JPS63195117A - Compound having layer structure of hexagonal system shown by scalzn2o5 and production thereof - Google Patents

Compound having layer structure of hexagonal system shown by scalzn2o5 and production thereof

Info

Publication number
JPS63195117A
JPS63195117A JP2920287A JP2920287A JPS63195117A JP S63195117 A JPS63195117 A JP S63195117A JP 2920287 A JP2920287 A JP 2920287A JP 2920287 A JP2920287 A JP 2920287A JP S63195117 A JPS63195117 A JP S63195117A
Authority
JP
Japan
Prior art keywords
compound
heated
atmosphere
oxides
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2920287A
Other languages
Japanese (ja)
Other versions
JPH0246522B2 (en
Inventor
Noboru Kimizuka
昇 君塚
Naohiko Mori
毛利 尚彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP2920287A priority Critical patent/JPH0246522B2/en
Publication of JPS63195117A publication Critical patent/JPS63195117A/en
Publication of JPH0246522B2 publication Critical patent/JPH0246522B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the titled novel compound useful as an optically functional material, semiconductor material and catalytic material, by heating Sc, Al and Zn or oxides thereof and compounds to be decomposed into the oxides by heating, in the atmosphere, an oxidizing atmosphere or a specific reducing atmosphere. CONSTITUTION:Sc, Al and Zn or oxides of these metallic elements or compounds to be decomposed into the oxides by heating are blended in the atomic ratio of Sc, Al and Zn or 1:1:2. Then the mixture is heated at >=600 deg.C in the atmosphere, in an oxidizing atmopshere or in such a reducing atmosphere that Sc is not reduced from a trivalent state and Zn is not reduced from a bivalent state. Powder of the prepared compound shown by the formula ScAlZn2 O5 is colorless and is shown to have crystal layer structure by powder X-ray diffractiometry.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光機能材料、半導体材料等として有用な新規化
合物である5cAIZnzOsで示される六方晶系の層
状構造を有する化合物及びその製造法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by 5cAIZnzOs, which is a new compound useful as an optical functional material, a semiconductor material, etc., and a method for producing the same.

従来技術 従来、(Yb”Fe”03)、、Fe”O(nは整数を
表わす)で示される六方晶系の層状構造を有する化合物
は、本出願人によって合成され、知られている。
Prior Art Conventionally, compounds having a hexagonal layered structure represented by (Yb"Fe"03), , Fe"O (n represents an integer) have been synthesized by the present applicant and are known.

YbFezOa +YbtFe2(lr+YbJeno
+o及びYb1F8s(1++の六方晶系としての格子
定数、 YbO+、s層、FeO+、s層、 FezO
□、5層の単位格子内における層数を示すと表−1の通
りである。
YbFezOa +YbtFe2(lr+YbJeno
+o and Yb1F8s (1++ lattice constant as hexagonal system, YbO+, s layer, FeO+, s layer, FezO
Table 1 shows the number of layers in the unit cell of □ and 5 layers.

これらの化合物は酸化鉄(Fed)  1モルに対して
YbFe0+がn (n=1.2.3. ・=)モルの
割合で化合していると考えられる層状構造を持つ化合物
である。
These compounds are compounds having a layered structure in which YbFe0+ is combined at a ratio of n (n=1.2.3. .=) moles to 1 mole of iron oxide (Fed).

発明の目的 本発明は(YbFe03) 、FeOの化学式において
、n=2に相当し、Yb”の代わりにSc”を、Fe”
+の代わりにA139を、Fe”+の代わりにZn”″
を置きかえた新規な化合物を提供するにある。
Purpose of the Invention The present invention provides (YbFe03), which corresponds to n=2 in the chemical formula of FeO, with Sc" instead of Yb" and Fe"
A139 instead of +, Zn"" instead of Fe"+
The purpose of the present invention is to provide a novel compound that replaces the .

発明の構成 本発明の化合物は5cAIZnzOsで示される化合物
は、イオン結晶モデルではSc” (Al” Zn”)
Zn240,2−として記述され、その構造は、ScO
+、s層、 (AI、 Zn)Ox、 s層及びZnO
層の積層によって形成されており、著しい構造異方性を
持つことがその特徴の一つである。Zn”はイオンの半
数はAI”と共に(AI、Zn))Og、 s層を作り
、残りの半数はZnONを作っている。六方晶系として
の格子定数は以下の通りである。
Structure of the Invention The compound of the present invention is 5cAIZnzOs.
Zn240,2-, its structure is ScO
+, s layer, (AI, Zn)Ox, s layer and ZnO
It is formed by laminating layers, and one of its characteristics is that it has significant structural anisotropy. Half of the ions of Zn'' together with AI'' form the (AI, Zn)) Og, s layer, and the remaining half form ZnON. The lattice constants as a hexagonal crystal system are as follows.

a =3.245  ±0.001  (人)c =2
2.24  ± 0.01   (人)この化合物の面
指数(hkl)、面間隔(d(人))(dOは実測値、
dcは計算値を示す〕およびX線に対する相対反射強度
(1%)を表−2に示す。
a = 3.245 ±0.001 (person) c = 2
2.24 ± 0.01 (person) Planar index (hkl), plane spacing (d (person)) of this compound (dO is the measured value,
dc indicates a calculated value] and the relative reflection intensity (1%) for X-rays are shown in Table 2.

この化合物は光機能材料、半導体材料、触媒材料として
有用なものである。
This compound is useful as an optical functional material, a semiconductor material, and a catalyst material.

この化合物は以下の方法によって製造し得られる。This compound can be produced by the following method.

金属スカンジウムあるいは酸化スカンジウムもしくは加
熱により酸化スカンジウムに分解される化合物と、金属
アルミニウムあるいは酸化アルミニウムもしくは加熱に
より酸化アルミニウムに分解される化合物と、金属亜鉛
あるいは酸化亜鉛もしくは加熱により酸化亜鉛に分解さ
れる化合物とを、スカンジウム、アルミニウム及び亜鉛
の割合が原子比で1対1対2になるように混合して、該
混合物を600℃以上のもとで、大気中、酸化性雰囲気
中あるいはスカンジウム及びアルミニウムが各々3価イ
オン状態、亜鉛が2価イオン状態より還元されない程度
の還元雰囲気中で加熱することにより製造し得られる。
Scandium metal or scandium oxide or a compound that decomposes into scandium oxide when heated; Aluminum metal or aluminum oxide or a compound that decomposes into aluminum oxide when heated; Zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. are mixed so that the ratio of scandium, aluminum, and zinc is 1:1:2 in atomic ratio, and the mixture is heated at 600°C or higher in the air, in an oxidizing atmosphere, or when scandium and aluminum are mixed, respectively. Zinc in a trivalent ion state can be produced by heating in a reducing atmosphere to the extent that zinc is not reduced more than in a divalent ion state.

本発明に用いる出発物質は市販の物をそのまま使用して
もよいが、化学反応を速やかに進行させるためには粒径
が小さい方がよく、特に10μm以下であることが好ま
しい。また光機能材料、半導体材料として用いる場合に
は不純物の混入をきらうので、純度の高い物が好ましい
。この原料をそのままあるいはアルコール類もしくはア
セトンと共に充分混合する。
Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, the particle size is preferably small, particularly preferably 10 μm or less. Furthermore, when used as an optical functional material or a semiconductor material, it is preferable to use a material with high purity since contamination with impurities is avoided. This raw material is thoroughly mixed as it is or with an alcohol or acetone.

これらの混合割合は、Sc、^1.′、及びZnの割合
が原子比で1対1対2の割合である。この割合がはずれ
ると目的とする化合物の単−相が得られない。この混合
物を大気中あるいは酸化性雰囲気中もしくはSc及びA
Iが各々3価イオン状態、 Znが2価イオン状態から
還元され得ない程度の還元雰囲気中で600℃以上で加
熱する。加熱時間は数時間もしくはそれ以上である。加
熱の際の昇温速度に制約はない。加熱終了後O℃に急冷
するかあるいは大気中に急激に引き出せばよい。得られ
た化合物の粉末は無色で、粉末X線回折法によると結晶
構造を有することがわかった。その結晶構造は層状構造
であり、5c01.s層、(八1. Zn)Oz、s層
、及びZnO層の積み重ねによって形成されている。
The mixing ratio of these is Sc,^1. ', and Zn in an atomic ratio of 1:1:2. If this ratio is off, a single phase of the target compound cannot be obtained. This mixture is stored in the air, in an oxidizing atmosphere, or in an atmosphere containing Sc and A.
It is heated at 600° C. or higher in a reducing atmosphere such that I cannot be reduced from its trivalent ion state and Zn from its divalent ion state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The powder of the obtained compound was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is a layered structure, and 5c01. It is formed by stacking an s layer, a (81.Zn)Oz layer, an s layer, and a ZnO layer.

実施例 純度99.99%以上のスカンジウム(SczO,、)
粉末。
Example Scandium (SczO,) with a purity of 99.99% or more
powder.

純度99.9%以上の酸化アルミニウム(AhOi)粉
末。
Aluminum oxide (AhOi) powder with a purity of 99.9% or more.

および試薬特級の酸化亜鉛(ZnO)粉末をモル比で1
対1対4の割合に秤量し、めのう乳鉢内でエタノールを
加えて、約30分間混合し、平均粒径数μlの微粉状混
合物を得た。該混合物を白金管内に封入し、1300℃
に設定された管状シリコニット炉内に入れ3日間加熱し
、その後、試料を炉外にとりだし、室温まで急速に冷却
した。得られた試料は5cAIZnzOsの単−相であ
り、粉末X線回折法によって、各反射の面間隔(do)
及び相対反射強度を測定した結果は表−2の通りであっ
た。
and reagent grade zinc oxide (ZnO) powder in a molar ratio of 1
The mixture was weighed at a ratio of 1:4, ethanol was added in an agate mortar, and mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μl. The mixture was sealed in a platinum tube and heated to 1300°C.
The sample was placed in a tubular siliconite furnace set at 300 degrees Fahrenheit and heated for 3 days, and then taken out of the furnace and rapidly cooled to room temperature. The obtained sample was a single phase of 5cAIZnzOs, and the interplanar spacing (do) of each reflection was determined by powder X-ray diffraction method.
The results of measuring the relative reflection intensity are shown in Table 2.

六方晶系としての格子定数は a =3.245  ±0.001  (人)c=22
.24  ±0.01  (人)であった。
The lattice constant as a hexagonal crystal system is a = 3.245 ±0.001 (person) c = 22
.. 24 ±0.01 (person).

上記の格子定数および表−2の面指数(h k 1)よ
り算出した面間隔(dc(人))は、実測の面間隔(d
o(人))と極めてよく一致している。
The plane spacing (dc (person)) calculated from the above lattice constant and the plane index (h k 1) in Table 2 is the measured plane spacing (d
o (person)).

発明の効果 本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供した優れた効果を有する。
Effects of the Invention The present invention has the excellent effect of providing a novel compound useful as an optical functional material, a semiconductor material, and a catalyst.

特許出願人 科学技術庁無機材質研究所長1.’、’ 
、 、 ] 、、Ji手続補正吉 昭和!Z年2月77日
Patent applicant: Director, Institute of Inorganic Materials, Science and Technology Agency 1. ','
, , ] , , Ji procedure amendment Yoshishowa! February 77, Z

Claims (2)

【特許請求の範囲】[Claims] (1)ScAlZn_2O_5で示される六方晶系の層
状構造を有する化合物。
(1) A compound having a hexagonal layered structure represented by ScAlZn_2O_5.
(2)金属スカンジウムあるいは酸化スカンジウムもし
くは加熱により酸化スカンジウムに分解される化合物と
、金属アルミニウムあるいは酸化アルミニウムもしくは
加熱により酸化アルミニウムに分解される化合物と、金
属亜鉛あるいは酸化亜鉛もしくは加熱により酸化亜鉛に
分解される化合物とを、スカンジウム、アルミニウム及
び亜鉛の割合が原子比で1対1対2になるように混合し
て、該混合物を 600℃以上のもとで、大気中、酸化性雰囲気中あるい
はスカンジウム及びアルミニウムが各々3価イオン状態
、亜鉛が2価イオン状態より還元されない程度の還元雰
囲気中で加熱することを特徴とするScAlZn_2O
_5で示される六方晶系の層状構造を有する化合物の製
造法。
(2) Scandium metal or scandium oxide or a compound that decomposes into scandium oxide when heated; metal aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated; Scandium, aluminum, and zinc are mixed in an atomic ratio of 1:1:2, and the mixture is heated at 600°C or higher in the air, an oxidizing atmosphere, or in an oxidizing atmosphere. ScAlZn_2O, which is heated in a reducing atmosphere to the extent that aluminum is not reduced to a trivalent ion state and zinc is not reduced to a divalent ion state.
A method for producing a compound having a hexagonal layered structure represented by _5.
JP2920287A 1987-02-10 1987-02-10 SCALZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO Expired - Lifetime JPH0246522B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2920287A JPH0246522B2 (en) 1987-02-10 1987-02-10 SCALZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2920287A JPH0246522B2 (en) 1987-02-10 1987-02-10 SCALZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO

Publications (2)

Publication Number Publication Date
JPS63195117A true JPS63195117A (en) 1988-08-12
JPH0246522B2 JPH0246522B2 (en) 1990-10-16

Family

ID=12269606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2920287A Expired - Lifetime JPH0246522B2 (en) 1987-02-10 1987-02-10 SCALZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO

Country Status (1)

Country Link
JP (1) JPH0246522B2 (en)

Also Published As

Publication number Publication date
JPH0246522B2 (en) 1990-10-16

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