JPS63185816A - Compound having hexagonal lamellar structure and expressed by inalmg2o5 and production thereof - Google Patents
Compound having hexagonal lamellar structure and expressed by inalmg2o5 and production thereofInfo
- Publication number
- JPS63185816A JPS63185816A JP1891887A JP1891887A JPS63185816A JP S63185816 A JPS63185816 A JP S63185816A JP 1891887 A JP1891887 A JP 1891887A JP 1891887 A JP1891887 A JP 1891887A JP S63185816 A JPS63185816 A JP S63185816A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- layer
- indium
- heated
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 8
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000011874 heated mixture Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229940110676 inzo Drugs 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料等として有用な新規化
合物であるＩｎＡＩＭｇｚＯｓで示され六方晶系の層状
構造を有する化合物及びその製造法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a novel compound, InAIMgzOs, which is useful as an optical functional material, a semiconductor material, etc. and has a hexagonal layered structure, and a method for producing the same.
従来技術
従来、（Ｙｂ”Ｆｅ”Ｏｓ） ａＦｅ”°Ｏ（ｎは整数
を表わす）で示される六方晶系の層状構造を有する化合
物は、本出願人によって合°成され、知られている。BACKGROUND OF THE INVENTION Conventionally, a compound having a hexagonal layered structure represented by (Yb"Fe"Os) aFe"°O (n represents an integer) was synthesized by the present applicant and is known.
ＹｂＦｅ＊０４．ＹｂＪｅ３０７．Ｙｂ５Ｆｅ４０ｔｏ
及びＹｂ４ＦｅｓＯ＋ ２の大方晶系としての格子定数
、 ｙｂｏｔ、ｓ層、ＦｅＯ＋、ｓ層、 Ｆ＋ＪＯｘ、
ｓ層の単位格子内における層数を示すと表−１の通り
である。YbFe*04. YbJe307. Yb5Fe40to
and the lattice constant of Yb4FesO+ 2 as a macrogonal system, ybot, s layer, FeO+, s layer, F+JOx,
Table 1 shows the number of layers in the unit cell of the s-layer.
がｎ （ｎ＝＝１． ２． ３．・・・）モルの割合で
化合していると考えられる層状構造を持つ化合物である
。It is a compound with a layered structure that is thought to be combined in a ratio of n (n = = 1. 2. 3...) moles.
発明の目的
本発明は（ＹｂＦｅＯｚ） 、、ＦｅＯの化学式におい
て、ｎ＝２に相当し、Ｙｂ３＋の代わりにＩｎ’“を、
Ｐｅ”の代わりにＡＩ’＋を、Ｆｅ”＋の代わりにＭｇ
ｚ４を置きかえた新規な化合物を提供するにある。Purpose of the Invention The present invention provides (YbFeOz), which corresponds to n=2 in the chemical formula of FeO, and In'" instead of Yb3+,
AI'+ instead of Pe", Mg instead of Fe"+
An object of the present invention is to provide a novel compound that replaces z4.
発明の構成
本発明の化合物はＩｎＡＩＭｇｚＯｓで示される化合物
は、イオン結晶モデルではＩｎ” （Ａｌ” Ｍｇ”）
Ｍｇ” Ｏｓ！−トＬ テ記述され、その構造は、Ｉｎ
Ｏ＋、ｓ層、 （ＡＩ、 Ｍｇ）Ｏｘ、 ｓ層及びＭｇ
Ｏ層の積層によって形成されており、著しい構造異方性
を持つことがその特徴の一つである。Ｍ ｇ Ｚ−イオ
ンの半数はＡｌ”と共に（ＡＩ 、 Ｍｇ）０□、３層
を作り、残りの半数はＭｇＯ層を作っている。六方晶系
としての格子定数は以下の通りである。Structure of the Invention The compound of the present invention is represented by InAIMgzOs, which is In''(Al''Mg'') in the ionic crystal model.
Mg”Os!-T was described and its structure was In
O+, s-layer, (AI, Mg)Ox, s-layer and Mg
It is formed by stacking O layers, and one of its characteristics is that it has significant structural anisotropy. Half of the MgZ-ions together with Al'' form three layers (AI, Mg)0□, and the remaining half form an MgO layer.The lattice constants as a hexagonal system are as follows.
ａ ＝３．２８７ ± ０．００１ （人）ｃ ＝
２１．８１ ± ０．０１ （人）この化合物の
面指数（ｈｋｊ７）、面間隔（ｄ（人））（ｄ、は実測
値、ｄｅは計算値を示す〕およびＸ″４ｉＡに対する相
対反射強度（１％）を表−２に示す。a = 3.287 ± 0.001 (person) c =
21.81 ± 0.01 (person) Planar index (hkj7), plane spacing (d (person)) (d is the measured value, de is the calculated value) of this compound, and relative reflection intensity with respect to X″4iA ( 1%) are shown in Table 2.
この化合物は光機能材料、半導体材料、触媒材料として
有用なものである。This compound is useful as an optical functional material, a semiconductor material, and a catalyst material.
この化合物は以下の方法によって製造し得られる。This compound can be produced by the following method.
金属インジウムあるいは酸化インジウムもしくは加熱に
より酸化インジウムに分解される化合物と、金属アルミ
ニウムあるいは酸化アルミニウムもしくは加熱により酸
化アルミニウムに分解される化合物と、金属マグネシウ
ムあるいは酸化マグネシウムもしくは加熱により酸化マ
グネシウムに分解される化合物とを、インジウム、アル
ミニウム及びマグネシウムの割合が原子比で１対１対２
になるように混合して、該温合物を６００℃以上のもと
で、大気中、酸化性雰囲気中あるいはインジウム及びア
ルミニウムが各々３価イオン状態、マグネシウムが２価
イオン状態より還元されない程度の還元雰囲気中で加熱
することにより製造し得られる。Indium metal or indium oxide or a compound that decomposes into indium oxide when heated; Aluminum metal or aluminum oxide or a compound that decomposes into aluminum oxide when heated; Magnesium metal or magnesium oxide or a compound that decomposes into magnesium oxide when heated. , the atomic ratio of indium, aluminum and magnesium is 1:1:2
The heated mixture is heated at 600°C or higher in the air, in an oxidizing atmosphere, or in a state where indium and aluminum are each in a trivalent ion state, and magnesium is in a divalent ion state. It can be produced by heating in a reducing atmosphere.
本発明に用いる出発物質は市販の物をそのまま使用して
もよいが、化学反応を速やかに進行させるためには粒径
が小さい方がよく、特に１０μｍ以下であることが好ま
しい。また光機能材料、半導体材料として用いる場合に
は不純物の混入をきらうので、純度の高い物が好ましい
。この原料をそのままあるいはアルコール類もしくはア
セトンと共に充分混合する。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, the particle size is preferably small, particularly preferably 10 μm or less. Furthermore, when used as an optical functional material or a semiconductor material, it is preferable to use a material with high purity since contamination with impurities is avoided. This raw material is thoroughly mixed as it is or with an alcohol or acetone.
これらの混合割合は、Ｉｎ、 ＡＩ、及びＭｇの割合が
原子比で１対１対２の割合である。この割合がはずれる
と目的とする化合物の単−相が得られない。The mixing ratio of these is such that the atomic ratio of In, AI, and Mg is 1:1:2. If this ratio is off, a single phase of the target compound cannot be obtained.
この温合物を大気中あるいは酸化性雰囲気中もしくはＩ
ｎ及びＡＩが各々３価イオン状ｆＬｉ、 Ｍｇが２価イ
オン状態から還元され得ない程度の還元雰囲気中で６０
０℃以上で加熱する。加熱時間は数時間もしくはそれ以
上である。加熱の際の昇温速度に制約はない。加熱終了
後Ｏ℃に急冷するかあるいは大気中に急激に引き出せば
よい。得られた化合物の粉末は無色で、粉末Ｘ線回折法
によると結晶構造を有することがわかった。その結晶構
造は層状構造であり、ＩｎＯ＋、ｓ層、 （ＡＩ、’
Ｍｇ）Ｏｚ、ｓ層、及びＭｇＯ層の積み重ねによって
形成されている。This heated mixture is stored in the air, in an oxidizing atmosphere, or in an I
60 in a reducing atmosphere where n and AI are each trivalent ionic fLi and Mg cannot be reduced from the divalent ionic state.
Heat above 0°C. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The powder of the obtained compound was colorless and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is a layered structure, with InO+, s layer, (AI,'
It is formed by stacking Mg)Oz, s layer, and MgO layer.
実施例
純度９９．９９１％以上のインジウム（ＩｎｚＯ＊）粉
末。Example Indium (InzO*) powder with a purity of 99.991% or more.
純度９９．９％以上の酸化アルミニウム（ＡＩｔｏ：ｌ
）粉末。Aluminum oxide (AIto:l) with a purity of 99.9% or more
) powder.
および試薬特級の酸化マグネシウム（ＭｇＯ）粉末をモ
ル比で１対１対４の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約３０分間部合し、平均粒径数μｍの
微粉状温合物を得た。該温合物を白金管内に封入し、１
３００℃に設定された管状シリコニット炉内に入れ３日
間加熱し、その後、試料を炉外にとりだし、室温まで急
速に冷却した。得られた試料はＩｎＡＩＭｇｚＯｓの単
−相であり、粉末Ｘ線回折法によって、各反射の面間隔
（ｄｏ）及び相対反射強度を測定した結果は表−２の通
りであった。Weighed reagent-grade magnesium oxide (MgO) powder at a molar ratio of 1:1:4, added ethanol in an agate mortar, and mixed for about 30 minutes to form a fine powder with an average particle size of several μm. I got a compound. The heated mixture was sealed in a platinum tube, and 1
The sample was placed in a tubular siliconite furnace set at 300° C. and heated for 3 days, and then taken out of the furnace and rapidly cooled to room temperature. The obtained sample was a single-phase InAIMgzOs, and the interplanar spacing (do) and relative reflection intensity of each reflection were measured by powder X-ray diffraction method, and the results are shown in Table 2.
六方晶系としての格子定数は
ａ ＝３．２８７ ±０．００１ （人）Ｃ＝２１
．８１ ±０．０１ （人）であった。The lattice constant as a hexagonal crystal system is a = 3.287 ±0.001 (person) C = 21
．． 81 ±0.01 (persons).
上記の格子定数および表−２の面指数（ｈ ｋ ／）よ
り算出した面間隔（ｄｃ（人））は、実測の面間隔（ｄ
ｏ（人））と極めてよく一致している。The planar spacing (dc (people)) calculated from the above lattice constant and the planar index (h k /) in Table 2 is the measured planar spacing (d
o (person)).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供した優れた効果を有する。Effects of the Invention The present invention has the excellent effect of providing a novel compound useful as an optical functional material, a semiconductor material, and a catalyst.
特許出願人 科学技術庁無機材質研究所製部 高
信 雄
手 続 補 正 書
昭和（１年 ２月ｔ７日Patent applicant Takao, Science and Technology Agency, Inorganic Materials Research Institute, Production Department
Shin Yute Zoku Amendsho Showa (February t7, 1st year)
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by InAlMg_2O_5.
加熱により酸化インジウムに分解される化合物と、金属
アルミニウムあるいは酸化アルミニウムもしくは加熱に
より酸化アルミニウムに分解される化合物と、金属マグ
ネシウムあるいは酸化マグネシウムもしくは加熱により
酸化マグネシウムに分解される化合物とを、インジウム
、アルミニウム及びマグネシウムの割合が原子比で１対
１対２になるように混合して、該温合物を６００℃以上
のもとで、大気中、酸化性雰囲気中あるいはインジウム
及びアルミニウムが各々３価イオン状態、マグネシウム
が２価イオン状態より還元されない程度の還元雰囲気中
で加熱することを特徴とするＩｎＡｌＭｇ＿２Ｏ＿５で
示され六方晶系の層状構造を有する化合物の製造法。(2) Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic aluminum or aluminum oxide or a compound that decomposes into aluminum oxide when heated; and Metallic magnesium or magnesium oxide or a compound that decomposes into magnesium oxide when heated. The mixture is mixed with a compound such that the atomic ratio of indium, aluminum and magnesium is 1:1:2, and the mixture is heated at 600°C or higher in the air, in an oxidizing atmosphere, or in an oxidizing atmosphere. A method for producing a compound represented by InAlMg_2O_5 and having a hexagonal layered structure, characterized in that indium and aluminum are heated in a reducing atmosphere to the extent that indium and aluminum are not reduced to a trivalent ion state, and magnesium is not reduced to a divalent ion state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1891887A JPH0244241B2 (en) | 1987-01-29 | 1987-01-29 | INALMG2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1891887A JPH0244241B2 (en) | 1987-01-29 | 1987-01-29 | INALMG2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63185816A true JPS63185816A (en) | 1988-08-01 |
| JPH0244241B2 JPH0244241B2 (en) | 1990-10-03 |
Family
ID=11984994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1891887A Expired - Lifetime JPH0244241B2 (en) | 1987-01-29 | 1987-01-29 | INALMG2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244241B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104446381A (en) * | 2014-11-09 | 2015-03-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic InAlMg7O10 and preparation method thereof |
-
1987
- 1987-01-29 JP JP1891887A patent/JPH0244241B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104446381A (en) * | 2014-11-09 | 2015-03-25 | 桂林理工大学 | Ultralow-dielectric-constant microwave dielectric ceramic InAlMg7O10 and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0244241B2 (en) | 1990-10-03 |
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Legal Events
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |