JPS63256528A - Compound having hexagonal layer structure represented by ybfezn6o9 and production thereof - Google Patents

Compound having hexagonal layer structure represented by ybfezn6o9 and production thereof

Info

Publication number
JPS63256528A
JPS63256528A JP9136187A JP9136187A JPS63256528A JP S63256528 A JPS63256528 A JP S63256528A JP 9136187 A JP9136187 A JP 9136187A JP 9136187 A JP9136187 A JP 9136187A JP S63256528 A JPS63256528 A JP S63256528A
Authority
JP
Japan
Prior art keywords
compound
compd
heated
layer structure
structure represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9136187A
Other languages
Japanese (ja)
Other versions
JPH0361611B2 (en
Inventor
Noboru Kimizuka
昇 君塚
Naohiko Mori
毛利 尚彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP9136187A priority Critical patent/JPS63256528A/en
Publication of JPS63256528A publication Critical patent/JPS63256528A/en
Publication of JPH0361611B2 publication Critical patent/JPH0361611B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a novel compd. useful as a magnetic material, a semiconductor material and a catalyst by providing a compsn. consisting of Yb, Fe, Zn and O in a prescribed atomic ratio and a hexagonal layer structure. CONSTITUTION:A compd. of this invention has a hexagonal layer structure represented by a formula YbFeZn6O9. The ionic crystal model of the compd. is represented by Yb<2+>(Fe<3+>, Zn<2+>)Zn5<2+>O9<2->. The structure is formed by laminating YbO1.5, (Fe, Zn)O2.5 and ZnO layers and one of the characteristics of the compd. is its remarkable structural anisotropy. In the structure, one sixth of the Zn<2+> ions form (Fe<3+>, Zn<2+>)O2.5 layers with Fe<3+> and the remaining five sixths form ZnO layers. The compd. may be utilized as a magnetic body, a semiconductor and a catalytic substance each having highly anisotropic two-dimensional properties.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は磁性材料、半導体材料、触媒材料等として有用
な新規化合物であるYbFeZn60wで示される六方
晶系の層状構造を有する化合物およびその製造法に関す
る。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a compound having a hexagonal layered structure represented by YbFeZn60w, which is a new compound useful as a magnetic material, a semiconductor material, a catalyst material, etc., and a method for producing the same.

従来技術 従来、(Yb”Feゴ0z)nFe”O(nは整数を示
す)で示される六方晶系の層状構造を有する化合物は本
出願人によって合成され知られている。
BACKGROUND OF THE INVENTION Conventionally, a compound having a hexagonal layered structure represented by (Yb"FeGOZ)nFe"O (n is an integer) was synthesized by the present applicant and is known.

YbFezOn+YbtFezOv、 YbFe0z。YbFezOn+YbtFezOv, YbFe0z.

及びYbnFe50+zの六方晶系としての格子定数、
YbO+、s層、 FeO+、s層、 FezO□、2
層の単位格子内における層数を示すと表−1の通りであ
る。
and the lattice constant of YbnFe50+z as a hexagonal system,
YbO+, s layer, FeO+, s layer, FezO□, 2
Table 1 shows the number of layers in a unit cell of layers.

これらの化合物は酸化鉄(FeO)1モルに対して、Y
bFe0zがnモル(n=1.2.3−)の割合で化合
していると考えられる層状構造を持つ化合物である。
These compounds contain Y per 1 mole of iron oxide (FeO).
It is a compound having a layered structure in which bFe0z is combined at a ratio of n moles (n=1.2.3-).

発明の目的 本発明は(YbFeOs)−FeOの化学式において、
n=176に相当し、Fe”の代わりにZn”″を置き
かえて得られた新規な化合物を提供するにある。
Purpose of the Invention The present invention relates to the chemical formula (YbFeOs)-FeO,
The object of the present invention is to provide a novel compound corresponding to n=176 and obtained by replacing Zn'' in place of Fe''.

発明の構成 本発明のYbFeZn60qで示される化合物は、イオ
ン結晶モデルでは、Yb”(Fe” 、Zn”)Zn5
”″09′−として記載され、その構造はYbO+、s
層、(Pe。
Structure of the Invention In the ionic crystal model, the compound represented by YbFeZn60q of the present invention is Yb''(Fe'', Zn'')Zn5
""09'-, its structure is YbO+, s
layer, (Pe.

Zn)0□、3層およびZnO層の積層によって形成さ
れており、著しい構造異方性を持つことがその特徴の一
つである。 Zn”+イオンの176はFe’+と共に
(Fe”、 Zn”″)(h、s層を作り、残りの57
6はZnO層を作っている。六方晶系としての格子定数
は次の通りである。
It is formed by laminating three layers of Zn)0□ and a ZnO layer, and one of its characteristics is that it has significant structural anisotropy. 176 of the Zn"+ ions together with Fe'+ form the (Fe", Zn"") (h, s layer, and the remaining 57
6 makes a ZnO layer. The lattice constants as a hexagonal crystal system are as follows.

a =3.310 ±0.001  (人)c =42
.92 ±0.01  (人)この化合物の面指数(h
kl)、面間隔(d(人))(d、は実測値、dcは計
算値を示す)およびX線に対する相対反射強度(I(%
))を示すと表−2通りである。
a = 3.310 ±0.001 (person) c = 42
.. 92 ±0.01 (person) Surface index of this compound (h
kl), interplanar spacing (d (person)) (d is the measured value, dc is the calculated value), and relative reflection intensity for X-rays (I (%
)) is shown in Table 2.

この化合物は磁性材料、半導体材料および触媒材料とし
て有用なものである。例えば、異方性の強い2次元的性
質を持つ磁性体・半導体および触媒物質としての利用の
可能性が考えられる。
This compound is useful as a magnetic material, a semiconductor material, and a catalytic material. For example, it is possible to use them as magnetic materials, semiconductors, and catalyst materials that have two-dimensional properties with strong anisotropy.

この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.

金属イッテルビウムあるいは酸化イッテルビウムもしく
は加熱により酸化イッテルビウムに分解される化合物と
、金属鉄あるいは酸化鉄もしくは加熱により酸化鉄に分
解される化合物と、金属亜鉛あるいは酸化亜鉛もしくは
加熱により酸化亜鉛に分解される化合物とを、Yb、 
FeおよびZnの割合が原子比で1対1対6の割合で混
合し、該混合物を700℃以上の温度で、大気中、酸化
性雰囲気中あるいはYbおよびFeが各々3価イオン状
Q、Znが2価イオン状態より還元されない還元雰囲気
中で加熱することによって製造し得られる。
Metallic ytterbium or ytterbium oxide or a compound that decomposes into ytterbium oxide when heated; Metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. , Yb,
Fe and Zn are mixed at an atomic ratio of 1:1:6, and the mixture is heated at a temperature of 700°C or higher in the air, in an oxidizing atmosphere, or when Yb and Fe are in the form of trivalent ionic Q, Zn, respectively. can be produced by heating in a reducing atmosphere in which it is not reduced from a divalent ion state.

本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよ(、特に10μm以下であることが好
ましい。
Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size (particularly preferably 10 μm or less).

また、磁性材料、半導体材料として用いる場合には不純
物の混入をきらうので、純度の高いことが好ましい。出
発物質が加熱により金属酸化物を得る化合物としては、
それぞれの金属の水酸化物。
Further, when used as a magnetic material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided. Compounds whose starting materials yield metal oxides by heating include:
hydroxide of each metal.

炭酸塩、硝酸塩等が挙げられる。Examples include carbonates and nitrates.

原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。
The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.

原料の混合割合は、Yb、 Fe、およびZnの割合が
原子比で1対1対6の割合であることが必要である。こ
れをはずすと目的とする化合物の単−相を得ることがで
きない。
The mixing ratio of the raw materials must be such that the atomic ratio of Yb, Fe, and Zn is 1:1:6. If this is removed, a single phase of the target compound cannot be obtained.

この混合物を大気中、酸化性雰囲気中あるいはYbおよ
びFeが各々3価イオン状[7,Znが2価イオン状態
から還元されない還元雰囲気中で600℃以上で加熱す
る。加熱時間は数時間もしくはそれ以上である。加熱の
際の昇温速度には制約はない。
This mixture is heated at 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Yb and Fe are not reduced from the trivalent ionic state [7, and Zn is not reduced from the divalent ionic state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating.

加熱終了後急冷するか、あるいは大気中に急激に引き出
せばよい。
After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere.

得られたYbFeZn60g ’化合物の粉末は褐色で
あり、粉末X線回折法によって結晶構造を有することが
分かった。その結晶構造は層状構造であり、YbO+、
s層、 (Fe、 Zn)Oz、s層、およびZnO層
の積み重ねによって形成されていることが分かった。
The obtained YbFeZn60g' compound powder was brown in color and was found to have a crystal structure by powder X-ray diffraction. Its crystal structure is a layered structure, with YbO+,
It was found that it is formed by stacking an s layer, (Fe, Zn)Oz, s layer, and ZnO layer.

実施例 純度99.99%以上の酸化イッテルビウム(Yb、0
3)粉末、純度99.9%以上の酸化鉄(Fezes)
粉末、および試薬特級の酸化亜鉛(ZnO)粉末をモル
比で1対1対12の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約30分間部合し、平均粒径数μmの
微粉末混合物を得た。該混合物を白金管内に封入し、1
450℃に設定された管状シリコニット炉内に入れ5日
間加熱し、その後、試料を炉外にとりだし室温まで急速
に冷却した。
Examples Ytterbium oxide (Yb, 0
3) Powder, iron oxide with a purity of 99.9% or more (Fezes)
Powder and reagent-grade zinc oxide (ZnO) powder were weighed at a molar ratio of 1:1:12, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to form fine particles with an average particle size of several μm. A powder mixture was obtained. The mixture was sealed in a platinum tube, and 1
The sample was placed in a tubular siliconite furnace set at 450°C and heated for 5 days, and then taken out of the furnace and rapidly cooled to room temperature.

得られた試料は、YbFeZn、0.の単−相であり、
粉末X線回折法によって、各面指数(hkf)。
The obtained sample was YbFeZn, 0. is single-phase,
Each plane index (hkf) was determined by powder X-ray diffraction method.

面間隔(do)および相対反射強度を測定した結果は表
−2の通りであった。
The results of measuring the interplanar spacing (do) and relative reflection intensity are shown in Table 2.

六方晶系としての格子定数は a =3.310  ±0.001 (人)C=42.
92  ±0.01  (人)であった。
The lattice constant as a hexagonal crystal system is a = 3.310 ±0.001 (person) C = 42.
92 ±0.01 (persons).

上記の格子定数および表−2の面指数(h k/)より
算出した面間隔(dc(人))は、実測の面間隔(d。
The interplanar spacing (dc (people)) calculated from the above lattice constant and the planar index (h k/) in Table 2 is the actually measured interplanar spacing (d).

(人))と極めてよく一致している。(person)).

発明の効果 本発明は磁性材料、半導体材料及び触媒として有用な新
規化合物を提供する。
Effects of the Invention The present invention provides novel compounds useful as magnetic materials, semiconductor materials, and catalysts.

Claims (2)

【特許請求の範囲】[Claims] (1)YbFeZn_6O_9で示される六方晶系の層
状構造を有する化合物。
(1) A compound having a hexagonal layered structure represented by YbFeZn_6O_9.
(2)金属イッテルビウムあるいは酸化イッテルビウム
もしくは加熱により酸化イッテルビウムに分解される化
合物と、金属鉄あるいは酸化鉄もしくは加熱により酸化
鉄に分解される化合物と、金属亜鉛あるいは酸化亜鉛も
しくは加熱により酸化亜鉛に分解される化合物とを、Y
b、FeおよびZnの割合が原子比で1対1対6の割合
で混合し、該混合物を700℃以上の温度で大気中、酸
化性雰囲気中あるいはYbおよびFeが各々3価イオン
状態、Znが2価イオン状態より還元されない還元雰囲
気中で加熱することを特徴とするYbFeZn_6O_
9で示される六方晶系の層状構造を有する化合物の製造
法。
(2) Metallic ytterbium or ytterbium oxide or a compound that decomposes into ytterbium oxide when heated; Metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. Y
b, Fe and Zn are mixed in an atomic ratio of 1:1:6, and the mixture is heated at a temperature of 700°C or higher in the air, in an oxidizing atmosphere, or in a state where Yb and Fe are each in a trivalent ion state, and Zn YbFeZn_6O_, which is heated in a reducing atmosphere where it is not reduced beyond the divalent ion state.
A method for producing a compound having a hexagonal layered structure represented by 9.
JP9136187A 1987-04-14 1987-04-14 Compound having hexagonal layer structure represented by ybfezn6o9 and production thereof Granted JPS63256528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9136187A JPS63256528A (en) 1987-04-14 1987-04-14 Compound having hexagonal layer structure represented by ybfezn6o9 and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9136187A JPS63256528A (en) 1987-04-14 1987-04-14 Compound having hexagonal layer structure represented by ybfezn6o9 and production thereof

Publications (2)

Publication Number Publication Date
JPS63256528A true JPS63256528A (en) 1988-10-24
JPH0361611B2 JPH0361611B2 (en) 1991-09-20

Family

ID=14024244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9136187A Granted JPS63256528A (en) 1987-04-14 1987-04-14 Compound having hexagonal layer structure represented by ybfezn6o9 and production thereof

Country Status (1)

Country Link
JP (1) JPS63256528A (en)

Also Published As

Publication number Publication date
JPH0361611B2 (en) 1991-09-20

Similar Documents

Publication Publication Date Title
JPS63210023A (en) Compound having laminar structure of hexagonal crystal system expressed by ingazn4o7 and its production
JPS63210024A (en) Compound having laminar structure of hexagonal crystal system expressed by ingazn5o8 and its production
JPS63256531A (en) Compound having hexagonal layer structure represented by infezn4o7 and production thereof
JPS63256528A (en) Compound having hexagonal layer structure represented by ybfezn6o9 and production thereof
JPS63256530A (en) Compound having hexagonal layer structure represented by infezn6o9 and production thereof
JPS63265825A (en) Compound having hexagonal laminar structure expressed by infezn3o6 and its production
JPS63265824A (en) Compound having hexagonal laminar structure expressed by infezn5o8 and its production
JPS63256534A (en) Compound having hexagonal layer structure represented by tmfezn6o9 and production thereof
JPS63256532A (en) Compound having hexagonal layer structure represented by lufezn4o7 and production thereof
JPS63260823A (en) Compound having hexagonal layer structure expressed by lufezn6o9 and production thereof
JPS63265826A (en) Compound having hexagonal laminar structure expressed by infezn7o10 and its production
JPS63295434A (en) Compound shown by lufezn9o12 and having hexagonal lamellar structure and its production
JPS63256533A (en) Compound having hexagonal layer structure represented by scfezn5o8 and production thereof
JPS63195127A (en) Compound having hexagonal lamellar structure expressed by ybfezn2o5 and production thereof
JPS63210030A (en) Compound having hexagonal laminar structure shown in scfezn3o6 and production thereof
JPH0435415B2 (en)
JPS63256529A (en) Compound having hexagonal layer structure represented by lufezn5o8 and production thereof
JPS63277519A (en) Compound having hexagonal layer structure expressed by tmfezn9o12 and production thereof
JPH0338212B2 (en)
JPH0360778B2 (en)
JPS63256521A (en) Compound having hexagonal layer structure represented by inalzn4o7 and production thereof
JPS63256520A (en) Compound having hexagonal layer structure represented by scalzn5o8 and production thereof
JPS63277522A (en) Compound having hexagonal layer structure expressed by infezn8o11 and production thereof
JPS63295432A (en) Compound shown by infezn9o12 and having hexagonal lamellar structure and its production
JPS63256522A (en) Compound having hexagonal layer structure represented by scfezn7o10 and production thereof

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term