JP2004103957A - Transparent thin film field effect type transistor using homologous thin film as active layer - Google Patents

Transparent thin film field effect type transistor using homologous thin film as active layer Download PDF

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JP2004103957A
JP2004103957A JP2002266012A JP2002266012A JP2004103957A JP 2004103957 A JP2004103957 A JP 2004103957A JP 2002266012 A JP2002266012 A JP 2002266012A JP 2002266012 A JP2002266012 A JP 2002266012A JP 2004103957 A JP2004103957 A JP 2004103957A
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thin film
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zno
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JP4164562B2 (en )
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Masahiro Hirano
Hideo Hosono
Toshio Kamiya
Hiromichi Ota
太田 裕道
平野 正浩
神谷 利夫
細野 秀雄
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Japan Science & Technology Corp
Hiromichi Ota
太田 裕道
科学技術振興事業団
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that in ZnO as a transparent oxide semiconductor, it is difficult to reduce an electric conductivity and it is impossible to constitute a normally off field effect type transistor, or as it is difficult to form an amorphous state, an amorphous transistor adaptive for a large area cannot be manufactured. <P>SOLUTION: In a homologous compound InMO<SB>3</SB>(ZnO)<SB>m</SB>(M=In, Fe, Ga or Al; m=an integer of 1 to 49) single crystal thin film manufactured by a reactive solid-phase epitaxial method, a deviation from a stoichiometry is very small and a good insulator is obtained near room temperatures. By using the homologous compound single crystal InMO<SB>3</SB>(ZnO)<SB>m</SB>(M=In, Fe, Ga or Al; m=an integer of 1 to 49) thin film as an active layer, a transparent thin film field effect type transistor having a good switching characteristic can be manufactured by a normally off operation. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】 [0001]
【発明の属する技術分野】 BACKGROUND OF THE INVENTION
本発明は、可視光に対して透明で、透明電子回路を構成する素子として用いることができる、ZnOを主たる構成成分として含有するホモロガス化合物の単結晶膜又はアモルファス膜を活性層として用いる透明電界効果型トランジスタに関する。 The present invention is transparent to visible light, it can be used as an element constituting the transparent electronics, transparent field effect using a single crystal film or an amorphous film of homologous compound containing ZnO as a main component as an active layer about a type transistor.
【0002】 [0002]
【従来の技術及びその課題】 BACKGROUND OF THE INVENTION
電界効果型トランジスタは、半導体メモリ集積回路の単位電子素子、高周波信号増幅素子、液晶駆動用素子等として用いられており、現在、最も多く実用化されている電子デバイスである。 Field effect transistor, the unit electronic device of a semiconductor memory integrated circuit, is used as a liquid crystal driving element or the like, currently the most practically used in which the electronic device. 材料としては、シリコン半導体化合物が最も広く使われている。 The material, a silicon semiconductor compound is most widely used. 高速動作が必要な高周波増幅素子、集積回路用素子等には、シリコン単結晶が用いられ、また、低速動作で充分な液晶駆動用には、大面積化の要求から、アモルファスシリコンが使われている。 High-speed operation required high-frequency amplifying device, the integrated circuit element or the like, a silicon single crystal is used, also the use sufficient liquid crystal driving at a low speed operation, the demand for a larger area, and amorphous silicon is used there.
【0003】 [0003]
シリコンを用いた電界効果型トランジスタは、多くの用途に対して、充分な性能を有している。 Field-effect transistor using silicon, for many applications, has a sufficient performance. しかし、該トランジスタは、シリコンの光学的特性に基づいて、可視光に対して不透明で、透明回路を構成することができない。 However, the transistor is based on the optical properties of silicon, is opaque to visible light, it is impossible to constitute a transparent circuit. また、可視光照射により、伝導キャリアを生じるために、高光照射下ではトランジスタ特性が劣化してしまう。 Further, the visible light irradiation, to produce a conductive carrier, under high illumination transistor characteristics are deteriorated. 例えば、該トランジスタを液晶ディスプレイの液晶駆動用スイッチング素子として応用した場合、該デバイスは、可視光に対して不透明なため、ディスプレイ画素の開口比が小さくなる。 For example, when applied to the transistor as a liquid crystal driving switching element of a liquid crystal display, the device for opaque to visible light, the aperture ratio of the display pixel is decreased. また、バックライト照射により光誘起電流が発生し、スイッチング特性が劣化してしまう。 Further, the light-induced current is generated by a backlight irradiation, the switching characteristics are deteriorated. こうした劣化を防ぐため、バックライト光をカットするための遮光膜を設ける必要がある。 To prevent such deterioration, it is necessary to provide a light shielding film for cutting off the backlight light.
【0004】 [0004]
シリコン電界効果型トランジスタのこうした問題点は、シリコンに替わって、エネルギーバンド幅の大きな半導体材料を用いることにより、原理的に、解決することができる。 These problems of the silicon field effect transistors, in place of the silicon, by using a large semiconductor material of an energy band width, it is possible in principle, solve. 実際に、透明酸化物半導体であるZnOを用いて、電界効果型トランジスタを作製する試みがなされている(例えば、非特許文献1)。 Indeed, by using a ZnO transparent oxide semiconductor, an attempt to produce a field effect transistor have been made (for example, Non-Patent Document 1). しかし、ZnOは、電気伝導度を小さくすることが難しく、ノーマリーオフの電界効果型トランジスタを構成できない等の欠点がある。 However, ZnO, it is difficult to reduce the electric conductivity, there is a drawback such that can not configure the field effect transistors of normally off. また、アモルファス状態を作り難いので、大面積に適したアモルファストランジスタを作製することができない。 Moreover, since hardly make amorphous state, it is impossible to produce an amorphous transistor suitable for large area.
【0005】 [0005]
【非特許文献1】 Non-Patent Document 1]
七種ら、応用物理学会2000年春季学術講演会予稿集,2000.3,29p−YL−16 Seven species, et al., Applied Physics Society, 2000 Spring Academic Lecture Proceedings, 2000.3,29p-YL-16
【0006】 [0006]
【課題を解決するための手段】 In order to solve the problems]
本発明者らは、先に、パルスレーザー薄膜堆積法を用い、室温での成膜により、アモルファス状態で、n−型電気伝導を示す、ZnOを主たる構成成分として含有するInGaO (ZnO) (mは自然数) 等のホモロガス化合物透明薄膜を育成した(特開2000−44236号公報、細野他 Philosophical Magazine B.81.501−515(2001))。 The present inventors have previously using a pulsed laser thin-film deposition, the film formation at room temperature, in an amorphous state, indicates the n- type electric conductivity, InGaO 3 containing ZnO as a main component (ZnO) m (m is a natural number) were grown homologous compound transparent thin film such as (JP 2000-44236 and JP Hosono other Philosophical Magazine B.81.501-515 (2001)).
【0007】 [0007]
さらに、本発明者らは、YSZ(イットリア安定化ジルコニア)基板上に育成したZnO単結晶極薄膜上に、アモルファスのホモロガス薄膜を堆積し、得られた多層膜を高温で加熱拡散処理する「反応性固相エピタキシャル法」により、ホモロガス単結晶薄膜を育成する方法を開発し、「自然超格子ホモロガス単結晶薄膜とその製造方法」と名付け、特許出願した(特願2001−340066)。 Furthermore, the present inventors have, YSZ (the yttria-stabilized zirconia) ZnO was grown on the substrate single crystal electrode thin film, depositing a homologous amorphous thin film, heat diffusion treatment and the resulting multi-layer film at a high temperature "reaction the sexual phase epitaxial method ", developed a method of growing a homologous single-crystal thin film, called" natural superlattice homologous single-crystal thin film and a manufacturing method thereof ", filed a patent application (Japanese Patent application No. 2001-340066).
【0008】 [0008]
本発明者は、上記のホモロガス単結晶薄膜の製造方法と同様に、ZnO薄膜上にエピタキシャル成長した複合酸化物薄膜を加熱拡散する手段を用いることにより従来のシリコンを用いた電界効果型トランジスタに代わる新たな優れた電界効果型トランジスタを提供できることを見出した。 The present inventors, as well as the manufacturing method of the homologous single-crystal thin film, a new alternative to the field effect transistor using a conventional silicon by using a means for heating diffuse composite oxide thin film was epitaxially grown on the ZnO thin film It found to be able to offer a Do excellent field-effect transistor.
【0009】 [0009]
本発明は、反応性固相エピタキシャル法により育成した、ZnOを主たる構成成分として含有するホモロガス化合物単結晶薄膜又はZnOを主たる構成成分として含有するホモロガスアモルファス薄膜を活性層とした電界効果型トランジスタを提供する。 The present invention was grown by reactive solid phase epitaxial method, provides a field-effect transistor of the e Moro gas amorphous thin film containing the active layer of the homologous compound single crystal thin film or ZnO containing ZnO as a main component as a main component to.
【0010】 [0010]
すなわち、本発明は、(1)ホモロガス化合物InMO (ZnO) (M=In, Fe, Ga ,又はAl, m=1以上50未満の整数)薄膜を活性層として用いることを特徴とする透明薄膜電界効果型トランジスタである。 The present invention provides: (1) homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 to 50 below integer) transparent which comprises using a thin film as an active layer it is a thin film field effect transistor. また、(2)表面が原子レベルで平坦である単結晶又はアモルファスホモロガス化合物薄膜を用いることを特徴とする上記(1)の透明薄膜電界効果型トランジスタである。 It is also (2) a transparent thin film field effect transistor of the surface is characterized by using a single crystal or amorphous e Moro gas compound thin film is flat at the atomic level above (1). また、(3)ホモロガス化合物が耐熱性、透明酸化物単結晶基板上に形成された単結晶薄膜であることを特徴とする上記(1)の透明薄膜電界効果型トランジスタである。 Further, a (3) homologous compound is heat-resistant, transparent oxide transparent thin film field effect transistor of the (1), which is a single crystal thin film formed on a single crystal substrate. また、(4)ホモロガス化合物がガラス基板上に形成されたアモルファス薄膜であることを特徴とする上記(1)の透明薄膜電界効果型トランジスタである。 Further, a (4) a transparent thin film field effect transistor of the (1), wherein the homologous compound is an amorphous thin film formed on a glass substrate.
【0011】 [0011]
1. 1. 反応性固相エピタキシャル法により製造したホモロガス化合物単結晶InMO (ZnO) (M=In, Fe, Ga, Al, m=1以上50未満の整数)薄膜は、InO 1.5層が原子レベルで平坦な薄膜表面を形成することから、ゲートと活性層の界面に欠陥が介在しにくく、ゲートリーク電流の少ない薄膜電界効果型トランジスタを作製できる。 Homologous compound was prepared by reactive solid phase epitaxial method single crystal InMO 3 (ZnO) m (M = In, Fe, Ga, Al, m = 1 or more 50 than an integer) films, InO 1.5 layers atomic level in the fact that to form a flat thin film surface, defects at the interface is unlikely to intervention of the gate and the active layer can be made less thin film field effect transistor gate leakage current. InMO (ZnO) のmの値は1以上50未満の整数が好ましい。 The value of m in InMO 3 (ZnO) m is an integer less than 50 preferably 1 or more. 原理的には、mの値は、無限大まで可能であるが、実用上、mの値が大きくなりすぎると、膜内でのmのばらつきが大きくなることと、酸素欠陥が生じやすくなり、その結果、膜の電気伝導度が大きくなり、ノーマリオフ型のFETが作り難くなる。 In principle, the value of m is susceptible to infinity, practically, the value of m is too large, and the variation of m in the film becomes large, it oxygen defects easily occur, As a result, increases the electrical conductivity of the film, normally-off type FET is less likely to make.
【0012】 [0012]
2. 2. ZnOを主たる構成成分として含有するホモロガス化合物InMO (ZnO) (M=In, Fe, Ga,又はAl,m=1以上50未満の整数)のバンドギャップエネルギーは、3.3eVより大きので、波長が400nm以上の可視光に対して透明である。 Band gap energy of the homologous compound InMO 3 containing ZnO as a main component (ZnO) m (M = In , Fe, Ga, or Al, m = 1 or more 50 than an integer) is than greater than 3.3 eV, wavelength is transparent to visible light of greater than or equal 400 nm. したがって、ホモロガス化合物単結晶InMO (ZnO) (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)薄膜を活性層として用いることにより、可視光透過率が高く、可視光による光誘起電流の発生がない、薄膜電界効果型トランジスタを作製できる。 Therefore, homologous compound single crystal InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) by using a thin film as an active layer, a high visible light transmittance, the visible no generation of photo-induced current caused by light, can be a thin film field effect transistor.
【0013】 [0013]
3. 3. さらに、反応性固相エピタキシャル法により製造したホモロガス化合物InMO (ZnO) (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)単結晶薄膜は化学量論組成からのずれが極めて小さく、室温付近では良質な絶縁体であることから、ホモロガス化合物単結晶InMO (ZnO) (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)薄膜を活性層として用いることにより、ノーマリーオフ作動で、スイッチング特性の良い透明薄膜電界効果型トランジスタを作製できる。 Furthermore, homologous compound InMO 3 prepared by reactive solid phase epitaxial method (ZnO) m (M = In , Fe, Ga, or Al, less than m = 1 to 50 integer) single crystal thin film from the stoichiometric composition shift is extremely small, because it is good insulator in the vicinity of room temperature, homologous compound single crystal InMO 3 (ZnO) m (M = in, Fe, Ga, or Al, m = 1 or more 50 than an integer) a thin film by using as an active layer, a normally-off operation can be made good transparent thin film field effect transistor of the switching characteristics.
【0014】 [0014]
ZnOを含むホモロガス化合物を反応性固相エピタキシャル法により室温で成膜したアモルファス状態は、1000℃程度の高温まで安定であり、その状態での電子キャリア移動度は、アモルファスシリコンに比較して、10倍以上大きい。 Amorphous state was formed at room temperature homologous compound containing ZnO by reactive solid phase epitaxial method is stable up to a high temperature of about 1000 ° C., the electron carrier mobility in this state, compared to the amorphous silicon, 10 more than double large. したがって、ホモロガスアモルファス薄膜を活性層として用いた電界効果型トランジスタは、シリコンアモルファス電界効果型トランジスタに比較して、可視光透過率が高く、光照射に対して安定に動作し、さらに、高速動作することが期待できる。 Accordingly, the field-effect transistor using e Moro gas amorphous thin as the active layer, as compared to the silicon amorphous field effect transistor, high visible light transmittance, stably operates to light irradiation, further high-speed operation it can be expected.
【0015】 [0015]
【発明の実施の形態】 DETAILED DESCRIPTION OF THE INVENTION
本発明で用いるZnOを主たる構成成分として含有するホモロガス化合物単結晶薄膜の基板には、耐熱性があり、透明な酸化物単結晶基板、例えば、YSZ(イットリア安定化ジルコニア)、サファイア、MgO、ZnO等を用いる。 The substrate of the homologous compound single crystal thin film containing ZnO is used in the present invention as a main component, there is heat resistance, a transparent oxide single-crystal substrate, for example, YSZ (yttria-stabilized zirconia), sapphire, MgO, ZnO use and the like. 中でも、ZnOを含むホモロガス化合物と格子定数が近く、該化合物と1400℃以下の温度では、化学反応しないYSZが、最も好ましい。 Of these, nearly homologous compound lattice constant containing ZnO, in the compound and 1400 ° C. temperature below do not chemically react YSZ is most preferred. これらの基板の表面平均二乗粗さRmsは、1.0nm以下のものを用いることが好ましい。 Surface mean square roughness Rms of the substrate, it is preferable to use the following: 1.0 nm. Rmsは原子間力顕微鏡で、例えば、1μm角を走査することによって算出できる。 Rms is an atomic force microscope, for example, can be calculated by scanning the 1μm square.
【0016】 [0016]
ZnOを含むホモロガス化合物アモルファス薄膜を用いる場合には、基板は耐熱性を有する必要がなく、安価なガラス基板を用いることができる。 When using a homologous compound amorphous thin film containing ZnO, the substrate need not have a heat resistance, it is possible to use an inexpensive glass substrate. 平坦度も、アモルファスシリコン電界効果型トランジスタ用に用いられるガラス基板程度で良い。 Flatness also be a glass about substrate used for an amorphous silicon field effect transistor.
【0017】 [0017]
YSZ等の酸化物単結晶基板を、大気中もしくは真空中で1000℃以上に加熱することによって超平坦化した表面が得られる。 The oxide single crystal substrates of YSZ or the like, ultra-planarized surface can be obtained by heating above 1000 ° C. in air or in a vacuum. 超平坦化した酸化物単結晶基板の表面には結晶構造を反映した構造が現れる。 Structure reflecting the crystal structure appear on the surface of the oxide single crystal substrate having a super flat. すなわち、数100nm程度の幅を持つテラスとサブnm程度の高さを持つステップからなる構造で、一般に原子状に平坦化された構造と呼ばれる。 That is, in the structure comprising the step of having a terrace and height of about sub nm with a width of about several 100 nm, commonly referred to as flattened structure to atomic.
【0018】 [0018]
テラス部分は平面上に配列した原子からなり、若干存在する欠陥の存在を無視すれば、完全に平坦化された表面である。 Terrace portion consists atoms arranged in a plane, ignoring the presence of defects present little is fully planarized surface. ステップの存在により、基板全体で完全平坦化された表面とはならない。 The presence of steps, not a fully planarized surface across the substrate. この構造を平均二乗粗さ測定方法による粗さRmsで表現すれば、Rmsは1.0nm以下のものである。 Expressed this structure roughness Rms by the mean square roughness measuring method, Rms are: 1.0 nm. Rmsは、例えば、原子間力顕微鏡で、例えば、1μm角の範囲を走査することによって算出した値である。 Rms, for example, an atomic force microscope, for example, a value calculated by scanning the range of 1μm square.
【0019】 [0019]
得られた原子平坦面を持つ耐熱性透明酸化物基板上に、MBE法、パルスレーザー蒸着法(PLD法)等により、原子平坦面を有するZnO単結晶薄膜をエピタキシャル成長させる。 To the resulting heat-resistant transparent oxide substrate having atomic flat surfaces, MBE method, a pulsed laser deposition method (PLD method), it is epitaxially grown ZnO single crystal thin film having an atomic flat surface. 次に、該ZnO薄膜上に、InMO (ZnO) (M=In, Fe, Ga, Al, m=1以上50未満の整数)と記述されるホモロガス化合物薄膜を、ターゲットとして、該酸化物の多結晶焼結体を使用して、MBE法、パルスレーザー蒸着法(PLD法)等により成長させる。 Then, on the ZnO thin film, InMO 3 (ZnO) m ( M = In, Fe, Ga, Al, m = 1 or more than 50 integer) a homologous compound thin film to be described as, as a target, the oxide use of the polycrystalline sintered body, MBE process, a pulsed laser deposition method is grown by (PLD method).
【0020】 [0020]
得られた薄膜は、単結晶膜である必要はなく、多結晶膜でも、アモルファス膜でも良い。 The resulting film does not have to be a single crystal film, in a polycrystalline film, or an amorphous film. 最後に、薄膜全体をカバーできるように高融点化合物,例えばYSZやAl を被せ、1300℃以上の高温で、ZnO蒸気を含む大気圧中で加熱拡散処理を行なう。 Finally, the high melting point compounds as can cover the entire thin film, for example, covered with a YSZ or Al 2 O 3, at a high temperature of above 1300 ° C., subjected to a heat diffusion treatment at atmospheric pressure containing ZnO vapor. 高融点化合物を被せる理由は,後述のZnO蒸気と該薄膜表面との接触を避けるためである。 Reason for covering a high melting point compound is to avoid contact with the ZnO vapor and thin film surface will be described later.
【0021】 [0021]
ZnOは蒸気圧が高いので、大気中にZnO蒸気を加えないと、加熱拡散処理中に、膜からZnOが蒸発し、加熱拡散処理後の膜組成が大幅に変化してしまい、良質な結晶膜が得られない。 Because ZnO has a high vapor pressure and without the addition of ZnO vapor to the atmosphere, during the heating diffusion treatment, ZnO is evaporated from the film, the film composition after heat diffusion treatment ends up changing substantially, good quality crystal film can not be obtained. そのため,容器体積に対し5容積%以上のZnOを反応容器に充填しておく。 Therefore, it is filled with 5 volume% or more ZnO to the container volume to the reaction vessel. 充填する該ZnOは粉末あるいは焼結体であることが好ましい。 It is preferred that the ZnO filling is a powder or a sintered body. 高温での加熱拡散処理によりZnO粉末からZnOが蒸発し、反応容器内部のZnO蒸気圧を高め,薄膜中のZnOの蒸発を抑制することができる。 ZnO is evaporated from the ZnO powder by heat diffusion treatment at a high temperature to enhance the reaction vessel inside of ZnO vapor pressure, it is possible to suppress evaporation of ZnO in the film.
【0022】 [0022]
InMO (ZnO) (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)とZnO膜が相互に拡散・反応し、温度を適切に設定すれば、均一組成InMO (ZnO) m' (M=In, Fe, Ga,又はAl, m'=1以上50未満の整数)となる。 InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) and the ZnO film is diffused and reacted with each other, by appropriately setting the temperature, homogeneous composition InMO 3 become (ZnO) m '(M = in, Fe, Ga, or Al, m' = 1 or 50 less than an integer). m'は、InMO (ZnO) (M=In, Fe, Ga,又は Al, m=1以上50未満の整数)とZnO膜厚比から決まるが、ZnO膜厚が5nm未満で、InMO (ZnO) (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)膜厚が100nmを越える場合には、m=m'である。 m 'is, InMO 3 (ZnO) m ( M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) is determined from the ZnO film thickness ratio, less than 5nm is ZnO film thickness, InMO 3 If (ZnO) m (M = in , Fe, Ga, or the Al, m = 1 or more 50 than an integer) thickness exceeds 100nm is m = m '.
【0023】 [0023]
適切な温度は800℃以上,1600℃以下,より好ましくは1200℃以上,1500℃以下である。 Suitable temperatures are 800 ° C. or higher, 1600 ° C. or less, more preferably 1200 ° C. or more and 1500 ° C. or less. 800℃未満では拡散が遅く,均一組成のInMO (ZnO) (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)が得られない。 Slow diffusion below 800 ° C., InMO 3 of uniform composition (ZnO) m (M = In , Fe, Ga, or Al, m = 1 or more 50 than an integer) can not be obtained. また,1600℃を越えるとZnOの蒸発が抑えられなくなり均一組成のInMO (ZnO) (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)が得られない。 Further, InMO of uniform composition can not be suppressed evaporation of ZnO exceeds 1600 ℃ 3 (ZnO) m ( M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) can not be obtained.
【0024】 [0024]
得られた単結晶薄膜は、MO (ZnO) 層をInO 1.5層で挟んだ自然超格子構造とみなすことができるので、MO (ZnO) 層とInO 1.5層との界面に存在する電子に、量子効果が生じる。 The obtained single crystal thin film, since the MO 3 (ZnO) m layer can be regarded as a natural superlattice structure sandwiched by InO 1.5 layers, the MO 3 (ZnO) m layer and InO 1.5 layer the electrons present in the interface, the quantum effects occur. このため、得られた単結晶薄膜は、人工超格子構造と同様に、高周波電子デバイス材料として使用することができる。 Thus, the obtained single crystal thin film, like the artificial superlattice structure can be used as a high frequency electronic device materials.
【0025】 [0025]
また、反応性固相エピタキシャル成長法で得られたZnOを含むホモロガス単結晶膜は、化学量論組成に近く、室温では、10 W・cm以上の高い絶縁性を示し、ノーマリーオフ電界効果型トランジスタに適している。 Also, homologous single-crystal film containing ZnO obtained by the reactive solid phase epitaxial growth method is close to the stoichiometric composition, at room temperature, it shows a more than 10 8 W · cm high insulating properties, normally-off field effect It is suitable for the transistor.
【0026】 [0026]
得られたZnOを主たる構成成分として含有するホモロガス単結晶薄膜を活性層とした、トップゲート型MIS電界効果型トランジスタを作製することができる。 The homologous single-crystal thin film containing the obtained ZnO as main component and an active layer, can be manufactured top-gate type MIS field-effect transistor.
図3に示すように、まず、基板1上にエピタキシャル成長したZnOを主たる構成成分として含有するホモロガス単結晶薄膜2上にゲート絶縁膜3及びゲート電極4用の金属膜を形成する。 As shown in FIG. 3, first, a metal film of the gate insulating film 3 and the gate electrode 4 on homologous single-crystal thin film 2 containing ZnO epitaxially grown on the substrate 1 as a main component. ゲート絶縁膜3には、Al が最も適している。 The gate insulating film 3, Al 2 O 3 is most suitable. ゲート電極4用金属膜は、Au,Ag,Al、又はCu等を用いることができる。 Metal film for a gate electrode 4 may be used Au, Ag, Al, or Cu or the like. 光リゾグラフィー法及びドライエッチング、又はリフトオフ法により、ゲート電極4を作製し、最後に、ソース電極5及びドレイン電極6を作成する。 Light lyso Photography method and a dry etching, or by a lift-off method, to prepare a gate electrode 4, finally, to create a source electrode 5 and drain electrode 6. 本発明の電界効果型トランジスタの形状は、トップゲート型MIS電界効果型トランジスタ(MIS−FET)に限られるものではなく、J−FET等も含まれる。 The shape of the field-effect transistor of the present invention is not limited to the top gate type MIS field-effect transistor (MIS-FET), J-FET or the like are also included.
【0027】 [0027]
ZnOを主たる構成成分として含有するホモロガスアモルファス薄膜を用いても、同様に、トップゲート型MIS電界効果型トランジスタを作成することができる。 Be used e Moro gas amorphous thin film containing ZnO as a main component, similarly, it is possible to create a top-gate type MIS field-effect transistor. また、アモルファス薄膜の場合は、エピタキシャル成長させる必要はないので、ZnOエピタキシャル成長及び高温アニールプロセスを除くことができる。 In the case of amorphous thin, it is not necessary to epitaxially grow, can be removed ZnO epitaxial growth and high temperature annealing process. このために、ゲート電極を基板と膜の間に作りつけることが可能で、ボトムゲート型MIS電界効果型トランジスタも作製することができる。 For this, can be given to make a gate electrode between the substrate and the film can also be made bottom-gate type MIS field-effect transistor.
【0028】 [0028]
【実施例】 【Example】
以下に実施例を挙げて本発明を詳細に説明する実施例1 Example 1 illustrate the present invention the following examples
1. 1. 単結晶InGaO (ZnO) 薄膜の作製YSZ (111)単結晶基板上にPLD法により厚み2nmのZnO薄膜を基板温度700℃でエピタキシャル成長させた。 The ZnO thin film having a thickness of 2nm was epitaxially grown at a substrate temperature of 700 ° C. The single crystal InGaO 3 (ZnO) 5 thin film prepared YSZ (111) PLD method on a single crystal substrate. 次に、基板温度を室温まで冷却し、該ZnOエピタキシャル薄膜上にPLD法により、厚み150nmの多結晶InGaO (ZnO) 薄膜を堆積させた。 Then, the substrate was cooled to room temperature, by the PLD method on the ZnO epitaxial thin film was deposited a polycrystalline InGaO 3 (ZnO) 5 thin film having a thickness of 150 nm. こうして作製した二層膜を大気中に取り出し、電気炉を用いて、大気中、1400℃、30min加熱拡散処理した後、室温まで冷却した。 Thus removed bilayer film produced in the atmosphere by using an electric furnace in the atmosphere, 1400 ° C., after 30min heat diffusion treatment, and cooled to room temperature.
【0029】 [0029]
XRD測定の結果、図1に示すように、加熱して得られた薄膜は単結晶InGaO (ZnO) であり、また、図2に示すように、AFM観察の結果、薄膜表面は原子レベルで平坦なテラスと、高さ2nmのステップからなる原子レベルで平坦な面であった。 XRD results of the measurement, as shown in FIG. 1, a thin film obtained by heating is 5 single crystal InGaO 3 (ZnO), also as shown in FIG. 2, AFM observation showed that the thin film surface is atomically in a flat terrace and a flat surface at the atomic level comprising a step of height 2 nm.
単結晶InGaO (ZnO) 薄膜の導電率を直流四端子法により測定しようと試みたが、膜の絶縁性が高いために測定できなかった。 The single crystal InGaO 3 (ZnO) 5 thin film conductivity of the attempts to measure by a direct current four-terminal method, but could not be measured due to the high insulating property of the film. 作製した単結晶InGaO (ZnO) 薄膜は絶縁体であると言える。 Single crystal InGaO 3 (ZnO) 5 thin film prepared is said to be an insulator. 室温で測定した光吸収スペクトルからInGaO (ZnO) のバンドギャップは約3.3eVと見積もられた。 Bandgap of InGaO 3 (ZnO) 5 from light absorption spectrum measured at room temperature was estimated to be about 3.3 eV.
【0030】 [0030]
2. 2. MISFET素子の作製フォトリソグラフィー法により、トップゲート型MISFET素子を作製した。 By making photolithography of the MISFET element was prepared top gate type MISFET element.
ソースとドレイン電極及びゲート絶縁膜にはAu及びアモルファスAl をそれぞれ用いた。 The source and drain electrodes and the gate insulating film with Au and amorphous Al 2 O 3, respectively. チャネル長及びチャネル幅はそれぞれ0.05mm及び0.2mmである。 The channel length and the channel width is 0.05mm and 0.2mm, respectively.
【0031】 [0031]
3. 3. MISFET素子の特性評価図4に、室温下で測定したMISFET素子の電流−電圧特性を示す。 Characterization Figure 4 of the MISFET device, the current of the MISFET element measured at room temperature - voltage characteristics thereof are shown. ゲート電圧V =0V時にはI DS =10 −8 A(V DS =2.0 V)であり、いわゆるノーマリーOFF特性が得られた。 The gate voltage V G = 0V sometimes I DS = 10 -8 A (V DS = 2.0 V), so-called a normally OFF characteristic was obtained. また、V =10 V時には、I DS =1.6X 10 −6 Aの電流が流れた。 Also, V G = 10 V at times flowed a current of I DS = 1.6X 10 -6 A. これはゲートバイアスにより絶縁体のInGaO (ZnO) 単結晶薄膜内にキャリアを誘起できたことに対応する。 This corresponds with successful induction of carriers InGaO 3 (ZnO) 5 single crystal thin film of an insulator with gate bias. 作製した素子に可視光を照射して同様の測定を行なったが、数値の変化は認められなかった。 It was measured similar by irradiating visible light to the fabricated device, but the change in values ​​were not observed. 可視光での光誘起電流の発生は認められなかった。 Generation of light-induced current in the visible light was observed.
【0032】 [0032]
【発明の効果】 【Effect of the invention】
本発明の透明薄膜電界効果型トランジスタは、波長400nm以上の可視光・赤外光に対して透明である上、ノーマリーOFFのスイッチングが可能である。 Transparent thin film field effect transistor of the present invention, on a transparent to more visible and infrared light wavelength 400 nm, is capable of switching the normally OFF. 本発明の透明薄膜電界効果型トランジスタをLCDのスイッチング素子として応用することにより、バックライト光をロスなく有効に使うことができる上、シースルー型のディスプレイへの発展が期待できる。 By applying the transparent thin film field effect transistor of the present invention as a LCD of the switching element, on which it is possible to use a back light without loss effectively, the development of the see-through display can be expected.
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】図1は、実施例1で作製した単結晶InGaO (ZnO) 薄膜のXRD測定の結果を示すグラフである。 [1] Figure 1 is a graph showing the results of a single crystal InGaO 3 (ZnO) 5 thin film XRD measurements made in Example 1.
【図2】図2は、実施例1で作製した単結晶InGaO (ZnO) 薄膜の表面構造示す図面代用AFM観察写真である。 Figure 2 is a drawing substitute AFM observation photograph showing the surface structure of single crystal InGaO 3 (ZnO) 5 thin film prepared in Example 1.
【図3】図3は、本発明の一実施形態のMISFET素子の構造を示す模式図である。 Figure 3 is a schematic diagram showing the structure of a MISFET device in an embodiment of the present invention.
【図4】図4は、実施例1で作製したMISFET素子の室温下で測定した電流−電圧特性を示すグラフである。 Figure 4 shows the current was measured at room temperature of the MISFET element prepared in Example 1 - is a graph showing the voltage characteristic.

Claims (4)

  1. ホモロガス化合物InMO (ZnO) (M=In, Fe, Ga ,又はAl, m=1以上50未満の整数)薄膜を活性層として用いることを特徴とする透明薄膜電界効果型トランジスタ。 Homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 50 less integer higher) transparent thin film field effect transistor characterized by using a thin film as an active layer.
  2. 表面が原子レベルで平坦である単結晶又はアモルファスホモロガス化合物薄膜を用いることを特徴とする請求項1記載の透明薄膜電界効果型トランジスタ。 Transparent thin film field effect transistor of claim 1, wherein the surface is characterized by using a single crystal or amorphous e Moro gas compound thin film is flat at the atomic level.
  3. ホモロガス化合物が耐熱性、透明酸化物単結晶基板上に形成された単結晶薄膜であることを特徴とする請求項1記載の透明薄膜電界効果型トランジスタ。 Homologous compound is heat-resistant, transparent oxide transparent thin film field effect transistor according to claim 1, characterized in that a single crystal thin film formed on a single crystal substrate.
  4. ホモロガス化合物がガラス基板上に形成されたアモルファス薄膜であることを特徴とする請求項1記載の透明薄膜電界効果型トランジスタ。 Transparent thin film field effect transistor of claim 1, wherein the homologous compound is an amorphous thin film formed on a glass substrate.
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