CN104952791A - Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device - Google Patents

Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device Download PDF

Info

Publication number
CN104952791A
CN104952791A CN201510366825.XA CN201510366825A CN104952791A CN 104952791 A CN104952791 A CN 104952791A CN 201510366825 A CN201510366825 A CN 201510366825A CN 104952791 A CN104952791 A CN 104952791A
Authority
CN
China
Prior art keywords
layer
drain
source
counnter attack
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510366825.XA
Other languages
Chinese (zh)
Inventor
徐向阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201510366825.XA priority Critical patent/CN104952791A/en
Priority to PCT/CN2015/084866 priority patent/WO2016206150A1/en
Priority to US14/777,741 priority patent/US20160380239A1/en
Publication of CN104952791A publication Critical patent/CN104952791A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides a method for manufacturing an AMOLED (active matrix organic light emitting diode) display device and a structure of the AMOLED display device. According to the method for manufacturing the AMOLED display device, an inorganic membrane layer is deposited before a gate(3) is manufactured, plasma bombardment is performed, then a gate anti-attack layer (2) is formed, further, an organic membrane layer is deposited before a source/drain (71) and a data line (72) are manufactured, plasma bombardment is performed, then an etching resisting and source/drain anti-attack layer (6) is formed, so that the AMOLED display device has good external environment light reflection preventing effect, the display luminance of the AMOLED display device is improved, the service life of the AMOLED display device is prolonged, and the thickness and the manufacturing cost of the AMOLED display device are reduced. The structure of the AMOLED display device is provided with the gate anti-attack layer (2) and the etching resisting and source/drain anti-attack layer (6), thereby having good external environment light reflection preventing effect, higher display luminance, longer service life, smaller thickness and lower manufacturing cost.

Description

The manufacture method of displayer part and structure thereof
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of manufacture method and structure thereof of displayer part.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has self-luminous, driving voltage is low, luminous efficiency is high, the response time is short, definition and high, the nearly 180 ° of visual angles of contrast, serviceability temperature wide ranges, can realize the plurality of advantages such as Flexible Displays and large area total colouring, being known as by industry is the display unit having development potentiality most.
OLED display device can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and the large class of active array type OLED (Active Matrix OLED, AMOLED) two according to type of drive.Wherein, AMOLED has the pixel of the arrangement in array, and belong to initiatively display type, luminous efficacy is high, is typically used as the large scale display unit of high definition.
Initiatively organic light emitting display (AMOLED) is a kind of thin film light emitting device utilizing direct voltage drive, AMOLED Display Technique is different from traditional LCD display mode, without the need to backlight, adopt very thin coating of organic material and glass substrate, when have electric current by time, these organic materials will be luminous, and displayer part can do more frivolous, visible angle is larger, and significantly can save electric energy.
As shown in Figure 1, existing displayer part sets gradually usually from bottom to top: glass substrate 100, thin-film transistor (TFT) array layer 200, pixel electrode layer and anode layer 300, organic luminous layer 400, cathode layer 500 and encapsulation cover plate 600.Wherein, grid in tft array layer 200, data wire, with source/drain be metal level, the reflecting power of metal is stronger, and the anode layer 300 being located at the upper and lower both sides of organic luminous layer 400 respectively generally all adopts reflective or semi reflective material with cathode layer 500, simultaneously, in displayer part, the region relative with organic luminous layer 400 is open area, make external ambient light can enter displayer part and strong reflection occurs, affecting the display effect of displayer part.At present, the method solving the reflection of displayer part light is typically employed in a slice rotatory polarization sheet that glass substrate 100 or encapsulation cover plate 600 fit, as Fig. 1 illustrates, former polaroid 700 is fitted in glass substrate 100 lower surface, utilizes rotatory polarization sheet 700 to play anti-reaction.But the negative effect that laminating rotatory polarization sheet brings is: the display brightness of OLED display device reduces obviously, equal display brightness is had before realizing OLED display device and paster, then power consumption can corresponding increase, the increase of power consumption can bring again the significantly shortening in displayer part life-span, the thickness of whole displayer part too increase about 160 μm even more, in addition, the cost of manufacture that rotatory polarization sheet also can draw high displayer part is increased.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of displayer part, can under the prerequisite not increasing rotatory polarization sheet, displayer part is made to have the good effect preventing external ambient light from reflecting, improve the display brightness of displayer part, extend the useful life of displayer part, reduce thickness and the cost of manufacture of displayer part.
The present invention also aims to provide a kind of MOLED display device structure, have the good effect preventing external ambient light from reflecting, have higher display brightness and useful life, thickness is less, cost of manufacture is lower.
For achieving the above object, the invention provides a kind of manufacture method of displayer part, comprising:
Before making grid, deposit one deck inoranic membrane, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form the step of grid counnter attack layer;
And one deck inoranic membrane was deposited before making source/drain and data wire, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form etching and stop the step with source/drain counnter attack layer.
The manufacture method of described displayer part comprises the steps:
Step 1, provide a substrate, deposit one deck inoranic membrane on the substrate, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form grid counnter attack layer;
Step 2, on described grid counnter attack layer, deposit the first metal layer, and patterned process is carried out to this first metal layer, form grid;
Step 3, on described grid and grid counnter attack layer deposition of gate insulating barrier;
Step 4, on described gate insulator deposited semiconductor film, and patterned process is carried out to this semiconductor film, forms island active layer;
Step 5, on described island active layer and gate insulator, deposit one deck inoranic membrane, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form etching to stop and source/drain counnter attack layer, again patterned process is carried out to described etching stop and source/drain counnter attack layer, obtained the first via hole and the second via hole exposing described island active layer both sides respectively;
Step 6, to stop and depositing second metal layer on source/drain counnter attack layer in described etching, and patterned process is carried out to this second metal level, form source/drain and data wire, described source/drain contacts described island active layer respectively by the first via hole with the second via hole;
Step 7, described source/drain, data wire and etching stop with source/drain counnter attack layer on deposit passivation protection film, and patterned process is carried out to this passivation protection film, forms the 3rd via hole exposing part source/drain;
Step 8, on described passivation protection film deposit transparent electrode layer, and carry out patterned process to this transparent electrode layer, form pixel electrode layer, described pixel electrode layer is by the 3rd via hole contact portion source/drain;
Step 9, on described pixel electrode layer and passivation protection film pixel deposition separator, and patterned process is carried out to this pixel isolation layer, forms the opening exposing partial pixel electrode layer;
Step 10, employing evaporation process form organic luminous layer in described opening;
Step 11, on described organic luminous layer and pixel isolation layer, sputter layer of metal cathode layer;
Step 12, use encapsulation cover plate encapsulate.
The material of the inoranic membrane in described step 1 is silicon dioxide, and thickness is
The material of the first metal layer in described step 2 is one or more the combination in chromium, molybdenum, aluminium, copper, and thickness is
The material of the gate insulator in described step 3 is silica, silicon nitride or the combination of the two, and thickness is
In described step 4, the material of semiconductor film is the one in zinc oxide, indium-zinc oxide, zinc tin oxide, indium gallium zinc oxide, indium zirconium zinc oxide, and thickness is
The material of the inoranic membrane in described step 5 is silica, and thickness is
Carry out in described step 1 and step 5 that the gas that plasma bombardment process uses is nitrogen, oxygen or nitrogen dioxide;
In described step 6, the material of the second metal level is one or more the combination in chromium, molybdenum, aluminium, copper, and thickness is
In described step 7, the material of passivation protection film is silica, silicon nitride or the combination of the two, and thickness is
In described step 8, the material of transparent electrode layer is tin indium oxide or indium zinc oxide, and thickness is
The material of the pixel isolation layer in described step 9 is silica, and thickness is
Described step 10 organic luminous layer comprises hole injection layer, hole transmission layer, luminous material layer, electron transfer layer and electron injecting layer.
Present invention also offers a kind of displayer part structure, comprise array base palte and be located at passivation protection film, pixel electrode layer, pixel isolation layer, organic luminous layer, metal cathode layer and the encapsulation cover plate on described array base palte from bottom to top successively;
Described array base palte is provided with shaggy gate metal counnter attack layer under the gate, has shaggy etching stop and source/drain counnter attack layer in source/drain and data wire.
Described array base palte comprises substrate, the grid counnter attack layer be located on described substrate, the grid be located on described grid counnter attack layer, be located at the gate insulator on described grid and grid counnter attack layer, the island active layer be located at above described grid on described gate insulator, be located at etching stop on described island active layer and gate insulator and source/drain counnter attack layer and be located at described etching and stop and the source/drain on source/drain counnter attack layer and data wire; Described etching stops and source/drain counnter attack layer has the first via hole and the second via hole that expose described island active layer both sides respectively; Described source/drain contacts described island active layer respectively by the first via hole with the second via hole;
Described passivation protection film is located at source/drain, data wire and etching and is stopped with on source/drain counnter attack layer, and has the 3rd via hole exposing part source/drain;
Described pixel electrode layer is located on described passivation protection film, and by the 3rd via hole contact portion source/drain;
Described pixel isolation layer is located on pixel electrode layer, and has the opening exposing partial pixel electrode layer;
Described organic luminous layer is located in the opening on described pixel electrode layer;
Described metal cathode layer is located on described organic luminous layer and pixel isolation layer.
The material of described gate metal counnter attack layer is silicon dioxide, and thickness is
Described etching stops that with the material of source/drain counnter attack layer be silica, and thickness is
Beneficial effect of the present invention: the manufacture method of a kind of displayer part provided by the invention, by depositing one deck inoranic membrane before making grid, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form grid counnter attack layer, and one deck inoranic membrane was deposited before making source/drain and data wire, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form etching to stop and source/drain counnter attack layer, can under the prerequisite not increasing rotatory polarization sheet, displayer part is made to have the good effect preventing external ambient light from reflecting, improve the display brightness of displayer part, extend the useful life of displayer part, reduce thickness and the cost of manufacture of displayer part.A kind of displayer part structure provided by the invention, its array base palte arranges shaggy gate metal counnter attack layer under the gate, have shaggy etching in source/drain and data wire to stop and source/drain counnter attack layer, there is the good effect preventing external ambient light from reflecting, have higher display brightness and useful life, thickness is less, cost of manufacture is lower.
In order to further understand feature of the present invention and technology contents, refer to following detailed description for the present invention and accompanying drawing, but accompanying drawing only provides reference and explanation use, is not used for being limited the present invention.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, by the specific embodiment of the present invention describe in detail, will make technical scheme of the present invention and other beneficial effect apparent.
In accompanying drawing,
Fig. 1 is the structural representation of existing displayer part;
Fig. 2 is the flow chart of the manufacture method of displayer part of the present invention;
Fig. 3 is the schematic diagram of the step 1 of the manufacture method of displayer part of the present invention;
Fig. 4 is the schematic diagram of the step 2 of the manufacture method of displayer part of the present invention;
Fig. 5 is the schematic diagram of the step 3 of the manufacture method of displayer part of the present invention;
Fig. 6 is the schematic diagram of the step 4 of the manufacture method of displayer part of the present invention;
Fig. 7 is the schematic diagram of the step 5 of the manufacture method of displayer part of the present invention;
Fig. 8 is the schematic diagram of the step 6 of the manufacture method of displayer part of the present invention;
Fig. 9 is the schematic diagram of the step 7 of the manufacture method of displayer part of the present invention;
Figure 10 is the schematic diagram of the step 8 of the manufacture method of displayer part of the present invention;
Figure 11 is the schematic diagram of the step 9 of the manufacture method of displayer part of the present invention;
Figure 12 is the schematic diagram of the step 10 of the manufacture method of displayer part of the present invention;
Figure 13 is the schematic diagram of the step 11 of the manufacture method of displayer part of the present invention;
Figure 14 is the schematic diagram of the step 12 of the manufacture method of displayer part of the present invention and the structural representation of displayer part of the present invention.
Embodiment
For further setting forth the technological means and effect thereof that the present invention takes, be described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
Refer to Fig. 2, first the present invention provides a kind of manufacture method of displayer part, comprises the steps:
Step 1, as shown in Figure 3, provide a substrate 1, described substrate 1 deposits the inoranic membrane that one deck film quality is loose, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form grid counnter attack layer 2.
Particularly, the described substrate 1 in this step 1 is preferably glass substrate; The material of described inoranic membrane is silicon dioxide (SiO 2), thickness is carrying out the gas that plasma bombardment process uses is nitrogen (N 2), oxygen (O 2) or nitrogen dioxide (NO 2).
Step 2, as shown in Figure 4, described grid counnter attack layer 2 deposits the first metal layer, and patterned process is carried out to this first metal layer, form grid 3.
Particularly, the material of the first metal layer in this step 2 is one or more the combination in chromium (Cr), molybdenum (Mo), aluminium (Al), copper (Cu), and thickness is described patterned process is by resist coating (PR), exposure, development, wet etching, realize with the technical process of stripping photoresist.
Step 3, as shown in Figure 5, deposition of gate insulating barrier 4 on described grid 3 and grid counnter attack layer 2.
Particularly, the material of gate insulator 4 described in this step 3 is silica (SiO x), silicon nitride (SiN x) or the two combination, thickness is
Step 4, as shown in Figure 6, deposited semiconductor film on described gate insulator 4, and patterned process is carried out to this semiconductor film, form island active layer 5.
Particularly, the material of semiconductor film described in this step 4 is the one in zinc oxide (ZnO), indium-zinc oxide (InZnO), zinc tin oxide (ZnSnO), indium gallium zinc oxide (CaInZnO), indium zirconium zinc oxide (ZrInZnO), and thickness is described patterned process is by resist coating, exposure, development, wet etching, realize with the technical process of stripping photoresist.
Step 5, as shown in Figure 7, described island active layer 5 with gate insulator 4 deposit one deck inoranic membrane, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form etching to stop and source/drain counnter attack layer 6, again patterned process is carried out to described etching stop and source/drain counnter attack layer 6, obtained the first via hole 61 and the second via hole 62 exposing described island active layer 5 both sides respectively.
Particularly, in this step 5, the material of inoranic membrane is silica, and thickness is carry out that the gas that plasma bombardment process uses is nitrogen, oxygen or nitrogen dioxide.
Described etching to be stopped and source/drain counnter attack layer 6 carries out patterned process and realized by the technical process of resist coating, exposure, development, dry ecthing and stripping photoresist.
Step 6, as shown in Figure 8, stop and depositing second metal layer on source/drain counnter attack layer 6 in described etching, and patterned process is carried out to this second metal level, form source/drain 71 and data wire 72, described source/drain 71 contacts described island active layer 5 respectively by the first via hole 61 with the second via hole 62.
Particularly, in this step 6, the material of the second metal level is one or more the combination in chromium, molybdenum, aluminium, copper, and thickness is described patterned process is by resist coating, exposure, development, wet etching, realize with the technical process of stripping photoresist.
Step 7, as shown in Figure 9, described source/drain 71, data wire 72 and etching stop with source/drain counnter attack layer 6 on deposit passivation protection film 8, and patterned process is carried out to this passivation protection film 8, forms the 3rd via hole 81 exposing part source/drain 71.
Particularly, in this step 7, the material of passivation protection film 8 is silica, silicon nitride or the combination of the two, and thickness is described patterned process is by resist coating, exposure, development, dry ecthing, realize with the technical process of stripping photoresist.
Step 8, as shown in Figure 10, deposit transparent electrode layer on described passivation protection film 8, and patterned process is carried out to this transparent electrode layer, form pixel electrode layer 9, described pixel electrode layer 9 is by the 3rd via hole 81 contact portion source/drain 71.
Particularly, in this step 8, the material of transparent electrode layer is tin indium oxide (ITO) or indium zinc oxide (IZO), and thickness is carry out patterned process to described transparent electrode layer, the technical process forming pixel electrode layer 9 is: resist coating, exposure, development, wet etching and stripping photoresist.
Step 9, as shown in figure 11, at described pixel electrode layer 9 and pixel deposition separator 10 on passivation protection film 8, and carries out patterned process to this pixel isolation layer 10, forms the opening 101 exposing partial pixel electrode layer 9.
Particularly, the material of the pixel isolation layer 10 in this step 9 is silica, and thickness is described patterned process is by resist coating, exposure, development, wet etching, realize with the technical process of stripping photoresist.
Step 10, as shown in figure 12, adopts evaporation process to form organic luminous layer 11 in described opening 101.
Particularly, described organic luminous layer 11 comprises again hole injection layer, hole transmission layer, luminous material layer, electron transfer layer and electron injecting layer.
Step 11, as shown in figure 13, described organic luminous layer 11 with pixel isolation layer 10 sputter layer of metal cathode layer 12.
Step 12, as shown in figure 14, uses encapsulation cover plate 13 to encapsulate.
The manufacture method of displayer part of the present invention stops and source/drain counnter attack layer 6 with etching owing to having made grid counnter attack layer 2, scattering can be carried out to the light entered into by external environment condition in displayer part in the two coarse surface, prevent the reflection of grid 3, source/drain 71, data wire 72, pixel electrode layer 9 and metal cathode layer 12 pairs of external ambient light, thus making displayer part have higher display brightness and useful life, thickness is less, cost of manufacture is lower.
On the basis of the manufacture method of above-mentioned displayer part; the present invention also provides a kind of structure of displayer part; as shown in figure 14, comprise array base palte and be located at passivation protection film 8, pixel electrode layer 9, pixel isolation layer 10, organic luminous layer 11, metal cathode layer 12 and the encapsulation cover plate 13 on described array base palte from bottom to top successively.Described array base palte has shaggy gate metal counnter attack layer 2 at grid 3, has shaggy etching stop and source/drain counnter attack layer 6 at source/drain 71 and data wire 72.
Particularly, described array base palte comprises substrate 1, the grid counnter attack layer 2 be located on described substrate 1, the grid 3 be located on described grid counnter attack layer 2, the gate insulator 4 be located on described grid 3 and grid counnter attack layer 2, the island active layer 5 be located at above described grid 3 on described gate insulator 4, is located at described island active layer 5 and the etching stop on gate insulator 4 and source/drain counnter attack layer 6 and is located at described etching and stop and source/drain 71 on source/drain counnter attack layer 6 and data wire 72; Described etching stops and source/drain counnter attack layer 6 has the first via hole 61 and the second via hole 62 exposing described island active layer 5 both sides respectively; Described source/drain 71 contacts described island active layer 5 respectively by the first via hole 61 with the second via hole 62.
Described passivation protection film 8 is located at source/drain 71, data wire 72 and etching and is stopped with on source/drain counnter attack layer 6, and has the 3rd via hole 81 exposing part source/drain 71; Described pixel electrode layer 9 is located on described passivation protection film 8, and by the 3rd via hole 81 contact portion source/drain 71; Described pixel isolation layer 10 is located on pixel electrode layer 9, and has the opening 101 exposing partial pixel electrode layer 9; Described organic luminous layer 11 is located in the opening 101 on described pixel electrode layer 9; Described metal cathode layer 12 is located at described organic luminous layer 11 with on pixel isolation layer 10.
The material of described gate metal counnter attack layer 2 is silicon dioxide, and thickness is
Described etching stops that with the material of source/drain counnter attack layer 6 be silica, and thickness is
Displayer part of the present invention, stop and source/drain counnter attack layer 6 with etching owing to being provided with grid counnter attack layer 2, scattering can be carried out to the light entered into by external environment condition in displayer part in the two coarse surface, prevent the reflection of grid 3, source/drain 71, data wire 72, pixel electrode layer 9 and metal cathode layer 12 pairs of external ambient light, thus making displayer part have higher display brightness and useful life, thickness is less, cost of manufacture is lower.
In sum, the manufacture method of displayer part of the present invention, by depositing one deck inoranic membrane before making grid, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form grid counnter attack layer, and one deck inoranic membrane was deposited before making source/drain and data wire, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form etching to stop and source/drain counnter attack layer, can under the prerequisite not increasing rotatory polarization sheet, displayer part is made to have the good effect preventing external ambient light from reflecting, improve the display brightness of displayer part, extend the useful life of displayer part, reduce thickness and the cost of manufacture of displayer part.Displayer part structure of the present invention, its array base palte arranges shaggy gate metal counnter attack layer under the gate, have shaggy etching in source/drain and data wire to stop and source/drain counnter attack layer, there is the good effect preventing external ambient light from reflecting, have higher display brightness and useful life, thickness is less, cost of manufacture is lower.
The above, for the person of ordinary skill of the art, can make other various corresponding change and distortion according to technical scheme of the present invention and technical conceive, and all these change and be out of shape the protection range that all should belong to the claims in the present invention.

Claims (10)

1. a manufacture method for displayer part, is characterized in that, comprising:
Deposition one deck inoranic membrane before making grid (3), and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form the step of grid counnter attack layer (2);
And one deck inoranic membrane was deposited before making source/drain (71) with data wire (72), and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form etching and stop the step with source/drain counnter attack layer (6).
2. the manufacture method of displayer part as claimed in claim 1, is characterized in that, comprise the steps:
Step 1, provide a substrate (1), at described substrate (1) upper deposition one deck inoranic membrane, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form grid counnter attack layer (2);
Step 2, on described grid counnter attack layer (2), deposit the first metal layer, and patterned process is carried out to this first metal layer, form grid (3);
Step 3, at the upper deposition of gate insulating barrier (4) of described grid (3) and grid counnter attack layer (2);
Step 4, at the upper deposited semiconductor film of described gate insulator (4), and patterned process is carried out to this semiconductor film, form island active layer (5);
Step 5, deposit one deck inoranic membrane described island active layer (5) and gate insulator (4) are upper, and plasma bombardment process is carried out to this inoranic membrane, make its surface roughening, form etching to stop and source/drain counnter attack layer (6), again patterned process is carried out to described etching stop and source/drain counnter attack layer (6), obtained the first via hole (61) and the second via hole (62) exposing described island active layer (5) both sides respectively;
Step 6, stop the upper depositing second metal layer with source/drain counnter attack layer (6) in described etching, and patterned process is carried out to this second metal level, form source/drain (71) and data wire (72), described source/drain (71) contacts described island active layer (5) respectively by the first via hole (61) with the second via hole (62);
Step 7, described source/drain (71), data wire (72) and etching stop with source/drain counnter attack layer (6) on deposit passivation protection film (8), and patterned process is carried out to this passivation protection film (8), form the 3rd via hole (81) exposing part source/drain (71);
Step 8, at the upper deposit transparent electrode layer of described passivation protection film (8), and patterned process is carried out to this transparent electrode layer, form pixel electrode layer (9), described pixel electrode layer (9) is by the 3rd via hole (81) contact portion source/drain (71);
Step 9, at the upper pixel deposition separator (10) of described pixel electrode layer (9) and passivation protection film (8), and patterned process is carried out to this pixel isolation layer (10), form the opening (101) exposing partial pixel electrode layer (9);
Step 10, employing evaporation process form organic luminous layer (11) in described opening (101);
Step 11, sputter layer of metal cathode layer (12) described organic luminous layer (11) and pixel isolation layer (10) are upper;
Step 12, use encapsulation cover plate (13) encapsulate.
3. the manufacture method of displayer part as claimed in claim 2, it is characterized in that, the material of the inoranic membrane in described step 1 is silicon dioxide, and thickness is
4. the manufacture method of displayer part as claimed in claim 2, it is characterized in that, the material of the inoranic membrane in described step 5 is silica, and thickness is
5. the manufacture method of displayer part as claimed in claim 2, is characterized in that, carries out that the gas that plasma bombardment process uses is nitrogen, oxygen or nitrogen dioxide in described step 1 and step 5.
6. the manufacture method of displayer part as claimed in claim 2, it is characterized in that, the material of the first metal layer in described step 2 is one or more the combination in chromium, molybdenum, aluminium, copper, and thickness is
The material of the gate insulator (4) in described step 3 is silica, silicon nitride or the combination of the two, and thickness is
In described step 4, the material of semiconductor film is the one in zinc oxide, indium-zinc oxide, zinc tin oxide, indium gallium zinc oxide, indium zirconium zinc oxide, and thickness is
In described step 6, the material of the second metal level is one or more the combination in chromium, molybdenum, aluminium, copper, and thickness is
In described step 7, the material of passivation protection film (8) is silica, silicon nitride or the combination of the two, and thickness is
In described step 8, the material of transparent electrode layer is tin indium oxide or indium zinc oxide, and thickness is
The material of the pixel isolation layer (10) in described step 9 is silica, and thickness is
Described step 10 organic luminous layer (11) comprises hole injection layer, hole transmission layer, luminous material layer, electron transfer layer and electron injecting layer.
7. a displayer part structure, it is characterized in that, comprise array base palte and be located at passivation protection film (8), pixel electrode layer (9), pixel isolation layer (10), organic luminous layer (11), metal cathode layer (12) and the encapsulation cover plate (13) on described array base palte from bottom to top successively;
Described array base palte has shaggy gate metal counnter attack layer (2) at grid (3), has shaggy etching stop and source/drain counnter attack layer (6) at source/drain (71) and data wire (72).
8. displayer part structure as claimed in claim 7, it is characterized in that, described array base palte comprises substrate (1), be located at the grid counnter attack layer (2) on described substrate (1), be located at the grid (3) on described grid counnter attack layer (2), be located at the gate insulator (4) on described grid (3) and grid counnter attack layer (2), the island active layer (5) on described gate insulator (4) is located in described grid (3) top, be located at described island active layer (5) and the etching stop on gate insulator (4) and source/drain counnter attack layer (6), and be located at described etching stop and the source/drain (71) on source/drain counnter attack layer (6) and data wire (72), described etching stops and source/drain counnter attack layer (6) has the first via hole (61) and the second via hole (62) that expose described island active layer (5) both sides respectively, described source/drain (71) contacts described island active layer (5) respectively by the first via hole (61) with the second via hole (62),
Described passivation protection film (8) is located at source/drain (71), data wire (72) and etching and is stopped with on source/drain counnter attack layer (6), and has the 3rd via hole (81) exposing part source/drain (71);
Described pixel electrode layer (9) is located on described passivation protection film (8), and by the 3rd via hole (81) contact portion source/drain (71);
Described pixel isolation layer (10) is located on pixel electrode layer (9), and has the opening (101) exposing partial pixel electrode layer (9);
Described organic luminous layer (11) is located in the opening (101) on described pixel electrode layer (9);
Described metal cathode layer (12) is located at described organic luminous layer (11) with on pixel isolation layer (10).
9. displayer part structure as claimed in claim 8, it is characterized in that, the material of described gate metal counnter attack layer (2) is silicon dioxide, and thickness is
10. displayer part structure as claimed in claim 8, is characterized in that, described etching stops that with the material of source/drain counnter attack layer (6) be silica, and thickness is
CN201510366825.XA 2015-06-26 2015-06-26 Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device Pending CN104952791A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201510366825.XA CN104952791A (en) 2015-06-26 2015-06-26 Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device
PCT/CN2015/084866 WO2016206150A1 (en) 2015-06-26 2015-07-23 Structure and manufacturing method of amoled display device
US14/777,741 US20160380239A1 (en) 2015-06-26 2015-07-23 Method for manufacturing amoled display device and structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510366825.XA CN104952791A (en) 2015-06-26 2015-06-26 Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device

Publications (1)

Publication Number Publication Date
CN104952791A true CN104952791A (en) 2015-09-30

Family

ID=54167354

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510366825.XA Pending CN104952791A (en) 2015-06-26 2015-06-26 Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device

Country Status (3)

Country Link
US (1) US20160380239A1 (en)
CN (1) CN104952791A (en)
WO (1) WO2016206150A1 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106292102A (en) * 2016-08-12 2017-01-04 京东方科技集团股份有限公司 A kind of display floater and display
CN106684095A (en) * 2016-10-31 2017-05-17 京东方科技集团股份有限公司 Array substrate and preparation method thereof, and display device
CN106953025A (en) * 2017-02-22 2017-07-14 信利（惠州）智能显示有限公司 The manufacture method of organic light-emitting display device
WO2018032918A1 (en) * 2016-08-19 2018-02-22 京东方科技集团股份有限公司 Thin film transistor and manufacturing method thereof, display substrate, and display device
WO2018153036A1 (en) * 2017-02-22 2018-08-30 京东方科技集团股份有限公司 Display screen and manufacturing method therefor, and display apparatus
CN109103205A (en) * 2018-08-21 2018-12-28 深圳市华星光电技术有限公司 A kind of array substrate and its manufacturing method
CN109148484A (en) * 2018-08-29 2019-01-04 京东方科技集团股份有限公司 Array substrate and preparation method thereof, display device
WO2019095214A1 (en) * 2017-11-16 2019-05-23 深圳市柔宇科技有限公司 Tft array structure and binding region thereof, and method for manufacturing binding region
CN109873002A (en) * 2019-02-26 2019-06-11 武汉华星光电半导体显示技术有限公司 The manufacturing method of array substrate and array substrate
CN110993622A (en) * 2019-12-13 2020-04-10 Tcl华星光电技术有限公司 Array substrate, preparation method thereof and display panel
CN111026289A (en) * 2019-11-29 2020-04-17 北京空间技术研制试验中心 Man-machine interaction terminal for manned spacecraft
US11342540B2 (en) 2017-01-24 2022-05-24 Huawei Technologies Co., Ltd. AMOLED display panel that includes a diffusion film, display panel production method, and display apparatus
CN115268156A (en) * 2022-08-26 2022-11-01 昆山龙腾光电股份有限公司 Array substrate and manufacturing method thereof, liquid crystal display panel and touch display device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107390444B (en) * 2017-09-06 2024-03-29 京东方科技集团股份有限公司 Array substrate, manufacturing method thereof and display device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1646977A (en) * 2002-04-12 2005-07-27 西铁城时计株式会社 Liquid crystal display panel
CN1779922A (en) * 2004-11-26 2006-05-31 上海华虹Nec电子有限公司 Etching method for contact hole for imaging sensor
CN1826541A (en) * 2003-07-24 2006-08-30 日本瑞翁株式会社 Reflection preventing molding and method of manufacturing the same
CN101487904A (en) * 2008-01-15 2009-07-22 财团法人工业技术研究院 Anti-reflection plate and production method for anti-reflection structure
CN101728447A (en) * 2008-10-14 2010-06-09 新日光能源科技股份有限公司 Solar device and making method thereof
CN103633112A (en) * 2012-08-22 2014-03-12 乐金显示有限公司 Organic light emitting diode display device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2822983B2 (en) * 1996-06-27 1998-11-11 日本電気株式会社 Transmissive liquid crystal display
KR100845557B1 (en) * 2002-02-20 2008-07-10 삼성전자주식회사 Active matrix organic light emitting device and method of manufacturing the same
US20080064131A1 (en) * 2006-09-12 2008-03-13 Mutual-Tek Industries Co., Ltd. Light emitting apparatus and method for the same
US8119490B2 (en) * 2008-02-04 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
KR20110057985A (en) * 2009-11-25 2011-06-01 삼성모바일디스플레이주식회사 Flexible display apparatus and method thereof
US9155158B2 (en) * 2011-04-01 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex, light-emitting element, display device, electronic device, and lighting device
KR101221921B1 (en) * 2011-07-05 2013-01-15 엘지전자 주식회사 Mobile terminal
US9000665B2 (en) * 2012-03-20 2015-04-07 Lg Display Co., Ltd. Organic light emitting diode display device and method of manufacturing the same
KR102086805B1 (en) * 2013-11-19 2020-03-09 엘지디스플레이 주식회사 Organic Light Emitting Display Device
JP6227396B2 (en) * 2013-12-20 2017-11-08 株式会社ジャパンディスプレイ THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME
KR102193091B1 (en) * 2014-05-22 2020-12-21 엘지디스플레이 주식회사 Flat Panel Display Having Low Reflective Black Matrix And Method For Manufacturing The Same
CN104637874A (en) * 2015-03-16 2015-05-20 京东方科技集团股份有限公司 Array base plate and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1646977A (en) * 2002-04-12 2005-07-27 西铁城时计株式会社 Liquid crystal display panel
CN1826541A (en) * 2003-07-24 2006-08-30 日本瑞翁株式会社 Reflection preventing molding and method of manufacturing the same
CN1779922A (en) * 2004-11-26 2006-05-31 上海华虹Nec电子有限公司 Etching method for contact hole for imaging sensor
CN101487904A (en) * 2008-01-15 2009-07-22 财团法人工业技术研究院 Anti-reflection plate and production method for anti-reflection structure
CN101728447A (en) * 2008-10-14 2010-06-09 新日光能源科技股份有限公司 Solar device and making method thereof
CN103633112A (en) * 2012-08-22 2014-03-12 乐金显示有限公司 Organic light emitting diode display device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106292102A (en) * 2016-08-12 2017-01-04 京东方科技集团股份有限公司 A kind of display floater and display
WO2018032918A1 (en) * 2016-08-19 2018-02-22 京东方科技集团股份有限公司 Thin film transistor and manufacturing method thereof, display substrate, and display device
US10707353B2 (en) 2016-08-19 2020-07-07 Boe Technology Group Co., Ltd. Thin film transistor, method for fabricating the same, display substrate and display device
CN106684095B (en) * 2016-10-31 2020-02-14 京东方科技集团股份有限公司 Array substrate, preparation method thereof and display device
CN106684095A (en) * 2016-10-31 2017-05-17 京东方科技集团股份有限公司 Array substrate and preparation method thereof, and display device
US11342540B2 (en) 2017-01-24 2022-05-24 Huawei Technologies Co., Ltd. AMOLED display panel that includes a diffusion film, display panel production method, and display apparatus
US10665822B2 (en) 2017-02-22 2020-05-26 Boe Technology Group Co., Ltd. Display screen and manufacturing method thereof and display device
CN106953025B (en) * 2017-02-22 2018-10-12 信利（惠州）智能显示有限公司 The manufacturing method of organic light-emitting display device
WO2018153036A1 (en) * 2017-02-22 2018-08-30 京东方科技集团股份有限公司 Display screen and manufacturing method therefor, and display apparatus
CN106953025A (en) * 2017-02-22 2017-07-14 信利（惠州）智能显示有限公司 The manufacture method of organic light-emitting display device
WO2019095214A1 (en) * 2017-11-16 2019-05-23 深圳市柔宇科技有限公司 Tft array structure and binding region thereof, and method for manufacturing binding region
CN109103205B (en) * 2018-08-21 2020-12-04 深圳市华星光电技术有限公司 Array substrate and manufacturing method thereof
WO2020037733A1 (en) * 2018-08-21 2020-02-27 深圳市华星光电技术有限公司 Array substrate and method for manufacture thereof
CN109103205A (en) * 2018-08-21 2018-12-28 深圳市华星光电技术有限公司 A kind of array substrate and its manufacturing method
CN109148484A (en) * 2018-08-29 2019-01-04 京东方科技集团股份有限公司 Array substrate and preparation method thereof, display device
CN109873002A (en) * 2019-02-26 2019-06-11 武汉华星光电半导体显示技术有限公司 The manufacturing method of array substrate and array substrate
CN111026289A (en) * 2019-11-29 2020-04-17 北京空间技术研制试验中心 Man-machine interaction terminal for manned spacecraft
CN110993622A (en) * 2019-12-13 2020-04-10 Tcl华星光电技术有限公司 Array substrate, preparation method thereof and display panel
WO2021114385A1 (en) * 2019-12-13 2021-06-17 Tcl华星光电技术有限公司 Array substrate and method for manufacturing same, and display panel
CN115268156A (en) * 2022-08-26 2022-11-01 昆山龙腾光电股份有限公司 Array substrate and manufacturing method thereof, liquid crystal display panel and touch display device
CN115268156B (en) * 2022-08-26 2023-08-29 昆山龙腾光电股份有限公司 Array substrate, manufacturing method thereof, liquid crystal display panel and touch display device

Also Published As

Publication number Publication date
US20160380239A1 (en) 2016-12-29
WO2016206150A1 (en) 2016-12-29

Similar Documents

Publication Publication Date Title
CN104952791A (en) Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device
US11152443B2 (en) Display panel having a storage capacitor and method of fabricating same
CN106653768B (en) TFT backboard and manufacturing method thereof
CN103000628B (en) Display device, array substrate and manufacture method of array substrate
CN105552249A (en) OLED display substrate, manufacturing method thereof and display device
CN104966723B (en) A kind of organic LED array substrate, preparation method and display device
CN104953044A (en) Flexible oled and manufacturing method thereof
CN104637438A (en) Flexible display and manufacturing method thereof
CN103258968B (en) A kind of active OLED display part and preparation method thereof
CN106229297B (en) The production method of AMOLED pixel-driving circuit
CN109378326A (en) Display panel and preparation method thereof
CN104538563B (en) Array base palte and preparation method thereof, display panel and display device
CN104241394A (en) Thin film transistor, corresponding manufacturing method of thin film transistor, display substrate and display device
CN109638020A (en) Display panel and preparation method thereof, display module
CN104716160A (en) Organic light emitting display device
CN103247762A (en) Active type OLED (organic light-emitting diode) display device and manufacturing method thereof
CN103500710A (en) Thin-film transistor production method, thin-film transistor and display equipment
CN203850301U (en) Active matrix organic electroluminescent device array substrate and display device
JP7015321B2 (en) Manufacturing method of TOC type OLED display and TOC type OLED display
CN104752345A (en) Thin film transistor array substrate and manufacturing method thereof
WO2016123979A1 (en) Thin-film transistor and manufacturing method therefor, array substrate and display device
CN104393026A (en) OLED display substrate, manufacturing method of OLED display substrate, and display device adopting OLED display substrate
WO2021139657A1 (en) Organic electroluminescent structure and manufacturing method therefor, and display apparatus
CN202957242U (en) Display device and array substrate
CN203218337U (en) Active OLED display device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150930