JPS63295425A - Compound shown by tmgazn7o10 and having hexagonal lamellar strucuture and its production - Google Patents
Compound shown by tmgazn7o10 and having hexagonal lamellar strucuture and its productionInfo
- Publication number
- JPS63295425A JPS63295425A JP12906587A JP12906587A JPS63295425A JP S63295425 A JPS63295425 A JP S63295425A JP 12906587 A JP12906587 A JP 12906587A JP 12906587 A JP12906587 A JP 12906587A JP S63295425 A JPS63295425 A JP S63295425A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- compound
- metallic
- heated
- thulium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011701 zinc Substances 0.000 claims abstract description 17
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 8
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000003054 catalyst Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 239000000843 powder Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用公費
本発明は光機能材料、半導体材料及び触媒材料として有
用な新規化合物である丁ｗａＧａＺｎ１６＠。で示され
る六方晶系の層状構造を有する化合物およびその製造法
ｔこ関する。DETAILED DESCRIPTION OF THE INVENTION Industrial Application Public Fund The present invention is directed to GaZn16@, a novel compound useful as an optical functional material, a semiconductor material, and a catalyst material. The present invention relates to a compound having a hexagonal layered structure represented by and a method for producing the same.
従来技術
従来、（マｂ”Ｆｅ”６Ｂ）１Ｆｅ”ｅ）（ｎは整数を
示す）で示される六方晶系の層状構造を有する化合物は
本出願人によって合成され知られている。BACKGROUND OF THE INVENTION Conventionally, a compound having a hexagonal layered structure represented by (Mab"Fe"6B)1Fe"e) (n is an integer) was synthesized by the present applicant and is known.
！ｂＦ１１１６ａｐマｂｌＦｅ、６．、マｂｌＦｅ４６
１＠及びマｂ４Ｆ＠ｓｏｗｓの六方晶系としての格子定
数、マｂｅ、、、層、 Ｆｅｅｌｌ ｍ５層、 Ｉ”ｅ
、ｏ、 ｏｓ層の単位格子内における暦数を示すと表−
１の通りである。! bF1116apmablFe, 6. , MablFe46
1@ and Ma b4F@sows lattice constant as a hexagonal system, Mabe, , layer, Feel m5 layer, I”e
, o, os The table shows the calendar numbers in the unit cell of the os layer.
As per 1.
これらの化合物は酸化鉄（Ｆｅｅ） １モルに対して、
ＹｂＦｅ０．がｈモルの割合で化合していると考えられ
る層状構造を持つ化合物で−ある。These compounds are based on 1 mole of iron oxide (Fee),
YbFe0. It is a compound with a layered structure that is thought to be combined at a ratio of h moles.
発明の目的
本発明は（ＹｂＦｅ６．）、Ｆｅ６の化学式において、
ｎ＝ｌ／アに相当しＹｂ０の代わりにＴ−０をＦｅ”の
代わりにＣａ”を、Ｆｅ”の代わりにＺｎ峻を置きかえ
て得られる新規な化合物を提供するにある。Object of the Invention The present invention provides (YbFe6.), in the chemical formula of Fe6,
The object of the present invention is to provide a novel compound which corresponds to n=l/a and is obtained by replacing T-0 in place of Yb0, Ca' in place of Fe', and Zn in place of Fe'.
発明の構成
本発明のＴｍＧａＺｎｙ６＋。で示される化合物は、イ
オン結晶モデルでは、Ｔｓ”（Ｇａ”Ｚｎ″”）ｚｎ、
”ｏ、◎”−として記載され、その構造はＴｓＯｌ、５
層、 （Ｇａ”Ｚｎ”）ｅ１２，５層およびＺｎ０層
の積層によって形成されており、著しい構造異方性を持
っていることがその特徴の一つである。Ｚｎ”°のＩ／
７はＧａ”と共に（Ｇａ” 、Ｚｎ”）Ｑ＊ 、１層を
作り、残りの”／ｌはＺｎＯ層を作っている。六方晶系
としての格子定数は次の通りである。Constitution of the Invention TmGaZny6+ of the present invention. In the ionic crystal model, the compound represented by is Ts"(Ga"Zn"")zn,
It is described as "o, ◎"-, and its structure is TsOl, 5
It is formed by laminating a (Ga"Zn") e12,5 layer and a Zn0 layer, and one of its characteristics is that it has significant structural anisotropy. I/of Zn”°
7 forms one layer of (Ga", Zn")Q* with Ga", and the remaining "/1" forms a ZnO layer. The lattice constants as a hexagonal crystal system are as follows.
＊＝３．３００±０．００１（Ａ）
ｃ＝７２．１１±０．０１ （Ａ）この化合物の面
指数（ｈ ｋ ｔ ）、面間隔（ｄ（Ａ））（ｄＯは実
測値ｐ ｄＣは計算値を示す）およびＸ線に対する相対
反射強度（■ ％）を示すと表−２の通ゆである。*=3.300±0.001(A) c=72.11±0.01 (A) Planar index (h k t ), planar spacing (d(A)) of this compound (dO is the measured value p dC Table 2 shows the calculated values) and the relative reflection intensity (%) for X-rays.
この化合物は光機能材料、半導体材料および触媒材料等
に有用なものである。This compound is useful for optical functional materials, semiconductor materials, catalyst materials, and the like.
この化合物は次の方法によって製造し得られる。This compound can be produced by the following method.
金属ツリウムあるいは酸化ツリウムもしくは加熱により
酸化ツリウムに分解される化合物と、金属ガリウムある
いは酸化ガリウムもしくは加熱によゆ酸化ガリウムに分
解される化合物と、金属亜鉛あるいは酸化亜鉛もしくは
加熱により酸化亜鉛に分解されろ化合物と、Ｔｍ、 Ｇ
ａおよびＺｎの割合が原子比で１対１対７の割合で混合
し、該混合物を６００℃以上の温度で大気中、酸化性雰
囲気中あるいはＴｍおよびＧａが各々３価イオン状態、
Ｚｎが２価イオン状態より還元されない還元雰囲気中で
加熱することによって製造し得られる。Thulium metal or oxide or a compound that decomposes into thulium oxide when heated; gallium metal or gallium oxide or a compound that decomposes into gallium oxide when heated; and zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. compound, Tm, G
A and Zn are mixed in an atomic ratio of 1:1:7, and the mixture is heated at a temperature of 600° C. or higher in the air, in an oxidizing atmosphere, or in a state where Tm and Ga are each in a trivalent ion state,
It can be produced by heating in a reducing atmosphere in which Zn is not reduced from a divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に１０μｍ以下であることが好
ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed rapidly, it is better to have a smaller particle size, particularly preferably 10 μm or less.
また、光機能材料、半導体材料として用いる場合には不
純物の混入をきらうので、純度の高いことが好ましい。Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided.
出発物質が加熱により金属酸化物を得る化合物としては
、それぞれの金属の水酸化物、炭酸塩、硝酸塩等が挙げ
られる。Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Ｔｍ、 Ｇａ、及びＺｎの割合が原
子比で１対１対７０割合であることが必要である。これ
をはずすと目的とする化合物の単−相を得ろことができ
ない。The mixing ratio of the raw materials must be such that the ratio of Tm, Ga, and Zn is 1:1:70 in atomic ratio. If this is removed, it will not be possible to obtain a single phase of the target compound.
この混合物を大気中、酸化性雰囲気中あるいはＴ−およ
びＧ＆が各々３価イオン状態、 Ｚｎが各々２価イオン
状態から還元されない還元雰囲気中で６００℃以上のも
とで加熱する。加熱時間は数時間もしくはそれ以上であ
る。加熱の際の昇温速度には制約はない。加熱終了後急
冷するか、あるいは大気中に急激に引き出せばよい。This mixture is heated at 600 DEG C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which T- and G& are not reduced from their respective trivalent ion states and Zn from their divalent ion states. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere.
得られたＴｍＧａＺｎ７ｅ）１゜化合物の粉末は無色で
あや、粉末Ｘ１ｓ回折法によって結晶構造を有すること
が分かった。その結晶構造は層状構造であり％ Ｔｍ６
１ ｓ５層、 （Ｇａ、 Ｚｎ）５鵞ａｓ層、およびＺ
ｎＱ層の積重ねによって形成されていることが分かった
。The obtained TmGaZn7e)1° compound powder was colorless and hazy, and was found to have a crystalline structure by powder X1s diffraction method. Its crystal structure is a layered structure and %Tm6
1 S5 layer, (Ga, Zn)5 AS layer, and Z
It was found that it was formed by stacking nQ layers.
実施例
純度９９．９９％以上の酸化ツリウム（Ｔ町Ｑｓ）粉末
、純度９９．９％以上の酸化ガリウム（Ｇａ１６ｓ）粉
末、試薬特級の酸化亜鉛（Ｚｎ６）粉末をモル比で１対
１対１４の割合に秤量し、めのう乳鉢内でエタノールを
加えて、約３０分間部合し、平均粒径数μｍの微粉末混
合物を得た。該混合物を白金管内に封入し、１４５０℃
に設定された管状レリコニット炉内に入れ、４日間加熱
し、その後、試料を炉外にとりだし室温まで急速に冷却
した。Example Thulium oxide (T-cho Qs) powder with a purity of 99.99% or more, gallium oxide (Ga16s) powder with a purity of 99.9% or more, and reagent grade zinc oxide (Zn6) powder in a molar ratio of 1:1:14 ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μm. The mixture was sealed in a platinum tube and heated to 1450°C.
The sample was placed in a tubular Relikonite furnace set at 100 mL and heated for 4 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature.
得られた試料は、ＴｓｉＧａＺｎ７Ｊ・単−相であゆ、
粉末ｘｎ回折法によって面指数（ｈｋｔ）、面間隔（ｄ
ｏ）および相対反射強度（１％）を測定した。その結果
は表−２の通りであった。The obtained sample was TsiGaZn7J single-phase ayu,
Planar index (hkt), plane spacing (d
o) and relative reflection intensity (1%) were measured. The results were as shown in Table-2.
六方晶系としての格子定数は ａ＝３．３００±１）、００１（Ａ） ｃ＝７２．１１±０．０１ （Ａ） であった。The lattice constant as a hexagonal system is a=3.300±1), 001(A) c=72.11±0.01 (A) Met.
上記の格子定数および表−２の面指数（ｈ ｋ Ｌ ）
より算出しな面間隔（ｄ ｃ（λ））は、実測の面間隔
（ｄ ｏ （Ａ））と極めてよく一致していた。The above lattice constant and the surface index (h k L ) in Table 2
The calculated interplanar spacing (d c (λ)) was in extremely good agreement with the actually measured interplanar spacing (d o (A)).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供する。Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
Claims (2)
の層状構造を有する化合物(1) Compound with hexagonal layered structure represented by TmGaZn_7O_1_0
により酸化ツリウムに分解される化合物と、金属ガリウ
ムあるいは酸化ガリウムもしくは加熱により酸化ガリウ
ムに分解される化合物と、金属亜鉛あるいは酸化亜鉛も
しくは加熱により酸化亜鉛に分解される化合物とＴｍ、
ＧａおよびＺｎの割合が原子比で１対１対７の割合で混
合し、該混合物を６００℃以上の温度で大気中、酸化性
雰囲気中あるいはＴｍおよびＧａが各々３価イオン状態
、Ｚｎが２価イオン状態より還元されない還元雰囲気中
で加熱することを特徴とするＴｍＧａＺｎ＿７Ｏ＿１＿
０で示される六方晶系の層状構造を有する化合物の製造
法。(2) Metallic thulium or thulium oxide or a compound that decomposes into thulium oxide when heated; Metallic gallium or gallium oxide or a compound that decomposes into gallium oxide when heated; and Metallic thulium or zinc oxide or a compound that decomposes into zinc oxide when heated. The compound and Tm,
Ga and Zn are mixed at an atomic ratio of 1:1:7, and the mixture is heated at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or in a state where Tm and Ga are each in a trivalent ion state and Zn is in a divalent ion state. TmGaZn_7O_1_, which is characterized by heating in a reducing atmosphere that does not reduce the valence ion state.
A method for producing a compound having a hexagonal layered structure represented by 0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12906587A JPS63295425A (en) | 1987-05-26 | 1987-05-26 | Compound shown by tmgazn7o10 and having hexagonal lamellar strucuture and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12906587A JPS63295425A (en) | 1987-05-26 | 1987-05-26 | Compound shown by tmgazn7o10 and having hexagonal lamellar strucuture and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63295425A true JPS63295425A (en) | 1988-12-01 |
| JPH0333652B2 JPH0333652B2 (en) | 1991-05-17 |
Family
ID=15000216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12906587A Granted JPS63295425A (en) | 1987-05-26 | 1987-05-26 | Compound shown by tmgazn7o10 and having hexagonal lamellar strucuture and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63295425A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606894A (en) * | 1983-06-24 | 1985-01-14 | 株式会社東芝 | Nuclear fuel aggregate |
-
1987
- 1987-05-26 JP JP12906587A patent/JPS63295425A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606894A (en) * | 1983-06-24 | 1985-01-14 | 株式会社東芝 | Nuclear fuel aggregate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0333652B2 (en) | 1991-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63210024A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn5o8 and its production | |
| JPS63265818A (en) | Compound having hexagonal laminar structure expressed by ingazn7o10 and its production | |
| JPS63210022A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn3o6 and its production | |
| JPH0244262B2 (en) | INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPS63210023A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn4o7 and its production | |
| JPS63295425A (en) | Compound shown by tmgazn7o10 and having hexagonal lamellar strucuture and its production | |
| JPH0435424B2 (en) | ||
| JPS63295417A (en) | Compound shown by lualzn6o9 and having hexagonal lamellar structure and its production | |
| JPS63295421A (en) | Compound shown by ybgazn5o8 and having hexagonal lamellar structure and its production | |
| JPS63277522A (en) | Compound having hexagonal layer structure expressed by infezn8o11 and production thereof | |
| JPS63295426A (en) | Compound shown by ybgazn7o10 and having hexagonal lamellar structure and its production | |
| JPS63295424A (en) | Compound shown by tmgazn4o7 and having hexagonal lamellar structure and its production | |
| JPS63201016A (en) | Compound having layer structure of hexagonal system shown in inalzn2o5 and its production | |
| JPH0359005B2 (en) | ||
| JPS63265817A (en) | Compound having hexagonal laminar structure expressed by inalzn7o10 and its production | |
| JPH0244257B2 (en) | INGAZNMGO5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPS63295438A (en) | Compound shown by tmfezn7o10 and having hexagonal lamellar structure and its production | |
| JPH0435408B2 (en) | ||
| JPS63295429A (en) | Compound shown by lugazn5o8 and having hexagonal lamellar structure and its production | |
| JPS63295420A (en) | Compound shown by ybgazn4o7 and having hexagonal lamellar structure and its production | |
| JPS63295416A (en) | Compound shown by ybalzn9o12 and having hexagonal lamellar structure and its production | |
| JPS63295427A (en) | Compound shown by tmgazn9o12 and having hexagonal lamellar structure and its production | |
| JPS63265816A (en) | Compound having hexagonal laminar structure expressed by scgazn7o10 and its production | |
| JPH0435413B2 (en) | ||
| JPS63295422A (en) | Compound shown by tmgazn3o6 and having hexagonal lamellar structure and its production |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |