JPS63185823A - Compound, expressed by infeznmgo5 and having hexagonal layered structure - Google Patents

Abstract

PURPOSE:To obtain novel magnetic, semiconductor and catalyst materials, by heating indium oxide, iron oxide, zinc oxide, magnesium oxide, etc., blended at the same atomic ratio, under specific condition. CONSTITUTION:Metallic indium, indium oxide or a compound decomposable into indium oxide by heating is blended with iron, zinc and magnesium in the respective same manner as described above at 1:1:1:1 atomic ratio. The resultant blend is then heated at >=600 deg.C in a given atmosphere. The above-mentioned atmosphere is limited to the air, oxidizing atmosphere or reducing atmosphere in which the indium and iron are not respectively reduced from trivalent states and the magnesium and zinc are not respectively reduced from bivalent states.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a compound having a hexagonal layered structure represented by InFeZnMg0s, which is a new compound useful as a magnetic material, a semiconductor material, and a catalyst material, and a method for producing the same.

Prior Art Conventionally, compounds having a hexagonal layered structure represented by (Yb"Fe"Oz) and Fe"O (n is an integer) have been synthesized by the present applicant and are known.

YbFezOn, YbgFesO2, Yb3Fen
Lattice constants of O+o and YbFe0+ 3 as a hexagonal system, YbO,..., Ji, Fed,...

It is a compound with a layered structure in which YbFe0+, which indicates the number of layers in the unit cell of layers +, Fete, and s layers, is combined at a ratio of n moles.

Purpose of the Invention The present invention provides that (YbF'eO:+) corresponds to n=y in the chemical formula of FeO, and In'' is substituted for yb'', p
The object of the present invention is to provide a novel compound obtained by replacing e 2 * with (Zn" 10 Mg").

Structure of the Invention The compound represented by InFeZnMg05 of the present invention has an ionic crystal model of 1ni (pel+zn!+)11
g! *0. ! -, and its structure is formed by stacking InO+, s layer, (Fe, Zn)Oz, sN, and MgO layers, and one of its characteristics is that it has significant structural anisotropy.

Zn” together with Fe3+ (Fe”, Zn”) Oz, s
Mgg* creates a MgO layer. The lattice constants as a hexagonal crystal system are as follows.

a −3,324±0.001 (person) c =22.
32 ±0.01 (person) Surface index of this compound (h
kl), interplanar distance (do (person)) (d: actual measurement value, dc: calculated value), and relative reflection intensity CI for X-rays
(%)] is shown in Table-2.

This compound is useful as a magnetic material, a semiconductor material, a catalytic material, and the like.

This compound can be produced by the following method.

Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. , metallic magnesium or magnesium oxide or a compound that decomposes into magnesium oxide by heating, In, Fe, Zn and M
g in an atomic ratio of 1:1:1:1, and the mixture was heated at 600°C or higher in the air, in an oxidizing atmosphere, or in an oxidizing atmosphere.
and Fe are each in a trivalent state, and Mg and Zn are each in a 2-valent state.
It can be produced by heating in a reducing atmosphere that does not reduce the valence state.

Commercially available starting materials for use in the present invention can be used as they are, but in order to speed up the chemical reaction, the smaller the particle size, the better, particularly preferably 10 μm or less. Further, when used as a magnetic material or a semiconductor material, it is preferable to use a material with high purity to avoid contamination with impurities.

These are thoroughly mixed as is or with alcohol, acetone, etc.

These mixing ratios are In, Fe, Mg and Zn
The ratio is an atomic ratio of 1:1:1:1. If this ratio is exceeded, a single phase of the target compound cannot be obtained. This mixture was heated in air, in an oxidizing atmosphere, or in a reducing atmosphere in which In and Fe were not reduced from their trivalent states, and Li, Mg, and Zn were not reduced from their divalent states, for 60 min.
Heat above 0°C. Heating time is several hours or more. There is no restriction on the rate of temperature increase during heating; it is sufficient to rapidly cool the material after heating or to rapidly draw it out into the atmosphere.

The obtained InFeZnMg0s compound powder was brown in color and was found to have a crystal structure by powder X-ray diffraction. Its crystal structure is a layered structure, with InO+ and s layers.

(Fe"Zn") is formed by stacking three layers and a MgO layer.

Example Indium oxide powder with purity of 99.99% or more, purity 99
．． 9% or more iron oxide powder, reagent grade magnesium oxide powder, and reagent grade zinc oxide powder in a molar ratio of 1:1.
The mixtures were weighed at a ratio of 2:2, ethanol was added in a mortar, and the mixture was mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μm. The mixture was sealed in a platinum tube, placed in a tubular silicone furnace set at 1300°C, and heated for 3 days.
The sample was taken out of the furnace and rapidly cooled to room temperature.

The obtained sample was InFeZnMg05 single-phase,
The interplanar spacing (do) and relative reflection intensity of each reflection were measured by powder X-ray diffraction method. The results were as shown in Table-2.

The lattice constants as a hexagonal crystal system were as follows.

a-3,324±0.001 (person) c = 22.32 ±0.01 C person) Plane spacing [dc (person)] calculated from this lattice constant and each reflection (h k A) in Table-2 was in good agreement with the actually measured surface spacing [do (person)].

Nobu Se Taka Yuyu Procedures Amendment Written February 77, 1932 1 Case Description 1988 Patent Application No. 017012 2 Compound having a macrogonal layered structure represented by the title of the invention InFeZnMgO5 and its manufacturing method 3 1+Relationship with the case of the person making the Ii correction Patent applicant address 1-1 Namiki, Sakuramura, Niiharu-gun, Ibaraki Voluntary amendment 5 Subject of hli correction Attachment (1) Specification page 9, between lines 17 and 18, the following Add a sentence.

[Effect of the invention

Claims (2)

[Claims] (1) A compound having a hexagonal layered structure represented by InPeZnMgO_5. (2) Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; metal zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. A compound containing magnesium metal, magnesium oxide, or a compound that decomposes into magnesium oxide upon heating is mixed with In, Fe, Zn, and Mg in an atomic ratio of 1:1:1:1, and the mixture is mixed with 600% ℃ or above in the air, in an oxidizing atmosphere, or when In and Fe are each in a trivalent state, and when Mg and Zn are each in a divalent state.
A method for producing a compound having a hexagonal layered structure represented by InFeZnMgO_5, which comprises heating in a reducing atmosphere that does not reduce the valence state.