KR100711890B1 - Organic Light Emitting Display and Fabrication Method for the same - Google Patents

Organic Light Emitting Display and Fabrication Method for the same Download PDF

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Publication number
KR100711890B1
KR100711890B1 KR20050069173A KR20050069173A KR100711890B1 KR 100711890 B1 KR100711890 B1 KR 100711890B1 KR 20050069173 A KR20050069173 A KR 20050069173A KR 20050069173 A KR20050069173 A KR 20050069173A KR 100711890 B1 KR100711890 B1 KR 100711890B1
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South Korea
Prior art keywords
layer
formed
light emitting
thin film
electrode layer
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KR20050069173A
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Korean (ko)
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KR20070014494A (en
Inventor
모연곤
신현수
정재경
진동언
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삼성에스디아이 주식회사
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
    • H01L51/52Details of devices
    • H01L51/5281Arrangements for contrast improvement, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50Organic light emitting devices
    • H01L2251/53Structure
    • H01L2251/5307Structure specially adapted for controlling the direction of light emission
    • H01L2251/5323Two-side emission, i.e. TOLED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays

Abstract

The present invention relates to an organic light emitting display device and a manufacturing method thereof.
An organic light emitting display device according to an embodiment of the present invention includes a substrate, a photochromic layer formed under the substrate, at least one transparent thin film transistor formed on the substrate, a planarization layer formed on the transparent thin film transistor, and one region of the planarization layer. A first electrode layer formed on the first electrode layer, the first electrode layer formed to be connected to any one of the source and drain electrodes of the transparent thin film transistor, and an opening formed on the first electrode layer and at least partially exposing the first electrode layer. And a light emitting layer formed on one region and the opening of the pixel definition layer, and a second electrode layer formed on the light emitting layer.
Photochromic Layer, Transparent Thin Film Transistor

Description

Organic Light Emitting Display and Fabrication Method for It {Organic Light Emitting Display and Fabrication Method for the same}

1 is a schematic cross-sectional view of an organic light emitting diode display according to the present invention.

2A to 2C are flowcharts illustrating a method of manufacturing an organic light emitting display device according to the present invention.

♣ Explanation of symbols for the main parts of the drawing ♣

 100 substrate 110 photochromic layer

 120: buffer layer 130: thin film transistor

 140: planarization layer 150: first electrode layer

 160: pixel defining layer 170: light emitting layer

 180: opening 190: second electrode layer

The present invention relates to an organic light emitting display device and a method of manufacturing the same. More specifically, by forming a photochromic layer under a substrate of the organic light emitting display device, the photochromic layer becomes transparent when the organic light emitting display device is exposed to a dark place. When the organic light emitting display is exposed to light or ultraviolet rays, the photochromic layer has an opaque color, and thus, the organic light emitting display device and the manufacturing method thereof may serve as a black matrix.

The organic light emitting diode display is made of a relatively uniform and flat thin film. In addition, in the organic light emitting diode display, an electrode on the side from which light is emitted is formed of a transparent conductive thin film, and an electrode on the opposite side is mainly formed of a metal such as aluminum or refractory metal. However, these metal thin films have a large reflectance, which causes a problem that the sharpness of the screen is greatly deteriorated when strong light from the external light source (light from the strong light source even though sunlight is incident) is directly incident.

Therefore, in order to prevent the fall of visibility by such external light reflection, there exists a method of forming an anti-reflective film in a display surface or a display inside generally. For example, in the organic light emitting display device having a conventional structure and a discharged structure, a low-reflectance pseudo diamond carbon thin film is formed between a metal electrode film and an insulating film, between an insulating film and a fluorescent film, or between a metal conductive film and a fluorescent film. Formation has been introduced to minimize reflection by metal electrodes and increase the efficiency of electrons injected into the fluorescent film.

However, when the anti-reflection film is inserted to prevent reflection as described above, the anti-reflection film is required to prevent the reflection from the metal thin film so that a clear image can be seen even under an external strong light source. Despite the absence of the anti-reflection film, there is still a problem in reducing the overall luminous efficiency of the organic light emitting display device.

Accordingly, the present invention has been made to solve the above-mentioned problems. When the organic light emitting display is exposed to a dark place by forming a photochromic layer under the substrate, the photochromic layer becomes transparent. When a photochromic layer is exposed to light or ultraviolet rays, the photochromic layer has an opaque color and relates to an organic light emitting display device and a method of manufacturing the same, which can act as a black matrix.

In order to achieve the above object, according to an aspect of the present invention, the organic light emitting display device of the present invention, a photochromic layer formed on the lower substrate, at least one transparent thin film transistor formed on the substrate, A planarization layer formed on the transparent thin film transistor, a first electrode layer formed on one region of the planarization layer, and connected to any one of a source and a drain electrode of the transparent thin film transistor, and formed on the first electrode layer. And a pixel definition layer having an opening formed to at least partially expose the first electrode layer, a light emitting layer formed on one region of the pixel definition layer and the opening, and a second electrode layer formed on the light emitting layer.

Preferably, the photochromic layer is formed of at least one of inorganic, organic and glass-based materials reversibly changed by light, the photochromic layer is a boron containing silver (Ag) halogen compound crystals It is characterized by consisting of silicate (borosilicate), the photochromic layer is characterized in that the color is changed when exposed to light or ultraviolet light. In addition, the first electrode layer and the second electrode layer is characterized in that the transparent electrode. In addition, the light emitting layer is characterized in that the two-sided light emission.

According to another aspect of the invention, the method of manufacturing an organic light emitting display device of the present invention comprises the steps of forming a photochromic layer on the lower substrate, forming at least one transparent thin film transistor on the substrate, the transparent thin film Forming a planarization layer on the transistor, forming a first electrode layer on one region of the planarization layer, and forming a first electrode layer to be connected to any one of a source and a drain electrode of the thin film transistor, and on the first electrode layer Forming a pixel defining layer having an opening so as to partially expose one region of the first electrode layer, forming a light emitting layer on one region and the opening of the pixel defining layer, the light emitting layer and the pixel Forming a second electrode layer on the defining layer.

Preferably, the photochromic layer is formed using a sol-gel process.

Hereinafter, with reference to the drawings showing embodiments of the present invention, the present invention will be described in more detail.

1 is a schematic cross-sectional view of an organic light emitting diode display according to the present invention.

Referring to FIG. 1, the organic light emitting diode display 10 includes the substrate 100, a photochromic layer 110 formed under the substrate 100, and a buffer layer 120 formed on the substrate 100. ), A transparent thin film transistor 130 formed on the buffer layer 120, a planarization layer 140 formed on the transparent thin film transistor 130, and one region of the planarization layer 140. And a first electrode layer 150 formed on the first thin film transistor 130 and connected to any one of the source and drain electrodes 135a and 135b, and formed on the first electrode layer 150. A pixel definition layer 160 having an opening 180 formed to at least partially expose 150, a region of the pixel definition layer 160, an emission layer 170 formed on the opening 180, and the emission layer The second electrode layer 190 is formed on the upper portion 170.

The substrate 100 may be made of, for example, an insulating material such as glass, plastic, silicon, or synthetic resin, and a transparent substrate such as a glass substrate is preferable.

The photochromic layer 110 is formed under the substrate 100, and the photochromic layer is formed of at least one of inorganic, organic, and glass-based materials reversibly changed by light. Ag) It is preferable that it consists of borosilicate containing a halogen compound crystal. When the photochromic layer 110 is exposed to light or ultraviolet rays, Cl - ions of silver (Ag) or a halogen compound crystal are released to electrons, and the emitted electrons are reduced to Ag + to neutral Ag and Cl. Is changed. Accordingly, the photochromic layer 110 may have an opaque color, and thus may serve as a black matrix.

The buffer layer 110 is formed on the substrate 100, and is formed of a nitride film, an oxide film, or a transparent insulating material, but is not limited thereto.

The transparent thin film transistor 130 is formed on the buffer layer 120.

Hereinafter, the transparent thin film transistor 130 will be described in more detail.

The transparent semiconductor layer 131 of the transparent thin film transistor 130 is formed in a predetermined pattern on the buffer layer 120. The transparent semiconductor layer 131 may be formed of at least one conductive metal material selected from ZnO, ZnSnO, GaSnO, GaN, and SiC of a wide band gap material having a band gap of 3.0 eV or more.

The gate insulating layer 132 of the transparent thin film transistor 130 is formed on the transparent semiconductor layer 131 and insulates the semiconductor layer 131 from the source / drain electrodes 135a and 135b. The gate insulating layer 132 is formed of an oxide film, a nitride film, a transparent insulating material, or the like, but is not limited thereto.

The gate electrode 133 of the transparent thin film transistor 130 is formed on the gate insulating layer 132, and the gate electrode 133 is formed on the channel region (not shown) of the transparent semiconductor layer 131. It is formed in a predetermined pattern. The gate electrode 131 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (ITZO), indium cesium oxide (ICO), or a translucent metal having high transparency, but are not limited thereto. It doesn't work.

The interlayer insulating layer 134 of the transparent thin film transistor 130 is formed on the gate electrode 133, wherein the insulating material of the interlayer insulating layer 134 is made of the same material as the gate insulating layer 132. Can be formed.

Source / drain electrodes 135a and 135b of the transparent thin film transistor 130 are formed on the interlayer insulating layer 134 and contact holes formed in the gate insulating layer 132 and the interlayer insulating layer 134. It is formed to be electrically connected to both sides of the transparent semiconductor layer 131 through. The source / drain electrodes 135a and 135b may be formed of a metal having good conductivity and transparency, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (ITZO), and indium cement oxide (ICO). ) Or translucent metal and the like, but is not limited thereto.

The planarization layer 140 is formed on the transparent thin film transistor 130, and is formed of a nitride film, an oxide film, or a transparent insulating material, but is not limited thereto. The via hole 151a formed by etching one region of the planarization layer 140 is formed on the planarization layer 140.

The first electrode layer 150 is electrically connected to any one of the source and drain electrodes 135a and 135b through a via hole 151a formed on the planarization layer 140.

The pixel definition layer 160 is formed on the first electrode layer 150, and forms an opening 180 at least partially exposing the first electrode layer 150.

The emission layer 170 is formed on one region of the pixel definition layer 160 and the opening 180, and the emission layer 170 further includes a portion of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. It may include. The light emitting layer 170 generates light by combining holes and electrons injected from the first electrode 150 and the second electrode layer 190.

The second electrode layer 190 is formed on the emission layer 170 and the pixel definition layer 160. Here, the second electrode layer 190 may be formed of the same metal as the first electrode layer 150.

2A to 2C are flowcharts illustrating a method of manufacturing an organic light emitting display device according to the present invention.

First, as shown in FIG. 2A, the photochromic layer 110 is formed to a predetermined thickness under the substrate 100.

More specifically, the photochromic layer 110 is made of at least one photochromic material selected from inorganic, organic and glass-based materials reversibly changed by light, for example, transparent SiO 2 , AI 2 A material such as 0 3 , TiO 2 , ormosils is formed by a sol-gel method, and a dopant exhibiting organic photochromic properties is formed by infiltrating into the porous space. Here, the sol-gel method is the most effective method in which organic molecules such as SiO 2 are not thermally lost in molecular structure at low temperatures.

The method of applying the photochromic material to the bottom of the substrate may be any of the conventional coating methods used in the thin film coating field such as spin coating, dip coating or spray coating.

When the photochromic layer 110 is exposed to light or ultraviolet rays, the photochromic layer 110 absorbs light to change its molecular structure and thus has a color. On the contrary, the photochromic layer 110 has transparency again when the light is weak or there is no light source in the room. Therefore, when the photochromic layer 110 is exposed to light or ultraviolet rays, the photochromic layer 110 serves as a black matrix, and when the photochromic layer 110 is exposed to a dark place, the photochromic layer ( 110 appears transparent.

The buffer layer 120 is formed on the substrate 100. The buffer layer 120 is coated with at least one selected from a nitride film, an oxide film, or a transparent insulating material to a thickness of about 3000 kPa by a plasma enhanced chemical vapor deposition (PECED) method.

Subsequently, as shown in FIG. 2B, the transparent thin film transistor 130 is formed on the buffer layer.

The transparent semiconductor layer 131 of the transparent thin film transistor 130 is formed in a predetermined pattern on the buffer layer 120. The transparent semiconductor layer 131 is formed of at least one conductive metal material selected from ZnO, ZnSnO, GaSnO, GaN, and SiC of a wide band gap material having a band gap of 3.0 eV or more. The transparent semiconductor layer 131 is coated with a material having transparency to a thickness of about 300 kPa to 2000 kPa by CVD (Chemical Vapor Deposition), and then patterned it into a predetermined shape, for example, an island shape. In this case, the patterning of the transparent semiconductor layer 131 may be performed using an etching mask by applying, exposing and developing photoresist PR.

In this case, the transparent semiconductor layer 131 may be coated with a material having transparency to improve the aperture ratio, thereby alleviating basic data values required for design.

In the above-described embodiment, the method of forming the transparent semiconductor layer 131 is disclosed for chemical vapor deposition (CVD). However, pulse laser deposition (PLD), atomic layer deposition (ALD), sputtering, and molecular beams (MBE) are disclosed. Of course, any one of Epixtaxy) can be used.

Subsequently, the gate insulating layer 132 of the transparent thin film transistor 130 is formed on the transparent semiconductor layer 131. The gate insulating layer 132 is coated with an oxide film, a nitride film, or a transparent insulating material to a thickness of about 700 kPa to 1000 kPa by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.

The gate electrode 133 of the transparent thin film transistor 130 is formed on the gate insulating layer 132. Specifically, a conductive metal having transparency on the gate insulating layer 132, such as indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (ITZO), indium cesium oxide (ICO) or translucent metal One is deposited by sputtering to a thickness of about 2000 kPa to about 3000 kPa, and then patterned into a predetermined shape.

The interlayer insulating layer 134 of the transparent thin film transistor 130 is formed on the gate insulating layer 132 including the gate electrode 130. The interlayer insulating layer 134 may be formed by the same method as the method of forming the gate insulating layer 132.

Next, the source / drain electrodes 135a and 135b of the transparent thin film transistor 130 are formed on the interlayer insulating layer 134 and formed on the gate insulating layer 132 and the interlayer insulating layer 134. It is formed to be electrically connected to both sides of the transparent semiconductor layer 131 through contact holes, respectively. The source / drain electrodes 135a and 135b formed on the transparent semiconductor layer 130 are formed by applying a photoresist on the metal layer and patterning the photoresist. The source / drain electrodes 135a and 135b may be formed of a metal having good conductivity and transparency, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (ITZO), and indium cement oxide (ICO). ) Or translucent metal and the like, but is not limited thereto.

Subsequently, as shown in FIG. 2C, the planarization layer 140 is formed on the transparent thin film transistor 130.

The first and second electrodes 150 may be etched in one region of the planarization layer 140 to expose one of the source and drain electrodes 135a and 135b to expose the source and drain electrodes. Electrical connection with either one of 135a, 135b).

The pixel defining layer 160 is formed on the first electrode layer 150, and an opening 180 is formed on the planarization layer 140 to at least partially expose the first electrode layer 150. The pixel defining layer 160 is formed to have a thickness in the range of 500 mV to 3000 mV.

The emission layer 170 is formed on one region and the opening 180 of the pixel definition layer 160. The light emitting layer 150 may be composed of at least one single layer film or a plurality of multilayer films of a hole injection layer, a hole transport layer, a light emitting layer, a hole suppression layer, an electron transport layer, an electron injection layer.

The second electrode layer 190 is formed on the emission layer 170. The organic light emitting device having such a structure emits light by the following light emitting principle. Once, holes injected from the first electrode layer 150 and holes generated from the second electrode layer 190 combine in the emission layer 170 to generate excitons, and as the excitons change from the excited state to the ground state, The fluorescent molecules in the light emitting layer emit light.

Although the present invention has been described in detail above, the present invention is not limited thereto, and many modifications are possible by those skilled in the art within the technical idea to which the present invention pertains.

As described above, according to the present invention, the photochromic layer is formed under the substrate of the organic light emitting diode display, so that when the organic light emitting diode display is exposed to a dark place, the photochromic layer becomes transparent and the organic light emitting diode display is light or ultraviolet rays. When exposed to light, the photochromic layer may have an opaque color, thus acting as a black matrix. In addition, it may be widely applied in the image display device and various display fields.

Claims (8)

  1. Substrate,
    A photochromic layer formed under the substrate,
    At least one transparent thin film transistor formed on the substrate,
    A planarization layer formed on the transparent thin film transistor,
    A first electrode layer formed on one region of the planarization layer and formed to be connected to any one of a source and a drain electrode of the transparent thin film transistor;
    A pixel definition layer formed on the first electrode layer, the pixel defining layer having an opening so as to at least partially expose the first electrode layer;
     An emission layer formed on one region and the opening of the pixel definition layer;
    And a second electrode layer formed over the light emitting layer.
  2. The organic light emitting display device of claim 1, wherein the photochromic layer is formed of at least one of inorganic, organic, and glass materials reversibly changed by light.
  3. The organic light emitting display device according to claim 2, wherein the photochromic layer is made of borosilicate containing silver (Ag) halogen compound crystals.
  4. The organic light emitting display device of claim 1, wherein the photochromic layer is changed in color when exposed to light or ultraviolet rays.
  5. The organic light emitting display device of claim 1, wherein the first electrode layer and the second electrode layer are transparent electrodes.
  6. The organic light emitting display device of claim 1, wherein the light emitting layer emits double-sided light.
  7. Forming a photochromic layer under the substrate;
    Forming at least one transparent thin film transistor on the substrate;
    Forming a planarization layer on the transparent thin film transistor;
    Forming a first electrode layer on one region of the planarization layer, the first electrode layer being connected to any one of a source and a drain electrode of the thin film transistor;
    Forming a pixel definition layer formed on the first electrode layer, the pixel defining layer having an opening to partially expose one region of the first electrode layer;
    Forming an emission layer on one region of the pixel definition layer and the opening;
    And forming a second electrode layer on the light emitting layer and the pixel defining layer.
  8. The method of claim 7, wherein the photochromic layer is formed using a sol-gel process.
KR20050069173A 2005-07-28 2005-07-28 Organic Light Emitting Display and Fabrication Method for the same KR100711890B1 (en)

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KR20050069173A KR100711890B1 (en) 2005-07-28 2005-07-28 Organic Light Emitting Display and Fabrication Method for the same
US11/493,576 US7663302B2 (en) 2005-07-28 2006-07-27 Organic light emitting display (OLED) and its method of fabrication
EP20060118035 EP1748507B1 (en) 2005-07-28 2006-07-28 Organic light emitting display and its method of fabrication

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