US9166055B2 - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

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US9166055B2
US9166055B2 US13/495,297 US201213495297A US9166055B2 US 9166055 B2 US9166055 B2 US 9166055B2 US 201213495297 A US201213495297 A US 201213495297A US 9166055 B2 US9166055 B2 US 9166055B2
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oxide semiconductor
film
oxide
layer
electrode layer
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US20120319114A1 (en
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Shunpei Yamazaki
Tatsuya Honda
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011-135355 priority
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Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD. reassignment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAZAKI, SHUNPEI, HONDA, TATSUYA
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