US10147823B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
US10147823B2
US10147823B2 US15/070,713 US201615070713A US10147823B2 US 10147823 B2 US10147823 B2 US 10147823B2 US 201615070713 A US201615070713 A US 201615070713A US 10147823 B2 US10147823 B2 US 10147823B2
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United States
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insulator
conductor
transistor
semiconductor
region
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US15/070,713
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US20160276488A1 (en
Inventor
Shunpei Yamazaki
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015-056580 priority Critical
Priority to JP2015-056585 priority
Priority to JP2015056580 priority
Priority to JP2015056585 priority
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD. reassignment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAZAKI, SHUNPEI
Publication of US20160276488A1 publication Critical patent/US20160276488A1/en
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Publication of US10147823B2 publication Critical patent/US10147823B2/en
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