JP4170454B2 - Article having transparent conductive oxide thin film and method for producing the same - Google Patents

Article having transparent conductive oxide thin film and method for producing the same Download PDF

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JP4170454B2
JP4170454B2 JP20894898A JP20894898A JP4170454B2 JP 4170454 B2 JP4170454 B2 JP 4170454B2 JP 20894898 A JP20894898 A JP 20894898A JP 20894898 A JP20894898 A JP 20894898A JP 4170454 B2 JP4170454 B2 JP 4170454B2
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range
ratio
substrate
article
film
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JP2000044236A (en
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裕道 太田
博司 川副
清 森田
秀雄 細野
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Hoya株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66969Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an article having a transparent conductor film containing an amorphous oxide having high conductivity and visible, particularly blue light transmittance, and easy to produce, and a method for producing the same. The present invention further relates to an electrode comprising the article of the present invention.
[0002]
[Prior art]
Light transmissive liquid crystal panel displays are widely used in various electrical products as thin and light display devices. In particular, it is actively introduced to office automation equipment such as personal computers and word processors. Currently, the demand for laptop computers with a diagonal of about 10 inches and displays for space-saving desktop computers is increasing, and the area is further increased. Improvements have been made in the direction of increasing the number of pixels and increasing the definition.
[0003]
A transparent electrode is indispensable for a light-transmissive liquid crystal, and ITO is mainly used as a transparent electrode material. ITO is transparent over almost the entire ultraviolet region, and its electrical resistivity can be reduced to about 1 × 10 −4 Ωcm. Therefore, ITO is suitable as a transparent electrode material for liquid crystal displays and the like. In recent years, in response to the demand for higher definition, an amorphous phase of ITO, so-called amorphous ITO, has been used. This is because amorphous ITO has better patterning properties than crystalline ITO, so that a thin electrode pattern can be cut cleanly. This is because the electrical resistivity increases as compared with crystalline ITO, but is a sufficient resistance value for a TFT type pixel electrode that occupies the mainstream of liquid crystal displays. In addition, plastic substrates tend to be used to reduce the weight of the display, and amorphous ITO that can be formed at room temperature is considered preferable. This is because a film of crystalline ITO requires a temperature of 200 ° C. or higher.
[0004]
[Problems to be solved by the invention]
Amorphous ITO consists of In 2 O 3 in 90% or more of its components. For this reason, with the recent spread of liquid crystal displays, the price of In 2 O 3 has soared to about twice, which is a factor in increasing raw material costs . In 2 O 3 is a rare metal and is expected to be depleted if mining continues for another 30 years. For these reasons, there is a need for materials with low In 2 O 3 content, low raw material costs, and low resource environmental impact.
[0005]
Therefore, the object of the present invention is to reduce the content of In 2 O 3 which has a high environmental burden on the environment, and can be easily manufactured at a temperature near room temperature, and has a low resistance and an optical absorption edge in the ultraviolet region. Another object of the present invention is to provide a novel transparent conductor material excellent in blue transmittance and a method for producing the same, and an electrode using such a transparent conductor material.
[0006]
The inventors of the present invention can easily produce a zinc-indium oxide containing a predetermined amount of aluminum or gallium at a temperature near room temperature, and has a low resistance and an optical absorption edge in the ultraviolet region. Thus, the present invention was completed by finding that it has excellent blue transmittance.
[0007]
JP-A-7-235219 discloses a conductive transparent substrate provided with a transparent conductive film made of a zinc-indium oxide. This transparent conductive film is made of an amorphous oxide containing indium (In) and zinc (Zn) as main cation elements, and has an atomic ratio In / (In + Zn) in the range of 0.8 to 0.9. . Further, this oxide contains aluminum, gallium, antimony or germanium as the third element, and the content thereof is atomic ratio (all third elements) / (In + Zn + total) in order to suppress the decrease in conductivity. The third element) is 0.2 or less.
[0008]
In this publication, there is no description about the absorption edge of the transparent conductive film made of the oxide, and only the light transmittance is clarified as to the optical characteristics. That is, it is not clear what light transmittance spectrum the transparent conductive film has, and it is unclear whether it has low resistance, the optical absorption edge is in the ultraviolet region, and is excellent in blue transmittance.
[0009]
[Means for Solving the Problems]
A first aspect of the article of the present invention, at least a portion of at least one surface of a substrate, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( in the formula, M at least one element selected from aluminum and gallium in the range ratio x / y is from 0.2 to 2, containing an amorphous oxide ratio z / y is represented by some) in the range of 0.4 to 1.4 It has a film. A second aspect of the article of the present invention, at least a portion of at least one surface of a substrate, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( in the formula, M At least one element of aluminum and gallium, in which the ratio x / y is in the range of 0.2 to 2 and the ratio z / y is in the range of 0.4 to 1.4) and is injected with cations It has a film containing a certain amorphous oxide.
[0010]
Furthermore, this invention relates to the electrode which consists of an article | item of the said invention.
[0011]
The first production method of the present invention is a method of manufacturing an article of the first aspect of the present invention, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( in the formula , M is at least one element of aluminum and gallium, the ratio x / y is in the range of 0.2 to 2 , and the ratio z / y is in the range of 0.4 to 1.4) , a substrate temperature of range of the range of 300 ° C. from room temperature, and the pressure 1 × 10 -2 [Pa] ~10 [Pa], Ri by the sputtering or laser ablation method, to form an acid fluoride film Features.
[0012]
The second production method of the present invention is a method of manufacturing an article of the second aspect of the present invention, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( in the formula , M is at least one element of aluminum and gallium, the ratio x / y is in the range of 0.2 to 2 , and the ratio z / y is in the range of 0.4 to 1.4) the substrate temperature in the range of 300 ° C. from room temperature, and a range of pressure 1 × 10 -2 [Pa] ~10 [Pa], Ri by the sputtering or laser ablation method, the oxides film formed, then A cation is implanted into the oxide film.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
In the article <br/> formula of the first aspect Zn x M y In z O of the present invention (x + 3y / 2 + 3z / 2), M may be the sole one of aluminum and gallium , M may coexist with aluminum and gallium. When aluminum and gallium coexist, the ratio of aluminum to gallium is not particularly limited. However, as the aluminum ratio increases, the crystallization temperature tends to increase. As the gallium ratio increases, the crystallization temperature tends to decrease.
[0014]
The ratio (x / y) is in the range of 0.2 or more and 2 or less. If x / y is less than 0.2, the raw material cost increases. When x / y exceeds 12, the Zn component becomes too large and becomes chemically unstable in the atmosphere. A preferred ratio (x / y) is in the range of 1 to 10, more preferably in the range of 4 to 10. The ratio (z / y) is in the range of 0.4 or more and 1.4 or less. When z / y is less than 0.4, In 2 O 3 is insufficient and the electrical conductivity is lowered. When z / y exceeds 1.4, the Ga 2 O 3 component is insufficient and the transparency of the blue region is lowered. A preferred ratio (z / y) is in the range of 0.6 to 1.4, and more preferably in the range of 0.8 to 1.2.
[0015]
Furthermore, in the article of the present invention, the ratio x / (x + y + z) is preferably 0.5 or more from the viewpoint of reducing raw material costs and reducing environmental burden. The ratio x / (x + y + z) is preferably in the range of 0.6 to 0.9.
Further, in the film of the article of the present invention, it is preferable that the oxide is substantially amorphous in terms of transmittance and conductivity. However, the oxide is crystalline to the extent that the transmittance and conductivity are not impaired. Quality oxides can also be included.
[0016]
The conductivity of the oxide of the present invention is good when the amount of carrier electrons in the conduction band is within a predetermined range. The amount of such carrier electrons is in the range of 1 × 10 18 / cm 3 to 1 × 10 22 / cm 3 . A preferable amount of carrier electrons is in the range of 1 × 10 19 / cm 3 to 5 × 10 21 / cm 3 .
The amount of carrier electrons can be measured by, for example, a van der Pauw electric conductivity measuring device.
[0017]
The article of the second aspect of the article <br/> present invention of the second aspect of the present invention, the general formula Zn x M y In z wherein the O (x + 3y / 2 + 3z / 2), Zn, About M, a ratio (x / y), and a ratio (z / y), it is the same as that of the article | item of the said 1st aspect of this invention. The ratio x / (x + y + z) and the amorphous state are the same as the conductive oxide of the article of the first aspect of the present invention.
[0018]
Furthermore, the article of the second aspect of the present invention is obtained by injecting a cation into the oxide represented by the above general formula.
In the article according to the second aspect of the present invention, in addition to introducing oxygen vacancies, carrier electrons can be injected into the conduction band by injecting cations, and conductivity can be expressed.
[0019]
Cations article of the second aspect is injected into the conductive oxide having the present invention, of the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) oxide represented by There is no particular limitation as long as it can be dissolved without destroying the crystal structure. However, ions having a small ion radius tend to be dissolved in the crystal lattice, and the larger the ion radius, the easier it is to destroy the crystal structure.
Examples of such cations include H, Li, Be, B, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu. Zn, Ga, Ge, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi.
[0020]
Electrode of the Present Invention The electrode of the present invention includes the article of the first or second aspect of the present invention. The film thickness of the conductive layer made of the oxide film in the electrode of the present invention can be appropriately determined in consideration of the optical characteristics, conductivity, application, and the like required for the electrode. For example, in the case of a liquid crystal panel electrode, the lower limit is about 30 nm and the upper limit is about 1 μm. However, depending on the type of element contained in the oxide, there are some that have partial absorption in the visible region. In that case, a relatively thin film is preferable. For those that have little or no absorption in the visible region, higher conductivity can be obtained by increasing the film thickness.
[0021]
Examples of the transparent substrate corresponding to the base material in the article of the present invention include a transparent substrate such as glass and resin. In other words, any transparent material can be used as the substrate regardless of glassy or high polymer. Also, the substrate form corresponds to all forms such as a flat substrate, a sheet, and a film. Glass substrates are often used for liquid crystal displays and the like. Glass substrates include soda-based glass and low alkali glass, and soda-based glass is generally widely used. However, low alkali glass is excellent for color displays and high-quality displays. It is preferable to use a glass having high transparency in the visible region and excellent flatness.
[0022]
Examples of the resin substrate include a polyester substrate and a PMMA substrate. Resin substrates are being studied for many uses that take advantage of their light weight, thinness, flexibility, and high degree of freedom of shape as compared to glass substrates. For example, an electrophotographic film, a liquid crystal display, an optical memory, a transparent tabular switch, an antistatic film, a heat ray reflective film, and a surface heating film. In addition to high transparency in the visible region and excellent flatness, the liquid crystal display is preferably used in consideration of processability, impact resistance, durability, suitability for assembly processes, and the like.
[0023]
Moreover, the electrode of this invention can also be provided on the base layer provided on the said transparent substrate. Examples of the underlayer include a color filter, a TFT layer, an EL light emitting layer, a metal layer, a semiconductor layer, and an insulator layer. Two or more underlayers can be provided side by side.
[0024]
The electrode of the present invention can be used for various applications. For example, it can be suitably used as an electrode for liquid crystal displays, EL displays, solar cells and the like.
There are various types of liquid crystal displays such as TFT type, STN type and MIM type. In either case, the principle of displaying by controlling the alignment direction of the liquid crystal by applying an electric field to the liquid crystal sandwiched between transparent electrodes. Used. The electrode of the present invention can be used as the transparent electrode.
For example, the structure of a TFT-type color liquid crystal display is composed of six parts: a backlight, a first polarizing plate, a TFT substrate, a liquid crystal, a color filter substrate, and a second polarizing plate. In order to control the alignment direction of the liquid crystal, it is necessary to form transparent electrodes on the TFT substrate and the color filter substrate, but the transparent electrode of the present invention is formed on the TFT substrate and the color filter substrate by the above method. can do. The transparent electrode of the present invention is optimal as a transparent electrode provided on a TFT substrate or a color filter substrate because of its high transparency and high conductivity.
[0025]
The transparent electrode of the present invention can also be used as an EL display electrode. The EL display includes a dispersion type, a lumocene structure type, and a double insulation structure type. In any case, the EL display has a basic structure in which an EL light emitting layer is sandwiched between a transparent electrode and a back electrode. It is most suitable as the transparent electrode.
[0026]
The electrode of the present invention is excellent as a solar cell electrode because of its high transparency and conductivity. Solar cells are classified into pn junction type, Schottky barrier type, heterojunction type, heteroface junction type, pin type, etc. In any case, a semiconductor or an insulator is sandwiched between a transparent electrode and a back electrode. Has a basic structure. Solar cells are devices that convert light energy into electricity using the photovoltaic effect at the semiconductor interface, so it is necessary to guide light to the semiconductor interface over as wide a spectral range as possible. Must be expensive. In addition, since the transparent electrode of the solar cell has the function of collecting the photogenerated carriers generated at the semiconductor interface and leading them to the terminal, the conductivity of the transparent electrode must be high in order to collect the photogenerated carriers as effectively as possible. Don't be. The transparent electrode of the present invention is excellent as an electrode for a solar cell because it can guide light to a semiconductor interface over a wide spectral range of the entire visible region including light having a wavelength shorter than 450 nm and has high conductivity.
[0027]
Manufacturing method of the present invention The first and second manufacturing methods of the present invention are the manufacturing methods of the articles of the first and second aspects of the present invention, respectively. In the first manufacturing method of the present invention, in the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( wherein, M is at least one element selected from aluminum and gallium, the ratio x / Y is in the range of 0.2 to 2 and the ratio z / y is in the range of 0.4 to 1.4). In the second manufacturing method of the present invention, as in the first manufacturing method, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( wherein, M is one of aluminum and gallium An oxide represented by at least one element and having a ratio x / y in the range of 0.2 to 2 and a ratio z / y in the range of 0.4 to 1.4 is used as a target.
[0028]
In the manufacturing method of the present invention, the composition of the thin film to be formed hardly changes depending on the density of the target. However, considering the damage of the target due to laser pulse irradiation, the oxide used as the target preferably has a relative density of 40% or more, and more preferably 70% or more. As the target, for example, a sintered body can be used.
Further, since the composition of the thin film to be formed is little shifted from the target and is at most 5%, the target composition can be the same as the desired thin film composition. However, the target composition can be changed as necessary.
[0029]
The target, for example, in the range of x / y> 1, containing a mixed crystal sintered body of an oxide of Zn, or an oxide of Zn integer number, it is possible to use a sintered body of homologous.
[0030]
In the production method of the present invention, the sputtering method or laser ablation is performed in an oxygen atmosphere or an oxygen radical atmosphere in which the substrate temperature is in the range of room temperature to 300 ° C. and in the pressure range of 1 × 10 −2 [Pa] to 10 [Pa]. An oxide film is formed by the method.
Even in sputtering and laser ablation methods, the substrate temperature is in the range of room temperature to 300 ° C and the pressure (oxygen partial pressure) is in the range of 1 × 10 -2 [Pa] to 10 [Pa]. A quality oxide film can be formed. The substrate temperature is preferably in the range of 0 to 150 ° C., and the pressure is preferably in the range of 0.01 [Pa] to 1 [Pa].
[0031]
The sputtering method can be performed by a conventional method.
In the laser ablation method, the oxygen partial pressure in the thin film forming apparatus can be controlled by introducing oxygen molecules into the system from an appropriate leak valve or the like. Performing with a radical gun is appropriate from the viewpoint of easily controlling the amount of oxygen contained in the film. The radical gun is a device that generates radical species of gas such as oxygen by rf plasma and introduces it into the vacuum system.
[0032]
The laser used in the laser ablation method of the production method of the present invention can be any wavelength from the ultraviolet region to the infrared region, that is, 0.19 to 11 μm, preferably 0.19 to 0.3 μm, and can be either continuous oscillation or pulse oscillation. Can be adopted. Laser intensity at the time of laser irradiation, 0.0001~1000J / cm 2 · pulse, and desirably 0.1~100J / cm 2 · pulse.
[0033]
In the manufacturing method of the second aspect, cations are implanted into the oxide film formed by the above method. By injecting cations, carrier electrons are injected into the conduction band, and conductivity can be developed. The ions to be positively implanted are as described above.
[0034]
In the production method of the present invention, for example, when a sintered body of In: Ga: Zn = 1: 1: 1 is used as a target, a thin film of 6.2 × 10 −3 [Ωcm] can be easily obtained. In this case, the main cause of high conductivity is that the mobility is as high as 10 or more despite the amorphous material.
Further, when a sintered body of homologous IGZO InGaO 3 (ZnO) m (m: integer of 2 or more) with an increased Zn component is used as a target, it has a resistivity of 4.3 × 10 −3 [Ωcm]. A thin film can be obtained easily. The reason for this is that the carrier concentration shows an exponential increasing tendency while the mobility hardly changes.
[0035]
If further reduction in resistance is desired, the conductivity can be improved by increasing the carrier density by using a gas reduction method or ion implantation method at a low temperature (300 ° C. or lower is desirable) after film formation. Furthermore, the carrier density may be improved by utilizing a substitution doping effect that changes the composition of the target.
[0036]
【The invention's effect】
Since the article of the present invention has a low In 2 O 3 content in the material, the material cost is low, the environmental load is small, the visible light transmittance is 85% or more, and the absorption short wavelength is 385 nm. It is possible to reduce the resistance by increasing the film thickness for both monochrome and color screens.
In addition, since the crystallization temperature of the material constituting the film is as high as 400 ° C. or higher, there is an advantage that stable amorphousness is maintained and there is no change in resistivity in a normal use temperature range. Since it is a stable oxide, it has excellent environmental resistance and can be used as a transparent electrode for solar cells used outdoors.
[0037]
In addition, since film formation at a temperature of about room temperature exhibits conductivity without a reduction / annealing operation, the production efficiency is high, the apparatus is simple, and the production cost can be reduced.
[0038]
In particular, the article of the present invention has excellent electrical conductivity and visible light transmittance including a blue region, and has potential as a useful transparent electrode, so that it can be used as an electrode for a display or a solar cell. Can do. In addition, since the film formation temperature can be set near room temperature, the production efficiency is high. Furthermore, the material has a high crystallization temperature and is excellent in environmental resistance.
[0039]
【Example】
The conditions of this example are as follows.
[0040]
1. Create target
Each powder of In 2 O 3 , Ga 2 O 3 , and ZnO was weighed so that the ratio of the contained metal was 1 respectively. Weighed powder is wet mixed with a planetary ball mill. After calcining at 1000 ° C for 5 hours, it was crushed again with a planetary ball mill. This powder was formed into a disk shape having a diameter of 20 mm by uniaxial pressing, and then CIP was applied. The sintered body was obtained by firing at 1550 ° C. for 2 hours in the air. It was confirmed by XRD that an oxide represented by InGaZnO 4 was formed.
[0041]
In the case of homologous InGaO 3 (ZnO) m , each powder of In 2 O 3 , Ga 2 O 3 , and ZnO is weighed so that the ratio of contained metal is 1: 1: m (m is an integer of 2 or more). did. Weighed powder is wet mixed with a planetary ball mill. After calcining at 1000 ° C for 5 hours, it was crushed again with a planetary ball mill. This powder was formed into a disk shape having a diameter of 20 mm by uniaxial pressing, and then CIP was applied. The sintered body was obtained by firing at 1550 ° C. for 2 hours in the air. It was confirmed by XRD that an oxide represented by InGaO 3 (ZnO) m corresponding to each m value was generated.
[0042]
2. Deposition The film formation method using the laser ablation method is shown as an example below.
Example 1
Among the sintered bodies produced above, the surface of the sintered body with In: Ga: Zn = 1: 1: 1 was polished and fixed to a holder made of Inconel with metal In. This is fixed to a laser ablation device manufactured by Nippon Vacuum Co., Ltd., and a lambda physics KrF excimer laser beam is irradiated at an energy density of 4 J / cm 2 and a pulse interval of 5 Hz on the surface being rotated. It was. The atmosphere in the chamber was 15-25 CCM of O 2 gas, and the total pressure was 0.8-1.0 [Pa]. A quartz glass substrate of 10 mm square and 0.5 mm thickness was placed 30 mm directly above the target and exposed to the plume for 30 minutes while rotating so that the film thickness was uniform, thereby obtaining a thin film of about 300 nm. The composition ratio was obtained by fluorescent X-ray method. It was confirmed by XRD that the film was uniform amorphous (FIG. 1). The absorption edge was determined by calculating the optical constant from the transmission and reflection spectra of the sample. Electrical characteristics were obtained by Hall effect measurement by van der Pau method.
[0043]
[Table 1]
[0044]
Example 2
An IGZO amorphous thin film was obtained by using an acrylic substrate having a thickness of 10 mm and a thickness of 1.0 mm as the film formation substrate under the same conditions as in Example 1.
[0045]
[Table 2]
[0046]
Example 3
As in Example 1, O 2 gas 5-20 [CCM] was flowed in the chamber atmosphere, and oxygen radicals were generated by applying an RF power of 50 W using a radical gun, so that the total pressure was 0.2-0.4 [Pa].
[0047]
[Table 3]
[0048]
Example 4
Of the sintered bodies produced above, the surface of the sintered body of In: Ga: Zn = 1: 1: 4 was polished and fixed to a holder made of Inconel with metal In. This is fixed to a laser ablation device manufactured by Nippon Vacuum Co., Ltd., and a lambda physics KrF excimer laser beam is irradiated at an energy density of 4 J / cm 2 and a pulse interval of 5 Hz on the surface being rotated. It was. The atmosphere in the chamber was 15-25 CCM of O 2 gas, and the total pressure was 0.8-1.0 [Pa]. A quartz glass substrate of 10 mm square and 0.5 mm thickness was placed 30 mm above the target, and exposed to the plume for 30 minutes while rotating so that the film thickness was uniform, thereby obtaining a thin film of about 300 nm. The composition ratio was obtained by fluorescent X-ray method. XRD confirmed that the film was uniform and amorphous. The absorption edge was determined by calculating the optical constant from the transmission and reflection spectra of the sample. Electrical characteristics were obtained by Hall effect measurement by van der Pau method.
[0049]
[Table 4]

[Brief description of the drawings]
FIG. 1 shows an XRD result for confirming that an oxide represented by InGaZnO 4 is formed.

Claims (13)

  1. At least a portion of at least one surface of a substrate, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( wherein, M is at least one element of aluminum and gallium ranged ratio x / y is from 0.2 to 2, article ratio z / y is characterized by having a film containing an amorphous oxide represented by any) in the range of 0.4 to 1.4.
  2. At least a portion of at least one surface of a substrate, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( wherein, M is at least one element of aluminum and gallium And the ratio x / y is in the range of 0.2 to 2 , and the ratio z / y is in the range of 0.4 to 1.4), and a film containing an amorphous oxide in which cations are implanted Article characterized by having.
  3. Such that the amount of carrier electrons is in the range of 1 × 10 18 ~1 × 10 22 / cm 3, article of claim 2, wherein the selected amount of injected oxygen deficiency d and cations.
  4.  The article according to any one of claims 1 to 3, wherein the ratio x / (x + y + z) is 0.5 or more.
  5.  The article according to any one of claims 1 to 4, wherein the substrate is a polymer substrate, a polymer flexible substrate, or a glass substrate.
  6. Substrate made of a film-like or sheet-like transparent polymer article according to claim 5.
  7.  The electrode which consists of an article | item of any one of Claims 1-6.
  8.  The electrode according to claim 7, further comprising an underlayer between the substrate and the film.
  9.  9. The electrode according to claim 8, wherein the underlayer is one or more layers selected from the group consisting of a filter layer, a TFT layer, an EL layer semiconductor layer, and an insulating layer.
  10.  The electrode according to any one of claims 8 to 9, which is used for a liquid crystal display, an EL display or a solar cell.
  11. A method of making an article according to claim 1, the general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( wherein, M represents at least one element of aluminum and gallium There is a range ratio x / y is from 0.2 to 2, the oxide ratio z / y is represented by some) in the range of 0.4 to 1.4 as a target, the range of the substrate temperature from room temperature to 300 ° C., and wherein a range of 1 × 10 -2 pressure [Pa] ~10 [Pa], Ri by the sputtering or laser ablation method, to form an acid fluoride film.
  12. A method of making an article according to claim 2, general formula Zn x M y In z O ( x + 3y / 2 + 3z / 2) ( wherein, M represents at least one element of aluminum and gallium There is a range ratio x / y is from 0.2 to 2, the oxide ratio z / y is represented by some) in the range of 0.4 to 1.4 as a target, the range of the substrate temperature from room temperature to 300 ° C., and wherein a range of 1 × 10 -2 pressure [Pa] ~10 [Pa], Ri by the sputtering or laser ablation method, oxides film is formed and then the implanting positive ions into the oxide film And how to.
  13. The manufacturing method according to claim 11 or 12 , wherein heat treatment and / or reduction treatment is performed at a temperature in the range of 10 to 300 ° C after film formation.
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Families Citing this family (1767)

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Publication number Priority date Publication date Assignee Title
US6876003B1 (en) 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
WO2003040441A1 (en) * 2001-11-05 2003-05-15 Japan Science And Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (en) * 2002-09-11 2008-10-15 Hoya株式会社 Transparent thin film field effect transistor using homologous thin film as active layer
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US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
KR20070116888A (en) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 Amorphous oxide and thin film transistor
TWI417905B (en) * 2004-09-13 2013-12-01 Sumitomo Metal Mining Co A transparent conductive film and a method for manufacturing the same, and a transparent conductive substrate and a light-emitting device
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EP1815530A1 (en) 2004-11-10 2007-08-08 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
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US7601984B2 (en) * 2004-11-10 2009-10-13 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
JP5053537B2 (en) * 2004-11-10 2012-10-17 キヤノン株式会社 Semiconductor device using amorphous oxide
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
TWI390735B (en) 2005-01-28 2013-03-21 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
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US7928938B2 (en) 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
WO2006137199A1 (en) 2005-06-23 2006-12-28 Nippon Mining & Metals Co., Ltd. Sputtering target and thin film for optical information recording medium
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US9318053B2 (en) 2005-07-04 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
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JP2007041260A (en) * 2005-08-03 2007-02-15 Fujifilm Holdings Corp Liquid crystal display element
TWI424408B (en) 2005-08-12 2014-01-21 Semiconductor Energy Lab Semiconductor device, display device and electronic device equipped with the semiconductor device
JP5058469B2 (en) * 2005-09-06 2012-10-24 キヤノン株式会社 Sputtering target and method for forming a thin film using the target
EP1764770A3 (en) 2005-09-16 2012-03-14 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of display device
US7712009B2 (en) 2005-09-21 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
EP1998375A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method
EP1935027B1 (en) 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7821613B2 (en) 2005-12-28 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5177954B2 (en) 2006-01-30 2013-04-10 キヤノン株式会社 Field effect transistor
CN102360442B (en) 2006-03-10 2015-01-07 株式会社半导体能源研究所 Semiconductor device and operating method thereof
JP5016831B2 (en) 2006-03-17 2012-09-05 キヤノン株式会社 Light emitting element using oxide semiconductor thin film transistor and image display device using the same
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
JP4614148B2 (en) 2006-05-25 2011-01-19 富士電機ホールディングス株式会社 Manufacturing method of oxide semiconductor and thin film transistor
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5116277B2 (en) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 Semiconductor device, display device, liquid crystal display device, display module, and electronic apparatus
JP5105842B2 (en) 2006-12-05 2012-12-26 キヤノン株式会社 Display device using oxide semiconductor and manufacturing method thereof
CN102212787B (en) 2006-12-13 2016-01-20 出光兴产株式会社 Sputtering target and oxide semiconductor film
WO2008123420A1 (en) * 2007-03-30 2008-10-16 Mitsui Mining & Smelting Co., Ltd. Process for producing indium oxide-type transparent electroconductive film
WO2008126492A1 (en) 2007-04-05 2008-10-23 Idemitsu Kosan Co., Ltd. Field-effect transistor, and process for producing field-effect transistor
JP5542297B2 (en) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 Liquid crystal display device, display module, and electronic device
JP4989309B2 (en) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 Liquid crystal display
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
KR100889688B1 (en) 2007-07-16 2009-03-19 삼성모바일디스플레이주식회사 Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP2009123957A (en) 2007-11-15 2009-06-04 Sumitomo Chemical Co Ltd Oxide semiconductor material and manufacturing method therefor, electronic device, and field-effect transistor
CN103258857B (en) 2007-12-13 2016-05-11 出光兴产株式会社 Field-effect transistor and the manufacture method thereof of oxide semiconductor are used
US8461583B2 (en) 2007-12-25 2013-06-11 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR101346472B1 (en) 2008-06-06 2014-01-02 이데미쓰 고산 가부시키가이샤 Sputtering target for oxide thin film and process for producing the sputtering target
JP5580972B2 (en) 2008-06-06 2014-08-27 デクセリアルズ株式会社 Sputtering composite target
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR102042037B1 (en) 2008-07-10 2019-11-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and electronic device using the same
TWI500159B (en) 2008-07-31 2015-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI476921B (en) 2008-07-31 2015-03-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9666719B2 (en) 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010056541A (en) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
TWI495108B (en) 2008-07-31 2015-08-01 Semiconductor Energy Lab Method for manufacturing semiconductor devices
JP5480554B2 (en) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 Semiconductor device
TWI424506B (en) 2008-08-08 2014-01-21 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP5608347B2 (en) 2008-08-08 2014-10-15 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP5525778B2 (en) 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 Semiconductor device
TWI508282B (en) 2008-08-08 2015-11-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP5627071B2 (en) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8021916B2 (en) 2008-09-01 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
WO2010029859A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010029866A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101665734B1 (en) 2008-09-12 2016-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101829673B1 (en) 2008-09-12 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
CN102160103B (en) 2008-09-19 2013-09-11 株式会社半导体能源研究所 Display device
KR101408715B1 (en) 2008-09-19 2014-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20190123809A (en) 2008-09-19 2019-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102160105B (en) 2008-09-19 2014-06-11 株式会社半导体能源研究所 Display device and manufacturing method of the same
CN102160184B (en) 2008-09-19 2014-07-09 株式会社半导体能源研究所 Display device
WO2010038599A1 (en) 2008-10-01 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101652693B1 (en) 2008-10-03 2016-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101579050B1 (en) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101714546B (en) 2008-10-03 2014-05-14 株式会社半导体能源研究所 Display device and method for producing same
CN101719493B (en) 2008-10-08 2014-05-14 株式会社半导体能源研究所 Display device
JP5484853B2 (en) 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2010044478A1 (en) 2008-10-16 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
JP5361651B2 (en) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5442234B2 (en) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 Semiconductor device and display device
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101667909B1 (en) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101259727B1 (en) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
JP5616012B2 (en) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101603303B1 (en) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Conductive oxynitride and method for manufacturing conductive oxynitride film
TWI501401B (en) 2008-10-31 2015-09-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
KR101631454B1 (en) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit
KR101634411B1 (en) 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device and electronic device
CN101740631B (en) 2008-11-07 2014-07-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the semiconductor device
TWI574423B (en) 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
JP2010135771A (en) 2008-11-07 2010-06-17 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
TWI535037B (en) 2008-11-07 2016-05-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR20170021903A (en) 2008-11-07 2017-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing a semiconductor device
TWI536577B (en) 2008-11-13 2016-06-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR101432764B1 (en) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2010153802A (en) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
KR20190109584A (en) 2008-11-21 2019-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI585955B (en) 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 Photosensor and display device
TWI606593B (en) 2008-11-28 2017-11-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI595297B (en) 2008-11-28 2017-08-11 半導體能源研究所股份有限公司 Liquid crystal display device
KR101472771B1 (en) 2008-12-01 2014-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI613489B (en) 2008-12-03 2018-02-01 半導體能源研究所股份有限公司 Liquid crystal display device
JP5491833B2 (en) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 Semiconductor device
WO2010071034A1 (en) 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
WO2010071183A1 (en) 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI476915B (en) 2008-12-25 2015-03-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8330156B2 (en) 2008-12-26 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with a plurality of oxide clusters over the gate insulating layer
TWI549198B (en) 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR101648927B1 (en) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
CN101840936B (en) 2009-02-13 2014-10-08 株式会社半导体能源研究所 Semiconductor device including a transistor, and manufacturing method of the semiconductor device
US8247812B2 (en) 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8278657B2 (en) 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101671210B1 (en) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
EP2406826B1 (en) 2009-03-12 2017-08-23 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
TWI485781B (en) 2009-03-13 2015-05-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the semiconductor device
US8450144B2 (en) 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI617029B (en) 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 Semiconductor device
KR101681884B1 (en) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
KR101752640B1 (en) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI485851B (en) 2009-03-30 2015-05-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI489628B (en) 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US8338226B2 (en) 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5455753B2 (en) 2009-04-06 2014-03-26 株式会社半導体エネルギー研究所 IC card
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI476917B (en) 2009-04-16 2015-03-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
KR101842182B1 (en) 2009-05-01 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5751762B2 (en) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 semiconductor device
JP5396335B2 (en) 2009-05-28 2014-01-22 株式会社半導体エネルギー研究所 Touch panel
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
JP5564331B2 (en) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
EP2256795B1 (en) 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
WO2011001715A1 (en) 2009-06-29 2011-01-06 シャープ株式会社 Oxide semiconductor, thin-film transistor array substrate and manufacturing method therefor, and display device
KR20120031026A (en) 2009-06-30 2012-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101732859B1 (en) 2009-06-30 2017-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101457837B1 (en) 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011001880A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5663214B2 (en) 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20200047748A (en) 2009-07-03 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101476817B1 (en) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including transistor and manufacturing method thereof
KR101791370B1 (en) 2009-07-10 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2452362B1 (en) 2009-07-10 2017-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101643835B1 (en) 2009-07-10 2016-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101739154B1 (en) 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101782176B1 (en) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011010544A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101907366B1 (en) 2009-07-18 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101785992B1 (en) 2009-07-24 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20190038952A (en) 2009-07-31 2019-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102057299B1 (en) 2009-07-31 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013561A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5663231B2 (en) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 Light emitting device
TWI596741B (en) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP5642447B2 (en) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 Semiconductor device
TWI559501B (en) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI626731B (en) 2009-08-07 2018-06-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI528527B (en) 2009-08-07 2016-04-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
WO2011027664A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR101836532B1 (en) 2009-09-04 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101707433B1 (en) 2009-09-04 2017-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and method for manufacturing the same
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101746198B1 (en) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
CN102484140B (en) 2009-09-04 2015-04-22 株式会社半导体能源研究所 Manufacturing method of semiconductor device
US9805641B2 (en) 2009-09-04 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101882887B1 (en) 2009-09-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and manufacturing method thereof
KR20190045396A (en) 2009-09-16 2019-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
WO2011034012A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
KR101700470B1 (en) 2009-09-16 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device including the driver circuit, and electronic device including the display device
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
KR20180031077A (en) 2009-09-24 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
CN102549758B (en) 2009-09-24 2015-11-25 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
WO2011036987A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102474256B (en) 2009-09-24 2016-03-02 株式会社半导体能源研究所 Drive circuit, comprise the display device of drive circuit and comprise the electronic apparatus of display device
TWI512997B (en) 2009-09-24 2015-12-11 Semiconductor Energy Lab Semiconductor device, power circuit, and manufacturing method of semiconductor device
KR101707260B1 (en) 2009-09-24 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011037010A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
KR101608923B1 (en) 2009-09-24 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
KR101883330B1 (en) 2009-09-30 2018-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Redox capacitor and manufacturing method thereof
KR101767035B1 (en) 2009-10-01 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20120084751A (en) 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR101623619B1 (en) 2009-10-08 2016-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer and semiconductor device
KR102108943B1 (en) 2009-10-08 2020-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011043218A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101693816B1 (en) 2009-10-09 2017-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register and display device and driving method thereof
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103984176B (en) 2009-10-09 2016-01-20 株式会社半导体能源研究所 Liquid crystal indicator and comprise the electronic equipment of this liquid crystal indicator
EP2486595B1 (en) 2009-10-09 2019-10-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101820973B1 (en) 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the semiconductor device
CN102549638B (en) 2009-10-09 2015-04-01 株式会社半导体能源研究所 Light-emitting display device and electronic device including the same
WO2011043164A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101959693B1 (en) 2009-10-09 2019-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
EP2486569B1 (en) 2009-10-09 2019-11-20 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device
KR101680047B1 (en) 2009-10-14 2016-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101903918B1 (en) 2009-10-16 2018-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
KR101772639B1 (en) 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101801538B1 (en) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
KR101717460B1 (en) 2009-10-16 2017-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the liquid crystal display device
KR102081795B1 (en) 2009-10-16 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic apparatus having the same
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101490726B1 (en) 2009-10-21 2015-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011049230A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR20120096463A (en) 2009-10-21 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including display device
CN102598280B (en) 2009-10-21 2016-05-18 株式会社半导体能源研究所 Liquid crystal display device and comprise the electronic equipment of this liquid crystal display device
WO2011048959A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101789309B1 (en) 2009-10-21 2017-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Analog circuit and semiconductor device
KR20130130879A (en) 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
CN102598247B (en) 2009-10-29 2015-05-06 株式会社半导体能源研究所 Semiconductor device
CN102598246B (en) 2009-10-29 2016-03-16 株式会社半导体能源研究所 Semiconductor device
KR101740684B1 (en) 2009-10-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power diode, rectifier, and semiconductor device including the same
KR20120099657A (en) 2009-10-30 2012-09-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR20120102653A (en) 2009-10-30 2012-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN105070717B (en) 2009-10-30 2019-01-01 株式会社半导体能源研究所 Semiconductor device
KR102019239B1 (en) 2009-10-30 2019-09-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101752348B1 (en) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011052413A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device, and electronic device
EP2494692B1 (en) 2009-10-30 2016-11-23 Semiconductor Energy Laboratory Co. Ltd. Logic circuit and semiconductor device
CN102484471B (en) 2009-10-30 2015-04-01 株式会社半导体能源研究所 Driver circuit, display device including the driver circuit, and electronic device including the display device
WO2011052344A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic appliance including the same
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052411A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR20190092631A (en) 2009-11-06 2019-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011055638A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20200047775A (en) 2009-11-06 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
CN102598279B (en) 2009-11-06 2015-10-07 株式会社半导体能源研究所 Semiconductor device
JP5539846B2 (en) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 Evaluation method, manufacturing method of semiconductor device
CN102612749B (en) 2009-11-06 2015-04-01 株式会社半导体能源研究所 Semiconductor device
CN104600074A (en) 2009-11-06 2015-05-06 株式会社半导体能源研究所 Semiconductor device
KR20120093952A (en) 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
CN102598269B (en) 2009-11-06 2015-04-01 株式会社半导体能源研究所 Semiconductor device
KR101747158B1 (en) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR102066532B1 (en) 2009-11-06 2020-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101810254B1 (en) 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and operating method thereof
KR101975741B1 (en) 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for packaging target material and method for mounting target
KR101751560B1 (en) 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101799265B1 (en) 2009-11-13 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011058885A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101738996B1 (en) 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Device including nonvolatile memory element
WO2011058882A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011058852A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR101800854B1 (en) 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101790365B1 (en) 2009-11-20 2017-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101693914B1 (en) 2009-11-20 2017-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101995704B1 (en) 2009-11-20 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5866089B2 (en) 2009-11-20 2016-02-17 株式会社半導体エネルギー研究所 Electronics
KR101811999B1 (en) 2009-11-20 2017-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20190109597A (en) 2009-11-20 2019-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
CN102598266B (en) 2009-11-20 2015-04-22 株式会社半导体能源研究所 Semiconductor device
KR101800852B1 (en) 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5762723B2 (en) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 Modulation circuit and semiconductor device having the same
WO2011062075A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101662359B1 (en) 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device including memory cell
KR101803254B1 (en) 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011065198A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103400857B (en) 2009-11-27 2016-12-28 株式会社半导体能源研究所 Semiconductor device and and manufacture method
WO2011065244A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101895080B1 (en) 2009-11-28 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
EP2504855A4 (en) 2009-11-28 2016-07-20 Semiconductor Energy Lab Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
WO2011065210A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
CN102648490B (en) 2009-11-30 2016-08-17 株式会社半导体能源研究所 Liquid crystal display, for driving the method for this liquid crystal display and include the electronic equipment of this liquid crystal display
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR101501420B1 (en) 2009-12-04 2015-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011068022A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068032A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101833198B1 (en) 2009-12-04 2018-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
JP5584103B2 (en) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 Semiconductor device
KR101943109B1 (en) 2009-12-04 2019-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011068037A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101840623B1 (en) 2009-12-04 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
KR20120099475A (en) 2009-12-04 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068028A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
JP2011139052A (en) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd Semiconductor memory device
KR101835300B1 (en) 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011070892A1 (en) 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102763154B (en) 2009-12-10 2015-05-20 株式会社半导体能源研究所 Display device and driving method thereof
KR20170116239A (en) 2009-12-11 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor
WO2011070905A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
JP5727204B2 (en) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101804589B1 (en) 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR102046308B1 (en) 2009-12-11 2019-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
WO2011074391A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
CN102640207A (en) 2009-12-18 2012-08-15 株式会社半导体能源研究所 Liquid crystal display device and driving method thereof
KR102020739B1 (en) 2009-12-18 2019-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including optical sensor and driving method thereof
CN102652356B (en) 2009-12-18 2016-02-17 株式会社半导体能源研究所 Semiconductor device
WO2011074409A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102067919B1 (en) 2009-12-18 2020-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of display device and display device
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102668377B (en) 2009-12-18 2015-04-08 株式会社半导体能源研究所 Non-volatile latch circuit and logic circuit, and semiconductor device using the same
CN105429621B (en) 2009-12-23 2019-03-19 株式会社半导体能源研究所 Semiconductor device
WO2011077926A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102111309B1 (en) 2009-12-25 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
CN105789204A (en) 2009-12-25 2016-07-20 株式会社半导体能源研究所 Semiconductor device
US8441009B2 (en) 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101870119B1 (en) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101613701B1 (en) 2009-12-25 2016-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving liquid crystal display device
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
MY158782A (en) 2009-12-25 2016-11-15 Semiconductor Energy Lab Memory Device, Semiconductor Device, And Electronic Device
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101872678B1 (en) 2009-12-28 2018-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device
KR101772150B1 (en) 2009-12-28 2017-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device and semiconductor device
KR101436120B1 (en) 2009-12-28 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
CN105702631B (en) 2009-12-28 2019-05-28 株式会社半导体能源研究所 Semiconductor devices
KR101082514B1 (en) 2009-12-31 2011-11-10 재단법인 포항산업과학연구원 Metal oxide composition, and sintered material and conducting membrane using the smae
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN102696109B (en) 2010-01-15 2015-08-19 株式会社半导体能源研究所 The driving method of semiconductor device and semiconductor device
KR101791279B1 (en) 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101698537B1 (en) 2010-01-15 2017-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101748763B1 (en) 2010-01-15 2017-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
WO2011086847A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101943807B1 (en) 2010-01-15 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
WO2011090087A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display method of display device
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
WO2011089843A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
KR20180010327A (en) 2010-01-20 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
CN102804603B (en) 2010-01-20 2015-07-15 株式会社半导体能源研究所 Signal processing circuit and method for driving the same
CN102713999B (en) 2010-01-20 2016-01-20 株式会社半导体能源研究所 Electronic equipment and electronic system
WO2011089849A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
CN105761688B (en) 2010-01-20 2019-01-01 株式会社半导体能源研究所 The driving method of liquid crystal display
KR101750126B1 (en) 2010-01-20 2017-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving display device and liquid crystal display device
KR101745749B1 (en) 2010-01-20 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102714209B (en) 2010-01-22 2015-09-16 株式会社半导体能源研究所 Semiconductor storage unit and driving method thereof
KR101829309B1 (en) 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101952555B1 (en) 2010-01-22 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101878224B1 (en) 2010-01-24 2018-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
TWI525377B (en) 2010-01-24 2016-03-11 半導體能源研究所股份有限公司 Display device
WO2011089853A1 (en) 2010-01-24 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120112803A (en) 2010-01-29 2012-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device including the same
WO2011093003A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101399610B1 (en) 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011096275A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR101926336B1 (en) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011096286A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device
WO2011096264A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096270A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105405747B (en) 2010-02-05 2020-03-13 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011099342A1 (en) 2010-02-10 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101924318B1 (en) 2010-02-12 2018-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
KR101814222B1 (en) 2010-02-12 2018-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device
KR101830196B1 (en) 2010-02-12 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
KR101775180B1 (en) 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101838130B1 (en) 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
EP2534679A4 (en) 2010-02-12 2016-03-16 Semiconductor Energy Lab Semiconductor device and driving method of the same
CN102741915B (en) 2010-02-12 2015-12-16 株式会社半导体能源研究所 Display device and driving method
KR102070537B1 (en) 2010-02-18 2020-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
CN102754162B (en) 2010-02-19 2015-12-09 株式会社半导体能源研究所 The driving method of semiconductor devices and semiconductor devices
KR101848684B1 (en) 2010-02-19 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device
WO2011102190A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
KR101686089B1 (en) 2010-02-19 2016-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101889285B1 (en) 2010-02-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
WO2011102217A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5740169B2 (en) 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 Method for manufacturing transistor
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102812421B (en) 2010-02-19 2016-05-18 株式会社半导体能源研究所 Display device and driving method thereof
KR101906151B1 (en) 2010-02-19 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and display device using the same
CN102754163B (en) 2010-02-19 2015-11-25 株式会社半导体能源研究所 Semiconductor devices
WO2011105180A1 (en) 2010-02-23 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device, semiconductor device, and driving method thereof
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106328085A (en) 2010-02-26 2017-01-11 株式会社半导体能源研究所 Display device and driving method thereof
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011105210A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN106340542A (en) 2010-02-26 2017-01-18 株式会社半导体能源研究所 Method for manufacturing semiconductor device
WO2011105218A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and e-book reader provided therewith
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102782859B (en) 2010-02-26 2015-07-29 株式会社半导体能源研究所 The manufacture method of semiconductor device
WO2011105183A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
WO2011108367A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and rfid tag including boosting circuit
CN102783030B (en) 2010-03-02 2016-01-13 株式会社半导体能源研究所 Output of pulse signal circuit and shift register
KR101798645B1 (en) 2010-03-02 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Pulse signal output circuit and shift register
DE112011100749B4 (en) 2010-03-02 2015-06-11 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
WO2011108475A1 (en) 2010-03-04 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
KR101929190B1 (en) 2010-03-05 2018-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011108346A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
WO2011108374A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011111504A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
KR101784676B1 (en) 2010-03-08 2017-10-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011111522A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20190018049A (en) 2010-03-08 2019-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR101898297B1 (en) 2010-03-08 2018-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
DE112011100841T5 (en) 2010-03-08 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the semiconductor device
US8900362B2 (en) 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN102782622B (en) 2010-03-12 2016-11-02 株式会社半导体能源研究所 The driving method of display device
KR101840185B1 (en) 2010-03-12 2018-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving circuit and method for driving display device
KR101773992B1 (en) 2010-03-12 2017-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102822978B (en) 2010-03-12 2015-07-22 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
CN102812547B (en) 2010-03-19 2015-09-09 株式会社半导体能源研究所 Semiconductor device
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101840797B1 (en) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (en) 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
WO2011118351A1 (en) 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862539B1 (en) 2010-03-26 2018-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
DE112011101069B4 (en) 2010-03-26 2018-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
WO2011118509A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011122514A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Power supply device and driving method thereof
WO2011122312A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR20130069583A (en) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field-sequential display device
KR20130032304A (en) 2010-04-02 2013-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20130014562A (en) 2010-04-02 2013-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
KR101810592B1 (en) 2010-04-07 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101884031B1 (en) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
DE112011101260T5 (en) 2010-04-09 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. A liquid crystal display device and method for driving the same
KR101884798B1 (en) 2010-04-09 2018-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
KR101881729B1 (en) 2010-04-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Deposition method and method for manufacturing semiconductor device
WO2011129233A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011237418A (en) 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd Current measurement method, semiconductor device inspection method, semiconductor device and characteristic evaluation circuit
KR20130061678A (en) 2010-04-16 2013-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power source circuit
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102859705B (en) 2010-04-23 2015-12-09 株式会社半导体能源研究所 The manufacture method of semiconductor device and semiconductor device
KR101689378B1 (en) 2010-04-23 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101324760B1 (en) 2010-04-23 2013-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20130055607A (en) 2010-04-23 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
KR101887336B1 (en) 2010-04-23 2018-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and driving method thereof
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
CN105702587B (en) 2010-04-23 2020-01-21 株式会社半导体能源研究所 Method for manufacturing semiconductor device
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
CN103109314B (en) 2010-04-28 2016-05-04 株式会社半导体能源研究所 Semiconductor display device and driving method thereof
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (en) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 Semiconductor device evaluation method
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI511236B (en) 2010-05-14 2015-12-01 Semiconductor Energy Lab Semiconductor device
KR101806271B1 (en) 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101872927B1 (en) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011145632A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101808198B1 (en) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5852793B2 (en) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
CN102893403B (en) 2010-05-21 2016-08-03 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
JP5766012B2 (en) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 Liquid crystal display
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011145706A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5714973B2 (en) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 Semiconductor device
JP5749975B2 (en) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 Photodetector and touch panel
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101894897B1 (en) 2010-06-04 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
CN102939659B (en) 2010-06-11 2016-08-17 株式会社半导体能源研究所 Semiconductor device and the manufacture method of semiconductor device
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
JP5823740B2 (en) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 I / O device
JP5797471B2 (en) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 I / O device
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011158703A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR20120000499A (en) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and semiconductor device
KR101746197B1 (en) 2010-06-25 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method and test method of semiconductor device
WO2012002236A1 (en) 2010-06-29 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
KR101822526B1 (en) 2010-06-30 2018-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101350751B1 (en) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of liquid crystal display device
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5771079B2 (en) 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 imaging device
KR20130090405A (en) 2010-07-02 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
TWI541782B (en) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 Liquid crystal display device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
KR20190077622A (en) 2010-07-02 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5792524B2 (en) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 apparatus
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20200023539A (en) 2010-07-02 2020-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101850567B1 (en) 2010-07-16 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101859361B1 (en) 2010-07-16 2018-05-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
KR101853516B1 (en) 2010-07-27 2018-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2012014952A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI565001B (en) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving the same
JP5846789B2 (en) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
KR101842181B1 (en) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5739257B2 (en) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5671418B2 (en) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 Driving method of semiconductor device
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
TWI524347B (en) 2010-08-06 2016-03-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
CN103026416B (en) 2010-08-06 2016-04-27 株式会社半导体能源研究所 Semiconductor device
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
TWI555128B (en) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and driving method thereof
CN103069717B (en) 2010-08-06 2018-01-30 株式会社半导体能源研究所 Semiconductor integrated circuit
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI605549B (en) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device
JP5832181B2 (en) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 Liquid crystal display
JP5743790B2 (en) 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 Semiconductor device
US8748224B2 (en) 2010-08-16 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5848912B2 (en) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 Control circuit for liquid crystal display device, liquid crystal display device, and electronic apparatus including the liquid crystal display device
TWI508294B (en) 2010-08-19 2015-11-11 Semiconductor Energy Lab Semiconductor device
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
JP2013009285A (en) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd Signal processing circuit and method of driving the same
JP5727892B2 (en) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 Semiconductor device
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5806043B2 (en) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5763474B2 (en) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 Optical sensor
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
US8592261B2 (en) 2010-08-27 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for designing semiconductor device
CN103081092B (en) 2010-08-27 2016-11-09 株式会社半导体能源研究所 Memory device and semiconductor devices
JP5674594B2 (en) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 Semiconductor device and driving method of semiconductor device
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2012029612A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
KR20180105252A (en) 2010-09-03 2018-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP2012256819A (en) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101824125B1 (en) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5827520B2 (en) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 Semiconductor memory device
KR101932576B1 (en) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101952235B1 (en) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101872926B1 (en) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2012256821A (en) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd Memory device
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
TWI608486B (en) 2010-09-13 2017-12-11 半導體能源研究所股份有限公司 Semiconductor device
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5815337B2 (en) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 semiconductor device
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
TWI539453B (en) 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 Memory device and semiconductor device
KR101426515B1 (en) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device
JP2012256012A (en) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd Display device
KR20180124158A (en) 2010-09-15 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and manufacturing method thereof
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101856722B1 (en) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power-insulated-gate field-effect transistor
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (en) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 Semiconductor memory device and method for driving the same
TWI539456B (en) 2010-10-05 2016-06-21 半導體能源研究所股份有限公司 Semiconductor memory device and driving method thereof
TWI556317B (en) 2010-10-07 2016-11-01 半導體能源研究所股份有限公司 Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI543158B (en) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 Semiconductor memory device and driving method thereof
WO2012057296A1 (en) 2010-10-29 2012-05-03 Semiconductor Energy Laboratory Co., Ltd. Storage device
JP5771505B2 (en) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 Receiver circuit
KR101924231B1 (en) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN103313993A (en) 2010-11-02 2013-09-18 宇部兴产株式会社 (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film by using said metal compound
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
JP6010291B2 (en) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 Driving method of display device
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
KR101973212B1 (en) 2010-11-05 2019-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2012060202A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI555205B (en) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI654764B (en) 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method
JP5770068B2 (en) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 semiconductor device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI525818B (en) 2010-11-30 2016-03-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5908263B2 (en) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 DC-DC converter
TWI590249B (en) 2010-12-03 2017-07-01 半導體能源研究所股份有限公司 Integrated circuit, method for driving the same, and semiconductor device
CN105336791B (en) 2010-12-03 2018-10-26 株式会社半导体能源研究所 Oxide semiconductor film and semiconductor device
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
TWI534905B (en) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 Display device and method for manufacturing the same
JP2012256020A (en) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method for the same
JP2012142562A (en) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd Semiconductor memory device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5784479B2 (en) 2010-12-28 2015-09-24 株式会社半導体エネルギー研究所 semiconductor device
JP5731369B2 (en) 2010-12-28 2015-06-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012151453A (en) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method of the same
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
JP5993141B2 (en) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 Storage device
JP6030298B2 (en) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 Buffer storage device and signal processing circuit
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5864054B2 (en) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 Semiconductor device
JP5852874B2 (en) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 Semiconductor device
TWI562142B (en) 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
TWI570809B (en) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5982125B2 (en) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI535032B (en) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
JP5977523B2 (en) 2011-01-12 2016-08-24 株式会社半導体エネルギー研究所 Method for manufacturing transistor
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
KR102026718B1 (en) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and detecting method
TWI572009B (en) 2011-01-14 2017-02-21 半導體能源研究所股份有限公司 Semiconductor memory device
JP5859839B2 (en) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 Storage element driving method and storage element
JP5897910B2 (en) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103348464B (en) 2011-01-26 2016-01-13 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
TWI657580B (en) 2011-01-26 2019-04-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5798933B2 (en) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 signal processing circuit
TWI602303B (en) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI570920B (en) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR20190007525A (en) 2011-01-27 2019-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI525619B (en) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 Memory circuit
KR102111015B1 (en) 2011-01-28 2020-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device and semiconductor device
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
JP6000560B2 (en) 2011-02-02 2016-09-28 株式会社半導体エネルギー研究所 Semiconductor memory device
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
TWI520273B (en) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 Semiconductor memory device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
TWI569041B (en) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 Display device
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
KR101899880B1 (en) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable lsi
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898527B2 (en) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 Semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827145B2 (en) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 Signal processing circuit
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
TWI521612B (en) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
JP2012209543A (en) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd Semiconductor device
TWI624878B (en) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
JP5933300B2 (en) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 Semiconductor device
KR101995682B1 (en) 2011-03-18 2019-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
JP5933897B2 (en) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
TWI627756B (en) 2011-03-25 2018-06-21 半導體能源研究所股份有限公司 Field-effect transistor, and memory and semiconductor circuit including the same
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI545652B (en) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6053098B2 (en) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 Semiconductor device
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
JP5879165B2 (en) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI567735B (en) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 Memory circuit, memory unit, and signal processing circuit
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5982147B2 (en) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 Light emitting device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
TWI567736B (en) 2011-04-08 2017-01-21 半導體能源研究所股份有限公司 Memory element and signal processing circuit
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5883699B2 (en) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 Programmable LSI
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6001900B2 (en) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 Signal processing circuit
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5946683B2 (en) 2011-04-22 2016-07-06 株式会社半導体エネルギー研究所 Semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
CN102760697B (en) 2011-04-27 2016-08-03 株式会社半导体能源研究所 The manufacture method of semiconductor device
KR101919056B1 (en) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor circuit
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI525615B (en) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 Semiconductor storage device
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR101963457B1 (en) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
TWI550865B (en) 2011-05-05 2016-09-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012153697A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
TWI568181B (en) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 Logic circuit and semiconductor device
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (en) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
TWI557711B (en) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 Method for driving display device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI536502B (en) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 Memory circuit and electronic device
KR101952570B1 (en) 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing the same
JP6109489B2 (en) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 EL display device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
KR101921772B1 (en) 2011-05-13 2018-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
SG11201503709SA (en) 2011-05-13 2015-07-30 Semiconductor Energy Lab Semiconductor device
JP5886128B2 (en) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6110075B2 (en) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Display device
JP5959296B2 (en) 2011-05-13 2016-08-02 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
CN107316865A (en) 2011-05-16 2017-11-03 株式会社半导体能源研究所 Programmable logic device
TWI570891B (en) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device
TWI552150B (en) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 Semiconductor storage device
TWI571058B (en) 2011-05-18 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and method of driving semiconductor device
KR102093909B1 (en) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Circuit and method of driving the same
US9117920B2 (en) 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
KR101991735B1 (en) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor integrated circuit
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102081792B1 (en) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Arithmetic circuit and method of driving the same
TWI559683B (en) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 Semiconductor integrated circuit
JP5892852B2 (en) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 Programmable logic device
JP5820335B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
JP6013682B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP5951351B2 (en) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 Adder and full adder
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6091083B2 (en) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 Storage device
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
TWI570719B (en) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 Memory device and signal processing circuit
WO2012160963A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102789808B (en) 2011-05-20 2018-03-06 株式会社半导体能源研究所 Storage arrangement and the method for driving storage arrangement
JP5886496B2 (en) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
JP5820336B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
JP6030334B2 (en) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 Storage device
JP5947099B2 (en) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 Semiconductor device
JP6082189B2 (en) * 2011-05-20 2017-02-15 株式会社半導体エネルギー研究所 Storage device and signal processing circuit
JP6013680B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP5936908B2 (en) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 Parity bit output circuit and parity check circuit
TWI614995B (en) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 Phase locked loop and semiconductor device using the same
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012161003A1 (en) 2011-05-26 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Divider circuit and semiconductor device using the same
TWI534956B (en) 2011-05-27 2016-05-21 半導體能源研究所股份有限公司 Trimming circuit and method for driving trimming circuit
JP5912844B2 (en) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 Programmable logic device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
KR20180064565A (en) 2011-06-08 2018-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target, method for manufacturing sputtering target, and method for forming thin film
JP5890251B2 (en) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 Communication method
JP2013016243A (en) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd Memory device
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6104522B2 (en) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 Semiconductor device
JP6005401B2 (en) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9112036B2 (en) 2011-06-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI575751B (en) 2011-06-16 2017-03-21 半導體能源研究所股份有限公司 Semiconductor device and a method for manufacturing the same
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
SG11201504734VA (en) 2011-06-17 2015-07-30 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US9318506B2 (en) 2011-07-08 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
KR102014876B1 (en) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
JP2013042117A (en) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6013685B2 (en) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
WO2013015091A1 (en) 2011-07-22 2013-01-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006572B2 (en) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device
JP6128775B2 (en) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
TWI575494B (en) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 Method for driving semiconductor device
JP6116149B2 (en) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 Semiconductor device
TWI659523B (en) 2011-08-29 2019-05-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP6016532B2 (en) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6050054B2 (en) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (en) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 Power insulated gate field effect transistor
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832399B2 (en) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 Light emitting device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103022012B (en) 2011-09-21 2017-03-01 株式会社半导体能源研究所 Semiconductor storage
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102108572B1 (en) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2013084333A (en) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd Shift register circuit
TWI605590B (en) 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR101506303B1 (en) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
SG11201505088UA (en) 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
CN103843146B (en) 2011-09-29 2016-03-16 株式会社半导体能源研究所 Semiconductor device
JP5806905B2 (en) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013093561A (en) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
JP6022880B2 (en) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
JP6026839B2 (en) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5912394B2 (en) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 Semiconductor device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
CN107068765A (en) 2011-10-14 2017-08-18 株式会社半导体能源研究所 Semiconductor device
KR20130040706A (en) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
KR20130043063A (en) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI567985B (en) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR101976212B1 (en) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR102067051B1 (en) 2011-10-24 2020-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6226518B2 (en) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6082562B2 (en) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20140086954A (en) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR102012981B1 (en) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5933895B2 (en) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP6122275B2 (en) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 Display device
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6076038B2 (en) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 Method for manufacturing display device
CN103918025B (en) 2011-11-11 2016-12-21 株式会社半导体能源研究所 Signal-line driving circuit and liquid crystal indicator
US10026847B2 (en) 2011-11-18 2018-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
US8772094B2 (en) 2011-11-25 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6099368B2 (en) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 Storage device
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
JP6147992B2 (en) 2011-11-30 2017-06-14 株式会社半導体エネルギー研究所 Semiconductor device
TWI591611B (en) 2011-11-30 2017-07-11 半導體能源研究所股份有限公司 Semiconductor display device
KR102072244B1 (en) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8956929B2 (en) 2011-11-30 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI621185B (en) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2786404A4 (en) 2011-12-02 2015-07-15 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP6050662B2 (en) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP2013137853A (en) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd Storage device and driving method thereof
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP6105266B2 (en) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 Storage device
KR102084274B1 (en) 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013149953A (en) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
JP2013130802A (en) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device, image display device, storage device, and electronic apparatus
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI580047B (en) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 Semiconductor device
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6053490B2 (en) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6012450B2 (en) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP6033071B2 (en) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 Semiconductor device
TWI569446B (en) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI580189B (en) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 Level-shift circuit and semiconductor integrated circuit
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (en) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI584383B (en) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR102103913B1 (en) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6027898B2 (en) 2012-01-23 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2013111756A1 (en) 2012-01-25 2013-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6091905B2 (en) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
TWI581431B (en) 2012-01-26 2017-05-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI604609B (en) 2012-02-02 2017-11-01 半導體能源研究所股份有限公司 Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102101167B1 (en) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP5981157B2 (en) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 Semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6125850B2 (en) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (en) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd Storage element and semiconductor element
JP6220526B2 (en) 2012-02-29 2017-10-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6151530B2 (en) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 Image sensor, camera, and surveillance system
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP2013183001A (en) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6046514B2 (en) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
JP6100559B2 (en) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 Semiconductor memory device
JP6041707B2 (en) 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 Latch circuit and semiconductor device
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104160295B (en) 2012-03-09 2017-09-15 株式会社半导体能源研究所 The driving method of semiconductor device
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
KR102108248B1 (en) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, transistor, and semiconductor device
JP6168795B2 (en) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
JP6169376B2 (en) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 Battery Management Unit, Protection Circuit, Power Storage Device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP2013229013A (en) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd Array controller and storage system
KR102044725B1 (en) 2012-03-29 2019-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power supply control device
JP6139187B2 (en) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 Semiconductor device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP5975907B2 (en) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
JP2013236068A (en) 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method therefor
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6128906B2 (en) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
JP6059566B2 (en) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2013154195A1 (en) 2012-04-13 2013-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6143423B2 (en) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP6076612B2 (en) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6001308B2 (en) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 Semiconductor device
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6199583B2 (en) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 Semiconductor device
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6100071B2 (en) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6228381B2 (en) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
JP6035195B2 (en) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
CN106298772A (en) 2012-05-02 2017-01-04 株式会社半导体能源研究所 Pld
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
JP6243136B2 (en) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 Switching converter
JP2013250965A (en) 2012-05-02 2013-12-12 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method thereof
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6227890B2 (en) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 Signal processing circuit and control circuit
KR102025722B1 (en) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Temperature sensor circuit and semiconductor device including temperature sensor circuit
KR20130125717A (en) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR20150018557A (en) 2012-05-10 2015-02-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102069158B1 (en) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
CN107403840A (en) 2012-05-10 2017-11-28 株式会社半导体能源研究所 Semiconductor device
DE102013022449B3 (en) 2012-05-11 2019-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102087443B1 (en) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP6250955B2 (en) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP6050721B2 (en) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
WO2013176199A1 (en) 2012-05-25 2013-11-28 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
KR20130132271A (en) 2012-05-25 2013-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving memory element
JP2014003594A (en) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device and method of driving the same
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (en) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 Programmable logic device
WO2013180040A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
JP6158588B2 (en) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 Light emitting device
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
JP6208469B2 (en) 2012-05-31 2017-10-04 株式会社半導体エネルギー研究所 Semiconductor device
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
JP6108960B2 (en) 2012-06-01 2017-04-05 株式会社半導体エネルギー研究所 Semiconductor devices and processing equipment
KR20150023547A (en) 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and alarm device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014027263A (en) 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
JP5809605B2 (en) * 2012-06-22 2015-11-11 光洋應用材料科技股▲分▼有限公司 Method for producing indium gallium zinc oxide composition
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102082794B1 (en) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of driving display device, and display device
KR102099445B1 (en) 2012-06-29 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR20140002496A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
WO2014002920A1 (en) 2012-06-29 2014-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6310194B2 (en) 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 Semiconductor device
KR102099262B1 (en) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
JP2014032399A (en) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP6006558B2 (en) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
KR20200032261A (en) 2012-07-20 2020-03-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the display device
KR102078213B1 (en) 2012-07-20 2020-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
DE112013003606T5 (en) 2012-07-20 2015-04-16 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6185311B2 (en) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 Power supply control circuit and signal processing circuit
JP2014042004A (en) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
KR20140013931A (en) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
JP6224931B2 (en) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP2014045175A (en) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6134598B2 (en) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 Semiconductor device
WO2014021442A1 (en) 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device
WO2014021356A1 (en) 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
KR20140020749A (en) 2012-08-10 2014-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI581404B (en) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
CN104584229B (en) 2012-08-10 2018-05-15 株式会社半导体能源研究所 Semiconductor device and its manufacture method
JP6220597B2 (en) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6211843B2 (en) 2012-08-10 2017-10-11 株式会社半導体エネルギー研究所 Semiconductor device
JP2014057296A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
JP2014199899A (en) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 Semiconductor device
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014057298A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (en) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Radiation detection panel, radiation imaging device, and diagnostic imaging device
DE102013216824A1 (en) 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140029202A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20140029181A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
TWI611511B (en) 2012-08-31 2018-01-11 半導體能源研究所股份有限公司 Semiconductor device
KR102088865B1 (en) 2012-09-03 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Microcontroller
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE102013217278B4 (en) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. A photodetector circuit, an imaging device, and a method of driving a photodetector circuit
CN104620390A (en) 2012-09-13 2015-05-13 株式会社半导体能源研究所 Semiconductor device
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR20140035822A (en) 2012-09-14 2014-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for fabricating the same
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TW202005098A (en) 2012-09-24 2020-01-16 日商半導體能源研究所股份有限公司 Semiconductor device
KR20140047529A (en) 2012-10-12 2014-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
JP6290576B2 (en) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 Liquid crystal display device and driving method thereof
TWI681233B (en) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 Liquid crystal display device, touch panel and method for manufacturing liquid crystal display device
JP6351947B2 (en) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
JP6059501B2 (en) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5951442B2 (en) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 Semiconductor device
KR20150067379A (en) 2012-10-17 2015-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6021586B2 (en) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device
KR102102589B1 (en) 2012-10-17 2020-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014061761A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and method for manufacturing the same
JP6283191B2 (en) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014082388A (en) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd Semiconductor device
TWI591966B (en) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 Programmable logic device and method for driving programmable logic device
KR20140050542A (en) 2012-10-19 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
JP6204145B2 (en) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 Semiconductor device
TW201840000A (en) 2012-10-24 2018-11-01 日商半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140052870A (en) 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9865743B2 (en) 2012-10-24 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide layer surrounding oxide semiconductor layer
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (en) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 Display device and electronic device
WO2014073374A1 (en) 2012-11-06 2014-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI649794B (en) 2012-11-08 2019-02-01 日商半導體能源研究所股份有限公司 The method of forming the metal oxide film and a metal oxide film,
TWI608616B (en) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 Semiconductor device
TWI605593B (en) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device
JP6220641B2 (en) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6285150B2 (en) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 Semiconductor device
TWI600157B (en) 2012-11-16 2017-09-21 半導體能源研究所股份有限公司 Semiconductor device
TWI620323B (en) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
JP6317059B2 (en) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device and display device
TWI613759B (en) 2012-11-28 2018-02-01 半導體能源研究所股份有限公司 Display device
KR20150088825A (en) 2012-11-28 2015-08-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
TWI627483B (en) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 Display device and television receiver
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
JP2014130336A (en) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd Display device
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014084152A1 (en) 2012-11-30 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI624949B (en) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 Semiconductor device
KR20140071234A (en) 2012-12-03 2014-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6320009B2 (en) 2012-12-03 2018-05-09 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US9406810B2 (en) 2012-12-03 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6254834B2 (en) 2012-12-06 2017-12-27 株式会社半導体エネルギー研究所 Semiconductor device
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (en) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 Programmable logic device and semiconductor device
KR20140082934A (en) 2012-12-25 2014-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Resistor, display device, and electronic device
CN104885230B (en) 2012-12-25 2018-02-23 株式会社半导体能源研究所 Semiconductor device
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014142986A (en) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device
KR20150099783A (en) 2012-12-28 2015-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2014143410A (en) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN110137181A (en) 2012-12-28 2019-08-16 株式会社半导体能源研究所 The manufacturing method of semiconductor device and semiconductor device
JP6329762B2 (en) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
TWI607510B (en) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method of the same
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (en) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
TWI619010B (en) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 Semiconductor device
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6223198B2 (en) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP5807076B2 (en) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
TWI618252B (en) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device
US9064596B2 (en) 2013-02-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014125979A1 (en) 2013-02-13 2014-08-21 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (en) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 Display device and electronic device
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
TWI612321B (en) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 Imaging device
TWI611567B (en) 2013-02-27 2018-01-11 半導體能源研究所股份有限公司 Semiconductor device, driver circuit, and display device
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140108120A (en) 2013-02-28 2014-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2014195243A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6141777B2 (en) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2014195241A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
US9647152B2 (en) 2013-03-01 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Sensor circuit and semiconductor device including sensor circuit
US9276125B2 (en) 2013-03-01 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140109817A (en) 2013-03-06 2014-09-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor film and semiconductor device
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (en) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 Semiconductor device
WO2014142043A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
KR20140113354A (en) 2013-03-14 2014-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014199709A (en) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 Memory device and semiconductor device
WO2014142332A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
JP6298662B2 (en) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
JP6283237B2 (en) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
TWI677193B (en) 2013-03-15 2019-11-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6355374B2 (en) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6093726B2 (en) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6272713B2 (en) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 Programmable logic device and semiconductor device
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6376788B2 (en) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP6316630B2 (en) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6395409B2 (en) 2013-03-27 2018-09-26 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP2014209209A (en) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 Display device
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (en) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6198434B2 (en) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 Display device and electronic device
JP6224338B2 (en) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device, display device, and method for manufacturing semiconductor device
JP6280794B2 (en) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 Semiconductor device and driving method thereof
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI620324B (en) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
JP6456598B2 (en) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 Display device
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6333028B2 (en) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 Memory device and semiconductor device
WO2014175296A1 (en) 2013-04-24 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6396671B2 (en) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6401483B2 (en) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI644434B (en) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI631711B (en) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 Semiconductor device
KR20140131264A (en) 2013-05-02 2014-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN105190902B (en) 2013-05-09 2019-01-29 株式会社半导体能源研究所 Semiconductor device and its manufacturing method
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
TWI621337B (en) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 Signal processing device
TWI639235B (en) 2013-05-16 2018-10-21 半導體能源研究所股份有限公司 Semiconductor device
TWI618058B (en) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW201937741A (en) 2013-05-16 2019-09-16 日商半導體能源研究所股份有限公司 Semiconductor device
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
US9454923B2 (en) 2013-05-17 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI638519B (en) 2013-05-17 2018-10-11 半導體能源研究所股份有限公司 Programmable logic device and semiconductor device
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20160012156A (en) 2013-05-20 2016-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device