CN101487904A - Anti-reflection plate and production method for anti-reflection structure - Google Patents
Anti-reflection plate and production method for anti-reflection structure Download PDFInfo
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- CN101487904A CN101487904A CNA2008100031803A CN200810003180A CN101487904A CN 101487904 A CN101487904 A CN 101487904A CN A2008100031803 A CNA2008100031803 A CN A2008100031803A CN 200810003180 A CN200810003180 A CN 200810003180A CN 101487904 A CN101487904 A CN 101487904A
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Abstract
The invention discloses a method for manufacturing an anti-reflection configuration, comprising the following steps: firstly, an object to be treated is placed in a reaction area and a plasma source is placed in the reaction area; then the plasma source is dissociated under normal pressure to form plasma; and then the plasma is used for processing the surface of the object to be treated and a plurality of tiny prominent structures are formed on the surface of the object to be treated.
Description
Technical field
The present invention relates to the manufacture method of a kind of anti-reflection plate and anti-reflection structure thereof, and particularly relate to a kind of anti-reflection plate and manufacture method thereof with anti-reflection structure of nanoscale micro-protuberance.
Background technology
The antireflection technology can be widely used in each field, for example be used in the surface of eyeglass, CD, the perhaps display surface of TV, computer screen, digital camera, PDA, GPS and mobile phone, and the instrument panel surface of vehicle glass, aircraft and automobile, display case and living doctor use even.Object can reduce body surface source reflection caused to external world after the antireflection technical finesse dazzles light or ghost phenomenon, even the image performance or the efficiency of light energy utilization of existing product can significantly be improved with the utilization ratio that increases luminous energy etc. in the surface that is used for solar panels (solar collector).
At present main antireflection technology is to reduce light reflectivity at the film that substrate surface forms the multilayer different refractivity.Because existing thin-film technique need be carried out plated film mostly under vacuum environment, required technology is very time-consuming and with high costs.The yield that adds multilayer film is difficult to control, makes that the cost of products of using the antireflection technology is very high and can't popularize in masses.
Summary of the invention
In view of this fundamental purpose of the present invention is to provide the manufacture method of a kind of anti-reflection plate and anti-reflection structure thereof, utilizes atmospheric pressure plasma to form anti-reflection structure, and required material and the time cost of manufacturing anti-reflection plate greatly reduced.
According to the present invention, a kind of manufacture method of anti-reflection structure is proposed, comprise the following steps: at first, provide pending thing in reaction zone.Then, provide plasma to come from the reaction zone.Then, the plasma source that dissociates under normal pressure forms plasma.Then, with the surface of the pending thing of Cement Composite Treated by Plasma, and form a plurality of micro-protuberance structures in the surface of substrate.
According to the present invention, a kind of manufacture method of anti-reflection structure is proposed, comprise the following steps.At first, provide thing to be coated in reaction zone.Then, provide plasma to come from this reaction zone.Then, provide the plated film monomer in reaction zone.Then, the plasma source that dissociates under normal pressure forms plasma, makes plasma and plated film monomer reaction.Then, to form film, film has a plurality of micro-protuberance structures to the deposition plating monomer in thing to be coated surface.
According to the present invention, a kind of anti-reflection plate is proposed, have light entrance face, anti-reflection plate comprises that a plurality of micro-protuberance structures are arranged on the light entrance face.Micro-protuberance structure other mean breadth scope is between 10nm to 500nm.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, elaborate.
Description of drawings
Fig. 1 illustrates the formation flow chart of steps according to the anti-reflection plate of the embodiment of the invention one;
Fig. 2 A illustrates the synoptic diagram of pending thing and atmosphere plasma equipment;
Fig. 2 B illustrates the synoptic diagram through the anti-reflection plate of atmospheric plasma treatment;
Fig. 2 C illustrates the partial enlarged drawing of the anti-reflection plate of Fig. 2 B;
Fig. 3 A illustrate the PMMA substrate before Cement Composite Treated by Plasma with handle after light transmittance comparison diagram under different optical wavelength;
Fig. 3 B illustrate glass substrate before Cement Composite Treated by Plasma with handle after light transmittance comparison diagram under different optical wavelength;
Fig. 3 C illustrate polished silicon wafer not before Cement Composite Treated by Plasma with handle after light reflectivity comparison diagram under different optical wavelength;
Fig. 3 D illustrate the polished silicon wafer before Cement Composite Treated by Plasma with handle after light reflectivity comparison diagram under different optical wavelength;
Fig. 4 illustrates the formation flow chart of steps according to the anti-reflection plate of the embodiment of the invention two;
Fig. 5 A illustrates the synoptic diagram of thing to be coated and atmosphere plasma equipment;
Fig. 5 B illustrates the synoptic diagram with the formed anti-reflection plate of atmospheric pressure plasma plated film;
Fig. 5 C illustrates the partial enlarged drawing of the anti-reflection plate of Fig. 5 B; And
Fig. 6 illustrate glass substrate with different plated film monomers carry out before the plasma coating with plated film after light transmittance comparison diagram under different optical wavelength.
[main element symbol description]
2: plasma gun
4: plasma
5: platform
6: reaction zone
31,32,33,34,35,36,37a, 37b, 38,39a, 39b, 61,63,64: curve
100: pending thing
100a, 200a: anti-reflection plate
101,201: the surface
101a, 211: light entrance face
110,215: the micro-protuberance structure
200: thing to be coated
210: anti-reflection film
Embodiment
(atmospheric pressure plasma APP) is meant at an atmospheric pressure or the plasma that is produced under near an atmospheric state atmospheric pressure plasma.Compared to traditional vacuum plasma technology, the atmospheric plasma system has absolute advantage on cost.With equipment cost, it need not use costliness and heavy vacuum equipment; With regard to process aspect, element can not be subjected to the restriction of vacuum cavity, and can carry out the volume production program of continous way.These technical characteristics all can reduce the manufacturing cost of product effectively.
When ray cast was on any material, no matter whether transparent material is, some can be reflected.This reflex is because light transmits between medium on the interface refractive index (refractive index) at two kinds sharply changes institute and cause.
The employed antireflection technology of various embodiments of the present invention is the moth ocular structure (moth eye structure) that utilizes in the atmospheric pressure plasma formation bionics (Bionics).Because moth eye's cornea (cornea) surface has tiny projection, the yardstick of its repeated patterns (repeatingpattern) is less than the wavelength of light.When its yardstick during less than optical wavelength, will make light wave can't pick out this microstructure so that surface observation to refractive index be gradual change along depth direction, so can reduce differently to transmit that refractive index sharply changes the reflexes that caused on the medium interfaces.Various embodiments of the present invention promptly are to form the periodicity nanoscale micro-protuberance structure of similar moth eye, can significantly reduce the reflectivity of body surface.The generation type of anti-reflection structure disclosed by the invention below is described with different embodiment respectively.
Embodiment one
Please refer to Fig. 1, it illustrates the formation flow chart of steps according to the anti-reflection plate of the embodiment of the invention one.And please be simultaneously with reference to Fig. 2 A, it illustrates the synoptic diagram of pending thing and atmosphere plasma equipment.At first, shown in step 11, provide pending thing 100 in reaction zone 6, pending thing 100 is that exposing surface 101 is placed on the platform 5 and is positioned under the plasma gun 2.Pending thing 100 for example is a substrate in the present embodiment.The material of pending thing 100 can be glass or polymethylmethacrylate (polymethyl methacrylate, PMMA), with protection enclosing cover or glazing plate, or in order to make the Silicon Wafer of solar panels as display.
Then, shown in step 12, provide plasma to come from the reaction zone 6.Plasma source can be inert gas, air, nitrogen, oxygen, fluorocarbon gases and hydrocarbon gas etc. at least one of them.Wherein, inert gas for example is helium, neon, argon gas, krypton gas, and air for example is that (clean dryair, CDA), fluorocarbon gases for example is carbon tetrafluoride (CF to clean dry air
4), hydrocarbon gas for example is acetylene (C
2H
2).
In addition, technology of the present invention is not limited thereto.Carry out in the surface treatment process treating handled thing 100, the gas that uses as plasma source can with pending thing 100 collocation to obtain preferable effect.For example, when the material of pending thing 100 was glass or Silicon Wafer, plasma source preferably used argon gas (argon); When the material of pending thing 100 was PMMA, plasma source preferably used nitrogen (N
2) and carbon tetrafluoride (CF
4) mixed gas formed.
Then, shown in step 13, the pressure of keeping in the reaction zone 6 are normal pressure, and the pressure of just keeping in the reaction zone 6 drag about ear (torr) 760, apply the electric field back ejection formation plasma 4 that will dissociate as the gas of plasma source in plasma gun 2 in.But technology of the present invention is not limited thereto, and when the pressure in the reaction zone 6 is maintained between the 100torr to 760torr, still can reach effect of the present invention.
Then, shown in step 14, handle the surface of the substrate of pending thing 100 with plasma 4.Because the pressure in the reaction zone 6 maintains about atmospheric pressure, the plasma ion concentration that the plasma ion concentration ratio that produces in the reaction zone 6 produces under environment under low pressure is higher.Therefore, the ion bombardment that atmospheric pressure plasma produced, thermal effect and etching effect are also more obvious, therefore can form uniform micro-protuberance structure on the surface 101 of pending thing 100.
The above-mentioned steps 11～14 of present embodiment is preferably in an atmospheric pressure plasma system carries out, and does not limit the execution sequence of each step.Wherein, the atmospheric plasma system can produce one of them kind of atmospheric pressure plasma glow discharge (glow discharge), atmospheric pressure jet plasma (jet plasma), atmospheric pressure plasma torch (plasma torch), atmospheric pressure surface dielectric medium discharge different plasma kenels such as (surface dielectric barrier discharge).
Please refer to Fig. 2 B, it illustrates the synoptic diagram through the anti-reflection plate of atmospheric plasma treatment.Anti-reflection plate 100a after treatment, its light entrance face 101a has the micro-protuberance structure 110 of a plurality of periodicity nano-scale.Please refer to Fig. 2 C, it illustrates the partial enlarged drawing of the anti-reflection plate of Fig. 2 B.Preferably, the scope of 110 other mean breadths of micro-protuberance structure D1 is positioned between 10 nanometers (nm)～500nm, and micro-protuberance structure 110 with respect to the roughness of the surperficial 101a of anti-reflection plate 100a less than 100nm.In the present embodiment, roughness is that (atomic force microscopy AFM) measures with atomic force microscope.
Please refer to Fig. 3 A, its illustrate the PMMA substrate before Cement Composite Treated by Plasma with handle after light transmittance comparison diagram under different optical wavelength.As shown in Figure 3A, curve 31 is the light transmittance curve of the PMMA substrate before the Cement Composite Treated by Plasma, and curve 32 is the light transmittance curve of the PMMA substrate after the Cement Composite Treated by Plasma.By Fig. 3 A as can be seen, at the light transmittance of the scope of optical wavelength 450nm～750nm significant lifting is arranged through the PMMA substrate after the Cement Composite Treated by Plasma.
Please refer to Fig. 3 B, its illustrate glass substrate before Cement Composite Treated by Plasma with handle after light transmittance comparison diagram under different optical wavelength.Shown in Fig. 3 B, curve 33 is the light transmittance curve of the glass substrate before the Cement Composite Treated by Plasma, curve 34,35 is respectively the light transmittance curve that plasma gun carries out the glass substrate after the Cement Composite Treated by Plasma under glass substrate 7mm and the 5mm, and wherein the energy carried secretly apart from the shorter then plasma of substrate distance of plasma gun is higher.By Fig. 3 B as can be seen, the light transmittance through the glass substrate after the Cement Composite Treated by Plasma has significant lifting.
Please refer to Fig. 3 C and Fig. 3 D, its illustrate respectively not polishing and polished silicon wafer before Cement Composite Treated by Plasma with processing after light reflectivity comparison diagram under different optical wavelength.Shown in Fig. 3 C, curve 36 is the light reflectivity curve that does not polish monocrystalline silicon wafer crystal before the Cement Composite Treated by Plasma, curve 37a, 37b are the light reflectivity curve that does not polish monocrystalline silicon wafer crystal after the Cement Composite Treated by Plasma, and wherein curve 37a and 37b represent plasma gun and monocrystalline silicon wafer crystal surface distance 6mm and the 4mm reflectivity of the monocrystalline silicon wafer crystal of processing down respectively.Shown in Fig. 3 D, curve 38 is the light reflectivity curve of the polishing monocrystalline silicon wafer crystal before the Cement Composite Treated by Plasma, curve 39a, 39b are the light reflectivity curve of the polishing monocrystalline silicon wafer crystal after the Cement Composite Treated by Plasma, and wherein curve 39a and 39b represent plasma gun and monocrystalline silicon wafer crystal surface distance 6mm and the 4mm reflectivity of the monocrystalline silicon wafer crystal of processing down respectively.Can learn by Fig. 3 C and Fig. 3 D, can significantly reduce light reflectivity, make solar panels with the Silicon Wafer after plasma treated and can significantly promote the light utilization ratio through the Silicon Wafer after the Cement Composite Treated by Plasma.
Embodiment two
The difference of the anti-reflection plate of embodiment two and embodiment one, the anti-reflection plate that is embodiment two is that the mode with plasma coating forms the micro-protuberance structure under normal pressure.Please refer to Fig. 4, it illustrates the formation flow chart of steps according to the anti-reflection plate of the embodiment of the invention two.And please be simultaneously with reference to Fig. 5 A, it illustrates the synoptic diagram of substrate to be coated and atmosphere plasma equipment.
At first, shown in step 21, provide thing 200 to be coated in reaction zone 6, thing 200 exposing surfaces 201 to be coated are placed on the platform 5 and are positioned under the plasma gun 2.Thing 200 to be coated for example is a substrate in the present embodiment.The material of thing 200 to be coated for example is PMMA, Silicon Wafer or glass.
Then, shown in step 22, provide plasma to come from the reaction zone 6.Plasma source can be inert gas, air, nitrogen, oxygen, fluorocarbon gases and hydrocarbon gas at least one of them.Wherein, inert gas for example is helium, neon, argon gas, krypton gas, and air for example is a clean dry air, and fluorocarbon gases for example is a carbon tetrafluoride, and hydrocarbon gas for example is an acetylene.
Then, shown in step 23, provide the plated film monomer in reaction zone 6.Step 23 be preferably with one the carrying gas-entrained go in the reaction zone 6, the carrying gas comprise inert gas, air, nitrogen, oxygen, fluorocarbon gases and hydrocarbon gas etc. at least one of them.The plated film monomer comprise Si oxide, fluorine Si oxide, metal oxide, saturated hydrocarbon and unsaturated hydrocarbon etc. at least one of them.Wherein, Si oxide for example is HMDS (hexamethyldisilazane, HMDSN), HMDO (hexamethyldisiloxane, HMDSO), tetraethyl silane (Tetraethoxysilane, TEOS), the fluorine Si oxide for example is silicon fluoride (fluoro-alkyl-silane FAS) class, and metal oxide for example is isopropyl titanate (TIP), zinc nitrate (Zn (NO
3)
2), saturated hydrocarbon and unsaturated hydrocarbon for example are phenyl-hexafluoride (C
6F
6), carbon tetrafluoride (CF
4), acetylene (C
2H
2) or the like.
Then, shown in step 24, under normal pressure, dissociate, make plasma 4 and plated film monomer reaction as the gas formation plasma 4 of plasma source.High-octane electronics or fragment ions down form free radical to the plated film monomer or more tiny structure is beneficial to deposition generation homogeneous film via having in the plasma.
Then, shown in step 25, in the surface 201 of the substrate of thing 200 to be coated and regroup to form film, film has a plurality of micro-protuberance structures via the plated film monomer deposition of plasma division.Wherein, if use Si oxide or fluorine Si oxide, then form silicon oxide film as the plated film monomer; If use metal oxide, then can polymerization form metal-oxide film as the plated film monomer; If use saturated hydrocarbon and unsaturated hydrocarbon, then can form carbon film or class and bore carbon (diamond-like carbon, DLC) film as the plated film monomer.
Please refer to Fig. 5 B, it illustrates the synoptic diagram with the formed anti-reflection plate of atmospheric pressure plasma plated film.Anti-reflection plate 200a comprises that the light entrance face 211 of anti-reflection film 210 has the micro-protuberance structure 215 of a plurality of periodicity nano-scale through formed individual layer anti-reflection film 210 of plated film and thing to be coated 200.Please refer to Fig. 5 C, it illustrates the partial enlarged drawing of the anti-reflection plate of Fig. 5 B.Preferably, the scope of 215 other mean breadths of micro-protuberance structure D2 is positioned between 10 nanometers (nm)～500nm, and micro-protuberance structure 215 with respect to the roughness of the light entrance face 211 of anti-reflection film 210 less than 100nm.Same, in the present embodiment, (atomic force microscopy AFM) measures with atomic force microscope in roughness system.
In addition, in the above-mentioned steps 21～25, preferably more comprise the temperature of controlling thing 200 to be coated.The temperature range of thing 200 to be coated preferably between 10 ℃～100 ℃, can make the film 210 of formation have preferable character.
Same, the above-mentioned steps 21～25 of present embodiment is preferably in an atmospheric pressure plasma system carries out, and does not limit the execution sequence of each step.Wherein, the atmospheric plasma system can produce one of them kind of different plasma kenels such as atmospheric pressure plasma glow discharge, atmospheric pressure jet plasma, atmospheric pressure plasma torch, the dielectric medium discharge of atmospheric pressure surface.
Please refer to Fig. 6, its illustrate glass substrate with different plated film monomers carry out before the plasma coating with plated film after light transmittance comparison diagram under different optical wavelength.As shown in Figure 6, curve 61 is the light transmittance curve of the glass substrate before the plasma coating, curve 62,63,64 is respectively and uses HMDSN, uses hydrogen and nitrogen mixture body, and uses argon gas to carry out the light transmittance curve of the glass substrate of plasma coating as plasma source.As seen from Figure 6, though with any gas as plasma source, through the light transmittance of the glass substrate behind the plasma coating significant lifting is arranged all.
The manufacture method of disclosed anti-reflection plate of the above embodiment of the present invention and anti-reflection structure thereof, be to utilize atmospheric pressure plasma to form the structure on emulation moth eye surface, can eliminate the problem that the display reflective phenomenon causes the picture reading difficulty, or promote the incident light ratio to improve the efficiency of light energy utilization.Because atmospheric pressure plasma technology can be saved and be vacuumized the required time, and the material requested cost is low, can not produce the material that causes environmental pollution, can significantly reduce the manufacturing cost of product.In addition, no matter be mode with surface treatment or plated film, the neither shape of object that is subjected to itself influences, and therefore can form anti-reflection structure on the substrate of complex geometry external form.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion with the scope that claims were defined.
Claims (21)
1, a kind of manufacture method of anti-reflection structure is characterized in that, this method comprises:
A, provide a pending thing in a reaction zone;
B, provide a plasma to come from this reaction zone;
C, this plasma source of dissociating under normal pressure form plasma; And
D, with the surface of this pending thing of Cement Composite Treated by Plasma, form a plurality of micro-protuberance structures with surface in this pending thing.
2, method according to claim 1 is characterized in that, those micro-protuberance structures other mean breadth scope is between 10 nanometer to 500 nanometers.
3, method according to claim 1 is characterized in that, those micro-protuberance structures for the roughness on the surface of this pending thing less than 100nm.
4, method according to claim 1 is characterized in that, this plasma source one of is at least in inert gas, air, nitrogen, oxygen, fluorocarbon gases and the hydrocarbon gas.
5, method according to claim 1 is characterized in that, the material of this pending thing is a polymetylmethacrylate.
6, method according to claim 1 is characterized in that, the material of this pending thing is glass or Silicon Wafer.
7, method according to claim 6 is characterized in that, this plasma source is the mixed gas that argon gas and carbon tetrafluoride are formed.
8, method according to claim 1, it is characterized in that, this step a is to carry out in an atmospheric pressure plasma system to steps d, this atmospheric plasma system can produce atmospheric pressure plasma glow discharge, atmospheric pressure jet plasma, atmospheric pressure plasma torch and the dielectric medium discharge of atmospheric pressure surface at least one of them.
9, a kind of manufacture method of anti-reflection structure is characterized in that, this method comprises:
A, provide a thing to be coated in a reaction zone;
B, provide a plasma to come from this reaction zone;
C, provide a plated film monomer in this reaction zone;
D, this plasma source of dissociating under normal pressure form plasma, make plasma and this plated film monomer reaction; And
E, deposit this plated film monomer in this thing to be coated surface to form a film, this film has a plurality of micro-protuberance structures.
10, method according to claim 9 is characterized in that, this method further comprises:
Control the temperature of this thing to be coated, wherein the temperature range of this thing to be coated is between 10 ℃ to 100 ℃.
11, method according to claim 9 is characterized in that, the material of this thing to be coated one of is at least in PMMA, Silicon Wafer and the glass.
12, method according to claim 9 is characterized in that, those micro-protuberance structures other mean breadth scope is between 10nm to 500nm.
13, method according to claim 9 is characterized in that, those micro-protuberance structures with respect to the roughness on the surface of this thing to be coated less than 100nm.
14, method according to claim 9 is characterized in that, this plasma source one of is at least in inert gas, air, nitrogen, oxygen, fluorocarbon gases and the hydrocarbon gas.
15, method according to claim 9, it is characterized in that, among this step C, this plated film monomer is to go in this reaction zone with a carrying gas-entrained, and this carrying gas one of is at least in inert gas, air, nitrogen, oxygen, fluorocarbon gases and the hydrocarbon gas.
16, method according to claim 9 is characterized in that, this plated film monomer one of is at least in Si oxide, fluorine Si oxide, metal oxide, saturated hydrocarbon and the unsaturated hydrocarbon.
17, method according to claim 9, it is characterized in that, this steps A to step e is to carry out in an atmospheric plasma system, this atmospheric plasma system can produce atmospheric pressure plasma glow discharge, atmospheric pressure jet plasma, atmospheric pressure plasma torch and the dielectric medium discharge of atmospheric pressure surface at least one of them.
18, a kind of anti-reflection plate has a light entrance face, and this anti-reflection plate comprises a plurality of micro-protuberance structures that are arranged on this light entrance face, and those micro-protuberance structures other mean breadth scope is between 10nm to 500nm.
19, reflecting plate according to claim 18 is characterized in that, those micro-protuberance structures with respect to the roughness of this light entrance face less than 100nm.
20, reflecting plate according to claim 18 is characterized in that, the material of this anti-reflection plate one of is at least among glass, Silicon Wafer and the PMMA.
21, reflecting plate according to claim 18 is characterized in that, this anti-reflection plate further comprises:
One substrate; And
One single thin film is arranged on this substrate, and this single thin film has those micro-protuberance structures.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100031803A CN101487904A (en) | 2008-01-15 | 2008-01-15 | Anti-reflection plate and production method for anti-reflection structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100031803A CN101487904A (en) | 2008-01-15 | 2008-01-15 | Anti-reflection plate and production method for anti-reflection structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104379675A (en) * | 2012-02-01 | 2015-02-25 | 3M创新有限公司 | Nanostructured materials and methods of making the same |
| CN104952791A (en) * | 2015-06-26 | 2015-09-30 | 深圳市华星光电技术有限公司 | Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device |
| CN110665768A (en) * | 2019-07-26 | 2020-01-10 | 江苏菲沃泰纳米科技有限公司 | Waterproof nano film and preparation method, application and product thereof |
-
2008
- 2008-01-15 CN CNA2008100031803A patent/CN101487904A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104379675A (en) * | 2012-02-01 | 2015-02-25 | 3M创新有限公司 | Nanostructured materials and methods of making the same |
| CN104952791A (en) * | 2015-06-26 | 2015-09-30 | 深圳市华星光电技术有限公司 | Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device |
| WO2016206150A1 (en) * | 2015-06-26 | 2016-12-29 | 深圳市华星光电技术有限公司 | Structure and manufacturing method of amoled display device |
| CN110665768A (en) * | 2019-07-26 | 2020-01-10 | 江苏菲沃泰纳米科技有限公司 | Waterproof nano film and preparation method, application and product thereof |
| CN110665768B (en) * | 2019-07-26 | 2022-04-26 | 江苏菲沃泰纳米科技股份有限公司 | Waterproof nano film and preparation method, application and product thereof |
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Open date: 20090722 |