JPH0244247B2 - SCGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO - Google Patents

Description

[Detailed description of the invention]

INDUSTRIAL APPLICATION FIELD The present invention relates to a compound having a hexagonal layered structure represented by ScGaZn ₂ O ₅ , which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and a method for producing the same. Conventional technology Conventionally, (Yb ³⁺ Fe ³⁺ O ₃ ) _o Fe ²⁺ O (n indicates an integer)
The compound having a hexagonal layered structure represented by is synthesized by the applicant and is known. YbFe ₂ O ₄ , Yb ₂ Fe ₃ O ₇ , Yb ₃ Fe ₄ O ₁₀ and
Lattice constant of Yb ₄ Fe ₅ O ₁₃ as hexagonal system, YbO _1.5
Table 1 shows the number of layers in the unit cell, FeO _1.5 layer, and Fe ₂ O _2.5 layer. These compounds have a layered structure in which YbFeO ₃ is thought to be combined at a ratio of n moles (n=1, 2, 3...) per mole of iron oxide (FeO).

[Table] Purpose of the invention The present invention is based on the chemical formula of (YbFeO ₃ ) _o FeO,
Corresponds to n = 1/2, Sc ³⁺ instead of Yb ³⁺ , Fe ³⁺
The present invention provides a novel compound obtained by replacing Ga ³⁺ with Zn 2+ and Fe ²⁺ with Zn ²⁺ . Structure of the Invention In the ionic crystal model, the compound represented by ScGaZn ₂ O ₅ of the present invention is Sc ³⁺ (Ga ³⁺ , Zn ²⁺ )Zn ²⁺ O ₅ ^2-
Its structure is ScO _1.5 layer, (Ga ³⁺ ,
It is formed by laminating Zn ²⁺ )O _2.5 layers and ZnO layers, and one of its characteristics is that it has significant structural anisotropy. Half of the Zn ²⁺ ions form a (Ga ³⁺ , Zn ²⁺ ) ^O _2.5 layer with Ga 3+, and the other half
Creating a ZnO layer. The lattice constants as a hexagonal crystal system are as follows. a = 3.262 ± 0.001 (Å) c = 22.50 ± 0.01 (Å) Planar index (hkl), interplanar spacing (d (Å)) of this compound
(d _p is an actual measured value, d _c is a calculated value) and the relative reflection intensity (I%) for X-rays is shown in Table 2. This compound is useful for optical functional materials, semiconductor materials, catalyst materials, etc.

【table】

[Table] This compound can be produced by the following method. Scandium metal or scandium oxide or a compound that decomposes into scandium oxide when heated; gallium metal or gallium oxide or a compound that decomposes into gallium oxide when heated; and zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. , Sc, Ga
and Zn in an atomic ratio of 1:1:2, and the mixture was heated in the air at a temperature of 600°C or higher,
It can be produced by heating in an oxidizing atmosphere or in a reducing atmosphere in which Sc and Ga are not reduced to a trivalent ion state, and Zn is not reduced to a divalent ion state. Commercially available starting materials used in the present invention may be used as they are, but in order for the chemical reaction to proceed quickly, it is better to have a small particle size, especially 10 μm.
It is preferable that it is below. Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided. Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals. The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc. The mixing ratio of the raw materials needs to be such that the ratio of Sc, Ga, and Zn is 1:1:2 in terms of atomic ratio. If this is removed, a single phase of the target compound cannot be obtained. This mixture is stored in the air, in an oxidizing atmosphere, or
At 600℃ in a reducing atmosphere where Sc and Ga are not reduced from the trivalent ion state and Zn from the divalent ion state.
Heat under the above conditions. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere. The obtained ScGaZn ₂ O ₅ compound powder was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is layered,
It was found that it was formed by stacking _1.5 layers of ScO, _2.5 layers of (Ga, Zn)O, and a layer of ZnO. Example Scandium oxide (Sc ₂ O ₃ ) with a purity of 99.99% or more
Powder, gallium oxide (Ga ₂ O ₃ ) with a purity of over 99.99%
Powder and reagent-grade zinc oxide (ZnO) powder were weighed at a molar ratio of 1:1:4, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to form a fine powder with an average particle size of several μm. A mixture was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1300°C, and heated for 3 days, and then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample had a single phase of ScGaZn ₂ O ₅ , and the planar index (hkl), interplanar spacing (d _p ), and relative reflection intensity (I%) were measured by powder X-ray diffraction. The results were as shown in Table-2. The lattice constants as a hexagonal crystal system were a=3.262±0.001 (Å) and c=22.50±0.01 (Å). The above lattice constants and the surface index (hkl) in Table 2
The calculated interplanar spacing (d _c (Å)) agreed extremely well with the actually measured interplanar spacing (d _p (Å)). Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.

Claims (1)

[Claims] 1. A compound having a hexagonal layered structure represented by ScGaZn ₂ O ₅ . 2 Scandium metal or scandium oxide or a compound that decomposes into scandium oxide when heated; gallium metal or gallium oxide or a compound that decomposes into gallium oxide when heated; and zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. and, Sc,
Ga and Zn are mixed in an atomic ratio of 1:1:2, and the mixture is heated at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or in an oxidizing atmosphere where Sc and Ga are each in a trivalent ion state and Zn is in a trivalent ion state. 1. A method for producing a compound having a hexagonal layered structure represented by ScGaZn ₂ O ₅ , which comprises heating in a reducing atmosphere that does not reduce the divalent ion state.