JPS63210024A - Compound having laminar structure of hexagonal crystal system expressed by ingazn5o8 and its production - Google Patents
Compound having laminar structure of hexagonal crystal system expressed by ingazn5o8 and its productionInfo
- Publication number
- JPS63210024A JPS63210024A JP4115387A JP4115387A JPS63210024A JP S63210024 A JPS63210024 A JP S63210024A JP 4115387 A JP4115387 A JP 4115387A JP 4115387 A JP4115387 A JP 4115387A JP S63210024 A JPS63210024 A JP S63210024A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- compound
- compd
- heated
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000013078 crystal Substances 0.000 title description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000003054 catalyst Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229940110676 inzo Drugs 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Abstract
PURPOSE:To produce the title novel compd., by substituting each In<3+>, Ga<3+>, and Zn<2+> for Yb<3+>, Fe<3+>, and Fe<2+> respectively of a compd. expressed by the chemical formula: (YbFeO3)nFeO wherein (n) is 1/5. CONSTITUTION:(A) Metallic In, In oxide, or a compd. decomposed to In oxide by heating, (B) metallic Ga, Ga oxide, or a compd. decomposed to Ga oxide by heating, and (C) metallic Zn, Zn oxide, or a compd. decomposed to Zn oxide by heating are mixed in a proportion of A:B:C=1:1:5 expressed in terms of atomic ratio. The mixture is heated at >=800 deg.C in the atmospheric air, in oxidizing atmosphere, or in reducing atmosphere wherein each In and Ga is not reduced to below tervalent ionic state, and Zn is not reduced to below divalent ionic state, to obtain thus the title compd. The obtd. compd. is useful as an optically functional material, semiconductor material, or catalyst.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料および触媒材料として
有用な新規化合物である１ｎＧａＺｎＳＯ，で示される
六方晶系の層状構造を有する化合物およびその製造法に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by 1nGaZnSO, which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and a method for producing the same. .
従来技術
従来、（Ｙｂ”Ｆｅ”Ｏｓ） 、Ｐｅ”０（ｎは整数を
示す）で示される六方晶系の層状構造を有する化合物は
本出願人によって合成され知られている。Prior Art Conventionally, compounds having a hexagonal layered structure represented by (Yb"Fe"Os) and Pe"0 (n is an integer) have been synthesized by the present applicant and are known.
ＹｂＦｅｚＯ４，ＹｂｇＦｅｓＯｙ＋Ｙｂ３ＦｅＪＯ＋
ｏ及びＹｂ４Ｆｅｓ（１＋ｚの六方晶系としての格子定
数、ＹｂＯ＋、ｓ層、Ｆｅｄ、、。YbFezO4, YbgFesOy+Yb3FeJO+
o and Yb4Fes (1+z lattice constant as hexagonal system, YbO+, s-layer, Fed,...
層、 ＦｅｚＯｔ、ｓ層の単位格子内における層数を示
すと表−１の通りである。Table 1 shows the number of layers in the unit cell of the FezOt and s layers.
これらの化合物は酸化鉄（Ｆｅｄ） １モルに対して、
ＹｂＦｅ０．がｎモル（ｎ＝１．２．３−）の割合で化
合していると考えられる層状構造を持つ化合物である。These compounds are based on 1 mole of iron oxide (Fed).
YbFe0. It is a compound with a layered structure that is thought to be combined at a ratio of n moles (n = 1.2.3-).
発明の目的
本発明は（ＹｂＦｅＯ＋） ｎＦｅｏの化学式において
、ｎ＝１７５に相当し、Ｙｂ”の代わりにＩｎ”を、Ｆ
ｅ３＋の代わりにＧａ”を、Ｆｅ”の代わりにＺｎ”＋
を置きかえて得られた新規な化合物を提供するにある。Purpose of the Invention The present invention relates to (YbFeO +
Ga” instead of e3+, Zn”+ instead of Fe”
The object of the present invention is to provide a novel compound obtained by replacing .
発明の構成
本発明のＩｎＧａＺｎ５０Ｂで示される化合物は、イオ
ン結晶モデルではＩｎ”（Ｇａ”、Ｚｎ” ）Ｚｎ４”
０６”−とじて記載され、その構造はＩｎＯ＋、ｓ層、
（Ｇａ”。Structure of the Invention The compound represented by InGaZn50B of the present invention is In''(Ga'', Zn'')Zn4'' in the ionic crystal model.
06”-, its structure is InO+, s layer,
(Ga”.
Ｚｎ”） Ｏｘ、 ｓｋｉおよびＺｎＯ層の積層によっ
て形成されており、著しい構造異方性を持つことがその
特徴の一つである。Ｚｎ”・イオン数の１１５はＧａ”
と共に（Ｇａ” 、 Ｚｎ” ）Ｏｚ、ｓ層を作り、残
りの４７５はＺｎＯ層を作っている。六方晶系としての
格子定数は次の通りである。It is formed by laminating layers of Zn") Ox, ski, and ZnO, and one of its characteristics is that it has remarkable structural anisotropy. The number of Zn" ions, 115, is Ga"
Together with (Ga", Zn"), Oz and S layers are formed, and the remaining 475 are ZnO layers. The lattice constants as a hexagonal crystal system are as follows.
ａ ＝３．２８０ ± ０．００１ （人）ｃ ＝
５７．１４ ± ０．０１ （人）この化合物の
面指数（ｈｋｌ）、面間隔（ｄ（人））（ｄ、は実測値
＋ ｄＣは計算値を示す）およびＸ線に対する相対反射
強度（１％）を示すと、表−２の通りである。a = 3.280 ± 0.001 (person) c =
57.14 ± 0.01 (person) This compound's plane index (hkl), plane spacing (d (person)) (d is the measured value + dC is the calculated value), and the relative reflection intensity for X-rays (1 %) is shown in Table 2.
この化合物は光機能材料、半導体材料、触媒材料等に有
用なものである。This compound is useful for optical functional materials, semiconductor materials, catalyst materials, etc.
この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.
金属インジウムあるいは酸化インジウムもしくは加熱に
より酸化インジウムに分解される化合物と、金属ガリウ
ムあるいは酸化ガリウムもしくは加熱により酸化ガリウ
ムに分解される化合物と、金属亜鉛あるいは酸化亜鉛も
しくは加熱により酸化亜鉛に分解される化合物とを、Ｉ
ｎ＋ ＧａおよびＺｎの割合が原子比で１対１対５の割
合で混合し、該混合物を８００°Ｃ以上の温度で、大気
中、酸化性雰囲気中あるいはＩｎおよびＧａが各々３価
イオン状態、Ｚｎが２価イオン状態より還元されない還
元雰囲気中で加熱することによって製造し得られる。Indium metal or indium oxide or a compound that decomposes into indium oxide when heated; gallium metal or gallium oxide or a compound that decomposes into gallium oxide when heated; and zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. ,I
n+ Ga and Zn are mixed at an atomic ratio of 1:1:5, and the mixture is heated at a temperature of 800°C or higher in the air, in an oxidizing atmosphere, or when In and Ga are each in a trivalent ion state, It can be produced by heating in a reducing atmosphere in which Zn is not reduced from a divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に１０μｍ以下であることが好
ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size, particularly preferably 10 μm or less.
また、光機能材料、半導体材料として用いる場合には不
純物の混入をきらうので、純度の高いことが好ましい。Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided.
出発物質が加熱により金属酸化物を得る化合物としては
、それぞれの金属の水酸化物、炭酸塩、硝酸塩等が挙げ
られる。Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Ｉｎ、 Ｇａ、及びＺｎの割合が原
子比で１対１対５の割合であることが必要である。The mixing ratio of the raw materials must be such that the atomic ratio of In, Ga, and Zn is 1:1:5.
これをはずすと目的とする化合物の単−相を得ることが
できない。If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはＩｎおよ
びＧａが各々３価イオン状態、Ｚｎが２価イオン状態か
ら還元されない還元雰囲気中で８００℃以上のもとで加
熱する。加熱時間は数時間もしくはそれ以上である。加
熱の際の昇温速度には制約はない。加熱終了後急冷する
か、あるいは大気中に急激に引き出せばよい。This mixture is heated at 800° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which In and Ga are not reduced from their respective trivalent ion states and Zn from their divalent ion state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere.
得られたＩｎＧａＺｎ５Ｏａ化合物あ粉末は無色であり
、粉末Ｘ線回折法によって結晶構造を有することが分か
った。その結晶構造は層状構造であり、Ｉｎｋ、、Ｓ層
、 （Ｇａ、 Ｚｎ）Ｏｚ、ｓ層、およびＺｎＯ層の積
み重ねによって形成されていることが分かった。The obtained InGaZn5Oa compound powder was colorless and was found to have a crystal structure by powder X-ray diffraction. It was found that its crystal structure is a layered structure, formed by stacking Ink, S layer, (Ga, Zn)Oz, S layer, and ZnO layer.
実施例
純度９９．９９％以上の酸化インジウム（ＩｎｚＯ＋）
粉末、純度９９．９９％以上の酸化ガリウム（ｃａｚｏ
ｉ）粉末、および試薬特級の酸化亜鉛（ＺｎＯ）粉末を
モル比で１対１一対ｌＯの割合に秤量し、めのう乳鉢内
でエタノールを加えて、約３０分間部合し、平均粒径数
μｍの微粉末混合物を得た。該混合物を白金管内に封入
し、１４５０℃に設定された管状シリコニット炉内に入
れ８日間加熱し、その後、試料を炉外にとりだし室温ま
で急速に冷却した。得られた試料はＩｎＧａＺｎ６０１
単−相であり、粉末Ｘ線回折法によって面指数（ｈｋｌ
）、面間隔（ｄｏ）および相対反射強度（１％）を測定
した。その結果は表−２の通りであった。Example Indium oxide (InzO+) with a purity of 99.99% or more
Powder, gallium oxide (cazo) with a purity of 99.99% or more
i) Powder and reagent grade zinc oxide (ZnO) powder were weighed at a molar ratio of 1:1:1:10, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to obtain an average particle size of several μm. A fine powder mixture was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1450° C., and heated for 8 days, and then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was InGaZn601
It is single-phase and has a surface index (hkl) determined by powder X-ray diffraction.
), interplanar spacing (do) and relative reflection intensity (1%) were measured. The results were as shown in Table-2.
六方晶系としての格子定数は
ａ ＝３．２８０ ±０．００１ （人）Ｃ＝５７．
１４ ±０．０１ （人）であった。The lattice constant as a hexagonal crystal system is a = 3.280 ±0.001 (person) C = 57.
14 ±0.01 (persons).
上記の格子定数および表−２の面指数（ｈ ｋ １）よ
り算出した面間隔（ｄＣ（人））は、実測の面間隔（ｄ
。The plane spacing (dC (person)) calculated from the above lattice constant and the plane index (h k 1) in Table 2 is the actually measured plane spacing (d
.
（人））と極めてよく一致した。There was a very good agreement with (person).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を パる。Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
特許出願人 科学技術庁無機材質研究所長潮 高
信 雄Patent applicant Takashi Nagashio, Institute of Inorganic Materials, Science and Technology Agency
Nobuo
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by InGaZn_5O_8.
加熱により酸化インジウムに分解される化合物と、金属
ガリウムあるいは酸化ガリウムもしくは加熱により酸化
ガリウムに分解される化合物と、金属亜鉛あるいは酸化
亜鉛もしくは加熱により酸化亜鉛に分解される化合物と
を、Ｉｎ、ＧａおよびＺｎの割合が原子比で１対１対５
の割合で混合し、該混合物を８００℃以上の温度で、大
気中、酸化性雰囲気中あるいはＩｎおよびＧａが各々３
価イオン状態、Ｚｎが２価イオン状態より還元されない
還元雰囲気中で加熱することを特徴とするＩｎＧａＺｎ
＿５Ｏ＿８で示される六方晶系の層状構造を有する化合
物の製造法。(2) Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; metallic gallium or gallium oxide or a compound that decomposes into gallium oxide when heated; metal zinc or zinc oxide or a compound that decomposes into zinc oxide when heated; and a compound with an atomic ratio of In, Ga, and Zn of 1:1:5.
The mixture is mixed at a temperature of 800°C or higher in the air, an oxidizing atmosphere, or when In and Ga are
InGaZn in a valent ion state and heated in a reducing atmosphere where Zn is not reduced more than in a divalent ion state
A method for producing a compound having a hexagonal layered structure represented by _5O_8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4115387A JPH0244260B2 (en) | 1987-02-24 | 1987-02-24 | INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4115387A JPH0244260B2 (en) | 1987-02-24 | 1987-02-24 | INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63210024A true JPS63210024A (en) | 1988-08-31 |
| JPH0244260B2 JPH0244260B2 (en) | 1990-10-03 |
Family
ID=12600475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4115387A Expired - Lifetime JPH0244260B2 (en) | 1987-02-24 | 1987-02-24 | INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244260B2 (en) |
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| JPH0244260B2 (en) | 1990-10-03 |
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