CN106953025B - The manufacturing method of organic light-emitting display device - Google Patents
The manufacturing method of organic light-emitting display device Download PDFInfo
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- CN106953025B CN106953025B CN201710097367.3A CN201710097367A CN106953025B CN 106953025 B CN106953025 B CN 106953025B CN 201710097367 A CN201710097367 A CN 201710097367A CN 106953025 B CN106953025 B CN 106953025B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention relates to a kind of manufacturing method of organic light-emitting display device, the manufacturing method of the organic light-emitting display device includes：Thin film transistor (TFT) is formed on substrate, substrate includes pixel region and non-pixel region；Protective film is formed on thin film transistor (TFT)；The first organic insulating film and anode reflecting layer are sequentially formed on protective film, and the roughness of the first organic insulating film or anode reflecting layer in non-pixel region is made to be more than the roughness on pixel region；The second organic insulating film is formed on anode reflecting layer, the second organic insulating film has the first opening, the first opening corresponding with pixel region；Organic luminous layer is formed on the second organic insulating film, the area of organic luminous layer is more than the area of the first opening；Cathode layer is formed on organic luminous layer.The manufacturing method of above-mentioned organic light-emitting display device reduces the mirror-reflection of non-pixel region, reduces influencing each other between pixel by increasing the roughness of organic light emitting apparatus anode non-pixel region.
Description
Technical field
The present invention relates to organic light emitting display technical fields, more particularly to a kind of manufacturer of organic light-emitting display device
Method.
Background technology
With the development of science and technology and social economy, scientific and technological progress active influence the economy of society and changes people
Life style.Usually, organic light-emitting display device is the self-emission type display device for including organic light emitting apparatus (OLED),
And OLED includes hole injecting electrode, electron injection electrode and having between hole injecting electrode and electron injection electrode
Machine emission layer.In organic light-emitting display device, injected from hole injecting electrode injected holes and from electron injection electrode
Electronics combines in organic emission layer to generate exciton, and exciton transits to ground state from excitation state and generates light.
Organic light-emitting display device as self-emission type display device does not need individual light source.Therefore, organic light emission
Display device can operate under low pressure, be light and thin type, and include high-quality characteristics, for example, wide viewing angle, high contrast and fast
Speed response, therefore, organic light-emitting display device is increasingly becoming next generation display device, more good display effect is presented.
However, the light beam sent out from organic luminous layer in addition to up direction project it is outer, also part from horizontal direction injection, they or
It is mapped to non-pixel region and forms abnormal bright spot, or be mapped to other pixel light emission regional effect pixel visual effect.
Invention content
Based on this, it is necessary to which the technology for forming abnormal bright spot to non-pixel region for the light beam that organic luminous layer is sent out is asked
Topic, provides a kind of manufacturing method of organic light-emitting display device.
A kind of manufacturing method of organic light-emitting display device, the manufacturing method of the organic light-emitting display device include：In base
Thin film transistor (TFT) is formed on plate, the substrate includes pixel region and non-pixel region；It is formed and is protected on the thin film transistor (TFT)
Cuticula；The first organic insulating film and anode reflecting layer are sequentially formed on the protective film, make first organic insulating film or
Roughness of the anode reflecting layer in the non-pixel region is more than the roughness on the pixel region；In the sun
The second organic insulating film is formed on the reflecting layer of pole, second organic insulating film has the first opening, first opening and institute
It is corresponding to state pixel region；Organic luminous layer is formed on second organic insulating film, the area of the organic luminous layer is big
In the area of first opening；Cathode layer is formed on the organic luminous layer.
It is described in one of the embodiments, that the first organic insulating film and anode reflection are sequentially formed on the protective film
Layer makes the roughness of first organic insulating film or the anode reflecting layer in the non-pixel region be more than in the picture
Roughness on plain region, including：The first organic insulating film is formed on the protective film；To first organic insulating film into
Row roughening treatment makes roughness of first organic insulating film in the non-pixel region be more than in the pixel region
On roughness；Anode reflecting layer is formed on the first organic insulating film after roughening treatment.
It is described in one of the embodiments, that first organic insulating film is roughened, including：Described
The first photoetching agent pattern is formed on first organic insulating film, first photoetching agent pattern covers the pixel region and has
The second opening corresponding with the non-pixel region；Oxygen is passed through to carry out at plasma surface first organic insulating film
Reason, so that roughness of first organic insulating film in the non-pixel region is more than coarse on the pixel region
Degree；Slough first photoetching agent pattern.
It is described in one of the embodiments, that first organic insulating film is roughened, including：To described
Protective film and first organic insulating film carry out via etch, form through-hole and make first organic insulating film described non-
Roughness on pixel region is more than the roughness on the pixel region, wherein the through-hole exposes the thin film transistor (TFT)
Drain electrode；Anode reflecting layer is formed on first organic insulating film after roughening treatment, for described logical
Anode reflecting layer is formed on the protective film in hole and first organic insulating film, so that the anode reflecting layer is across described
Through-hole is contacted with the drain electrode of the thin film transistor (TFT).
It is described in one of the embodiments, that via etch is carried out to the protective film and first organic insulating film,
Including：Through-hole photoetching agent pattern is formed on first organic insulating film, the through-hole photoetching agent pattern covers the pixel
Region and with third corresponding with the non-pixel region opening；To the protective film and first organic insulating film
Via dry etching is carried out, wherein first organic insulating film is described logical corresponding to being formed before the via dry etching
The position in hole has the 4th opening.
It is described in one of the embodiments, that the first organic insulating film and anode reflection are sequentially formed on the protective film
Layer makes the roughness of first organic insulating film or the anode reflecting layer in the non-pixel region be more than in the picture
Roughness on plain region, including：The first organic insulating film and anode reflecting layer are sequentially formed on the protective film；Described
The second photoetching agent pattern is formed on anode reflecting layer, second photoetching agent pattern covers the pixel region and has and institute
State the corresponding third opening of non-pixel region；Roughening etching is carried out to the anode reflecting layer, is etched in the roughening
After slough second photoetching agent pattern.
It is described in one of the embodiments, that the anode reflecting layer is performed etching, be：Using Cl2, in HBr and HI
At least one mixed gas with pre-set gas, dry etching is carried out to the anode reflecting layer；Alternatively, using oxalic acid to institute
It states anode reflecting layer and carries out wet etching
It is described in one of the embodiments, that thin film transistor (TFT) is formed on substrate, including：Semiconductor is formed on substrate
Layer；Gate insulating film is formed on the semiconductor layer；Gate electrode is formed on the gate insulating film；In grid electricity
Interlayer dielectric is formed on extremely；Source electrode and drain electrode are respectively formed on the interlayer dielectric, to form film
Transistor.
It is described in one of the embodiments, that thin film transistor (TFT) is formed on substrate, including：Grid are sequentially formed on substrate
The gate insulating film of pole and the covering grid；Semiconductor layer is formed on the gate insulating film；On the semiconductor layer
Form interlayer dielectric；Source electrode and drain electrode are respectively formed on the interlayer dielectric, to form film crystal
Pipe.
The manufacturing method of above-mentioned organic light-emitting display device, by increasing the thick of organic light emitting apparatus anode non-pixel region
Rugosity reduces the mirror-reflection of non-pixel region, reduces influencing each other between pixel.
Description of the drawings
Fig. 1 is the organic light-emitting display device that the manufacturing method in one embodiment using organic light-emitting display device is formed
Structural schematic diagram；
Fig. 2 is the step schematic diagram of the manufacturing method of organic light-emitting display device in one embodiment；
Fig. 3 is the organic light-emitting display device that the manufacturing method in one embodiment using organic light-emitting display device is formed
When part flow state schematic diagram；
Fig. 4 is the organic light emitting display dress that the manufacturing method in another embodiment using organic light-emitting display device is formed
Part flow state schematic diagram when setting.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific implementation mode be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of violating intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
For example, a kind of manufacturing method of organic light-emitting display device, including：Thin film transistor (TFT) is formed on substrate, it is described
Substrate includes pixel region and non-pixel region；Protective film is formed on the thin film transistor (TFT)；The sequence on the protective film
The first organic insulating film and anode reflecting layer are formed, makes first organic insulating film or the anode reflecting layer in the non-picture
Roughness on plain region is more than the roughness on the pixel region；It is organic exhausted that second is formed on the anode reflecting layer
Velum, second organic insulating film have the first opening, first opening corresponding with the pixel region；Described
Organic luminous layer is formed on two organic insulating films, the area of the organic luminous layer is more than the area of first opening；Institute
It states and forms cathode layer on organic luminous layer.
The manufacturing method of above-mentioned organic light-emitting display device, it is thick in non-pixel region by increasing organic light emitting apparatus
Rugosity reduces the mirror-reflection of non-pixel region, reduces influencing each other between pixel.
Referring to Fig. 1, it is organic hair that the manufacturing method in one embodiment using organic light-emitting display device is formed
The structural schematic diagram of electro-optical display device 10, the organic light-emitting display device include substrate 100, thin film transistor (TFT) 110, protective film
120, the first organic insulating film 130, anode reflecting layer 140, the second organic insulating film 150, organic luminous layer 160 and cathode layer
170.Thin film transistor (TFT) 110 include semiconductor layer 111, gate insulating film 112, gate electrode 113, interlayer dielectric 114 and
Source-drain electrode electrode 115.
For a further understanding of the organic light emitting display formed using the manufacturing method of above-mentioned organic light-emitting display device
Device 10, in another embodiment, referring to Fig. 2, it is the manufacturing method 20 of organic light-emitting display device in one embodiment
The manufacturing method 20 of step schematic diagram, the organic light-emitting display device includes：
Step S201：Thin film transistor (TFT) is formed on substrate, the substrate includes pixel region and non-pixel region.
Specifically, thin film transistor (TFT) is formed in the pixel region on substrate.For example, being formed in the pixel region of substrate
The thin film transistor (TFT) of top gate structure；For another example, the thin film transistor (TFT) of bottom grating structure is formed in the pixel region of substrate.
As an implementation, semiconductor layer is formed on substrate；Gate insulating film is formed on the semiconductor layer；
Gate electrode is formed on the gate insulating film；Interlayer dielectric is formed on the gate electrode；In the layer insulation
Source electrode and drain electrode are respectively formed on film, to form the thin film transistor (TFT) of top gate structure.For example, in order to promote film
The performance of transistor first forms buffer layer on substrate, forms semiconductor layer on the buffer layer before forming semiconductor layer.
As another embodiment, grid is sequentially formed on substrate and covers the gate insulating film of grid；In grid
Semiconductor layer is formed on insulating film；Interlayer insulating film is formed on the semiconductor layer；It is respectively formed source on the interlayer dielectric
Pole electrode and drain electrode, to form the thin film transistor (TFT) of bottom grating structure.For example, in order to promote the performance of thin film transistor (TFT),
Before the gate is formed, buffer layer is first formed on substrate, prepare grid on the buffer layer and cover the gate insulating film of grid.
In the present embodiment, substrate is also referred to as insulating substrate or array substrate.It is with the thin film transistor (TFT) of top gate structure
Example, semiconductor layer may be provided on substrate, and using inorganic semiconductor (for example, non-crystalline silicon, polysilicon) or organic semiconductor.
In the exemplary embodiment, semiconductor layer may include oxide semiconductor.In an exemplary implementation, for example, oxide
Semiconductor may include the oxide of the material selected from the 12nd to 14 race's metallic element, for example, zinc (Zn), indium (In), gallium (Ga), tin
(Sn), the oxide of cadmium (Cd), germanium (Ge) and hafnium (Hf) and the material of combination thereof.Gate insulating film is disposed on the substrate,
And cover semiconductor layer.Gate electrode is arranged on gate insulating film.Interlayer dielectric is arranged on gate insulating film, and
Cover gate electrode.Source-drain electrode electrode is arranged on interlayer dielectric.Interlayer dielectric is provided with one or more contact holes, source
Drain electrode contacts after passing through the contact hole with semiconductor layer.
Organic light-emitting display device may also include capacitor, and at least one above-mentioned thin film transistor (TFT) constitutes pixel with capacitor
Circuit (not shown), interior each pixel region of organic light-emitting display device includes an at least pixel circuit.
Step S202：Protective film is formed on the thin film transistor (TFT).
Specifically, protective film covers entire thin film transistor (TFT) upper surface, such as covering source electrode, drain electrode and layer
Between insulating film.That is, protective film has enough thickness to cover entire thin film transistor (TFT) upper surface, such as cover source electrode
Electrode, drain electrode and interlayer dielectric.
Protective film has smooth upper surface.Protective film may include inorganic material and/or organic material.According to protective film
Material, protective film can pass through slot coated, sputtering, CVD (Chemical Vapor Deposition, chemical vapor deposition), original
Sublayer deposits (Atomic Layer Deposition, ALD), PECVD (Plasma Enhanced Chemical Vapor
Deposition, plasma enhanced chemical vapor deposition), HDP-CVD (high density plasma chemical vapor deposition), vacuum it is heavy
The techniques such as product are formed.
Step S203：The first organic insulating film and anode reflecting layer are sequentially formed on the protective film, make described first
The roughness of organic insulating film or the anode reflecting layer in the non-pixel region is more than thick on the pixel region
Rugosity.
Specifically, the first organic insulating film may include inorganic material and/or organic material.According to the first organic insulating film
Material, the first organic insulating film can be by using spin coating, printing, sputtering, CVD, ALD, PECVD, HDP-CVD, vacuum depositions etc.
It is formed.First organic insulating film and protective film can be formed by same or analogous material.First organic insulating film can be single layer
Or multilayered structure.
As an implementation, the first organic insulating film is formed on protective film；First organic insulating film is carried out thick
Roughening is handled, and so that roughness of first organic insulating film in the non-pixel region is more than coarse on the pixel region
Degree；Anode reflecting layer is prepared on the first organic insulating film after roughening treatment.
For example, being roughened to first organic insulating film, specially：To first organic insulating film with
The opposite subregion of non-pixel region is roughened so that the first organic insulating film is coarse in non-pixel region
Degree is more than the roughness on pixel region.For example, carrying out plasma to the first organic insulating film in non-pixel region
Surface treatment so that roughness of first organic insulating film in non-pixel region is more than the roughness on pixel region.
For example, after preparing protective film, via etch is carried out to protective film, forms the through-hole through protective film, with logical
Patterned first organic insulating film is prepared on the protective film in hole.For example, patterned first organic insulating film corresponding to
The position of through-hole has opening.Opening on first organic insulating film can pass through yellow light structure after the first organic insulating film film forming
Exposure map developing process is formed.At this point, a kind of embodiment being roughened to first organic insulating film is：It is complete
After anode via etch, it is initially formed covering pixel region, there is photoresist (PR) pattern being open in non-pixel region, such as
Shown in Fig. 3, then leads to oxygen and Surface Treatment with Plasma is done to the organic insulating film of opening portion position, be formed in non-pixel region thick
The first larger organic insulating film of rugosity, then to PR demouldings.Specifically, forming covering pixel on first organic insulating film
Region and the first photoetching agent pattern being open with opposite with non-pixel region second；It is passed through the first organic insulation of oxygen pair
Film carries out Surface Treatment with Plasma, since the first photoetching agent pattern has blocked the pixel region corresponded on the first organic insulating film
Part so that the first organic insulating film on pixel region is not reacted with oxygen, therefore after Surface Treatment with Plasma
Roughness of one organic insulating film in the non-pixel region is more than the roughness on the pixel region；Slough the first light
Photoresist pattern.In the present embodiment, pixel region also refers to the region that organic luminous layer and anode are in direct contact.
For another example, it after preparing protective film, before carrying out via etch to protective film, is directly prepared on protective film patterned
First organic insulating film, patterned first organic insulating film have the 4th opening in the position corresponding to through-hole.At this point, right
The another embodiment that first organic insulating film is roughened is：To the protective film and described first organic
Insulating film carries out via etch, forms through-hole and keeps roughness of first organic insulating film in the non-pixel region big
In the roughness on the pixel region, wherein the through-hole exposes the drain electrode of the thin film transistor (TFT).That is,
Realize via etch and the roughening treatment to the first organic insulating film simultaneously by via etch technique.Specifically, such as Fig. 4 institutes
Show, through-hole photoetching agent pattern is formed on first organic insulating film, and the through-hole photoetching agent pattern covers the pixel region
Domain and with third corresponding with the non-pixel region opening；To the protective film and first organic insulating film into
Row via dry etching, wherein first organic insulating film is corresponding to forming the through-hole before the via dry etching
Position have the 4th opening.For example, the 4th opening can be developed after the first organic insulating film film forming by yellow light composition exposure
Technique is formed.Preferably, the gas used in the dry etching is the mixed gas of tetrafluoride nitrogen and oxygen, or fluorination is closed
The mixed gas of object and pre-set gas.For example, the pre-set gas includes at least one of oxygen and hydrogen.For example, described pre-
If gas is oxygen, alternatively, the pre-set gas is hydrogen, alternatively, the pre-set gas is the mixed gas of oxygen and hydrogen,
Alternatively, the pre-set gas is the mixed gas of oxygen, hydrogen and other gases.
At this point, anode reflecting layer is formed on first organic insulating film after roughening treatment, for described
Anode reflecting layer is formed on the protective film of through-hole and first organic insulating film, so that the anode reflecting layer passes through institute
Through-hole is stated to contact with the drain electrode of the thin film transistor (TFT).
As another embodiment, the first organic insulating film is formed on protective film, such as carried after via etch
Patterned first organic insulating film is formed on the protective film of through-hole, patterned first organic insulating film is corresponding to through-hole
Position have opening.Opening on first organic insulating film can be exposed after the first organic insulating film film forming by yellow light composition
Photo development processes are formed.At this point, forming anode reflecting layer directly on the first organic insulating film；Anode reflecting layer is carried out coarse
Change is handled so that roughness of the anode reflecting layer in the non-pixel region is more than the roughness on the pixel region.
For example, sequentially forming the first organic insulating film and anode reflecting layer on protective film；Second is formed on the anode reflecting layer
Photoetching agent pattern, second photoetching agent pattern cover the pixel region and with corresponding with the non-pixel region
Third is open；Roughening etching is carried out to the anode reflecting layer, second photoetching agent pattern is sloughed after roughening etches,
Obtain the larger anode reflecting layer of roughness in non-pixel region, i.e. roughness of the anode reflecting layer in non-pixel region
More than the roughness on pixel region.
Specifically, roughening etching is carried out to the anode reflecting layer, to use Cl2, at least one of HBr and HI with
The mixed gas of pre-set gas carries out dry etching to the anode reflecting layer；Alternatively, using oxalic acid to the anode reflecting layer
Carry out wet etching.Roughness of the anode reflecting layer in non-pixel region can effectively be increased in this way.For example, described
Pre-set gas includes at least one of oxygen and hydrogen.For example, described preset other for oxygen, alternatively, the pre-set gas is
Hydrogen, alternatively, the pre-set gas be oxygen and hydrogen mixed gas, alternatively, the pre-set gas be oxygen, hydrogen and its
The mixed gas of his gas.
In order to further increase the roughness in the anode reflecting layer, it is preferred that carried out to the anode reflecting layer
After roughening etching, vulcanization silverskin is formed also on the anode reflecting layer corresponding to the non-pixel region, i.e., in sun
Pole reflecting layer forms Ag on region corresponding with non-pixel region2S (silver sulfide) film.Preferably, vulcanization silverskin uses hexafluoro
The plasma for changing sulphur is prepared, and can effectively increase the roughness in the anode reflecting layer in this way.
Specifically, the anode reflecting layer uses ITO/Ag/ITO structures.
As an implementation, in order to open the anode spacer of different pixels, in other words in order to by anode reflecting layer draw
It is divided into the anode of multiple pixels, after forming anode reflecting layer, also carries out anode pattern etching.Anode pattern etching refers to
Anode reflecting layer in non-pixel region is etched away into a part so that the anode spacer of different pixels comes.For example, coarse
Change and formed after anode reflecting layer on treated the first organic insulating film, carries out anode pattern etching；For another example, anode is being formed
Reflecting layer and after carrying out roughening etching to anode reflecting layer, carries out anode pattern etching.
Step S204：The second organic insulating film is formed on the anode reflecting layer, second organic insulating film has
Opening, the opening are corresponding with the pixel region.
Specifically, forming the second organic insulating film on the anode reflecting layer；Remove second organic insulating film position
Part on the anode reflecting layer, forms the opening, with the exposure anode reflecting layer.For example, etching side can be used
Method removes the part that second organic insulating film is located on the anode reflecting layer, forms the opening.
Step S205：Organic luminous layer is formed on second organic insulating film, the area of the organic luminous layer is big
In the area of first opening.
Specifically, being formed on the second organic insulating film top bigger than the opening area of second organic insulating film organic
Luminescent layer.The area that the area of the organic luminous layer is more than first opening, which refers to organic luminous layer covering entire second, to be had
The first opening on machine insulating film.
Step S206：Cathode layer is formed on the organic luminous layer.
Specifically, cathode layer can be formed by using techniques such as sputtering, vacuum deposition, CVD, PLD, printing, ALD.Showing
In example property embodiment, cathode layer may be set so that identical voltage is applied to all pixels.For example, anode reflecting layer
140, organic luminous layer 160 and cathode layer 170 form OLED device.For example, additionally forming protective layer (not on cathode layer
It shows).Protective layer can cover and protect OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode), thin
The components such as film transistor, capacitor.Specifically, protective layer may include inorganic insulation layer and/or organic insulator, and use
Such as the various deposition methods of PECVD, APCVD and LPCVD are formed.
It should be noted that thin film transistor (TFT) is not limited to above-mentioned structure, and it may include various structures.The present embodiment
In, thin film transistor (TFT) is top gate type thin film transistor shown in figure, and in other embodiments, thin film transistor (TFT) may be grid
The bottom gate thin film transistor below semiconductor layer is arranged in electrode.
The advantage of the invention is that：
Traditional light beam sent out from organic luminous layer is solved other than up direction is projected, also partly from lateral side
To emission technology problem, they are either mapped to non-pixel region and form abnormal bright spot or be mapped to other pixel light emission region shadow
Pixel visual effect is rung, the organic light-emitting display device manufactured by the manufacturing method of organic light-emitting display device increases
The roughness of organic light emitting apparatus anode non-pixel region, reduces the mirror-reflection of non-pixel region, reduces between pixel
It influences each other.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of manufacturing method of organic light-emitting display device, which is characterized in that including：
Thin film transistor (TFT) is formed on substrate, the substrate includes pixel region and non-pixel region；
Protective film is formed on the thin film transistor (TFT)；
The first organic insulating film and anode reflecting layer are sequentially formed on the protective film, make first organic insulating film or institute
It states roughness of the anode reflecting layer in the non-pixel region and is more than the roughness on the pixel region；
The second organic insulating film is formed on the anode reflecting layer, second organic insulating film has the first opening, described
First opening is corresponding with the pixel region；
Organic luminous layer is formed on second organic insulating film, the area of the organic luminous layer is more than described first and is open
Area；
Cathode layer is formed on the organic luminous layer.
2. the manufacturing method of organic light-emitting display device according to claim 1, which is characterized in that described in the protection
The first organic insulating film and anode reflecting layer are sequentially formed on film, and first organic insulating film or the anode reflecting layer is made to exist
Roughness in the non-pixel region is more than the roughness on the pixel region, including：
The first organic insulating film is formed on the protective film；
First organic insulating film is roughened, makes first organic insulating film in the non-pixel region
Roughness be more than roughness on the pixel region；
Anode reflecting layer is formed on the first organic insulating film after roughening treatment.
3. the manufacturing method of organic light-emitting display device according to claim 2, which is characterized in that described to described first
Organic insulating film is roughened, including：
The first photoetching agent pattern is formed on first organic insulating film, first photoetching agent pattern covers the pixel region
Domain and with it is corresponding with the non-pixel region second be open；
It is passed through oxygen and Surface Treatment with Plasma is carried out to first organic insulating film, so that first organic insulating film is in institute
The roughness stated in non-pixel region is more than the roughness on the pixel region；
Slough first photoetching agent pattern.
4. the manufacturing method of organic light-emitting display device according to claim 2, which is characterized in that described to described first
Organic insulating film is roughened, including：
Via etch is carried out to the protective film and first organic insulating film, form through-hole and makes first organic insulation
Roughness of the film in the non-pixel region is more than the roughness on the pixel region, wherein described in through-hole exposure
The drain electrode of thin film transistor (TFT)；
Anode reflecting layer is formed on first organic insulating film after roughening treatment, for described in the through-hole
Anode reflecting layer is formed on protective film and first organic insulating film, so that the anode reflecting layer passes through the through-hole and institute
State the drain electrode contact of thin film transistor (TFT).
5. the manufacturing method of organic light-emitting display device according to claim 4, which is characterized in that described to the protection
Film and first organic insulating film carry out via etch, including：
Through-hole photoetching agent pattern is formed on first organic insulating film, the through-hole photoetching agent pattern covers the pixel region
Domain and with third corresponding with the non-pixel region opening；
Via dry etching is carried out to the protective film and first organic insulating film, wherein before the via dry etching
First organic insulating film has the 4th opening corresponding to the position for forming the through-hole.
6. the manufacturing method of organic light-emitting display device according to claim 1, which is characterized in that described in the protection
The first organic insulating film and anode reflecting layer are sequentially formed on film, and first organic insulating film or the anode reflecting layer is made to exist
Roughness in the non-pixel region is more than the roughness on the pixel region, including：
The first organic insulating film and anode reflecting layer are sequentially formed on the protective film；
The second photoetching agent pattern is formed on the anode reflecting layer, second photoetching agent pattern covers the pixel region simultaneously
And with third corresponding with non-pixel region opening；
Roughening etching is carried out to the anode reflecting layer, second photoetching agent pattern is sloughed after roughening etching.
7. the manufacturing method of organic light-emitting display device according to claim 6, which is characterized in that described to the anode
Reflecting layer carries out roughening etching, is：
Using Cl2, the mixed gas of at least one of HBr and HI with pre-set gas, dry method quarter is carried out to the anode reflecting layer
Erosion；Alternatively,
Wet etching is carried out to the anode reflecting layer using oxalic acid.
8. the manufacturing method of organic light-emitting display device according to claim 6, which is characterized in that described to the anode
After reflecting layer carries out roughening etching, further include：
Vulcanization silverskin is formed on the anode reflecting layer corresponding to the non-pixel region.
9. the manufacturing method of organic light-emitting display device according to any one of claim 1 to 8, which is characterized in that institute
It states and forms thin film transistor (TFT) on substrate, including：
Semiconductor layer is formed on substrate；
Gate insulating film is formed on the semiconductor layer；
Gate electrode is formed on the gate insulating film；
Interlayer dielectric is formed on the gate electrode；
Source electrode and drain electrode are respectively formed on the interlayer dielectric, to form thin film transistor (TFT).
10. the manufacturing method of organic light-emitting display device according to any one of claim 1 to 8, which is characterized in that institute
It states and forms thin film transistor (TFT) on substrate, including：
The gate insulating film of grid and the covering grid is sequentially formed on substrate；
Semiconductor layer is formed on the gate insulating film；
Interlayer dielectric is formed on the semiconductor layer；
Source electrode and drain electrode are respectively formed on the interlayer dielectric, to form thin film transistor (TFT).
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