JPS63256521A - Compound having hexagonal layer structure represented by inalzn4o7 and production thereof - Google Patents
Compound having hexagonal layer structure represented by inalzn4o7 and production thereofInfo
- Publication number
- JPS63256521A JPS63256521A JP9256687A JP9256687A JPS63256521A JP S63256521 A JPS63256521 A JP S63256521A JP 9256687 A JP9256687 A JP 9256687A JP 9256687 A JP9256687 A JP 9256687A JP S63256521 A JPS63256521 A JP S63256521A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- oxide
- indium
- aluminum
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011701 zinc Substances 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 239000011787 zinc oxide Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料等として有用な新規化
合物であるＩｎＡｌＺｎ４０７で示される六方晶系の層
状構造を有する化合物及びその製造法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by InAlZn407, which is a new compound useful as an optical functional material, a semiconductor material, etc., and a method for producing the same.
従来技術
従来、（Ｙｂ”Ｆｅ”０３）ｎ Ｆｅ”０（ｎは整数を
表わす）で示される六方晶系の層状構造を有する化合物
は、本出願人によって合成され、知られている。Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb"Fe"03)n Fe"0 (n represents an integer) was synthesized by the present applicant and is known.
ＹｂＰｅｚ０４． Ｙｂ４ＦｅｓＯ＋、 Ｙｂ３Ｆｅｔ
Ｏ＋ｏ及びＹｂ４ＦｅｓＯ＋：＋の六方晶系としての格
子定数、ＹｂＯ＋、 ５１１ 、 Ｆｅｄ、 ５層、
Ｆｅ２Ｏ□、３層の単位格子内における層数を示すと表
−１の通りである。YbPez04. Yb4FesO+, Yb3Fet
O+o and Yb4FesO+: + lattice constant as hexagonal system, YbO+, 511, Fed, 5 layers,
Table 1 shows the number of layers in a three-layer unit cell of Fe2O□.
これらの化合物は酸化鉄（Ｆｅｄ） １モルに対して
ＹｂＦｅＯ３がｎ （ｎ＝１．２．３・”）モルの割合
で化合していると考えられる層状構造を持つ化合物であ
る。These compounds have a layered structure in which YbFeO3 is combined at a ratio of n (n=1.2.3·'') moles to 1 mole of iron oxide (Fed).
発明の目的
本発明は（ＹｂＦｅＯｓ）、１ＦｅＯの化学式において
、ｎ＝１７４に相当し、Ｙｂ”の代わりにＩｎｆｆ＋を
、Ｆｅ３＋の代わりにＡ１３゛を、Ｆｅ”の代わりにＺ
ｎ”を置きかえた新規な化合物を提供するにある。Object of the Invention The present invention relates to (YbFeOs), which corresponds to n=174 in the chemical formula of 1FeO, with Inff+ instead of Yb'', A13'' instead of Fe3+, and Z instead of Fe''.
The object of the present invention is to provide a novel compound in which n'' is replaced.
発明の構成
本発明の化合物はＩｎＡｌＺｎ４０７で示される化合物
は、イオン結晶モデルではＩｎ” （Ａｌ” Ｚｎ”
）Ｚｎ、”０１”−として記述され、その構造は、Ｉｎ
Ｏ＋、ｓ層、（ＡＩ 、 Ｚｎ）Ｏｚ、ｓ層及びＺｎＯ
層の積層によって形成されており、著しい構造異方性を
持つことがその特徴の一つである。Ｚｎ”＋はイオンの
１７４はＡｌ”と共に（ＡＩ、 Ｚｎ）Ｏｚ、ｓ層を作
り、残りの３７４はＺｎＯ層を作っている。六方晶系と
しての格子定数は以下の通りである。Structure of the Invention The compound of the present invention is InAlZn407, which is In"(Al"Zn") in the ionic crystal model.
) Zn, “01”-, and its structure is In
O+, s-layer, (AI, Zn)Oz, s-layer and ZnO
It is formed by laminating layers, and one of its characteristics is that it has significant structural anisotropy. 174 of the Zn''+ ions form the (AI, Zn)Oz, s layer together with Al'', and the remaining 374 form the ZnO layer. The lattice constants as a hexagonal crystal system are as follows.
ａ ＝３．２７７ ±０．００１ （人）ｃ ＝３２
．７２ ±０．０１ （人）この化合物の面指数＜
ｈ ｋ Ａ）、面間隔（ｄ（人））（ｄ、は実測値＋
ｄＣは計算値を示す）およびＸ線に対する相対反射強度
（１％）を表−２に示す。a = 3.277 ±0.001 (person) c = 32
．． 72 ±0.01 (person) Surface index of this compound <
h k A), distance between surfaces (d (person)) (d is actual measurement value +
dC indicates a calculated value) and the relative reflection intensity (1%) for X-rays are shown in Table 2.
この化合物は光機能材料、半導体材料、触媒材料として
有用なものである。This compound is useful as an optical functional material, a semiconductor material, and a catalyst material.
この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.
金属インジウムあるいは酸化インジウムもしくは加熱に
より酸化インジウムに分解される化合物と、金属アルミ
ニウムあるいは酸化アルミニウムもしくは加熱により酸
化アルミニウムに分解される化合物と、金属亜鉛あるい
は酸化亜鉛もしくは加熱により酸化亜鉛に分解される化
合物とを、インジウム、アルミニウム及び亜鉛の割合が
原子比で１対１対４になるように混合して、該混合物を
６００℃以上のもとで、大気中、酸化性雰囲気中あるい
はインジウム及びアルミニウムが各々３価イオン状態、
亜鉛が２価イオン状態より還元されない程度の還元雰囲
気中で加熱することにより製造し得られる。Metal indium or indium oxide or a compound that decomposes into indium oxide when heated; metal aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; and metal zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. are mixed so that the ratio of indium, aluminum and zinc is 1:1:4 in atomic ratio, and the mixture is heated at 600°C or higher in air, an oxidizing atmosphere, or indium and aluminum, respectively. Trivalent ion state,
It can be produced by heating in a reducing atmosphere to the extent that zinc is not reduced beyond the divalent ion state.
本発明に用いる出発物質は市販の物をそのまま使用して
もよいが、化学反応を速やかに進行させるためには粒径
が小さい方がよく、特に１０μｍ以下であることが好ま
しい。また光機能材料、半導体材料として用いる場合に
は不純物の混入をきらうので、純度の高いことが好まし
い。この原料をそのままあるいはアルコール類もしくは
アセトンと共に充分混合する。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, the particle size is preferably small, particularly preferably 10 μm or less. Furthermore, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided. This raw material is thoroughly mixed as it is or with an alcohol or acetone.
これらの混合割合は、Ｉｎ、 Ａ１．及びＺｎの割合が
原子比で１対１対４の割合である。この割合がはずれる
と目的とする化合物の単−相が得られない。These mixing ratios are In, A1. The ratio of Zn and Zn is 1:1:4 in atomic ratio. If this ratio is off, a single phase of the target compound cannot be obtained.
この混合物を大気中あるいは酸化性雰囲気中もしくはＩ
ｎ及びＡｌが各々３価イオン状態、 Ｚｎが２価イオン
状態から還元され得ない程度の還元雰囲気中で６００℃
以上で加熱する。加熱時間は数時間もしくはそれ以上で
ある。加熱の際の昇温速度に制約はない。加熱終了後Ｏ
℃に急冷するかあるいは大気中に急激に引き出せばよい
。得られた化合物の粉末は無色で、粉末Ｘ線回折法によ
ると結晶構造を有することがわかった。その結晶構造は
層状構造であり、ＩｎＯ＋、ｓ層ｒ （ＡＩ＋Ｚｎ）Ｏ
ｘ、 ｓ層、及びＺｎＯ層の積み重ねによって形成され
ている。This mixture is stored in the air or in an oxidizing atmosphere or in an I
At 600°C in a reducing atmosphere where n and Al are each in a trivalent ion state, and Zn cannot be reduced from a divalent ion state.
Heat above. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. O after heating
It can be rapidly cooled to ℃ or rapidly drawn out into the atmosphere. The powder of the obtained compound was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is a layered structure, with InO+, s layer r (AI+Zn)O
It is formed by stacking x, s layers, and ZnO layers.
実施例
純度９９．９９％以上の酸化インジウム（Ｉｎｚ０３）
粉末、 Ｍ度９９．９％以上の酸化アルミニウム（Ａｈ
Ｏ＋）粉末、および試薬特級の酸化亜鉛（ＺｎＯ）粉末
をモル比でｌ対１対８の割合に秤量し、めのう乳鉢内で
エタノールを加えて、約３０分間混合し、平均粒径数μ
ｍの微粉状混合物を得た。該混合物を白金管内に封入し
、１４５０℃に設定された管状シリコニット炉内に入れ
４日間加熱し、その後、試料を炉外にとりだし、室温ま
で急速に冷却した。得られた試料はＩｎＡｌＺｎ４Ｏ７
の単−相であり、粉末Ｘ線回折法によって、各反射の面
間隔（ｄｏ）及び相対反射強度を測定した結果は表−２
の通りであった。Example Indium oxide (Inz03) with a purity of 99.99% or more
Powder, aluminum oxide (Ah
Weigh O+) powder and reagent grade zinc oxide (ZnO) powder at a molar ratio of 1:1:8, add ethanol in an agate mortar, and mix for about 30 minutes until the average particle size is several microns.
A fine powder mixture of m was obtained. The mixture was sealed in a platinum tube, placed in a tubular silicone furnace set at 1450° C., and heated for 4 days, and then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was InAlZn4O7
Table 2 shows the results of measuring the interplanar spacing (do) and relative reflection intensity of each reflection using powder X-ray diffraction method.
It was as follows.
六方晶系としての格子定数は、
ａ ＝３．２７７ ±０．００１ （人）ｃ ＝３２
．７２ ±０．０１ Ｃ人）であった。The lattice constant as a hexagonal system is a = 3.277 ±0.001 (person) c = 32
．． 72 ± 0.01 C people).
上記の格子定数および表−２の面指数（ｈｋβ）より算
出した面間隔（ｄｃ（人））は、実測の面間隔（ｄ。The interplanar spacing (dc (people)) calculated from the above lattice constant and the planar index (hkβ) in Table 2 is the actually measured interplanar spacing (d).
（人））と極めてよく一致している。(person)).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供する。Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by InAlZn_4O_7.
加熱により酸化インジウムに分解される化合物と、金属
アルミニウムあるいは酸化アルミニウムもしくは加熱に
より酸化アルミニウムに分解される化合物と、金属亜鉛
あるいは酸化亜鉛もしくは加熱により酸化亜鉛に分解さ
れる化合物とを、インジウム、アルミニウム及び亜鉛の
割合が原子比で１対１対４になるように混合して、該混
合物を６００℃以上のもとで、大気中、酸化性雰囲気中
あるいはインジウム及びアルミニウムが各々３価イオン
状態、亜鉛が２価イオン状態より還元されない程度の還
元雰囲気中で加熱することを特徴とするＩｎＡｌＺｎ＿
４Ｏ＿７で示される六方晶系の層状構造を有する化合物
の製造法。(2) Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; and Metallic indium or zinc oxide or a compound that decomposes into zinc oxide when heated. Indium, aluminum, and zinc are mixed in an atomic ratio of 1:1:4, and the mixture is heated at 600°C or higher in the air, an oxidizing atmosphere, or in an oxidizing atmosphere. InAlZn_, which is characterized by heating in a reducing atmosphere to the extent that aluminum is not reduced to a trivalent ion state and zinc is not reduced to a divalent ion state.
A method for producing a compound having a hexagonal layered structure represented by 4O_7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9256687A JPH0246526B2 (en) | 1987-04-15 | 1987-04-15 | INALZN4O7DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9256687A JPH0246526B2 (en) | 1987-04-15 | 1987-04-15 | INALZN4O7DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63256521A true JPS63256521A (en) | 1988-10-24 |
| JPH0246526B2 JPH0246526B2 (en) | 1990-10-16 |
Family
ID=14057975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9256687A Expired - Lifetime JPH0246526B2 (en) | 1987-04-15 | 1987-04-15 | INALZN4O7DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0246526B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014047407A (en) * | 2012-08-31 | 2014-03-17 | Idemitsu Kosan Co Ltd | Sputtering target |
-
1987
- 1987-04-15 JP JP9256687A patent/JPH0246526B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014047407A (en) * | 2012-08-31 | 2014-03-17 | Idemitsu Kosan Co Ltd | Sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0246526B2 (en) | 1990-10-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |