 °
Insulating copper oxide is generated on the surface by thermal oxidation of C or more).

(3) The characteristics of this cuprous oxide are improved by heat-treating it at 800 ° C. for 30 minutes in an atmosphere of argon (according to the study by the present inventors, it was produced by thermal oxidation at 250 ° C. It has been clarified that cuprous oxide can withstand a heat treatment at 800 ° C and further improve characteristics such as mobility (see Fig. 11)).

(4) Metals such as Li, Na, and K, and elements such as In that enter copper sites to compensate for the deficient copper component are ion-implanted, and then heat-treated in an argon atmosphere at 800 ° C. for 30 minutes to obtain n. Form type cuprous oxide. At this time, Se, S, F, Cl,
Br, I, etc. are considered. Further, P, Si, As, etc. are also conceivable.

(5) Further, ion implantation is performed for the purpose of reversing the surface portion of the n-type layer formed in (4) to p-type again. After that, heat treatment is performed at 800 ° C. for 30 minutes.・ In the above, (3), (4), and (5) are shown in FIG.
As in (b), ion implantation can be performed and heat treatment can be performed once.

A diode may be used up to the step (4). FIG. 11 is a diagram showing changes in the characteristics of cuprous oxide depending on the annealing temperature of cuprous oxide used in the present invention.

FIG. 11 is a comparison of changes in hole mobility, carrier density and resistance of cuprous oxide before and after annealing with annealing temperature of 30 minutes. The horizontal axis is the annealing temperature.

As shown in FIG. 11, it is shown that cuprous oxide changes to better characteristics depending on the annealing temperature as compared with that before annealing. In particular, since it withstands annealing even at a high temperature of about 800 ° C. and has a high mobility, it can be used as a semiconductor integrated circuit for high-temperature processing.

FIG. 12 shows a fifth embodiment of the present invention, in which a bipolar transistor is made of a metal oxide semiconductor in this way. In FIG. 12, 41
Is the substrate.

Reference numeral 42 denotes a metal oxide semiconductor (p-type), which is a collector. 43 is the insulating film 1. A metal oxide semiconductor 44 is an n-type base.

Reference numeral 45 is an electrode line 1, which is a lead line of a metal oxide semiconductor (n type) (base) 44. 46 is the insulating film 2.

Reference numeral 47 denotes a metal oxide semiconductor (p-type), which is an emitter. Reference numeral 48 denotes an electrode wiring 2 which is a lead line of the emitter 47. A method of manufacturing the bipolar transistor of the fifth embodiment shown in FIG. 12 will be described.

(1) A metal oxide semiconductor (p
A mold 42 is formed. Further, the insulating film 1 (43) is formed on the metal oxide semiconductor 42. (2) The insulating film 1 (43) is etched to provide an opening 50 for forming a base region, the surface of the metal oxide semiconductor layer 42 is doped with impurities by the above-described method, and the conductivity type is set to n type to form a pn junction. Form. Further, the base lead electrode line 45 is wired.

(3) In the state of (2), the insulating film 1 (4
3) is provided, an opening 51 for forming the emitter region is provided by etching, and a part of the conductivity type of the base region is made p-type by the above-described conductivity type control method to form a pn junction. After that, the emitter extraction electrode 47 is provided.

Thereafter, a surface protective film (not shown) or the like is formed to form a bipolar transistor. In addition, in the above, a metal oxide semiconductor such as cuprous oxide originally contains an element or a certain kind of substance, and as a result, a nuclear reaction by neutron irradiation or a nuclear reaction by hydrogen atom irradiation results in an element or a certain kind of substance. By the reaction that the substance of
You may make it a part or all of metal react and form.

[0083]

According to the present invention, a thin film transistor having high mobility can be formed in a large area by low temperature treatment. Also, the manufacturing cost can be reduced.

Further, according to the present invention, a pn junction can be favorably formed in a metal oxide semiconductor, and a metal oxide thin film semiconductor having a pn junction can be manufactured at low cost.

Further, according to the present invention, it is possible to obtain a metal oxide semiconductor having such a small width that a tunnel current can flow through a part of a metal thin film. Therefore, an ultrafine transistor operating on a completely new principle is manufactured. , It is possible to manufacture an ultra-LSI that dramatically increases the degree of integration of the ultra-LSI and dramatically increases the signal processing time.

[Brief description of drawings]

FIG. 1 is a diagram showing a basic configuration (1) of the present invention.

FIG. 2 is a diagram showing a basic configuration (2) of the present invention.

FIG. 3 is a diagram showing an example of characteristics of a metal oxide semiconductor used in the present invention.

FIG. 4 is a diagram showing a first embodiment of the present invention.

FIG. 5 is a diagram showing a manufacturing method according to the first embodiment of the present invention.

FIG. 6 is a diagram showing an example of characteristics of the first embodiment of the present invention.

FIG. 7 is a diagram showing a second embodiment of the present invention.

FIG. 8 is a diagram showing Embodiment 3 of the present invention.

FIG. 9 is a diagram showing a manufacturing method according to a third embodiment of the present invention.

FIG. 10 is a diagram showing Embodiment 4 of the present invention.

FIG. 11 is a diagram showing changes in cuprous oxide depending on the annealing temperature in the example of the present invention.

FIG. 12 is a diagram showing Embodiment 5 of the present invention.

[Explanation of symbols]

1: substrate 2: Metal electrode 3: Insulating film 4: Metal film 5: Metal oxide semiconductor 11: substrate 12: Metal film 13: Metal oxide semiconductor (first conductivity type) 14: Intrinsic semiconductor region 15: junction (pn junction) 16: Metal oxide semiconductor (second conductivity type)

Claims (8)

(57) [Claims]
1. A thin film transistor made of a metal oxide semiconductor, comprising a metal oxide semiconductor which is made into a semiconductor by oxidizing a formed metal thin film on a substrate.
2. A gate electrode provided on a substrate, a thin film of a metal oxide semiconductor provided on the gate electrode via an insulating film, and an electrode connected to the metal oxide semiconductor thin film. The thin film transistor using the metal oxide semiconductor according to claim 1.
3. The minimum width of a metal oxide semiconductor obtained by oxidizing a part of a metal film provided on the insulating film is set to a width at which a tunnel current flows. Thin film transistor using a metal oxide semiconductor.
4. The thin film transistor according to claim 1, which has a metal oxide semiconductor-metal-metal oxide semiconductor structure.
5. A metal thin film is provided on a substrate, the metal thin film is oxidized to obtain a metal oxide semiconductor having a first conductivity type, and an impurity of a second conductivity type is introduced into the metal oxide semiconductor. A metal oxide semiconductor device having a pn junction, wherein a first conductivity type junction and a second conductivity type junction are formed to form a semiconductor device.
6. The purpose of compensating for defects due to excess oxygen,
Claims characterized by introducing one or more impurities of hydrogen, lithium, sodium, potassium, copper, zinc and indium into a metal oxide semiconductor to control the carrier density and conductivity type of the metal oxide semiconductor. Items 1, 2,
A method of manufacturing a thin film transistor using the metal oxide semiconductor according to any one of claims 3 and 4 or a metal oxide semiconductor device having a pn junction according to claim 5.
7. The purpose of compensating for defects due to lack of oxygen,
Characterized by introducing one or more impurities of oxygen, hydrogen, or an element of the same group as oxygen in the periodic table into a metal oxide semiconductor to control the carrier density and conductivity type of the metal oxide semiconductor. Claims 1, 2, 3, 4
A method of manufacturing a thin film transistor using the metal oxide semiconductor according to claim 5 or a metal oxide semiconductor device having a pn junction according to claim 5.
8. The conductivity type is controlled by introducing elements such as sulfur, selenium, fluorine, chlorine, phosphorus, arsenic, and antimony into a metal oxide semiconductor whose carrier density and conductivity type are controlled. Item 6 or 7, a thin film transistor or pn made of the metal oxide semiconductor
A method for manufacturing a metal oxide semiconductor device having a junction formed therein.
JP06827095A 1995-03-27 1995-03-27 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same Expired - Lifetime JP3479375B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06827095A JP3479375B2 (en) 1995-03-27 1995-03-27 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06827095A JP3479375B2 (en) 1995-03-27 1995-03-27 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same

Publications (2)

Publication Number Publication Date
JPH08264794A JPH08264794A (en) 1996-10-11
JP3479375B2 true JP3479375B2 (en) 2003-12-15

Family

ID=13368904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06827095A Expired - Lifetime JP3479375B2 (en) 1995-03-27 1995-03-27 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same

Country Status (1)

Country Link
JP (1) JP3479375B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3252802A4 (en) * 2015-01-28 2018-08-29 Boe Technology Group Co. Ltd. Thin film transistor and manufacturing method, array substrate and manufacturing method, and display device
EP3261127A4 (en) * 2015-02-02 2018-09-05 Boe Technology Group Co. Ltd. Thin-film transistor and manufacturing method therefor, array substrate and display device

Families Citing this family (1520)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003050405A (en) * 2000-11-15 2003-02-21 Matsushita Electric Ind Co Ltd Thin film transistor array, its manufacturing method and display panel using the same array
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
WO2003098699A1 (en) * 2002-05-22 2003-11-27 Sharp Kabushiki Kaisha Semiconductor device and display comprising same
JP4108633B2 (en) * 2003-06-20 2008-06-25 シャープ株式会社 Thin film transistor, manufacturing method thereof, and electronic device
JP5118810B2 (en) * 2004-11-10 2013-01-16 キヤノン株式会社 Field effect transistor
TWI569441B (en) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7928938B2 (en) 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP4870404B2 (en) * 2005-09-02 2012-02-08 カシオ計算機株式会社 Thin film transistor manufacturing method
JP4870403B2 (en) * 2005-09-02 2012-02-08 カシオ計算機株式会社 Thin film transistor manufacturing method
JP2007073558A (en) * 2005-09-02 2007-03-22 Casio Comput Co Ltd Method of manufacturing thin-film transistor
CN101258607B (en) * 2005-09-06 2011-01-05 佳能株式会社 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous
JP4560502B2 (en) 2005-09-06 2010-10-13 キヤノン株式会社 Field effect transistor
EP1938458B1 (en) 2005-09-21 2015-06-03 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and devices having the cyclic redundancy check circuit
WO2007043493A1 (en) 2005-10-14 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5099740B2 (en) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター Thin film transistor
JP5110803B2 (en) * 2006-03-17 2012-12-26 キヤノン株式会社 Field effect transistor using oxide film for channel and method for manufacturing the same
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
US7719001B2 (en) * 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
JP5127183B2 (en) 2006-08-23 2013-01-23 キヤノン株式会社 Thin film transistor manufacturing method using amorphous oxide semiconductor film
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
WO2008136505A1 (en) * 2007-05-08 2008-11-13 Idemitsu Kosan Co., Ltd. Semiconductor device, thin film transistor and methods for manufacturing the semiconductor device and the thin film transistor
JP5542297B2 (en) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 Liquid crystal display device, display module, and electronic device
JP4989309B2 (en) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 Liquid crystal display
JP5196870B2 (en) 2007-05-23 2013-05-15 キヤノン株式会社 Electronic device using oxide semiconductor and method for manufacturing the same
JPWO2009011224A1 (en) * 2007-07-18 2010-09-16 コニカミノルタホールディングス株式会社 Method for producing metal oxide semiconductor and thin film transistor obtained thereby
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8247315B2 (en) 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
WO2010004944A1 (en) 2008-07-10 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device using the same
TWI627757B (en) 2008-07-31 2018-06-21 半導體能源研究所股份有限公司 Semiconductor devices
TWI500159B (en) 2008-07-31 2015-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9666719B2 (en) 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI469354B (en) 2008-07-31 2015-01-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI424506B (en) 2008-08-08 2014-01-21 Semiconductor Energy Lab Method for manufacturing semiconductor device
TWI500160B (en) 2008-08-08 2015-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP5480554B2 (en) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 Semiconductor device
US8021916B2 (en) 2008-09-01 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5627071B2 (en) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
EP2327069A4 (en) 2008-09-12 2013-03-20 Semiconductor Energy Lab Display device
KR101644406B1 (en) 2008-09-12 2016-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2010029859A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102160103B (en) 2008-09-19 2013-09-11 株式会社半导体能源研究所 Display device
CN102160102B (en) 2008-09-19 2013-11-06 株式会社半导体能源研究所 Display device
KR101889287B1 (en) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101827333B1 (en) 2008-09-19 2018-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5531394B2 (en) * 2008-09-30 2014-06-25 大日本印刷株式会社 Semiconductor substrate manufacturing method and semiconductor substrate obtained by the method
KR101611643B1 (en) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20200085934A (en) 2008-10-03 2020-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101714546B (en) 2008-10-03 2014-05-14 株式会社半导体能源研究所 Display device and method for producing same
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN101719493B (en) 2008-10-08 2014-05-14 株式会社半导体能源研究所 Display device
JP5361651B2 (en) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5616012B2 (en) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
KR20160072845A (en) 2008-10-24 2016-06-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101667909B1 (en) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5442234B2 (en) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 Semiconductor device and display device
KR101634411B1 (en) 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device and electronic device
TWI496295B (en) 2008-10-31 2015-08-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
KR101631454B1 (en) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit
TWI535037B (en) 2008-11-07 2016-05-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TW201921700A (en) 2008-11-07 2019-06-01 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR20130138352A (en) 2008-11-07 2013-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101432764B1 (en) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
TWI536577B (en) 2008-11-13 2016-06-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2010153802A (en) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
KR101914404B1 (en) 2008-11-21 2018-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI585955B (en) 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 Photosensor and display device
TWI606593B (en) 2008-11-28 2017-11-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI595297B (en) 2008-11-28 2017-08-11 半導體能源研究所股份有限公司 Liquid crystal display device
JP2010156960A (en) 2008-12-03 2010-07-15 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP5491833B2 (en) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 Semiconductor device
WO2010071183A1 (en) 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN103456794B (en) 2008-12-19 2016-08-10 株式会社半导体能源研究所 The manufacture method of transistor
EP2515337B1 (en) 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI596676B (en) * 2008-12-26 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8330156B2 (en) 2008-12-26 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with a plurality of oxide clusters over the gate insulating layer
KR101648927B1 (en) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
CN101840936B (en) 2009-02-13 2014-10-08 株式会社半导体能源研究所 Semiconductor device including a transistor, and manufacturing method of the semiconductor device
US8247812B2 (en) 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
JP5435206B2 (en) * 2009-02-25 2014-03-05 セイコーエプソン株式会社 Liquid ejecting head and liquid ejecting apparatus
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5504008B2 (en) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 Semiconductor device
CN102349158B (en) 2009-03-12 2015-05-06 株式会社半导体能源研究所 Method for manufacturing semiconductor device
TWI485781B (en) 2009-03-13 2015-05-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the semiconductor device
US8450144B2 (en) 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101681884B1 (en) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
KR101752640B1 (en) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI617029B (en) 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 Semiconductor device
TWI485851B (en) 2009-03-30 2015-05-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI489628B (en) 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US8338226B2 (en) 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5455753B2 (en) * 2009-04-06 2014-03-26 株式会社半導体エネルギー研究所 IC card
JP5615018B2 (en) 2009-04-10 2014-10-29 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
TWI476917B (en) 2009-04-16 2015-03-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
KR101842182B1 (en) 2009-05-01 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5751762B2 (en) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 semiconductor device
EP2256795B1 (en) 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JP5564331B2 (en) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR101805335B1 (en) 2009-06-30 2017-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic equipment
KR101944656B1 (en) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
EP3573108A1 (en) 2009-06-30 2019-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101810699B1 (en) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101610606B1 (en) 2009-07-03 2016-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101476817B1 (en) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including transistor and manufacturing method thereof
KR101642620B1 (en) 2009-07-10 2016-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method the same
WO2011004755A1 (en) 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2452362B1 (en) 2009-07-10 2017-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101851403B1 (en) 2009-07-18 2018-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101929726B1 (en) 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR101785992B1 (en) 2009-07-24 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102057299B1 (en) 2009-07-31 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102153841B1 (en) 2009-07-31 2020-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
CN102473735B (en) 2009-07-31 2015-08-12 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
TWI596741B (en) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI529914B (en) 2009-08-07 2016-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI604594B (en) 2009-08-07 2017-11-01 半導體能源研究所股份有限公司 Semiconductor device and phone, watch, and display device comprising the same
TWI634642B (en) 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
KR20190140106A (en) * 2009-09-04 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and method for manufacturing the same
JP5700626B2 (en) 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 EL display device
CN104681447A (en) 2009-09-04 2015-06-03 株式会社半导体能源研究所 Manufacturing Method Of Semiconductor Device
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101269812B1 (en) 2009-09-04 2013-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display panel, display module, electronic device and display device
KR101746198B1 (en) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101301461B1 (en) 2009-09-16 2013-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and oxide semiconductor layer
KR101709749B1 (en) 2009-09-16 2017-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of display device and display device
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
KR101927922B1 (en) 2009-09-16 2018-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and manufacturing method thereof
KR20120090972A (en) 2009-09-24 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method for manufacturing a semiconductor device
TWI512997B (en) 2009-09-24 2015-12-11 Semiconductor Energy Lab Semiconductor device, power circuit, and manufacturing method of semiconductor device
CN102576677B (en) 2009-09-24 2015-07-22 株式会社半导体能源研究所 Semiconductor element and method for manufacturing the same
CN105161543A (en) 2009-09-24 2015-12-16 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
KR102054650B1 (en) 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
WO2011036987A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
WO2011036993A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic appliance including the display device
JP5613508B2 (en) 2009-09-30 2014-10-22 株式会社半導体エネルギー研究所 Redox capacitor
KR101767035B1 (en) 2009-10-01 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101980505B1 (en) 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer, semiconductor device and manufacturing method thereof
KR101763959B1 (en) 2009-10-08 2017-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
WO2011043162A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101778513B1 (en) 2009-10-09 2017-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting display device and electronic device including the same
KR101959693B1 (en) 2009-10-09 2019-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011043218A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102000410B1 (en) 2009-10-09 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011043195A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101915251B1 (en) 2009-10-16 2018-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101745747B1 (en) 2009-10-16 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
KR101801540B1 (en) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the liquid crystal display device
EP2489032B1 (en) 2009-10-16 2017-05-31 Semiconductor Energy Laboratory Co. Ltd. Liquid crystal display device and electronic apparatus having the same
KR101801538B1 (en) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
WO2011048968A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011049230A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR101582636B1 (en) 2009-10-21 2016-01-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including display device
KR20170024130A (en) 2009-10-21 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN103794612B (en) 2009-10-21 2018-09-07 株式会社半导体能源研究所 Semiconductor device
KR101812683B1 (en) 2009-10-21 2017-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR102023128B1 (en) 2009-10-21 2019-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Analog circuit and semiconductor device
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
CN102598280B (en) 2009-10-21 2016-05-18 株式会社半导体能源研究所 Liquid crystal display device and comprise the electronic equipment of this liquid crystal display device
EP2494594B1 (en) 2009-10-29 2020-02-19 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
SG10201503877UA (en) 2009-10-29 2015-06-29 Semiconductor Energy Lab Semiconductor device
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR101740684B1 (en) 2009-10-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power diode, rectifier, and semiconductor device including the same
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101835155B1 (en) 2009-10-30 2018-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device, driving method of the same, and electronic appliance including the same
KR101752348B1 (en) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101752518B1 (en) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
SG188112A1 (en) 2009-10-30 2013-03-28 Semiconductor Energy Lab Logic circuit and semiconductor device
KR101796909B1 (en) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Non-linear element, display device, and electronic device
KR20120091243A (en) 2009-10-30 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2494601A4 (en) 2009-10-30 2016-09-07 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
WO2011052409A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101763126B1 (en) 2009-11-06 2017-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101810254B1 (en) 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and operating method thereof
KR101849321B1 (en) 2009-11-06 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101930230B1 (en) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101861980B1 (en) 2009-11-06 2018-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102598284B (en) 2009-11-06 2015-04-15 株式会社半导体能源研究所 Semiconductor device
KR101727469B1 (en) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101488521B1 (en) 2009-11-06 2015-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20170072965A (en) 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target and manufacturing method thereof, and transistor
KR20200090956A (en) 2009-11-13 2020-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101893332B1 (en) 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
KR101987790B1 (en) 2009-11-13 2019-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
WO2011058852A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102668097B (en) 2009-11-13 2015-08-12 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101945660B1 (en) 2009-11-20 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101708607B1 (en) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20200096317A (en) 2009-11-20 2020-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102598285B (en) 2009-11-20 2016-08-03 株式会社半导体能源研究所 The method being used for producing the semiconductor devices
JP5762723B2 (en) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 Modulation circuit and semiconductor device having the same
CN102668077B (en) 2009-11-20 2015-05-13 株式会社半导体能源研究所 Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR20170091760A (en) 2009-11-27 2017-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20200090939A (en) 2009-11-27 2020-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN105206514B (en) 2009-11-28 2018-04-10 株式会社半导体能源研究所 Oxide material, semiconductor devices and the method for manufacturing the semiconductor devices of stacking
KR101803553B1 (en) 2009-11-28 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101329849B1 (en) 2009-11-28 2013-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101800038B1 (en) * 2009-12-04 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
CN102648525B (en) 2009-12-04 2016-05-04 株式会社半导体能源研究所 Display unit
KR101797253B1 (en) 2009-12-04 2017-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20190130672A (en) 2009-12-04 2019-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2011139052A (en) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd Semiconductor memory device
WO2011068028A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
WO2011068022A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR101943109B1 (en) 2009-12-04 2019-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR102153034B1 (en) 2009-12-04 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101835300B1 (en) 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011070892A1 (en) 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP5727204B2 (en) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101894821B1 (en) 2009-12-11 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101804589B1 (en) 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
EP2510541A4 (en) 2009-12-11 2016-04-13 Semiconductor Energy Lab Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101768433B1 (en) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
CN103219390B (en) 2009-12-18 2014-11-12 株式会社半导体能源研究所 Liquid crystal display device and electronic device
KR101763660B1 (en) 2009-12-18 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and driving method thereof
CN105957481B (en) 2009-12-18 2019-12-31 株式会社半导体能源研究所 Display device
KR102020739B1 (en) 2009-12-18 2019-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including optical sensor and driving method thereof
CN104700890B (en) 2009-12-18 2017-10-17 株式会社半导体能源研究所 Non-volatile latch circuit and logic circuit and use their semiconductor devices
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011077908A1 (en) 2009-12-23 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077916A1 (en) * 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011077926A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR101811203B1 (en) 2009-12-25 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
MY158782A (en) 2009-12-25 2016-11-15 Semiconductor Energy Lab Memory Device, Semiconductor Device, And Electronic Device
EP2517245B1 (en) 2009-12-25 2019-07-24 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
WO2011077925A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR101870119B1 (en) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011080999A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011081009A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101762316B1 (en) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
CN105353551A (en) 2009-12-28 2016-02-24 株式会社半导体能源研究所 Liquid crystal display device and electronic device
KR102006729B1 (en) 2009-12-28 2019-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device and semiconductor device
CN102725841B (en) 2010-01-15 2016-10-05 株式会社半导体能源研究所 Semiconductor devices
WO2011086848A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
CN102696064B (en) 2010-01-15 2015-11-25 株式会社半导体能源研究所 Semiconductor device and electronic installation
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101916012B1 (en) 2010-01-20 2018-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electronic device
KR101816505B1 (en) 2010-01-20 2018-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display method of display device
KR101842860B1 (en) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving display device
KR20190091383A (en) 2010-01-20 2019-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
SG10201500353WA (en) 2010-01-20 2015-03-30 Semiconductor Energy Lab Semiconductor device
CN102804603B (en) 2010-01-20 2015-07-15 株式会社半导体能源研究所 Signal processing circuit and method for driving the same
KR101747421B1 (en) 2010-01-20 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of liquid crystal display device
CN102713999B (en) 2010-01-20 2016-01-20 株式会社半导体能源研究所 Electronic equipment and electronic system
KR101993584B1 (en) 2010-01-22 2019-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101855060B1 (en) 2010-01-22 2018-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device and driving method thereof
KR101829309B1 (en) 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011089844A1 (en) 2010-01-24 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101815838B1 (en) 2010-01-24 2018-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20120112803A (en) 2010-01-29 2012-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device including the same
KR20120120330A (en) 2010-01-29 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN105590964B (en) 2010-02-05 2019-01-04 株式会社半导体能源研究所 Semiconductor device
CN105405747B (en) 2010-02-05 2020-03-13 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
KR101822962B1 (en) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101819197B1 (en) 2010-02-05 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101926336B1 (en) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102754209B (en) 2010-02-12 2015-11-25 株式会社半导体能源研究所 Semiconductor device and driving method thereof
CN102741915B (en) 2010-02-12 2015-12-16 株式会社半导体能源研究所 Display device and driving method
WO2011099343A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011102227A1 (en) 2010-02-18 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2011102190A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
WO2011102248A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011102203A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device using the same
KR102049472B1 (en) 2010-02-19 2019-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011102501A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving display device
WO2011105184A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011105268A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102078253B1 (en) 2010-02-26 2020-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
KR101828960B1 (en) 2010-03-02 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Pulse signal output circuit and shift register
WO2011108367A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and rfid tag including boosting circuit
KR101798645B1 (en) 2010-03-02 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Pulse signal output circuit and shift register
WO2011108381A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011108374A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
DE112011100842T5 (en) 2010-03-08 2013-01-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor component and method for its production
WO2011111490A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011111505A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101791253B1 (en) 2010-03-08 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electronic device and electronic system
CN102782822B (en) 2010-03-08 2016-06-01 株式会社半导体能源研究所 The manufacture method of semiconductor device and semiconductor device
WO2011111506A1 (en) 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving circuit and method for driving display device
US8900362B2 (en) 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
KR101769970B1 (en) 2010-03-12 2017-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011111521A1 (en) 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device
WO2011111507A1 (en) 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102812547B (en) 2010-03-19 2015-09-09 株式会社半导体能源研究所 Semiconductor device
KR101840797B1 (en) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101435970B1 (en) 2010-03-26 2014-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101862539B1 (en) 2010-03-26 2018-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20130069583A (en) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field-sequential display device
KR101761966B1 (en) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power supply device and driving method thereof
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR102141064B1 (en) 2010-04-02 2020-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN110620156A (en) 2010-04-02 2019-12-27 株式会社半导体能源研究所 Semiconductor device with a plurality of semiconductor chips
KR101810592B1 (en) 2010-04-07 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101994909B1 (en) 2010-04-09 2019-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101748901B1 (en) 2010-04-09 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
WO2011129456A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
KR20130061678A (en) 2010-04-16 2013-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power source circuit
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102870219B (en) 2010-04-23 2016-04-27 株式会社半导体能源研究所 The manufacture method of semiconductor device
CN102870151B (en) 2010-04-23 2016-03-30 株式会社半导体能源研究所 Display device and its driving method
WO2011132556A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101754380B1 (en) 2010-04-23 2017-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR101877377B1 (en) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
KR20180082636A (en) 2010-04-28 2018-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
TWI511236B (en) * 2010-05-14 2015-12-01 Semiconductor Energy Lab Semiconductor device
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102893403B (en) 2010-05-21 2016-08-03 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
KR101808198B1 (en) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5766012B2 (en) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 Liquid crystal display
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5714973B2 (en) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 Semiconductor device
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145467A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5852793B2 (en) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
JP5749975B2 (en) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 Photodetector and touch panel
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101894897B1 (en) 2010-06-04 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
KR101938726B1 (en) 2010-06-11 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5797471B2 (en) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 I / O device
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5823740B2 (en) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 I / O device
WO2011158703A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120000499A (en) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and semiconductor device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9437454B2 (en) 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
JP5771079B2 (en) 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 imaging device
WO2012002040A1 (en) 2010-07-01 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
TWI541782B (en) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 Liquid crystal display device
KR20200023539A (en) 2010-07-02 2020-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20130090405A (en) 2010-07-02 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101995851B1 (en) 2010-07-02 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012008304A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
WO2012014952A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
TWI545587B (en) 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5832181B2 (en) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 Liquid crystal display
DE112011102644B4 (en) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrated semiconductor circuit
TWI605549B (en) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device
KR102006586B1 (en) 2010-08-06 2019-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8748224B2 (en) 2010-08-16 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
JP5848912B2 (en) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 Control circuit for liquid crystal display device, liquid crystal display device, and electronic apparatus including the liquid crystal display device
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013009285A (en) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd Signal processing circuit and method of driving the same
JP5763474B2 (en) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 Optical sensor
JP5674594B2 (en) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 Semiconductor device and driving method of semiconductor device
WO2012026503A1 (en) 2010-08-27 2012-03-01 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
KR20180105252A (en) 2010-09-03 2018-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and method for manufacturing semiconductor device
WO2012029612A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101824125B1 (en) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI543166B (en) 2010-09-13 2016-07-21 半導體能源研究所股份有限公司 Semiconductor device
JP2012256821A (en) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd Memory device
KR101952235B1 (en) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
JP5815337B2 (en) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 semiconductor device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101932576B1 (en) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
TWI670711B (en) 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 Memory device and semiconductor device
JP2012256012A (en) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd Display device
KR101426515B1 (en) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101856722B1 (en) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power-insulated-gate field-effect transistor
TWI574259B (en) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 Semiconductor memory device and method for driving the same
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
KR101924231B1 (en) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
WO2012057296A1 (en) 2010-10-29 2012-05-03 Semiconductor Energy Laboratory Co., Ltd. Storage device
KR101924656B1 (en) 2010-11-02 2018-12-03 우베 고산 가부시키가이샤 (amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012060253A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
JP6010291B2 (en) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 Driving method of display device
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
TWI555205B (en) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI535014B (en) 2010-11-11 2016-05-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI541981B (en) 2010-11-12 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI525818B (en) 2010-11-30 2016-03-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI632551B (en) 2010-12-03 2018-08-11 半導體能源研究所股份有限公司 Integrated circuit, method for driving the same, and semiconductor device
KR101457833B1 (en) 2010-12-03 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5908263B2 (en) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 DC-DC converter
JP5856827B2 (en) 2010-12-09 2016-02-10 株式会社半導体エネルギー研究所 Semiconductor device
JP2012256020A (en) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method for the same
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
JP2012142562A (en) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd Semiconductor memory device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
KR101981808B1 (en) 2010-12-28 2019-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP5973165B2 (en) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
WO2012090973A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5784479B2 (en) 2010-12-28 2015-09-24 株式会社半導体エネルギー研究所 semiconductor device
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6030298B2 (en) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 Buffer storage device and signal processing circuit
JP2012151453A (en) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method of the same
JP5975635B2 (en) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
JP5864054B2 (en) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 Semiconductor device
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI562142B (en) 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
JP5982125B2 (en) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI570809B (en) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI535032B (en) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
JP5977523B2 (en) 2011-01-12 2016-08-24 株式会社半導体エネルギー研究所 Method for manufacturing transistor
KR102026718B1 (en) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and detecting method
TWI619230B (en) 2011-01-14 2018-03-21 半導體能源研究所股份有限公司 Semiconductor memory device
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
TWI614747B (en) 2011-01-26 2018-02-11 半導體能源研究所股份有限公司 Memory device and semiconductor device
TWI570920B (en) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI602303B (en) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI657580B (en) 2011-01-26 2019-04-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
CN103348464B (en) 2011-01-26 2016-01-13 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
KR20190007525A (en) 2011-01-27 2019-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI525619B (en) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 Memory circuit
WO2012102314A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
TWI569041B (en) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 Display device
KR101899880B1 (en) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable lsi
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898527B2 (en) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 Semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5827145B2 (en) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 Signal processing circuit
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
TWI658516B (en) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
JP2012209543A (en) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JP5933897B2 (en) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device
KR101900525B1 (en) 2011-03-18 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
TWI545652B (en) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI582999B (en) 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 Field-effect transistor, and memory and semiconductor circuit including the same
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
JP6053098B2 (en) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 Semiconductor device
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI567735B (en) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 Memory circuit, memory unit, and signal processing circuit
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5982147B2 (en) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 Light emitting device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
JP5890234B2 (en) 2011-04-15 2016-03-22 株式会社半導体エネルギー研究所 Semiconductor device and driving method thereof
JP6001900B2 (en) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 Signal processing circuit
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102760697B (en) 2011-04-27 2016-08-03 株式会社半导体能源研究所 The manufacture method of semiconductor device
KR101919056B1 (en) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor circuit
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI525615B (en) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 Semiconductor storage device
KR101963457B1 (en) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI550865B (en) 2011-05-05 2016-09-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI568181B (en) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 Logic circuit and semiconductor device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (en) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
TWI557711B (en) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 Method for driving display device
JP5886128B2 (en) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US9954110B2 (en) 2011-05-13 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6110075B2 (en) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Display device
JP6013773B2 (en) 2011-05-13 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
KR101952570B1 (en) 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing the same
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101946360B1 (en) 2011-05-16 2019-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device
TWI570891B (en) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR102093909B1 (en) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Circuit and method of driving the same
KR102081792B1 (en) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Arithmetic circuit and method of driving the same
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6006975B2 (en) * 2011-05-19 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101991735B1 (en) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor integrated circuit
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
JP6014362B2 (en) 2011-05-19 2016-10-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI501226B (en) 2011-05-20 2015-09-21 Semiconductor Energy Lab Memory device and method for driving memory device
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
JP5936908B2 (en) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 Parity bit output circuit and parity check circuit
JP5886496B2 (en) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
JP6082189B2 (en) 2011-05-20 2017-02-15 株式会社半導体エネルギー研究所 Storage device and signal processing circuit
WO2012160963A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5951351B2 (en) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 Adder and full adder
TWI559683B (en) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 Semiconductor integrated circuit
JP6013680B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6091083B2 (en) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 Storage device
TWI570719B (en) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 Memory device and signal processing circuit
JP5947099B2 (en) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 Semiconductor device
TWI614995B (en) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 Phase locked loop and semiconductor device using the same
JP6030334B2 (en) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 Storage device
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5912844B2 (en) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 Programmable logic device
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
JP5890251B2 (en) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 Communication method
CN103124805B (en) 2011-06-08 2017-02-15 株式会社半导体能源研究所 Sputtering target, method for manufacturing sputtering target, and method for forming thin film
JP2013016243A (en) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd Memory device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6104522B2 (en) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 Semiconductor device
JP6009226B2 (en) 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6005401B2 (en) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20190039345A (en) 2011-06-17 2019-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9318506B2 (en) 2011-07-08 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP2013042117A (en) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013015091A1 (en) 2011-07-22 2013-01-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP6013685B2 (en) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006572B2 (en) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device
JP6128775B2 (en) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
TWI575494B (en) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 Method for driving semiconductor device
JP6116149B2 (en) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 Semiconductor device
TWI668839B (en) 2011-08-29 2019-08-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6016532B2 (en) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6050054B2 (en) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (en) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 Power insulated gate field effect transistor
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5832399B2 (en) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 Light emitting device
CN103022012B (en) 2011-09-21 2017-03-01 株式会社半导体能源研究所 Semiconductor storage
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
KR102108572B1 (en) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2013084333A (en) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd Shift register circuit
KR101506303B1 (en) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN105514174B (en) 2011-09-29 2019-03-08 株式会社半导体能源研究所 Semiconductor devices
SG11201505088UA (en) 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
JP5806905B2 (en) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013093565A (en) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6022880B2 (en) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP2013093561A (en) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
JP6026839B2 (en) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP5912394B2 (en) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 Semiconductor device
KR20130040706A (en) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
CN104025301B (en) 2011-10-14 2017-01-18 株式会社半导体能源研究所 Semiconductor device
KR20130043063A (en) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI567985B (en) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP6226518B2 (en) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6045285B2 (en) 2011-10-24 2016-12-14 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101976212B1 (en) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6082562B2 (en) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20140086954A (en) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP5933895B2 (en) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP6076038B2 (en) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 Method for manufacturing display device
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6122275B2 (en) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 Display device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
KR101984739B1 (en) 2011-11-11 2019-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Signal line driver circuit and liquid crystal display device
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US10026847B2 (en) 2011-11-18 2018-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
JP6099368B2 (en) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 Storage device
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI639150B (en) 2011-11-30 2018-10-21 日商半導體能源研究所股份有限公司 Semiconductor display device
KR102072244B1 (en) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
JP6147992B2 (en) 2011-11-30 2017-06-14 株式会社半導体エネルギー研究所 Semiconductor device
TWI588910B (en) 2011-11-30 2017-06-21 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621183B (en) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP2013137853A (en) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd Storage device and driving method thereof
WO2013080900A1 (en) 2011-12-02 2013-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6050662B2 (en) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
JP6081171B2 (en) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 Storage device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2013089115A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6105266B2 (en) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 Storage device
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013149953A (en) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6012450B2 (en) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP6033071B2 (en) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 Semiconductor device
TWI569446B (en) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
TWI580189B (en) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 Level-shift circuit and semiconductor integrated circuit
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6053490B2 (en) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (en) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR102103913B1 (en) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
JP2013168926A (en) 2012-01-18 2013-08-29 Semiconductor Energy Lab Co Ltd Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6027898B2 (en) 2012-01-23 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
KR102083380B1 (en) 2012-01-25 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
TWI642193B (en) 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP6091905B2 (en) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
KR102101167B1 (en) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5981157B2 (en) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 Semiconductor device
JP6125850B2 (en) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP2014063557A (en) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd Storage element and semiconductor element
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6151530B2 (en) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 Image sensor, camera, and surveillance system
JP6220526B2 (en) 2012-02-29 2017-10-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2013183001A (en) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6046514B2 (en) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
JP6100559B2 (en) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 Semiconductor memory device
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104160295B (en) 2012-03-09 2017-09-15 株式会社半导体能源研究所 The driving method of semiconductor device
KR102108248B1 (en) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, transistor, and semiconductor device
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
JP6168795B2 (en) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6169376B2 (en) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 Battery Management Unit, Protection Circuit, Power Storage Device
WO2013146154A1 (en) 2012-03-29 2013-10-03 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
JP2013229013A (en) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd Array controller and storage system
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP6139187B2 (en) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 Semiconductor device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
JP5975907B2 (en) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
JP2013236068A (en) 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method therefor
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
KR20150005949A (en) 2012-04-13 2015-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6059566B2 (en) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6128906B2 (en) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6143423B2 (en) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP6001308B2 (en) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 Semiconductor device
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
JP6199583B2 (en) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 Semiconductor device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
JP6228381B2 (en) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6035195B2 (en) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6227890B2 (en) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 Signal processing circuit and control circuit
KR102025722B1 (en) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Temperature sensor circuit and semiconductor device including temperature sensor circuit
KR101978932B1 (en) 2012-05-02 2019-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device
JP2013250965A (en) 2012-05-02 2013-12-12 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method thereof
JP6243136B2 (en) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 Switching converter
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130125717A (en) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
CN104285302B (en) 2012-05-10 2017-08-22 株式会社半导体能源研究所 Semiconductor device
KR102069158B1 (en) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
WO2013168624A1 (en) 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102013022449B3 (en) 2012-05-11 2019-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102087443B1 (en) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP2014003594A (en) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device and method of driving the same
JP6250955B2 (en) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 Driving method of semiconductor device
KR102059218B1 (en) 2012-05-25 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device and semiconductor device
US9502094B2 (en) 2012-05-25 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Method for driving memory element
JP6050721B2 (en) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (en) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 Programmable logic device
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6158588B2 (en) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 Light emitting device
KR20190016611A (en) 2012-05-31 2019-02-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
WO2013180016A1 (en) 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and alarm device
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN110581070A (en) 2012-06-29 2019-12-17 株式会社半导体能源研究所 Semiconductor device with a plurality of semiconductor chips
KR20140002496A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
TWI596778B (en) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
KR102082794B1 (en) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of driving display device, and display device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6310194B2 (en) 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 Semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102099262B1 (en) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
JP2014032399A (en) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP6006558B2 (en) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP6185311B2 (en) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 Power supply control circuit and signal processing circuit
WO2014013958A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Display device
DE112013003609B4 (en) 2012-07-20 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device that includes the display device
KR102141977B1 (en) 2012-07-20 2020-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR20140013931A (en) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
JP2014042004A (en) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
JP6224931B2 (en) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP2014045175A (en) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6134598B2 (en) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 Semiconductor device
DE112013007566B3 (en) 2012-08-03 2018-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2014057298A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
KR20140020749A (en) 2012-08-10 2014-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP6220597B2 (en) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN108305895A (en) 2012-08-10 2018-07-20 株式会社半导体能源研究所 Semiconductor device and its manufacturing method
JP2014199899A (en) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 Semiconductor device
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI581404B (en) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014057296A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
KR101466013B1 (en) * 2012-08-13 2014-11-27 한국표준과학연구원 Amorphous oxide semiconductor layer and thin film transistor having the same
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (en) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Radiation detection panel, radiation imaging device, and diagnostic imaging device
DE102013216824A1 (en) 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140029181A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
KR20140029202A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
TWI657539B (en) 2012-08-31 2019-04-21 日商半導體能源研究所股份有限公司 Semiconductor device
SG11201504939RA (en) 2012-09-03 2015-07-30 Semiconductor Energy Lab Microcontroller
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE102013217278B4 (en) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. A photodetector circuit, an imaging device, and a method of driving a photodetector circuit
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
CN104620390A (en) 2012-09-13 2015-05-13 株式会社半导体能源研究所 Semiconductor device
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR20140035822A (en) 2012-09-14 2014-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for fabricating the same
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI627750B (en) 2012-09-24 2018-06-21 半導體能源研究所股份有限公司 Semiconductor device
JP6351947B2 (en) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
KR20140047529A (en) 2012-10-12 2014-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
TWI681233B (en) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 Liquid crystal display device, touch panel and method for manufacturing liquid crystal display device
JP6290576B2 (en) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 Liquid crystal display device and driving method thereof
TWI591966B (en) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 Programmable logic device and method for driving programmable logic device
WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR20150070167A (en) 2012-10-17 2015-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Microcontroller and method for manufacturing the same
JP5951442B2 (en) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 Semiconductor device
JP6021586B2 (en) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20150067379A (en) 2012-10-17 2015-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6059501B2 (en) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6283191B2 (en) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
JP2014082388A (en) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd Semiconductor device
KR20140050542A (en) 2012-10-19 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
JP6204145B2 (en) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 Semiconductor device
WO2014065301A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI691084B (en) 2012-10-24 2020-04-11 日商半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP6300489B2 (en) 2012-10-24 2018-03-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20140052870A (en) 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (en) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 Display device and electronic device
TWI618075B (en) 2012-11-06 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device and driving method thereof
KR20200011610A (en) 2012-11-08 2020-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Metal oxide film and method for forming metal oxide film
TWI605593B (en) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device
TWI608616B (en) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 Semiconductor device
JP6220641B2 (en) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
TWI613813B (en) 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 Semiconductor device
JP6285150B2 (en) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 Semiconductor device
JP6317059B2 (en) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device and display device
TWI620323B (en) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
TWI627483B (en) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 Display device and television receiver
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI613759B (en) 2012-11-28 2018-02-01 半導體能源研究所股份有限公司 Display device
JP2014130336A (en) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd Display device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
TWI582993B (en) 2012-11-30 2017-05-11 半導體能源研究所股份有限公司 Semiconductor device
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150092191A (en) 2012-11-30 2015-08-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2014135478A (en) 2012-12-03 2014-07-24 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
JP6320009B2 (en) 2012-12-03 2018-05-09 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
KR20140071234A (en) 2012-12-03 2014-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102112364B1 (en) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (en) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 Programmable logic device and semiconductor device
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
KR20140082934A (en) 2012-12-25 2014-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Resistor, display device, and electronic device
DE112013006219T5 (en) 2012-12-25 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
DE112013006214T5 (en) 2012-12-25 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014142986A (en) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device
TWI607510B (en) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method of the same
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014104265A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2014104267A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (en) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
JP6329762B2 (en) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (en) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
JP6223198B2 (en) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP5807076B2 (en) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
TWI619010B (en) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 Semiconductor device
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI618252B (en) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device
KR102112367B1 (en) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2014125979A1 (en) 2013-02-13 2014-08-21 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (en) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 Display device and electronic device
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
TWI651839B (en) * 2013-02-27 2019-02-21 半導體能源研究所股份有限公司 The semiconductor device driving circuit and a display device
TWI612321B (en) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 Imaging device
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6141777B2 (en) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2014195241A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2014195243A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
KR20140108120A (en) 2013-02-28 2014-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9276125B2 (en) 2013-03-01 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014195060A (en) 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd Sensor circuit and semiconductor device using sensor circuit
KR102153110B1 (en) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor film and semiconductor device
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (en) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 Semiconductor device
JP6298662B2 (en) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2014142332A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
JP2014199709A (en) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 Memory device and semiconductor device
JP6283237B2 (en) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
KR20140113354A (en) 2013-03-14 2014-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2014142043A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI677193B (en) 2013-03-15 2019-11-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
JP6355374B2 (en) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6093726B2 (en) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6272713B2 (en) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 Programmable logic device and semiconductor device
JP6316630B2 (en) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6376788B2 (en) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP6395409B2 (en) 2013-03-27 2018-09-26 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP2014209209A (en) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 Display device
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (en) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6224338B2 (en) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device, display device, and method for manufacturing semiconductor device
JP6198434B2 (en) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 Display device and electronic device
JP6280794B2 (en) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 Semiconductor device and driving method thereof
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI620324B (en) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
JP6456598B2 (en) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 Display device
JP6333028B2 (en) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 Memory device and semiconductor device
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2014175296A1 (en) 2013-04-24 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6396671B2 (en) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6401483B2 (en) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI644434B (en) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI631711B (en) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 Semiconductor device
KR20140131264A (en)