US20030189401A1 - Organic electroluminescent device - Google Patents

Organic electroluminescent device Download PDF

Info

Publication number
US20030189401A1
US20030189401A1 US10393952 US39395203A US2003189401A1 US 20030189401 A1 US20030189401 A1 US 20030189401A1 US 10393952 US10393952 US 10393952 US 39395203 A US39395203 A US 39395203A US 2003189401 A1 US2003189401 A1 US 2003189401A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
layer
light
organic
emissive
electroluminescent device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10393952
Inventor
Junji Kido
Takeshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INTERNATIONAL MANUFACTURING AND ENGINEERING SERVICE Co Ltd
Rohm Co Ltd
Original Assignee
International Manufacturing and Engineering Services Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5262Arrangements for extracting light from the device
    • H01L51/5278Arrangements for extracting light from the device comprising a repetitive electroluminescent unit between one set of electrodes
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00Compounds containing amino groups bound to a carbon skeleton
    • C07C211/43Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
    • C07C211/57Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton
    • C07C211/58Naphthylamines; N-substituted derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00Compounds containing amino groups bound to a carbon skeleton
    • C07C211/43Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
    • C07C211/57Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton
    • C07C211/61Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton with at least one of the condensed ring systems formed by three or more rings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5012Electroluminescent [EL] layer
    • H01L51/5036Multi-colour light emission, e.g. colour tuning, polymer blend, stack of electroluminescent layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5012Electroluminescent [EL] layer
    • H01L51/5036Multi-colour light emission, e.g. colour tuning, polymer blend, stack of electroluminescent layers
    • H01L51/504Stack of electroluminescent layers
    • H01L51/5044Stack of electroluminescent layers with spacer layers between the emissive layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5048Carrier transporting layer
    • H01L51/5056Hole transporting layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5048Carrier transporting layer
    • H01L51/5072Electron transporting layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5088Carrier injection layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5088Carrier injection layer
    • H01L51/5092Electron injection layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5203Electrodes
    • H01L51/5206Anodes, i.e. with high work-function material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5203Electrodes
    • H01L51/5221Cathodes, i.e. with low work-function material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5281Arrangements for contrast improvement, e.g. preventing reflection of ambient light
    • H01L51/5284Arrangements for contrast improvement, e.g. preventing reflection of ambient light comprising a light absorbing layer, e.g. black layer
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/02Ortho- or ortho- and peri-condensed systems
    • C07C2603/04Ortho- or ortho- and peri-condensed systems containing three rings
    • C07C2603/06Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members
    • C07C2603/10Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings
    • C07C2603/12Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings only one five-membered ring
    • C07C2603/18Fluorenes; Hydrogenated fluorenes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • C09K2211/1007Non-condensed systems
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • C09K2211/1011Condensed systems
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • C09K2211/1014Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H01L51/0056Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H01L51/0058Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0059Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H01L51/006Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5262Arrangements for extracting light from the device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Abstract

An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 Ωcm.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to an organic electroluminescent device (hereinafter, abbreviated as an “organic EL device” or “device”) which can be used in planar light sources and display devices. [0002]
  • 2. Description of the Related Art [0003]
  • Recently, attention has been drawn to organic electroluminescent devices having a light-emitting or luminescent layer including an organic compound between a cathode electrode and an anode electrode opposed to the cathode electrode as a large area display device operable at a low driving voltage. For the purpose of higher efficiency in an EL device, Tang et al., as is disclosed in Appl. Phys. Lett., 51, 913 (1987), have successfully achieved a sufficiently high luminance and high efficiency for practice use, i.e., a luminance of 1,000 cd/m[0004] 2 and an external quantum efficiency of 1% at an applied voltage no more(greater) than 10 volts, by adopting a structure in which organic compound layers having different carrier transporting properties are laminated to thereby introduce holes and electrons with good balance from an anode and a cathode, respectively, and by having the thickness of the organic compound layer no more(greater) than 2,000 Å.
  • Furthermore, according to the disclosures of the patents invented by Tang et al., (such as Japanese Laid-open Patent Application Nos. 59-194393, 63-264692 and 2-15595 and U.S. Pat. Nos. 4,539,507, 4,769,292 and 4,885,211) it is stated that if a total layer thickness of the organic layers sandwiched between an anode and a cathode does not exceed about 1 um, an EL device capable of emitting light at a lower level of the applied voltage can be provided, and that desirably, if the total layer thickness is reduced to a range of 1,000 to 5,000 Å, an electric field (V/cm) useful in obtaining a light emission at an applied voltage no more than about 25 volts can be obtained. [0005]
  • The reason why Tang et al. have directed their attention to a reduction of the layer thickness of the organic layers in attaining a reduction of the driving voltage, as described in the above-referenced article, resides in overcoming the problem suggested by Helfrich et al. in the 1960s. Namely, Helfrich et al. have observed that an external quantum efficiency of about 5% can be obtained when a sufficient electric field electroluminescence (EL) is applied to an anthracene single crystal; however, according to their method, only a low power conversion efficiency (w/w) could be obtained, since the voltage required to drive such devices is quite high (greater than 100V). [0006]
  • Referring to the above-reference Tang et al. patents, the organic EL devices suggested therein have a multilayered structure in which an anode, a hole injection (transporting) layer, a light-emitting layer (having an electron transporting property) and a cathode are laminated in that order, and the devices can provide a quantum efficiency of at least about 5×10[0007] −4 (0.05%). Furthermore, the quantum efficiency is defined in Japanese Laid-open Patent Application No. 59-194393 as the EL quantum efficiency simply equaling the ratio of photons per second emitted from the cell, to the electrons per second measured in the external circuit.
  • Presently, as has been already disclosed, when a fluorescent material (utilizing emission from a singlet excitation state) is used in the thin layer EL devices suggested by Tang et al., a quantum efficiency above 5% can be obtained. Furthermore, when a phosphorescent material (utilizing emission from a triplet excitation state) is used in the EL devices, a quantum efficiency approaching to 20% can be obtained. [0008]
  • As can be appreciated from the above description, the quantum efficiency is calculated from the number of the photons actually emitted from (outside of) the device, and thus the quantum efficiency is called external quantum efficiency. On the other hand, the number of photons generated internally in the device might be quite large when compared with the value observed externally, and it is predicted that such efficiency, called internal quantum efficiency might reach about 5 times of the external quantum efficiency. Accordingly, even presently, when using a phosphorescent material, an internal quantum efficiency can be exhibited at 100%, and thus it seems that the remaining problem in the organic EL devices resides only in an increase of the reliability concerning the operational life-time of the devices. [0009]
  • As described above, the suggestions by Tang et al. in their patents and articles have accelerated a worldwide research and development in the field of organic EL devices, and thus a great number of improved EL devices have been developed based on the basic device structure suggested by Tang et al. Presently, commercialization of the EL devices has already started in regard to their use as a display device on a dashboard or in a cellular phone. [0010]
  • However, from a viewpoint of durability of the device, the above-described conventional organic EL devices can barely attain a half-decay life time exceeding 10,000 hours with a luminance of only the order of 100 cd/m[0011] 2, which is required in display use. Presently, it is still difficult to attain a required practical operational life-time (10,000 hours or more) with a luminance of about 1,000 to 10,000 cd/m2, which is required in illumination use, etc. In fact, an organic EL device having a high luminance and long operational life-time is still not realized and not commercially available.
  • As described above, attention that has recently been drawn to organic EL devices has been based on the discovery of a thin film-forming material which drives the resulting device at a low voltage of not more than 10 volts. However, the resulting device still suffers from the disadvantage that if the device is intended to obtain a high luminance emission necessary for illumination purposes, a higher current density approaching tens of mA/cm[0012] 2 to hundreds of mA/cm2 is necessary. Note that in the best green light-emitting devices currently available, a luminance of about thousands to tens of thousands of cd/m2 still needs the above-mentioned current density of about 10 to 100 mA/cm2. It can be considered that this property is characteristic of charge injection type devices (like this organic EL device), and such characteristics can cause a relatively large problem with the operational life-time of organic EL devices in comparison with an inorganic LED (light-emitting diode) which is also a charge injection device and uses an inorganic compound semiconductor which can be more robust than organic compounds.
  • In an organic layer formed from a low molecular organic material via a vacuum vapor deposition method, the nature of the electric current passing through the organic layer is defined as a hopping conduction of electrons and holes between the molecules of the material. Furthermore, when observing the molecules from the chemical aspect, it can be described like this; the electron transporting molecules and the hole transporting molecules which are generally being as electrically neutral molecules are repeatedly subjected to a process in which the electron transporting and hole transporting molecules are shifted to a radical anion state or a radical cation state, i.e., the oxidation-reduction reaction in terms of Lewis' chemistry is being repeated between these molecules. Referring to the above-described property in the organic EL devices, i.e., that a higher current density is required to attain higher luminance, this property means that the oxidation-reduction reactions are repeated at a higher frequency. Obviously, the deterioration speed of the organic molecules is proportional to a frequency of the oxidation-reduction reactions, namely, the current density. [0013]
  • To solve the above problem, Japanese Laid-open Patent Application No. 11-329748 (corresponding U.S. Pat. No. 6,107,734) suggests an organic EL device in which a plurality of organic light-emitting layers are electrically connected in series through an intermediate conductive layer, and with regard to the intermediate conductive layer, describes that many types of materials may be used in the formation of the intermediate conductive layer, as long as they (the intermediate conductive layer) are capable of injecting holes and electrons to one or the other primary surface side, and capable of keeping an approximate equipotential in the layer. [0014]
  • This EL device, however, suffers from the following problem. For instance, in the display device having a simple matrix structure, the light emission area upon voltage application should be defined only to the pixel, i.e., the intersection area, sandwiched by cathode and anode line, thereby enabling to display a motion picture. However, in the above-described case in which the intermediate conductive layer having a substantially equipotential surface is formed in a substantially overall surface in an area which is equal to the area of the organic light-emitting layers, i.e., when the intermediate conductive layer is also formed in areas other than the intersection area sandwiched by cathode and anode line, light emission can be generated in areas other than the intersection areas in which the light emission is desired to be generated. Specifically, there is a possibility of generating light emission in all of the crossed area of the cathode with the intermediate conductive layer, the crossed area of the anode and with the intermediate conductive layer, and if two or more intermediate conductive layers are contained, the crossed area between one intermediate conductive layer and another intermediate conductive layer. [0015]
  • Accordingly, it is described in Japanese Laid-open Patent Application No. 11-329748 that the intermediate conductive layers of each pixel are separated not only from the intermediate conductive layer of the adjacent pixels, but also from a power source. Furthermore, one idea to separate the intermediate conductive layers from each other in the pixels in the EL device having a simple matrix structure is also described in this publication. If an interlayer insulation film is previously formed and disposed at a layer thickness above 1 um and in the form of a sharp step pattern, the conductive layer can be automatically separated in the presence of a suddenly-changed shape of the interlayer insulation film, even if the conductive layer is formed using the shadow mask identical to the one for an organic material deposition. [0016]
  • However, in this case, although the cathode should not be separated, the cathode can be separated by the interlayer insulation film if the cathode has only a thickness of about 0.1 μM (100 nm) as in the conventional organic EL devices. To avoid this problem, Japanese Laid-open Patent Application No. 11-329748 teaches use of In (indium) as the cathode material at large thickness, thereby preventing electrical separation of the cathode line, because indium cannot easily cause problems due to crystallization (this problem is generally referred to as “hillock”), even if the cathode is formed at a thickness of 1 μm or more. [0017]
  • In this alternative case, however, a problem of the throughput reduction cannot be also avoided, because a metal such as Al (aluminum), which is a conventional and low-cost wiring material, cannot be used as a cathode material and also it is necessary to stably form “an interlayer insulation film having a layer thickness above 1 μM and a suddenly-changed shape of the interlayer”. [0018]
  • Furthermore, the inventors of the present invention have also proposed another organic EL device in Japanese Patent Application No. 2001-225847, and has at least two light-emitting units constituting the conventional organic EL device (the components in all the elements constituting the conventional organic EL device except for a cathode and an anode), and the contained light-emitting units are separated from each other with a transparent layer acting as an equipotential surface. [0019]
  • The “equipotential surface” used herein means that when a voltage is applied, the transparent layer cannot exhibit a substantial potential difference in both a thickness direction and a planar (lateral) direction in the layer. In other words, although the inventors have not specifically disclosed, they have implied the necessity to construct the equipotential surface from an electrically conductive material, i.e., any material having a resistivity less than 1.0×10[0020] 2 Ωcm.
  • However, as in the above-discussed Japanese Laid-open Patent Application No. 11-329748, if the two or more light-emitting units are separated using a material having a high electrical conductivity (low resistivity) described above, there may be difficulties in defining light emission areas as required, due to the conductivity in a planar (lateral) direction (direction parallel to a substrate). [0021]
  • In practice, as shown in FIG. 38B, even if the production of the EL device is carried out in accordance with the method of Japanese Laid-open Patent Application No. 11-329748 by producing a cathode 55 and an anode 52, both in the form of a strip having a width of 2 mm, and arranging the cathode 55 and the anode 52 so that they are crossed at right angles, thereby producing a light emission area corresponding to the crossed (intersection) area, i.e., 2 mm square (□), unexpected light emission may be caused in other areas when there is an area having an equipotential surface 54 is extended to another area. The undesirable emission in the EL device is shown in the photograph of FIG. 38A. [0022]
  • To avoid the above problem, as disclosed in the examples of Japanese Patent Application No. 2001-225847, the inventors had to form an equipotential surface using a shadow mask (2 mm square pattern; □) having a patterned opening which corresponds to the desired light emission area, thereby selectively forming the equipotential surface only in the desired emission layer. However, in this method, it is difficult to attain selective emission only in the desired pixels in the display device, because the display device has to be produced at a pixel length and pitch (between each pixel) of about 0.1 mm or less. [0023]
  • In regard to improving productivity in mass-production of the EL devices, frequent changing and precise positioning operations of the shadow mask is not desirable, because it causes tremendous reduction of throughput. [0024]
  • SUMMARY OF THE INVENTION
  • In view of the above problems in the conventional organic electroluminescent (EL) devices, the present invention provides an organic EL device which can effectively and stably provide a device structure capable of achieving a long operational life time with a light-emission at a higher luminance, which cannot be easily attained in conventional EL devices. In the production of such organic electroluminescent (EL) devices, the formation of two or more light-emissive units (mainly formed from an organic material), sandwiched between a cathode and an anode, frequent change and precise positioning of shadow masks for defining a deposition area is not required during the formation of a charge generation layer, which is newly introduced in the present invention. A formation of the interlayer insulation film in a sudden-changed shape which has a risk of causing disconnection of a cathode line is also not required, thus enabling to enhance productivity and to simplify the process of manufacturing simple matrix-type display devices, etc. According to an aspect of the present invention, an organic electroluminescent device is provided, including at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer constituting an electrically insulating layer having a resistivity of not less than 1.0×10[0025] 2 Ωcm.
  • It is desirable for the charge generation layer to constitute an electrically insulating layer having a resistivity of not less than 1.0×10[0026] 5 Ωcm.
  • It is desirable for the charge generation layer to include a laminated and/or mixed layer formed from two different materials. A charge transfer complex including a radical cation and a radical anion is formed upon an oxidation-reduction reaction between the two materials, and a radical cation state and a radical anion state in the charge transfer complex is transferred to a direction of the cathode and a direction of the anode, respectively, when a voltage is applied to the device, so that a hole is injected into the light-emissive unit which is located on a cathode side of the charge generation layer and is adjacent thereto, and an electron is injected into the light-emissive unit which is located on an anode side of the charge generation layer and is adjacent thereto. [0027]
  • It is desirable for the charge generation layer to include a laminated and/or a mixed layer including an organic compound having an ionization potential of less than 5.7 eV and a hole transporting property or electron donating property; and an inorganic and/or organic material capable of forming a charge transfer complex through the oxidation-reduction reaction thereof with the organic compound. The charge generation layer contains a charge transfer complex formed upon the oxidation-reduction reaction between the organic compound and one of an inorganic and organic material. [0028]
  • The organic compound can include an arylamine compound, wherein the arylamine compound is represented by the following formula (I): [0029]
    Figure US20030189401A1-20031009-C00001
  • wherein Ar1, Ar2 and Ar3 each independently represents an aromatic hydrocarbon group which may have substituents. [0030]
  • It is desirable for the organic compound to include an arylamine compound having a glass transition temperature of not lower than 90° C. [0031]
  • The arylamine can include one of α-NPD, 2-TNATA, spiro-TAD, and spiro-NPB. [0032]
  • The inorganic material can be a metal oxide. [0033]
  • The inorganic material can be a metal halide. [0034]
  • The metal oxide can be vanadium pentaoxide or rhenium heptaoxide. [0035]
  • The inorganic material can be deposited by one of a resistive heating vapor deposition method, an electron beam vapor deposition method and a laser beam vapor deposition method. [0036]
  • The inorganic material can be deposited by a sputtering method. A sputtering apparatus used in the sputtering method is a facing target sputtering system which includes a pair of opposed targets provided at a certain distance, a reflection electrode capable of reflecting electrons towards a front peripheral area of each target, and a magnetic field generation device capable of forming a parallel magnetic field in the vicinity of the peripheral portion of each target, the magnetic field having a portion parallel to the peripheral portion of the target. [0037]
  • The organic material can include at least one fluorine as a substituent group, and possess at least one of an electron injection property and an electron accepting property. [0038]
  • The organic material can include at least one cyano group as a substituent group, and possess at least one of an electron injection property and an electron accepting property. [0039]
  • The organic material can be tetrafluoro-tetracyanoquinodimethane (4F-TCNQ). [0040]
  • The light-emissive unit can include, as a layer located on an anode side of the charge generation layer and being adjacent thereto, an electron injection layer having a mixture including an organic compound and a metal functioning as an electron donating dopant. [0041]
  • The electron donating dopant can include at least one metal selected from a group including an alkaline metal, an alkaline earth metal and a rare earth metal. [0042]
  • The metal of the electron donating dopant can be provided in a molar ratio of 0.1 to 10 with respect to the organic compound in the electron injection layer. [0043]
  • The light-emissive unit can include, as a layer located on an anode side of the charge generation layer and being adjacent thereto, a metal layer having a thickness of not more than 5 nm formed from a metal selected from an alkaline metal, an alkaline earth metal and a rare earth metal. The metal constituting the layer diffuses in the adjacent electron transporting layer to react with electron transporting organic material. As a result of the diffusion, an electron injection layer being composed of a mixture including the electron transporting organic material and a metal functioning as an electron donating dopant is formed. [0044]
  • The light-emissive unit can include, as a layer located on an anode side of the charge generation layer and being adjacent thereto, a layer including an organic metal complex compound including at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion, and a reaction generating layer which is formed by an in-situ reduction reaction when a thermally reducible metal, which can reduce a metal ion in the organic metal complex to a metal in a vacuum is deposited on the organic metal complex constituting the layer. [0045]
  • The light-emissive unit can include, as a layer located on an anode side of the charge generation layer and being adjacent thereto, a layer including an inorganic compound including at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion, and a reaction generating layer which is formed by an in-situ reduction reaction when a thermally reducible metal, which can reduce a metal ion in the inorganic compound to a metal in a vacuum is deposited on the inorganic compound constituting the layer. [0046]
  • It is desirable for the thermally reducible metal to include at least one selected from Aluminum, Zirconium, Silicon, Titanium and Tungsten. [0047]
  • The light-emissive unit can include a structure, as a layer located on an anode side of the charge generation layer and being adjacent thereto, in which a layer of a mixture including an organic compound and an electron donating dopant is formed, thereafter, a reaction generating layer is generated by an in-situ reduction reaction when a thermally reducible metal, which can reduce an alkaline metal ion, an alkaline earth metal ion or a rare earth metal ion to a metal in a vacuum, is deposited on an organic metal complex compound containing at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion. [0048]
  • The light-emissive unit can include a structure, as a layer located on an anode side of the charge generation layer and being adjacent thereto, in which a layer of a mixture including an organic compound and an electron donating dopant is formed, a reaction generating layer is generated by an in-situ reduction reaction when a thermally reducible metal, which can reduce an alkaline metal ion, an alkaline earth metal ion or a rare earth metal ion to a metal in a vacuum, is deposited on an inorganic compound containing at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion. [0049]
  • The light-emissive unit can include, as a layer located on a cathode side of the charge generation layer and being adjacent thereto, a hole injection layer including a mixture of an organic compound and an electron accepting compound having a property capable of oxidizing the organic compound in terms of Lewis acid chemistry. [0050]
  • The electron accepting compound having a property capable of oxidizing the organic compound in the hole injection layer in terms of Lewis acid chemistry can be provided in a molar ratio of 0.01 to 10 with respect to the organic compound. [0051]
  • The light-emissive unit can include, as a layer located on a cathode side of the charge generation layer and being adjacent thereto, a hole injection layer including an electron accepting compound and having a thickness of not more than 30 nm. [0052]
  • The light-emissive units can each have different emission spectrums. [0053]
  • The organic electroluminescent device can emit white light due to superimposing of different lights from each light-emissive unit. [0054]
  • At least one of the light-emissive units can include a light-emissive layer containing a phosphorescent material. [0055]
  • In each of the light-emissive units, it is desirable for an optical path length from a light-emissive site to a light-reflective metal electrode to be an odd-numbered times a quarter wavelength of light. [0056]
  • All the layers including the light-emissive units, the charge generation layer and the electrode layer can be formed on a substrate by heating a vaporizable material in a vacuum to deposit one of a vaporized and sublimed material on the substrate. Upon depositing the vaporized or sublimed material on the substrate, a substrate is transported in a direction of a planar surface thereof, a deposition area being open in a lower surface of the substrate; a container is provided, in a lower position of the transporting substrate, including a vaporizable material having a deposition width which can cover the deposition area extending in a direction perpendicular to the transportation direction of the substrate; and the container is heated to thereby one of vaporize and sublime so as to deposit the vaporizable material provided in the container. [0057]
  • It is desirable for a combined thickness of the light-emissive units and the charge generation layers, sandwiched between the cathode and the anode, to be greater than 1,000 nm (1 μm). [0058]
  • It is desirable for the organic electroluminescent device to be operated at a driving voltage of more than 25 volts. [0059]
  • It is desirable for light to be able to be passed in only one direction which is one of an anode electrode direction and a cathode electrode direction, from a light generation site in the organic electroluminescent device, wherein light advancing in a direction opposite to the only one direction is absorbed by a light-absorbing medium, and wherein, in each of the light-emissive units, a light interference effect is removed so that an adjustment of an optical path length from a light-emissive site of the light-emissive layers to a light-reflective metal electrode is substantially not necessary. [0060]
  • It is desirable for light advancing in one direction which is one of an anode electrode direction and a cathode electrode direction, from a light generation site in the organic electroluminescent device to be reflected diffusely by a diffused reflection medium, and in each of the light-emissive units, a light interference effect to be removed, so that an adjustment of an optical path length from a light-emissive site of the light-emissive layers to a light-reflective metal electrode is substantially not necessary. [0061]
  • The present disclosure relates to subject matter contained in Japanese Patent Application Nos.2002-86599 (filed on Mar. 26, 2002) and 2003-70135 (filed on Mar. 14, 2003) which are expressly incorporated herein by reference in their entireties.[0062]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic view showing a light emission mechanism of prior art organic EL device; [0063]
  • FIG. 2 a schematic view showing a light emission mechanism of the organic EL device according to the present invention; [0064]
  • FIG. 3 is a schematic view showing a charge transfer complex formation and transfer of electrons and holes upon application of voltage in a charge generation layer having a laminated layer structure, according to the device of the present invention; [0065]
  • FIG. 4 is a schematic view showing a charge transfer complex formation and transfer of electrons and holes upon application of voltage in a charge generation layer having a mixed layer structure, according to the device of the present invention; [0066]
  • FIG. 5 is a graph of the absorption spectrum obtained in a single layer or mixed layer of an arylamine compound and vanadium pentaoxide; [0067]
  • FIG. 6 is a graph of the absorption spectrum obtained in a single layer or mixed layer of 2-TNATA and 4F-TCNQ; [0068]
  • FIG. 7 is a graph of the absorption spectrum obtained in a single layer or mixed layer of α-NPD and rhenium heptaoxide; [0069]
  • FIG. 8 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device according to the present invention; [0070]
  • FIG. 9 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Reference Example 1; [0071]
  • FIG. 10A shows a glass substrate on which a transparent anode electrode is coated; [0072]
  • FIG. 10B shows a construction of a metallic mask for organic layer formation; [0073]
  • FIG. 10C shows a construction of a metallic mask for cathode electrode formation; [0074]
  • FIG. 10D shows schematic view illustrating a construction of the organic EL device; [0075]
  • FIG. 11 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Reference Example 2; [0076]
  • FIG. 12 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Reference Example 3; [0077]
  • FIG. 13 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Example 1; [0078]
  • FIG. 14 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Example 2; [0079]
  • FIG. 15 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Example 3; [0080]
  • FIG. 16 is a graph of the emission spectrum obtained in Reference Example 1, and Examples 1 and 4; [0081]
  • FIG. 17 is a graph of the emission spectrum obtained in Reference Examples 2 and 3, and Example 3; [0082]
  • FIG. 18 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Example 4; [0083]
  • FIG. 19 is a graph of the emission spectrum of three EL devices produced in Example 4; [0084]
  • FIG. 20 is a graph of the emission spectrum of three EL devices produced in Example 5; [0085]
  • FIG. 21 is a graph of the luminance-voltage curve of the organic EL devices produced in Reference Example 1, and Examples 1 and 2; [0086]
  • FIG. 22 is a graph of the current density-voltage curve of the EL devices produced in Reference Example 1, and Examples 1 and 2; [0087]
  • FIG. 23 is a graph of the current efficiency-current density curve of the EL devices produced in Reference Example 1, and Examples 1 and 2; [0088]
  • FIG. 24 is a graph of the luminance-voltage curve of the organic EL devices produced in Reference Examples 2 and 3, and Example 3; [0089]
  • FIG. 25 is a graph of the current density-voltage curve of the EL devices produced in Reference Examples 2 and 3, and Example 3; [0090]
  • FIG. 26 is a graph of the current efficiency-current density curve of the EL devices produced in Reference Examples 2 and 3, and Example 3; [0091]
  • FIG. 27 is a graph of the luminance-voltage curve of three organic EL devices produced in Example 4; [0092]
  • FIG. 28 is a graph of the current density-voltage curve of three EL devices produced in Example 4; [0093]
  • FIG. 29 is a graph of the current efficiency-current density curve of three EL devices produced in Example 4; [0094]
  • FIG. 30 is a graph of the luminance-voltage curve of three organic EL devices produced in Example 5; [0095]
  • FIG. 31 is a graph of the current density-voltage curve of three EL devices produced in Example 5; [0096]
  • FIG. 32 is a graph of the current efficiency-current density curve of three EL devices produced in Example 5; [0097]
  • FIG. 33 is a plan view showing a device having a sandwiched structure used in the evaluation of the resistivity; [0098]
  • FIG. 34 is a cross-sectional view showing a device having a sandwiched structure used in the evaluation of the resistivity; [0099]
  • FIG. 35 is a plan view showing a device having a coplanar arrangement structure used in the evaluation of the resistivity; [0100]
  • FIG. 36 is a cross-sectional view showing a device having a coplanar arrangement structure used in the evaluation of the resistivity; [0101]
  • FIG. 37 is a graph of the electric field-current density curve for calculating a resistivity determined in a Test Example; [0102]
  • FIG. 38A is a photograph showing an emission state in the organic EL device described in Japanese Patent Application No. 2001-225847; [0103]
  • FIG. 38B is a schematic cross-sectional view illustrating a lamination structure of the organic EL device; [0104]
  • FIG. 39A is a photograph showing an emission state in the organic EL device produced in Example 3; [0105]
  • FIG. 39B is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Example 3;FIG. 40 is a graph showing a relation between mixed ratio (molar fraction) of the co-deposition layer of V[0106] 2O5 and α-NPD, and resistivity;
  • FIG. 41 is a schematic cross-sectional view illustrating a lamination structure of the organic EL device produced in Example 6; [0107]
  • FIG. 42 is a graph of the luminance-voltage curve of the organic EL devices produced in Example 6 and a conventional device; [0108]
  • FIG. 43 is a graph of the current density-voltage curve of the EL devices produced in Example 6 and a conventional device; [0109]
  • FIG. 44 is a graph of the current efficiency-current density curve of the EL devices produced in Example 6 and a conventional device; and [0110]
  • FIG. 45 is a graph of the luminous efficiency-luminance curve of the organic EL devices produced in Example 6 and a conventional device.[0111]
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The inventors of the present invention have conducted intensive studies for solving the above-mentioned problems, and have found that a solution can be attained if two or more laminated light-emissive units are sandwiched between a cathode electrode and an anode electrode opposed to the cathode electrode, and each of the light-emissive units are partitioned with a charge generation layer having a resistivity of at least 1.0×10[0112] 2 Ωcm, desirably at least 1.0×105 Ωcm. Hereinafter, the property having such a resistivity is abbreviated as “electrically insulating”.
  • When a certain level of the voltage was applied between a cathode and an anode in the EL device having the above structure, only the two or more light-emissive units located in a crossed area of the cathode and the anode can be connected as if connected in series, and thus they can simultaneously emit light. Because of this simultaneous emission, using the EL device, it becomes possible to achieve a high quantum efficiency or current efficiency which cannot be obtained in any conventional EL device. [0113]
  • As described above, according to the present invention, the light-emissive units are connected “as if connected in series” throughout the charge generation layer. Such a series connection of the light-emissive units means that when a certain level of the voltage was applied to the EL device, each charge generation layer can inject holes in a cathode direction of the device, thus playing a role for injecting electrons in an anode direction, and as a result of injection of both the electrons and the holes, although all the layers (light-emissive units and the charge generation layers) sandwiched between the anode and the cathode are formed from an electrically insulating layer, the two or more light-emissive units can act just as they are electrically connected in series as in an electrical circuit. [0114]
  • In other words, the organic EL device according to the present invention resides in an organic EL device including two or more light-emissive units between a cathode electrode and an anode electrode opposed to the cathode electrode, each light-emissive unit having at least one light-emissive layer, in which the light-emissive units are partitioned from each other by at least one charge generation layer, and the charge generation layer is an electrically insulating layer having a resistivity of at least more than 1.0×10[0115] 2 Ωcm, desirably at least 1.0×105 Ωcm.
  • Furthermore, the material used in the formation of layers constituting each light-emissive unit corresponds to a component sandwiched between the anode and the cathode in the conventional EL devices, and thus all the layers formed therein are electrically insulating layers having a resistivity of not less than 1.0×10[0116] 2 Ωcm.
  • The “light-emissive unit” refers to a component of the EL device having a layer structure including at least one light-emissive layer including an organic compound, i.e., the component of the conventional organic EL device from which an anode and a cathode are omitted. [0117]
  • Furthermore, the “charge generation layer” refers to an electrically insulating layer having a resistivity of not less than 1.0×10[0118] 2 Ωcm, desirably at least 1.0×105 Ωcm, and as described above, represents a layer capable of injecting an electron for an anode direction of the device as well as injecting a hole for a cathode direction of the device upon voltage being applied.
  • In the organic EL device of the present invention, the charge generation layer desirably includes a laminate or a mixed layer formed from two different materials. A charge transfer complex having a radical cation and a radical anion is formed upon an oxidation-reduction reaction between these two materials. When a voltage is applied to the EL device, a radical cation state (hole) and a radical anion state (electron) in the charge transfer complex is transferred to a direction of the cathode and a direction of the anode, respectively, so that a hole is injected into the light-emissive unit which is located on a cathode side of the charge generation layer and is adjacent thereto, and an electron is injected into the light-emissive unit which is located on an anode side of the charge generation layer and is adjacent thereto. [0119]
  • Moreover, in the organic EL device of the present invention, the charge generation layer desirably includes a laminated or a mixed layer which has the following components: [0120]
  • (a) an organic compound having an ionization potential of less than 5.7 eV and a hole transporting property or electron donating property; and [0121]
  • (b) an inorganic or organic material capable of forming a charge transfer complex through its oxidation-reduction reaction with the organic compound (a); and [0122]
  • a charge transfer complex formed upon the oxidation-reduction reaction between the components (a) and (b) being contained in the charge generation layer. [0123]
  • In addition, in order to easily obtain a radical cation state from an organic compound which generally has an electron donating property, it is desirable that the organic compound has an ionization potential of less than 5.7 eV. If the ionization potential of the organic compound used as the component (a) is 5.7 eV or more, it is difficult to cause an oxidation-reduction between the organic compound and the compound used as the component (b) with result of difficulty in producing a charge transfer complex which is required in when applying the present invention. [0124]
  • More particularly, the organic compound used as the component (a) is desirably an arylamine compound, and the arylamine compound is desirably represented by the following formula (I): [0125]
    Figure US20030189401A1-20031009-C00002
  • wherein Ar1, Ar2 and Ar3 each independently represent an aromatic hydrocarbon group which can have substituents. [0126]
  • tetra-p-tolyl-4,4′-diaminobiphenyl, bis(4-di-p-tolylaminophenyl)phenylmethane, N,N′-diphenyl-N,N′-di(4-methoxyphenyl)-4,4′-diaminobiphenyl, N,N,N′,N′-tetraphenyl-4,4′-diaminodiphenylether, 4,4′-bis(diphenylamino)quadriphenyl, 4-N,N-diphenylamino-(2-diphenylvinyl)benzene, 3-methoxy-4′-N,N-diphenylaminostilbenzene, N-phenylcarbazole, 1,1-bis(4-di-p-triaminophenyl)cyclohexane, 1,1-bis(4-di-p-triaminophenyl)-4-phenylcyclohexane, bis(4-dimethylamino-2-methylphenyl)phenylmethane, N,N,N-tri(p-tolyl)amine, 4-(di-p-tolylamino)-4′-[4-(di-p-tolylamino)styryl]stilbene, N,N,N′,N′-tetraphenyl-4,4′-diaminobiphenyl N-phenylcarbazole, 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl, 4,4″-bis[N-(1-naphthyl)-N-phenylamino]p-terphenyl, 4,4′-bis[N-(3-acenaphthenyl)-N-phenylamino]biphenyl, 1,5-bis[N-(1-naphthyl)-N-phenylamino]naphthalene, 4,4′-bis[N-(9-anthryl)-N-phenylamino]biphenyl, 4,4″-bis[N-(1-anthryl)-N-phenylamino]p-terphenyl, 4,4′-bis[N-(2-phenanthryl)-N-phenylamino]biphenyl, 4,4′-bis[N-(8-fluoranthenyl)-N-phenylamino]biphenyl, 4,4′-bis[N-(2-pyrenyl)-N-phenylamino]biphenyl, 4,4′-bis[N-(2-perylenyl)-N-phenylamino]biphenyl, 4,4′-bis[N-(1-coronenyl)-N-phenylamino]biphenyl, 2,6-bis(di-p-tolylamino)naphthalene, 2,6-bis[di-(1-naphthyl)amino]naphthalene, 2,6-bis[N-(1-naphthyl)-N-(2-naphthyl)amino]naphthalene, 4,4″-bis[N,N-di(2-naphthyl)amino]terphenyl, 4,4′-bis {N-phenyl-N-[4-(1-naphthyl)phenyl]amino}biphenyl, 4,4′-bis[N-phenyl-N-(2-pyrenyl)amino]biphenyl, 2,6-bis[N,N-di(2-naphthyl)amino]fluorene, 4,4″-bis(N,N-di-p-tolylamino)terphenyl, bis(N-1-naphthyl)(N-2-naphthyl)amine, 4,4′-bis[N-(2-naphthyl)-N-phenylamino]biphenyl (α-NPD), represented by the following formula: [0127]
    Figure US20030189401A1-20031009-C00003
  • , spiro-NPD represented by the following formula: [0128]
    Figure US20030189401A1-20031009-C00004
  • , spiro-TAD represented by the following formula: [0129]
    Figure US20030189401A1-20031009-C00005
  • , 2-TNATA represented by the following formula: [0130]
    Figure US20030189401A1-20031009-C00006
  • , and the like. [0131]
  • Furthermore, any well-known arylamine compound used in the production of a conventional organic EL devices can be suitably used. [0132]
  • Furthermore, in regard to increasing a heat resistance of the devices, it is desirable that the arylamine compound used herein is an arylamine compound having a glass transition temperature of not lower than 90° C. [0133]
  • Among many arylamine compounds listed above, α-NPD, spiro-NPB, spiro-TAD and 2-TNATA are typical examples of a suitable arylamine compound because they have a glass transition temperature of not lower than 90° C. [0134]
  • In the organic EL device of the present invention, if the charge generation layer is constructed from a laminate including two different materials, one material constituting the laminate can be an organic material which constitutes a hole transporting layer in the light-emissive unit adjacent to the charge generation layer. Furthermore, in such a case, the hole transporting layer is desirably constructed from an arylamine compound used as the component (a). [0135]
  • The present invention will be further described with reference to the accompanying drawings. [0136]
  • As described above, the organic EL device according to the present invention is characterized in that the device includes an anode electrode/a plurality of light-emissive units (includes at least one light-emissive layer, principally consists of an organic material and generally has a laminated structure of two or more layers)/a cathode electrode. The plurality of light-emissive units are provided between the anode and cathode electrodes, and each light-emissive unit is partitioned with an electrically insulating charge generation layer having a resistivity or specific resistance of not less than 1.0×10[0137] 2 Ωcm, desirably not less than 1.0×105 Ωcm.
  • As shown in FIG. 1, the prior art organic EL device has a construction in which a single light-emissive unit is sandwiched in between the electrodes, and an electron (e[0138] ) is injected from a cathode side into the unit, while a hole (h+) is injected from an anode side into the unit so that the electron and the hole can be recombined inside the unit, thereby an excitation state to cause light emission.
  • Conversely, in the organic EL device according to the present invention, as shown in FIG. 2, a recombination of the electron and the hole can be made within the plurality of light-emissive units, each being partitioned by a charge generation layer, and thus a plurality of light emissions can be generated between the electrodes. [0139]
  • In the organic EL device of the present invention an electrically insulating material having a resistivity of not less than 1.0×10[0140] 2 Ωcm, desirably not less than 1.0×105 Ωcm is used as a material for forming a charge generation layer. Furthermore, generally, the charge generation layer is desirably a layer having a visible light transmittance of not less than 50%. A transmittance of less than 50% will not provide the desired quantum efficiency (current efficiency) even if the device has a plurality of the light-emissive units because the light generated in the units is absorbed during its transmission through the charge generation layer.
  • Furthermore, both an inorganic material and an organic material can be used as a material for forming a charge generation layer, providing the material used has a specific resistivity described above. However, a suitable construction of the charge generation layer of the present invention, as described above, includes a laminate or a mixed layer formed from two different materials. Upon oxidation-reduction reaction between these two materials, a charge transfer complex including a radical cation and a radical anion is formed in the charge generation layer. Since a radical cation state and a radical anion state in the charge transfer complex are moved to a cathode direction and an anode direction, respectively, when a voltage is applied, the charge generation layer can inject a hole in a light-emissive unit adjacent to the layer on a cathode side and also can inject an electron in a light-emissive unit adjacent to the layer on an anode side. [0141]
  • As described above, the charge generation layer in the device of the present invention is desirably a laminate or a mixed layer formed from an arylamine compound such as the component (a) and a substance, such as the component (b), which may be an inorganic substance or an organic substance, capable of forming a charge transfer complex upon the oxidation-reduction reaction with the arylamine compound. [0142]
  • FIG. 3 is a schematic view showing a charge transfer complex formation in a charge generation layer which is a laminate including the above-described components (a) and (b), and the transfer of electrons and holes in the charge generation layer upon application of the voltage. [0143]
  • Furthermore, FIG. 4 is a schematic view showing a charge transfer complex formation and transfer of electrons and holes upon application of voltage in a charge generation layer which is a mixed layer including the above components (a) and (b). [0144]
  • Furthermore, whether or not the two compounds constituting the charge generation layer can form a charge transfer complex can be confirmed by using a spectroscopic analysis. For example, when the two compounds are examined, it can be confirmed that in separate use, the each compound does not exhibit an absorption peak in a near infrared region of the wavelength of 800 to 2,000 nm, however, if they are used as a mixed layer, the layer can show an absorption peak in a near infrared region of the wavelength of 800 to 2,000 nm, i.e., the confirmed absorption peak clearly teaches the presence (or evidence) of an electron transfer between the two compounds. [0145]
  • FIG. 5 shows an absorption spectrum obtained in a sole use of each of arylamine compounds: 2-TNATA, α-NPD, spiro-TAD and spiro-NPB, and V[0146] 2O5 (vanadium pentaoxide), and an absorption spectrum obtained in a mixed layer of each arylamine compound and vanadium pentaoxide. As can be appreciated from the graph of FIG. 5, the arylamine compounds and vanadium pentaoxide each cannot show a peak in a near IR region of the wavelength of 800 to 2,000 nm when they are used alone, but, if they are used in the form of a mixed layer including the arylamine compound and vanadium pentaoxide, the layer can show a prominent peak in a near IR region of the wavelength of 800 to 2, 000 nm, from which a charge transfer complex formation can be confirmed.
  • FIG. 6 shows an absorption spectrum of each of 2-TNATA and 4F-TCNQ obtained when they are used in the form of a single layer or a mixed layer, and FIG. 7 shows an absorption spectrum obtained in a mixed layer of α-NPD and Re2O7 (di-rhenium heptaoxide). [0147]
  • The inventors of the present invention could observe from the absorption spectrums of each of the mixed layers shown in FIGS. [0148] 5 to 7 that a new and third absorption spectrum was produced in a position of the near IR region (800 to 2,000 nm) upon the reaction caused with the electron transfer, and the third absorption spectrum is not a simply piled up spectrum curve obtained as a result of combination of a spectrum of one single substance with a spectrum of another single substance. The inventors have studied and found that a chemical reaction generated in the mixed layer is an important factor to ensure a charge transfer upon application of the voltage.
  • When two compounds (or layers) are laminated, it is easily conceived that a chemical reaction can be generated in an interfacial surface between the two layers. Thus, it is true that the intended and desired properties can be obtained in a charge generation layer when the layer is formed by lamination of the two compounds. [0149]
  • In the present invention, the terms “light-emissive unit”, as explained above, means a “component of the conventional organic EL device” excluding an anode and a cathode. [0150]
  • The “component of the conventional organic EL device” includes, for example, (anode)/a light-emissive layer/(cathode), (anode)/a hole-transporting layer/a light-emissive layer/(cathode), (anode)/a hole-transporting layer/a light-emissive layer/an electron-transporting layer/(cathode), (anode)/a hole injection layer/a hole-transporting layer/a light-emissive layer/an electron-transporting layer/(cathode) and the like. [0151]
  • In the organic EL device according to the present invention, the light-emissive units may have any laminate structure, providing the laminate structure satisfies the requirement that each light-emissive unit is partitioned with an electrically insulating charge generation layer and that there are a plurality of light-emissive units. Furthermore, the materials used in the formation of a light-emissive layer, a hole-transporting layer, a hole injection layer, an electron-transporting layer, an electron injection layer, and the like are not restricted to any specific material and can be any conventional material used in the formation of these layers. [0152]
  • Furthermore, the light-emissive or luminescent materials which may be added to a light-emissive layer are also not restricted to a specific material, and can be any well-known material which includes, for example, a wide variety of fluorescent materials and phosphorescent materials. [0153]
  • Generally, a metal having a low work function or a metal alloy, a metal oxide, and the like, containing such a low work function metal is mainly used as the cathode material. Specifically, the cathode material includes, for example, a single body of a metal, for example, an alkaline metal such as Li, and the like, an alkaline earth metal such as Mg, Ca, and the like, a rare earth metal such as Eu, and the like, and a metal alloy of these metals and Al, Ag, In, and the like. Furthermore, in the device construction suggested by the inventors in Japanese Laid-open Patent Application Nos. 10-270171 and 2001-102175, in which a metal-doped organic layer is used in an interfacial surface between a cathode and an organic layer, any electrically conducting material may be used as the cathode material. In this construction, the selection of the cathode material is not restricted by properties such as work function of the selected material. [0154]
  • Moreover, if an organic layer adjacent to a cathode is constructed from an organic metal complex compound containing at least one of alkaline metal ions, alkaline earth metal ions and rare metal ions using the technologies disclosed by the inventors in their Japanese Laid-open Patent Application Nos. 11-233262 and 2000-182774, a metal capable of reducing a metal ion contained in the complex compound in vacuum to the corresponding metal, for example, a thermally reducible metal such as Al, Zr, Ti, Si, and the like, or an alloy including these metals may be used as the cathode material. Among these metals, aluminum (Al) which is generally and widely used as a wiring material is particularly desired as the cathode material in view of its easy vapor deposition, high light reflectance and chemical stability. [0155]
  • Similarly, the anode material is not restricted to a specific material. For example, a transparent conducting material such as ITO (indium tin oxide), IZO (indium zinc oxide), and the like, can be used as the anode material. [0156]
  • Furthermore, assuming that an ITO coating is formed with a sputtering method using the process suggested in Japanese Patent Application No. 2001-142672 to avoid damage in an organic layer, a transparent conducting material such as above described ITO and IZO may be used as the cathode material if a metal-doped organic layer described in Japanese Laid-open Patent Application No. 10-270171 is used as an electron injection layer in the manner described above. Accordingly, it becomes possible to produce a transparent light-emitting device by forming both of the cathode and the anode as a transparent electrode, because the organic layer and the charge generation layer are also transparent. Alternatively, contrary to the structure of the above-described general organic EL device, if an anode is formed from any metal material and a cathode is formed as a transparent electrode, it is possible to provide a device structure in which the emitted light can be projected from a laminated-layers side of the device, not from a substrate side of the device. [0157]
  • In addition, the order of the steps for forming layers is not restricted to any specific order. Namely, the layer formation may not always be started from an anode side of the device, and the layers may be formed from a cathode side of the device. [0158]
  • In the organic EL device of the present invention, types of the material used in the formation of cathode and anode electrodes or the method for forming a charge injection layer adjacent to these electrodes may be based on well-known technology widely used in the conventional EL devices, providing that two or more light-emissive units are contained between the opposed cathode and anode electrodes and each light-emissive unit is partitioned by a charge generation layer having a resistivity of not less than 1.0×10[0159] 2 Ωcm, desirably not less than 1.0×105 Ωcm.
  • The organic EL device of the present invention having a novel device structure is distinguishable from the conventional organic EL devices in view of the following notably different characteristics. [0160]
  • Firstly, in the organic EL device of the present invention, a theoretical limitation is not applied to the quantum efficiency of the device, whereas in the conventional EL devices, an upper limitation of the quantum efficiency which is a ratio of photon (number)/sec vs. electron (number)/sec, simply determined in an external circuit, is 1 (=100%) in theory. This is because an injection of hole (h[0161] +) shown in FIG. 2 means a generation of a radical cation as a function of withdrawal of electrons from a valance band (or HOMO, highest occupied molecular orbital) of an organic layer, and thus the electrons withdrawn from a valance band of the organic layer constituting a layer adjacent to the charge generation layer on a cathode side is injected into an electron conduction band (or LUMO, lowest unoccupied molecular orbital) of an organic layer constituting a layer adjacent to the layer on an anode side, thereby producing a light-emissive excitation state. Namely, the withdrawn electrons are again utilized in the formation of a light-emissive excitation state.
  • Accordingly, in the organic EL device of the present invention, the quantum efficiency thereof is calculated as a sum of the quantum efficiency of each light-emissive unit partitioned with a charge generation layer wherein the quantum efficiency is defined as a ratio of electrons (apparent number) passing thorough each light-emissive unit/sec vs. photons (number), emitted from each light-emissive unit/sec, and therefore the quantum efficiency has no upper limit. [0162]
  • Namely, the organic EL device of the present invention can still be operated as a planar and thin film-shaped light-emissive device capable of emitting light only from a crossed area of the cathode and the anode as in the conventional organic EL devices, although it has a circuit structure the same as that of the conventional devices in which plural EL devices are connected in series with a metal wiring, because the present device has a charge generation layer having a very thin and transparent layer structure and the charge generation layer is constructed from an (electrically) insulating layer having a resistivity which is substantially the same as that of the organic layer. [0163]
  • Although the organic EL device of the present invention is only constructed from an insulating material having a resistivity of not less than 1.0×10[0164] 2 Ωcm, desirably not less than 1.0×105 Ωcm, except for the electrodes, the organic EL device can be operated at a driving voltage which is a sum of the potential reduction amount (Vn) consumed in each of the light-emissive units, i.e., V=V1+V2+ . . . +Vn, because the present device is consequently operated just as if the plurality (n) of the conventional EL devices were connected in series. Accordingly, an advantage obtained in conventional devices, i.e., a low voltage driving at 10 volts or less, cannot be obtained in the present device with increase of the number (n) of the light-emissive units.
  • However, the organic EL device of the present invention still has some advantages over conventional organic EL devices. In conventional devices, since the luminance is substantially proportional to a current density, it was essentially required to apply a higher current density to obtain an increased luminance. On the other hand, since, as previously mentioned, the operational life-time of the device was inversely proportional to the current density (not to a driving voltage), a high luminance emission results in a shortened operational life-time of the device. [0165]
  • Contrary to the drawbacks of conventional devices, in the organic EL device of the present invention, if it is desired to obtain an n-times increased luminance at a desired current density, such a increase of the luminance can be attained by increasing the number of the light-emissive units (each having the same construction) used between the electrodes by n-times, without increasing the current density. [0166]
  • In this method, the driving voltage will be also increased to a level of n-times or more. However, it should be noted that an unexpected and important advantage is that an n-times increased luminance can be achieved without sacrificing the operational life-time. [0167]
  • Furthermore, in the organic EL device of the present invention, a layer thickness between the cathode and the anode can be naturally increased by increasing the number of the light-emissive units used therein. For example, assuming that the number of the light-emissive units between the electrodes is “n”, a layer thickness of the present device is increased to about n-times of that of the conventional EL devices. In addition, since the number of the light-emissive units in the present device is not restrictive, a layer thickness between the electrodes is also not restrictive. In view of the fact that in conventional EL devices, a layer thickness between the electrodes of not exceeding 1 μm (practically, not more than 2000 Å (not more than 200 nm)) and that a driving voltage of 25 volts or less must be applied, the present EL device has an essentially different characteristics which cannot be found in the conventional EL devices (above mentioned Kodak Patent, Japanese Laid-open Patent Application Nos.59-194393, 63-264692 and 2-15595, U.S. Pat. Nos. 4,539,507, 4,769,292, and 4,885,211). [0168]
  • Namely, in the organic EL device of the present invention, there is no necessity to define an upper limit of the layer thickness between the electrodes, an upper limit of the driving voltage and an upper limit of the quantum efficiency (current efficiency). [0169]
  • On the other hand, in conventional organic EL devices, an increase of the driving voltage results only in a reduction of the power conversion efficiency (w/w). Conversely, according to the organic EL device of the present invention, in principle, the conversion efficiency (w/w) can be maintained without any change, because if “n” of the light-emissive units are introduced between the electrodes, the light-emission starting voltage (turn on voltage), and the like, are increased by about n-times, and accordingly the voltage for obtaining the desired luminance is increased by about n-times, and in addition to the increase of these voltages, the quantum efficiency (current efficiency) can be also increased by about n-times. [0170]
  • Moreover, the organic EL device of the present invention containing a plurality of the light-emissive units has a secondary advantage of being able to reduce the risk of short circuiting in the device. In conventional EL devices containing only one light-emissive unit, if an electrical short circuit is caused between a cathode and an anode due to presence of pin-holes, etc., in the layer of the unit, the EL devices could immediately change to a state of emitting no light. Conversely, in the organic EL device of the present invention, since the layer thickness between the electrodes is thick, a risk of short circuiting can be reduced, and at the same time, even if short circuiting is caused in some light-emissive units, the worst scenario result such as non-light emission can be avoided because the remaining light-emissive units can still emit light. Specifically, when the EL device is designed to be driven at a constant current, a driving voltage is only reduced by an amount corresponding to the short circuited units, and the remaining non-short circuited units can emit light normally. [0171]
  • In addition to the above advantages, for example, when the organic EL device of the present invention is applied to an EL display device having a simple matrix structure, a reduction of the current density means that a voltage reduction due to the wiring resistance and a temperature increase in the substrate can be largely reduced in comparison with a conventional display device. Furthermore, a higher driving voltage between the electrodes, which sandwich the light-emissive element portion, in comparison with the conventional devices means that a voltage reduction due to the wiring resistance does not largely cause a reduction of the luminance (the effect due the higher driving voltage can be sufficiently understood just from considering the influence of the possible potential reduction of 1 volt due to the wiring resistance to a reduction of the luminance in comparison with an EL device capable of providing a luminance of 1,000 cd/m[0172] 2 at 5 volts and an EL device capable of providing a luminance of 1,000 cd/m2 at 50 volts). This effect, in combination with another characteristic of the EL device of the present invention where the device naturally has a low voltage reduction in the wiring portion thereof, enables to achieve a display device controllable at a constant voltage which can not be provided using a conventional device.
  • Furthermore, the above-described characteristics advantageously affect other uses for obtaining an uniform light emission in a large surface area, in particular, for use as an illumination apparatus. In conventional organic EL devices, since an electrode material used therein, especially a transparent electrode material, typically ITO, etc., has a resistivity of up to 10[0173] −4 Ωcm, which is about 100 Ω cm higher than a resistivity of metal (up to 10−6 Ωcm), a voltage (V) or electric field E (V/cm) applied to the light-emissive unit reduces with an increase of the distance from a contact point of electric power, so that unevenness (difference of luminance) in the luminance occurs between a near portion to and a far portion from a contact point of electric power. Conversely, according to the organic EL device of the present invention, since an electric current in obtaining the desired luminance can be largely reduced in comparison with conventional EL devices, the potential reduction can be diminished with the result that substantially uniform light emission can be obtained in a large surface illumination apparatus.
  • Furthermore, in the formation of the charge generation layer, since the present invention is characterized by intentionally using a material having a considerably increased resistivity (of not less than 1.0×10[0174] 2 Ωcm, desirably not less than 1.0×10 Ωcm) than that of an ITO and other electrically conductive materials (about 10−4 Ωcm), a shadow mask for defining a vapor deposition area, which is with the same as that used in the formation of the patterned organic layer, can be used in the layer formation process of the charge generation layer, and thus the frequent change and precise positioning of the shadow mask can be excluded from the production process except for the formation of the electrodes. Namely, according to the present invention, it becomes possible to achieve a remarkably increased productivity.
  • FIG. 8 is a schematic cross-sectional view illustrating a laminated structure of the organic EL device according to an embodiment of the present invention. A glass substrate (transparent substrate) [0175] 1 includes, laminated in sequence thereon, a transparent electrode 2 constituting an anode electrode, a light-emissive unit 3-1, a charge generation layer 4-1, a light-emissive unit 3-2, a charge generation layer 4-2, . . . , a charge generation layer 4-(n-1), a light-emissive unit (3-n) wherein the n=1, 2, 3, . . . , and finally a cathode electrode (metal electrode) 5. In these elements (layers), the glass substrate (transparent substrate) 1, the transparent anode electrode 2, the light-emissive unit (3-n) wherein n is 1, 2, 3, . . . , and the cathode electrode 5 each is a well-known element (layer). The new feature in the EL device of the present invention resides in that a plurality of light-emissive units (3-n, wherein n is 1, 2, 3, . . . ) are contained between both electrodes and are partitioned with an electrically insulating charge generation layer (4-n, wherein n is 1, 2, 3, . . . ) having a resistivity of not less than 1.0×102 Ωcm.
  • Furthermore, in regard to organic EL devices, it is known that the characteristics thereof such as driving voltage, etc., can be varied depending upon the work function; the work function being one property of the electrode material. Referring to the organic EL device of the present invention, the charge generation layer [0176] 4-n used therein is not acting as an electrode. However, since an electron is injected into a direction of the anode electrode and a hole is injected in a direction of the cathode electrode, in the formation of the above-described components of the light-emissive unit, particularly the method for forming a electron injection (transporting) layer and a hole injection (transporting) layer, both being adjacent to a charge generation layer, is essential for reducing an energy barrier in the injection of the charge (electron and hole) into each light-emissive unit.
  • For example, if it is intended to inject an electron from each charge generation layer [0177] 4-n to a direction of the anode electrode, it is desirable that, as is disclosed in Japanese Laid-open Patent Application Nos. 10-270171 and 2001-102175, an electron injection layer having a mixed layer of an organic compound and a metal functioning as an electron donating (donor) dopant, is formed as a layer adjacent to the charge generation layer in anode side. The donor dopant desirably includes at least one metal selected from alkaline metals, alkaline earth metals and rare earth metals.
  • Furthermore, in the electron injection layer, a molar ratio of the metal as the donor dopant is desirably in the range of 0.1 to 10 with respect to the organic compound. A molar ratio of less than 0.1 results in a reduction of the doping effect because a concentration of the molecule reduced with the dopant (hereinafter, referred to as a “reduced molecule”) is reduced excessively. A molar ratio above 10 also results in a reduction of the doping effects because a concentration of the dopant in the layer is significantly increased in comparison with concentration of the organic compound, thus causing an excessive reduction of the reduced molecule in the layer. [0178]
  • The application of the above-described electron injection layer-containing structure to a light-emissive unit of the organic EL device achieves an energy barrier-free electron injection to each of the light-emissive units regardless of the work function of the material constituting a charge generation layer. [0179]
  • Furthermore, the light-emissive unit may have a structure in which an electron injection layer including a metal selected from alkaline metals, alkaline earth metals and rare earth metals, and having a layer thickness of up to 5 nm (desirably 0.2 to 5 nm) is disposed as a layer adjacent to the charge generation layer on an anode side. A layer thickness of above 5 nm is not desirable because it reduces a light transmittance, and at the same time, makes the device unstable because the content of the metal which has a high reactivity and is unstable in air is excessively increased in the layer. Moreover, in this metal layer having a layer thickness of up to 5 nm, it is considered that a substantial amount of the metal layer can be diffused into an organic layer to result in a layer having a composition which is substantially the same as that of the above-described metal doping layer. The resulting layer at least has no form of the metal layer having an electrical conductivity. [0180]
  • For example, if the electron is injected from each charge generation layer [0181] 4-n in the anode direction, it is also desirable that the electron injection layer, which is disclosed in Japanese Laid-open Patent Application Nos. 11-233262 and 2000-182774 (corresponding U.S. Pat. No. 6,396,209) (J. Endo, T.Matsumoto, and J. Kido, Jpn. J. Appl. Phys. Vol. 41 (2002) pp.L800-L803), is provided on the anode side of the charge generation layer. The electron injection layer of this type is explained as an “in-situ reaction generating layer” which is generated by depositing a thermally reducible metal such as aluminum on a compound containing an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion to reduce the metal ions into a metal condition. In the device of the present invention, it is desirable to supply the very thin thermally reducible metal on the compound by a minimum amount required for the reduction reaction. If the metal ion in the compound is reduced, the supplied thermally reducible metal itself is oxidized to be a insulative compound having a resistivity not less than 1.0×102 Ωcm. The very thin thermally reducible metal has a layer thickness not more than 10 nm. If the layer thickness of the thermally reducible metal is more than 10 nm, a metal atom, which does not contribute to the reduction reaction, remains so that the transparency and insulation property are lost.
  • In addition to an organic metal complex compound described in the above mentioned patent document (Japanese Laid-open Patent Application Nos.11-233262 and 2000-182774), an inorganic compound can be used as the compound including the alkaline metal ion, alkaline earth metal ion and rare earth metal ion, which are used for the above mentioned “in-situ reaction generating layer”. An oxide and halide including the alkaline metal ion, alkaline earth metal ion and rare earth metal ion can be used as the compound for the in-situ reaction generating layer, and further, any inorganic compound including the alkaline metal ion, alkaline earth metal ion and rare earth metal ion can be used as the compound. [0182]
  • Furthermore, it is also desirable to use different types of electron injection (transporting) layers in above mentioned Japanese Laid-open Patent Application Nos. 10-270171, 2001-102175, 11-233262 and 2000-182774 (corresponding to U.S. Pat. No. 6,396,209) in a superposed condition. The metal doping layer in the Japanese Laid-open Patent Application No. 10-270171 or 2001-102175 is desirably deposited on the organic layer (including light-emissive layer), by a predetermined thickness, as a low resistance electron transporting layer, then the in-situ reaction generating layer described in the Japanese Laid-open Patent Application Nos. 11-233262 and 2000-182774 is superposed on the metal doping layer. As mentioned above, a technical idea in which an electron injection layer contacting the cathode electrode of the conventional electroluminescent device is formed by using superposed different types of electron injection (transporting) layers is described in the Japanese Patent Application No. 2002-273656 by the inventors of the present invention. [0183]
  • In this case, the in-situ reaction generating layer contacts the charge generation layer on an anode side. According to the present invention, an interaction between a material used for the charge generation layer and a reactive metal such as alkaline metal can be avoided. As a result, it is found that such method is a desirable for forming an electron injection layer on a point that the electron injection barrier from the charge generation layer to the light emissive unit can be lowered. [0184]
  • Furthermore, for example in the injection of holes from each charge generation layer [0185] 4-n to a direction of the cathode electrode, a hole injection layer, suggested by the inventors in Japanese Laid-open Patent Application Nos. 11-251067 and 2001-244079, which contains a doped electron-accepting compound (Lewis acid compound) having a property of oxidizing an organic compound in terms of Lewis acid chemistry may be formed as a layer adjacent to the charge generation layer in a cathode side. Regardless of the work function of the material constituting the charge generation layer 4-n, hole injection in the absence of an energy barrier can be achieved.
  • Moreover, a layer of the electron-accepting compound (Lewis acid compound) which is very thin and thus ensures a transparency may be formed as a hole injection layer. In this method, a layer thickness of the hole injection layer is desirably 30 nm or less, more desirably in the range of 0.5 to 30 nm. The layer thickness above 30 nm causes a reduction of the light transmittance, and at the same time, makes the device unstable because a content of the Lewis acid compound which has a high reactiveness and is unstable in air is excessively included in the layer. [0186]
  • The electron-accepting compound (Lewis acid compound) used herein is not restricted to a specific compound. For example, electron-accepting compound includes an inorganic compound such as ferric chloride, ferric bromide, ferric iodide, aluminum chloride, aluminum bromide, aluminum iodide, gallium chloride, gallium bromide, gallium iodide, indium chloride, indium bromide, indium iodide, antimony pentachloride, arsenic pentafluoride, boron trifluoride, and the like, and an organic compound such as DDQ (dicyanodichloroquinone), TNF (trinitrofluorenone), TCNQ (tetracyanoquinodimethane), 4F-TCNQ (tetrafluoro-tetracyanoquinodimethane), and the like. [0187]
  • In the hole injection layer, a molar ratio of the organic compound and the electron-accepting compound (dopant compound) is desirably in the range of 0.01 to 10 with respect to the organic compound. A molar ratio of less than 0.01 results in a reduction of the doping effects because a concentration of the molecule oxidized with the dopant (hereinafter, referred also to an “oxidized molecule”) is excessively reduced. A molar ratio above 10 also results in a reduction of the doping effects because a concentration of the dopant in the layer is remarkably increased in comparison with concentration of the organic compound, thus causing an excessive reduction of a concentration of the oxidized molecule in the layer. [0188]
  • Further, if the material forming a charge generation layer has a work function of not less than 4.5 eV, it may be sometimes possible to inject holes to each light-emissive unit without specially using an electron-accepting compound (Lewis acid compound). [0189]
  • Conversely, as shown in Example 2 described hereinafter, the Lewis acid compound itself may sometimes act as a component of the charge generation layer. [0190]
  • In the light-emissive units used in the present invention, the layers which are formed in direct contact with the cathode or anode may have the same composition as that of the layer adjacent to the charge generation layer on an anode side or the layer adjacent to the charge generation layer on a cathode side, respectively, or the electron injection layer and the hole injection layer each may have some other compositions. Of course, the electron injection layer and the hole injection layer used in the conventional EL devices may be suitably used. [0191]
  • In comparison with conventional organic EL devices, the amount of time it takes for the layer to be formed in the production of the organic EL device of the present invention is necessarily longer. Furthermore, since the present method is characterized in that the substantially same processes are repeatedly carried out, conventional batch system-based vapor deposition apparatuses which are currently widely used for layer formation require an excessively long processing time. Moreover, an increase of the production costs is of concern because a large amount of expensive organic materials must be used, compared to conventional organic EL devices. [0192]
  • In such a case, it is suggested by the inventors in Japanese Patent Application No. 2001-153367 to use an in line-line system-based continuous layer formation apparatus. Using this apparatus, the time required for layer formation can be largely shortened and the efficiency of materials use can be increased so as to approach 100%. [0193]
  • Furthermore, in the formation of the organic layer, the charge generation layer and the electrode layer which constitute the organic EL device of the present invention, any well-known deposition method which is conventionally used such as a resistive heating vapor deposition method, an electron beam vapor deposition method, a laser beam vapor deposition method, a sputtering method, and the like, can be used. [0194]
  • In particular, when an inorganic substance or compound such as metal oxide is used as an element for forming a charge generation layer, a vapor deposition method must be carried out with care, because there is a tendency that a deposited layer may have a composition which is outside of the desired stoichiometric composition due to separation, etc., of oxygen atoms from the compound. [0195]
  • Furthermore, when an inorganic substance or compound is deposited using a sputtering method, it is important to use a method in which a substrate having the formed organic layer is disposed separately from the plasma generated during the deposition process to thereby avoid damage of the organic layer. At the same time, it is also important that the molecules of the sputtered inorganic compounds are softly deposited on the organic layer with a kinetic energy up to a predetermined level in order to reduce damage in the device. [0196]
  • For example, the facing target sputtering apparatus in which a pair of opposed targets arranged separately from each other at a certain distance have a reflection electrode for reflecting electrons against a front peripheral portion of each of the targets, and a -magnetic field generating device which is included to form a parallel magnetic field having a portion parallel to a surface of the target in the vicinity of the peripheral portion of each target (see, Japanese Patent Application No. 2001-142672) can be suitably used in the formation of the charge generation layer of the present invention, too. [0197]
  • In addition, all the layers to be formed on a substrate can be formed by the vapor deposition method in which all layers are formed on a substrate by heating a vaporizable material in a vacuum to deposit a vaporized or sublimed material on the substrate, and includes transporting a substrate in a direction of a planar surface thereof, a deposition area being open in a lower surface of the substrate; providing a container, in a lower position of the transporting substrate, including a vaporizable material having a deposition width which can cover the deposition area extending in a direction perpendicular to the transportation direction of the substrate; and heating the container, thereby vaporizing or subliming and thus depositing the vaporizable material in the container (Japanese Patent Application No.2001-153367). [0198]
  • Furthermore, contrary to conventional EL devices, using the organic EL device of the present invention, the highest light emission efficiency can be obtained when an optical path length from light-emissive site to light-reflective electrode is almost an odd-numbered times greater than a quarter wavelength of light, i.e., λ×(2n-1)/4 wherein n is 1, 2, 3, . . . , since an important feature in the present invention is that two or more light-emissive site are provided at intervals. [0199]
  • In conventional EL devices, a structure is adopted wherein an optical path length from light-emissive site to light-reflective electrode is adjusted to approximately an odd-numbered times a quarter wavelength of light. In such devices, even if the organic layer is formed at a larger thickness above the quarter wavelength of light, the result is only an undesirable increase of the driving voltage. [0200]
  • However, as disclosed in above mentioned Japanese Laid-open Patent Application No. 2001-102175, if a combination of the electron transporting organic compound and the alkaline metal (both constituting an electron injection layer adjacent to a light-reflective cathode) are appropriately selected, it becomes possible to inhibit an increase of the driving voltage at a larger layer thickness of about 1 μm, and a color hue (namely, a profile of the emission spectrum) can be largely changed because an interference effect can be remarkably increased with an increase of the layer thickness. [0201]
  • For example, assuming that an optical path length of the electron injection layer is adjusted to be approximately an odd-numbered times a quarter wavelength of light, i.e., λ×(2n−1)/4 wherein n is 1, 2, 3, . . . , a profile of the resulting emission spectrum is narrowed by an increase of n. On the other hand, if an optical path length of the electron injection layer is adjusted to be approximately an even-numbered times a quarter wavelength of light, i.e., λ×(2n)/4 wherein n is 1, 2, 3, . . . , there arises a notable interference effect with an increase of n, with the result that the emission efficiency is largely deteriorated because an emission in the original light-emitting peak is offset with the notable interference effect. [0202]
  • Accordingly, when the organic EL device has the resultant structure in which n is large and a plurality of light-emissive site are contained as in the EL device of the present invention, it is essential to exactly control the layer thickness from each light-emissive site to a light-reflective electrode. [0203]
  • To be free from such troublesome fine adjustment of layer thickness, it is desirable to construct the cathode electrode, which was light reflective electrode conventionally when the anode electrode is a transparent electrode, a non-reflective black electrode, or to construct at least one layer existed in the cathode electrode direction so as to function as a light absorbing layer. Accordingly, problems with light interference can be avoided. [0204]
  • Conversely, if the anode electrode is the light reflective electrode, it is desirable that the anode electrode itself or at least one layer existing in the anode electrode direction have a light absorbing function. [0205]
  • If a light diffuse reflection surface is provided on one of the electrodes when the other electrode is the transparent electrode, problems with light interference can be avoided in theory. [0206]
  • Furthermore, as is shown in the appended examples, another feature of the present invention is that the light-emissive units each have different emission colors so that a desired mixed (superimposed) color emission can be obtained. In this case, it is also necessary to optimize the optical path length from light-emissive site to light-reflective electrode in the manner described above. The necessity for the optimization of the layer thickness will depend on the emission color in each light-emissive unit. [0207]
  • EXAMPLES
  • The present invention will be further described with reference to the examples below. Note, however, that the present invention is not restricted to these examples. [0208]
  • In the following examples, the vapor deposition of the organic compound and the metal, as well as formation of the charge generation layer, was carried out by using a vapor deposition apparatus commercially available from VIEETECH JAPAN. The control of the deposition rate of the vapor deposition material and of the thickness of the deposited layers is carried out by using a thickness monitor, provided with a quartz oscillator and attached to the vapor deposition apparatus, “CRTM-8000” commercially available from ULVAC. Furthermore, to determine an actual layer thickness after the layer formation, a stylus step meter “P10” commercially available from Tencor, Co., was used. Furthermore, the characteristics of the organic EL device were evaluated with the source meter “2400”, commercially available from KEITHLEY, and the luminance meter “BM-8”, commercially available from TOPCON. A DC voltage was stepwise applied at an increasing rate of 0.2 volts per 2 seconds to the EL device having an ITO anode and an aluminum (Al) cathode, and the luminance and the electric current were determined after a lapse of one second from the completion of each increase of the voltage. The EL spectrum was determined by using the optical multi-channel analyzer, “PMA-11” commercially available from HAMAMATSU PHOTONICS, driven at a constant electric current. [0209]
  • REFERENCE EXAMPLE 1
  • (Example for the Production of the Conventional Organic EL Device-Green Light-Emitting Device) [0210]
  • The conventional organic EL device having a laminate structure shown in FIG. 9 was produced as follows. [0211]
  • A glass substrate [0212] 1 used herein includes, coated in the predetermined pattern on a surface thereof, a transparent anode electrode 2 including an ITO (indium-tin oxide, sputtered product commercially available from ASAHI GLASS, or ion plating product commercially available from Nippon Sheet Glass Co., Ltd.) having a sheet resistance of about 20 Ω/□ (Ω/sq.) (see, FIG. 10A). Alpha(A)-NPD having a hole transporting property was deposited, through a metal mask (shadow mask) 40 for organic layer formation (see FIG. 10B), onto the ITO-coated glass substrate 1 under vacuum of about 10−6 Torr and at a deposition rate of about 2 Å/sec to form a hole transportation layer 6 having a thickness of about 700 Å.
  • An organic-metal complex of tris(8-quinolinolato) aluminum (hereinafter, briefly referred to as “Alq”) is represented by the following formula: [0213]
    Figure US20030189401A1-20031009-C00007
  • and a coumarin derivative which is a green light-emissive fluorescent dye, “C545T” (trade name) commercially available from KODAK, were deposited onto the hole transportation layer [0214] 6 under vacuum vapor deposition conditions to form a light-emissive layer 7 having a thickness of about 400 Å. Each deposition rate was adjusted so that the resulting light-emissive layer 7 contains a fluorescent dye in a concentration of about 1% by weight.
  • Thereafter, bathocuproine represented by the following formula: [0215]
    Figure US20030189401A1-20031009-C00008
  • and metal cesium (Cs) in a molar ratio of about 1:1 were co-deposited under vacuum vapor deposition conditions to form a metal (Cs)-doped electron injection layer [0216] 8 having a thickness of about 200 Å on the light-emissive layer 7. Each deposition rate was adjusted to obtain the molar ratio of about 1:1.
  • Finally, aluminum (Al) was deposited through a metal mask (shadow mask) [0217] 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of about 10 Å/sec onto the electron injection layer 8 to form a cathode electrode 5 having a thickness of about 1,000 Å. An organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D).
  • FIG. 16 shows an emission spectrum of the resultant organic EL device. [0218]
  • In this organic EL device, a DC voltage was applied between the anode electrode (ITO) and the cathode electrode (Al), and the characteristics of the green light emitted from the light-emissive layer (co-deposited layer of Alq and C545T) [0219] 7 were measured to obtain the results plotted in FIGS. 21, 22 and 23.
  • In FIGS. 21, 22 and [0220] 23, the circle symbols (O) designate the luminance (cd/m2)-voltage (v) characteristic curve, a graph of current density (mA/cm2)-voltage (v) characteristic curve and a graph of current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of the EL device of Reference Example 1.
  • In the EL device of Reference Example 1, a voltage at which the emission was started was 2.2 volts. [0221]
  • Reference Example 2
  • (Example for the Production of the Conventional Organic EL Device-Blue Light-Emitting Device) [0222]
  • A conventional organic EL device having a laminate structure shown in FIG. 11 was produced in accordance with the manner similar to Reference Example 1 as follows. [0223]
  • A glass substrate [0224] 1 used herein includes, coated in the predetermined pattern on a surface thereof, a transparent anode electrode 2 including an ITO (indium-tin oxide, sputtered product commercially available from ASAHI GLASS) having a sheet resistance of about 20 Ω/□ (see, FIG. 10A). Spiro-NPB having a hole transporting property was deposited, through a metal mask 40 for organic layer formation (see, FIG. 10B), onto the ITO-coated glass substrate 1 under vacuum of about 10−6 Torr and at a deposition rate of about 2 Å/sec to form a hole transportation layer 9 having a thickness of about 800 Å.
  • Spiro-DPVBi represented by the following formula: [0225]
    Figure US20030189401A1-20031009-C00009
  • was deposited onto the hole transportation layer [0226] 9 under vacuum vapor deposition conditions to form a light-emissive layer 10 having a thickness of about 400 Å.
  • Thereafter, as in Reference Example 1, bathocuproine and metal cesium (Cs) in a molar ratio of about 1:1 were co-deposited under the controlled vacuum vapor deposition conditions to form a metal (Cs)-doped electron injection layer [0227] 11 having a thickness of about 200 Å on the light-emissive layer 10.
  • Finally, aluminum (Al) was deposited through a metal mask [0228] 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of about 10 Å/sec onto the electron injection layer 11 to form a cathode electrode 5 having a thickness of about 1,000 Å. An organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D) In FIG. 17, an emission spectrum of the resultant organic EL device (Reference Example 2) is shown as a dotted line.
  • In this organic EL device, a DC voltage was applied to between the anode electrode (ITO) and the cathode electrode (Al), and the characteristics of the blue light emitted from the light-emissive layer (spiro-DPVBi) [0229] 10 were measured to obtain the results plotted in FIGS. 24, 25 and 26.
  • In FIGS. 24, 25 and [0230] 26, white circle symbols (O) represent a graph of luminance (cd/m2)-voltage (v) characteristic curve, a graph of current density (mA/cm2)-voltage (v) characteristic curve and a graph of current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of the EL device of Reference Example 2.
  • In the EL device of Reference Example 2, the voltage at which the emission was started was 2.6 volts. [0231]
  • Reference Example 3
  • (Example for the Production of the Conventional Organic EL Device-Red Light-Emitting Device) [0232]
  • A conventional organic EL device having a laminate structure shown in FIG. 12 was produced in a manner similar to Reference Example 1 as follows. [0233]
  • A glass substrate [0234] 1 used herein includes, coated in the predetermined pattern on a surface thereof, a transparent anode electrode 2 including an ITO (indium-tin oxide, sputtered product commercially available from ASAHI GLASS) having a sheet resistance of about 20 Ω/F (see, FIG. 10A). α-NPD having a hole transporting property was deposited, through a metal mask 40 for organic layer formation (see, FIG. 10B), onto the ITO-coated glass substrate 1 under vacuum of about 10−6 Torr and at a deposition rate of about 2 Å/sec to form a hole transportation layer 12 having a thickness of about 700 Å.
  • Alq and a red light-emissive fluorescent dye, “DCJTB” (trade name) commercially available from KODAK, were deposited onto the hole transportation layer [0235] 12 under the vacuum vapor deposition conditions to form a light-emissive layer 13 having a thickness of about 400 Å. Each deposition rate was adjusted so that the resulting light-emissive layer 13 contains the fluorescent dye in a concentration of about 1% by weight.
  • Thereafter, as in Reference Example 1, bathocuproine and metal cesium (Cs) in a molar ratio of about 1:1 were co-deposited under the controlled vacuum vapor deposition conditions to form a metal (Cs)-doped electron injection layer [0236] 14 having a thickness of about 200 Å on the light-emissive layer 13.
  • Finally, aluminum (Al) was deposited through a metal mask [0237] 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of about 10 Å/sec onto the electron injection layer 11 to form a cathode electrode 5 having a thickness of about 1,000 Å. An organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D).
  • In FIG. 17, an emission spectrum of the resultant organic EL device (Reference Example 3) is shown with a chain line. [0238]
  • In this organic EL device, a DC voltage was applied to between the anode electrode (ITO) and the cathode electrode (Al), and the characteristics of the red light emitted from the light-emissive layer (co-deposited layer of Alq and DCJTB) [0239] 13 were measured to obtain the results plotted in FIGS. 24, 25 and 26.
  • In FIGS. 24, 25 and [0240] 26, plus symbols (+) represent a graph of luminance (cd/m2)-voltage (v) characteristic curve, a graph of current density (mA/cm2)-voltage (v) characteristic curve and a graph of current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of the EL device (Reference Example 3).
  • In the EL device of Reference Example 3, a voltage at which the emission was started was 2.2 volts. [0241]
  • Example 1
  • (Example for the Production of the Organic EL Device having a Charge Generation Layer Including V[0242] 2O5, Vanadium Pentaoxide)
  • The organic EL device according to the present invention having a laminate structure shown in FIG. 13 was produced as follows. [0243]
  • In accordance with the manner and order described in Reference Example 1, a light-emissive unit [0244] 3-1 was deposited through a metal mask 40 for organic layer formation (see, FIG. 10B) on an ITO pattern-coated glass substrate 1 shown in FIG. 10A. Namely, a 600 Å-thick α-NPD, a 400 Å-thick layer including Alq:C545T=100:1 (weight ratio), and a 200 Å-thick mixed layer including bathocuproine and metal cesium (Cs) were sequentially deposited.
  • Subsequently, V[0245] 2O5 (vanadium pentaoxide) was deposited onto the metal-doped layer at a deposition rate of about 2 Å/sec to form a charge generation layer 4-1 having a thickness of about 100 Å. The formation of the charge generation layer 4-1 was also carried out in the presence of the metal mask 40 for organic layer formation (see, FIG. 10B).
  • Thereafter, while the metal mask [0246] 40 for organic layer formation (FIG. 10B) is still on the glass substrate 1, the above-described step was again repeated to form a light-emissive unit 3-2. Namely, a 600 Å-thick α-NPD, a 400 Å-thick layer including Alq:C545T=100:1 (weight ratio), and a 200 Å-thick mixed layer including bathocuproine and a metal cesium (Cs) were sequentially deposited.
  • Finally, aluminum (Al) was deposited through a metal mask [0247] 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of about 10 Å/sec onto the light-emissive unit 3-2 to form a cathode electrode 5 having a thickness of about 1,000 Å. An organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D).
  • In this organic EL device, a DC voltage was applied to between the anode electrode (ITO) and the cathode electrode (Al), and the characteristics of the green light emitted from the light-emissive layer (co-deposited layer of Alq and C545T) were measured to obtain the results plotted in FIGS. 21, 22 and [0248] 23. In FIGS. 21, 22 and 23, white square symbols (□) represent a graph of luminance (cd/m2)-voltage (v) characteristic curve, a graph of current density (mA/cm2)-voltage (v) characteristic curve, and a graph of current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of the EL device of Example 1.
  • In this EL device, a voltage at which the emission was started was 4.4 volts, i.e., exactly 2 times of the voltage observed in Reference Example 1. [0249]
  • As can appreciated from the above results, the organic EL device which includes two light-emissive units, each partitioned with a charge generation layer, achieves an increased maximum current efficiency (and thus the quantum efficiency) by about 2 times in comparison with the organic EL device of Reference Example 1. [0250]
  • In the EL device of Example 1, it is considered that an oxidation-reduction reaction was induced between the molecules of vanadium pentaoxide (V[0251] 2O5) and α-NPD, an arylamine compound which acts as a hole transporting molecule, to form a charge transfer complex (V2O5 +α-NPD+). Namely, an interfacial surface between the vanadium pentaoxide (V2O5) layer and the α-NPD layer acts as a charge generation layer.
  • In FIG. 16, an emission spectrum of the resultant organic EL device is shown by a chain line. Referring to the plotted emission spectrum, it is observed that the spectrum is substantially the same as that of Reference Example 1, however, a full width at half maximum of the spectrum is slightly narrowed in comparison with that of Reference Example 1. It therefore can be concluded that this is due to the generated interference effect. Namely, an interference effect was generated in the two light-emissive units because a light emitted from the firstly formed light-emissive unit [0252] 3-1 was reflected on the cathode, and the reflected light had a phase which substantially corresponds to a phase of the light directly projected in the direction of the substrate from the emissive site.
  • Example 2
  • (Example for the Production of the Organic EL Device Having a Charge Generation Layer Consisting Only of an Organic Compound) [0253]
  • The organic EL device according to the present invention having a laminate structure shown in FIG. 14 was produced as follows. [0254]
  • In accordance with the manner which is substantially the same as that described in Reference Example 1, a light-emissive unit [0255] 3-1 was deposited through a metal mask 40 for organic layer formation (see, FIG. 10B) on an ITO pattern-coated glass substrate 1 shown in FIG. 10A. Namely, a 700 Å-thick α-NPD, a 400 Å-thick layer including Alq:C545T=100:1 (weight ratio), and a 200 Å-thick mixed layer including bathocuproine and metal cesium (Cs) were sequentially deposited. 4F-TCNQ represented by the following formula:
    Figure US20030189401A1-20031009-C00010
  • was deposited onto the metal-doped layer at a deposition rate of about 1 Å/sec to form a charge generation layer [0256] 4-1 having a thickness of about 20 Å. 2-TNATA (product of BANDO CHEMICAL) was deposited onto the charge generation layer 4-1 at a deposition rate of about 1 Å/sec to obtain a layer thickness of about 50 Å.
  • The formation of the charge generation layer [0257] 4-1 was also carried out in the presence of the metal mask 40 for organic layer formation (see, FIG. 10B).
  • Thereafter, while the metal mask [0258] 40 for organic layer formation (FIG. 10B) is still on the glass substrate 1, the above-described step was again repeated to form a light-emissive unit 3-2. Namely, a 700 Å-thick α-NPD, a 400 Å-thick layer including Ala:C545T=100:1 (weight ratio), and a 200 Å-thick mixed layer including bathocuproine and a metal cesium (Cs) were sequentially deposited.
  • Finally, aluminum (Al) was deposited through a metal mask [0259] 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of about 10 Å/sec onto the light-emissive unit 3-2 to form a cathode electrode 5 having a thickness of about 1,000 Å. The organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D).
  • In this organic EL device, a DC voltage was applied between the anode electrode (ITO) and the cathode electrode (Al), and the characteristics of the green light emitted from the light-emissive layer (co-deposited layer of Alq and C545T) were measured to obtain the results plotted in FIGS. 21, 22 and [0260] 23.
  • In FIGS. 21, 22 and [0261] 23, the plus symbols (+) represent a graph of luminance (cd/m2)-voltage (v) characteristic curve, a graph of current density (mA/cm2)-voltage (v) characteristic curve and a graph of current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of the EL device of Example 2.
  • In the EL device of Example 2, it is considered that a charge transfer complex (4F-TCNQ−+2-TNATA+) was formed between the two organic molecules, i.e., 4F-TCNQ which is a Lewis acid and 2-TNATA which is a hole transporting arylamine molecule. Namely, an interfacial surface between the 4F-TCNQ layer and the 2-TNATA layer acts as a charge generation layer. [0262]
  • Furthermore, in this EL device, it was observed that the current efficiency was gradually reduced from a luminance of about 30 cd/M[0263] 2 (current density=0.12 mA/cm2), but the maximum current efficiency of about 25.6 cd/A was obtained at a current density range of up to about 0.1 MA/cm2. The maximum current efficiency of about 25.6 cd/A is a value which could not be obtained in the conventional organic EL devices having only one light-emissive unit, and proves that the charge generation layer can be formed by using only an organic compound.
  • Example 3
  • (Example for the Production of the Organic EL Device Having Two Light-Emissive Units Having Different Emission Spectrums) [0264]
  • The organic EL device according to the present invention having a laminate structure shown in FIG. 15 was produced as follows. [0265]
  • As in Reference Example 1, a glass substrate [0266] 1 includes, coated in a predetermined pattern on a surface thereof, a transparent anode electrode 2 including an ITO (indium-tin oxide, sputtered product commercially available from ASAHI GLASS) having a sheet resistance of about 20 Ω/□ (see, FIG. 10A). On the ITO pattern-coated glass substrate 1, in the same order as in Reference Example 2, spiro-NPB having a hole transporting property (product of COVION) was deposited through a metal mask 40 for organic layer formation (see, FIG. 10B) onto the ITO-coated glass substrate 1 under vacuum of about 10−6 Torr and at a deposition rate of about 2 Å/sec to form a hole transportation layer of the light-emissive unit 3-1 having a thickness of about 800 Å.
  • Subsequently, spiro-DPVBi (product of COVION) was deposited onto the hole transportation layer at a deposition rate of about 2 Å/sec to form a blue light-emissive layer of the light-emissive unit [0267] 3-1 having a thickness of about 400 Å, followed by depositing a 200 Å-thick mixed layer including bathocuproine and a metal cesium (Cs).
  • Subsequently, as in Example 1, V[0268] 2O5 (vanadium pentaoxide) was deposited onto the mixed layer including bathocuproine and Cs at a deposition rate of about 2 Å/sec to form a charge generation layer 4-1 having a thickness of about 100 Å. The formation of the charge generation layer 4-1 was also carried out in the presence of the metal mask 40 for organic layer formation (see, FIG. 10B).
  • Thereafter, as in Reference Example 3, α-NPD was deposited at a layer thickness of about 700 Å to form a hole transportation layer of the light-emissive unit [0269] 3-2. Subsequently, Alq and a red light-emissive fluorescent dye, “DCJTB” (KODAK), were deposited onto the hole transportation layer to form a red light-emissive layer having a thickness of about 400 Å. Each deposition rate was adjusted so that the resulting red light-emissive layer contains the fluorescent dye in a concentration of about 1% by weight. Subsequently, as in the manner described above, a 200 Å-thick mixed layer including bathocuproine and Cs was deposited.
  • Finally, aluminum (Al) was deposited through a metal mask [0270] 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of about 10 Å/sec onto the mixed layer of bathocuproine and Cs to form a cathode electrode 5 having a thickness of about 1,000 Å. The organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D).
  • In FIG. 17, an emission spectrum of the organic EL device obtained in Example 3 is shown with a solid line. In this organic EL device, a DC voltage was applied to between the anode electrode (ITO) and the cathode electrode (Al). As a result, a light emission of the mixed color of blue and red (pink-colored emission) could be obtained from the two light-emissive layers. FIG. 39A is a photograph showing an emission state in this device (FIG. 39B). [0271]
  • Subsequently, the characteristics of the device were measured to obtain the results plotted in FIGS. 24, 25 and [0272] 26. In these drawings, white square symbols (□) represent a graph of luminance (cd/m2)-voltage (v) characteristic curve, a graph of current density (mA/cm2)-voltage (v) characteristic curve, and a graph of current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of the EL device of Example 3.
  • In the EL device of Example 3, a voltage at which the emission was started was about 4.8 volts. Namely, the starting voltage of about 4.8 volts is a sum of the starting voltage (2.6 volts) of the device of Reference Example 2 and the starting voltage (2.2 volts) of the device of Reference Example 3. [0273]
  • Furthermore, in the EL device of Example 3, as in Example 1, it is considered that an oxidation-reduction reaction was induced between the molecules of vanadium pentaoxide (V[0274] 2O5) and α-NPD, an arylamine compound which acts as a hole transporting molecule, to form a charge transfer complex (V2O5 +α-NPD+). Namely, an interfacial surface between the vanadium pentaoxide (V2O5) layer and the α-NPD layer acts as a charge generation layer.
  • Example 4
  • (Example for the Production of the Organic EL Device Having Three Light-Emissive Units; Experiments for Optimizing the Optical Path Length, a Distance from Each Light-Emissive Site to a Reflective Cathode.) [0275]
  • The organic EL device according to the present invention having a laminate structure shown in FIG. 18 was produced as follows. [0276]
  • Three sheets of the ITO pattern-coated glass substrate [0277] 1 were provided. In accordance with the manner and order described in Reference Example 1, a light-emissive unit 3-1 was deposited through a metal mask 40 for organic layer formation (see, FIG. 10B) on the ITO pattern-coated glass substrate 1 shown in FIG. 10A. Namely, a 700 Å-thick α-NPD, a 600 Å-thick layer including Alq:C545T=100:1 (weight ratio), and a 100 Å-thick mixed layer including bathocuproine and a metal cesium (Cs) were sequentially deposited on each ITO pattern-coated glass substrate 1.
  • Subsequently, V[0278] 2O5 (vanadium pentaoxide) was deposited onto the metal-doped layer at a deposition rate of about 2 Å/sec to form a charge generation layer 4-1 having a thickness of about 300 Å. The formation of the charge generation layer 4-1 was also carried out in the presence of the metal mask 40 for organic layer formation (see, FIG. 10B).
  • Thereafter, while the metal mask [0279] 40 for organic layer formation (FIG. 10B) is still on the glass substrate 1, the above-described step was again repeated to form a light-emissive unit 3-2 and a light-emissive layer 3-3. Note, in this example, that to ascertain the optimum conditions for an optical path length from each light-emissive site to a reflective cathode, a layer thickness of the hole transportation layer including α-NPD was varied with intention to obtain three different cells having the hole transportation layer of the thickness of about 300, 500 or 700 Å.
  • Namely, a 300, 500 or 700 Å-thick α-NPD, a 600 Å-thick layer including Alq C545T=100:1 (weight ratio), and a 100 Å-thick mixed layer including bathocuproine and a metal cesium (Cs) were sequentially deposited on each substrate to form a light-emissive unit [0280] 3-2. Subsequently, V2O5 (vanadium pentaoxide) was deposited at a deposition rate of about 2 Å/sec to form a charge generation layer 4-2 having a thickness of about 300 Å.
  • After formation of the charge generation layer [0281] 4-2, the above-described process was again repeated. That is, a 300, 500 or 700 Å-thick α-NPD, a 600 Å-thick layer including Alq:C545T=100:1 (weight ratio), and a 100 Å-thick mixed layer including bathocuproine and a metal cesium (Cs) were sequentially deposited on the charge generation layer 4-2 to form a light-emissive unit 3-3.
  • Finally, aluminum (Al) was deposited through a metal mask [0282] 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of about 10 Å/sec onto the light-emissive unit 3-3 to form a cathode electrode 5 having a thickness of about 1,000 Å. The organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D).
  • In the resulting organic EL device, a DC voltage was applied to between the anode electrode (ITO) and the cathode electrode (Al) to measure the characteristics of the green light emitted from the light-emissive layer (co-deposited layer of Alq and C545T). The results plotted in FIGS. 27, 28 and [0283] 29 were obtained. In these figures, the symbols ∘, □ and + each represents a graph of the luminance (cd/m2)-voltage (v) characteristic curve, a graph of the current density (mA/cm2)-voltage (v) characteristic curve, and a graph of the current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of each of the EL devices having the three different thickness described above.
  • As shown in FIG. 29, the EL devices having the three different thickness each have a largely varied current efficiency (cd/A). In the devices having the light-emissive units [0284] 3-2 and 3-3 having a thickness of about 700 Å in the hole transportation layer, a maximum current density exceeding about 48 cd/A was obtained, while in the devices including the light-emissive units 3-2 and 3-3 having a thickness of about 300 or 500 Å in the hole transportation layer, the current density obtained was only about 18 or 28 cd/A.
  • The EL device including the light-emissive units [0285] 3-2 and 3-3 having a thickness of about 700 Å in the hole transportation layer show that they have a current efficiency of about 16 cd/A (48/3 cd/A) per a light-emissive unit, and thus they represent the optimized examples in which in all of the three light-emissive sites, an optical path length (product of a real layer thickness and an index of refraction) from the light-emissive site to the Al cathode (light reflective cathode) is always approximately an odd-numbered times a quarter wavelength of light, i.e., in this example, the layer thickness is ¼ wavelength, ¾ wavelength and {fraction (5/4)} wavelength of the emission wavelength, respectively, from an Al cathode side of the device.
  • An emission spectrum of each of the three organic EL devices obtained in Example 4 is shown in FIG. 19. Furthermore, the emission spectrum of the device showing the maximum current efficiency (48 cd/A), selected from all the emission spectrums of the devices of Example 4, is also plotted in FIG. 16 for the comparison with the spectrum of the device (one light-emissive unit) of Reference Example 1 and the spectrum of the device (two light-emissive units) of Example 1. [0286]
  • Example 5
  • (Example for the Production of the Organic EL Device Including Two Light-Emissive Units Having Different Emission Spectrums; Experiments for Optimizing the Optical Path Length, a Distance from Each Light-Emissive Site to a Reflective Electrode.) [0287]
  • Three sheets of the ITO pattern-coated glass substrate were provided, and in accordance with the process which is substantially the same as that of Example 3, a blue light-emissive unit and a red light-emissive unit were deposited through a V[0288] 2O5 (vanadium pentaoxide) of the charge-generation layer 4-1 with the proviso that, in this example, for the purpose of ascertaining the optimum conditions for an optical path length of from a blue light-emissive site of the light-emissive unit 3-1 to the light reflective electrode, a layer thickness of the hole transportation layer including α-NPD of the light-emissive unit 3-2 was varied with intention to obtain three different cells having the hole transportation layer of the thickness of about 300, 500 or 700 Å. Other layer deposition conditions and measurement conditions are with the same as those of Example 3.
  • In FIGS. 30, 31 and [0289] 32, the symbols □, + and ∘ each represents a graph of the luminance (cd/m2)-voltage (v) characteristic curve, a graph of the current density (mA/cm2)-voltage (v) characteristic curve, and a graph of the current efficiency (cd/A)-current density (mA/cm2) characteristic curve, respectively, of each of the EL devices having the three different thickness obtained in this example.
  • Furthermore, an emission spectrum of each of the three organic EL devices obtained in this example (Example 5) is shown in FIG. 20. [0290]
  • As shown in FIG. 32, the EL devices having the three different thicknesses each had a largely varied current efficiency (cd/A). In the devices including the light-emissive unit [0291] 3-2 having a thickness of about 700 Å in the hole transportation layer, a maximum current density exceeding about 8 cd/A was obtained, while in the devices including the light-emissive unit 3-2 having a thickness of about 300 or 500 Å in the hole transportation layer, the current density obtained was only about 6.5 or 4 cd/A.
  • The EL device including the light-emissive unit [0292] 3-2 having a thickness of about 700 Å had an optical path length (product of a real layer thickness and an index of refraction) from the light-emissive site of spiro-DPVBi (blue light-emissive material) to the Al cathode (light reflective electrode) of about three times a quarter wavelength of light. Namely, the EL device is an example of an optimized device.
  • Example 6
  • (Example for the Production of the Organic EL Device in Which a Layer Contacting a Charge Generation Layer on an Anode Side is an In-Situ Reaction Generating Layer, and Having a Charge Generation Layer Consisting of the Mixture of V[0293] 2O5 and Arylamine Compound.)
  • The organic EL device according to the present invention having a laminate structure shown in FIG. 41 was produced as follows. [0294]
  • In accordance with the manner which is substantially the same as that described in Reference Example 1, a light-emissive unit [0295] 3-1 was deposited through a metal mask 40 for organic layer formation (see, FIG. 10B) on an ITO pattern-coated glass substrate 1 shown in FIG. 10A. Namely, a 600 Å-thick α-NPD and a 700 Å-thick layer including Alq:C545T=100:1 (weight ratio) were sequentially deposited. Thereafter the in-situ reaction generating layer was formed thereon.
  • Namely, a metal-organic complex of 8-quinolinolato lithium (hereinafter, briefly referred to as “Liq”) represented by the following formula [0296]
    Figure US20030189401A1-20031009-C00011
  • was deposited by 10 Å. Thereafter Al was deposited a as a thermally reducible metal at a deposition rate of about 1 Å/sec to form an in-situ reaction generating layer having a thickness of 15 Å. [0297]
  • Subsequently, V[0298] 2O5 (vanadium pentaoxide) and α-NPD was co-deposited at a molar ratio (V2O5:α-NPD=4:1) on the in-situ reaction generating layer at a deposition rate of 2 Å/sec to form the charge generation layer 4-1 having a thickness of 200 Å. The charge generation layer was also deposited via the metal mask 40 for organic layer formation (see, FIG. 10B).
  • Thereafter, while the metal mask [0299] 40 for organic layer formation (FIG. 10B) is still on the glass substrate 1, the above-described step was again repeated to form a light-emissive unit 3-2. Namely, a 600 Å-thick α-NPD, a 700 Å-thick layer including Alq:C545T 100:1 (weight ratio), and a 10 Å-thick Liq were sequentially deposited. Finally, aluminum (Al) was deposited through a metal mask 41 for cathode layer formation (see, FIG. 10C) at a deposition rate of 10 Å/sec to form a cathode electrode 5 having a thickness of about 1,000 Å. The organic EL device having a square light-emissive area of 0.2 cm (length) by 0.2 cm (width) was thus obtained (see, FIG. 10D).
  • In this organic EL device, a DC voltage was applied between the anode electrode (ITO) and the cathode electrode (Al), and the characteristics of the green light emitted from the light-emissive layer (co-deposited layer of Alq and C545T) were measured to obtain the results in FIGS. 42, 43, [0300] 44 and 45. In FIGS. 42, 43, 44 and 45, the circle symbols () represent a graph of luminance (cd/m2)-voltage (v) characteristic curve, a graph of current density (mA/cm2)-voltage (v) characteristic curve, a graph of current efficiency (cd/A)-current density (mA/cm2) characteristic curve and a graph of luminous efficiency (lm/W)-luminance (cd/m2) characteristic curve, respectively, of the EL device of Example 6.
  • For comparison, a result of a reference device (ITO/α-NPD, 600 Å/Alq:C545T=100:1, 700 Å/Liq, 10 Å/Al) having a conventional structure was plotted in FIGS. 42, 43, [0301] 44 and 45, using the circle symbols (∘)
  • As shown in the drawings, in the organic EL device in which the light-emissive unit was partitioned into 2 units, a maximum current efficiency (and quantum efficiency) is improved to twice as the organic EL device in the above reference device. [0302]
  • In the EL device of Example 6, it is considered, like in Example 1, that a charge transfer complex (V[0303] 2O5 +α-NPD+) was formed between molecules of the V2O5 and the α-NPD, a hole transporting arylamine molecule, by an oxidation reduction reaction. A mixed layer of the V2O5 and the α-NPD is functioned as the charge generation layer.
  • Furthermore, in this EL device, a material constituting the in-situ reaction generating layer includes only the organic metal complex having an alkaline metal ion (Lithium ion in the EXAMPLE 6). The material can be, however, a mixed layer of the electron transporting compound such as bathocuproine and Alq and the organic metal complex (see Japanese Laid-open Patent Application No.2000-182774) or a layer including the organic metal complex containing one of said metal ion. [0304]
  • The in-situ reaction using inorganic compound containing one of said metal ion can also be adopted for the layer contacting the charge generation layer on an anode side, because such in-situ reaction has been observed conventionally also in using an inorganic alkaline metal compound as a contacting material to Al cathode and so on (see a reference document “J. Endo, T. Matsumoto, and J. Kido, Jpn. J. Appl. Phys. Vol. 41 (2002) pp.L800-L803”). [0305]
  • Test Example
  • (Measurement of Resistivity in the Charge Generation Layer and the Like) [0306]
  • In this example, the resistivity (Ωcm) was measured with two different methods depending on the range of the resistivity of the test sample. [0307]
  • The first measuring method can be suitably applied to a test samples having a relatively large resistivity. The measurement is carried out by sandwiching a vapor deposition layer of the test sample with electrodes (see FIGS. 33 and 34). The resistivity of the test sample is then calculated from a ratio of the electric field E(V/cm), obtained from an applied voltage (V) and a layer thickness (cm) of the deposition layer of the sample, i.e., distance between the electrodes, and a current density (A/cm[0308] 2) obtained from an observed current value (A) and a cross-sectional area (cm2) of the current flowing region, i.e., resistivity (Ωcm)=(V/cm)/(A/cm2)
  • The resistivity evaluation device for use in this measuring method can be produced in accordance with the following method. FIG. 33 is a plan view of the evaluation device, and FIG. 34 is a cross-sectional view thereof. [0309]
  • As in the Examples and the Reference Examples described above, a metal mask [0310] 40 shown in FIG. 10B is used. A test sample (material, a resistivity of which is intended to be measured) 18 is deposited, through a shadow mask for forming both an organic layer and a charge generation layer, at a desired thickness on an ITO electrode 16 having a width of about 2 mm or, alternatively, an aluminum electrode having a width of about 2 mm. Finally, an aluminum electrode 17 having a width of about 2 mm is deposited in such a manner that it is crossed with the ITO electrode 16. A desired evaluation device is thus obtained.
  • The second measuring method can be suitably applied to the test samples having a relatively small resistivity. The measurement is carried out by using a resistivity evaluation device having a coplanar arrangement structure. Namely, as shown in FIGS. 35 and 36, a substrate [0311] 19 is provided, and on the same plane surface of the substrate 19, electrodes which are used as an anode 20 and a cathode 21 are previously deposited at a certain distance of L cm. A test material 22 is deposited through a metal mask for defining a deposition area having an opening with the certain width (W cm) on the electrodes-deposited substrate 19 to obtain a deposited layer having a desired thickness (t cm). In this measuring method, an electric field E(V/cm) of the test sample is calculated by dividing an applied voltage (V) with a distance (L cm) between the electrodes, and a current density (A/cm2) is calculated by dividing an observed current value (A) by a cross-sectional area of the current flowing region (in this example, W×t cm2). The resistivity (Ωcm) of the test sample can be calculated from the equation described above with regard to the first measuring method (sandwich method).
  • FIG. 37 is a graph showing the measurement results of the resistivity. The test samples used herein are ITO (transparent electrode material), V[0312] 2O5 (a charge generation layer according to the present invention), a co-deposition layer of V2O5 and α-NPD (three kinds of molar ratios of V2O5:α-NPD=4:1, 1:1, 1:2) (a charge generation layer according to the present invention), a co-deposition layer of V2O5 and 2-TNATA [V2O5:2-TNATA=4:1 (molar ratio) (a charge generation layer according to the present invention)], a co-deposition layer of α-NPD, Cs and bathocuproine [Cs bathocuproine 1:1 (molar ratio) (electron injecting layer in the light-emissive unit)], and Alq (light emitting material).
  • For the ITO, the co-deposition layer of V[0313] 2O5 and α-NPD, and the co-deposition layer of V2O5 and 2-TNATA, the resistivity was measured using a measuring device having a coplanar arrangement structure (coplanar arrangement method), and for the α-NPD, the co-deposition layer of Cs and bathocuproine, and Alq3, the resistivity was measured using a measuring device having a sandwich structure (sandwich method). Furthermore, the α-NPD having a thickness of 1000 Å was measured by a measuring device having the sandwich structure wherein the mixed layer of V2O5 and α-NPD (the composition of the charge generation layer according to the present invention) was formed thinly by 50 Å on a portion contacting both electrodes to make the charge injection from the electrode ohmic.
  • Furthermore, with regard to V[0314] 2O5, the resistivity thereof was measured by using both of the coplanar arrangement method and the sandwich method with the result that a substantially same resistivity can be measured regardless of the difference of the applied methods.
  • Coplanar Arrangement Method: [0315]
    ITO 4.6 × 10−4 Ω cm
    V2O5 7.2 × 10$ Ω cm
    co-deposition layer of V2O5 and α -NPD (V2O5:
    α − NPD = 4:1) 2.0 × 103 Ω cm
    co-deposition layer of V2O5 and α -NPD (V2O5:
    α − NPD = 1:1) 3.6 × 104 Ω cm
    + co-deposition layer of V2O5 and α -NPD (V2O5:
    α − NPD = 1:2) 2.9 × 105 Ω cm
    co-deposition layer of V2O5 and 2-TNATA (V2O5:
    2-TNATA = 4:1) 5.8 × 103 Ω cm
  • Sandwich Method: [0316]
    Δ ITO/V2O5/Al 2.8 × 105 Ω cm
    ITO/ α -NPD/Al 1.5 × 1013 Ω cm
    ITO/V2O5: α -NPD(50Å)/ α -NPD(1000Å)/V2O5:
    α -NPD (50Å) /Al 8.0 × 108 Ω cm
    X Al/ Alq3/Al 6 × 1013 Ω cm
    | ITO/Cs: bathocuproine/Al 2 × 105 Ω cm
  • FIG. 40 shows a relationship between a mixed ratio (molar fraction) of the co-deposition layer of V[0317] 2O5 and α-NPD, and resistivity. As shown in FIG. 40, due to the mixing of both materials, the charge generation layer according to the present invention indicates a resistivity lower than that of each material. This result suggests a presence of oxidation reduction reaction caused by the transfer of electrons, i.e. formation of the charge transfer complex. Accordingly, it was found that the resistivity of the charge generation layer can be varied depending the way of contacting the electron accepting material such as V2O5 with the hole transporting material, using an appropriate method such as laminating or mixing.
  • As described above, since the EL device of the present invention has a structure wherein two or more light-emissive units were arranged between the electrodes while the light-emissive units are partitioned with an electrically insulating charge generation layer, an EL device having a long operational lifetime and a high luminance region can be achieved without increasing a current density so much. Furthermore, it is not necessary to frequently change and to precisely position shadow masks for defining a vapor deposition area during production, especially during the formation of two or more light-emissive units and a charge generation layer. Furthermore, in the production of simple matrix-type display devices, it is not required to perform an operation which may cause a risk of disconnection in formation of a cathode line, thus enabling to retain high productivity, and effectively and stably produce an organic EL device with a high luminance and long operational lifetime. [0318]
  • Moreover, when the EL device was applied to the production of an illumination apparatus, since a voltage reduction due to the resistance of the electrode material can be diminished, it becomes possible to achieve an uniform light emission over a large surface area. Similarly, if the EL device was applied to the production of a display device having a simple matrix structure, since a voltage reduction due to the wiring resistance and an increase of the substrate temperature can be largely diminished, it becomes possible to achieve a large surface area simple matrix display device which could not be obtained using the conventional EL devices. [0319]
  • Obvious changes may be made in the specific embodiments of the present invention described herein, such modifications being within the spirit and scope of the invention claimed. It is indicated that all matter contained herein is illustrative and does not limit the scope of the present invention. [0320]

Claims (36)

    What is claimed is:
  1. 1. An organic electroluminescent device comprising:
    at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to said cathode electrode, each of said light-emissive units including at least one light-emissive layer;
    wherein said light-emissive units are partitioned from each other by at least one charge generation layer, said charge generation layer constituting an electrically insulating layer having a resistivity of not less than 1.0×102 Ωcm.
  2. 2. The organic electroluminescent device according to claim 1, wherein the charge generation layer constitutes an electrically insulating layer having a resistivity of not less than 1.0×105 Ωcm.
  3. 3. The organic electroluminescent device according to claim 1 or 2, wherein said charge generation layer comprises at least one of a laminated and mixed layer formed from two different materials;
    wherein a charge transfer complex including a radical cation and a radical anion is formed upon an oxidation-reduction reaction between said two materials, and a radical cation state and a radical anion state in said charge transfer complex is transferred to a direction of the cathode and a direction of the anode, respectively, when a voltage is applied to said device, so that a hole is injected into the light-emissive unit which is located on a cathode side of the charge generation layer and is adjacent thereto, and an electron is injected into the light-emissive unit which is located on an anode side of the charge generation layer and is adjacent thereto.
  4. 4. The organic electroluminescent device according to claim 1, wherein said charge generation layer comprises one of a laminated and a mixed layer comprising:
    an organic compound having an ionization potential of less than 5.7 eV and a hole transporting property or electron donating property; and
    one of an inorganic and organic material capable of forming a charge transfer complex through the oxidation-reduction reaction thereof with said organic compound; wherein
    said charge generation layer contains a charge transfer complex formed upon the oxidation-reduction reaction between said organic compound and one of an inorganic and organic material.
  5. 5. The organic electroluminescent device according to claim 4, wherein said organic compound comprises an arylamine compound, wherein said arylamine compound is represented by the following formula (I):
    Figure US20030189401A1-20031009-C00012
    wherein Ar1, Ar2 and Ar3 each independently represents an aromatic hydrocarbon group which may have substituents.
  6. 6. The organic electroluminescent device according to claim 5, wherein said organic compound comprises an arylamine compound having a glass transition temperature of not lower than 90° C.
  7. 7. The organic electroluminescent device according to claim 6, wherein said arylamine comprises one of α-NPD, 2-TNATA, spiro-TAD, and spiro-NPB.
  8. 8. The organic electroluminescent device according to claim 4, wherein said inorganic material comprises a metal oxide.
  9. 9. The organic electroluminescent device according to claim 4, wherein said inorganic material comprises a metal halide.
  10. 10. The organic electroluminescent device according to claim 8, wherein said metal oxide comprises one of vanadium pentaoxide and rhenium heptaoxide.
  11. 11. The organic electroluminescent device according to claim 4, wherein said inorganic material is deposited by one of a resistive heating vapor deposition method, an electron beam vapor deposition method and a laser beam vapor deposition method.
  12. 12. The organic electroluminescent device according to claim 4, wherein said inorganic material is deposited by a sputtering method;
    wherein a sputtering apparatus used in the sputtering method is a facing target sputtering system which comprises a pair of opposed targets provided at a certain distance, a reflection electrode capable of reflecting electrons towards a front peripheral area of each target, and a magnetic field generation device capable of forming a parallel magnetic field in the vicinity of the peripheral portion of each target, said magnetic field having a portion parallel to the peripheral portion of the target.
  13. 13. The organic electroluminescent device according to claim 4, wherein said organic material-comprises at least one fluorine as a substituent group, and possesses at least one of an electron injection property and an electron accepting property.
  14. 14. The organic electroluminescent device according to claim 4, wherein said organic material comprises at least one cyano group as a substituent group, and possesses at least one of an electron injection property and an electron accepting property.
  15. 15. The organic electroluminescent device according to claim 13, wherein said organic material comprises tetrafluoro-tetracyanoquinodimethane (4F-TCNQ).
  16. 16. The organic electroluminescent device according to claim 1 or 2, wherein said light-emissive unit comprises, as a layer located on an anode side of said charge generation layer and being adjacent thereto, an electron injection layer having a mixture including an organic compound and a metal functioning as an electron donating dopant.
  17. 17. The organic electroluminescent device according to claim 16, wherein said electron donating dopant comprises at least one metal selected from a group including an alkaline metal, an alkaline earth metal and a rare earth metal.
  18. 18. The organic electroluminescent device according to claim 17, wherein said metal of the electron donating dopant is provided in a molar ratio of 0.1 to 10 with respect to said organic compound in said electron injection layer.
  19. 19. The organic electroluminescent device according to claim 1 or 2, wherein said light-emissive unit comprises, as a layer located on an anode side of said charge generation layer and being adjacent thereto, a metal layer having a thickness of not more than 5 nm formed from a metal selected from an alkaline metal, an alkaline earth metal and a rare earth metal;
    wherein said metal constituting the layer diffuses in the adjacent electron transporting layer to react with electron transporting organic material; and
    wherein, as a result of said diffusion, an electron injection layer is composed of a mixture including said electron transporting organic material and a metal functioning as an electron donating dopant is formed.
  20. 20. The organic electroluminescent device according to claim 1 or 2, wherein said light-emissive unit comprises, as a layer located on an anode side of said charge generation layer and being adjacent thereto, a layer including an organic metal complex compound including at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion, and a reaction generating layer which is formed by an in-situ reduction reaction when a thermally reducible metal, which can reduce a metal ion in said organic metal complex to a metal in a vacuum is deposited on the organic metal complex constituting the layer.
  21. 21. The organic electroluminescent device according to claim 1 or 2, wherein said light-emissive unit comprises, as a layer located on an anode side of said charge generation layer and being adjacent thereto, a layer including an inorganic compound including at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion, and a reaction generating layer which is formed by an in-situ reduction reaction when a thermally reducible metal, which can reduce a metal ion in the inorganic compound to a metal in a vacuum is deposited on the inorganic compound constituting the layer.
  22. 22. The organic electroluminescent device according to claim 20 or 21, wherein the thermally reducible metal includes at least one selected from Aluminum, Zirconium, Silicon, Titanium and Tungsten.
  23. 23. The organic electroluminescent device according to claim 1, wherein said light-emissive unit comprises a structure, as a layer located on an anode side of said charge generation layer and being adjacent thereto, in which a layer of a mixture including an organic compound and an electron donating dopant is formed, thereafter, a reaction generating layer is generated by an in-situ reduction reaction when a thermally reducible metal, which can reduce an alkaline metal ion, an alkaline earth metal ion or a rare earth metal ion to a metal in a vacuum, is deposited on an organic metal complex compound containing at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion.
  24. 24. The organic electroluminescent device according to claim 1, wherein said light-emissive unit comprises a structure, as a layer located on an anode side of said charge generation layer and being adjacent thereto, in which a layer of a mixture including an organic compound and an electron donating dopant is formed, thereafter, a reaction generating layer is generated by an in-situ reduction reaction when a thermally reducible metal, which can reduce an alkaline metal ion, an alkaline earth metal ion or a rare earth metal ion to a metal in a vacuum, is deposited on an inorganic compound containing at least one metal ion selected from an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion.
  25. 25. The organic electroluminescent device according to claim 1 or 2, in which said light-emissive unit comprises, as a layer located on a cathode side of said charge generation layer and being adjacent thereto, a hole injection layer comprising a mixture of an organic compound and an electron accepting compound having a property capable of oxidizing said organic compound in terms of Lewis acid chemistry.
  26. 26. The organic electroluminescent device according to claim 25, wherein the electron accepting compound having a property capable of oxidizing the organic compound in said hole injection layer in terms of Lewis acid chemistry is provided in a molar ratio of 0.01 to 10 with respect to the organic compound.
  27. 27. The organic electroluminescent device according to claim 1 or 2, wherein said light-emissive unit comprises, as a layer located on a cathode side of said charge generation layer and being adjacent thereto, a hole injection layer including an electron accepting compound and having a thickness of not more than 30 nm.
  28. 28. The organic electroluminescent device according to claim 1 or 2, wherein said light-emissive units each have different emission spectrums.
  29. 29. The organic electroluminescent device according to claim 1 or 2, wherein said organic electroluminescent device emits white light due to superimposing of different lights from each light-emissive unit.
  30. 30. The organic electroluminescent device according to claim 1 or 2, wherein at least one of said light-emissive units includes a light-emissive layer containing a phosphorescent material.
  31. 31. The organic electroluminescent device according to claim 1 or 2, wherein, in each of said light-emissive units, an optical path length from a light-emissive site to a light-reflective metal electrode is an odd-numbered times a quarter wavelength of light.
  32. 32. The organic electroluminescent device according to claim 1 or 2, wherein all the layers including said light-emissive units, said charge generation layer, and an electrode layer are formed on a substrate by heating a vaporizable material in a vacuum to deposit one of a vaporized and sublimed material on the substrate;
    wherein upon depositing said one of vaporized and sublimed material on the substrate, a substrate is transported in a direction of a planar surface thereof, a deposition area being open in a lower surface of the substrate; a container is provided, in a lower position of the transporting substrate, including a vaporizable material having a deposition width which can cover the deposition area extending in a direction perpendicular to the transportation direction of the substrate; and said container is heated to thereby one of vaporize and sublime so as to deposit the vaporizable material provided in the container.
  33. 33. The organic electroluminescent device according to claim 1 or 2, wherein a combined thickness of said light-emissive units and said charge generation layers, sandwiched between the cathode and the anode, is greater than 1,000 nm (1 μm).
  34. 34. The organic electroluminescent device according to claim 1 or 2, wherein said organic electroluminescent device is operated at a driving voltage of more than 25 volts.
  35. 35. The organic electroluminescent device according to claim 1 or 2, wherein light can be passed in only one direction which is one of an anode electrode direction and a cathode electrode direction, from a light generation site in the organic electroluminescent device, wherein light advancing in a direction opposite to said only one direction is absorbed by a light-absorbing medium, and wherein, in each of said light-emissive units, a light interference effect is removed so that an adjustment of an optical path length from a light-emissive site of said light-emissive layers to a light-reflective metal electrode is substantially not necessary.
  36. 36. The organic electroluminescent device according to claim 1 or 2, wherein a light advancing in one direction which is one of an anode electrode direction and a cathode electrode direction, from a light generation site in the organic electroluminescent device is reflected diffusely by a diffused reflection medium, and wherein, in each of said light-emissive units, a light interference effect is removed, so that an adjustment of an optical path length from a light-emissive site of said light-emissive layers to a light-reflective metal electrode is substantially not necessary.
US10393952 2002-03-26 2003-03-21 Organic electroluminescent device Abandoned US20030189401A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002-86599 2002-03-26
JP2002086599 2002-03-26
JP2003070135A JP3933591B2 (en) 2002-03-26 2003-03-14 The organic electroluminescent element
JP2003-70135 2003-03-14

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11732348 US8080934B2 (en) 2002-03-26 2007-04-03 Organic electroluminescent device having an electrically insulating charge generation layer
US13892868 US9070892B2 (en) 2002-03-26 2013-05-13 Organic electroluminescent device
US14716114 US20150249230A1 (en) 2002-03-26 2015-05-19 Organic electroluminescent device
US15993526 US20180277797A1 (en) 2002-03-26 2018-05-30 Organic electroluminescent device
US15993516 US20180277796A1 (en) 2002-03-26 2018-05-30 Organic electroluminescent device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11732348 Division US8080934B2 (en) 2002-03-26 2007-04-03 Organic electroluminescent device having an electrically insulating charge generation layer

Publications (1)

Publication Number Publication Date
US20030189401A1 true true US20030189401A1 (en) 2003-10-09

Family

ID=28043836

Family Applications (7)

Application Number Title Priority Date Filing Date
US10393952 Abandoned US20030189401A1 (en) 2002-03-26 2003-03-21 Organic electroluminescent device
US11732348 Active 2025-10-03 US8080934B2 (en) 2002-03-26 2007-04-03 Organic electroluminescent device having an electrically insulating charge generation layer
US13297359 Active US8482193B2 (en) 2002-03-26 2012-01-30 Organic electroluminescent device having an electrically insulating charge generation layer including an electron accepting material and an electron donating material
US13892868 Active US9070892B2 (en) 2002-03-26 2013-05-13 Organic electroluminescent device
US14716114 Abandoned US20150249230A1 (en) 2002-03-26 2015-05-19 Organic electroluminescent device
US15993526 Pending US20180277797A1 (en) 2002-03-26 2018-05-30 Organic electroluminescent device
US15993516 Pending US20180277796A1 (en) 2002-03-26 2018-05-30 Organic electroluminescent device

Family Applications After (6)

Application Number Title Priority Date Filing Date
US11732348 Active 2025-10-03 US8080934B2 (en) 2002-03-26 2007-04-03 Organic electroluminescent device having an electrically insulating charge generation layer
US13297359 Active US8482193B2 (en) 2002-03-26 2012-01-30 Organic electroluminescent device having an electrically insulating charge generation layer including an electron accepting material and an electron donating material
US13892868 Active US9070892B2 (en) 2002-03-26 2013-05-13 Organic electroluminescent device
US14716114 Abandoned US20150249230A1 (en) 2002-03-26 2015-05-19 Organic electroluminescent device
US15993526 Pending US20180277797A1 (en) 2002-03-26 2018-05-30 Organic electroluminescent device
US15993516 Pending US20180277796A1 (en) 2002-03-26 2018-05-30 Organic electroluminescent device

Country Status (7)

Country Link
US (7) US20030189401A1 (en)
EP (1) EP1351558B1 (en)
JP (1) JP3933591B2 (en)
KR (1) KR100835725B1 (en)
CN (1) CN100487942C (en)
DE (2) DE60306570T2 (en)
ES (1) ES2268192T3 (en)

Cited By (1915)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030218166A1 (en) * 2002-05-21 2003-11-27 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
US20040027061A1 (en) * 2002-08-09 2004-02-12 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence element and a light emitting device using the same
US20040150333A1 (en) * 2002-08-09 2004-08-05 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent device
US20040245525A1 (en) * 2003-03-24 2004-12-09 Shunpei Yamazaki Thin film integrated circuit device
US20050072977A1 (en) * 2003-10-03 2005-04-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
US20050084713A1 (en) * 2003-10-17 2005-04-21 Junji Kido Organic electroluminescent device and production process thereof
US20050084712A1 (en) * 2003-10-17 2005-04-21 Junji Kido Organic electroluminescent device
US20050098207A1 (en) * 2003-11-10 2005-05-12 Junji Kido Organic devices, organic electroluminescent devices, organic solar cells, organic FET structures and production method of organic devices
US20050106419A1 (en) * 2003-11-13 2005-05-19 International Manufacturing And Engineering Services Co., Ltd. Organic electroluminescent devices
US20050123751A1 (en) * 2003-08-25 2005-06-09 Tetsuo Tsutsui Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device
US20050134173A1 (en) * 2003-08-25 2005-06-23 Tetsuo Tsutsui Electrode device for organic device and electronic device having the same
US20050140275A1 (en) * 2003-12-29 2005-06-30 L.G.Philips Lcd Co. Ltd. Organic electroluminescence device
US20050196526A1 (en) * 2004-03-03 2005-09-08 Seiko Epson Corporation Method of producing laminated type organic electroluminescent element and display apparatus
US20050206305A1 (en) * 2004-03-18 2005-09-22 Hitachi Displays, Ltd. Organic light-emitting display
US20050221121A1 (en) * 2004-03-31 2005-10-06 Hitachi Displays, Ltd. Organic light-emitting element, image display device and production method thereof
US20050248267A1 (en) * 2002-09-20 2005-11-10 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
US20050255334A1 (en) * 2004-05-11 2005-11-17 Minsoo Kang Organic electronic device
US20060008740A1 (en) * 2004-07-08 2006-01-12 Junji Kido Organic devices, organic electroluminescent devices and organic solar cells
US20060014044A1 (en) * 2004-07-14 2006-01-19 Au Optronics Corporation Organic light-emitting display with multiple light-emitting modules
US20060027830A1 (en) * 2004-08-04 2006-02-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, and electronic appliance
US20060040132A1 (en) * 2004-08-20 2006-02-23 Eastman Kodak Company White OLED having multiple white electroluminescence units
US20060076885A1 (en) * 2004-10-11 2006-04-13 Samsung Sdi Co., Ltd. Organic EL device and method of manufacturing the same
US20060081840A1 (en) * 2004-10-20 2006-04-20 Toshitaka Mori Organic electronic device and method for producing the same
US20060087225A1 (en) * 2004-10-22 2006-04-27 Eastman Kodak Company White OLEDs with a color-compensated electroluminescent unit
US20060113899A1 (en) * 2004-12-01 2006-06-01 Sony Corporation Display device and method for manufacturing the same
US20060118166A1 (en) * 2004-12-06 2006-06-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element, solar battery, and photo sensor
US20060119262A1 (en) * 2004-12-06 2006-06-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US7075231B1 (en) 2005-01-03 2006-07-11 Eastman Kodak Company Tandem OLEDs having low drive voltage
US20060154554A1 (en) * 2004-12-01 2006-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and electronic equipment
US20060180812A1 (en) * 2005-02-15 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device
US20060188745A1 (en) * 2005-02-23 2006-08-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector
US20060214152A1 (en) * 2005-03-22 2006-09-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
WO2006101018A1 (en) 2005-03-23 2006-09-28 Semiconductor Energy Laboratory Co., Ltd. Composite material, material for light-emitting element, light-emitting element, light-emitting device and electronic device
US20060220538A1 (en) * 2003-04-24 2006-10-05 Idemitsu Kosan Co., Ltd. Organic electroluminescent device and display
US20060228822A1 (en) * 2005-04-11 2006-10-12 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US20060232202A1 (en) * 2005-04-15 2006-10-19 Eisuke Matsuda Display device and a method of manufacturing the display device
US20060232203A1 (en) * 2005-03-25 2006-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7126267B2 (en) 2004-05-28 2006-10-24 Eastman Kodak Company Tandem OLED having stable intermediate connectors
US20060240278A1 (en) * 2005-04-20 2006-10-26 Eastman Kodak Company OLED device with improved performance
US20060251920A1 (en) * 2005-05-04 2006-11-09 Xerox Corporation Organic light emitting devices comprising a doped triazine electron transport layer
US20060263628A1 (en) * 2005-05-20 2006-11-23 Xerox Corporation Display device with metal-organic mixed layer anodes
US20060263638A1 (en) * 2005-05-20 2006-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US20060263593A1 (en) * 2005-05-20 2006-11-23 Xerox Corporation Display devices with light absorbing metal nonoparticle layers
US20060261731A1 (en) * 2005-05-20 2006-11-23 Xerox Corporation Stacked oled structure
US20060263629A1 (en) * 2005-05-20 2006-11-23 Xerox Corporation Intermediate electrodes for stacked OLEDs
US20060261727A1 (en) * 2005-05-20 2006-11-23 Xerox Corporation Reduced reflectance display devices containing a thin-layer metal-organic mixed layer (MOML)
EP1734792A1 (en) * 2004-03-26 2006-12-20 Matsushita Electric Works, Ltd. Organic light emitting element
US20060284189A1 (en) * 2005-06-08 2006-12-21 Junichiro Sakata Light-emitting element, light-emitting device, and electronic device
US20060284552A1 (en) * 2005-06-16 2006-12-21 Chung-Chun Lee Method for improving color-shift of serially connected organic electroluminescence device
US20060284204A1 (en) * 2005-06-09 2006-12-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US20060292394A1 (en) * 2005-06-22 2006-12-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
US20060289882A1 (en) * 2004-07-30 2006-12-28 Kazuki Nishimura Organic electroluminescent element and organic electroluminescent display device
US20070000487A1 (en) * 2005-07-04 2007-01-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light emitting device
US20070008257A1 (en) * 2004-12-16 2007-01-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device using the same
US20070007516A1 (en) * 2005-07-08 2007-01-11 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
US20070007882A1 (en) * 2003-07-02 2007-01-11 Idemitsu Kosan Co., Ltd. Organic electroluminescent device and display using same
US20070013301A1 (en) * 2005-06-30 2007-01-18 Shunpei Yamazaki Light emitting element, light emitting device, and electronic apparatus
US20070029929A1 (en) * 2005-08-08 2007-02-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US20070035243A1 (en) * 2005-08-12 2007-02-15 Lee Jun Y White electroluminescent device and method of producing the same
US20070037011A1 (en) * 2005-08-12 2007-02-15 Semiconductor Energy Laboratory Co. Arylamine compound and synthetic method thereof
US20070037983A1 (en) * 2005-08-11 2007-02-15 Semiconductor Energy Laboratory Co., Ltd. Phenanthroline derivative compound
US20070040161A1 (en) * 2004-09-30 2007-02-22 Daisuke Kumaki Light-emitting element and light-emitting device
US7199521B2 (en) 2003-01-29 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence device
US20070085070A1 (en) * 2005-10-17 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Lighting system
US20070090376A1 (en) * 2004-08-03 2007-04-26 Daisuke Kumaki Light-emitting element and light-emitting device
US20070098891A1 (en) * 2005-10-31 2007-05-03 Eastman Kodak Company Vapor deposition apparatus and method
US20070096644A1 (en) * 2005-10-28 2007-05-03 Sanyo Electric Co., Ltd. Organic electroluminescent element and organic electroluminescent display device
US20070108895A1 (en) * 2003-06-30 2007-05-17 Kyushu Electric Power Co., Inc. Electroluminescent device
US20070114512A1 (en) * 2004-07-23 2007-05-24 Semiconductor Energy Laboratory Co. Ltd. Light emitting element and light emitting device using the same
US20070114544A1 (en) * 2004-09-24 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20070114527A1 (en) * 2003-12-26 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
US20070132373A1 (en) * 2005-12-08 2007-06-14 Fujifilm Corporation Organic electroluminescence device
US20070141396A1 (en) * 2005-12-20 2007-06-21 Min-Seung Chun Organic luminescence display device and method of manufacturing the same
US20070141395A1 (en) * 2005-12-20 2007-06-21 Min-Seung Chun Organic electroluminescent display device and method of preparing the same
EP1804308A1 (en) 2005-12-23 2007-07-04 Novaled AG An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other
EP1804309A1 (en) 2005-12-23 2007-07-04 Novaled AG Electronic device with a layer structure of organic layers
US20070152572A1 (en) * 2004-11-26 2007-07-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US20070159088A1 (en) * 2006-01-11 2007-07-12 Rohm Co., Ltd. Organic el component
US20070170847A1 (en) * 2004-11-05 2007-07-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light emitting device using the same
US20070172699A1 (en) * 2004-11-30 2007-07-26 Semiconductor Engergy Light emitting element, light emitting device, and electronic device
US20070176161A1 (en) * 2005-01-21 2007-08-02 Satoshi Seo Light emitting device
US20070182318A1 (en) * 2004-05-21 2007-08-09 Daisuke Kumaki Light emitting element and light emitting device
US20070200125A1 (en) * 2003-09-26 2007-08-30 Hisao Ikeda Light-Emitting Device And Method For Manufacturing The Same
US20070200112A1 (en) * 2006-02-24 2007-08-30 Shunpei Yamazaki Light-emitting device
US20070205411A1 (en) * 2006-03-06 2007-09-06 Fujifilm Corporation Organic electroluminescence device
US20070222376A1 (en) * 2006-03-21 2007-09-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US20070221912A1 (en) * 2004-04-09 2007-09-27 Jeong Ji W Stacked Organic Light Emitting Device Having High Efficiency and High Brightness
WO2007109690A2 (en) * 2006-03-21 2007-09-27 Ultradots, Inc. Authenticating and identifying objects by detecting markings through turbid materials
US20070228938A1 (en) * 2006-03-30 2007-10-04 Eastman Kodak Company Efficient white-light OLED display with filters
US20070248753A1 (en) * 2006-04-20 2007-10-25 Eastman Kodak Company Vapor deposition of a layer
US20070262693A1 (en) * 2004-10-29 2007-11-15 Satoshi Seo Composite Material, Light-Emitting Element, Light-Emitting Device and Manufacturing Method Thereof
WO2007132965A1 (en) * 2006-05-12 2007-11-22 Cheong-A Baek High brightness electro luminescence device and method for manufacturing thereof
EP1866983A1 (en) * 2005-02-28 2007-12-19 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element, light emitting device and electronic appliance using the composite material
US20080001512A1 (en) * 2004-09-13 2008-01-03 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device
US20080008905A1 (en) * 2006-07-04 2008-01-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US20080014463A1 (en) * 2006-03-21 2008-01-17 John Varadarajan Luminescent materials that emit light in the visible range or the near infrared range
US20080038584A1 (en) * 2006-08-11 2008-02-14 Tomonori Akai Organic electroluminescence element
US20080036369A1 (en) * 2004-08-23 2008-02-14 Semiconductor Energy Laborstory Co., Ltd. Light Emitting Element, Light Emitting Device, and Lighting System
US20080035916A1 (en) * 2004-12-28 2008-02-14 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Element
US20080093981A1 (en) * 2004-08-23 2008-04-24 Semiconductor Energy Laboratory Co., Ltd. Electron Injecting Composition, and Light Emitting Element and Light Emitting Device Using the Electron Injecting Composition
US20080122345A1 (en) * 2004-12-06 2008-05-29 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element and Light-Emitting Device Using the Same
US20080130278A1 (en) * 2006-11-30 2008-06-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device employing the same
US20080135858A1 (en) * 2004-05-21 2008-06-12 Smiconductor Energy Laboratory Co., Ltd. Light Emitting Element and Light Emitting Device Using the Element
US20080135835A1 (en) * 2004-10-22 2008-06-12 Satoshi Seo Composite Material and Light Emitting Element
US20080154005A1 (en) * 2005-01-31 2008-06-26 Semiconductor Energy Laboratory Co., Ltd. Hole-Injecting Material, Material for Light-Emitting Element, Light-Emitting Element, Organic Compound, Monomer, and Monomer Mixture
US20080150422A1 (en) * 2006-12-21 2008-06-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
EP1944809A2 (en) 2007-01-12 2008-07-16 Samsung Electronics Co., Ltd White organic light emitting device
US20080185957A1 (en) * 2005-03-25 2008-08-07 Kaoru Kato Light Emitting Element, Light Emitting Device and Electric Appliance Using the Same
US20080191611A1 (en) * 2005-03-23 2008-08-14 Semiconductor Energy Laboratory Co., Ltd. Composite Material, Light Emitting Element and Light Emitting Device
US20080217648A1 (en) * 2007-03-07 2008-09-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
EP1970977A2 (en) 2007-03-13 2008-09-17 Samsung Electronics Co., Ltd. White organic light emitting device including color control layer
US20080241586A1 (en) * 2004-11-05 2008-10-02 Daisuke Kumaki Light Emitting Element and Light Emitting Device Using the Same
US20080246395A1 (en) * 2007-04-05 2008-10-09 Yamagata Promotional Organization For Industrial Technology Organic electroluminescent device
US20080246028A1 (en) * 2007-04-03 2008-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and method for manufacturing memory device
US20080261075A1 (en) * 2006-12-04 2008-10-23 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Element, Light Emitting Device, and Electronic Device
US20080258610A1 (en) * 2005-02-08 2008-10-23 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, and Electronic Appliance
US20080268282A1 (en) * 2007-04-30 2008-10-30 Spindler Jeffrey P White light tandem oled
US20080278066A1 (en) * 2007-05-09 2008-11-13 Spindler Jeffrey P High-performance tandem white oled
US20080278064A1 (en) * 2004-09-30 2008-11-13 Daisuke Kumaki Light Emitting Element
US20080308794A1 (en) * 2007-06-14 2008-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and manufacturing method of light-emitting device
US20090004506A1 (en) * 2006-12-28 2009-01-01 Semiconductor Energy Laboratory Co., Ltd. Anthracene Derivatives and Light-Emitting Devices Using the Anthracene Derivatives
US20090001885A1 (en) * 2007-06-27 2009-01-01 Spindler Jeffrey P Tandem oled device
US20090009071A1 (en) * 2005-12-21 2009-01-08 Sven Murano Organic Component
US20090026922A1 (en) * 2005-04-21 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US20090056791A1 (en) * 2007-06-22 2009-03-05 William Matthew Pfenninger Solar modules with enhanced efficiencies via use of spectral concentrators
US20090058267A1 (en) * 2004-11-30 2009-03-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device
US20090078317A1 (en) * 2007-09-07 2009-03-26 Gracel Display Inc. Organometalic compounds for electroluminescence and organic electroluminescent device using the same
US20090102368A1 (en) * 2007-10-19 2009-04-23 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, and Electronic Device
US7531959B2 (en) 2005-06-29 2009-05-12 Eastman Kodak Company White light tandem OLED display with filters
US7535165B2 (en) 2006-04-28 2009-05-19 Au Optronics Corp. Tandem organic electroluminescent device
US20090128024A1 (en) * 2006-04-20 2009-05-21 Kenichi Fukuoka Organic light-emitting device
US20090140634A1 (en) * 2004-11-30 2009-06-04 Ryoji Nomura Light emitting element and electronic device using the same
US20090153037A1 (en) * 2007-11-05 2009-06-18 Gracel Display Inc. Novel red electroluminescent compounds and organic electroluminescent device using the same
US20090165854A1 (en) * 2007-12-28 2009-07-02 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US20090174315A1 (en) * 2006-02-07 2009-07-09 Sumitomo Chemical Company Limited Organic electroluminescent element
US20090174316A1 (en) * 2007-11-02 2009-07-09 Gracel Display Inc. Novel red electroluminescent compounds and organi electroluminescent device using the same
US20090179555A1 (en) * 2007-11-20 2009-07-16 Gracel Display Inc. Novel red electroluminescent compounds and organic electroluminescent device using the same
US7564182B2 (en) 2005-06-29 2009-07-21 Eastman Kodak Company Broadband light tandem OLED display
US20090184631A1 (en) * 2007-11-27 2009-07-23 Gracel Display Inc. Novel red electroluminescent compounds and organic electroluminescent device using the same
US20090189532A1 (en) * 2008-01-24 2009-07-30 Preuss Donald R Electroluminescent device having improved brightness uniformity
US20090195146A1 (en) * 2008-01-31 2009-08-06 Hatwar Tukaram K Tandem oled device with intermediate connector
US20090206732A1 (en) * 2005-07-06 2009-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, and Electronic Device
US20090230844A1 (en) * 2005-03-15 2009-09-17 Novaled Ag Light-emitting component
US20090230847A1 (en) * 2005-07-25 2009-09-17 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, and Electronic Appliance
US20090252990A1 (en) * 2007-11-15 2009-10-08 Gracel Display Inc. Novel organic electroluminescent compounds and organic electroluminescent device using the same
US20090261714A1 (en) * 2008-01-29 2009-10-22 Gracel Display Inc. Novel organic electroluminescent compounds and organic electroluminescent device using the same
US20090283762A1 (en) * 2008-05-16 2009-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US20090295281A1 (en) * 2008-02-29 2009-12-03 Gracel Display Inc. Novel organic electroluminescent compounds and organic electroluminescent device using the same
US20090309093A1 (en) * 2005-03-23 2009-12-17 Semiconductor Energy Laboratory Co., Ltd. Composite material, and light emitting element and light emitting device using the composite material
US20100006882A1 (en) * 2004-05-21 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Lighting device
US20100025716A1 (en) * 2004-06-03 2010-02-04 Semiconductor Energy Laboratory Co., Ltd. Lighting system
US20100025677A1 (en) * 2008-07-31 2010-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100025675A1 (en) * 2008-07-31 2010-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100032665A1 (en) * 2008-08-08 2010-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100032668A1 (en) * 2008-08-08 2010-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100032666A1 (en) * 2008-08-08 2010-02-11 Shunpei Yamazaki Semiconductor device and manufacturing method thereof
US20100046137A1 (en) * 2008-03-13 2010-02-25 Murata Manufacturing Co., Ltd. Glass ceramic composition, glass ceramic sintered body, and multilayer ceramic electronic device
US20100052525A1 (en) * 2008-08-28 2010-03-04 Yamagata Promotional Organization For Industrial Technology Organic electroluminescence element and method of manufacturing the same
US20100055832A1 (en) * 2008-09-01 2010-03-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100051923A1 (en) * 2008-08-04 2010-03-04 Novaled Ag Organischer Feldeffekt Transistor
US20100065842A1 (en) * 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100065839A1 (en) * 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device
US20100065838A1 (en) * 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100065825A1 (en) * 2006-04-19 2010-03-18 Novaled Ag Light-Emitting Component
US20100066239A1 (en) * 2008-09-16 2010-03-18 Spindler Jeffrey P High-color-temperature tandem white oled
US20100072468A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device
US20100072469A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
US20100084654A1 (en) * 2008-10-08 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Display device
US20100084653A1 (en) * 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Display device
US20100090217A1 (en) * 2008-10-10 2010-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100099216A1 (en) * 2008-10-22 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100099217A1 (en) * 2005-01-28 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Electronic Device, and Method of Manufacturing Semiconductor Device
US20100096654A1 (en) * 2008-10-16 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
US20100102313A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100105164A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100102710A1 (en) * 2008-03-19 2010-04-29 Gracel Display Inc. Novel organic electroluminescent compounds and organic electroluminescent device using the same
US20100105163A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100105162A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100102312A1 (en) * 2008-10-24 2010-04-29 Shunpei Yamazaki Oxide semiconductor, thin film transistor, and display device
US20100102311A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US20100109518A1 (en) * 2006-07-04 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, and Electronic Device
US20100109003A1 (en) * 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100110623A1 (en) * 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
US20100109708A1 (en) * 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US20100117077A1 (en) * 2008-11-07 2010-05-13 Shunpei Yamazaki Semiconductor device and manufacturing method thereof
US20100117078A1 (en) * 2008-11-13 2010-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100117076A1 (en) * 2008-11-07 2010-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20100117073A1 (en) * 2008-11-07 2010-05-13 Shunpei Yamazaki Semiconductor device and method for manufacturing the same
US20100117075A1 (en) * 2008-11-07 2010-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100117086A1 (en) * 2008-11-07 2010-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20100123152A1 (en) * 2008-11-19 2010-05-20 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
US20100123130A1 (en) * 2008-11-20 2010-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2190265A1 (en) * 2007-08-28 2010-05-26 Panasonic Electric Works Co., Ltd Organic electroluminescence device
US20100134710A1 (en) * 2008-12-03 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US20100135073A1 (en) * 2007-04-17 2010-06-03 Novaled Ag Organic electronic memory component, memory component arrangement and method for operating an organic electronic memory component
US20100133573A1 (en) * 2008-12-01 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, lighting device, and electronic device
US20100133531A1 (en) * 2008-12-01 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100134397A1 (en) * 2008-11-28 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US20100134735A1 (en) * 2008-11-28 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Photosensor and display device
US20100140613A1 (en) * 2008-12-05 2010-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100159639A1 (en) * 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US20100155719A1 (en) * 2008-12-19 2010-06-24 Junichiro Sakata Method for manufacturing semiconductor device
US20100163868A1 (en) * 2008-12-26 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100167464A1 (en) * 2008-12-25 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100163866A1 (en) * 2008-12-25 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100165255A1 (en) * 2008-12-25 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100187523A1 (en) * 2009-01-23 2010-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100193783A1 (en) * 2009-01-30 2010-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100202090A1 (en) * 2009-02-09 2010-08-12 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US20100205519A1 (en) * 2005-09-21 2010-08-12 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
US20100207117A1 (en) * 2009-02-13 2010-08-19 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US20100207118A1 (en) * 2009-02-13 2010-08-19 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US20100207119A1 (en) * 2009-02-13 2010-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of the semiconductor device
US20100213460A1 (en) * 2009-02-20 2010-08-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100224872A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100244021A1 (en) * 2009-03-27 2010-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
US20100244003A1 (en) * 2004-11-02 2010-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Light-Emitting Device
US20100244031A1 (en) * 2009-03-30 2010-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100244020A1 (en) * 2009-03-26 2010-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100253209A1 (en) * 2009-04-03 2010-10-07 Spindler Jeffrey P Tandem white oled with efficient electron transfer
US20100252825A1 (en) * 2003-12-15 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Device and Electronic Devices
US20100252832A1 (en) * 2009-04-02 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100252826A1 (en) * 2008-10-03 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US20100252827A1 (en) * 2009-04-02 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100264433A1 (en) * 2009-04-17 2010-10-21 Chimei Innolux Corporation System for displaying images
US20100279474A1 (en) * 2009-05-01 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100289010A1 (en) * 2006-08-14 2010-11-18 Inktec Co., Ltd. Organic electroluminescent device and preparation method thereof
US20100304529A1 (en) * 2009-05-29 2010-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100301316A1 (en) * 2009-05-29 2010-12-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US20100301329A1 (en) * 2009-05-29 2010-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100301317A1 (en) * 2009-05-29 2010-12-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US20100307774A1 (en) * 2008-01-24 2010-12-09 Tinnen Baard Martin Device and method for isolating a section of a wellbore
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
US20110003428A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110003430A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20110003418A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US20110003427A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110003429A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110006301A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
US20110008930A1 (en) * 2009-06-30 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110006302A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110012117A1 (en) * 2009-07-18 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20110012112A1 (en) * 2009-07-18 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20110012118A1 (en) * 2009-07-18 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110012105A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110012116A1 (en) * 2009-07-18 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110012106A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110014745A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US20110024740A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110027918A1 (en) * 2009-07-28 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Inspection method and manufacturing method of light-emitting device
US20110024751A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110032444A1 (en) * 2009-08-07 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110031494A1 (en) * 2006-10-31 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
US20110032435A1 (en) * 2006-04-06 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
US20110031476A1 (en) * 2009-08-05 2011-02-10 Yamagata Promotional Organization For Industrial Technology Organic electroluminescence element
US20110031496A1 (en) * 2009-08-07 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US20110031491A1 (en) * 2009-07-31 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110031498A1 (en) * 2009-08-07 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110031492A1 (en) * 2009-08-07 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20110049518A1 (en) * 2009-09-02 2011-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
US20110053322A1 (en) * 2009-06-30 2011-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110049510A1 (en) * 2009-08-27 2011-03-03 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US20110057918A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US20110057865A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US20110058116A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US20110057179A1 (en) * 2009-09-07 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Device
US20110057186A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US20110057188A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing same
US20110059575A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20110063262A1 (en) * 2009-09-16 2011-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US20110062434A1 (en) * 2009-09-16 2011-03-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US20110062428A1 (en) * 2006-04-28 2011-03-17 Semiconductor Energy Laboratory Co., Ltd. Anthracene Derivative, and Light-Emitting Element, Light-Emitting Device, Electronic Device Using Anthracene Derivative
US20110064186A1 (en) * 2009-09-16 2011-03-17 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
US20110062435A1 (en) * 2009-09-16 2011-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7911129B2 (en) 2005-04-13 2011-03-22 Novaled Ag Arrangement for an organic pin-type light-emitting diode and method for manufacturing
US20110069805A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic appliance including the display device
US20110068334A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110068852A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power circuit, and manufacturing mkethod of semiconductor device
US20110069047A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110068388A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110073991A1 (en) * 2009-09-30 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Redox capacitor and manufacturing method thereof
US20110079777A1 (en) * 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110084271A1 (en) * 2009-10-14 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110085635A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device and driving method thereof
US20110084269A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20110085104A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
US20110084265A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including the same
US20110084264A1 (en) * 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor layer and semiconductor device
US20110084268A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110084266A1 (en) * 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
US20110089414A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110090006A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Analog circuit and semiconductor device
US20110090204A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same
US20110090207A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
US20110089416A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110090183A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
US20110102696A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic appliance including the same
US20110101339A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110101379A1 (en) * 2009-11-02 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Method for Manufacturing Light-Emitting Element, Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Appliance
US20110101338A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
US20110101336A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
US20110102697A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110101337A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
US20110102018A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US20110101356A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
US20110101942A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
US20110101331A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110108836A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110108834A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110108706A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US20110111558A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
US20110114945A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110114999A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same, and transistor
US20110114943A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110114944A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
US20110115545A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110114941A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Device including nonvolatile memory element
US20110114942A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110114480A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for packaging target material and method for mounting target
US20110115763A1 (en) * 2008-07-31 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110122673A1 (en) * 2009-11-24 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
US20110122670A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110121285A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110121284A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
US20110121289A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US20110124153A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110121277A1 (en) * 2004-02-13 2011-05-26 Idemitsu Kosan Co., Ltd. Organic electroluminescent device
US20110128777A1 (en) * 2009-11-27 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110127579A1 (en) * 2009-11-28 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US20110127525A1 (en) * 2009-11-27 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110127526A1 (en) * 2009-11-27 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
US20110127510A1 (en) * 2009-12-01 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
US20110127906A1 (en) * 2009-11-27 2011-06-02 Seiko Epson Corporation Light-emitting device, display device, and electronic apparatus
US20110128461A1 (en) * 2009-11-30 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
US20110127524A1 (en) * 2009-11-27 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110127561A1 (en) * 2008-07-30 2011-06-02 Nobuhiro Ide Organic electroluminescence device and method of fabricating the same
US7956531B2 (en) 2004-01-30 2011-06-07 Cambridge Display Technology Limited Display device having a plurality of pixels each comprising sub-pixels
US7955719B2 (en) 2008-01-30 2011-06-07 Global Oled Technology Llc Tandem OLED device with intermediate connector
US20110134350A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US20110134683A1 (en) * 2009-11-06 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110133180A1 (en) * 2009-12-08 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110133191A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110133196A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110133177A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same
US20110134345A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110133181A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110133182A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110133178A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110133179A1 (en) * 2009-12-08 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110140098A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US20110140108A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US20110140109A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110140099A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110147736A1 (en) * 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
US20110148497A1 (en) * 2009-12-23 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110148835A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device including optical sensor and driving method thereof
US20110148455A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
US20110148463A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
US20110148826A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
US20110148846A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
US20110156025A1 (en) * 2009-12-28 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20110156027A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110157252A1 (en) * 2009-12-28 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20110156022A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110156028A1 (en) * 2009-12-28 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110156024A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
US20110157961A1 (en) * 2009-12-28 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110156026A1 (en) * 2009-12-28 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110156023A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110157131A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
US20110175083A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device
US20110175670A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US20110175646A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110175833A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
US20110175894A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
US20110175087A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110175883A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US20110175895A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
US20110176355A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20110176263A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
US20110176348A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110175861A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110175104A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110182110A1 (en) * 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US20110181631A1 (en) * 2005-08-24 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US20110180757A1 (en) * 2009-12-08 2011-07-28 Nemanja Vockic Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof
US20110181806A1 (en) * 2010-01-24 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US20110180796A1 (en) * 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110181802A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display method of display device
US20110187762A1 (en) * 2005-04-19 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic apparatus
US20110187410A1 (en) * 2009-12-11 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US20110186837A1 (en) * 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US20110186825A1 (en) * 2005-09-12 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Quinoxaline Derivative, and Light-Emitting Element, Light-Emitting Device, and Electronic Appliance Using the Same
US20110187688A1 (en) * 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the same
US20110193081A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110193846A1 (en) * 2010-02-11 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110193080A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance
US20110193077A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110194332A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110193078A1 (en) * 2010-02-10 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US20110194327A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US20110198483A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20110199364A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method
US20110199365A1 (en) * 2010-02-18 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US20110198593A1 (en) * 2010-02-05 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110199351A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US20110198988A1 (en) * 2010-02-16 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex and light-emitting element, lighting device, and electronic device including the organometallic complex
US20110199404A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US20110199816A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US20110205254A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US20110204371A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110204362A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110204928A1 (en) * 2010-02-23 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device, semiconductor device, and driving method thereof
US20110204365A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110205209A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving display device
US20110205775A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110207269A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and manufacturing method of the same
US20110205774A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
US20110204968A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
US20110210332A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110212569A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110212605A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
US20110210339A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110210957A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US20110210327A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US20110210949A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and e-book reader provided therewith
US20110212570A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110215325A1 (en) * 2010-03-05 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110215317A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20110216566A1 (en) * 2010-03-05 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20110216875A1 (en) * 2010-03-02 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US20110216876A1 (en) * 2010-03-02 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US20110216043A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
US20110216571A1 (en) * 2010-03-04 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US20110215331A1 (en) * 2010-03-05 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110215323A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110215861A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20110215326A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20110215385A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110215308A1 (en) * 2010-03-08 2011-09-08 Samsung Mobile Display Co., Ltd. Organic light-emitting device and method of manufacturing the same
US8018144B2 (en) 2008-02-26 2011-09-13 Samsung Mobile Display Co., Ltd. Organic light emitting diode and method of fabricating the same
US8018152B2 (en) 2004-05-20 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including intermediate conductive layer having a hole-injection layer with an island-like structure
US20110221704A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving input circuit and method for driving input-output device
US20110220891A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110220889A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110221723A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device
US20110220011A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
US20110227062A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US20110227082A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110228584A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US20110228602A1 (en) * 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20110227074A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110227060A1 (en) * 2009-09-24 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110233541A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110233542A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110235389A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110233555A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110237025A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110233540A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110233530A1 (en) * 2010-03-23 2011-09-29 Semiconductor Energy Laboratory Co.,Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
US20110240963A1 (en) * 2010-04-01 2011-10-06 Jou Jwo-Huei Organic light-emitting diode with high color rendering
US20110248249A1 (en) * 2008-10-28 2011-10-13 Stephen Forrest Stacked white oled having separate red, green and blue sub-elements
US8071976B2 (en) 2008-08-04 2011-12-06 Novaled Ag Organic field-effect transistor and circuit
US20110303902A1 (en) * 2010-06-09 2011-12-15 Jou Jwo-Huei Organic light-emitting diode with high color rendering
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20120025180A1 (en) * 2009-04-01 2012-02-02 Ason Technology Co., Ltd. Organic electroluminescent device
US8115201B2 (en) 2008-08-08 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor formed within
US8129719B2 (en) 2008-09-01 2012-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8154193B2 (en) 2002-08-09 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent device
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8188477B2 (en) 2008-11-21 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE102010061013A1 (en) 2010-12-03 2012-06-06 Novaled Ag Organic electro-optical component
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8242494B2 (en) 2008-10-24 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor using multi-tone mask
US8247813B2 (en) 2009-12-04 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US8253126B2 (en) 1999-12-31 2012-08-28 Lg Chem. Ltd. Organic electronic device
US8253327B2 (en) 2007-06-28 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8268642B2 (en) 2009-10-05 2012-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
US20120241794A1 (en) * 2011-03-23 2012-09-27 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Device and Lighting Device
US20120248971A1 (en) * 2011-04-04 2012-10-04 Rohm Co., Ltd. Organic EL Device
US8283662B2 (en) 2009-11-18 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8289753B2 (en) 2009-11-06 2012-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8305109B2 (en) 2009-09-16 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
US8320516B2 (en) 2010-03-02 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8319215B2 (en) 2008-10-03 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US8330156B2 (en) 2008-12-26 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with a plurality of oxide clusters over the gate insulating layer
US8339836B2 (en) 2010-01-15 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8343817B2 (en) 2008-08-08 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8344788B2 (en) 2010-01-22 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8344387B2 (en) 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8357963B2 (en) 2010-07-27 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8367489B2 (en) 2009-11-28 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a stacked oxide material for thin film transistor
US8368066B2 (en) 2008-10-03 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US8372664B2 (en) 2009-12-25 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8377744B2 (en) 2009-12-04 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8378403B2 (en) 2010-07-02 2013-02-19 Semiconductor Energy Laboratory Semiconductor device
US8378344B2 (en) 2009-09-04 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with plural kinds of thin film transistors and circuits over one substrate
US8378393B2 (en) 2008-10-31 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Conductive oxynitride and method for manufacturing conductive oxynitride film
US8384085B2 (en) 2009-08-07 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20130056729A1 (en) * 2010-06-08 2013-03-07 Katsunori Misaki Thin film transistor substrate, lcd device including the same, and method for manufacturing thin film transistor substrate
US8395148B2 (en) 2008-11-07 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8400187B2 (en) 2009-10-16 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US8405092B2 (en) 2010-09-15 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Display device
US8406038B2 (en) 2010-05-14 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8410838B2 (en) 2009-11-20 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US8410492B2 (en) 2006-06-01 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and an electronic device, which include two layers including same light-emitting organic compound
US8411480B2 (en) 2010-04-16 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8420441B2 (en) 2009-07-31 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US8421081B2 (en) 2010-12-28 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device, memory module and electronic device
US8432718B2 (en) 2009-12-04 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8432730B2 (en) 2010-07-28 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8431449B2 (en) 2010-04-09 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8436431B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including gate and three conductor electrodes
US8441841B2 (en) 2010-02-19 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8440510B2 (en) 2010-05-14 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8441868B2 (en) 2010-04-09 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory having a read circuit
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
US8450755B2 (en) 2004-09-24 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8461586B2 (en) 2010-07-16 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461007B2 (en) 2010-04-23 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8467825B2 (en) 2009-11-20 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8466740B2 (en) 2010-10-29 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Receiving circuit, LSI chip, and storage medium
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8472231B2 (en) 2010-04-07 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8470650B2 (en) 2009-10-21 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method for the same
US8476719B2 (en) 2010-05-21 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8476626B2 (en) 2009-11-20 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including semiconductor and oxide semiconductor transistors
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8482974B2 (en) 2010-02-12 2013-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
US8482001B2 (en) 2009-12-25 2013-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8487436B2 (en) 2005-01-28 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US8487527B2 (en) 2005-05-04 2013-07-16 Lg Display Co., Ltd. Organic light emitting devices
US8488394B2 (en) 2010-08-06 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8492757B2 (en) 2009-03-06 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8492758B2 (en) 2009-09-24 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8502292B2 (en) 2010-07-16 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with memory cells
US8502220B2 (en) 2009-08-07 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8502200B2 (en) 2006-01-11 2013-08-06 Novaled Ag Electroluminescent light-emitting device comprising an arrangement of organic layers, and method for its production
US8502772B2 (en) 2010-07-02 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of input/output device
US8502221B2 (en) 2010-04-02 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with two metal oxide films and an oxide semiconductor film
US8502225B2 (en) 2009-09-04 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8508967B2 (en) 2010-09-03 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8514609B2 (en) 2010-02-05 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8518761B2 (en) 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
US8518739B2 (en) 2008-11-13 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8519990B2 (en) 2010-03-31 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
US8525304B2 (en) 2010-05-21 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8525551B2 (en) 2011-05-20 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8531870B2 (en) 2010-08-06 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8530672B2 (en) 2007-03-23 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and electronic device using anthracene derivative
US8530289B2 (en) 2010-04-23 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
WO2013137088A1 (en) * 2012-03-14 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8541782B2 (en) 2009-11-06 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for evaluating oxide semiconductor and method for manufacturing semiconductor device
US8542034B2 (en) 2011-05-20 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8542528B2 (en) 2010-08-06 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8547771B2 (en) 2010-08-06 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8546181B2 (en) 2011-09-29 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8546225B2 (en) 2010-04-23 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8546180B2 (en) 2009-07-31 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8553447B2 (en) 2010-10-05 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US8552440B2 (en) 2010-12-24 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Lighting device
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8564331B2 (en) 2011-05-13 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8563973B2 (en) 2010-03-19 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8569750B2 (en) 2008-12-19 2013-10-29 Panasonic Corporation Organic electroluminescence element
US8569753B2 (en) 2010-06-04 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Storage device comprising semiconductor elements
US8570065B2 (en) 2011-04-13 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Programmable LSI
US8575631B2 (en) 2010-12-24 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Lighting device
US8575960B2 (en) 2011-05-20 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8576620B2 (en) 2009-11-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8576636B2 (en) 2010-07-16 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8575985B2 (en) 2011-01-05 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Storage element, storage device, and signal processing circuit
US8582349B2 (en) 2010-08-26 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8581818B2 (en) 2010-03-31 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
US8586974B2 (en) 2010-12-24 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and lighting device
US8587193B2 (en) 2006-07-04 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
US8587342B2 (en) 2011-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8593856B2 (en) 2010-01-20 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8592261B2 (en) 2010-08-27 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for designing semiconductor device
US8592852B2 (en) 2010-05-21 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and lighting device
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8599604B2 (en) 2010-10-25 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
US8604472B2 (en) 2011-11-09 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8605477B2 (en) 2010-04-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
US8604476B2 (en) 2010-11-05 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
US8610120B2 (en) 2010-09-15 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US8610187B2 (en) 2009-12-18 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
US8614910B2 (en) 2010-07-29 2013-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8614916B2 (en) 2010-08-06 2013-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8617725B2 (en) 2007-08-31 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic appliance
US8619470B2 (en) 2010-06-23 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with long data holding period
US8624237B2 (en) 2008-07-31 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8629432B2 (en) 2009-01-16 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8630110B2 (en) 2011-05-06 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8628987B2 (en) 2010-08-27 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of thin film transistor, liquid crystal display device, and semiconductor device
US8630127B2 (en) 2010-06-25 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8630130B2 (en) 2011-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, memory unit, and signal processing circuit
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8633480B2 (en) 2009-11-06 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8638322B2 (en) 2010-02-05 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Display device
US8638123B2 (en) 2011-05-20 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Adder including transistor having oxide semiconductor layer
US8637354B2 (en) 2010-06-30 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8644048B2 (en) 2010-09-13 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US8649208B2 (en) 2011-05-20 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8648343B2 (en) 2009-07-23 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8653537B2 (en) 2004-08-13 2014-02-18 Novaled Ag Layer assembly for a light-emitting component
US8653520B2 (en) 2010-02-12 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8653513B2 (en) 2010-02-26 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with sidewall insulating layer
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659013B2 (en) 2010-04-09 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8658448B2 (en) 2010-12-10 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664118B2 (en) 2011-07-08 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8664647B2 (en) 2009-07-23 2014-03-04 Kaneka Corporation Organic electroluminescent element
US8665403B2 (en) 2010-05-21 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8664036B2 (en) 2009-12-18 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8669556B2 (en) 2010-12-03 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8675394B2 (en) 2010-08-04 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with oxide semiconductor transistor
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8674738B2 (en) 2011-05-20 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674351B2 (en) 2010-12-28 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor memory device
US8675382B2 (en) 2011-02-17 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Programmable LSI
US8674979B2 (en) 2009-10-30 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
US8674972B2 (en) 2010-09-08 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US8680693B2 (en) * 2006-01-18 2014-03-25 Lg Chem. Ltd. OLED having stacked organic light-emitting units
US8680529B2 (en) 2011-05-05 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8687411B2 (en) 2011-01-14 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and detecting method for defective memory cell in memory device
US8686750B2 (en) 2010-05-13 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Method for evaluating semiconductor device
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8687416B2 (en) 2010-12-28 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit comprising buffer memory device
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8692579B2 (en) 2011-05-19 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Circuit and method of driving the same
US8692823B2 (en) 2010-08-06 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method of the same
US8698521B2 (en) 2011-05-20 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8698214B2 (en) 2011-10-27 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8705292B2 (en) 2011-05-13 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory circuit with an oxide semiconductor transistor for reducing power consumption and electronic device
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8703531B2 (en) 2010-03-05 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
US8705267B2 (en) 2010-12-03 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, method for driving the same, and semiconductor device
US8704806B2 (en) 2009-12-10 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8710762B2 (en) 2010-06-10 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. DC/DC converter, power supply circuit, and semiconductor device
US8711312B2 (en) 2010-04-12 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8717806B2 (en) 2011-01-14 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Storage element, storage device, signal processing circuit, and method for driving storage element
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8723176B2 (en) 2012-02-02 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8724407B2 (en) 2011-03-24 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8728883B2 (en) 2010-11-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8729613B2 (en) 2011-10-14 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8730730B2 (en) 2011-01-26 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Temporary storage circuit, storage device, and signal processing circuit
US8729795B2 (en) 2005-06-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8729938B2 (en) 2011-05-20 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Phase locked loop and semiconductor device using the same
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
US8737109B2 (en) 2010-08-27 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8735874B2 (en) 2011-02-14 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and method for manufacturing the same
US8736371B2 (en) 2011-05-13 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistors each of which includes an oxide semiconductor
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US8744038B2 (en) 2011-09-28 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Shift register circuit
US8742804B2 (en) 2011-05-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Divider circuit and semiconductor device using the same
US8742422B2 (en) 2009-09-04 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8742405B2 (en) 2011-02-11 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting unit, light emitting device, and lighting device
US8748880B2 (en) 2009-11-20 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8748224B2 (en) 2010-08-16 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8748215B2 (en) 2009-11-28 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8748881B2 (en) 2009-11-28 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8748241B2 (en) 2011-12-23 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8748223B2 (en) 2009-09-24 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
US8750022B2 (en) 2010-04-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US8748930B2 (en) 2010-07-26 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and manufacturing method of light-emitting device
US8748889B2 (en) 2010-07-27 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8750023B2 (en) 2010-09-13 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
US8753928B2 (en) 2011-03-11 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8754839B2 (en) 2010-11-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
US8754409B2 (en) 2011-03-25 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Field-effect transistor, and memory and semiconductor circuit including the same
US8760959B2 (en) 2011-03-18 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US8760046B2 (en) 2008-07-10 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device using the same
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8767442B2 (en) 2010-09-13 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell array
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8766329B2 (en) 2011-06-16 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US8767159B2 (en) 2007-05-18 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8766252B2 (en) 2010-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
US8766255B2 (en) 2011-03-16 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including gate trench and isolation trench
US8773173B2 (en) 2011-12-22 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, image display device, storage device, and electronic device
US8772795B2 (en) 2011-02-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and lighting device
US8772769B2 (en) 2011-10-13 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8772768B2 (en) 2010-12-28 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
US8772701B2 (en) 2010-05-28 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photodetector and display device with light guide configured to face photodetector circuit and reflect light from a source
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8773906B2 (en) 2011-01-27 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US8772771B2 (en) 2012-04-30 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8772094B2 (en) 2011-11-25 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8778729B2 (en) 2010-08-05 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8779418B2 (en) 2009-10-09 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8779432B2 (en) 2011-01-26 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8779798B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Arithmetic circuit and method of driving the same
US8785266B2 (en) 2011-01-12 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8785926B2 (en) 2012-04-17 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8787102B2 (en) 2011-05-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and signal processing circuit
US8786177B2 (en) 2009-09-29 2014-07-22 Sumitomo Chemical Company, Limited Single-photon type organic electroluminescent element
US8787084B2 (en) 2011-03-30 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8785990B2 (en) 2005-10-14 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first and second or drain electrodes and manufacturing method thereof
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8787073B2 (en) 2010-08-26 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
US8790960B2 (en) 2010-04-28 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8791516B2 (en) 2011-05-20 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8790961B2 (en) 2011-12-23 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8796681B2 (en) 2011-09-07 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8797785B2 (en) 2010-11-12 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
US8802515B2 (en) 2010-11-11 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
US8803559B2 (en) 2011-04-28 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit having switching element, capacitor, and operational amplifier circuit
US8803142B2 (en) 2009-10-21 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8811064B2 (en) 2011-01-14 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including multilayer wiring layer
US8809851B2 (en) 2010-05-14 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8809992B2 (en) 2011-01-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
US8809154B2 (en) 2011-12-27 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8809927B2 (en) 2011-02-02 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8809855B2 (en) 2011-10-19 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809870B2 (en) 2011-01-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809853B2 (en) 2011-03-04 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8815640B2 (en) 2011-10-24 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8816349B2 (en) 2009-10-09 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
US8817527B2 (en) 2011-05-13 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8816469B2 (en) 2010-01-29 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising protection circuit with oxide semiconductor
US8816662B2 (en) 2010-05-21 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, semiconductor device and display device
US8824192B2 (en) 2011-05-06 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8823893B2 (en) 2009-12-18 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device with transistor including oxide semiconductor layer and electronic device
US8824193B2 (en) 2011-05-18 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US8823082B2 (en) 2010-08-19 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8824194B2 (en) 2011-05-20 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8822989B2 (en) 2011-09-22 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8822991B2 (en) 2009-02-05 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8823754B2 (en) 2010-04-09 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
US8829586B2 (en) 2010-02-05 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device having oxide semiconductor layer
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
US8828811B2 (en) 2010-04-23 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment
US8828794B2 (en) 2011-03-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8837202B2 (en) 2010-09-29 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8835918B2 (en) 2011-09-16 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8835214B2 (en) 2010-09-03 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8841662B2 (en) 2009-11-06 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8848449B2 (en) 2011-05-20 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for driving memory device
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8847627B2 (en) 2011-05-20 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8846459B2 (en) 2011-10-24 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8853684B2 (en) 2010-05-21 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8853680B2 (en) 2011-03-30 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
US8853690B2 (en) 2009-04-16 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor layer
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8853697B2 (en) 2012-03-01 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8860021B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
US8860023B2 (en) 2012-05-01 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8860108B2 (en) 2009-10-30 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide-based thin-film transistor (TFT) semiconductor memory device having source/drain electrode of one transistor connected to gate electrode of the other
US8861288B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Level-shift circuit and semiconductor integrated circuit
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8865534B2 (en) 2010-04-23 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8865555B2 (en) 2011-01-26 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8871304B2 (en) 2010-11-02 2014-10-28 Ube Industries, Ltd. (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US8872179B2 (en) 2011-11-30 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
US8872171B2 (en) 2009-05-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8878574B2 (en) 2012-08-10 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8878173B2 (en) 2010-07-02 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor and metal oxide
US8877350B2 (en) 2007-12-11 2014-11-04 Global Oled Technology Llc White OLED with two blue light-emitting layers
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
US8884470B2 (en) 2010-09-13 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8884283B2 (en) 2010-06-04 2014-11-11 Semiconductor Energy Laboratory Co., Ltd Memory semiconductor device having aligned side surfaces
US8884284B2 (en) 2011-12-23 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8884294B2 (en) 2010-06-11 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8885437B2 (en) 2011-12-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Storage device and driving method thereof
US8884651B2 (en) 2009-10-16 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
US8890152B2 (en) 2011-06-17 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8890150B2 (en) 2011-01-27 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8890159B2 (en) 2012-08-03 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device
US8890166B2 (en) 2009-09-04 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8889477B2 (en) 2011-06-08 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film utilizing sputtering target
US8895976B2 (en) 2010-06-25 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8896046B2 (en) 2010-11-05 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8896014B2 (en) 2010-11-24 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, manufacturing method thereof, and lighting device
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
US8896345B2 (en) 2012-04-30 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
US8902209B2 (en) 2010-09-10 2014-12-02 Semiconductor Energy Laboatory Co., Ltd. Display device
US8901558B2 (en) 2012-11-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having multiple gates
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
US8901552B2 (en) 2010-09-13 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Top gate thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8906737B2 (en) 2010-06-18 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8913050B2 (en) 2007-07-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8912541B2 (en) 2009-08-07 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
US8912985B2 (en) 2011-05-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
US8912596B2 (en) 2011-07-15 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916865B2 (en) 2010-06-18 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8922182B2 (en) 2009-12-04 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. DC converter circuit and power supply circuit
US8921853B2 (en) 2012-11-16 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having oxide semiconductor layer
US8921849B2 (en) 2011-09-15 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Insulated-gate field-effect transistor
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
US8929161B2 (en) 2011-04-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US8928645B2 (en) 2010-05-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8928053B2 (en) 2010-08-27 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Input/output device
US8927982B2 (en) 2011-03-18 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US8927990B2 (en) 2011-10-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8927351B2 (en) 2009-11-06 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8932903B2 (en) 2012-05-10 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
US8936963B2 (en) 2009-03-13 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8937304B2 (en) 2011-01-28 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8937305B2 (en) 2011-10-24 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8941127B2 (en) 2010-03-31 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Field-sequential display device
US8941790B2 (en) 2010-05-21 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US20150028312A1 (en) * 2012-01-10 2015-01-29 Osram Opto Semiconductors Gmbh Optoelectronic component, method for producing an optoelectronic component, device for separating a room, and piece of furniture
US8945982B2 (en) 2010-04-23 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US8946702B2 (en) 2012-04-13 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8947910B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising inverters and capacitor, and driving method thereof
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8946790B2 (en) 2011-06-10 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8953112B2 (en) 2010-09-15 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8952380B2 (en) 2011-10-27 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8952995B2 (en) 2009-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US8952728B2 (en) 2010-08-27 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8952722B2 (en) 2012-10-17 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and method for driving programmable logic device
US8952381B2 (en) 2012-06-29 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8958231B2 (en) 2011-06-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Memory device including first to seventh transistors
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8956929B2 (en) 2011-11-30 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
US8963148B2 (en) 2012-11-15 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8963517B2 (en) 2009-10-21 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit comprising transistor which includes an oixide semiconductor
US8964450B2 (en) 2011-05-20 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and signal processing circuit
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8969182B2 (en) 2011-04-27 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8970251B2 (en) 2012-05-02 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8975695B2 (en) 2013-04-19 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
US8975930B2 (en) 2012-08-10 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8975634B2 (en) 2011-10-07 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film
US8982589B2 (en) 2010-03-02 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and RFID tag including boosting circuit
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US8981376B2 (en) 2012-08-02 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8987726B2 (en) 2009-07-23 2015-03-24 Kaneka Corporation Organic electroluminescent element
US8988116B2 (en) 2011-12-23 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8987727B2 (en) 2011-01-28 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
US8987730B2 (en) 2012-02-03 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988625B2 (en) 2011-11-11 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8987731B2 (en) 2012-05-31 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20150084044A1 (en) 2013-09-23 2015-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8993126B2 (en) 2010-06-25 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including a layer having a concentration gradient, light-emitting device, display, and electronic device
US8994009B2 (en) 2011-09-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US8994003B2 (en) 2010-09-22 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Power-insulated-gate field-effect transistor
US8993386B2 (en) 2009-03-12 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8994013B2 (en) 2012-05-18 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9001959B2 (en) 2011-08-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8999751B2 (en) 2009-10-09 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for making oxide semiconductor device
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US9001563B2 (en) 2011-04-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9007816B2 (en) 2011-11-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and memory device
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9007812B2 (en) 2010-09-14 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a cell array overlapping a driver circuit
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006635B2 (en) 2012-09-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Photodetector circuit and semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
US9007093B2 (en) 2012-05-30 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9012902B2 (en) 2011-03-31 2015-04-21 Panasonic Intellectual Property Management Co., Ltd. Organic electroluminescent element
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9012918B2 (en) 2009-03-27 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012041B2 (en) 2010-03-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US9012913B2 (en) 2012-01-10 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US9019320B2 (en) 2010-04-28 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
US9029852B2 (en) 2011-09-29 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9030105B2 (en) 2011-04-01 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9041442B2 (en) 2012-05-09 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9042161B2 (en) 2010-09-13 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9040984B2 (en) 2012-11-15 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor with ZrO or HfO gate insulator sandwiched between two SiO or AIO gate insulators over an oxide semiconductor film
US9041449B2 (en) 2011-04-29 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048439B2 (en) 2010-03-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device comprising a metal complex having a metal-oxygen bond and an aromatic ligand
US9048324B2 (en) 2012-05-10 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048321B2 (en) 2011-12-02 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9048320B2 (en) 2008-09-19 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Display device including oxide semiconductor layer
US9047836B2 (en) 2009-12-24 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9048105B2 (en) 2011-05-20 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US9048832B2 (en) 2013-02-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9047947B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including register components
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US9054200B2 (en) 2012-04-13 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9053675B2 (en) 2011-11-11 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and liquid crystal display device
US9055245B2 (en) 2011-09-22 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Photodetector including difference data generation circuit and data input selection circuit
US9059689B2 (en) 2013-01-24 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including flip-flop and logic circuit
US9059295B2 (en) 2010-04-02 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having an oxide semiconductor and metal oxide films
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9059704B2 (en) 2011-05-31 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9059029B2 (en) 2012-03-05 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9065438B2 (en) 2013-06-18 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9064853B2 (en) 2011-08-19 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9064966B2 (en) 2012-12-28 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor
US9064884B2 (en) 2010-06-04 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having aligned side surfaces
US9064596B2 (en) 2013-02-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9064574B2 (en) 2012-11-06 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9070778B2 (en) 2011-12-20 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US