JPH0246526B2 - INALZN4O7DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO - Google Patents

Description

[Detailed description of the invention]

INDUSTRIAL APPLICATION FIELD The present invention relates to a compound having a hexagonal layered structure represented by InAlZn ₄ O ₇ , which is a new compound useful as an optical functional material, a semiconductor material, etc., and a method for producing the same. Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb ³⁺ Fe ³⁺ O ₃ ) _o Fe ²⁺ O (n represents an integer) was synthesized by the applicant and known. It is being YbFe ₂ O ₄ , Yb ₂ Fe ₃ O ₇ , Yb ₃ Fe ₄ O ₁₀ and
Lattice constant of Yb ₄ Fe ₅ O ₁₃ as hexagonal system, YbO _1.5
Table 1 shows the number of layers in the unit cell, FeO _1.5 layer, and Fe ₂ O _2.5 layer.

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[Table] These compounds have a layered structure in which YbFeO ₃ is thought to be combined at a ratio of n moles (n = 1, 2, 3...) to 1 mole of iron oxide (FeO). . Purpose of the Invention The present invention relates to the chemical formula of (YbFeO ₃ ) _o FeO,
Corresponds to n = 1/4, In ³⁺ instead of Yb ³⁺ , Fe ³⁺
The object of the present invention is to provide a novel compound in which Al ³⁺ is substituted for Fe ²⁺ and Zn ²⁺ is substituted for Fe 2+ . Structure of the Invention The compound of the present invention is InAlZn ₄ O ₇ In the ionic crystal model, the compound is In ³⁺ (Al ³⁺ , Zn ²⁺ )
Described as Zn ₃ ²⁺ O ₇ ^2- , its structure is InO _1.5
It is formed by laminating layers, (Al, Zn)O _2.5 layers, and ZnO layers, and one of its characteristics is that it has significant structural anisotropy. Zn ²⁺ is 1/4 of the ions
Make (Al, Zn)O _2.5 layer with Al ³⁺ and the remaining 3/4
is making a ZnO layer. The lattice constants as a hexagonal crystal system are as follows. a=3.277±0.001 (Å) c=32.72±0.01 (Å) Planar index (hkl), interplanar spacing (d (Å)) of this compound
(d _p is an actual measured value, d _c is a calculated value) and the relative reflection intensity (I%) for X-rays are shown in Table 2. This compound is useful as an optical functional material, a semiconductor material, and a catalyst material.

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[Table] This compound can be produced by the following method. Metal indium or indium oxide or a compound that decomposes into indium oxide when heated; metal aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; and metal zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. are mixed so that the ratio of indium, aluminum and zinc is 1:1:4 in atomic ratio, and the mixture is
It can be produced by heating at 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere to the extent that indium and aluminum are not reduced to a trivalent ion state, and zinc is not reduced to a divalent ion state. Commercially available starting materials for use in the present invention may be used as they are, but in order for the chemical reaction to proceed quickly, the particle size is preferably small, particularly preferably 10 μm or less. Furthermore, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided. This raw material is thoroughly mixed as it is or with an alcohol or acetone. The mixing ratio of these is such that the atomic ratio of In, Al, and Zn is 1:1:4. If this ratio is off, a single phase of the target compound cannot be obtained. This mixture is heated at 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere such that In and Al cannot be reduced from the trivalent ion state and Zn from the divalent ion state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The powder of the obtained compound was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is a layered structure, with _1.5 layers of InO, _2.5 layers of (Al, Zn)O,
It is formed by stacking ZnO and ZnO layers. Examples Indium oxide (In ₂ O ₃ ) powder with a purity of 99.99% or more, aluminum oxide (Al ₂ O ₃ ) with a purity of 99.9% or more
Powder and reagent-grade zinc oxide (ZnO) powder were weighed at a molar ratio of 1:1:8, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to form a fine powder with an average particle size of several μm. A mixture was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1450°C, and heated for 4 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was a single phase of InAlZn ₄ O ₇ , and the results of measuring the interplanar spacing (d _p ) and relative reflection intensity of each reflection using powder X-ray diffraction method are shown in Table 2. Ta. The lattice constants as a hexagonal crystal system were a=3.277±0.001 (Å) and c=32.72±0.01 (Å). The above lattice constants and the surface index (hkl) in Table 2
The calculated interplanar spacing (d _c (Å)) is in extremely good agreement with the actually measured interplanar spacing (d _p (Å)). Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.

Claims (1)

[Claims] 1. A compound having a hexagonal layered structure represented by InAlZn ₄ O ₇ . 2 Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. and,
Indium, aluminum, and zinc are mixed in an atomic ratio of 1:1:4, and the mixture is heated at 600°C or higher in the air, in an oxidizing atmosphere, or when indium and aluminum are each trivalent. 1. A method for producing a compound having a hexagonal layered structure represented by InAlZn ₄ O ₇ , which comprises heating in a reducing atmosphere to the extent that zinc in an ionic state is not reduced more than in a divalent ion state.