JPH0314779B2 - - Google Patents
Info
- Publication number
- JPH0314779B2 JPH0314779B2 JP62109526A JP10952687A JPH0314779B2 JP H0314779 B2 JPH0314779 B2 JP H0314779B2 JP 62109526 A JP62109526 A JP 62109526A JP 10952687 A JP10952687 A JP 10952687A JP H0314779 B2 JPH0314779 B2 JP H0314779B2
- Authority
- JP
- Japan
- Prior art keywords
- compound
- heating
- oxide
- decomposed
- lutetium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 claims description 22
- 239000011701 zinc Substances 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052765 Lutetium Inorganic materials 0.000 claims description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910003443 lutetium oxide Inorganic materials 0.000 claims description 5
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Catalysts (AREA)
Description
産業上の利用分野
本発明は光機能材料、半導体材料および触媒材
料として有用な新規化合物であるLuGaZn7O10で
示される六方晶系の層状構造を有する化合物およ
びその製造法に関する。
従来技術
従来、(Yb3+Fe3+O3)oFe2+0(nは整数を表わ
す)で示される六方晶系の層状構造を有する化合
物は本出願人によつて合成され知られている。
YbFe2O4、Yb2Fe3O7、Yb3Fe4O10及び
Yb4Fe5O13の六方晶系としての格子定数、YbO1.5
層、FeO1.5層、Fe2O2.5層の単位格子内における
層数を示すと表−1の通りである。
これらの化合物は酸化鉄1モルに対して、
YbFeO3がnモルの割合で化合していると考えら
れる層状構造を持つ化合物である。
INDUSTRIAL APPLICATION FIELD The present invention relates to a compound having a hexagonal layered structure represented by LuGaZn 7 O 10 , which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and a method for producing the same. Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb 3+ Fe 3+ O 3 ) o Fe 2+ 0 (n represents an integer) was synthesized by the applicant and was known. There is. YbFe 2 O 4 , Yb 2 Fe 3 O 7 , Yb 3 Fe 4 O 10 and
Lattice constant of Yb 4 Fe 5 O 13 as hexagonal system, YbO 1.5
Table 1 shows the number of layers in the unit cell, FeO 1.5 layer, and Fe 2 O 2.5 layer. These compounds are per mole of iron oxide,
It is a compound with a layered structure that is thought to be composed of n moles of YbFeO 3 .
【表】
発明の目的
本発明は(YbFeO3)oFeOの化学式において、
n=1/7に相当し、Yb3+の代わりにLu3+を、Fe3+
の代わりにGa3+を、Fe2+の代わりにZn2+を置き
かえて得られた新規化合物を提供するにある。
発明の構成
本発明のLuGaZn7O10で示される化合物は、イ
オン結晶モデルではLu3+(Ga3+、Zn2+)Zn6 2+2+
O10 2-として記載され、その構造はLuO1.5層、
(Ga3+、Zn2+)O2.5層およびZnO層の積層によつ
て形成されており、著しい構造異方性を持つこと
がその特徴の一つである。Zn2+イオンの1/7は
Ga3+と共に(Ga3+、Zn2+)O2.5層を作り、残り
の6/7はZnO層を作つている。六方晶系としての
格子定数は次の通りである。
a=3.307±0.001(Å)
c=72.01±0.01(Å)
この化合物の面指数(hkl)、面間隔(d(Å))
(dpは実測値、dcは計算値を示す)およびX線に
対する相対反射強度(I%)を示すと、表−2の
通りである。
この化合物は光機能材料、半導体材料、触媒材
料等に有用なものである。[Table] Purpose of the invention The present invention is based on the chemical formula of (YbFeO 3 ) o FeO,
Corresponds to n = 1/7, Lu 3+ instead of Yb 3+ , Fe 3+
The present invention provides a novel compound obtained by replacing Ga 3+ with Zn 2+ and Fe 2+ with Zn 2+ . Structure of the Invention In the ionic crystal model, the compound represented by LuGaZn 7 O 10 of the present invention is Lu 3+ (Ga 3+ , Zn 2+ )Zn 6 2+ 2+
Described as O 10 2- , its structure is LuO 1.5 layers,
It is formed by laminating a (Ga 3+ , Zn 2+ )O 2.5 layer and a ZnO layer, and one of its characteristics is that it has significant structural anisotropy. 1/7 of Zn 2+ ion is
Together with Ga 3+ , (Ga 3+ , Zn 2+ )O 2.5 layers are formed, and the remaining 6/7 forms a ZnO layer. The lattice constants as a hexagonal crystal system are as follows. a = 3.307 ± 0.001 (Å) c = 72.01 ± 0.01 (Å) Planar index (hkl), interplanar spacing (d (Å)) of this compound
(d p is an actual measured value, d c is a calculated value) and the relative reflection intensity (I%) for X-rays is shown in Table 2. This compound is useful for optical functional materials, semiconductor materials, catalyst materials, etc.
【表】【table】
【表】【table】
【表】
この化合物は次の方法によつて製造し得られ
る。
金属ルテチウムあるいは酸化ルテチウムもしく
は加熱により酸化ルテチウムに分解される化合物
と、金属ガリウムあるいは酸化ガリウムもしくは
加熱により酸化ガリウムに分解される化合物と、
金属亜鉛あるいは酸化亜鉛もしくは加熱により酸
化亜鉛に分解される化合物とを、Lu、Gaおよび
Znの割合が原子比で1対1対7の割合で混合し、
該混合物を600℃以上の温度で、大気中、酸化性
雰囲気中あるいはLuおよびGaが各々3価イオン
状態、Znが2価イオン状態より還元されない還
元雰囲気中で加熱することによつて製造し得られ
る。
本発明に用いる出発物質は市販のものをそのま
ま使用してもよいが、化学反応を速やかに進行さ
せるためには粒径が小さい方がよく、特に10μm
以下であることが好ましい。
また、光機能材料、半導体材料として用いる場
合には不純物の混入をきらうので、純度の高いこ
とが好ましい。出発物質が加熱により金属酸化物
を得る化合物としては、それぞれの金属の水酸化
物、炭酸塩、硝酸塩等が挙げられる。
原料はそのまま、あるいはアルコール類、アセ
トン等と共に充分に混合する。
原料の混合割合は、Lu、Ga、及びZnの割合が
原子比で1対1対7の割合であることが必要であ
る。これをはずすと目的とする化合物の単一相を
得ることができない。
この混合物を大気中、酸化性雰囲気中あるいは
LuおよびGaが各々3価イオン状態、Znが2価イ
オン状態から還元されない還元雰囲気中で600℃
以上のもとで加熱する。加熱時間は数時間もしく
はそれ以上である。加熱の際の昇温速度には制約
はない。加熱終了後急冷するか、あるいは大気中
に急激に引き出せばよい。
得られたLuGaZn7O10化合物の粉末は無色であ
り、粉末X線回折法によつて結晶構造を有するこ
とが分かつた。その結晶構造は層状構造であり、
LuO1.5層、(Ga、Zn)O2.5層およびZnO層の積み
重ねによつて形成されていることが分かつた。
実施例
純度99.99%以上の酸化ルテチウム(Lu2O3)
粉末、純度99.99%以上の酸化ガリウム(Ga2O3)
粉末および試薬特級の酸化亜鉛(ZnO)粉末をモ
ル比で1対1対14の割合に秤量し、めのう乳鉢内
でエタノールを加えて、約30分間混合し、平均粒
径数μmの微粉末混合物を得た。該混合物を白金
管内に封入し、1450℃に設定された管状シリコニ
ツト炉内に入れ、3日間加熱し、その後、試料を
炉外にとりだし室温まで急速に冷却した。得られ
た試料はLuGaZn7O10単一相であつた。粉末X線
回折法によつて面指数(hkl)、面間隔(dp)およ
び相対反射強度(I%)を測定した。その結果は
表−2の通りであつた。
六方晶系としての格子定数は
a=3.307±0.001(Å)
c=72.01±0.01(Å)
であつた。
上記の格子定数および表−2の面指数(hkl)
より算出した面間隔(dc(Å))は、実測の面間隔
(dp(Å))と極めてよく一致した。
発明の効果
本発明は光機能材料、半導体材料及び触媒とし
て有用な新規化合物を提供する。[Table] This compound can be produced by the following method. Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating;
Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating is
Mixing Zn at an atomic ratio of 1:1:7,
It can be produced by heating the mixture at a temperature of 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Lu and Ga are not reduced to a trivalent ion state and Zn is not reduced to a divalent ion state. It will be done. Commercially available starting materials used in the present invention may be used as they are, but in order for the chemical reaction to proceed quickly, it is better to have a small particle size, especially 10 μm.
It is preferable that it is below. Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided. Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals. The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc. The mixing ratio of the raw materials needs to be such that the ratio of Lu, Ga, and Zn is 1:1:7 in atomic ratio. If this is removed, a single phase of the target compound cannot be obtained. This mixture is stored in the air, in an oxidizing atmosphere, or
600℃ in a reducing atmosphere where Lu and Ga are not reduced from the trivalent ion state and Zn from the divalent ion state.
Heat under the above conditions. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere. The obtained LuGaZn 7 O 10 compound powder was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is layered,
It was found that it was formed by stacking 1.5 layers of LuO, 2.5 layers of (Ga, Zn)O, and a layer of ZnO. Example Lutetium oxide (Lu 2 O 3 ) with a purity of 99.99% or more
Powder, gallium oxide (Ga 2 O 3 ) with a purity of over 99.99%
Weigh powder and reagent grade zinc oxide (ZnO) powder at a molar ratio of 1:1:14, add ethanol in an agate mortar, and mix for about 30 minutes to form a fine powder mixture with an average particle size of several μm. I got it. The mixture was sealed in a platinum tube, placed in a tubular silicone furnace set at 1450°C, and heated for 3 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample had a single phase of LuGaZn 7 O 10 . Planar index (hkl), planar spacing (d p ), and relative reflection intensity (I%) were measured by powder X-ray diffraction. The results were as shown in Table-2. The lattice constants as a hexagonal crystal system were a=3.307±0.001 (Å) and c=72.01±0.01 (Å). The above lattice constants and the surface index (hkl) in Table 2
The calculated interplanar spacing (d c (Å)) agreed extremely well with the actually measured interplanar spacing (d p (Å)). Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
Claims (1)
を有する化合物。 2 金属ルテチウムあるいは酸化ルテチウムもし
くは加熱により酸化ルテチウムに分解される化合
物と、金属ガリウムあるいは酸化ガリウムもしく
は加熱により酸化ガリウムに分解される化合物
と、金属亜鉛あるいは酸化亜鉛もしくは加熱によ
り酸化亜鉛に分解される化合物とを、Lu、Gaお
よびZnの割合が原子比で1対1対7の割合で混
合し、該混合物を600℃以上の温度で大気中、酸
化性雰囲気中あるいはLuおよびGaが各々3価イ
オン状態、Znが2価イオン状態より還元されな
い還元雰囲気中で加熱することを特徴とする
LuGaZn7O10で示される六方晶系の層状構造を有
する化合物の製造法。[Claims] 1. A compound having a hexagonal layered structure represented by LuGaZn 7 O 10 . 2 Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating; and Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating. and Lu, Ga, and Zn in an atomic ratio of 1:1:7, and the mixture is heated at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or with trivalent ions of Lu and Ga, respectively. state, characterized by heating in a reducing atmosphere in which Zn is less reduced than the divalent ion state.
A method for producing a compound having a hexagonal layered structure represented by LuGaZn 7 O 10 .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10952687A JPS63274622A (en) | 1987-05-01 | 1987-05-01 | Compound having hexagonal laminar structure expressed by lugazn7o10 and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10952687A JPS63274622A (en) | 1987-05-01 | 1987-05-01 | Compound having hexagonal laminar structure expressed by lugazn7o10 and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63274622A JPS63274622A (en) | 1988-11-11 |
JPH0314779B2 true JPH0314779B2 (en) | 1991-02-27 |
Family
ID=14512494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10952687A Granted JPS63274622A (en) | 1987-05-01 | 1987-05-01 | Compound having hexagonal laminar structure expressed by lugazn7o10 and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63274622A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3738109A1 (en) * | 1987-11-10 | 1989-05-18 | Bayer Ag | MIXTURES OF POLYCARBONATES WITH SILOXANE-Grafted Polymers |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS606889A (en) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | Manufactur of scintillation type detector for x-ray ct device |
-
1987
- 1987-05-01 JP JP10952687A patent/JPS63274622A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS606889A (en) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | Manufactur of scintillation type detector for x-ray ct device |
Also Published As
Publication number | Publication date |
---|---|
JPS63274622A (en) | 1988-11-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |