JPS63256524A - Compound having hexagonal layer structure represented by lugazn4o7 and production thereof - Google Patents
Compound having hexagonal layer structure represented by lugazn4o7 and production thereofInfo
- Publication number
- JPS63256524A JPS63256524A JP9257487A JP9257487A JPS63256524A JP S63256524 A JPS63256524 A JP S63256524A JP 9257487 A JP9257487 A JP 9257487A JP 9257487 A JP9257487 A JP 9257487A JP S63256524 A JPS63256524 A JP S63256524A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- oxide
- heating
- decomposed
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011701 zinc Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
- 239000011787 zinc oxide Substances 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 229910003443 lutetium oxide Inorganic materials 0.000 claims abstract description 8
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料および触媒材料として
有用な新規化合物であるＬｕＧａＺｎ４Ｏ７で示される
六方晶系の層状構造を有する化合物およびその製造法に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by LuGaZn4O7, which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and a method for producing the same.
従来技術
従来、（Ｙｂ”Ｆｅ”０．）Ｉ、Ｆｅ”Ｏ（ｎは整数を
表わす）で示される六方晶系の層状構造を有する化合物
は本出願人によって合成され知られている。Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb"Fe"0.)I, Fe"O (n represents an integer) was synthesized by the present applicant and is known.
ＹｂＦｅｚＯｎ、Ｙｂ２Ｆｅ＋Ｏｙ、 ＹｂＪｅ４Ｏ＋
ｏ及びＹｂ４ＦｅｓＯ＋ａの六方晶系としての格子定数
、Ｙｂ０１，５Ｊｉｉ、 ＦｅＯ＋、ｓ層、 ＦｅｚＯ
ｚ、ｓ層の単位格子内における層数を示すと表−１の通
りである。YbFezOn, Yb2Fe+Oy, YbJe4O+
Lattice constant of o and Yb4FesO+a as hexagonal system, Yb01,5Jii, FeO+, s layer, FezO
Table 1 shows the number of layers in the unit cell of the z and s layers.
これらの化合物は酸化鉄１モルに対して、ＹｂＦｅ０．
がｎモルの割合で化合していると考えられる層状構造を
持つ化合物である。These compounds contain YbFe0.
It is a compound with a layered structure that is thought to be combined at a ratio of n moles.
発明の目的
本発明は（ＹｂＦｅＯ：＋） ｎＦｅｏの化学式におい
て、ｎ＝１／４に相当し、Ｙｂ３＋の代わりにＬｕ３＋
を、Ｆｅ”の代わりにＧａ’＋を、Ｆｅ”の代わりにＺ
ｎ”＋を置きかえて得られた新規化合物を提供するにあ
る。Purpose of the Invention The present invention provides (YbFeO:+) In the chemical formula of nFeo, n = 1/4, and Lu3+ is used instead of Yb3+.
, Ga'+ instead of Fe'', Z instead of Fe''
The object of the present invention is to provide a novel compound obtained by replacing n''+.
発明の構成
本発明のＬｕＧａＺｎ４Ｏｔで示される化合物は、イオ
ン結晶モデルではＬｕ”（Ｇａ”、Ｚｎ”）Ｚｎ３”０
７！−とじて記載され、その構造はＬｕＯ＋、５層 （
Ｇａ ２ ＋。Structure of the Invention In the ionic crystal model, the compound represented by LuGaZn4Ot of the present invention is Lu''(Ga'', Zn'')Zn3''0
7! - and its structure is LuO+, 5 layers (
Ga2+.
Ｚｎ”） Ｏ□、６層およびＺｎＯ層の積層によって形
成されており、著しい構造異方性を持つことがその特徴
の一つである。Ｚｎ”イオン数の１７４はＧａ ３４と
共に（Ｇａ”、 Ｚｎ”つ０□、３層を作り、残りの３
７４はＺｎＯ層を作っている。六方晶系としての格子定
数は次の通りである。It is formed by laminating 6 layers of Zn'') O□ and ZnO, and one of its characteristics is that it has remarkable structural anisotropy. Zn” 0□, make 3 layers, and the remaining 3
74 makes a ZnO layer. The lattice constants as a hexagonal crystal system are as follows.
ａ ＝３．３２８ ±０．００１ （人）ｃ ＝３２
．４５ ±０．０１ （人）この化合物の面指数（
ｈｋβ）９面間隔（ｄ（人））。a = 3.328 ±0.001 (person) c = 32
．． 45 ±0.01 (person) Surface index of this compound (
hkβ) 9-plane spacing (d (person)).
（ｄ、は実測値、ｄｃは計算値を示す〕およびＸ線に対
する相対反射強度（１％）を示すと表−２の通りである
。(d is an actual measured value, dc is a calculated value) and the relative reflection intensity (1%) for X-rays is shown in Table 2.
この化合物は光機能材料、半導体材料、触媒材料等に有
用なものである。This compound is useful for optical functional materials, semiconductor materials, catalyst materials, etc.
この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.
金属ルテチウムあるいは酸化ルテチウムもしくは加熱に
より酸化ルテチウムに分解される化合物と、金属ガリウ
ムあるいは酸化ガリウムもしくは加熱により酸化ガリウ
ムに分解される化合物と、金属亜鉛あるいは酸化亜鉛も
しくは加熱により酸化亜鉛に分解される化合物とを、Ｌ
ｕ、 ＧａおよびＺｎの割合が原子比で１対１対４の割
合で混合し、該混合物を６５０℃以上の温度で、大気中
、酸化性雰囲気中あるいはＬｕおよびＧａが各“々３価
イオン状態、Ｚｎが２価イオン状態より還元されない還
元雰囲気中で加熱することによって製造し得られる。Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating; Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating. ,L
U, Ga, and Zn are mixed in an atomic ratio of 1:1:4, and the mixture is heated at a temperature of 650° C. or higher in the air, in an oxidizing atmosphere, or when Lu and Ga are each trivalent ions. Zn is produced by heating in a reducing atmosphere in which Zn is not reduced from the divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に１０μｍ以下であることが好
ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size, particularly preferably 10 μm or less.
また光機能材料、半導体材料として用いる場合には不純
物の混入をきらうので、純度の高いことが好ましい。出
発物質が加熱により金属酸化物を得る化合物としては、
それぞれの金属の水酸化物。Furthermore, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided. Compounds whose starting materials yield metal oxides by heating include:
hydroxide of each metal.
炭酸塩、硝酸塩等が挙げられる。Examples include carbonates and nitrates.
原料はそのまま、あるいはアルコール類、アセトン等と
共に十分に混合する。The raw materials are thoroughly mixed as is or together with alcohols, acetone, etc.
原料の混合割合は、Ｌｕ、 Ｇａ、およびＺｎの割合が
原子比で１対１対４Ｏ割合であることが必要である。こ
れをはずすと目的とする化合物の単−相を得ることがで
きない。The mixing ratio of the raw materials needs to be such that the atomic ratio of Lu, Ga, and Zn is 1:1:4O. If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはＬｕおよ
びＧａが各々３価イオン状態、 Ｚｎが２価イオン状態
から還元されない還元雰囲気中で６５０℃以上のもとで
加熱する。加熱時間は数時間もしくはそれ以上である。This mixture is heated at 650° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Lu and Ga are not reduced from their respective trivalent ion states and Zn from their divalent ion state. Heating time is several hours or more.
加熱の際の昇温速度には制約はない。加熱終了後急冷す
るか、あるいは大気中に急激に引き出せばよい。There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere.
得られたＬｕＧａＺｎ４Ｏ７化合物の粉末は無色であり
、粉末Ｘ線回折法によって結晶構造を有することが分か
った。その結晶構造は層状構造であり、ＬｕＯ＋、ｓｌ
、 （Ｇａ、 Ｚｎ）Ｏｚ、ｓ層およびＺｎＯ層の積み
重ねによって形成されていることが分かった。The obtained LuGaZn4O7 compound powder was colorless and was found to have a crystal structure by powder X-ray diffraction. Its crystal structure is a layered structure, and LuO+, sl
, was found to be formed by stacking (Ga, Zn)Oz, s layer and ZnO layer.
実施例
純度９９．９９％以上の酸化ルテチウム（Ｌｕ２０３）
粉末、純度９９．９９％以上の酸化ガリウム（Ｇａｚｅ
３）粉末および試薬特級の酸化亜鉛（ＺｎＯ）粉末をモ
ル比で１対１対８の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約３０分間部合し、平均粒径数μｍの
微粉末混合物を得た。該混合物を白金管内に封入し、１
４５０℃に設定された管状シリコニット炉内に入れ、３
日間加熱し、その後、試料を炉外にとりだし室温まで急
速に冷却した。得られた試料はＬｕＧａＺｒ＋４Ｏ７単
−相であった。粉末Ｘ線回折法によって面指数（ｈｋｆ
ｆｉ）、面間隔（ｄｏ）および相対反射強度（１％）を
測定した。その結果は表−２の通りであった。Example Lutetium oxide (Lu203) with a purity of 99.99% or more
Powder, gallium oxide (Gaze) with a purity of 99.99% or more
3) Powder and reagent-grade zinc oxide (ZnO) powder were weighed at a molar ratio of 1:1:8, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to form a powder with an average particle size of several μm. A fine powder mixture was obtained. The mixture was sealed in a platinum tube, and 1
Placed in a tubular siliconite furnace set at 450°C,
After heating for one day, the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was a single phase of LuGaZr+4O7. The surface index (hkf
fi), interplanar spacing (do) and relative reflection intensity (1%) were measured. The results were as shown in Table-2.
六方晶系としての格子定数は
ａ ＝３．３２８ ±０．００１ （人）ｃ ＝３２
．４５ ±０．０１ （人）であった。The lattice constant as a hexagonal crystal system is a = 3.328 ±0.001 (person) c = 32
．． 45 ±0.01 (persons).
上記の格子定数および表−２の面指数（ｈ ｋ ！りよ
り算出した面間隔（ｄｃ（人））は、実測の面間隔（ｄ
。The planar spacing (dc (people)) calculated from the above lattice constant and the planar index (h k !) in Table 2 is the actually measured planar spacing (d
.
（人））と極めてよく一致した。There was a very good agreement with (person).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供する。Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
Claims (2)
状構造を有する化合物。(1) A compound having a hexagonal layered structure represented by LuGaZn_4O_7.
加熱により酸化ルテチウムに分解される化合物と、金属
ガリウムあるいは酸化ガリウムもしくは加熱により酸化
ガリウムに分解される化合物と、金属亜鉛あるいは酸化
亜鉛もしくは加熱により酸化亜鉛に分解される化合物と
を、Ｌｕ、ＧａおよびＺｎの割合が原子比で１対１対４
の割合で混合し、該混合物を６５０℃以上の温度で大気
中、酸化性雰囲気中あるいはＬｕおよびＧａが各々３価
イオン状態、Ｚｎが２価イオン状態より還元されない還
元雰囲気中で加熱することを特徴とするＬｕＧａＺｎ＿
４Ｏ＿７で示される六方晶系の層状構造を有する化合物
の製造法。(2) Metallic lutetium or lutetium oxide or a compound that is decomposed into lutetium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating; and Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating. and the compound in which the atomic ratio of Lu, Ga and Zn is 1:1:4.
and heating the mixture at a temperature of 650° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Lu and Ga are each in a trivalent ion state and Zn is not reduced in a divalent ion state. Features of LuGaZn_
A method for producing a compound having a hexagonal layered structure represented by 4O_7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9257487A JPS63256524A (en) | 1987-04-15 | 1987-04-15 | Compound having hexagonal layer structure represented by lugazn4o7 and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9257487A JPS63256524A (en) | 1987-04-15 | 1987-04-15 | Compound having hexagonal layer structure represented by lugazn4o7 and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63256524A true JPS63256524A (en) | 1988-10-24 |
| JPH0348135B2 JPH0348135B2 (en) | 1991-07-23 |
Family
ID=14058197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9257487A Granted JPS63256524A (en) | 1987-04-15 | 1987-04-15 | Compound having hexagonal layer structure represented by lugazn4o7 and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63256524A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606889A (en) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | Manufactur of scintillation type detector for x-ray ct device |
-
1987
- 1987-04-15 JP JP9257487A patent/JPS63256524A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606889A (en) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | Manufactur of scintillation type detector for x-ray ct device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0348135B2 (en) | 1991-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |