JPS63195121A - Compound having hexagonal laminar structure expressed by inalznmgo5 and production thereof - Google Patents
Compound having hexagonal laminar structure expressed by inalznmgo5 and production thereofInfo
- Publication number
- JPS63195121A JPS63195121A JP2920187A JP2920187A JPS63195121A JP S63195121 A JPS63195121 A JP S63195121A JP 2920187 A JP2920187 A JP 2920187A JP 2920187 A JP2920187 A JP 2920187A JP S63195121 A JPS63195121 A JP S63195121A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- oxide
- atmosphere
- indium
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 12
- 239000000843 powder Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料等として有用な新規化
合物であるｆｎＡＩＺｎＭｇ０５で示される六方晶系の
層状構造を有する化合物及びその製造法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by fnAIZnMg05, which is a new compound useful as an optical functional material, a semiconductor material, etc., and a method for producing the same.
従来技術
従来、（Ｙｂ”Ｆｅ”０．） 、ＩＦｅ”０（ｎは整数
を表わす）で示される六方晶系の層状構造を有する化合
物は、木出廓人によって合成され、知られている。BACKGROUND ART Conventionally, compounds having a hexagonal layered structure represented by (Yb"Fe"0.) and IFe"0 (n represents an integer) were synthesized by Kidehito and are known.
ＹｂＰｅｚＯｎ ＋ＹｂｔＦｅ＊Ｏｙ、Ｙｂ３Ｆｅ４０
＋ｏ及びＹｂａＦｅｓＯ＋＋の六方晶系としての格子定
数、 ＹｂＯ＋、ｓ層ｌＦｅ０＋、ｓ層、 ＦｅｚＯｚ
、ｓ層の単位格子内における層数を示すと表−１の通り
である。YbPezOn +YbtFe*Oy, Yb3Fe40
+o and YbaFesO++ lattice constant as hexagonal system, YbO+, s layer lFe0+, s layer, FezOz
, Table 1 shows the number of layers in the unit cell of the s layer.
これらの化合物は酸化鉄（ＰｅＯ） １モルに対して
ＹｂＦｅ０ｉがｎ （ｎ＝１．２，３．、”）モルの割
合で化合していると考えられる層状構造を持つ化合物で
ある。These compounds have a layered structure in which YbFeOi is considered to be combined at a ratio of n (n=1.2, 3.,'') moles to 1 mole of iron oxide (PeO).
発明の目的
本発明は（ＹｂＦｅ０ｉ） １％ＦｅＯの化学式におい
て、ｎ＝Ａに相当し、Ｙｂ”の代わりにｌ ｎ ３ ＊
を、Ｆｅ’°の代わりに八１３＋を、Ｆｅ”°の代わり
に（Ｚｎ”＋Ｍｇ震゛）を置きかえた新規な化合物を提
供するにある。Object of the Invention The present invention relates to (YbFeOi) 1% In the chemical formula of FeO, n=A, and l n 3 * instead of Yb''.
The object of the present invention is to provide a novel compound in which 813+ is substituted for Fe'° and (Zn''+Mg) is substituted for Fe''°.
発明の構成
本発明の化合物はＩｎＡｌＺｎＭｇ０５で示される化合
物は、イオン結晶モデルではＩｎ３“（Ａｌ” Ｚｎ”
つＨｇ２＋ ６．Ｚ−として記述され、その構造は、Ｉ
ｎＯ＋、ｓＩＪ、 （ＡＩ、 Ｚｎ）Ｏｚ、ｓ層及びＭ
ｇＯ層の積層によって形成されており、著しい構造異方
性を持つことがその特徴の一つである。Ｚｎ”はＡ１３
′″と共に（ＡＩ。Structure of the Invention The compound of the present invention is InAlZnMg05, which is In3"(Al"Zn") in the ionic crystal model.
Hg2+ 6. Z-, its structure is I
nO+, sIJ, (AI, Zn)Oz, s layer and M
It is formed by stacking gO layers, and one of its characteristics is that it has significant structural anisotropy. Zn” is A13
'' with (AI.
Ｚｎ）Ｏｚ、ｓ層を作り、Ｍｇ！″はＭｇＯＮを作って
いる。Zn)Oz, make s layer, Mg! '' is making MgON.
六方晶系としての格子定数は以下の通りである。The lattice constants as a hexagonal system are as follows.
ａ ＝３．２８７ ± ０．００１ （人）ｃ ＝
２２．１５ ± ０．０１ （入）この化合物の
面指数（ｈｋβ）１面間隔（ｄ（人））Ｃｄ、は実測値
、ｄｃは計算値を示す〕およびＸ線に対する相対反射強
度（１％）を表−２に示す。a = 3.287 ± 0.001 (person) c =
22.15 ± 0.01 (in) Planar index (hkβ) of this compound, plane spacing (d (person)), Cd is the measured value, dc is the calculated value] and relative reflection intensity for X-rays (1% ) are shown in Table-2.
この化合物は光機能材料、半導体材料、触媒材料として
有用なものである。This compound is useful as an optical functional material, a semiconductor material, and a catalyst material.
この化合物は以下の方法によって製造し得られる。This compound can be produced by the following method.
金属インジウムあるいは酸化インジウムもしくは加熱に
より酸化インジウムに分解される化合物と、金属アルミ
ニウムあるいは酸化アルミニウムもしくは加熱により酸
化アルミニウムに分解される化合物と、金属亜鉛あるい
は酸化亜鉛もしくは加熱により酸化亜鉛となる化合物と
、金属マグネシウムあるいは酸化マグネシウムもしくは
加熱により酸化マグネシウムに分解される化合物とを、
インジウム、アルミニウム、亜鉛及びマグネシウムの割
合が原子比で１対１対１対１になるように混合して、該
混合物を６００℃以上のもとで、大気中、酸化性雰囲気
中あるいはインジウム及びアルミニウムが各々３価イオ
ン状態、亜鉛及びマグネシウムが２価イオン状態より還
元されない程度の還元雰囲気中で加熱することにより製
造し得られる。Indium metal or indium oxide or a compound that decomposes into indium oxide when heated; aluminum metal or aluminum oxide or a compound that decomposes into aluminum oxide when heated; zinc metal or zinc oxide or a compound that turns into zinc oxide when heated; Magnesium or magnesium oxide or a compound that is decomposed into magnesium oxide by heating,
Indium, aluminum, zinc, and magnesium are mixed in an atomic ratio of 1:1:1:1, and the mixture is stored in the air, in an oxidizing atmosphere, or indium and aluminum at a temperature of 600°C or higher. are each in a trivalent ion state, and zinc and magnesium can be produced by heating in a reducing atmosphere to the extent that they are not reduced more than in a divalent ion state.
本発明に用いる出発物質は市販の物をそのまま使用して
もよいが、化学反応を速やかに進行させるためには粒径
が小さい方がよく、特に１０μ…以下であることが好ま
しい。また光機能材料、半導体材料として用いる場合に
は不純物の混入をきらうので、純度の高い物が好ましい
、この原料をそのままあるいはアルコール類もしくはア
セトンと共に充分混合する。Commercially available starting materials for use in the present invention may be used as they are, but in order for the chemical reaction to proceed quickly, the particle size is preferably small, and is particularly preferably 10 μm or less. In addition, when used as an optical functional material or a semiconductor material, since contamination with impurities is to be avoided, a highly pure material is preferable. This raw material is thoroughly mixed as it is or with an alcohol or acetone.
これらの混合割合は、Ｉｎ、 ＡＩ、 Ｚｎ及びＭｇの
割合が原子比で１対１対ｌ対ｌの割合である。この割合
がはずれると目的とする化合物の単−相が得られない。The mixing ratio of these is such that the atomic ratio of In, AI, Zn, and Mg is 1:1:1:1. If this ratio is off, a single phase of the target compound cannot be obtained.
この混合物を大気中あるいは酸化性雰囲気中もしくはＩ
ｎ及びＡＩが各々３価イオン状ｋｌ Ｚｎ及びＭｇが２
価イオン状態から還元され得ない程度の還元雰囲気中で
６００℃以上で加熱する。加熱時間は数時間もしくはそ
れ以上である。加熱の際の昇温速度に制約はない。加熱
終了後Ｏ℃に急冷するかあるいは大気中に急激に引き出
せばよい。得られた化合物の粉末は無色で、粉末Ｘ線回
折法によると結晶構造を有することがわかった。その結
晶構造は層状構造であり、Ｉｎｋ、、Ｓ層、（ＡＩ。This mixture is stored in the air or in an oxidizing atmosphere or in an I
n and AI are each trivalent ionic kl Zn and Mg are 2
Heating is performed at 600° C. or higher in a reducing atmosphere to the extent that the valence ion state cannot be reduced. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The powder of the obtained compound was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is a layered structure, including Ink, S layer, (AI.
Ｚｎ）Ｏｘ、Ｓ層、及びＭｇＯ層の積み重ねによって形
成されている。It is formed by stacking Zn)Ox, S layer, and MgO layer.
実施例
純度９９．９９％以上のインジウム（ＩｎｚＯａ）粉末
。Example Indium (InzOa) powder with a purity of 99.99% or more.
純度９９．９％以上の酸化アルミニウム（Ａｔ□０３）
粉末。Aluminum oxide (At□03) with purity of 99.9% or more
powder.
および試薬特級の酸化亜鉛（ＺｎＯ）及び酸化マグネシ
ウム（Ｍｇ□）粉末をモル比で１対１対２対２の割合に
秤量し、めのう乳鉢内でエタノールを加えて、約３０分
間部合し、平均粒径数μｍの微粉状混合物を得た。該混
合物を白金管内に封入し、１３００℃に設定された管状
シリコニット炉内に入れ３日間加熱し、その後、試料を
炉外にとりだし、室温まで急速に冷却した。得られた試
料はＩｎＡｌＺｎＭｇＯ５の単−相であり、粉末Ｘ線回
折法によって、各反射の面間隔（ｄｏ）及び相対反射強
度を測定した結果は表−２の通りであった。and reagent-grade zinc oxide (ZnO) and magnesium oxide (Mg□) powders were weighed in a molar ratio of 1:1:2:2, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes. A fine powder mixture with an average particle size of several μm was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1300° C., and heated for 3 days, and then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was a single-phase InAlZnMgO5, and the interplanar spacing (do) and relative reflection intensity of each reflection were measured by powder X-ray diffraction method, and the results are shown in Table 2.
六方晶系としての格子定数は
ａ ＝３．２８７ ±０．００１ （人）Ｃ＝２２
．１５ ±０．０１ （人）であった。The lattice constant as a hexagonal crystal system is a = 3.287 ±0.001 (person) C = 22
．． 15 ±0.01 (person).
上記の格子定数および表−２の面指数（ｈ ｋ ｆｆ１
）より算出した面間隔（ｄｃ（人））は、実測の面間隔
（ｄｏ（人））と極めてよく一致している。The above lattice constant and the plane index (h k ff1
) The surface spacing (dc (person)) calculated from the method (dc (person)) is in extremely good agreement with the actually measured surface spacing (do (person)).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供した優れた効果を有する。Effects of the Invention The present invention has the excellent effect of providing a novel compound useful as an optical functional material, a semiconductor material, and a catalyst.
特許出願人 科学技術庁無機材質研究所長潮 高
信 雄
手続補正ｔＦ
昭和１２年 ２月７７日
１ 事件の表示
昭和６２年特許願第０．２９２０１隻
化合物およびその製造法
３ 補正をする者
事件との関係 特許出願人
自発締止
５ 補正の対象
（１）明細書第１０頁５行から６行「て有用な・・・・
効果を有する。」を「て有用な新規化合物を提供する。Patent applicant Takashi Nagashio, Institute of Inorganic Materials, Science and Technology Agency
Shinyu procedural amendment tF February 77, 1932 1 Display of the case 1988 Patent application No. 0.29201 Compound and its manufacturing method 3 Person making the amendment Relationship with the case Patent applicant voluntary suspension 5 Subject of amendment (1) Page 10 of the specification, lines 5 to 6, “Useful…”
have an effect. ” to provide useful new compounds.
」と訂正する。” he corrected.
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by InAlZnMgO_5.
加熱により酸化インジウムに分解される化合物と、金属
アルミニウムあるいは酸化アルミニウムもしくは加熱に
より酸化アルミニウムに分解される化合物と、金属亜鉛
あるいは酸化亜鉛もしくは加熱により酸化亜鉛に分解さ
れる化合物と、金属マグネシウムあるいは酸化マグネシ
ウムもしくは加熱により酸化マグネシウムに分解される
化合物とを、インジウム、アルミニウム、亜鉛及びマグ
ネシウムの割合が原子比で１対１対１対１になるように
混合して、該混合物を６００℃以上のもとで、大気中、
酸化性雰囲気中あるいはインジウム及びアルミニウムが
各々３価イオン状態、亜鉛及びマグネシウムが２価イオ
ン状態より還元されない程度の還元雰囲気中で加熱する
ことを特徴とするＩｎＡｌＺｎＭｇＯ＿５で示される六
方晶系の層状構造を有する化合物の製造法。(2) Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; and Metallic indium or zinc oxide or a compound that decomposes into zinc oxide when heated. A compound containing magnesium metal, magnesium oxide, or a compound decomposed into magnesium oxide by heating is mixed such that the atomic ratio of indium, aluminum, zinc, and magnesium is 1:1:1:1, The mixture was heated at 600°C or higher in the atmosphere,
The hexagonal layered structure represented by InAlZnMgO_5 is heated in an oxidizing atmosphere or in a reducing atmosphere to the extent that indium and aluminum are not reduced to a trivalent ion state, and zinc and magnesium are not reduced to a divalent ion state. A method for producing a compound having
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2920187A JPH0244242B2 (en) | 1987-02-10 | 1987-02-10 | INALZNMGO5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2920187A JPH0244242B2 (en) | 1987-02-10 | 1987-02-10 | INALZNMGO5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63195121A true JPS63195121A (en) | 1988-08-12 |
| JPH0244242B2 JPH0244242B2 (en) | 1990-10-03 |
Family
ID=12269580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2920187A Expired - Lifetime JPH0244242B2 (en) | 1987-02-10 | 1987-02-10 | INALZNMGO5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244242B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001056927A1 (en) * | 2000-02-04 | 2001-08-09 | Otsuka Chemical Co., Ltd. | Hexagonal lamellar compound based on indium-zinc oxide and process for producing the same |
-
1987
- 1987-02-10 JP JP2920187A patent/JPH0244242B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001056927A1 (en) * | 2000-02-04 | 2001-08-09 | Otsuka Chemical Co., Ltd. | Hexagonal lamellar compound based on indium-zinc oxide and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0244242B2 (en) | 1990-10-03 |
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| JPS63256521A (en) | Compound having hexagonal layer structure represented by inalzn4o7 and production thereof | |
| JPS63265824A (en) | Compound having hexagonal laminar structure expressed by infezn5o8 and its production | |
| JPS63195118A (en) | Compound having layer structure of hexagonal system shown by scgaznmgo5 and production thereof | |
| JPS63210020A (en) | Compound having laminar structure of hexagonal crystal system expressed by scgazn2mgo6 and its production | |
| JPS63265825A (en) | Compound having hexagonal laminar structure expressed by infezn3o6 and its production | |
| JPS63265817A (en) | Compound having hexagonal laminar structure expressed by inalzn7o10 and its production | |
| JPS63190715A (en) | Compound having hexagonal laminated structure expressed by scgazn2o5 and its production | |
| JPS63265816A (en) | Compound having hexagonal laminar structure expressed by scgazn7o10 and its production | |
| JPS63185823A (en) | Compound, expressed by infeznmgo5 and having hexagonal layered structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |