CN107293593B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
- Publication number
- CN107293593B CN107293593B CN201710587700.9A CN201710587700A CN107293593B CN 107293593 B CN107293593 B CN 107293593B CN 201710587700 A CN201710587700 A CN 201710587700A CN 107293593 B CN107293593 B CN 107293593B
- Authority
- CN
- China
- Prior art keywords
- layer
- groove
- display panel
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000004888 barrier function Effects 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 40
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 399
- 238000002161 passivation Methods 0.000 claims description 38
- 239000000084 colloidal system Substances 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 38
- 239000001301 oxygen Substances 0.000 abstract description 38
- 229910052760 oxygen Inorganic materials 0.000 abstract description 38
- 239000010409 thin film Substances 0.000 abstract description 13
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 42
- 239000000126 substance Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a display panel and a display device, which are provided with a display area and a non-display area surrounding the display area, and comprise: the first substrate comprises a first substrate base plate, a thin film transistor device layer and a first electrode layer which are sequentially arranged, wherein the thin film transistor device layer comprises a semiconductor layer, and the material of the semiconductor layer comprises metal oxide; at least one insulating layer is arranged between the semiconductor layer and the first electrode layer; the non-display area comprises at least one groove, the at least one groove is arranged in the at least one insulating layer, and the groove is arranged around the display area; the surface of the groove is provided with a first barrier layer. The recess and first barrier layer can the separation material such as steam and oxygen, prevent that material such as steam and oxygen from further invading to display panel inside, for prior art, can improve the ability that material such as display panel anti steam and oxygen corrodes, improve display panel's display quality, extension display panel's life.
Description
Technical field
The present invention relates to field of display technology, more particularly, to a kind of display panel and display device.
Background technique
The a type of display panel that the prior art provides has used thin film transistor (TFT) (Thin Film
Transistor, abbreviation TFT) technology.Increasing, the market demand share in particular with influence of the display panel in life
It increases sharply, therefore it provides high display quality, display panel with long service life are the directions of technology development.
The basic structure of thin film transistor (TFT) generally includes: semiconductor layer, grid, source electrode and drain electrode, wherein grid, source electrode
It is made with draining usually using metal material, the materials systems such as amorphous silicon, polysilicon, metal oxide can be used in semiconductor layer
Make.Referring to FIG. 1, Fig. 1 is a kind of the schematic diagram of the section structure for display panel that the prior art provides.The one of prior art offer
In kind display panel, including underlay substrate 01, buffer layer 02 and the thin film transistor (TFT) being arranged on buffer layer 02, wherein thin
Film transistor includes semiconductor layer 03, source electrode 04 and drain electrode 05, grid 06, and source electrode 04 and drain electrode 05 use and be arranged in same film
Layer；In addition to this, be provided between semiconductor layer 03 and grid 06 gate insulating layer 07, grid 06 and source electrode 04 (drain electrode 05) it
Between be provided with the first insulating layer 08 and second insulating layer 09.Wherein, the material of semiconductor layer 03 is indium gallium zinc oxide (Indium
Gallium Zinc Oxide, abbreviation IGZO).In order to guarantee the characteristic of semiconductor of IGZO, in the subsequent technique of semiconductor layer 03
The gate insulating layer 07 of middle production, the first insulating layer 08 and second insulating layer 09 are generally formed a film using lower temperature, and then are caused
Its compactness is insufficient, is easily entered by extraneous steam and oxygen etc. after completing display panel, to corrode the internal membrane of display panel
Layer structure, causes to show bad, display panel the lost of life.
Summary of the invention
In view of this, there is viewing area and the non-display area around viewing area, packet the present invention provides a kind of display panel
Include: first substrate, first substrate include the first underlay substrate set gradually, film transistor device layer, first electrode layer, thin
Film transistor device layer includes semiconductor layer, and the material of semiconductor layer includes metal oxide；Semiconductor layer and first electrode layer
Between include at least one layer of insulating layer；Non-display area includes at least one groove, and the setting of at least one groove is at least one layer of exhausted
In edge layer, groove is arranged around viewing area；Groove surfaces are provided with the first barrier layer.
In some alternative embodiments, the material of the first barrier layer includes transparent metal oxide.
In some alternative embodiments, the first barrier layer is identical as the material of first electrode layer.
In some alternative embodiments, at least one groove includes the first groove and the second groove, at least one layer insulation
Layer includes the first insulating layer and second insulating layer；First groove is arranged in the first insulating layer, and the setting of the second groove is exhausted second
In edge layer.
In some alternative embodiments, display panel further includes the second substrate, and the second substrate is opposite with first substrate to be set
It sets；Non-display area includes colloid, and colloid is arranged around viewing area, and colloid is for bonding first substrate and the second substrate；Groove is set
The side surface in first substrate close to the second substrate is set, includes part colloid in groove.
In some alternative embodiments, liquid crystal layer, first substrate, second are provided between first substrate and the second substrate
Substrate, colloid form confined space for accommodating liquid crystal layer.
In some alternative embodiments, at least one layer of insulating layer includes passivation layer, and first substrate further includes gate insulator
Layer and the second electrode lay；Film transistor device layer further includes grid layer, etching barrier layer, source-drain electrode layer；First underlay substrate,
Grid layer, gate insulating layer, semiconductor layer, etching barrier layer, source-drain electrode layer, the second electrode lay, passivation layer, first electrode layer edge
The direction of first underlay substrate towards first electrode layer is set gradually；It wherein, include at least one groove in passivation layer.
In some alternative embodiments, display panel further includes the second barrier layer, and the setting of the second barrier layer is exhausted in grid
Between edge layer and passivation layer；The setting of second barrier layer is arranged in non-display area, the second barrier layer around viewing area；First barrier layer
Identical as the material of first electrode layer, the second barrier layer is identical as the material of the second electrode lay.
In some alternative embodiments, at least one layer of insulating layer includes interlayer insulating film and passivation layer, and first substrate is also
Including buffer layer, gate insulating layer, the second electrode lay；Film transistor device layer further includes grid layer, source-drain electrode layer；First lining
Substrate, buffer layer, semiconductor layer, gate insulating layer, grid layer, interlayer insulating film, the second electrode lay, source-drain electrode layer, passivation
Layer, first electrode layer are set gradually along the direction of the first underlay substrate towards first electrode layer.
It in some alternative embodiments, include at least one groove in interlayer insulating film.
It in some alternative embodiments, include at least one groove in passivation layer.
In some alternative embodiments, the width of orthographic projection of the groove on the first underlay substrate is d1, and 10 μm≤
d1≤50um。
In some alternative embodiments, first substrate further includes multiple Organic Light Emitting Diodes；Organic Light Emitting Diode
Including the anode and cathode being oppositely arranged；First barrier layer is identical as the material of anode.
The present invention also provides a kind of display devices, including display panel provided by the invention.
Compared with prior art, display panel provided by the invention and display device at least realize following beneficial effect
Fruit:
In display panel provided by the invention and display device, film transistor device layer includes semiconductor layer, semiconductor
The material of layer includes metal oxide, includes at least one layer of insulating layer between semiconductor layer and first electrode layer, in other words, this is extremely
A few layer insulating is made in the subsequent technique of semiconductor layer.It is provided at least in at least one layer insulating layer
One groove, groove is arranged around viewing area, and groove surfaces are provided with the first barrier layer.When the steam in the display panel external world
When entering with substances such as oxygen by least one layer of insulating layer, groove can be encountered, and groove surfaces have the first barrier layer, it is recessed
Slot and the first barrier layer can obstruct the substances such as steam and oxygen, prevent the substances such as steam and oxygen from further invading to display surface
Intralamellar part protects film layer structure of the groove in the side of viewing area.Compared with the existing technology, display panel water resistant can be improved
The ability that the substances such as vapour and oxygen corrode, improves the display quality of display panel, extends the service life of display panel.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Detailed description of the invention
It is combined in the description and the attached drawing for constituting part of specification shows the embodiment of the present invention, and even
With its explanation together principle for explaining the present invention.
Fig. 1 is a kind of the schematic diagram of the section structure for display panel that the prior art provides；
Fig. 2 is a kind of planar structure schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 3 is a kind of the schematic diagram of the section structure of first substrate in the display panel of Fig. 2 embodiment offer；
A kind of the schematic diagram of the section structure of first substrate in Fig. 4 display panel provided in an embodiment of the present invention；
Fig. 5 is the planar structure schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 6 is another the schematic diagram of the section structure of first substrate in display panel provided in an embodiment of the present invention；
Fig. 7 is another the schematic diagram of the section structure of first substrate in display panel provided in an embodiment of the present invention；
Fig. 8 is that the embodiment of the present invention provides the planar structure schematic diagram of another display panel；
Fig. 9 is a kind of the schematic diagram of the section structure for the display panel that Fig. 8 embodiment provides；
Figure 10 is that the embodiment of the present invention provides the planar structure schematic diagram of another display panel；
Figure 11 is a kind of the schematic diagram of the section structure of first substrate in the display panel of Figure 10 embodiment offer；
Figure 12 is another the schematic diagram of the section structure of first substrate in display panel provided in an embodiment of the present invention；
Figure 13 is another the schematic diagram of the section structure of first substrate in display panel provided in an embodiment of the present invention.
Figure 14 is a kind of schematic diagram of display device provided in an embodiment of the present invention.
Specific embodiment
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the present invention
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, then in subsequent attached drawing does not need that it is further discussed.
Incorporated by reference to referring to figs. 2 and 3, Fig. 2 is a kind of planar structure signal of display panel provided in an embodiment of the present invention
Figure, Fig. 3 are a kind of the schematic diagram of the section structure of first substrate in the display panel of Fig. 2 embodiment offer.It present embodiments provides
A kind of display panel has the viewing area AA and non-display area BB around viewing area AA, and display panel includes: first substrate 100,
First substrate 100 includes the first underlay substrate 10, the film transistor device layer 20, first electrode layer 30 set gradually, film
Transistor device layer 20 includes semiconductor layer 21, and the material of semiconductor layer 21 includes metal oxide；Semiconductor layer 21 and first
It include at least one layer of insulating layer 40 between electrode layer 30；Non-display area BB includes at least one groove 41, at least one groove 41
It is arranged at least one layer of insulating layer 40, groove 41 is arranged around viewing area AA；41 surface of groove is provided with the first barrier layer 42.
There is display panel provided in this embodiment viewing area AA and non-display area BB, viewing area AA to have display image letter
The function of breath, non-display area BB are arranged around viewing area AA, and non-display area BB does not have display function, are used for setting signal cabling
With the structures such as electronic component.
Display panel provided in this embodiment includes first substrate 100, and optionally, display panel can also include other knots
Structure.For example, display panel can also have the opposed base being oppositely arranged with first substrate in some optional implementations
Plate, counter substrate can be glass substrate, and counter substrate also can have the structures such as color blocking, electrode, and the present embodiment does not make this
Concrete restriction；In other optional implementations, display panel can be arranged with encapsulated layer, encapsulated layer in first substrate 100
Surface, for protecting the internal structure of first substrate 100.
In the present embodiment, first substrate 100 includes the first underlay substrate 10 of setting, and the material of the first underlay substrate 10 can
Think hard, such as is made using glass, or it is flexible, such as formed using plastic production, the present embodiment
This is not specifically limited.First substrate 100 further includes film transistor device layer 20, and film transistor device layer 20 includes half
Conductor layer 21, the material of semiconductor layer 21 includes metal oxide, such as the material of semiconductor layer 21 includes indium gallium zinc oxide.
IGZO is a kind of amorphous oxides containing indium, gallium and zinc, and carrier mobility is 20~30 times of amorphous silicon, can be mentioned significantly
High thin film transistor (TFT) improves the response speed of pixel to the charge-discharge velocity of pixel electrode, realizes faster refresh rate, while more
Fast response also substantially increases the line scanning rate of pixel.Multiple thin film transistor (TFT)s are provided in film transistor device layer 20
201, in addition to semiconductor layer 21, thin film transistor (TFT) 201 further includes grid 22, source electrode 23 and drain electrode 24.In the present embodiment, with grid
22 are arranged in semiconductor layer 21 is illustrated for the side of the first underlay substrate 10, in other optional implementations
In, it can be set in semiconductor layer 21 with grid 22 close to the side of the first underlay substrate 10, the present embodiment is not made this specifically
Limitation.First substrate 100 further includes first electrode layer 30, and first electrode layer 30 has the function of conduction, may include pixel electricity
Pole, public electrode or touch control electrode, the present embodiment are not specifically limited the specific structure and function of first motor layer 30.
It include at least one layer of insulation in display panel provided in this embodiment, between semiconductor layer 21 and first electrode layer 30
In 40, Fig. 3 of layer, only it is illustrated for including a layer insulating 40 between semiconductor layer 21 and first electrode layer 30, at it
It may include two layers or more layer insulatings in his optional implementation, between semiconductor layer 21 and first electrode layer 30.
Insulating layer 40 is arranged between semiconductor layer 21 and first electrode layer 30, according to the fabrication processing of first substrate 100, is serving as a contrast
After making semiconductor layer 21 on substrate 10, since the material of semiconductor layer 21 is metal oxide, in semiconductor layer 21
Latter made film layer generally formed a film using lower temperature, specifically, insulating layer 40 is formed a film using lower temperature, compactness is not
It is sufficient, more loose.In the present embodiment, at least one groove 41 is provided in insulating layer 40, groove 41 is arranged in non-display area BB,
And groove 41 is arranged around viewing area AA, and in addition to this, 41 surface of groove is provided with the first barrier layer 42.In Fig. 3, only with recessed
The quantity of slot 41 is one and is illustrated, and in other optional implementations, the quantity of groove 41 can for two or more
Multiple, the present embodiment is not specifically limited this.In Fig. 2 and Fig. 3, by the section of groove 41 be it is trapezoidal for be illustrated, can
Choosing, the section of groove can not be made to have for rectangle or other irregular figures, the present embodiment to the cross sectional shape of groove
Body limitation.First barrier layer 42 has the function of obstructing the substances such as steam and oxygen.Steam and oxygen outside display panel
After equal substances direction shown in the arrow a enters insulating layer 40, the substances such as part steam and oxygen can be hindered by groove 41 and first
Interlayer 42 is obstructed, and groove 41 and the first barrier layer 42 can travel further into display panel with resistance value steam and with substances such as oxygen
It is internal.
It should be noted that the technical solution in order to clearly illustrate the present embodiment, only illustrated in Fig. 2 and Fig. 3
The part-structure of display panel.Also, groove 41 is only illustrated in Fig. 2, the specific set-up mode of the first barrier layer 42 please join
Examine Fig. 3.
In display panel provided in this embodiment, film transistor device layer includes semiconductor layer, the material of semiconductor layer
It include at least one layer of insulating layer including metal oxide, between semiconductor layer and first electrode layer, in other words, at least one layer is exhausted
Edge layer is made in the subsequent technique of semiconductor layer.It is recessed that at least one is provided in at least one layer insulating layer
Slot, groove is arranged around viewing area, and groove surfaces are provided with the first barrier layer.When the steam and oxygen in the display panel external world
When equal substances pass through at least one layer of insulating layer and enter, groove can be encountered, and groove surfaces are with the first barrier layer, groove and the
One barrier layer can obstruct the substances such as steam and oxygen, prevent the substances such as steam and oxygen from further invading to display panel
Portion protects film layer structure of the groove in the side of viewing area.Compared with the existing technology, can be improved display panel water vapor and
The ability that the substances such as oxygen corrode, improves the display quality of display panel, extends the service life of display panel.
Optionally, please continue to refer to Fig. 2 and Fig. 3, the material of the first barrier layer 42 includes transparent metal oxide, transparent gold
Belong to oxide relative to metal, be usually not easy in air steam and oxygen react.For example, transparent metal oxide can be
Tin indium oxide or indium zinc oxide, wherein tin indium oxide (Indium Tin Oxide, abbreviation ITO) alternatively referred to as mixes tin oxidation
Indium is a kind of mixture of indium (III group) oxide (In2O3) and tin (IV race) oxide (SnO2), and tin indium oxide is in film
Be when shape it is transparent, it is electrically conductive, and relative to metal material, be not easy in air steam and oxygen react；Indium oxide
Zinc (Indium Zinc Oxide, abbreviation IZO), alternatively referred to as indium-doped zinc oxide, indium zinc oxide be in film-form it is transparent,
It is electrically conductive, and relative to metal material, be not easy in air steam and oxygen react.The material of first barrier layer 42 makes
With transparent metal oxide, for example, tin indium oxide or indium zinc oxide, can effectively obstruct the substances such as steam and oxygen.It can
Choosing, the first barrier layer 42 is identical with the material of first electrode layer 30, for example, the first barrier layer 42 and first electrode layer 30 can be with
During making first substrate 100, using same material, formation, the first barrier layer are made in same manufacturing process
42 are arranged in same film layer structure with first electrode layer 30.
It should be noted that groove is arranged in a insulating layer, groove in the display panel that Fig. 2 and Fig. 3 embodiment provides
Depth is the section of groove along perpendicular to the length on the first underlay substrate direction, the embodiment of the present invention to the depth of groove not
Make concrete restriction.Referring to FIG. 4, a kind of cross-section structure of first substrate shows in Fig. 4 display panel provided in an embodiment of the present invention
It is intended to.Fig. 4 is only illustrated on the basis of Fig. 3, and Fig. 4 has continued to use the appended drawing reference of Fig. 3.In Fig. 4, the depth of groove 41 is L,
Depth L is the section of groove 41 along perpendicular to the length on 10 direction of the first underlay substrate, insulating layer 40 with a thickness of D.Its
In, L≤D, as the depth L of groove 41 can be less than the thickness D of insulating layer 40, in addition, groove 41 may also extend through insulating layer
40, i.e. L=D；, the present embodiment is not specifically limited this.
In some optional implementations, referring to FIG. 5, Fig. 5 is another display surface provided in an embodiment of the present invention
The planar structure schematic diagram of plate.It should be noted that Fig. 5 is to look up display surface in the side perpendicular to the first underlay substrate
Obtained from plate.Wherein, the width of orthographic projection 411 of the groove on the first underlay substrate is d1, and 10 μm≤d1≤50um.Figure
In 5, groove has an orthographic projection 411 on the first underlay substrate, and the width of orthographic projection 411 is d1, the width of orthographic projection 411, that is, anti-
The width of groove is answered.In display panel provided in this embodiment, the width of groove is unsuitable too small, too small to be unfavorable for production first
Barrier layer 42, therefore the minimum value of d1 is 10 μm；In order to adapt to the demand of narrow frame, the face of the non-display area 20 of display panel
Product should not be too large, therefore the width of groove should not be too large, maximum value 50um.In display panel provided in this embodiment, groove
The width of orthographic projection 411 on the first underlay substrate is d1, and 10 μm≤d1≤50um, ensure that display panel obstructs steam
With the function of the substances such as oxygen, while meeting the needs of display panel narrow frame.
It should be noted that Fig. 2, Fig. 3 and Fig. 4 embodiment provide display panel in, with the quantity of groove be one into
Row explanation, optionally, the quantity of groove can be two or more, referring to FIG. 6, Fig. 6 is that the embodiment of the present invention provides
Display panel in first substrate another the schematic diagram of the section structure.Fig. 6 is only illustrated on the basis of fig. 4, and Fig. 6 is continued to use
The appended drawing reference of Fig. 4.In Fig. 6, the quantity of groove 41 is two, is arranged in insulating layer 40, the surface of groove 41 is provided with
First barrier layer 42.In display panel provided in this embodiment, there are two groove 41, groove surfaces settings for setting in insulating layer 40
There is the first barrier layer 42, the ability of the display panel barrier substances such as steam and oxygen can be improved, further increase display panel
Display quality, extend the service life of display panel.
In some optional implementations, referring to FIG. 7, Fig. 7 is in display panel provided in an embodiment of the present invention
Another the schematic diagram of the section structure of one substrate.Fig. 7 is only illustrated on the basis of Fig. 3, and Fig. 7 has continued to use the attached drawing mark of Fig. 3
Note.Fig. 7 embodiment provide display panel in, at least one groove include the first groove 411 and the second groove 412, at least one
Layer insulating includes the first insulating layer 401 and second insulating layer 402；First groove 411 is arranged in the first insulating layer 401, the
Two grooves 412 are arranged in second insulating layer 402.It should be noted that in Fig. 7, according to the manufacture craft of first substrate, second
Groove 412 is also filled in second groove 412 and to make in subsequent technique processing procedure in addition to surface is provided with the first barrier layer 42
The part-structure of first insulating layer 401.In the display panel that various embodiments of the present invention provide, groove is provided with the first resistance except surface
Except interlayer, the film layer structure formed in other materials, such as subsequent technique processing procedure, the present invention couple can also be filled in groove
This is not specifically limited.It include two layers in display panel provided in this embodiment, between semiconductor layer 21 and first electrode layer 30
Insulating layer, respectively the first insulating layer 401 and second insulating layer 402, in the first insulating layer 401 and second insulating layer 402 respectively
It is provided with a groove, respectively the first groove 411 and the second groove 412, groove surfaces are provided with the first barrier layer 42.Due to
It is provided with groove and the first barrier layer in dielectric layers, the substances such as steam and oxygen can be prevented from the first insulating layer 401
It is further invaded to display panel in second insulating layer 402, protects film layer structure of the groove in the side of viewing area.
Compared with the existing technology, the ability that the erosion of the substances such as display panel water vapor and oxygen can be improved improves the aobvious of display panel
Show quality, extends the service life of display panel.Furthermore the embodiment of the present application is by the first insulating layer 401 and second insulating layer 402
In groove shifted to install, while be located at the first groove 411 and the second groove 412 in the first barrier layer 42 be closely connect
The integral structure connect, this structure is relative to the knot formed directly through the first insulating layer 401 and the groove of second insulating layer 402
For structure, can significantly reduce the etching depth of groove so that the manufacture craft of groove can on existing panel
Manufacturing process is mutually compatible with, and without increasing new complex process steps, while relative to deeper groove, the embodiment of the present application also has
Have that preparation process is simple, production efficiency and the higher advantage of process yields；Moreover, the structure of the embodiment of the present application also have it is more bent
The steam of folding and oxygen transmission path further increase the substances such as steam and oxygen from the first insulating layer 401 and the second insulation
The difficulty to display panel is further invaded in layer 402, to further extend the service life of display panel.
In some optional implementations, Fig. 8 and Fig. 9 are please referred to, Fig. 8 is that the embodiment of the present invention provides another display
The planar structure schematic diagram of panel, Fig. 9 are a kind of the schematic diagram of the section structure for the display panel that Fig. 8 embodiment provides.In Fig. 2 and
On the basis for the display panel that Fig. 3 embodiment provides, display panel provided in this embodiment further includes the second substrate 200, the
Two substrates 200 are oppositely arranged with first substrate 100；Non-display area BB includes colloid 300, and colloid 300 is arranged around viewing area AA,
Colloid 300 is for bonding first substrate 100 and the second substrate 200；Groove 41 is arranged in first substrate 100 close to the second substrate
200 side surface includes part colloid 300 in groove 41.In display panel provided in this embodiment, the setting of groove 41 is the
One substrate 100 is close to a side surface of the second substrate 200, and groove can be with accommodating portion colloid 300, on the one hand, works as production
During display panel, if colloid coating is excessive, groove can accommodate extra colloid 300, colloid 300 is made to be not easy to overflow
To display panel；On the other hand, the thickness of the colloid 300 of 41 corresponding position of groove is larger, and colloid 300 usually has anti-
The function of electrostatic, thus thicker colloid 300 can have the technical effect of better antistatic.
Optionally, please continue to refer to Fig. 8 and Fig. 9, liquid crystal layer is provided between first substrate 100 and the second substrate 200
400, first substrate 100, the second substrate 200, colloid 300 form confined space for accommodating liquid crystal layer 400.The present embodiment provides
Display panel be liquid crystal display panel.
It should be noted that the technical solution in order to clearly illustrate the present embodiment, only illustrated in Fig. 8 and Fig. 9
The part-structure of display panel.Also, colloid 300 is only illustrated in Fig. 8, other in display panel provided in this embodiment are tied
The specific set-up mode of structure please refers to Fig. 9.
In some optional implementations, Figure 10 and Figure 11 are please referred to, Figure 10 is that the embodiment of the present invention provides another
The planar structure schematic diagram of display panel, Figure 11 are a kind of the schematic diagram of the section structure for the display panel that Figure 10 embodiment provides.
On the basis of the display panel that Fig. 2 and Fig. 3 embodiment of the present invention provides, in display panel provided in this embodiment,
At least one layer of insulating layer includes passivation layer 40a, and first substrate 100 further includes gate insulating layer 44 and the second electrode lay
50；Film transistor device layer 20 further includes grid layer 22, etching barrier layer 25, source-drain electrode layer in addition to including semiconductor layer 21
234；First underlay substrate 10, grid layer 22, gate insulating layer 44, semiconductor layer 21, etching barrier layer 25, source-drain electrode layer 234,
The second electrode lay 50, passivation layer 40a, first electrode layer 30 along the first underlay substrate 10 towards the direction of first electrode layer 30 successively
Setting；It wherein, include at least one groove 41 in passivation layer 40a, and groove surfaces are provided with the first barrier layer 42.Wherein,
The direction of first underlay substrate 10 towards first electrode layer 30 please refers to the Z-direction in Figure 10.
In display panel provided in this embodiment, semiconductor layer 21 is arranged in close to the first underlay substrate 10 in grid layer 22
Side, this structure are bottom gate thin film transistor.Source-drain electrode layer 234 may include source electrode and drain electrode (not illustrating in figure),
Part-structure in the second electrode lay 50 is electrically connected with drain electrode, and optionally, the second electrode lay 50 includes pixel electrode.Semiconductor layer
It include a layer insulating between 21 and first electrode layer 30, as passivation layer 40a, passivation layer 40a cover film transistor device
Layer 20 has the technical effect of insulation, and passivation layer 40a is usually arranged thicker, can provide a relatively flat table
Face is to be arranged first electrode layer 30.Passivation layer 40a is made in the subsequent technique of semiconductor layer 21, and material is more dredged
Pine.It is provided at least one groove 41 in passivation layer 40a, in the present embodiment, the quantity for only illustrating groove 41 is one
Situation.
In the present embodiment, groove 41 is arranged around viewing area AA, and 41 surface of groove is provided with the first barrier layer 42.When
When the substances such as the steam and oxygen in the display panel external world are entered by passivation layer 40a, groove 41, and 41 surface of groove can be encountered
With the first barrier layer 42, groove 41 and the first barrier layer 42 can obstruct the substances such as steam and oxygen, prevent steam and oxygen
Equal substances are further invaded to display panel, protect film layer structure of the groove 41 in the side AA of viewing area.Relative to
The prior art can be improved the ability of the substances such as display panel water vapor and oxygen erosion, improve the display quality of display panel,
Extend the service life of display panel.
Optionally, please continue to refer to Figure 10 and Figure 11, display panel further includes the second barrier layer 421, the second barrier layer 421
It is arranged between gate insulating layer 44 and passivation layer 40a；Second barrier layer 421 is arranged in non-display area BB, the second barrier layer 421
It is arranged around viewing area AA；First barrier layer 42 is identical as the material of first electrode layer 30, the second barrier layer 421 and second electrode
The material of layer 50 is identical.In display panel provided in this embodiment, it is provided with the second barrier layer 421, steam and oxygen can be prevented
The substances such as gas at the gap between gate insulating layer 44 and passivation layer 40a contact surface by entering inside display panel.First resistance
Interlayer 42 is identical as the material of first electrode layer 30, can be existed in the manufacturing process of production display panel using same material
The first barrier layer 42 and first electrode layer 30 are formed simultaneously in same manufacturing process；Second barrier layer 421 and the second electrode lay 50
Material it is identical, can production display panel manufacturing process in, using same material in same manufacturing process simultaneously shape
At the second barrier layer 421 and the second electrode lay 50.Display panel provided in this embodiment further increases display panel water vapor
The ability corroded with substances such as oxygen, improves the display quality of display panel, extends the service life of display panel.
It should be noted that the technical solution in order to clearly illustrate the present embodiment, only illustrated in Figure 10 and Figure 11
The part-structure of display panel.Also, the second barrier layer 421, display surface provided in this embodiment are only illustrated in Figure 10
The specific set-up mode of other structures please refers to Figure 11 in plate.
In some optional implementations, Figure 12 is please referred to, Figure 12 is in display panel provided in an embodiment of the present invention
Another the schematic diagram of the section structure of first substrate.On the basis of the display panel that Fig. 2 and Fig. 3 embodiment of the present invention provides,
In display panel provided in this embodiment, at least one layer of insulating layer includes interlayer insulating film 40b and passivation layer 40a, first substrate
100 further include buffer layer 11, gate insulating layer 26, the second electrode lay 50；It includes semiconductor layer that film transistor device layer 20, which removes,
It further include grid layer 22, source-drain electrode layer 234 outside 21；First underlay substrate 10, buffer layer 11, semiconductor layer 21, gate insulating layer
26, grid layer 22, interlayer insulating film 40b, the second electrode lay 50, source-drain electrode layer 234, passivation layer 40a, first electrode layer 30 are along
The direction of one underlay substrate 10 towards first electrode layer 30 is set gradually.Wherein, the first underlay substrate 10 is towards first electrode layer
30 direction please refers to the Z-direction in Figure 12.
In display panel provided in this embodiment, semiconductor layer 21 is arranged in far from the first underlay substrate 10 in grid layer 22
Side, this structure are top gate type thin film transistor.Source-drain electrode layer 234 may include source electrode and drain electrode (not illustrating in figure),
Part-structure in the second electrode lay 50 is electrically connected with drain electrode, and optionally, the second electrode lay 50 includes pixel electrode.In Figure 12,
Source-drain electrode layer 234 is electrically connected by the second electrode lay 50 with semiconductor layer 21, during making display panel, can be used
Intermediate tone mask version is formed simultaneously the second electrode lay 50 and source-drain electrode layer 234 in same manufacturing process.Semiconductor layer 21 and
It include dielectric layers between one electrode layer 30, as interlayer insulating film 40b and passivation layer 40a, interlayer insulating film 40b setting exist
Between grid layer 22 and source-drain electrode layer 234, there is the technical effect of insulation；Passivation layer 40a covers film transistor device layer 20,
Technical effect with insulation, and passivation layer 40a is usually arranged thicker, can provide a relatively flat surface to set
Set first electrode layer 30.It optionally, include at least one groove 41b in interlayer insulating film 40b.Optionally, it is wrapped in passivation layer 40a
Include at least one groove 41a.In Figure 12, only with the quantity of interlayer insulating film 40b further groove for one, passivation layer 40a further groove
Quantity be one for be illustrated, optionally, in interlayer insulating film 40b or the quantity of passivation layer 40a further groove can be with
For two or more.
In the present embodiment, interlayer insulating film 40b and passivation layer 40a are made in the subsequent technique of semiconductor layer 21
, material is more loose.Optionally, at least one groove 41 is respectively arranged in interlayer insulating film 40b and passivation layer 40a,
Groove 41 is arranged around viewing area AA, and 41 surface of groove is provided with the first barrier layer 42.When the steam in the display panel external world
When entering with substances such as oxygen by interlayer insulating film 40b or passivation layer 40a, groove 41, and 41 surface of groove can be encountered
With the first barrier layer 42, groove 41 and the first barrier layer 42 can obstruct the substances such as steam and oxygen, prevent steam and oxygen
Equal substances are further invaded to display panel, protect film layer structure of the groove 41 in the side AA of viewing area.Relative to
The prior art, the embodiment of the present application can improve the ability of the substances such as display panel water vapor and oxygen erosion well, improve
The display quality of display panel extends the service life of display panel.Furthermore the embodiment of the present application is by interlayer insulating film 40b and blunt
The groove changed in layer 40a is shifted to install, while the first barrier layer 42 being located in groove 41a and groove 41b is closely to connect
The integral structure connect, this structure relative to formed directly run through interlayer insulating film 40b and passivation layer 40a groove structure and
Speech, can significantly reduce the etching depth of groove, so that the manufacture craft of groove can be with the technique on existing panel
Processing procedure is mutually compatible with, and without increasing new complex process steps, while the groove deeper relative to being prepared separately one, the application is real
Applying example also has preparation process simple, production efficiency and the higher advantage of process yields；Moreover, the structure of the embodiment of the present application
With more tortuous steam and oxygen transmission path, further increase the substances such as steam and oxygen from interlayer insulating film 40b and
The difficulty to display panel is further invaded in passivation layer 40a, to further extend the service life of display panel.
In some optional implementations, Figure 13 is please referred to, Figure 13 is in display panel provided in an embodiment of the present invention
Another the schematic diagram of the section structure of first substrate.On the basis of the display panel that Fig. 2 and Fig. 3 embodiment of the present invention provides,
In display panel provided in this embodiment, first substrate 100 further includes multiple Organic Light Emitting Diodes 60；Organic Light Emitting Diode
60 include the anode 61 being oppositely arranged and cathode 62 and the luminous material layer being held and mounted between anode 61 and cathode 62
63；First barrier layer 42 is identical as the material of anode 61.Wherein, anode 61 is electrically connected with the source electrode 23 of thin film transistor (TFT).Figure 13
In, the situation that the quantity of Organic Light Emitting Diode 60 is one is only illustrated, display panel provided in this embodiment is organic
Light emitting display panel, first substrate 100 include multiple Organic Light Emitting Diodes 60, organic light emitting display panel have self-luminous,
The advantages that wide viewing angle, high contrast, low power consumption, fast reaction speed.
The present invention also provides a kind of display device, the display panel provided including any of the above-described embodiment of the present invention
1000A.Figure 14 is please referred to, Figure 14 is a kind of schematic diagram of display device provided in an embodiment of the present invention.The display that Figure 14 is provided
Device 1000 includes the display panel 1000A that any of the above-described embodiment of the present invention provides.Figure 14 embodiment only takes the mobile phone as an example, right
Display device 1000 is illustrated, it is to be understood that display device provided in an embodiment of the present invention, can be computer, TV,
Other display devices having a display function such as display device for mounting on vehicle, the present invention are not specifically limited this.The embodiment of the present invention
The display device of offer, the beneficial effect with display panel provided in an embodiment of the present invention, can specifically refer to above-mentioned each reality
Example illustrating for display panel is applied, details are not described herein for the present embodiment.
Although some specific embodiments of the invention are described in detail by example, the skill of this field
Art personnel it should be understood that example above merely to being illustrated, the range being not intended to be limiting of the invention.The skill of this field
Art personnel are it should be understood that can without departing from the scope and spirit of the present invention modify to above embodiments.This hair
Bright range is defined by the following claims.
Claims (13)
1. a kind of display panel has viewing area and the non-display area around the viewing area characterized by comprising
First substrate, the first substrate include the first underlay substrate set gradually, film transistor device layer, first electrode
Layer, the film transistor device layer includes semiconductor layer, and the material of the semiconductor layer includes metal oxide；It is described partly to lead
It include at least one layer of insulating layer between body layer and the first electrode layer；
The non-display area includes at least one groove, at least one described groove is arranged at least one layer of insulating layer,
The groove is arranged around the viewing area；The groove surfaces are provided with the first barrier layer；
At least one described groove include the first groove and the second groove, it is described at least one layer insulating layer include the first insulating layer and
Second insulating layer；
First groove is arranged in the first insulating layer, and second groove is arranged in second insulating layer；
Groove in first insulating layer and the second insulating layer is shifted to install, and first groove and described is located at
First barrier layer in second groove is close-connected integral structure.
2. display panel according to claim 1, which is characterized in that the material of first barrier layer includes transparent metal
Oxide.
3. display panel according to claim 1, which is characterized in that first barrier layer and the first electrode layer
Material is identical.
4. display panel according to claim 1, which is characterized in that
The display panel further includes the second substrate, and the second substrate is oppositely arranged with the first substrate；
The non-display area includes colloid, and the colloid is arranged around the viewing area, and the colloid is for bonding described first
Substrate and the second substrate；
A side surface of the first substrate close to the second substrate is arranged in the groove, includes part institute in the groove
State colloid.
5. display panel according to claim 4, which is characterized in that
It is provided with liquid crystal layer between the first substrate and the second substrate, it is the first substrate, the second substrate, described
Colloid forms confined space for accommodating the liquid crystal layer.
6. display panel according to claim 1, which is characterized in that
At least one layer insulating layer includes passivation layer, and the first substrate further includes gate insulating layer and the second electrode lay；
The film transistor device layer further includes grid layer, etching barrier layer, source-drain electrode layer；
First underlay substrate, the grid layer, the gate insulating layer, the semiconductor layer, the etching barrier layer, institute
Source-drain electrode layer, the second electrode lay, the passivation layer, the first electrode layer are stated along described in the first underlay substrate direction
The direction of first electrode layer is set gradually；Wherein,
It include at least one described groove in the passivation layer.
7. display panel according to claim 6, which is characterized in that
The display panel further includes the second barrier layer, and second barrier layer is arranged in the gate insulating layer and the passivation
Between layer；
In the non-display area, second barrier layer is arranged around the viewing area for the second barrier layer setting；
First barrier layer is identical as the material of the first electrode layer, the material of the second barrier layer and the second electrode lay
It is identical.
8. display panel according to claim 1, which is characterized in that
At least one layer insulating layer includes interlayer insulating film and passivation layer, and the first substrate further includes that buffer layer, grid are exhausted
Edge layer, the second electrode lay；
The film transistor device layer further includes grid layer, source-drain electrode layer；
First underlay substrate, the buffer layer, the semiconductor layer, the gate insulating layer, the grid layer, the layer
Between insulating layer, the second electrode lay, the source-drain electrode layer, the passivation layer, the first electrode layer along first substrate
The direction of substrate towards the first electrode layer is set gradually.
9. display panel according to claim 8, which is characterized in that
It include at least one described groove in the interlayer insulating film.
10. display panel according to claim 8, which is characterized in that
It include at least one described groove in the passivation layer.
11. display panel according to claim 1, which is characterized in that
The width of orthographic projection of the groove on first underlay substrate is d1, and 10 μm≤d1≤50um.
12. display panel according to claim 1, which is characterized in that
The first substrate further includes multiple Organic Light Emitting Diodes；
The Organic Light Emitting Diode includes the anode and cathode being oppositely arranged；
First barrier layer is identical as the material of the anode.
13. a kind of display device, including -12 described in any item display panels according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710587700.9A CN107293593B (en) | 2017-07-18 | 2017-07-18 | Display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710587700.9A CN107293593B (en) | 2017-07-18 | 2017-07-18 | Display panel and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107293593A CN107293593A (en) | 2017-10-24 |
| CN107293593B true CN107293593B (en) | 2019-09-24 |
Family
ID=60101152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710587700.9A Active CN107293593B (en) | 2017-07-18 | 2017-07-18 | Display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107293593B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336207B (en) * | 2018-01-05 | 2019-07-23 | 佛山市国星半导体技术有限公司 | A kind of high reliability LED chip and preparation method thereof |
| CN108321180A (en) * | 2018-02-11 | 2018-07-24 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display device |
| CN108717957B (en) * | 2018-05-31 | 2021-01-15 | 上海天马微电子有限公司 | Organic light emitting display panel and organic light emitting display device |
| CN109103230B (en) * | 2018-08-27 | 2022-02-08 | 武汉天马微电子有限公司 | OLED display panel, manufacturing method of OLED display panel and display device |
| CN109192760A (en) * | 2018-08-31 | 2019-01-11 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and its manufacturing method |
| CN109523912B (en) * | 2018-12-13 | 2021-03-16 | 厦门天马微电子有限公司 | Display panel and display device |
| CN109755280B (en) * | 2019-01-10 | 2020-10-16 | 昆山国显光电有限公司 | Organic light-emitting display panel, preparation method, cathode mask plate and display device |
| CN109950200B (en) * | 2019-03-26 | 2021-04-30 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN109935601B (en) * | 2019-04-04 | 2021-01-26 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
| CN110311054A (en) * | 2019-07-16 | 2019-10-08 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof |
| CN110993814B (en) * | 2019-11-15 | 2021-09-03 | 深圳市华星光电半导体显示技术有限公司 | Display device and method for manufacturing the same |
| CN113377234B (en) * | 2021-06-29 | 2023-09-05 | 厦门天马微电子有限公司 | Touch substrate, touch display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710999A (en) * | 2004-06-17 | 2005-12-21 | 三星Sdi株式会社 | Electro-luminescent display device |
| CN1871690A (en) * | 2003-10-28 | 2006-11-29 | 株式会社半导体能源研究所 | Method of manufacturing semiconductor device |
| CN102941711A (en) * | 2006-11-17 | 2013-02-27 | 法国圣-戈班玻璃公司 | Electrode for an organic light-emitting device, acid etching thereof, and also organic light-emitting device incorporating it |
| CN105446031A (en) * | 2014-09-30 | 2016-03-30 | 群创光电股份有限公司 | Display panel and display device |
-
2017
- 2017-07-18 CN CN201710587700.9A patent/CN107293593B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1871690A (en) * | 2003-10-28 | 2006-11-29 | 株式会社半导体能源研究所 | Method of manufacturing semiconductor device |
| CN1710999A (en) * | 2004-06-17 | 2005-12-21 | 三星Sdi株式会社 | Electro-luminescent display device |
| CN102941711A (en) * | 2006-11-17 | 2013-02-27 | 法国圣-戈班玻璃公司 | Electrode for an organic light-emitting device, acid etching thereof, and also organic light-emitting device incorporating it |
| CN105446031A (en) * | 2014-09-30 | 2016-03-30 | 群创光电股份有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107293593A (en) | 2017-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107293593B (en) | Display panel and display device | |
| JP6845285B2 (en) | Liquid crystal display device | |
| CN103887440B (en) | Organic light emitting diode display and manufacture method thereof | |
| US8841666B2 (en) | Display device | |
| CN102854665B (en) | Display device and electronic equipment | |
| CN103943787B (en) | A kind of OLED display and preparation method thereof | |
| JP2017174811A (en) | Display device | |
| TWI473317B (en) | Flexible active device array substrate and organic electroluminescent device having the same | |
| WO2016176886A1 (en) | Flexible oled and manufacturing method therefor | |
| CN103872060B (en) | Array base palte and manufacture method thereof | |
| CN105097941B (en) | A kind of thin film transistor (TFT) and its manufacturing method, array substrate, display device | |
| CN109920818A (en) | Display panel and its manufacturing method, display device | |
| CN104659060A (en) | Array Substrate And Method Of Fabricating The Same | |
| CN110518053A (en) | Display base plate and preparation method thereof, display device | |
| CN110246879A (en) | A kind of organic light emitting display panel and device | |
| CN108288633A (en) | Organic light emitting display panel and display device | |
| KR102212764B1 (en) | Organic light emitting display device and method of manufacturing the same | |
| CN108598114A (en) | Organic light emitting display panel and preparation method thereof, display device | |
| CN109638078A (en) | Preparation method, TFT, OLED backboard and the display device of TFT | |
| CN109166880A (en) | Flexible OLED display panel and preparation method thereof | |
| CN110416257A (en) | Display panel back board structure, preparation method and top emission type display panel | |
| CN108550711A (en) | OLED device and its manufacturing method, OLED display | |
| CN108417580A (en) | Array substrate and preparation method thereof and display panel | |
| CN109390380A (en) | Display panel and preparation method thereof, display device | |
| CN108305879A (en) | Thin-film transistor array base-plate and production method and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |