JPS63190715A - Compound having hexagonal laminated structure expressed by scgazn2o5 and its production - Google Patents
Compound having hexagonal laminated structure expressed by scgazn2o5 and its productionInfo
- Publication number
- JPS63190715A JPS63190715A JP2156087A JP2156087A JPS63190715A JP S63190715 A JPS63190715 A JP S63190715A JP 2156087 A JP2156087 A JP 2156087A JP 2156087 A JP2156087 A JP 2156087A JP S63190715 A JPS63190715 A JP S63190715A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- oxide
- heated
- mixture
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- -1 Scandium metal Chemical class 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 3
- 239000007858 starting material Substances 0.000 abstract description 3
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料および触媒材料として
有用な新規化合物である５ｃＧａＺｎｚＯｓで示される
六方晶系の層状構造を有する化合物およびその製造法に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by 5cGaZnzOs, which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and a method for producing the same.
従来技術
従来、（Ｙｂ”Ｆｅ”０．） 、Ｆｅ”Ｏ（ｎは整数を
示す）で示される六方晶系の層状構造を有する化合物は
本出願人によって合成され知られている。Prior Art Conventionally, compounds having a hexagonal layered structure represented by (Yb"Fe"0.) and Fe"O (n is an integer) have been synthesized by the present applicant and are known.
ＹｂＦｅｔ０４ ｔＹｂｔＦ１３ｚｏｔ、ＹｂＪｅ４０
＋ｏ及びＹｂ４ＦｅｓＯ＋ｓの六方晶系としての格子定
数、ＹｂＱ、、、層、ＦｅＯ，，５層、 ＦｅｔＯｔ、
ｓ ＩＮの単位格子内における層数を示する層状構造を
持つ化合物である。YbFet04 tYbtF13zot, YbJe40
+o and Yb4FesO+s lattice constant as a hexagonal system, YbQ, , layer, FeO,, 5 layers, FetOt,
s It is a compound with a layered structure indicating the number of layers in the unit cell of IN.
発明の目的
本発明は（ＹｂＦｅＯａ） １ｌＦｅＯの化学式におい
て、ｎ＝２に相当し、Ｙｂ３＋の代わりにＳｃ”を、ｐ
ｅ ３ ＊の代わりにＧａ”を、Ｆｅｚ′″の代わり
にＺｎ”を置きかえて得られた新規な化合物を提供する
にある。Purpose of the Invention The present invention provides (YbFeOa) In the chemical formula of
The object of the present invention is to provide a novel compound obtained by replacing e 3 * with Ga" and replacing Fez'" with Zn".
発明の構成
本発明の５ｃＧａＺｎｚＯｓで示される化合物は、イオ
ン結晶モデルではＳｃ ３ ゛（Ｇａ１ ＋ 、 ｚ
ｎ ２ ”″）Ｚｎ”Ｏｓ”−とじて記載され、その構
造はＳｃＯ＋、ｓ層、（Ｇａ”“。Structure of the Invention The compound represented by 5cGaZnzOs of the present invention has Sc 3 ゛ (Ga 1 + , z
n 2 "")Zn"Os"-, its structure is ScO+, s layer, (Ga"").
Ｚｎ”″）（ｈ、ｓ層およびＺｎＯ層の積層によって形
成されており、著しい構造異方性を持つことがその特徴
の一つである。Ｚｎ”＋イオンの半数はＧａ”と共に（
Ｇａ” 、 Ｚｎ” ＞０１．Ｓ層を作り、残りの半数
はＺｎＯ層を作っている。六方晶系としての格子定数は
次の通りである。Zn"") (It is formed by stacking h, s layers and ZnO layers, and one of its characteristics is that it has remarkable structural anisotropy. Half of the Zn"+ ions are formed by Ga" (
Ga", Zn">01. The S layer is made, and the remaining half is a ZnO layer. The lattice constants as a hexagonal crystal system are as follows.
ａ ＝３．２６２ ± ０．００１ （人）ｃ ＝
２２．５０ ± ０．０１ （人）この化合物の
面指数（ｈｋＡ）、面間隔（ｄ（人））（ｄ、は実測値
、ｄｃは計算値を示す）およびＸ線に対する相対反射強
度（１％）を示すと、表−２の通りである。a = 3.262 ± 0.001 (person) c =
22.50 ± 0.01 (person) Planar index (hkA), interplanar spacing (d (person)) (d is the measured value, dc is the calculated value) and relative reflection intensity for X-rays (1 %) is shown in Table 2.
この化合物は光機能材料、半導体材料、触媒材料等に有
用なものである。This compound is useful for optical functional materials, semiconductor materials, catalyst materials, etc.
この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.
金属スカンジウムあるいは酸化スカンジウムもしくは加
熱により酸化スカンジウムに分解される化合物と、金属
ガリウムあるいは酸化ガリウムもしくは加熱により酸化
ガリウムに分解される化合物と、金属亜鉛あるいは酸化
亜鉛もしくは加熱により酸化亜鉛に分解される化合物と
を、Ｓｃ、 ＧａおよびＺｎの割合が原子比で１対１対
２０割合で混合し、該混合物を６００℃以上の温度で、
大気中、酸化性雰囲気中あるいはＳｃおよびＧａが各々
３価イオン状態、Ｚｎが２価イオン状態より還元されな
い還元雰囲気中で加熱することによって製造し得られる
。Scandium metal or scandium oxide or a compound that decomposes into scandium oxide when heated; gallium metal or gallium oxide or a compound that decomposes into gallium oxide when heated; and zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. are mixed at an atomic ratio of Sc, Ga and Zn of 1:1:20, and the mixture is heated at a temperature of 600°C or higher,
It can be produced by heating in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Sc and Ga are not reduced to a trivalent ion state, and Zn is not reduced to a divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に１０μｍ以下であることが好
ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size, particularly preferably 10 μm or less.
また、光機能材料、半導体材料として用いる場合には不
純物の混入をきらうので、純度の高いことが好ましい。Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided.
出発物質が加熱により金属酸化物を得る化合物としては
、それぞれの金属の水酸化物、炭酸塩、硝酸塩等が挙げ
られる。Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Ｓｃ、 Ｇａ、及びＺｎの割合が原
子比で１対１対２の割合であることが必要である。The mixing ratio of the raw materials must be such that the atomic ratio of Sc, Ga, and Zn is 1:1:2.
これをはずすと目的とする化合物の単−相を得ることが
できない。If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはＳｃおよ
びＧａが各々３価イオン状態、Ｚｎが２価イオン状態か
ら還元されない還元雰囲気中で６００℃以上のもとで加
熱する。加熱時間は数時間もしくはそれ以上である。加
熱の際の昇温速度には制約はない、加熱終了後急冷する
か、あるいは大気中に急激に引き出せばよい。This mixture is heated at 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Sc and Ga are not reduced from their respective trivalent ion states and Zn from their divalent ion state. Heating time is several hours or more. There is no restriction on the rate of temperature increase during heating; it is sufficient to rapidly cool the material after heating or to rapidly draw it out into the atmosphere.
得られた５ｃＧａＺｎｚＯｓ化合物の粉末は無色であり
、粉末ＸｖＡ回折法によって結晶構造を有することが分
かった。その結晶構造は層状構造であり、ＳｃＯ＋、ｓ
層、 （Ｇａ、 Ｚｎ）Ｏｚ、ｓ層、およびＺｎＯ層の
積み重ねによって形成されていることが分かった。The obtained powder of 5cGaZnzOs compound was colorless and was found to have a crystal structure by powder XvA diffraction method. Its crystal structure is a layered structure, with ScO+, s
It was found that it is formed by stacking layers, (Ga, Zn)Oz, s-layer, and ZnO layer.
実施例
純度９９．９９％以上の酸化スカンジウム（Ｓｃｉ（ｈ
）粉末、純度９９．９９％以上の酸化ガリウム（Ｇａ＊
Ｏ：＋）粉末、および試薬特級の酸化亜鉛（ＺｎＯ）粉
末をモル比でｌ対１対４の割合に秤量し、めのう乳鉢内
でエタノールを加えて、約３０分間部合し、平均粒径数
μｍの微粉末混合物を得た。該混合物を白金管内に封入
し、１３００℃に設定された管状シリコニット炉内に入
れ３日間加熱し、その後、試料を炉外にとりだし室温ま
で急速に冷却した。得られた試料は５ｃＧａＺｎｔＯｓ
単−相であり、粉末ｘ′４１Ａ回折法によって面指数（
ｈｋｌ）、面間隔（ｄｏ）および相対反射強度（１％）
を測定した。その結果は表−２の通りであった。Examples Scandium oxide (Sci(h) with a purity of 99.99% or more
) powder, gallium oxide (Ga*) with a purity of 99.99% or more
O:+) powder and reagent grade zinc oxide (ZnO) powder were weighed at a molar ratio of 1:1:4, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to determine the average particle size. A fine powder mixture of several micrometers was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1300° C., and heated for 3 days, and then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was 5cGaZntOs
It is single-phase, and the surface index (
hkl), interplanar spacing (do) and relative reflection intensity (1%)
was measured. The results were as shown in Table-2.
六方晶系としての格子定数は
ａ −３，２６２±０．００１ （人）ｃ ＝２２．５
０ ±ｏ、ｏｉ ＜人）であった。The lattice constant as a hexagonal crystal system is a −3,262±0.001 (person) c = 22.5
0 ± o, oi < person).
上記の格子定数および表−２の面指数（ｌｔｋｆｆｉ）
より算出した面間隔（ｄｃ（人））は、実測の面間隔（
ｄ。The above lattice constant and the planar index (ltkffi) in Table 2
The surface spacing (dc (person)) calculated from the actual surface spacing (dc (person)) is
d.
（人））と極めてよく一致した。There was a very good agreement with (person).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供した優れた効果を有する。Effects of the Invention The present invention has the excellent effect of providing a novel compound useful as an optical functional material, a semiconductor material, and a catalyst.
特許出願人 科学技術庁無機材質研究所長潮 高
信 雄
手続補正書
ｌ 事件の表示
昭和６２年特許願第０２１５６０号
化合物およびその１造法
３ 補正をする者
事件との関係 特許出願人
住所 茨城県新治郡桜村並木１丁目１番地自発矯正
５ 補正の対象
←）明細書第１０頁４行から５行「て有用な・・・・効
果を有する。」を「て有用な新規化合物を提供する。」
と訂正する。Patent applicant Takashi Nagashio, Institute of Inorganic Materials, Science and Technology Agency
Nobuyoshi Procedural Amendment 1 Indication of the case 1986 Patent Application No. 021560 Compound and its 1 Manufacturing Method 3 Person making the amendment Relationship to the case Patent Applicant Address 1-1 Namiki, Sakuramura, Niihari-gun, Ibaraki Prefecture Voluntary Correction 5 Amendment ←) On page 10 of the specification, lines 4 to 5, “Have a useful...effect” has been changed to “Provide a new compound that is useful.”
I am corrected.
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by ScGaZn_2O_5.
くは加熱により酸化スカンジウムに分解される化合物と
、金属ガリウムあるいは酸化ガリウムもしくは加熱によ
り酸化ガリウムに分解される化合物と、金属亜鉛あるい
は酸化亜鉛もしくは加熱により酸化亜鉛に分解される化
合物とを、Ｓｃ、ＧａおよびＺｎの割合が原子比で１対
１対２の割合で混合し、該混合物を６００℃以上の温度
で、大気中、酸化性雰囲気中あるいはＳｃおよびＧａが
各々３価イオン状態、Ｚｎが２価イオン状態より還元さ
れない還元雰囲気中で加熱することを特徴とするＳｃＧ
ａＺｎ＿２Ｏ＿５で示される六方晶系の層状構造を有す
る化合物の製造法。(2) Scandium metal or scandium oxide or a compound that decomposes into scandium oxide when heated; gallium metal or gallium oxide or a compound that decomposes into gallium oxide when heated; and zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. Sc, Ga, and Zn are mixed in an atomic ratio of 1:1:2, and the mixture is heated at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or when Sc and Ga are ScG characterized by heating in a reducing atmosphere in which the trivalent ion state and Zn are less reduced than the divalent ion state
A method for producing a compound having a hexagonal layered structure represented by aZn_2O_5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2156087A JPH0244247B2 (en) | 1987-01-30 | 1987-01-30 | SCGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2156087A JPH0244247B2 (en) | 1987-01-30 | 1987-01-30 | SCGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63190715A true JPS63190715A (en) | 1988-08-08 |
| JPH0244247B2 JPH0244247B2 (en) | 1990-10-03 |
Family
ID=12058397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2156087A Expired - Lifetime JPH0244247B2 (en) | 1987-01-30 | 1987-01-30 | SCGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244247B2 (en) |
-
1987
- 1987-01-30 JP JP2156087A patent/JPH0244247B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0244247B2 (en) | 1990-10-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |