JPH0244242B2 - INALZNMGO5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO - Google Patents

Description

[Detailed description of the invention]

INDUSTRIAL APPLICATION FIELD The present invention relates to a compound having a hexagonal layered structure represented by InAlZnMgO ₅ , which is a new compound useful as an optical functional material, a semiconductor material, etc., and a method for producing the same. Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb ³⁺ Fe ³⁺ O ₃ ) _o Fe ²⁺ O (n represents an integer) was synthesized by the applicant and known. It is being YbFe ₂ O ₄ , Yb ₂ Fe ₃ O ₇ , Yb ₃ Fe ₄ O ₁₀ and
Lattice constant of Yb ₄ Fe ₅ O ₁₃ as hexagonal system, YbO _1.5
Table 1 shows the number of layers in the unit cell: FeO _1.5 layer, Fe ₂ O _2.5 layer.

[Table] These compounds have a layered structure in which YbFeO ₃ is combined at a ratio of n (n = 1, 2, 3,...) moles per 1 mole of iron oxide (FeO). . Purpose of the Invention The present invention relates to the chemical formula of (YbFeO ₃ ) _o FeO,
Corresponds to n = 1/2, In ³⁺ instead of Yb ³⁺ , Fe ³⁺
Al ³⁺ instead of Fe ²⁺ (Zn ²⁺ +
The purpose of the present invention is to provide a novel compound that replaces Mg ²⁺ ). Structure of the Invention The compound of the present invention is InAlZnMgO ₅ In the ionic crystal model, In ³⁺ (Al ³⁺ Zn ²⁺ )
Described as Mg ²⁺ O ₅ ^2- , its structure is InO _1.5
It is formed by laminating layers, (Al, Zn)O _2.5 layers, and MgO layers, and one of its characteristics is that it has significant structural anisotropy. Zn ²⁺ together with Al ³⁺ (Al,
Zn)O forms _{the 2.5} layer, and Mg2 ⁺ forms the MgO layer. The lattice constants as a hexagonal crystal system are as follows. a = 3.287 ± 0.001 (Å) c = 22.15 ± 0.01 (Å) Planar index (hkl), interplanar spacing (d (Å)) of this compound
[d _p is an actual measurement value, d _c is a calculated value] and the relative reflection intensity (I%) for X-rays are shown in Table 2. This compound is useful as an optical functional material, a semiconductor material, and a catalyst material.

【table】

[Table] This compound can be produced by the following method. Indium metal or indium oxide or a compound that decomposes into indium oxide when heated; aluminum metal or aluminum oxide or a compound that decomposes into aluminum oxide when heated; zinc metal or zinc oxide or a compound that turns into zinc oxide when heated; Magnesium or magnesium oxide or a compound that is decomposed into magnesium oxide by heating,
Indium, aluminum, zinc, and magnesium are mixed in an atomic ratio of 1:1:1:1, and the mixture is stored in the air, in an oxidizing atmosphere, or indium and aluminum at a temperature of 600°C or higher. are each in a trivalent ion state, and zinc and magnesium can be produced by heating in a reducing atmosphere to the extent that they are not reduced more than in a divalent ion state. Commercially available starting materials for use in the present invention may be used as they are, but in order for the chemical reaction to proceed quickly, the particle size is preferably small, particularly preferably 10 μm or less. Furthermore, when used as an optical functional material or a semiconductor material, it is preferable to use a material with high purity since contamination with impurities is avoided. This raw material is thoroughly mixed as it is or with an alcohol or acetone. The mixing ratio of these is such that the atomic ratio of In, Al, Zn, and Mg is 1:1:1:1. If this ratio is off, a single phase of the target compound cannot be obtained. This mixture is stored in the air or in an oxidizing atmosphere, or when In and Al are each in a trivalent ion state,
Heating is performed at 600° C. or higher in a reducing atmosphere that prevents Zn and Mg from being reduced from the divalent ion state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The powder of the obtained compound was colorless and was found to have a crystalline structure by powder X-ray diffraction.
Its crystal structure is a layered structure, with _1.5 layers of InO, (Al,
It is formed by stacking Zn)O _2.5 layer and MgO layer. Example Indium (In ₂ O ₃ ) powder with a purity of 99.99% or more,
Aluminum oxide (Al ₂ O ₃ ) powder with a purity of 99.9% or higher, and reagent-grade zinc oxide (ZnO) and magnesium oxide (MgO) powder were weighed in a molar ratio of 1:1:2:2 and placed in an agate mortar. Ethanol was added thereto and mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μm. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1300°C, and heated for 3 days, then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was
It was a single phase of InAlZnMgO ₅ , and the interplanar spacing (d _p ) and relative reflection intensity of each reflection were measured by powder X-ray diffraction method, and the results were as shown in Table 2. The lattice constants as a hexagonal crystal system were a=3.287±0.001 (Å) and c=22.15±0.01 (Å). The above lattice constants and the surface index (hkl) in Table 2
The calculated interplanar spacing (d _c (Å)) is in extremely good agreement with the actually measured interplanar spacing (d _p (Å)). Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.

Claims (1)

[Claims] 1. A compound having a hexagonal layered structure represented by InAlZnMgO ₅ . 2 Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. and magnesium metal, magnesium oxide, or a compound decomposed into magnesium oxide by heating, such that the atomic ratio of indium, aluminum, zinc, and magnesium is 1:1:1:1, and the mixture is prepared. is heated at 600°C or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere to the extent that indium and aluminum are not reduced to a trivalent ion state, and zinc and magnesium are not reduced to a divalent ion state. A method for producing a compound having a hexagonal layered structure represented by InAlZnMgO ₅ .