CN100431195C - Organic lighting element - Google Patents

Organic lighting element Download PDF

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Publication number
CN100431195C
CN100431195C CNB2005100669331A CN200510066933A CN100431195C CN 100431195 C CN100431195 C CN 100431195C CN B2005100669331 A CNB2005100669331 A CN B2005100669331A CN 200510066933 A CN200510066933 A CN 200510066933A CN 100431195 C CN100431195 C CN 100431195C
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organic
illuminating element
layer
organic illuminating
charge generating
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CN1688185A (en
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游宗烨
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Optoelectronic Science Co ltd
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AU Optronics Corp
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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  • Chemical & Material Sciences (AREA)
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Abstract

The present invention relates to an organic luminous element which comprises a lower electrode, at least two organic luminous units, at least one charge generation layer and an upper electrode, wherein the two organic luminous units are stacked on the lower electrode; the charge generation layer is arranged between the two adjacent organic luminous units; the upper electrode is arranged on the organic luminous units. The charge generation layer comprises fullerene or derivates thereof, and has the capability of generating electrons and cavities.

Description

Organic illuminating element
Technical field
The present invention relates to a kind of display element, particularly relate to a kind of organic electroluminescent display device.
Background technology
Along with making rapid progress of science and technology, organic material also is used in the various circuit element gradually widely, for example a kind of organic electric-excitation luminescent that utilizes organic material to make shows (organic electroluminescentdisplay, OLED) panel is just with simple framework and splendid working temperature, contrast, visual angle and possess light-emitting diode is arranged (Light-emitting diode, LED) advantage such as the rectification and the characteristics of luminescence, and in the monitor market, attracted attention gradually.
In organic electric-excitation luminescent displaying panel, mainly all be to carry out the image demonstration by carrying out active luminous organic illuminating element with current drives on it, please refer to Fig. 1, Fig. 1 is the generalized section of an existing organic electroluminescence display panel 10.As shown in Figure 1, organic electroluminescence display panel 10 comprises that a substrate 12 and a plurality of organic illuminating element 20 be located on the substrate 12.And each organic illuminating element 20 comprises that all a bottom electrode 14, an organic light-emitting units 16 and a top electrode 18 are stacked on the substrate 12 in regular turn.
Wherein organic light-emitting units 16 is a multilayer stack structure, comprises that at least a hole injection layer (holeinjecting layer) 22, one organic luminous layer (organic electroluminescent layer) 24 and one electron injecting layer (electron injection layer) 26 is stacked on the bottom electrode 14 in regular turn.
When applying under the voltage, top electrode 18 in the organic illuminating element 20 will produce electronics and hole respectively with bottom electrode 14, and via electron injecting layer 26 and hole injection layer 22 to intermediate transport, and carry out active luminous in conjunction with forming exciton deexcitation luminescent substance in organic luminous layer 24 places.
No matter yet such traditional element structure on operating efficiency and component life, all have limit, and cause the display quality of organic light emitting display can not continue to promote.Therefore, be as improving the composition structure of organic light emitting display, real with the display quality of further lifting organic light emitting display is current important research direction.
Summary of the invention
One of purpose of the present invention just provides a kind of organic illuminating element with a plurality of organic light-emitting units storehouses, with the display quality of further lifting organic light emitting display.
For reaching above-mentioned and other purpose, one organic electroluminescent display device is provided in one embodiment of this invention, it comprises a bottom electrode, at least two organic light-emitting units, be stacked on the bottom electrode, at least one charge generating layers (charge-generation layer) is arranged between the two adjacent organic light-emitting units, an and top electrode, be located on those organic light-emitting units, wherein charge generating layers comprises fullerene (fullerene) or derivatives thereof, and has the ability of transmitting electronics and hole.This at least two organic light-emitting units comprises that respectively a hole injection layer, an electron injecting layer be located at this hole injection layer top, and an organic luminous layer is between this hole injection layer and this electron injecting layer.This at least two organic illuminating element comprises respectively that also at least one resilient coating is arranged between this charge generating layers and this electron injecting layer, and wherein the work function of this resilient coating is not filled up between the molecular orbit at the minimum of this charge generating layers and this electron injecting layer.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the generalized section of an existing organic electric-excitation luminescent displaying panel.
Fig. 2 is the generalized section of an organic illuminating element in the first embodiment of the invention.
Fig. 3 is the generalized section of organic light-emitting units among Fig. 2.
The simple symbol explanation
10~organic electric-excitation luminescent displaying panel;
12~substrate; 14~bottom electrode;
16~organic light-emitting units; 18~top electrode;
20~organic illuminating element; 22~hole injection layer;
24~organic luminous layer; 26~electron injecting layer;
110~organic illuminating element; 112~bottom electrode;
114~top electrode; 116~organic light-emitting units;
118~charge generating layers; 120~resilient coating;
122~hole injection layer; 124~hole transmission layer;
126~organic luminous layer; 128~electron transfer layer;
132~electron injecting layer;
Embodiment
Please refer to Fig. 2, Fig. 2 is the generalized section of an organic illuminating element 110 in the first embodiment of the invention.As shown in Figure 2, organic illuminating element 110 comprises that a bottom electrode 112, two organic light-emitting units 116 and 116 are stacked on the bottom electrode 112, a charge generating layers (charge-generation layer) 118 is arranged between the two adjacent organic light-emitting units 116, and a top electrode 114, be located on this two organic light-emitting units 116.In addition, in one embodiment of this invention, organic illuminating element 110 comprises that also a resilient coating 120 is located between the organic light-emitting units 116 of charge generating layers 118 and its below.Bottom electrode 112 then is electrically connected to a voltage source respectively with top electrode 114, and in the time of on applying a voltage to bottom electrode 112 and top electrode 114, each organic light-emitting units 116 will be simultaneously luminous, shows to carry out image.
Please refer to Fig. 3, Fig. 3 is the generalized section of organic light-emitting units 116 among Fig. 2.As shown in Figure 3, organic light-emitting units 116 comprises that a hole injection layer 122, a hole transmission layer 124, an organic luminous layer 126, an electron transfer layer 128 and an electron injecting layer 132 are stacked on the bottom electrode 112 in regular turn.In one embodiment of this invention, hole injection layer 122 is doped with the p type alloy of weight concentration 0.1% to 50%, for example TF-TCNQ, iron chloride (FeCl 3) or the combination of above-mentioned material, and electron injecting layer 132 is doped with the n type alloy of weight concentration 1% to 99%, metal halide for example is to assist the transmission in electronics or hole.
Owing to pass through the organic light-emitting units 116 of a plurality of mutual storehouses among the present invention, mode with series connection is simultaneously luminous, therefore, the charge generating layers of being located between each organic light-emitting units 116 118 preferably has generation or transmission electronic/hole ability person, in one embodiment of this invention, the minimum molecular orbit (LUMO) that do not fill up of employed charge generating layers 118 does not fill up between the molecular orbit between the highest the minimum of molecular orbit (HOMO) and below electron injecting layer 132 that fill up of top hole injection layer 122, so that electronics and cavity energy are transmitted between each organic light-emitting units 116 smoothly.In addition, for fear of the organic material that in manufacturing process, hurts in the contiguous organic light-emitting units 116, so the charge generating layers 118 preferred organic materials of making of hot evaporation mode.
For satisfying above-mentioned condition, in one embodiment of this invention, charge generating layers 118 comprises fullerene (fullerene) or derivatives thereof, as C60, C70, C90 etc., 118 of charge generating layers comprise oligomerization fluorene compound (oligofluorenes) in another embodiment of the present invention, three fluorene compounds (terfluorene), three (9, the two aromatic radical fluorenes of 9-) (ter (9 for compound, 9-diaryfluorene) s), 9, (oligo (9 for the two aromatic radical fluorenes oligomeric compounds of 9-, on the whole the thickness of or derivatives thereof 9-diaryfluorene) s), and charge generating layers 118 be 0.1 nanometer to 100 nanometer.
From the above, if have an extra resilient coating 120 between the organic light-emitting units 116 of the charge generating layers 118 in the organic illuminating element 110 and its below, based on same reason, the material of resilient coating 120 selects same preferred work function not fill up person between the molecular orbit between charge generating layers 118 and electron injecting layer 132 minimum, with the effect of further raising electronics injection.In one embodiment of this invention, resilient coating 120 comprises the combination of aluminium, silver, nickel, titanium, calcium, magnesium, rubidium, tantalum or above-mentioned material.
To emphasize once more be, though be example only in the above-described embodiments with two mutual storehouse organic light-emitting units 116, organic illuminating element 110 structures of the present invention are described, yet in fact organic illuminating element 118 can comprise a plurality of mutual storehouse organic light- emitting units 116, and 116 of each adjacent organic light-emitting units are equipped with a charge generating layers 118, to assist the generation or the transmission of electrons/.
In addition, each organic light-emitting units 116 in the organic illuminating element 110 is the demand of visual display panel also, and use identical organic light-emitting units 116, perhaps adopt several different organic light-emitting units 116 to make up, for instance, each organic light-emitting units 116 in the organic illuminating element 110 can have identical glow color, and perhaps at least one organic light-emitting units 116 has different glow colors with other organic light-emitting units 116.
In addition, the organic illuminating element 110 of the manufacturing according to the present invention can be upper luminous organic luminescence element, down luminous organic luminescence element or double-side organic illuminating element, and the light that sends of this organic illuminating element can be red, green, blue or white photochromic.
For further specifying the present invention, following spy enumerates a plurality of embodiment, and with existing organic illuminating element as a comparative example, tests simultaneously, to illustrate superiority of the present invention.
In the first embodiment of the present invention, at first utilize ultraviolet ray and ozone that the tin indium oxide (ITO) as anode is handled, and then thereon in regular turn evaporation thickness be about the IDE406 of 60 nanometers as hole injection layer (HIL), thickness is about the NPB of 20 nanometers as hole transmission layer (HTL), thickness is about the green light emitting layer (EML) of 60 nanometers, thickness is about the electron transfer layer (ETL) of 10 nanometers and Alq that thickness is about 20 nanometers (is doped with weight concentration and is about 20%n type alloy, cesium fluoride for example), to constitute one first light-emitting component, then the evaporation thickness aluminium that is about 2 nanometers is about the carbon 60 (C60) of 5 nanometers as charge generating layers as resilient coating and thickness again, subsequently again on charge generating layers evaporation thickness be about the NPB of 60 nanometers as hole injection layer, and be about 2% p type alloy in wherein mixing weight concentration, as F4-TCNQ, then forming thickness more thereon in regular turn is about the NPB of 20 nanometers as hole transmission layer, thickness is about the green light emitting layer of 60 nanometers and the electron transfer layer that thickness is about 20 nanometers, and constitute one second light-emitting component, last form the aluminium (Al) that lithium fluoride (LiF) that thickness is about 1 nanometer and thickness are about 100 nanometers more thereon, with usefulness as negative electrode.
In the second embodiment of the present invention, at first utilize ultraviolet ray and ozone that the tin indium oxide (ITO) as anode is handled, and then thereon in regular turn evaporation thickness be about the IDE406 of 60 nanometers as hole injection layer (HIL), thickness is about the NPB of 20 nanometers as hole transmission layer (HTL), thickness is about the green light emitting layer (EML) of 60 nanometers, thickness is about the electron transfer layer (ETL) of 10 nanometers and Alq that thickness is about 20 nanometers (is doped with weight concentration and is about 20%n type alloy, cesium fluoride for example), to constitute one first light-emitting component, then the evaporation thickness aluminium that is about 2 nanometers is about the carbon 60 (C60) of 5 nanometers as charge generating layers as resilient coating and thickness again, subsequently again on charge generating layers evaporation thickness be about the IDE406 of 60 nanometers as hole injection layer, and be about 2% p type alloy in wherein mixing weight concentration, as F4-TCNQ, then forming thickness more thereon in regular turn is about the NPB of 20 nanometers as hole transmission layer, thickness is about the green light emitting layer of 60 nanometers and the electron transfer layer that thickness is about 20 nanometers, and constitute one second light-emitting component, last form the aluminium (Al) that lithium fluoride (LiF) that thickness is about 1 nanometer and thickness are about 100 nanometers more thereon, with usefulness as negative electrode.
In the third embodiment of the present invention, at first utilize ultraviolet ray and ozone that the tin indium oxide (ITO) as anode is handled, and then thereon in regular turn evaporation thickness be about the IDE406 of 60 nanometers as hole injection layer (HIL), thickness is about the NPB of 20 nanometers as hole transmission layer (HTL), thickness is about the green light emitting layer (EML) of 60 nanometers, thickness is about the electron transfer layer (ETL) of 10 nanometers and Alq that thickness is about 20 nanometers (is doped with weight concentration and is about 20%n type alloy, cesium fluoride for example), to constitute one first light-emitting component, then evaporation thickness is about the aluminium of 2 nanometers as resilient coating again, subsequently again on resilient coating evaporation thickness be about the NPB of 60 nanometers as hole injection layer, and be about 2% p type alloy in wherein mixing weight concentration, as F4-TCNQ, then forming thickness more thereon in regular turn is about the NPB of 20 nanometers as hole transmission layer, thickness is about the green light emitting layer of 60 nanometers and the electron transfer layer that thickness is about 20 nanometers, and constitute one second light-emitting component, last form the aluminium (Al) that lithium fluoride (LiF) that thickness is about 1 nanometer and thickness are about 100 nanometers more thereon, with usefulness as negative electrode.
In the fourth embodiment of the present invention, at first utilize ultraviolet ray and ozone that the tin indium oxide (ITO) as anode is handled, and then thereon in regular turn evaporation thickness be about the IDE406 of 60 nanometers as hole injection layer (HIL), thickness is about the NPB of 20 nanometers as hole transmission layer (HTL), thickness is about the green light emitting layer (EML) of 60 nanometers, thickness is about the electron transfer layer (ETL) of 10 nanometers and Alq that thickness is about 20 nanometers (is doped with weight concentration and is about 20%n type alloy, cesium fluoride for example), to constitute one first light-emitting component, then evaporation thickness is about the aluminium of 2 nanometers as resilient coating again, subsequently again on resilient coating evaporation thickness be about the IDE406 of 60 nanometers as hole injection layer, and be about 2% p type alloy in wherein mixing weight concentration, as F4-TCNQ, then forming thickness more thereon in regular turn is about the NPB of 20 sodium rice as hole transmission layer, thickness is about the green light emitting layer of 60 nanometers and the electron transfer layer that thickness is about 20 nanometers, and constitute one second light-emitting component, last form the aluminium (Al) that lithium fluoride (LiF) that thickness is about 1 nanometer and thickness are about 100 nanometers more thereon, with usefulness as negative electrode.
In the fifth embodiment of the present invention, at first utilize ultraviolet ray and ozone that the tin indium oxide (ITO) as anode is handled, and then thereon in regular turn evaporation thickness be about the IDE406 of 150 nanometers as hole injection layer (HIL), thickness is about the NPB of 20 nanometers as hole transmission layer (HTL), thickness is about the blue light-emitting layer (EML) of 30 nanometers, thickness is about the electron transfer layer (ETL) of 10 nanometers and Alq that thickness is about 20 nanometers (is doped with weight concentration and is about 20%n type alloy, cesium fluoride for example), to constitute one first light-emitting component, then evaporation thickness is about the carbon 60 (C60) of 10 nanometers as charge generating layers again, subsequently again on charge generating layers evaporation thickness be about the IDE406 of 30 nanometers as hole injection layer, and be about 2% p type alloy in wherein mixing weight concentration, as F4-TCNQ, then forming thickness more thereon in regular turn is about the NPB of 20 nanometers as hole transmission layer, thickness is about the Yellow luminous layer of 35 nanometers and the electron transfer layer that thickness is about 20 nanometers, and constitute one second light-emitting component, last form the aluminium (Al) that lithium fluoride (LiF) that thickness is about 1 nanometer and thickness are about 100 nanometers more thereon, with usefulness as negative electrode.
In the sixth embodiment of the present invention, at first utilize ultraviolet ray and ozone that the tin indium oxide (ITO) as anode is handled, and then thereon in regular turn evaporation thickness be about the IDE406 of 150 nanometers as hole injection layer (HIL), thickness is about the NPB of 20 nanometers as hole transmission layer (HTL), thickness is about the blue light-emitting layer (EML) of 30 nanometers, thickness is about the electron transfer layer (ETL) of 10 nanometers and Alq that thickness is about 20 nanometers (is doped with weight concentration and is about 20%n type alloy, cesium fluoride for example), to constitute one first light-emitting component, then the evaporation thickness aluminium that is about 2 nanometers is about the carbon 60 (C60) of 10 nanometers as charge generating layers as resilient coating and thickness again, subsequently again on charge generating layers evaporation thickness be about the IDE406 of 60 nanometers as hole injection layer, and be about 2% p type alloy in wherein mixing weight concentration, as F4-TCNQ, then forming thickness more thereon in regular turn is about the NPB of 20 nanometers as hole transmission layer, thickness is about the Yellow luminous layer of 35 nanometers and the electron transfer layer that thickness is about 30 nanometers, and constitute one second light-emitting component, last form the aluminium (Al) that lithium fluoride (LiF) that thickness is about 1 nanometer and thickness are about 100 nanometers more thereon, with usefulness as negative electrode.
In the seventh embodiment of the present invention, at first utilize ultraviolet ray and ozone that the tin indium oxide (ITO) as anode is handled, and then thereon in regular turn evaporation thickness be about the IDE406 of 150 nanometers as hole injection layer (HIL), thickness is about the NPB of 20 nanometers as hole transmission layer (HTL), thickness is about the blue light-emitting layer (EML) of 30 nanometers, thickness is about the electron transfer layer (ETL) of 10 nanometers and Alq that thickness is about 20 nanometers (is doped with weight concentration and is about 20%n type alloy, cesium fluoride for example), to constitute one first light-emitting component, then the evaporation thickness aluminium that is about 2 nanometers is about the carbon 60 (C60) of 10 nanometers as charge generating layers as resilient coating and thickness again, subsequently again on charge generating layers evaporation thickness be about the IDE406 of 30 nanometers as hole injection layer, and be about 2% p type alloy in wherein mixing weight concentration, as F4-TCNQ, then forming thickness more thereon in regular turn is about the NPB of 20 nanometers as hole transmission layer, thickness is about the Yellow luminous layer of 35 nanometers and the electron transfer layer that thickness is about 30 nanometers, and constitute one second light-emitting component, last form the aluminium (Al) that lithium fluoride (LiF) that thickness is about 1 nanometer and thickness are about 100 nanometers more thereon, with usefulness as negative electrode.
Experiment test according to the inventor, standard green glow organic illuminating element of the prior art is after the current density that reaches capacity (current density), its luminous efficiency is approximately 9 to 10 candle light/amperes, and in first and second embodiment, luminous efficiency then can distinctly reach about 21 and 20 candle light/amperes (cd/A).In the 3rd and the 4th embodiment, luminous efficiency then only distinctly reaches about 18 and 17 candle light/amperes (cd/A).And for luminous efficiency lower standard yellow light and blue light organic illuminating element (being about 4 candle light/amperes), after adopting framework of the present invention, for example in the 5th, the 6th and the 7th embodiment, luminous efficiency then can distinctly reach about 8,7 and 7 candle light/amperes (cd/A).Compared to prior art, organic illuminating element of the present invention is the organic light-emitting units 116 by a plurality of mutual storehouses mainly, and is simultaneously luminous in the mode of series connection, improving the efficient and the brightness of organic illuminating element, and can further improve the display quality of display floater.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.

Claims (12)

1, a kind of organic illuminating element comprises:
One bottom electrode;
At least two organic light-emitting units are laminated on this bottom electrode;
At least one charge generating layers is arranged between the two adjacent organic light-emitting units; And
One top electrode is located on this two organic light-emitting units at least;
Wherein this charge generating layers comprises the fullerene or derivatives thereof, and has the ability that produces electronics and hole,
Wherein this at least two organic light-emitting units comprises that respectively a hole injection layer, an electron injecting layer be located at this hole injection layer top, and an organic luminous layer is between this hole injection layer and this electron injecting layer,
This at least two organic illuminating element comprises respectively that also at least one resilient coating is arranged between this charge generating layers and this electron injecting layer, and wherein the work function of this resilient coating is not filled up between the molecular orbit at the minimum of this charge generating layers and this electron injecting layer.
2, organic illuminating element as claimed in claim 1, wherein this charge generating layers comprises oligomerization fluorene compound or derivatives thereof.
3, organic illuminating element as claimed in claim 1, wherein this charge generating layers comprises three fluorene compounds, three (9, the two aromatic radical fluorenes of 9-) compound, 9, the derivative of two aromatic radical fluorenes oligomeric compounds of 9-or above-mentioned material.
4, organic illuminating element as claimed in claim 1, wherein this charge generating layers comprises the derivative of carbon 60, carbon 70, carbon 90 or above-mentioned material.
5, organic illuminating element as claimed in claim 1, wherein this at least two organic light-emitting units comprises respectively that in addition a hole transmission layer is located between this hole injection layer and this organic luminous layer, and an electron transfer layer is located between this organic luminous layer and this electron injecting layer.
6, organic illuminating element as claimed in claim 1, wherein the minimum molecular orbit that do not fill up of this charge generating layers does not fill up between the molecular orbit between the highest the minimum of molecular orbit and this electron injecting layer that fill up of this hole injection layer.
7, organic illuminating element as claimed in claim 1, wherein this resilient coating comprises the combination of aluminium, silver, nickel, titanium, calcium, magnesium, rubidium, tantalum or above-mentioned material.
8, organic illuminating element as claimed in claim 1, wherein this electron injecting layer is doped with n type alloy, and this n type alloy comprises metal halide.
9, organic illuminating element as claimed in claim 1, wherein this hole injection layer is doped with p type alloy, and this p type alloy comprises the combination of TF-TCNQ, iron chloride or above-mentioned material.
10, organic illuminating element as claimed in claim 1, wherein the thickness of this charge generating layers is 0.1 nanometer to 100 nanometer.
11, organic illuminating element as claimed in claim 1, wherein this organic illuminating element is upper luminous organic luminescence element, following luminous organic luminescence element or double-side organic illuminating element.
12, organic illuminating element as claimed in claim 1, wherein the light that sends of this organic illuminating element is for red, green, blue or white photochromic.
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