KR100711890B1 - Organic Light Emitting Display and Fabrication Method for the same - Google Patents

Organic Light Emitting Display and Fabrication Method for the same Download PDF

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KR100711890B1
KR100711890B1 KR20050069173A KR20050069173A KR100711890B1 KR 100711890 B1 KR100711890 B1 KR 100711890B1 KR 20050069173 A KR20050069173 A KR 20050069173A KR 20050069173 A KR20050069173 A KR 20050069173A KR 100711890 B1 KR100711890 B1 KR 100711890B1
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layer
formed
light emitting
electrode
transparent
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KR20070014494A (en
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모연곤
신현수
정재경
진동언
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삼성에스디아이 주식회사
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5281Arrangements for contrast improvement, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50Organic light emitting devices
    • H01L2251/53Structure
    • H01L2251/5307Structure specially adapted for controlling the direction of light emission
    • H01L2251/5323Two-side emission, i.e. TOLED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays

Abstract

본 발명은 유기 발광표시장치 및 그의 제조방법에 관한 것이다. The present invention relates to an OLED display and a method of manufacture.
본 발명의 유기 발광표시장치는 기판과, 기판 하부에 형성되는 광변색성층과, 기판 상에 형성된 적어도 하나의 투명 박막트랜지스터와, 상기 투명 박막트랜지스터 상에 형성된 평탄화층과, 상기 평탄화층의 일영역 상에 형성되며, 상기 투명 박막트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 형성된 제1 전극층과, 상기 제1 전극층 상에 형성되며, 상기 제1 전극층을 적어도 부분적으로 노출되도록 개구부가 형성된 화소정의막과, 상기 화소정의막의 일영역 및 상기 개구부 상에 형성된 발광층과, 상기 발광층 상부에 형성되는 제2 전극층을 포함한다. An OLED display device according to the present invention is one region of the planarization layer and the planarization layer formed on at least one transparent thin film transistor and the transparent thin film transistor formed on the photochromic layer and the substrate is formed on the substrate and the substrate lower It is formed on the pixel defining a first electrode layer formed to be connected with one of source and drain electrodes of the transparent TFT and formed on the first electrode layer, an opening to expose the first electrode layer at least partially formed film, one region of the pixel defining layer and the light emitting layer formed on the opening portion and, a second electrode layer formed in the emission layer.
광변색성층, 투명 박막트랜지스터 A photochromic layer, a transparent thin film transistor

Description

유기 발광표시장치 및 그의 제조방법{Organic Light Emitting Display and Fabrication Method for the same} The organic light emitting display device and a method of manufacturing the same {Organic Light Emitting Display and Fabrication Method for the same}

도 1은 본 발명에 따른 유기 발광표시장치의 개략적인 단면도이다. 1 is a schematic cross-sectional view of the OLED display according to the present invention.

도 2a 내지 도 2c는 본 발명에 따른 유기 발광표시장치의 제조방법의 공정 순서도이다. Figures 2a to 2c is a process flow diagram of a method of manufacturing an organic light emitting display device according to the present invention.

♣ 도면의 주요 부분에 대한 부호의 설명 ♣ ♣ 2. Description of the Related Art ♣

100 : 기판 110 : 광변색성층 100: substrate 110: photochromic layer

120: 버퍼층 130 : 박막트랜지스터 120: buffer layer 130: thin film transistor

140: 평탄화층 150 : 제1 전극층 140: planarization layer 150: first electrode layer

160 : 화소정의막 170: 발광층 160: the pixel defining layer 170: emission layer

180 : 개구부 190 : 제2 전극층 180: opening portion 190: second electrode layer

본 발명은 유기 발광표시장치 및 그의 제조방법에 관한 것으로, 보다 구체적으로 유기 발광표시장치의 기판 하부에 광변색성층을 형성함으로써, 유기 발광표시장치가 어두운 곳에 노출되면 광변색성층은 투명하게 보이게 되고, 유기 발광표시장치가 빛 또는 자외선에 노출될 경우 광변색성층은 불투명한 색을 가지게됨으로써 블랙매트릭스와 같은 역할을 할 수 있는 유기 발광표시장치 및 그의 제조방법에 관한 것이다. The present invention relates to an OLED display and a method of producing, more specifically, by forming a photochromic layer to the substrate a lower portion of the OLED display, when the OLED display is exposed in a dark place photochromic layer is displayed transparent, and , when an OLED display exposed to light or UV-photochromic layer relates to an OLED display and a method of manufacture that can serve as a black matrix being had an opaque color.

유기 발광표시장치는 비교적 균일하며 평탄한 박막들로 이루어져 있다. The organic light emitting display device is made up of a relatively uniform and smooth thin films. 또한, 유기 발광표시장치는 빛이 발광되는 측의 전극이 투명한 전도성 박막으로 형성되고, 반대편의 전극은 주로 알루미늄이나 내화금속과 같은 금속으로 형성되어 있다. In addition, the OLED display is the electrode of the light emitting side from which light is formed of a transparent electrically conductive thin film, the electrode on the other side is formed mainly of a metal such as aluminum or a refractory metal. 그런데, 이러한 금속박막들은 반사율이 매우 커서 외부 광원으로부터의 강한 빛(태양광선을 비록한 강한 광원으로부터의 빛)이 직접 입사할 경우 화면의 선명도가 크게 저하되는 문제가 있다. However, such a metal thin film are so large that if the reflection ratio is a direct strong light is incident from an external light source (the sun's rays, although the light from a strong light source), there is a problem that the sharpness of the display significantly reduced.

따라서, 이와 같은 외광 반사에 의한 시인성의 저하를 막기 위해 일반적으로 디스플레이 표면이나 디스플레이 내부에 반사 방지막을 성막하는 방법이 있다. Therefore, there is a method for this film formation of the antireflection film on such an external light reflection in general within the display surface and the display in order to prevent the deterioration of visibility by. 이러한 기술은 예를 들면, 통상적인 구조 및 방전된 구조의 유기 발광표시장치에서, 저반사율의 유사 다이아몬드 탄소 박막을 금속 전극막과 절연막 사이, 절연막과 형광막 사이 또는 금속 도전막과 형광막 사이에 형성함으로써 금속 전극에 의한 반사를 최소화하고, 형광막에 주입되는 전자의 효율을 증대시킬 수 있는 방법이 소개되었다. Among these techniques are, for example, the conventional structure and in the OLED display of the discharge structure, between the similar diamond carbon thin film of the low-reflectivity metal electrode film and the insulating film, an insulating film and a fluorescent film, or between a metal conductive film and a fluorescent film formed by this method has been introduced to minimize the reflection by the metal electrode, and increasing the efficiency of electron to be injected into the phosphor film.

그러나 상술한 바와 같이 반사를 방지하기 위해 반사 방지막을 삽입할 경우, 금속 박막으로 부터 반사를 막아주어 외부의 강한 광원하에서도 선명한 상을 볼 수 있으나, 외부의 광원이 없을 경우, 반사 방지막이 필요가 없는데도 불구하고 반사 방지막이 여전히 작용하여 유기 발광표시장치의 전체적인 발광 효율을 감소시키는 문제점이 있다. However, to insert an anti-reflection coating to prevent the reflection, as described above, given prevent the reflection from the thin metal film under an external strong light source also, but can see a clear image, the absence of an external light source, the required anti-reflection coating even though there is a problem that though the anti-reflection film is still acts to reduce the overall light emission efficiency of the OLED display.

따라서, 본 발명은 전술한 종래의 문제점들을 해소하기 위해 도출된 발명으로, 기판 하부에 광변색성층을 형성함으로써 유기 발광표시장치가 어두운 곳에 노출되면 광변색성층은 투명하게 보이게 되고, 유기 발광표시장치가 빛 또는 자외선에 노출될 경우 광변색성층은 불투명한 색을 가지게됨으로써 블랙매트릭스와 같은 역할을 할 수 있는 유기 발광표시장치 및 그의 제조방법에 관한 것이다. Accordingly, the invention is when the OLED display is exposed in a dark place by forming the photochromic layer on the invention, the substrate lower derived to solve the conventional problems above-described photochromic layer is displayed transparent, organic light-emitting display device If it exposed to the light or ultraviolet light discoloration layer relates to an OLED display and a method of manufacture that can serve as a black matrix being had an opaque color.

전술한 목적을 달성하기 위하여, 본 발명의 일측면에 따르면, 본 발명의 유기 발광표시장치는 기판과, 기판 하부에 형성되는 광변색성층과, 기판 상에 형성된 적어도 하나의 투명 박막트랜지스터와, 상기 투명 박막트랜지스터 상에 형성된 평탄화층과, 상기 평탄화층의 일영역 상에 형성되며, 상기 투명 박막트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 형성된 제1 전극층과, 상기 제1 전극층 상에 형성되며, 상기 제1 전극층을 적어도 부분적으로 노출되도록 개구부가 형성된 화소정의막과, 상기 화소정의막의 일영역 및 상기 개구부 상에 형성된 발광층과, 상기 발광층 상부에 형성되는 제2 전극층을 포함한다. In order to achieve the aforementioned object, according to an aspect of the invention, the organic light emitting display device of the present invention and at least one transparent thin film transistor formed on the photochromic layer and the substrate is formed on the substrate and the substrate lower, the a planarization layer formed on the transparent thin film transistor, is formed on one region of the planarizing layer, a first electrode layer formed to be connected with one of source and drain electrodes of the transparent TFT and formed on the first electrode layer , it includes a pixel defining layer having an opening to at least partially expose the first electrode layer, and a light emitting layer formed on one region of the pixel defining layer and the opening, the second electrode layer formed in the emission layer.

바람직하게, 상기 광변색성층은 빛에 의해 가역적으로 변화하는 무기물계, 유기물계 및 글래스계 물질들 중 적어도 하나로 이루어지는 것을 특징으로 하고, 상기 광변색성층은 은(Ag) 할로겐 화합물 결정이 함유된 붕규산염(borosilicate)으로 이루어지는 것을 특징으로 하고, 상기 광변색성층은 빛 또는 자외선에 노출되면 색이 변화되는 것을 특징으로 한다. Preferably, the photochromic layer is characterized by comprising at least one of inorganic-based, organic-based and glass-based material that reversibly changes by light in one and the photochromic layer is silver (Ag) a boron-containing this crystal halides When the formed of a silicate (borosilicate), characterized, and the photochromic layer is exposed to light or ultraviolet light it is characterized in that the color is changed. 또한 상기 제1 전극층과 상기 제2 전극층은 투명전극인 것을 특징으로 한다. In addition, the second electrode layer and the first electrode layer is characterized in that the transparent electrode. 또한, 상기 발광층은 양면 발광인 것을 특징으로 한다. Further, the light-emitting layer is characterized in that both-side emission.

본 발명의 다른 측면에 따르면, 본 발명의 유기 발광표시장치의 제조방법은 기판 하부에 광변색성층을 형성하는 단계와, 상기 기판 상에 적어도 하나의 투명 박막트랜지스터를 형성하는 단계와, 상기 투명 박막트랜지스터 상에 평탄화층을 형성하는 단계와, 상기 평탄화층의 일영역 상에 형성되며, 상기 박막트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 제1 전극층을 형성하는 단계와, 상기 제1 전극층 상에 형성되며, 상기 제1 전극층의 일영역이 부분적으로 노출되도록 개구부를 갖는 화소정의막을 형성하는 단계와, 상기 화소정의막의 일영역 및 상기 개구부 상에 발광층을 형성하는 단계와, 상기 발광층과 상기 화소정의막 상에 제2 전극층을 형성하는 단계를 포함한다. According to another aspect of the invention, the method of manufacturing the OLED display of the present invention includes the steps of forming at least one transparent thin film transistor on the stage and, on the substrate to form a photochromic layer to the substrate a lower portion, wherein the transparent film forming a planarization layer on the transistors, is formed on one region of the planarizing layer, and forming a first electrode layer to be connected with one of source and drain electrodes of the thin film transistor, wherein the first electrode layer is formed in said first forming a pixel defining layer having an opening yi one region of the first electrode layer to be partially exposed, and forming a pixel defining layer one area and a light emitting layer on the aperture, the emission layer and the pixel and forming a second electrode layer on defining layer.

바람직하게, 상기 광변색성층은 졸젤(Sol-gel)공정을 이용하여 형성되는 것을 특징으로 한다. Preferably, the photochromic layer may be formed using a joljel (Sol-gel) process.

이하에서는, 본 발명의 실시예들을 도시한 도면을 참조하여, 본 발명을 보다 구체적으로 설명한다. In the following, with reference to the illustrated embodiments of the invention and the drawings, the present invention will be described in detail.

도 1은 본 발명에 따른 유기 발광표시장치의 개략적인 단면도이다. 1 is a schematic cross-sectional view of the OLED display according to the present invention.

도 1을 참고하면, 유기 발광표시장치(10)는 상기 기판(100)과, 상기 기판(100) 하부에 형성되는 광변색성층(110)과, 상기 기판(100) 상에 형성되는 버퍼층(120)과, 상기 버퍼층(120) 상에 형성되는 투명 박막트랜지스터(130)와, 상기 투명 박막트랜지스터(130)상에 형성되는 평탄화층(140)과, 상기 평탄화층(140)의 일영역 상에 형성되며, 상기 투명 박막트랜지스터(130)의 소스 및 드레인 전극(135a,135b) 중 어느 하나와 연결되도록 형성된 제1 전극층(150)과, 상기 제1 전극층(150) 상에 형성되며, 상기 제1 전극층(150)을 적어도 부분적으로 노출되도록 개구부(180)가 형성된 화소정의막(160)과, 상기 화소정의막(160)의 일영역 및 상기 개구부(180) 상에 형성된 발광층(170)과, 상기 발광층(170) 상부에 형성되는 제2 전극층(190)을 포함한다. Referring to Figure 1, the OLED display 10 includes a buffer layer (120 is formed on the substrate 100, a photochromic layer 110, the substrate 100 is formed in the lower portion of the substrate 100 ) and, formed on one region of the transparent thin film transistor 130, a planarization layer 140 and the planarization layer 140 is formed on the transparent TFT 130 is formed on the buffer layer 120 and, a first electrode layer 150 is formed to be connected with one of source and drain electrodes (135a, 135b) of the transparent TFT 130 is formed on the first electrode layer 150, the first electrode 150 a and at least in part, so that the opening 180 is the pixel defining layer 160 and the light emitting layer 170 is formed on one region and the opening 180 of the pixel defining layer 160 is formed of exposure, the light-emitting layer 170, a second electrode layer 190 is formed on top.

상기 기판(100)은 일례로 유리, 플라스틱, 실리콘 또는 합성수지와 같은 절연성을 띠는 재질로 이루어질 수 있으며, 유리 기판과 같은 투명 기판이 바람직하다. The substrate 100 may be formed as a strip, an insulating material such as glass, plastic, silicon or synthetic resin material for example, a transparent substrate such as a glass substrate.

상기 광변색성층(110)은 상기 기판(100) 하부에 형성되며, 상기 광변색성층은 빛에 의해 가역적으로 변화하는 무기물계, 유기물계 및 글래스계 물질들 중 적어도 하나로 이루어지며, 특히, 은(Ag) 할로겐 화합물 결정이 함유된 붕규산염(borosilicate)으로 이루어지는 것이 바람직하다. The photochromic layer 110 is formed of at least one of inorganic-based, organic-based and glass-based material that reversibly changes by being formed on a lower substrate (100), the photochromic layer is a light one, in particular, the ( Ag) is preferably made of borosilicate (borosilicate) containing a crystal compounds. 상기 광변색성층(110)은 빛 또는 자외선에 노출될 경우, 은(Ag) 또는 할로겐 화합물 결정의 Cl - 이온이 전자에 방출되어, 방출된 전자가 Ag + 을 환원시켜 중성상태의 Ag 및 Cl로 변화된다. If exposed the photochromic layer 110 to light or UV rays, silver (Ag) or a halogen compound crystals Cl - are ions are released into the electronics, by the emitted electrons is reduced to Ag + as Ag and Cl in the neutral state It is changed. 이에 따라, 상기 광변색성층(110)은 불투명한 색을 가짐으로써, 블랙매트릭스(Black Matrix)와 같은 역할을 할 수 있다. Accordingly, the photochromic layer 110 may act as by having a non-transparent color, a black matrix (Black Matrix).

상기 버퍼층(110)은 상기 기판(100) 상에 형성되며, 질화막, 산화막 또는 투명 절연성 재료 등으로 형성되며, 이들에 제한되지는 않는다. The buffer layer 110 is not formed on the substrate 100, it is formed of a nitride film, an oxide film or a transparent insulating material such as, limited to these.

상기 투명 박막트랜지스터(130)는 상기 버퍼층(120) 상에 형성된다. The transparent TFT 130 is formed on the buffer layer 120.

이하에서는, 상기 투명 박막트랜지스터(130)을 보다 구체적으로 설명한다. Hereinafter will be described the transparent TFT 130 in more detail.

상기 투명 박막트랜지스터(130)의 투명 반도체층(131)은 상기 버퍼층(120) 상에 소정의 패턴으로 형성된다. A transparent semiconductor layer 131 of the transparent TFT 130 is formed in a predetermined pattern on the buffer layer 120. 상기 투명 반도체층(131)은 밴드갭이 3.0eV 이상인 광대역 반도체(wide band gap) 물질의 ZnO, ZnSnO, GaSnO, GaN, SiC 중 선택된 적어도 하나의 도전성 금속 재료로 이루어질 수 있다. The transparent semiconductor layer 131 may be formed of at least one conductive metal material selected from ZnO, ZnSnO, GaSnO, GaN, SiC or more of the broadband semiconductor band gap 3.0eV (wide band gap) material.

상기 투명 박막트랜지스터(130)의 게이트 절연층(132)은 상기 투명 반도체층(131) 상에 형성되며, 상기 반도체층(131)과 상기 소스/드레인 전극(135a,135b)을 절연한다. A gate insulating layer 132 of the transparent TFT 130 is formed on the transparent semiconductor layer 131, to insulate the semiconductor layer 131 and the source / drain electrodes (135a, 135b). 상기 게이트 절연층(132)은 산화막, 질화막 또는 투명 절연성 재료 등으로 형성되며, 이들에 제한되지는 않는다. The gate insulating layer 132 is formed of an oxide film, nitride film or a transparent insulating material such as, but is not limited to these.

상기 투명 박막트랜지스터(130)의 게이트 전극(133)은 상기 게이트 절연층(132) 상에 형성되며, 상기 게이트 전극(133)은 상기 투명 반도체층(131)의 채널 영역(미도시)의 상부에 소정의 패턴으로 형성된다. The transparent gate electrode 133 of the thin film transistor 130 is formed on the gate insulating layer 132, the gate electrode 133 is on top of the channel region (not shown) of the transparent semiconductor layer 131 It is formed in a predetermined pattern. 상기 게이트 전극(131)은 투명성을 띄는 ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 등으로 형성될 수 있으며, 이들에 제한되지는 않는다. The gate electrode 131 may be formed by striking the transparent ITO (indium tin oxide), IZO (indium zinc oxide), ITZO (indium zinc oxide), ICO (Indium Cesium Oxide) or semi-metal such as, limited to It is not.

상기 투명 박막트랜지스터(130)의 층간 절연층(134)은 상기 게이트 전극(133) 상에 형성되며, 여기서, 상기 층간 절연층(134)의 절연물질은 상기 게이트 절연층(132)과 동일한 물질로 형성될 수 있다. An interlayer insulating layer 134 of the transparent TFT 130 is formed on the gate electrode (133), wherein the insulating material of the interlayer insulating layer 134 is of the same material as the gate insulating layer 132 It can be formed.

상기 투명 박막트랜지스터(130)의 소스/드레인 전극(135a,135b)은 상기 층간 절연층(134) 상에 형성되며, 상기 게이트 절연층(132)과 상기 층간 절연층(134)에 형성된 콘택트 홀을 통하여 상기 투명 반도체층(131)의 양측에 각각 전기적으로 연 결되도록 형성된다. Source / drain electrodes of the transparent TFT (130) (135a, 135b) has a contact hole formed in is formed on the interlayer insulating layer 134, the gate insulating layer 132 and the interlayer insulating layer 134 each through the both sides of the transparent semiconductor layer 131 is formed so as to be electrically connected. 여기서, 상기 소스/드레인 전극(135a,135b)은 전도성과 투명성이 양호한 금속, 예컨대 형성되며, ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 등으로 형성될 수 있으며, 이들에 제한되지는 않는다. Here, the source / drain electrodes (135a, 135b) is a metal the conductivity and transparency is good, for example, is formed, ITO (indium tin oxide), IZO (indium zinc oxide), ITZO (indium zinc oxide), ICO (Indium Cesium Oxide ) or it may be formed in a semi-transparent metal such as, but is not limited to these.

상기 평탄화층(140)은 상기 투명 박막트랜지스터(130) 상에 형성되며, 질화막, 산화막 또는 투명 절연성 재료 등으로 형성되며, 이들에 제한되지는 않는다. The planarization layer 140 is not formed on the transparent TFT 130 is formed by a nitride film, an oxide film or a transparent insulating material such as, limited to these. 상기 평탄화층(140) 상에는 상기 평탄화층(140)의 일영역을 식각하여 형성된 비어홀(151a)을 형성한다. Formed on the planarization layer 140 to form a via hole (151a) formed by etching one region of the planarization layer 140.

상기 제1 전극층(150)은 상기 평탄화층(140) 상에 형성된 비아홀(151a)을 통해 상기 소스 및 드레인 전극(135a, 135b) 중 어느 하나와 전기적으로 연결된다. The first electrode layer 150 is electrically connected to any one of the source and drain electrodes (135a, 135b) through a via hole (151a) formed on the planarization layer 140. The

상기 화소정의막(160)은 상기 제1 전극층(150) 상에 형성되며, 상기 제1 전극층(150)을 적어도 부분적으로 노출시키는 개구부(180)를 형성한다. The pixel defining layer 160 is formed an opening 180 that is formed on the first electrode layer 150, at least partially expose the first electrode layer 150.

상기 발광층(170)은 상기 화소정의막(160)의 일영역 및 상기 개구부(180) 상에 형성되며, 상기 발광층(170)은 정공 주입층, 정공수송층, 전자수송층 및 전자 주입층 중 일부를 더 포함할 수 있다. The light-emitting layer 170 is formed on one region and the opening 180 of the pixel defining layer 160, the emission layer 170, a hole injection layer, a hole transport layer, a part of the electron transport layer and an electron injection layer more It can be included. 이러한 상기 발광층(170)은 상기 제1 전극(150)과 상기 제2 전극층(190)으로 부터 주입된 정공 및 전자가 결합하면서 빛을 발생한다. Such the light-emitting layer 170 generates light while coupling the holes and electrons injected from the first electrode 150 and the second electrode layer (190).

상기 제2 전극층(190)은 상기 발광층(170)과 상기 화소정의막(160) 상에 형성된다. The second electrode layer 190 is formed on the light emitting layer 170 and the pixel defining layer (160). 여기서, 상기 제2 전극층(190)은 상기 제1 전극층(150)과 동일한 금속으로 형성될 수 있다. Here, the second electrode layer 190 may be formed of the same metal as the first electrode layer 150.

또한, 도 2a 내지 도 2c는 본 발명에 따른 유기 발광표시장치의 제조방법의 공정 순서도이다. Further, Figures 2a to 2c is a process flow diagram of a method of manufacturing an organic light emitting display device according to the present invention.

먼저, 도 2a에 도시된 바와 같이, 상기 기판(100) 하부에 상기 광변색성층(110)을 소정 두께로 형성한다. First, to form a, the substrate 100, the lower the photochromic layer 110, as shown in Figure 2a to a desired thickness.

보다 상세하게는, 상기 광변색성층(110)은 빛에 의해 가역적으로 변화하는 무기물계, 유기물계 및 글래스계의 물질들 중 선택된 적어도 하나의 광색성 물질로 이루어지며, 예컨대 투명한 SiO 2 , AI 2 0 3 , TiO 2 , ormosils와 같은 재료를 졸젤법(Sol-gel)으로 형성한 후 유기 광색성 특성을 보이는 도펀트를 다공성 공간에 침투시켜 형성한다. More specifically, the photochromic layer (110) is formed of at least one photochromic material selected one of the material of the inorganic-based, organic-based and glass-based, which reversibly changes by light, for example, a transparent SiO 2, AI 2 03, after forming a material, such as TiO 2, ormosils by a sol gel method (sol-gel) is formed to penetrate the organic dopant exhibit photochromic properties to the porous space. 여기서, 졸젤법은 SiO 2 와 같은 유기 분자들을 낮은 온도에서 분자 구조에 열적 손실이 가지 않는 가장 효과적인 방법이다. Here, the sol-gel method is the most effective way that the thermal loss of the molecular structure of organic molecules, such as SiO 2 at a lower temperature.

상기 광색성 물질을 기판 하부에 도포하는 방법은 스핀 코팅, 딥 코팅 또는 스프레이 코팅 등과 같은 박막코팅 분야에서 사용되는 통상의 코팅방법들 중 임의의 방법을 따를 수 있다. The method for applying the photochromic material to the substrate bottom may be in accordance with any method of the conventional coating methods used in thin film coating field, such as spin coating, dip coating or spray coating.

상기 광변색성층(110)은 빛 또는 자외선에 노출될 경우 빛을 흡수함으로써 분자구조가 바뀌면서 색을 가지게 되며, 반대로 빛이 약해지거나 실내 및 광원이 없을 때는 다시 투명성(transparent)을 가지게 된다. The photochromic layer 110 by absorbing light when exposed to light or ultraviolet light and have a color bakkwimyeonseo the molecular structure, is opposed to the back have transparency (transparent) or the absence of light is weakened and a light source indoors. 따라서, 상기 광변색성층(110)이 빛 또는 자외선에 노출될 경우, 블랙매트릭스(Black Matrix)와 같은 역할을 하게되고, 상기 광변색성층(110)이 어두운 곳에 노출될 경우, 상기 광변색성층(110)은 투명하게 보이게 된다. Accordingly, the photochromic layer (110) when exposed to light or UV rays, and to act as a black matrix (Black Matrix) The photochromic If layer 110 is exposed in the dark, and the photochromic layer ( 110) is displayed transparent.

상기 기판(100) 상에는 버퍼층(120)이 형성된다. The buffer layer 120 on the substrate 100 are formed. 상기 버퍼층(120)은 질화막, 산화막 또는 투명 절연성 재료 중에서 선택된 적어도 하나를 예켄대, PECED(Plasma Enhanced Chemical Vapor Deposition)법에 의해 대략 3000Å정도의 두께로 도포한다. The buffer layer 120 is deposited to a thickness of approximately 3000Å ​​extent by the nitride film, an oxide film or a transparent insulating material for at least one selected from kendae, PECED (Plasma Enhanced Chemical Vapor Deposition) method.

이어서, 도 2b에 도시된 바와 같이, 상기 투명 박막트랜지스터(130)는 버퍼층 상에 형성된다. Then, the, the transparent TFT 130 as shown in Figure 2b is formed on the buffer layer.

상기 투명 박막트랜지스터(130)의 투명 반도체층(131)은 상기 버퍼층(120) 상에 소정의 패턴으로 형성된다. A transparent semiconductor layer 131 of the transparent TFT 130 is formed in a predetermined pattern on the buffer layer 120. 상기 투명 반도체층(131)은 밴드갭이 3.0eV 이상인 광대역 반도체(wide band gap) 물질의 ZnO, ZnSnO, GaSnO, GaN, SiC 중 선택된 적어도 하나의 도전성 금속 재료로 형성된다. The transparent semiconductor layer 131 is formed of at least one conductive metal material selected from a broadband semiconductor (wide band gap), ZnO, ZnSnO, GaSnO, GaN, SiC material of not less than the band gap 3.0eV. 상기 투명 반도체층(131)은, 투명성을 띠는 물질을 CVD(Chemical Vapor Deposition)에 의해 대략 300Å~2000Å 정도의 두께로 도포한 뒤, 이를 소정 형상, 예컨대 섬모양 형상으로 패터닝 한다. The transparent semiconductor layer 131, the transparent strip is then coated with a material thickness of about 300Å ~ 2000Å extent by the (Chemical Vapor Deposition), CVD, and patterned to a predetermined shape, for example, the island-like shape. 이때, 상기 투명 반도체층(131)의 패터닝은, 포토레지스트(PR)의 도포, 노광 및 현상에 의한 식각 마스크를 이용하여 수행될 수 있다. At this time, the patterning of the transparent semiconductor layer 131, may be performed using an etch mask by applying, exposing and developing the photoresist (PR).

여기서 상기 투명 반도체층(131)은 투명성을 띠는 물질을 도포함으로써 개구율을 향상시켜 설계시 필요한 기본 데이터 값을 완화할 수 있다. Wherein the transparent semiconductor layer 131 to improve the aperture ratio by applying a material strip, the transparency may mitigate the basic data values ​​required during designing.

전술한 실시 예에서 상기 투명 반도체층(131)을 성막하는 방법으로는 CVD(Chemical Vapor Deposition)에 대해 개시되어 있으나, PLD(Pulse Laser deposition), ALD(Atomic Layer Deposition), 스퍼터 및 MBE(Molecular Beam Epixtaxy) 중 어느 한 방법을 이용할 수 있음은 물론이다. In the embodiment described above by the method for forming the transparent semiconductor layer 131, but is described for the (Chemical Vapor Deposition), CVD, PLD (Pulse Laser deposition), ALD (Atomic Layer Deposition), sputtering and MBE (Molecular Beam Epixtaxy) you may use any one of the methods is, of course.

이어서 상기 투명 박막트랜지스터(130)의 게이트 절연층(132)을 상기 투명 반도체층(131) 상에 형성하게 된다. Then to form the gate insulating layer 132 of the transparent TFT 130 on the transparent semiconductor layer 131. 상기 게이트 절연층(132)은 산화막, 질화막 또는 투명 절연성 재료를 PECVD(Plasma Enhanced Chemical Vapor Deposition)법으로 대략 700Å~1000Å 정도의 두께로 도포한다. The gate insulating layer 132 is coated with an oxide film, nitride film or a transparent insulating material by PECVD (Plasma Enhanced Chemical Vapor Deposition) method about 700Å ~ 1000Å thickness of approximately.

상기 투명 박막트랜지스터(130)의 게이트 전극(133)은 상기 게이트 절연층(132) 상에 형성한다. A gate electrode 133 of the transparent TFT 130 is formed on the gate insulating layer 132. The 구체적으로, 상기 게이트 절연층(132) 상에 투명성을 띠는 도전성 금속, 예컨대 ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 중 하나를 스퍼터링에 의해 대략 2000Å~3000Å 정도의 두께로 증착한 뒤, 이를 소정형상으로 패터닝한다. Specifically, the strip-transparency on the gate insulating layer 132 is a conductive metal, such as ITO (indium tin oxide), IZO (indium zinc oxide), ITZO (indium zinc oxide), ICO (Indium Cesium Oxide) or semi-metal of after approximately 2000Å ~ 3000Å ​​degree deposited to a thickness of one by sputtering, and patterned to a predetermined shape.

상기 투명 박막트랜지스터(130)의 층간 절연층(134)는 상기 게이트 전극(130)을 포함한 상기 게이트 절연층(132) 상에 형성한다. An interlayer insulating layer of the transparent TFT 130, 134 formed on the gate insulating layer 132 including the gate electrode 130. 상기 층간 절연층(134)은 상기 게이트 절연층(132)의 형성 방법과 동일한 방법으로 형성될 수 있다. The interlayer insulating layer 134 may be formed in the same manner as the formation method of the gate insulating layer 132.

그 다음, 상기 투명 박막트랜지스터(130)의 소스/드레인 전극(135a,135b)은 상기 층간 절연층(134) 상에 형성되며, 상기 게이트 절연층(132)과 상기 층간 절연층(134)에 형성된 콘택 홀을 통하여 상기 투명 반도체층(131)의 양측에 각각 전기적으로 연결되도록 형성된다. Then, the source / drain electrodes (135a, 135b) of the transparent TFT 130 is formed on the interlayer insulating layer 134, formed on the gate insulating layer 132 and the interlayer insulating layer 134 It is formed so as to be through the contact holes, each electrically connected to both sides of the transparent semiconductor layer 131. 상기 투명 반도체층(130) 상에 형성된 소스/드레인 전극(135a,135b)은 금속층 상부에 포토레지스트를 도포한 후 소정 형태로 패터닝 하여 형성한다. The transparent source / drain electrode formed on the semiconductor layer (130) (135a, 135b) are formed after applying a photoresist to the upper metal layer is patterned into a predetermined shape. 여기서, 상기 소스/드레인 전극(135a,135b)은 전도성과 투명성이 양호한 금속, 예컨대 형성되며, ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 등으로 형성될 수 있으며, 이들에 제한되지는 않는다. Here, the source / drain electrodes (135a, 135b) is a metal the conductivity and transparency is good, for example, is formed, ITO (indium tin oxide), IZO (indium zinc oxide), ITZO (indium zinc oxide), ICO (Indium Cesium Oxide ) or it may be formed in a semi-transparent metal such as, but is not limited to these.

이어서, 도 2c에 도시된 바와 같이, 상기 평탄화층(140)은 상기 투명 박막트랜지스터(130) 상에 형성된다. Then, the, the planarization layer 140 as shown in Figure 2c is formed on the transparent TFT 130.

상기 제1 전극(150)은 상기 평탄화층(140)의 일영역을 에칭하여 상기 소스 및 드레인 전극(135a,135b) 중 어느 하나가 노출되도록 형성된 비어홀(151a)을 통해, 상기 소스 및 드레인 전극(135a,135b) 중 어느 하나와 전기적으로 연결된다. The first electrode 150 is the flattened by etching one region of the layer 140 through the via hole (151a) formed such that any of the exposure of the source and drain electrodes (135a, 135b), the source and drain electrodes ( 135a, 135b) and either a are electrically connected.

상기 화소정의막(160)은 상기 제1 전극층(150) 상에 형성되며, 상기 평탄화층(140) 상에 상기 제1 전극층(150)을 적어도 부분적으로 노출시키는 개구부(180)가 형성되며, 상기 화소정의막(160)은 500Å 내지 3000Å의 범위 두께로 형성된다. The pixel defining layer 160 is formed on the first electrode layer 150, is formed with an opening 180 exposing the first electrode layer 150 on the planarization layer 140, at least in part, the the pixel defining layer 160 is formed to a thickness in the range 500Å to 3000Å.

상기 발광층(170)은 상기 화소정의막(160)의 일영역 및 개구부(180) 상에 형성된다. The light-emitting layer 170 is formed on one region and the openings 180 of the pixel defining layer (160). 상기 발광층(150)은 정공주입층, 정공수송층, 발광층, 정공억제층, 전자수송층, 전자주입층 중 적어도 하나의 단층막 또는 복수의 다층막으로 구성될 수 있다. The light-emitting layer 150 can be composed of a hole injection layer, a hole transport layer, an emission layer, a hole blocking layer, an electron transport layer, at least one single-layer film or a plurality of multi-layer film of the electron injection layer.

상기 제2 전극층(190)은 상기 발광층(170) 상부에 형성된다. The second electrode layer 190 is formed above the light-emitting layer 170. The 이러한 구조의 유기발광소자는 다음과 같은 발광원리에 의해 발광한다. The organic light emitting device having such a structure emits light by the following emission principle. 일단, 상기 제1 전극층(150)으로부터 주입된 정공과 상기 제2 전극층(190)으로부터 발생된 정공이 발광층(170)에서 결합하여 여기자를 생성하고, 이 여기자가 여기상태에서 기저상태로 변화됨에 따라, 발광층의 형광성 분자가 발광한다. Once, the first and the holes generated from the positive holes and the second electrode layer 190 is injected from the first electrode layer 150 to combine in the light-emitting layer 170 generates an exciton, as the exciton byeonhwadoem from an excited state to a ground state emits a fluorescent molecule of the emission layer.

이상 본 발명을 상세히 설명하였으나 본 발명은 이에 한정되지 않으며, 본 발명이 속하는 기술적 사상 내에서 당 분야의 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 물론이다. Above been described in detail and the present invention, the present invention is not limited to this, and various modifications are possible, as well as by those skilled in the art within the technical concept to which this invention belongs.

이상과 같이, 본 발명에 의하면, 유기 발광표시장치의 기판 하부에 광변색성층을 형성함으로써, 유기 발광표시장치가 어두운 곳에 노출되면 광변색성층은 투명하게 보이게 되고, 유기 발광표시장치가 빛 또는 자외선에 노출될 경우 광변색성층은 불투명한 색을 가지게됨으로써 블랙매트릭스와 같은 역할을 할 수 있다. As described above, according to the present invention, by forming a photochromic layer to the substrate a lower portion of the OLED display, when the OLED display is exposed in a dark place photochromic layer is displayed transparent, the OLED display is light or ultraviolet by photochromic layer is to have an opaque color when exposed to may serve as a black matrix. 또한, 화상표시장치 및 다양한 디스플레이 분야에서 폭넓게 응용될 수 있을 것이다. In the image display apparatus, and it will be widely applied in a variety of display applications.

Claims (8)

  1. 기판과, A substrate,
    기판 하부에 형성되는 광변색성층과, And a photochromic layer formed on the lower substrate,
    기판 상에 형성된 적어도 하나의 투명 박막트랜지스터와, And at least one transparent thin film transistor formed on a substrate,
    상기 투명 박막트랜지스터 상에 형성된 평탄화층과, And a flattening layer formed on the transparent thin film transistor,
    상기 평탄화층의 일영역 상에 형성되며, 상기 투명 박막트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 형성된 제1 전극층과, A first electrode layer formed to be connected is formed on one region of the planarization layer, and any one of the source and drain electrodes of the transparent TFT and,
    상기 제1 전극층 상에 형성되며, 상기 제1 전극층을 적어도 부분적으로 노출되도록 개구부가 형성된 화소정의막과, The second is formed on the first electrode layer, and a pixel defining layer with an opening so as to expose the first electrode layer at least partially formed,
    상기 화소정의막의 일영역 및 상기 개구부 상에 형성된 발광층과, One region of the pixel defining layer and the light emitting layer formed on the opening and,
    상기 발광층 상부에 형성되는 제2 전극층을 포함하는 것을 특징으로 하는 유기 발광표시장치. The organic light emitting display device comprises a second electrode layer formed in the emission layer.
  2. 제1 항에 있어서, 상기 광변색성층은 빛에 의해 가역적으로 변화하는 무기물계, 유기물계 및 글래스계 물질들 중 적어도 하나로 이루어지는 것을 특징으로 하는 유기 발광표시장치. According to claim 1, wherein said photochromic layer is an organic light emitting display device according to at least one characterized in that formed of the inorganic material-based, organic-based and glass-based material that reversibly changes by light.
  3. 제2 항에 있어서, 상기 광변색성층은 은(Ag) 할로겐 화합물 결정이 함유된 붕규산염(borosilicate)으로 이루어지는 것을 특징으로 하는 유기 발광표시장치. The method of claim 2, wherein said photochromic layer is a silver (Ag) organic light emitting display which comprises a borosilicate (borosilicate) containing a crystal compounds.
  4. 제1 항에 있어서, 상기 광변색성층은 빛 또는 자외선에 노출되면 색이 변화되는 것을 특징으로 하는 유기 발광표시장치. According to claim 1, wherein said photochromic layer is an organic light emitting display device characterized in that the color changes when exposed to light or UV light.
  5. 제1 항에 있어서, 상기 제1 전극층과 상기 제2 전극층은 투명전극인 것을 특징으로 하는 유기 발광표시장치. The method of claim 1, wherein the first electrode and the second electrode layer is an organic light emitting diode display, characterized in that the transparent electrode.
  6. 제1 항에 있어서, 상기 발광층은 양면 발광인 것을 특징으로 하는 유기 발광표시장치. The method of claim 1, wherein the light emitting layer is an organic light emitting diode display, characterized in that both-side emission.
  7. 기판 하부에 광변색성층을 형성하는 단계와; And forming the photochromic layer on the lower substrate;
    상기 기판 상에 적어도 하나의 투명 박막트랜지스터를 형성하는 단계와; Forming at least one transparent thin film transistor on the substrate;
    상기 투명 박막트랜지스터 상에 평탄화층을 형성하는 단계와; Forming a planarization layer on the transparent thin film transistor;
    상기 평탄화층의 일영역 상에 형성되며, 상기 박막 트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 제1 전극층을 형성하는 단계와; It is formed on one region of the planarizing layer, and forming a first electrode layer to be connected with one of source and drain electrodes of the thin film transistor;
    상기 제1 전극층 상에 형성되며, 상기 제1 전극층의 일영역이 부분적으로 노출되도록 개구부를 갖는 화소정의막을 형성하는 단계와; The method comprising forming a pixel defining layer having the first electrode layer is formed on the first opening such that the one region of the first electrode layer and partially exposed;
    상기 화소정의막의 일영역 및 상기 개구부 상에 발광층을 형성하는 단계와; One region of the pixel defining layer, and forming a light emitting layer on said opening;
    상기 발광층과 상기 화소정의막 상에 제2 전극층을 형성하는 단계를 포함하는 것을 특징으로 하는 유기 발광표시장치의 제조방법. The method for manufacturing a light-emitting layer and the organic light emitting display device comprising the step of forming a second electrode layer on the pixel defining layer.
  8. 제7 항에 있어서, 상기 광변색성층은 졸젤(Sol-gel)공정을 이용하여 형성되는 것을 특징으로 하는 유기 발광표시장치의 제조방법.. Claim 7, wherein said photochromic layer is joljel (Sol-gel) method of manufacturing an organic light emitting diode display, characterized in that formed using the process in.
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