KR100711890B1 - Organic Light Emitting Display and Fabrication Method for the same - Google Patents
Organic Light Emitting Display and Fabrication Method for the same Download PDFInfo
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- KR100711890B1 KR100711890B1 KR1020050069173A KR20050069173A KR100711890B1 KR 100711890 B1 KR100711890 B1 KR 100711890B1 KR 1020050069173 A KR1020050069173 A KR 1020050069173A KR 20050069173 A KR20050069173 A KR 20050069173A KR 100711890 B1 KR100711890 B1 KR 100711890B1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
본 발명은 유기 발광표시장치 및 그의 제조방법에 관한 것이다. The present invention relates to an organic light emitting display device and a manufacturing method thereof.
본 발명의 유기 발광표시장치는 기판과, 기판 하부에 형성되는 광변색성층과, 기판 상에 형성된 적어도 하나의 투명 박막트랜지스터와, 상기 투명 박막트랜지스터 상에 형성된 평탄화층과, 상기 평탄화층의 일영역 상에 형성되며, 상기 투명 박막트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 형성된 제1 전극층과, 상기 제1 전극층 상에 형성되며, 상기 제1 전극층을 적어도 부분적으로 노출되도록 개구부가 형성된 화소정의막과, 상기 화소정의막의 일영역 및 상기 개구부 상에 형성된 발광층과, 상기 발광층 상부에 형성되는 제2 전극층을 포함한다.An organic light emitting display device according to an embodiment of the present invention includes a substrate, a photochromic layer formed under the substrate, at least one transparent thin film transistor formed on the substrate, a planarization layer formed on the transparent thin film transistor, and one region of the planarization layer. A first electrode layer formed on the first electrode layer, the first electrode layer formed to be connected to any one of the source and drain electrodes of the transparent thin film transistor, and an opening formed on the first electrode layer and at least partially exposing the first electrode layer. And a light emitting layer formed on one region and the opening of the pixel definition layer, and a second electrode layer formed on the light emitting layer.
광변색성층, 투명 박막트랜지스터 Photochromic Layer, Transparent Thin Film Transistor
Description
도 1은 본 발명에 따른 유기 발광표시장치의 개략적인 단면도이다.1 is a schematic cross-sectional view of an organic light emitting diode display according to the present invention.
도 2a 내지 도 2c는 본 발명에 따른 유기 발광표시장치의 제조방법의 공정 순서도이다. 2A to 2C are flowcharts illustrating a method of manufacturing an organic light emitting display device according to the present invention.
♣ 도면의 주요 부분에 대한 부호의 설명 ♣♣ Explanation of symbols for the main parts of the drawing ♣
100 : 기판 110 : 광변색성층 100
120: 버퍼층 130 : 박막트랜지스터 120: buffer layer 130: thin film transistor
140: 평탄화층 150 : 제1 전극층 140: planarization layer 150: first electrode layer
160 : 화소정의막 170: 발광층 160: pixel defining layer 170: light emitting layer
180 : 개구부 190 : 제2 전극층 180: opening 190: second electrode layer
본 발명은 유기 발광표시장치 및 그의 제조방법에 관한 것으로, 보다 구체적으로 유기 발광표시장치의 기판 하부에 광변색성층을 형성함으로써, 유기 발광표시장치가 어두운 곳에 노출되면 광변색성층은 투명하게 보이게 되고, 유기 발광표시장치가 빛 또는 자외선에 노출될 경우 광변색성층은 불투명한 색을 가지게됨으로써 블랙매트릭스와 같은 역할을 할 수 있는 유기 발광표시장치 및 그의 제조방법에 관한 것이다. The present invention relates to an organic light emitting display device and a method of manufacturing the same. More specifically, by forming a photochromic layer under a substrate of the organic light emitting display device, the photochromic layer becomes transparent when the organic light emitting display device is exposed to a dark place. When the organic light emitting display is exposed to light or ultraviolet rays, the photochromic layer has an opaque color, and thus, the organic light emitting display device and the manufacturing method thereof may serve as a black matrix.
유기 발광표시장치는 비교적 균일하며 평탄한 박막들로 이루어져 있다. 또한, 유기 발광표시장치는 빛이 발광되는 측의 전극이 투명한 전도성 박막으로 형성되고, 반대편의 전극은 주로 알루미늄이나 내화금속과 같은 금속으로 형성되어 있다. 그런데, 이러한 금속박막들은 반사율이 매우 커서 외부 광원으로부터의 강한 빛(태양광선을 비록한 강한 광원으로부터의 빛)이 직접 입사할 경우 화면의 선명도가 크게 저하되는 문제가 있다.The organic light emitting diode display is made of a relatively uniform and flat thin film. In addition, in the organic light emitting diode display, an electrode on the side from which light is emitted is formed of a transparent conductive thin film, and an electrode on the opposite side is mainly formed of a metal such as aluminum or refractory metal. However, these metal thin films have a large reflectance, which causes a problem that the sharpness of the screen is greatly deteriorated when strong light from the external light source (light from the strong light source even though sunlight is incident) is directly incident.
따라서, 이와 같은 외광 반사에 의한 시인성의 저하를 막기 위해 일반적으로 디스플레이 표면이나 디스플레이 내부에 반사 방지막을 성막하는 방법이 있다. 이러한 기술은 예를 들면, 통상적인 구조 및 방전된 구조의 유기 발광표시장치에서, 저반사율의 유사 다이아몬드 탄소 박막을 금속 전극막과 절연막 사이, 절연막과 형광막 사이 또는 금속 도전막과 형광막 사이에 형성함으로써 금속 전극에 의한 반사를 최소화하고, 형광막에 주입되는 전자의 효율을 증대시킬 수 있는 방법이 소개되었다. Therefore, in order to prevent the fall of visibility by such external light reflection, there exists a method of forming an anti-reflective film in a display surface or a display inside generally. For example, in the organic light emitting display device having a conventional structure and a discharged structure, a low-reflectance pseudo diamond carbon thin film is formed between a metal electrode film and an insulating film, between an insulating film and a fluorescent film, or between a metal conductive film and a fluorescent film. Formation has been introduced to minimize reflection by metal electrodes and increase the efficiency of electrons injected into the fluorescent film.
그러나 상술한 바와 같이 반사를 방지하기 위해 반사 방지막을 삽입할 경우, 금속 박막으로 부터 반사를 막아주어 외부의 강한 광원하에서도 선명한 상을 볼 수 있으나, 외부의 광원이 없을 경우, 반사 방지막이 필요가 없는데도 불구하고 반사 방지막이 여전히 작용하여 유기 발광표시장치의 전체적인 발광 효율을 감소시키는 문제점이 있다. However, when the anti-reflection film is inserted to prevent reflection as described above, the anti-reflection film is required to prevent the reflection from the metal thin film so that a clear image can be seen even under an external strong light source. Despite the absence of the anti-reflection film, there is still a problem in reducing the overall luminous efficiency of the organic light emitting display device.
따라서, 본 발명은 전술한 종래의 문제점들을 해소하기 위해 도출된 발명으로, 기판 하부에 광변색성층을 형성함으로써 유기 발광표시장치가 어두운 곳에 노출되면 광변색성층은 투명하게 보이게 되고, 유기 발광표시장치가 빛 또는 자외선에 노출될 경우 광변색성층은 불투명한 색을 가지게됨으로써 블랙매트릭스와 같은 역할을 할 수 있는 유기 발광표시장치 및 그의 제조방법에 관한 것이다. Accordingly, the present invention has been made to solve the above-mentioned problems. When the organic light emitting display is exposed to a dark place by forming a photochromic layer under the substrate, the photochromic layer becomes transparent. When a photochromic layer is exposed to light or ultraviolet rays, the photochromic layer has an opaque color and relates to an organic light emitting display device and a method of manufacturing the same, which can act as a black matrix.
전술한 목적을 달성하기 위하여, 본 발명의 일측면에 따르면, 본 발명의 유기 발광표시장치는 기판과, 기판 하부에 형성되는 광변색성층과, 기판 상에 형성된 적어도 하나의 투명 박막트랜지스터와, 상기 투명 박막트랜지스터 상에 형성된 평탄화층과, 상기 평탄화층의 일영역 상에 형성되며, 상기 투명 박막트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 형성된 제1 전극층과, 상기 제1 전극층 상에 형성되며, 상기 제1 전극층을 적어도 부분적으로 노출되도록 개구부가 형성된 화소정의막과, 상기 화소정의막의 일영역 및 상기 개구부 상에 형성된 발광층과, 상기 발광층 상부에 형성되는 제2 전극층을 포함한다. In order to achieve the above object, according to an aspect of the present invention, the organic light emitting display device of the present invention, a photochromic layer formed on the lower substrate, at least one transparent thin film transistor formed on the substrate, A planarization layer formed on the transparent thin film transistor, a first electrode layer formed on one region of the planarization layer, and connected to any one of a source and a drain electrode of the transparent thin film transistor, and formed on the first electrode layer. And a pixel definition layer having an opening formed to at least partially expose the first electrode layer, a light emitting layer formed on one region of the pixel definition layer and the opening, and a second electrode layer formed on the light emitting layer.
바람직하게, 상기 광변색성층은 빛에 의해 가역적으로 변화하는 무기물계, 유기물계 및 글래스계 물질들 중 적어도 하나로 이루어지는 것을 특징으로 하고, 상기 광변색성층은 은(Ag) 할로겐 화합물 결정이 함유된 붕규산염(borosilicate)으로 이루어지는 것을 특징으로 하고, 상기 광변색성층은 빛 또는 자외선에 노출되면 색이 변화되는 것을 특징으로 한다. 또한 상기 제1 전극층과 상기 제2 전극층은 투명전극인 것을 특징으로 한다. 또한, 상기 발광층은 양면 발광인 것을 특징으로 한다. Preferably, the photochromic layer is formed of at least one of inorganic, organic and glass-based materials reversibly changed by light, the photochromic layer is a boron containing silver (Ag) halogen compound crystals It is characterized by consisting of silicate (borosilicate), the photochromic layer is characterized in that the color is changed when exposed to light or ultraviolet light. In addition, the first electrode layer and the second electrode layer is characterized in that the transparent electrode. In addition, the light emitting layer is characterized in that the two-sided light emission.
본 발명의 다른 측면에 따르면, 본 발명의 유기 발광표시장치의 제조방법은 기판 하부에 광변색성층을 형성하는 단계와, 상기 기판 상에 적어도 하나의 투명 박막트랜지스터를 형성하는 단계와, 상기 투명 박막트랜지스터 상에 평탄화층을 형성하는 단계와, 상기 평탄화층의 일영역 상에 형성되며, 상기 박막트랜지스터의 소스 및 드레인 전극 중 어느 하나와 연결되도록 제1 전극층을 형성하는 단계와, 상기 제1 전극층 상에 형성되며, 상기 제1 전극층의 일영역이 부분적으로 노출되도록 개구부를 갖는 화소정의막을 형성하는 단계와, 상기 화소정의막의 일영역 및 상기 개구부 상에 발광층을 형성하는 단계와, 상기 발광층과 상기 화소정의막 상에 제2 전극층을 형성하는 단계를 포함한다. According to another aspect of the invention, the method of manufacturing an organic light emitting display device of the present invention comprises the steps of forming a photochromic layer on the lower substrate, forming at least one transparent thin film transistor on the substrate, the transparent thin film Forming a planarization layer on the transistor, forming a first electrode layer on one region of the planarization layer, and forming a first electrode layer to be connected to any one of a source and a drain electrode of the thin film transistor, and on the first electrode layer Forming a pixel defining layer having an opening so as to partially expose one region of the first electrode layer, forming a light emitting layer on one region and the opening of the pixel defining layer, the light emitting layer and the pixel Forming a second electrode layer on the defining layer.
바람직하게, 상기 광변색성층은 졸젤(Sol-gel)공정을 이용하여 형성되는 것을 특징으로 한다.Preferably, the photochromic layer is formed using a sol-gel process.
이하에서는, 본 발명의 실시예들을 도시한 도면을 참조하여, 본 발명을 보다 구체적으로 설명한다. Hereinafter, with reference to the drawings showing embodiments of the present invention, the present invention will be described in more detail.
도 1은 본 발명에 따른 유기 발광표시장치의 개략적인 단면도이다.1 is a schematic cross-sectional view of an organic light emitting diode display according to the present invention.
도 1을 참고하면, 유기 발광표시장치(10)는 상기 기판(100)과, 상기 기판(100) 하부에 형성되는 광변색성층(110)과, 상기 기판(100) 상에 형성되는 버퍼층(120)과, 상기 버퍼층(120) 상에 형성되는 투명 박막트랜지스터(130)와, 상기 투명 박막트랜지스터(130)상에 형성되는 평탄화층(140)과, 상기 평탄화층(140)의 일영역 상에 형성되며, 상기 투명 박막트랜지스터(130)의 소스 및 드레인 전극(135a,135b) 중 어느 하나와 연결되도록 형성된 제1 전극층(150)과, 상기 제1 전극층(150) 상에 형성되며, 상기 제1 전극층(150)을 적어도 부분적으로 노출되도록 개구부(180)가 형성된 화소정의막(160)과, 상기 화소정의막(160)의 일영역 및 상기 개구부(180) 상에 형성된 발광층(170)과, 상기 발광층(170) 상부에 형성되는 제2 전극층(190)을 포함한다. Referring to FIG. 1, the organic light
상기 기판(100)은 일례로 유리, 플라스틱, 실리콘 또는 합성수지와 같은 절연성을 띠는 재질로 이루어질 수 있으며, 유리 기판과 같은 투명 기판이 바람직하다.The
상기 광변색성층(110)은 상기 기판(100) 하부에 형성되며, 상기 광변색성층은 빛에 의해 가역적으로 변화하는 무기물계, 유기물계 및 글래스계 물질들 중 적어도 하나로 이루어지며, 특히, 은(Ag) 할로겐 화합물 결정이 함유된 붕규산염(borosilicate)으로 이루어지는 것이 바람직하다. 상기 광변색성층(110)은 빛 또는 자외선에 노출될 경우, 은(Ag) 또는 할로겐 화합물 결정의 Cl- 이온이 전자에 방출되어, 방출된 전자가 Ag+을 환원시켜 중성상태의 Ag 및 Cl로 변화된다. 이에 따라, 상기 광변색성층(110)은 불투명한 색을 가짐으로써, 블랙매트릭스(Black Matrix)와 같은 역할을 할 수 있다. The
상기 버퍼층(110)은 상기 기판(100) 상에 형성되며, 질화막, 산화막 또는 투명 절연성 재료 등으로 형성되며, 이들에 제한되지는 않는다. The
상기 투명 박막트랜지스터(130)는 상기 버퍼층(120) 상에 형성된다. The transparent
이하에서는, 상기 투명 박막트랜지스터(130)을 보다 구체적으로 설명한다. Hereinafter, the transparent
상기 투명 박막트랜지스터(130)의 투명 반도체층(131)은 상기 버퍼층(120) 상에 소정의 패턴으로 형성된다. 상기 투명 반도체층(131)은 밴드갭이 3.0eV 이상인 광대역 반도체(wide band gap) 물질의 ZnO, ZnSnO, GaSnO, GaN, SiC 중 선택된 적어도 하나의 도전성 금속 재료로 이루어질 수 있다. The
상기 투명 박막트랜지스터(130)의 게이트 절연층(132)은 상기 투명 반도체층(131) 상에 형성되며, 상기 반도체층(131)과 상기 소스/드레인 전극(135a,135b)을 절연한다. 상기 게이트 절연층(132)은 산화막, 질화막 또는 투명 절연성 재료 등으로 형성되며, 이들에 제한되지는 않는다. The
상기 투명 박막트랜지스터(130)의 게이트 전극(133)은 상기 게이트 절연층(132) 상에 형성되며, 상기 게이트 전극(133)은 상기 투명 반도체층(131)의 채널 영역(미도시)의 상부에 소정의 패턴으로 형성된다. 상기 게이트 전극(131)은 투명성을 띄는 ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 등으로 형성될 수 있으며, 이들에 제한되지는 않는다. The
상기 투명 박막트랜지스터(130)의 층간 절연층(134)은 상기 게이트 전극(133) 상에 형성되며, 여기서, 상기 층간 절연층(134)의 절연물질은 상기 게이트 절연층(132)과 동일한 물질로 형성될 수 있다. The
상기 투명 박막트랜지스터(130)의 소스/드레인 전극(135a,135b)은 상기 층간 절연층(134) 상에 형성되며, 상기 게이트 절연층(132)과 상기 층간 절연층(134)에 형성된 콘택트 홀을 통하여 상기 투명 반도체층(131)의 양측에 각각 전기적으로 연 결되도록 형성된다. 여기서, 상기 소스/드레인 전극(135a,135b)은 전도성과 투명성이 양호한 금속, 예컨대 형성되며, ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 등으로 형성될 수 있으며, 이들에 제한되지는 않는다.Source /
상기 평탄화층(140)은 상기 투명 박막트랜지스터(130) 상에 형성되며, 질화막, 산화막 또는 투명 절연성 재료 등으로 형성되며, 이들에 제한되지는 않는다. 상기 평탄화층(140) 상에는 상기 평탄화층(140)의 일영역을 식각하여 형성된 비어홀(151a)을 형성한다. The
상기 제1 전극층(150)은 상기 평탄화층(140) 상에 형성된 비아홀(151a)을 통해 상기 소스 및 드레인 전극(135a, 135b) 중 어느 하나와 전기적으로 연결된다.The
상기 화소정의막(160)은 상기 제1 전극층(150) 상에 형성되며, 상기 제1 전극층(150)을 적어도 부분적으로 노출시키는 개구부(180)를 형성한다. The
상기 발광층(170)은 상기 화소정의막(160)의 일영역 및 상기 개구부(180) 상에 형성되며, 상기 발광층(170)은 정공 주입층, 정공수송층, 전자수송층 및 전자 주입층 중 일부를 더 포함할 수 있다. 이러한 상기 발광층(170)은 상기 제1 전극(150)과 상기 제2 전극층(190)으로 부터 주입된 정공 및 전자가 결합하면서 빛을 발생한다. The
상기 제2 전극층(190)은 상기 발광층(170)과 상기 화소정의막(160) 상에 형성된다. 여기서, 상기 제2 전극층(190)은 상기 제1 전극층(150)과 동일한 금속으로 형성될 수 있다.The
또한, 도 2a 내지 도 2c는 본 발명에 따른 유기 발광표시장치의 제조방법의 공정 순서도이다. 2A to 2C are flowcharts illustrating a method of manufacturing an organic light emitting display device according to the present invention.
먼저, 도 2a에 도시된 바와 같이, 상기 기판(100) 하부에 상기 광변색성층(110)을 소정 두께로 형성한다. First, as shown in FIG. 2A, the
보다 상세하게는, 상기 광변색성층(110)은 빛에 의해 가역적으로 변화하는 무기물계, 유기물계 및 글래스계의 물질들 중 선택된 적어도 하나의 광색성 물질로 이루어지며, 예컨대 투명한 SiO2, AI203, TiO2, ormosils와 같은 재료를 졸젤법(Sol-gel)으로 형성한 후 유기 광색성 특성을 보이는 도펀트를 다공성 공간에 침투시켜 형성한다. 여기서, 졸젤법은 SiO2와 같은 유기 분자들을 낮은 온도에서 분자 구조에 열적 손실이 가지 않는 가장 효과적인 방법이다.More specifically, the
상기 광색성 물질을 기판 하부에 도포하는 방법은 스핀 코팅, 딥 코팅 또는 스프레이 코팅 등과 같은 박막코팅 분야에서 사용되는 통상의 코팅방법들 중 임의의 방법을 따를 수 있다. The method of applying the photochromic material to the bottom of the substrate may be any of the conventional coating methods used in the thin film coating field such as spin coating, dip coating or spray coating.
상기 광변색성층(110)은 빛 또는 자외선에 노출될 경우 빛을 흡수함으로써 분자구조가 바뀌면서 색을 가지게 되며, 반대로 빛이 약해지거나 실내 및 광원이 없을 때는 다시 투명성(transparent)을 가지게 된다. 따라서, 상기 광변색성층(110)이 빛 또는 자외선에 노출될 경우, 블랙매트릭스(Black Matrix)와 같은 역할을 하게되고, 상기 광변색성층(110)이 어두운 곳에 노출될 경우, 상기 광변색성층(110)은 투명하게 보이게 된다. When the
상기 기판(100) 상에는 버퍼층(120)이 형성된다. 상기 버퍼층(120)은 질화막, 산화막 또는 투명 절연성 재료 중에서 선택된 적어도 하나를 예켄대, PECED(Plasma Enhanced Chemical Vapor Deposition)법에 의해 대략 3000Å정도의 두께로 도포한다. The
이어서, 도 2b에 도시된 바와 같이, 상기 투명 박막트랜지스터(130)는 버퍼층 상에 형성된다. Subsequently, as shown in FIG. 2B, the transparent
상기 투명 박막트랜지스터(130)의 투명 반도체층(131)은 상기 버퍼층(120) 상에 소정의 패턴으로 형성된다. 상기 투명 반도체층(131)은 밴드갭이 3.0eV 이상인 광대역 반도체(wide band gap) 물질의 ZnO, ZnSnO, GaSnO, GaN, SiC 중 선택된 적어도 하나의 도전성 금속 재료로 형성된다. 상기 투명 반도체층(131)은, 투명성을 띠는 물질을 CVD(Chemical Vapor Deposition)에 의해 대략 300Å~2000Å 정도의 두께로 도포한 뒤, 이를 소정 형상, 예컨대 섬모양 형상으로 패터닝 한다. 이때, 상기 투명 반도체층(131)의 패터닝은, 포토레지스트(PR)의 도포, 노광 및 현상에 의한 식각 마스크를 이용하여 수행될 수 있다.The
여기서 상기 투명 반도체층(131)은 투명성을 띠는 물질을 도포함으로써 개구율을 향상시켜 설계시 필요한 기본 데이터 값을 완화할 수 있다. In this case, the
전술한 실시 예에서 상기 투명 반도체층(131)을 성막하는 방법으로는 CVD(Chemical Vapor Deposition)에 대해 개시되어 있으나, PLD(Pulse Laser deposition), ALD(Atomic Layer Deposition), 스퍼터 및 MBE(Molecular Beam Epixtaxy) 중 어느 한 방법을 이용할 수 있음은 물론이다. In the above-described embodiment, the method of forming the
이어서 상기 투명 박막트랜지스터(130)의 게이트 절연층(132)을 상기 투명 반도체층(131) 상에 형성하게 된다. 상기 게이트 절연층(132)은 산화막, 질화막 또는 투명 절연성 재료를 PECVD(Plasma Enhanced Chemical Vapor Deposition)법으로 대략 700Å~1000Å 정도의 두께로 도포한다. Subsequently, the
상기 투명 박막트랜지스터(130)의 게이트 전극(133)은 상기 게이트 절연층(132) 상에 형성한다. 구체적으로, 상기 게이트 절연층(132) 상에 투명성을 띠는 도전성 금속, 예컨대 ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 중 하나를 스퍼터링에 의해 대략 2000Å~3000Å 정도의 두께로 증착한 뒤, 이를 소정형상으로 패터닝한다. The
상기 투명 박막트랜지스터(130)의 층간 절연층(134)는 상기 게이트 전극(130)을 포함한 상기 게이트 절연층(132) 상에 형성한다. 상기 층간 절연층(134)은 상기 게이트 절연층(132)의 형성 방법과 동일한 방법으로 형성될 수 있다.The interlayer insulating
그 다음, 상기 투명 박막트랜지스터(130)의 소스/드레인 전극(135a,135b)은 상기 층간 절연층(134) 상에 형성되며, 상기 게이트 절연층(132)과 상기 층간 절연층(134)에 형성된 콘택 홀을 통하여 상기 투명 반도체층(131)의 양측에 각각 전기적으로 연결되도록 형성된다. 상기 투명 반도체층(130) 상에 형성된 소스/드레인 전극(135a,135b)은 금속층 상부에 포토레지스트를 도포한 후 소정 형태로 패터닝 하여 형성한다. 여기서, 상기 소스/드레인 전극(135a,135b)은 전도성과 투명성이 양호한 금속, 예컨대 형성되며, ITO( indium tin oxide ), IZO (indium zinc oxide ), ITZO( indium zinc oxide ), ICO(Indium Cesium Oxide) 또는 반투명 메탈 등으로 형성될 수 있으며, 이들에 제한되지는 않는다.Next, the source /
이어서, 도 2c에 도시된 바와 같이, 상기 평탄화층(140)은 상기 투명 박막트랜지스터(130) 상에 형성된다. Subsequently, as shown in FIG. 2C, the
상기 제1 전극(150)은 상기 평탄화층(140)의 일영역을 에칭하여 상기 소스 및 드레인 전극(135a,135b) 중 어느 하나가 노출되도록 형성된 비어홀(151a)을 통해, 상기 소스 및 드레인 전극(135a,135b) 중 어느 하나와 전기적으로 연결된다. The first and
상기 화소정의막(160)은 상기 제1 전극층(150) 상에 형성되며, 상기 평탄화층(140) 상에 상기 제1 전극층(150)을 적어도 부분적으로 노출시키는 개구부(180)가 형성되며, 상기 화소정의막(160)은 500Å 내지 3000Å의 범위 두께로 형성된다. The
상기 발광층(170)은 상기 화소정의막(160)의 일영역 및 개구부(180) 상에 형성된다. 상기 발광층(150)은 정공주입층, 정공수송층, 발광층, 정공억제층, 전자수송층, 전자주입층 중 적어도 하나의 단층막 또는 복수의 다층막으로 구성될 수 있다. The
상기 제2 전극층(190)은 상기 발광층(170) 상부에 형성된다. 이러한 구조의 유기발광소자는 다음과 같은 발광원리에 의해 발광한다. 일단, 상기 제1 전극층(150)으로부터 주입된 정공과 상기 제2 전극층(190)으로부터 발생된 정공이 발광층(170)에서 결합하여 여기자를 생성하고, 이 여기자가 여기상태에서 기저상태로 변화됨에 따라, 발광층의 형광성 분자가 발광한다. The
이상 본 발명을 상세히 설명하였으나 본 발명은 이에 한정되지 않으며, 본 발명이 속하는 기술적 사상 내에서 당 분야의 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 물론이다. Although the present invention has been described in detail above, the present invention is not limited thereto, and many modifications are possible by those skilled in the art within the technical idea to which the present invention pertains.
이상과 같이, 본 발명에 의하면, 유기 발광표시장치의 기판 하부에 광변색성층을 형성함으로써, 유기 발광표시장치가 어두운 곳에 노출되면 광변색성층은 투명하게 보이게 되고, 유기 발광표시장치가 빛 또는 자외선에 노출될 경우 광변색성층은 불투명한 색을 가지게됨으로써 블랙매트릭스와 같은 역할을 할 수 있다. 또한, 화상표시장치 및 다양한 디스플레이 분야에서 폭넓게 응용될 수 있을 것이다. As described above, according to the present invention, the photochromic layer is formed under the substrate of the organic light emitting diode display, so that when the organic light emitting diode display is exposed to a dark place, the photochromic layer becomes transparent and the organic light emitting diode display is light or ultraviolet rays. When exposed to light, the photochromic layer may have an opaque color, thus acting as a black matrix. In addition, it may be widely applied in the image display device and various display fields.
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020050069173A KR100711890B1 (en) | 2005-07-28 | 2005-07-28 | Organic Light Emitting Display and Fabrication Method for the same |
US11/493,576 US7663302B2 (en) | 2005-07-28 | 2006-07-27 | Organic light emitting display (OLED) and its method of fabrication |
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- 2006-07-28 EP EP06118035.2A patent/EP1748507B1/en active Active
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KR20020045676A (en) * | 2000-12-09 | 2002-06-20 | 박영호 | A colorful light controlling method and a pattern selecting method and an error checking method and the neon trans controller with these punctions |
KR20050052303A (en) * | 2003-11-29 | 2005-06-02 | 삼성에스디아이 주식회사 | Thermal transfer element with lthc having gradient concentration |
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US8462130B2 (en) | 2010-10-29 | 2013-06-11 | Samsung Display Co., Ltd. | Organic light emitting display having touch screen function |
US11508313B2 (en) | 2020-09-08 | 2022-11-22 | Samsung Display Co., Ltd. | Display device having a plurality of display regions with different driving frequencies and driving method thereof |
US11942043B2 (en) | 2020-09-08 | 2024-03-26 | Samsung Display Co., Ltd. | Display device having varied driving frequency in the boundary region and driving method thereof |
Also Published As
Publication number | Publication date |
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US20070024187A1 (en) | 2007-02-01 |
EP1748507A1 (en) | 2007-01-31 |
US7663302B2 (en) | 2010-02-16 |
KR20070014494A (en) | 2007-02-01 |
EP1748507B1 (en) | 2014-03-05 |
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