JPS63195126A - Compound having hexagonal lamellar structure expressed by lufeznmgo5 and production thereof - Google Patents
Compound having hexagonal lamellar structure expressed by lufeznmgo5 and production thereofInfo
- Publication number
- JPS63195126A JPS63195126A JP2920587A JP2920587A JPS63195126A JP S63195126 A JPS63195126 A JP S63195126A JP 2920587 A JP2920587 A JP 2920587A JP 2920587 A JP2920587 A JP 2920587A JP S63195126 A JPS63195126 A JP S63195126A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- oxide
- heating
- metallic
- mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 10
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000011701 zinc Substances 0.000 claims description 13
- 239000011777 magnesium Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 8
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052765 Lutetium Inorganic materials 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910003443 lutetium oxide Inorganic materials 0.000 claims description 5
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000696 magnetic material Substances 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000003054 catalyst Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- -1 n = % Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁性材料、半導体材料及び触媒作用としてを用
な新規化合物であるLuFeZnMg0sで示される六
方晶系の層状構造を有する化合物およびその製造法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a compound having a hexagonal layered structure represented by LuFeZnMg0s, which is a new compound used as a magnetic material, a semiconductor material, and a catalytic material, and a method for producing the same.
従来技術
従来、(Yb3°Fe”0s)nFe”0(nは整数を
示す)で示される六方晶系の層状構造を有する化合物は
本出願人によって合成され知られている。Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb3°Fe"0s)nFe"0 (n is an integer) was synthesized by the present applicant and is known.
YbFe、0. 、 Yb4FesO+、 Yb3Fe
、0.、及びYb4FesO+ 3の六方晶系としての
格子定数、YbO+、s層+ FeO+、s層、 Pe
zO□、、riの単位格子内における層数を示すと表−
1の通りである。YbFe, 0. , Yb4FesO+, Yb3Fe
, 0. , and the lattice constant of Yb4FesO+ as a hexagonal system of 3, YbO+, s-layer + FeO+, s-layer, Pe
The number of layers in the unit cell of zO□,,ri is shown in the table-
1.
どれらの化合物は酸化鉄(Fed) 1モルに対して、
YbFe0.がnモル(n =1.2.3 ・・・)の
割合で化合してりると考えられる層状構造を持つ化合物
である。For 1 mole of iron oxide (Fed), which compound is
YbFe0. It is a compound with a layered structure that is thought to be combined at a ratio of n moles (n = 1.2.3...).
発明の目的
本発明は(YbFeO*)。FeOの化学式において、
n=%に相当し、Yb”の代わりにLu”を、p e
t +の代わりに(Zn”+Mg”)を置きかえて得ら
れる新規な化合物を提供するにある。OBJECTS OF THE INVENTION The present invention relates to (YbFeO*). In the chemical formula of FeO,
n = %, Lu” instead of Yb”, p e
The object of the present invention is to provide a novel compound obtained by replacing t + with (Zn''+Mg'').
発明の構成
本発明のLuFeZnMgO,で示される化合物は、イ
オン結晶モデルでは、Lu”(Pe” Zn”) Mg
”Os”として記載され、その構造は1u01,5層
(pe!+Zn”) Oz、s層およびMgO層の積層
によって形成されており、著しい構造異方性を持ってい
ることがその特徴の一つである。Zn”はp e 3
+と共に(Fe”。Structure of the Invention In the ionic crystal model, the compound represented by LuFeZnMgO of the present invention is Lu”(Pe”Zn”) Mg
It is described as “Os” and its structure is 1u01,5 layers.
(pe!+Zn") It is formed by stacking Oz, S layer and MgO layer, and one of its characteristics is that it has remarkable structural anisotropy. Zn" is p e 3
With + (Fe”.
Zn”) Ot、 s層を作り、l g z tはMg
O層を作っている。Zn”) Ot, s layer is made, l g z t is Mg
It makes up the O layer.
六方晶系としての格子定数は次の通りである。The lattice constants as a hexagonal crystal system are as follows.
a −3,389±0.001 (人)c =21.
90 ±o、ot c人)この化合物の面指数(h
k#)、面間隔(d(人))(d、は実測値+ aCは
計算値を示す)およびX′aに対する相対反射強度(+
(%))を示すと表−2の通りである。a -3,389±0.001 (person) c =21.
The surface index (h
k#), surface spacing (d (person)) (d is the measured value + aC is the calculated value) and the relative reflection intensity with respect to X'a (+
(%)) is shown in Table 2.
この化合物は磁性材料、半導体材料および触媒材料とし
て有用なものである。例えば異方性の強い2次元的性質
を持つ磁性体、半導体および触媒物質としての利用の可
能性が考えられる。This compound is useful as a magnetic material, a semiconductor material, and a catalytic material. For example, it is possible to use it as a magnetic material, a semiconductor, and a catalytic material that has two-dimensional properties with strong anisotropy.
この化合物は次の方法によって製造し得られ、る。This compound can be produced by the following method.
金属ルテチウムあるいは酸化ルテチウムもしくは加熱に
より酸化ルテチウムに分解される化合物と、金属鉄ある
いは酸化鉄もしくは加熱により酸化鉄に分解される化合
物と、金属亜鉛あるいは酸化亜鉛もしくは加熱により酸
化亜鉛に分解される化合物と、金属マグネシウムあるい
は酸化マグネシウムもしくは加熱により酸化マグネシウ
ムに分解される化合物とを、Lu、 Pe、 Znおよ
びMgの割合が原子比で1対1対1対1の割合で混合し
、該混合物を600℃以上の温度で大気中、酸化性雰囲
気中あるいはLuおよびFeが各々3価イオン状a、z
nおよびMgが2価イオン状態より還元されない還元雰
囲気中で加熱することによって得られる。Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating; Metallic iron or iron oxide or a compound that is decomposed into iron oxide by heating; Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating. , metallic magnesium, magnesium oxide, or a compound decomposed into magnesium oxide by heating, are mixed in an atomic ratio of Lu, Pe, Zn, and Mg in an atomic ratio of 1:1:1:1, and the mixture is heated at 600°C. At temperatures above, in the air, in an oxidizing atmosphere, or in a trivalent ion state a, z of Lu and Fe, respectively.
It is obtained by heating in a reducing atmosphere in which n and Mg are not reduced from the divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に10μm以下であることが好
ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size, particularly preferably 10 μm or less.
また、 719材料、半導体材料として用いる場合には
不純物の混入をきらうので、純度の裔いことが好ましい
。出発物質が加熱により金属酸化物を得る化合物として
は、それぞれの金属の水酸化物、炭酸塩、硝酸塩等が挙
げられる。Furthermore, when used as a 719 material or a semiconductor material, contamination with impurities is avoided, so it is preferable to maintain purity. Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Lu、 Fe、 Zn、 Mgの割
合が原子比で1対1対1対1の割合であることが必要で
ある。これをはずすと目的とする化合物の単−相を得る
ことができない。The mixing ratio of the raw materials needs to be such that the atomic ratio of Lu, Fe, Zn, and Mg is 1:1:1:1. If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはLuおよ
びFeが各々3価イオン状態、 ZnおよびMgが各々
2価イオン状態から還元されない還元雰囲気中で600
℃以上で加熱する。加熱時間は数時間もしくはそれ以上
である。加熱の際の昇温速度には制約はない、加熱終了
後急冷するか、あるいは大気中に急激に引き出せばよい
。This mixture was heated for 600 min in air, in an oxidizing atmosphere, or in a reducing atmosphere in which Lu and Fe were not reduced from their trivalent ion states, and Zn and Mg were not reduced from their divalent ion states.
Heat above ℃. Heating time is several hours or more. There is no restriction on the rate of temperature increase during heating; it is sufficient to rapidly cool the material after heating or to rapidly draw it out into the atmosphere.
得られたLuFeZnMgO,化合物の粉末は無色であ
り、粉末X線回折法によって結晶構造を有することが分
かった。その結晶構造は層状構造であり、Lu0t、s
層+ (Fe、 Zn)O’z、 s層、およびMgO
層の積み重ねによって形成されていることが分かった。The obtained LuFeZnMgO compound powder was colorless and was found to have a crystal structure by powder X-ray diffraction. Its crystal structure is a layered structure, and Lu0t,s
layer + (Fe, Zn)O'z, s layer, and MgO
It turns out that it is formed by stacking layers.
実施例
純度99.99%以上の酸化ルテチウム(t、uzo3
)粉末、純度99.9%以上の酸化鉄(pe!o:t)
粉末、試薬特級の酸化亜鉛(ZnO)および試薬特級の
酸化マグネシウム(MgO)粉末をモル比で1対1対2
対2の割合に秤量し、めのう乳鉢内でエタノールを加え
て、約30分間部合し、平均粒径数μmの微粉状混合物
を得た。該混合物を白金管内に封入し、1300℃に設
定された管状シリコニット炉内に入れ、3日間加熱し、
その後、試料を炉外にとりだし室温まで急速に冷却した
。Examples Lutetium oxide (t, uzo3) with a purity of 99.99% or more
) powder, iron oxide (pe!o:t) with a purity of 99.9% or more
Powder, reagent grade zinc oxide (ZnO) and reagent grade magnesium oxide (MgO) powder in a molar ratio of 1:1:2.
The mixture was weighed at a ratio of 2:2, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μm. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1300°C, and heated for 3 days.
Thereafter, the sample was taken out of the furnace and rapidly cooled to room temperature.
得られた試料は、LuFeZnMg05単−相であり、
粉末X線回折法によって各反射の面間隔(do)および
相対反射強度を測定した結果は表−2の通りであった。The obtained sample was LuFeZnMg05 single-phase,
Table 2 shows the results of measuring the interplanar spacing (do) and relative reflection intensity of each reflection using powder X-ray diffraction.
六方晶系としての格子定数は次の通りであった。The lattice constants as a hexagonal crystal system were as follows.
ム=3.389 ±0.001 (人)c =21
.90 ±0.01 (人)上記の格子定数および
表−2の各面指数(h k l)より算出した面間隔(
dc(人))は、実測の面間隔(do(人))と極めて
よく一致していた。m = 3.389 ±0.001 (person) c = 21
.. 90 ±0.01 (person) Plane spacing (calculated from the above lattice constant and each plane index (h k l) in Table 2
dc (person)) was in extremely good agreement with the actually measured surface spacing (do (person)).
特許出願人 科学技術庁無機材質研究所長瀬 高
信 雄
手続補正吉
昭和J2年 7J] /70
1 事件の表示
昭和62年特許願第029205号
化合物およびその製造法
:3 補正をする者
事件との関係 特許出願人
住所 茨城県新治郡桜村並木1丁F+ 1番地力 ガク
r)1ツチ3ウム 訃 ザイ/ツケ7律〜二つ71チ
リウ氏名 科学技術庁無機材質研究所長
瀬高信雄
4 補正命令の目付
自発補正
(1)明細書第1O頁2行と3行の間に次の文を加入す
る。Patent applicant Takashi Nagase, Institute of Inorganic Materials, Science and Technology Agency
Nobuo Proceedings Amendment Yoshishowa J2 7J] /70 1 Indication of the case 1988 Patent Application No. 029205 Compound and its manufacturing method: 3 Person making the amendment Relationship with the case Patent applicant address 1 Namiki, Sakuramura, Niiharu District, Ibaraki Prefecture Ding F+ 1 address power Gaku r) 1 Tsuchi 3 Um 胃 Zai/Tsuke 7 Ritsu ~ Two 71 Chiriu Name Science and Technology Agency Research Institute for Inorganic Materials Takanobuo Nagase 4 Voluntary amendment of basis weight of amendment order (1) Specification No. 1 O page 2 Add the following sentence between lines 3 and 3.
「発明の効果"Effect of the invention
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by LuFeZnMgO_5.
加熱により酸化ルテチウムに分解される化合物と、金属
鉄あるいは酸化鉄もしくは加熱により酸化鉄に分解され
る化合物と、金属亜鉛あるいは酸化亜鉛もしくは加熱に
より酸化亜鉛に分解される化合物と、金属マグネシウム
あるいは酸化マグネシウムもしくは加熱により酸化マグ
ネシウムに分解される化合物とを、Lu、Fe、Znお
よびMgの割合が原子比で1対1対1対1の割合で混合
し、該混合物を600℃以上の温度で大気中、酸化性雰
囲気中あるいはLuおよびFeが各々3価イオン状態、
ZnおよびMgが2価イオン状態より還元されない還元
雰囲気中で加熱することを特徴とするLuFeZnMg
O_5で示される六方晶系の層状構造を有する化合物の
製造法。(2) Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating, metallic iron or iron oxide or a compound that is decomposed into iron oxide by heating, and metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating. A compound containing metallic magnesium, magnesium oxide, or a compound decomposed into magnesium oxide by heating is mixed in an atomic ratio of Lu, Fe, Zn, and Mg of 1:1:1:1, and the mixture is at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or when Lu and Fe are each in a trivalent ion state,
LuFeZnMg characterized by heating in a reducing atmosphere in which Zn and Mg are not reduced from a divalent ion state
A method for producing a compound having a hexagonal layered structure represented by O_5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2920587A JPS63195126A (en) | 1987-02-10 | 1987-02-10 | Compound having hexagonal lamellar structure expressed by lufeznmgo5 and production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2920587A JPS63195126A (en) | 1987-02-10 | 1987-02-10 | Compound having hexagonal lamellar structure expressed by lufeznmgo5 and production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63195126A true JPS63195126A (en) | 1988-08-12 |
JPH0338213B2 JPH0338213B2 (en) | 1991-06-10 |
Family
ID=12269691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2920587A Granted JPS63195126A (en) | 1987-02-10 | 1987-02-10 | Compound having hexagonal lamellar structure expressed by lufeznmgo5 and production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63195126A (en) |
-
1987
- 1987-02-10 JP JP2920587A patent/JPS63195126A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0338213B2 (en) | 1991-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS63195126A (en) | Compound having hexagonal lamellar structure expressed by lufeznmgo5 and production thereof | |
JPS63201017A (en) | Compound having layer structure of hexagonal system shown in tmfeznmgo5 and its production | |
JPS63190714A (en) | Compound having hexagonal laminated structure expressed by ybgaznmgo5 and its production | |
JPS63256521A (en) | Compound having hexagonal layer structure represented by inalzn4o7 and production thereof | |
JPS63185819A (en) | Compound having hexagonal lamellar structure and expressed by ingaznmgo5 and production thereof | |
JPS63277516A (en) | Compound having hexagonal layer structure expressed by lualzn7o10 and production thereof | |
JPS63277521A (en) | Compound having hexagonal layer structure expressed by lufezn3o6 and production thereof | |
JPS63201016A (en) | Compound having layer structure of hexagonal system shown in inalzn2o5 and its production | |
JPS63185823A (en) | Compound, expressed by infeznmgo5 and having hexagonal layered structure | |
JPS63185815A (en) | Compound having hexagonal lamellar structure and expressed by lugazn2o5 and production thereof | |
JPS63256525A (en) | Compound having hexagonal layer structure represented by inalzn5o8 and production thereof | |
JPS63195118A (en) | Compound having layer structure of hexagonal system shown by scgaznmgo5 and production thereof | |
JPS63185827A (en) | Compound, expressed by ybfeznmgo5 and having hexagonal layered structure | |
JPH0361612B2 (en) | ||
JPS63256520A (en) | Compound having hexagonal layer structure represented by scalzn5o8 and production thereof | |
JPH0336770B2 (en) | ||
JPS63190715A (en) | Compound having hexagonal laminated structure expressed by scgazn2o5 and its production | |
JPS63277520A (en) | Compound having hexagonal layer structure expressed by lufezn7o10 and production thereof | |
JPS63260824A (en) | Compound having hexagonal layer structure expressed by ybfezn7o10 and production thereof | |
JPH0359010B2 (en) | ||
JPS63190721A (en) | Compound having hexagonal laminated structure expressed by scfezn2o5 and its production | |
JPS63195120A (en) | Compound having hexagonal laminar structure expressed by ybgazn2o5 and production thereof | |
JPS63215514A (en) | Compound having hexagonal lamellar structure and expressed by scalzn3o6 | |
JPS63295419A (en) | Compound shown by ybgazn3o6 and having hexagonal lamellar structure and its production | |
JPH0361611B2 (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |