JP4164562B2 - Transparent thin film field effect transistor using homologous thin film as active layer - Google Patents

Transparent thin film field effect transistor using homologous thin film as active layer Download PDF

Info

Publication number
JP4164562B2
JP4164562B2 JP2002266012A JP2002266012A JP4164562B2 JP 4164562 B2 JP4164562 B2 JP 4164562B2 JP 2002266012 A JP2002266012 A JP 2002266012A JP 2002266012 A JP2002266012 A JP 2002266012A JP 4164562 B2 JP4164562 B2 JP 4164562B2
Authority
JP
Japan
Prior art keywords
thin film
zno
field effect
effect transistor
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2002266012A
Other languages
Japanese (ja)
Other versions
JP2004103957A (en
Inventor
裕道 太田
正浩 平野
利夫 神谷
秀雄 細野
Original Assignee
Hoya株式会社
独立行政法人科学技術振興機構
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
Application filed by Hoya株式会社, 独立行政法人科学技術振興機構 filed Critical Hoya株式会社
Priority to JP2002266012A priority Critical patent/JP4164562B2/en
Priority claimed from EP02779976A external-priority patent/EP1443130B1/en
Publication of JP2004103957A publication Critical patent/JP2004103957A/en
Application granted granted Critical
Publication of JP4164562B2 publication Critical patent/JP4164562B2/en
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32264980&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4164562(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is a transparent field effect using a single crystal film or an amorphous film of a homologous compound containing ZnO as a main constituent, which is transparent to visible light and can be used as an element constituting a transparent electronic circuit, as an active layer. Type transistor.
[0002]
[Prior art and problems]
Field effect transistors are used as unit electronic elements, high frequency signal amplifying elements, liquid crystal driving elements and the like of semiconductor memory integrated circuits, and are the most widely used electronic devices at present. As a material, silicon semiconductor compounds are most widely used. Single-crystal silicon is used for high-frequency amplifying elements and integrated circuit elements that require high-speed operation, and amorphous silicon is used for liquid crystal driving that is sufficient for low-speed operation due to the demand for large area. Yes.
[0003]
Field effect transistors using silicon have sufficient performance for many applications. However, the transistor is opaque to visible light based on the optical characteristics of silicon and cannot constitute a transparent circuit. In addition, since conductive carriers are generated by irradiation with visible light, transistor characteristics deteriorate under high light irradiation. For example, when the transistor is applied as a switching element for driving a liquid crystal of a liquid crystal display, the device is opaque to visible light, so that the aperture ratio of the display pixel is small. Moreover, a photo-induced current is generated by backlight irradiation, and the switching characteristics are deteriorated. In order to prevent such deterioration, it is necessary to provide a light shielding film for cutting back light.
[0004]
Such problems of the silicon field effect transistor can be solved in principle by using a semiconductor material having a large energy bandwidth instead of silicon. Actually, an attempt has been made to manufacture a field effect transistor using ZnO which is a transparent oxide semiconductor (for example, Non-Patent Document 1). However, ZnO has drawbacks that it is difficult to reduce electrical conductivity, and a normally-off field effect transistor cannot be formed. Further, since it is difficult to form an amorphous state, an amorphous transistor suitable for a large area cannot be manufactured.
[0005]
[Non-Patent Document 1]
Nanase et al., Proceedings of the 2000 Spring Conference of the Japan Society of Applied Physics, 2000.3, 29p-YL-16
[0006]
[Means for Solving the Problems]
The present inventors previously used InGaO 3 (ZnO) m containing ZnO as a main constituent, which shows n-type electrical conduction in an amorphous state by film formation at room temperature using a pulse laser thin film deposition method. Homologous compound transparent thin films such as (m is a natural number) were grown (JP 2000-44236 A, Hosono et al. Philosophical Magazine B. 81.501-515 (2001)).
[0007]
Furthermore, the present inventors have deposited an amorphous homologous thin film on a ZnO single crystal ultrathin film grown on a YSZ (yttria stabilized zirconia) substrate, and heat-diffused the obtained multilayer film at a high temperature. Developed a method for growing a homologous single crystal thin film by the “chemical solid phase epitaxial method”, named “natural superlattice homologous single crystal thin film and method for producing the same”, and applied for a patent (Japanese Patent Application No. 2001-340066).
[0008]
In the same way as the above-described method for producing a homologous single crystal thin film, the present inventor has replaced the conventional field effect transistor using silicon by using a means for heating and diffusing a complex oxide thin film epitaxially grown on a ZnO thin film. It has been found that an excellent field effect transistor can be provided.
[0009]
The present invention provides a field effect transistor using a homologous compound single crystal thin film containing ZnO as a main constituent or a homologous amorphous thin film containing ZnO as a main constituent grown by a reactive solid phase epitaxial method as an active layer To do.
[0010]
That is, the present invention provides a transparent film characterized in that (1) a homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) is used as an active layer. It is a thin film field effect transistor. (2) The transparent thin film field effect transistor according to (1) above, wherein a single crystal or amorphous homologous compound thin film having a flat surface at an atomic level is used. (3) The transparent thin film field effect transistor according to (1) above, wherein the homologous compound is a heat resistant, single crystal thin film formed on a transparent oxide single crystal substrate. (4) The transparent thin film field effect transistor according to (1) above, wherein the homologous compound is an amorphous thin film formed on a glass substrate.
[0011]
1. Homologous compound single crystal InMO 3 (ZnO) m (M = In, Fe, Ga, Al, m = 1 or more and less than 50) manufactured by reactive solid phase epitaxy, InO 1.5 layer is atomic level Since a flat thin film surface is formed, a thin film field effect transistor with little gate leakage current and less gate defects can be produced. The value of m in InMO 3 (ZnO) m is preferably an integer of 1 or more and less than 50. In principle, the value of m can be infinite, but in practice, if the value of m becomes too large, the variation of m in the film will increase, and oxygen defects will easily occur, As a result, the electrical conductivity of the film increases, making it difficult to make a normally-off FET.
[0012]
2. The band gap energy of the homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, where m is an integer from 1 to less than 50) containing ZnO as the main component is larger than 3.3 eV. Transparent to visible light having a wavelength of 400 nm or more. Therefore, by using a homologous compound single crystal InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) thin film as an active layer, visible light transmittance is high and visible. A thin-film field-effect transistor that does not generate light-induced current due to light can be manufactured.
[0013]
3. In addition, the homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) produced by reactive solid phase epitaxial method has a stoichiometric composition. The homologous compound single crystal InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) is a very good insulator near room temperature. By using a thin film as an active layer, a transparent thin film field effect transistor having a normally-off operation and good switching characteristics can be manufactured.
[0014]
An amorphous state in which a homologous compound containing ZnO is formed at room temperature by a reactive solid phase epitaxial method is stable up to a high temperature of about 1000 ° C., and the electron carrier mobility in that state is 10 times that of amorphous silicon. More than double. Therefore, a field effect transistor using a homologous amorphous thin film as an active layer has a higher visible light transmittance than a silicon amorphous field effect transistor, operates stably against light irradiation, and operates at a higher speed. I can expect that.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
The substrate of a homologous compound single crystal thin film containing ZnO as a main constituent used in the present invention has heat resistance and is a transparent oxide single crystal substrate, for example, YSZ (yttria stabilized zirconia), sapphire, MgO, ZnO. Etc. are used. Among these, YSZ is most preferable because it has a lattice constant close to that of a homologous compound containing ZnO and does not chemically react with the compound at a temperature of 1400 ° C. or lower. The surface mean square roughness Rms of these substrates is preferably 1.0 nm or less. Rms can be calculated by scanning a 1 μm square with an atomic force microscope, for example.
[0016]
When using a homologous compound amorphous thin film containing ZnO, the substrate does not need to have heat resistance, and an inexpensive glass substrate can be used. The flatness may be about the same as that of a glass substrate used for an amorphous silicon field effect transistor.
[0017]
A super-flattened surface can be obtained by heating an oxide single crystal substrate such as YSZ to 1000 ° C. or higher in the air or in vacuum. A structure reflecting the crystal structure appears on the surface of the ultra flattened oxide single crystal substrate. That is, it is a structure composed of a terrace having a width of about several hundred nm and steps having a height of about sub-nm, and is generally called an atomically flattened structure.
[0018]
The terrace portion is composed of atoms arranged on a plane, and is a completely flattened surface if the presence of some defects is ignored. Due to the presence of steps, the entire substrate is not a completely planarized surface. If this structure is expressed as roughness Rms by the mean square roughness measurement method, Rms is 1.0 nm or less. Rms is a value calculated by, for example, scanning a 1 μm square range with an atomic force microscope.
[0019]
A ZnO single crystal thin film having an atomic flat surface is epitaxially grown on the obtained heat-resistant transparent oxide substrate having an atomic flat surface by MBE, pulsed laser deposition (PLD), or the like. Next, a homologous compound thin film described as InMO 3 (ZnO) m (M = In, Fe, Ga, Al, m = 1 or more and less than 50) is used as a target on the ZnO thin film, and the oxide The polycrystalline sintered body is used to grow by MBE method, pulse laser deposition method (PLD method) or the like.
[0020]
The obtained thin film does not need to be a single crystal film, and may be a polycrystalline film or an amorphous film. Finally, a high melting point compound such as YSZ or Al 2 O 3 is covered so as to cover the entire thin film, and a heat diffusion treatment is performed at a high temperature of 1300 ° C. or higher and in an atmospheric pressure containing ZnO vapor. The reason for covering with the high melting point compound is to avoid contact between ZnO vapor, which will be described later, and the surface of the thin film.
[0021]
Since ZnO has a high vapor pressure, if no ZnO vapor is added to the atmosphere, ZnO will evaporate from the film during the heat diffusion process, and the film composition after the heat diffusion process will change drastically, resulting in a good quality crystalline film. Cannot be obtained. Therefore, the reaction vessel is filled with 5% by volume or more of ZnO with respect to the vessel volume. The ZnO to be filled is preferably a powder or a sintered body. ZnO is evaporated from the ZnO powder by heat diffusion treatment at a high temperature, the ZnO vapor pressure inside the reaction vessel is increased, and the evaporation of ZnO in the thin film can be suppressed.
[0022]
InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) and ZnO film diffuse and react with each other, and if the temperature is set appropriately, uniform composition InMO 3 (ZnO) m ′ (M = In, Fe, Ga, or Al, m ′ = 1 or more and less than 50). m ′ is determined from InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) and a ZnO film thickness ratio. The ZnO film thickness is less than 5 nm, and InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) When the film thickness exceeds 100 nm, m = m ′.
[0023]
A suitable temperature is 800 ° C or higher and 1600 ° C or lower, more preferably 1200 ° C or higher and 1500 ° C or lower. Diffusion is slow below 800 ° C, and uniform composition of InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = integer between 1 and 50) cannot be obtained. Further, if the temperature exceeds 1600 ° C., the evaporation of ZnO cannot be suppressed, and uniform composition InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and less than 50) cannot be obtained.
[0024]
Single crystal thin film obtained, since the MO 3 (ZnO) m layer can be regarded as a natural superlattice structure sandwiched by InO 1.5 layers, present at the interface between the MO 3 (ZnO) m layer and InO 1.5 layer A quantum effect occurs in electrons. For this reason, the obtained single crystal thin film can be used as a high-frequency electronic device material similarly to the artificial superlattice structure.
[0025]
In addition, the homologous single crystal film containing ZnO obtained by reactive solid phase epitaxial growth is close to the stoichiometric composition, exhibits high insulation of 10 8 W · cm or more at room temperature, and is a normally-off field effect type. Suitable for transistors.
[0026]
A top-gate MIS field effect transistor using the obtained homologous single crystal thin film containing ZnO as a main constituent component as an active layer can be produced. As shown in FIG. 3, first, a metal film for a gate insulating film 3 and a gate electrode 4 is formed on a homologous single crystal thin film 2 containing ZnO epitaxially grown on a substrate 1 as a main component. Al 2 O 3 is most suitable for the gate insulating film 3. Au, Ag, Al, Cu or the like can be used for the metal film for the gate electrode 4. The gate electrode 4 is produced by the optical lithography method and dry etching or lift-off method, and finally the source electrode 5 and the drain electrode 6 are produced. The shape of the field effect transistor of the present invention is not limited to the top gate type MIS field effect transistor (MIS-FET), and includes a J-FET and the like.
[0027]
Similarly, a top-gate MIS field effect transistor can be produced using a homologous amorphous thin film containing ZnO as a main constituent. In the case of an amorphous thin film, since it is not necessary to perform epitaxial growth, ZnO epitaxial growth and a high temperature annealing process can be eliminated. Therefore, a gate electrode can be formed between the substrate and the film, and a bottom gate type MIS field effect transistor can also be manufactured.
[0028]
【Example】
Example 1 in which the present invention is described in detail with reference to the following examples
1. Preparation of single crystal InGaO 3 (ZnO) 5 thin film
A 2 nm thick ZnO thin film was epitaxially grown on a YSZ (111) single crystal substrate at a substrate temperature of 700 ° C. by the PLD method. Next, the substrate temperature was cooled to room temperature, and a 150 nm thick polycrystalline InGaO 3 (ZnO) 5 thin film was deposited on the ZnO epitaxial thin film by PLD. The two-layer film thus produced was taken out into the atmosphere, subjected to heat diffusion treatment at 1400 ° C. for 30 minutes in the atmosphere using an electric furnace, and then cooled to room temperature.
[0029]
As a result of XRD measurement, as shown in FIG. 1, the thin film obtained by heating is single-crystal InGaO 3 (ZnO) 5 , and as shown in FIG. It was a flat surface at an atomic level consisting of a flat terrace and a step of 2 nm in height. An attempt was made to measure the conductivity of a single crystal InGaO 3 (ZnO) 5 thin film by the DC four-terminal method, but the measurement was not possible due to the high insulating properties of the film. The produced single crystal InGaO 3 (ZnO) 5 thin film can be said to be an insulator. The band gap of InGaO 3 (ZnO) 5 was estimated to be about 3.3 eV from the light absorption spectrum measured at room temperature.
[0030]
2. Fabrication of MISFET element A top-gate MISFET element was fabricated by photolithography.
Au and amorphous Al 2 O 3 were used for the source and drain electrodes and the gate insulating film, respectively. The channel length and channel width are 0.05 mm and 0.2 mm, respectively.
[0031]
3. Characteristic evaluation of MISFET element Fig. 4 shows the current-voltage characteristics of the MISFET element measured at room temperature. When the gate voltage V G = 0V, I DS = 10 −8 A (V DS = 2.0 V), and so-called normally OFF characteristics were obtained. When V G = 10 V, a current of I DS = 1.6 × 10 −6 A flowed. This corresponds to the fact that carriers could be induced in the insulator InGaO 3 (ZnO) 5 single crystal thin film by the gate bias. A similar measurement was performed by irradiating the fabricated device with visible light, but no change in the numerical value was observed. Generation of photoinduced current in visible light was not observed.
[0032]
【The invention's effect】
The transparent thin film field effect transistor of the present invention is transparent to visible light / infrared light having a wavelength of 400 nm or more and can be normally switched off. By applying the transparent thin film field effect transistor of the present invention as a switching element of an LCD, it is possible to use backlight light effectively without any loss, and development to a see-through type display can be expected.
[Brief description of the drawings]
FIG. 1 is a graph showing the results of XRD measurement of a single crystal InGaO 3 (ZnO) 5 thin film produced in Example 1. FIG.
FIG. 2 is a drawing-substituting AFM observation photograph showing the surface structure of a single crystal InGaO 3 (ZnO) 5 thin film produced in Example 1. FIG.
FIG. 3 is a schematic diagram showing the structure of a MISFET element according to an embodiment of the present invention.
4 is a graph showing current-voltage characteristics of the MISFET element fabricated in Example 1 measured at room temperature. FIG.

Claims (4)

  1. A transparent thin-film field effect transistor using a thin film of a homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more and an integer less than 50) as an active layer.
  2. 2. The transparent thin film field effect transistor according to claim 1, wherein a single crystal or amorphous homologous compound thin film having a flat surface at an atomic level is used.
  3. 2. The transparent thin film field effect transistor according to claim 1, wherein the homologous compound is a heat resistant, single crystal thin film formed on a transparent oxide single crystal substrate.
  4. 2. The transparent thin film field effect transistor according to claim 1, wherein the homologous compound is an amorphous thin film formed on a glass substrate.
JP2002266012A 2002-09-11 2002-09-11 Transparent thin film field effect transistor using homologous thin film as active layer Active JP4164562B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002266012A JP4164562B2 (en) 2002-09-11 2002-09-11 Transparent thin film field effect transistor using homologous thin film as active layer

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002266012A JP4164562B2 (en) 2002-09-11 2002-09-11 Transparent thin film field effect transistor using homologous thin film as active layer
EP02779976A EP1443130B1 (en) 2001-11-05 2002-10-31 Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US10/494,247 US7061014B2 (en) 2001-11-05 2002-10-31 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
PCT/JP2002/011404 WO2003040441A1 (en) 2001-11-05 2002-10-31 Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

Publications (2)

Publication Number Publication Date
JP2004103957A JP2004103957A (en) 2004-04-02
JP4164562B2 true JP4164562B2 (en) 2008-10-15

Family

ID=32264980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002266012A Active JP4164562B2 (en) 2002-09-11 2002-09-11 Transparent thin film field effect transistor using homologous thin film as active layer

Country Status (1)

Country Link
JP (1) JP4164562B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8685803B2 (en) 2009-12-09 2014-04-01 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
US8686426B2 (en) 2012-04-02 2014-04-01 Samsung Display Co., Ltd. Thin film transistor having plural semiconductive oxides, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor
US8723174B2 (en) 2010-06-02 2014-05-13 Sharp Kabushiki Kaisha Thin film transistor, contact structure, substrate, display device, and methods for manufacturing the same
US8743307B2 (en) 2011-11-04 2014-06-03 Samsung Display Co, Ltd. Display device
US8865516B2 (en) 2009-06-29 2014-10-21 Sharp Kabushiki Kaisha Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
US8912027B2 (en) 2012-07-24 2014-12-16 Samsung Display Co., Ltd Display device and method of manufacturing the same
US8957415B2 (en) 2012-05-21 2015-02-17 Samsung Display Co., Ltd. Thin film transistor and thin film transistor array panel including the same
US9024311B2 (en) 2009-06-24 2015-05-05 Sharp Kabushiki Kaisha Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device
US9123820B2 (en) 2010-05-31 2015-09-01 Sharp Kabushiki Kaisha Thin film transistor including semiconductor oxide layer having reduced resistance regions
US9177974B2 (en) 2009-11-09 2015-11-03 Sharp Kabushiki Kaisha Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate with gate insulating film not provided where auxiliary capacitor is provided
US9190523B2 (en) 2011-09-22 2015-11-17 Samsung Display Co., Ltd. Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same
US9299474B2 (en) 2010-07-30 2016-03-29 Samsung Display Co., Ltd. Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor

Families Citing this family (1793)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP4620046B2 (en) * 2004-03-12 2011-01-26 独立行政法人科学技術振興機構 Thin film transistor and manufacturing method thereof
WO2005114256A1 (en) * 2004-05-24 2005-12-01 Fukuda X'tal Laboratory ZnO SINGLE CRYSTAL AS SUPER HIGH SPEED SCINTILLATOR AND METHOD FOR PREPARATION THEREOF
JP5126730B2 (en) * 2004-11-10 2013-01-23 キヤノン株式会社 Method for manufacturing field effect transistor
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CA2585071A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
WO2006051994A2 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Light-emitting device
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN102945857B (en) 2004-11-10 2015-06-03 佳能株式会社 Amorphous oxide and field effect transistor
JP5126729B2 (en) * 2004-11-10 2013-01-23 キヤノン株式会社 Image display device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP5053537B2 (en) * 2004-11-10 2012-10-17 キヤノン株式会社 Semiconductor device using amorphous oxide
JP5138163B2 (en) * 2004-11-10 2013-02-06 キヤノン株式会社 Field effect transistor
TWI412138B (en) 2005-01-28 2013-10-11 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2006235476A (en) 2005-02-28 2006-09-07 Fuji Photo Film Co Ltd Optical device, optical unit and imaging apparatus
JP2006235479A (en) 2005-02-28 2006-09-07 Fuji Photo Film Co Ltd Optical element, optical unit, and imaging apparatus
US8030643B2 (en) * 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US7928938B2 (en) 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
US7710739B2 (en) 2005-04-28 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8847861B2 (en) * 2005-05-20 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device, method for driving the same, and electronic device
TWI429327B (en) 2005-06-30 2014-03-01 Semiconductor Energy Lab Semiconductor device, display device, and electronic appliance
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP4767616B2 (en) * 2005-07-29 2011-09-07 富士フイルム株式会社 Semiconductor device manufacturing method and semiconductor device
JP4738931B2 (en) * 2005-07-29 2011-08-03 富士フイルム株式会社 Nanoparticle dispersion, semiconductor device manufacturing method using the same, and semiconductor device
JP4846296B2 (en) * 2005-08-03 2011-12-28 富士フイルム株式会社 Electrochromic display element
JP4850457B2 (en) * 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP4981283B2 (en) * 2005-09-06 2012-07-18 キヤノン株式会社 Thin film transistor using amorphous oxide layer
CN101258607B (en) * 2005-09-06 2011-01-05 佳能株式会社 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous
JP5116225B2 (en) 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
JP4732080B2 (en) * 2005-09-06 2011-07-27 キヤノン株式会社 Light emitting element
JP5058469B2 (en) * 2005-09-06 2012-10-24 キヤノン株式会社 Sputtering target and method for forming a thin film using the target
EP1764770A3 (en) * 2005-09-16 2012-03-14 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of display device
WO2007034935A1 (en) 2005-09-21 2007-03-29 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
EP1770788A3 (en) * 2005-09-29 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5064747B2 (en) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
JP5224676B2 (en) * 2005-11-08 2013-07-03 キヤノン株式会社 Manufacturing method of display device
JP4793679B2 (en) * 2005-11-10 2011-10-12 富士電機株式会社 Thin film transistor
JP5395994B2 (en) 2005-11-18 2014-01-22 出光興産株式会社 Semiconductor thin film, manufacturing method thereof, and thin film transistor
CN101309864B (en) * 2005-11-18 2012-06-27 出光兴产株式会社 Semiconductor thin film, method for producing same, and thin film transistor
JP4904789B2 (en) * 2005-11-30 2012-03-28 凸版印刷株式会社 Thin film transistor
JP5177954B2 (en) 2006-01-30 2013-04-10 キヤノン株式会社 Field effect transistor
TWI521492B (en) 2006-04-05 2016-02-11 半導體能源研究所股份有限公司 Semiconductor device, display device, and electronic device
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
US8013331B2 (en) 2006-06-19 2011-09-06 Panasonic Corporation Thin film transistor, method of manufacturing the same, and electronic device using the same
JP5328083B2 (en) 2006-08-01 2013-10-30 キヤノン株式会社 Oxide etching method
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5542297B2 (en) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 Liquid crystal display device, display module, and electronic device
JP4989309B2 (en) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 Liquid crystal display
KR101376073B1 (en) 2007-06-14 2014-03-21 삼성디스플레이 주식회사 Thin film transistor, array substrate having the transistor, and method of manufacturing the array substrate
KR101344483B1 (en) 2007-06-27 2013-12-24 삼성전자주식회사 Thin Film Transistor
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8247315B2 (en) 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
JP2009267399A (en) * 2008-04-04 2009-11-12 Fujifilm Corp Semiconductor device, manufacturing method therefor, display device, and manufacturing method therefor
US8017045B2 (en) 2008-04-16 2011-09-13 Electronics And Telecommunications Research Institute Composition for oxide semiconductor thin film and field effect transistor using the composition
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9045823B2 (en) 2008-06-10 2015-06-02 Jx Nippon Mining & Metals Corporation Sintered oxide compact target for sputtering and process for producing the same
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR20200054343A (en) 2008-07-10 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and electronic device using the same
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI450399B (en) 2008-07-31 2014-08-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP5616038B2 (en) 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI570937B (en) 2008-07-31 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI500159B (en) 2008-07-31 2015-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI500160B (en) 2008-08-08 2015-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP5525778B2 (en) 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 Semiconductor device
JP5480554B2 (en) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 Semiconductor device
TWI518800B (en) 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
TWI508282B (en) 2008-08-08 2015-11-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
TWI511299B (en) 2008-09-01 2015-12-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP5627071B2 (en) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101722913B1 (en) 2008-09-12 2017-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2010029866A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101767864B1 (en) 2008-09-12 2017-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101623224B1 (en) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101760341B1 (en) 2008-09-19 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20180125043A (en) 2008-09-19 2018-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101636755B1 (en) 2008-09-19 2016-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101999970B1 (en) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN103400838B (en) 2008-09-19 2016-03-30 株式会社半导体能源研究所 Display unit
KR101611643B1 (en) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101714546B (en) 2008-10-03 2014-05-14 株式会社半导体能源研究所 Display device and method for producing same
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101273972B1 (en) 2008-10-03 2013-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2010038820A1 (en) 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101719493B (en) 2008-10-08 2014-05-14 株式会社半导体能源研究所 Display device
JP5484853B2 (en) 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101799601B1 (en) * 2008-10-16 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting display device
JP5361651B2 (en) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101667909B1 (en) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5442234B2 (en) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 Semiconductor device and display device
KR101259727B1 (en) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
JP5616012B2 (en) * 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI478356B (en) 2008-10-31 2015-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
KR101631454B1 (en) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit
WO2010050419A1 (en) 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
KR101603303B1 (en) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Conductive oxynitride and method for manufacturing conductive oxynitride film
CN101740631B (en) 2008-11-07 2014-07-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the semiconductor device
KR20130138352A (en) 2008-11-07 2013-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2010135771A (en) 2008-11-07 2010-06-17 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
TW201921700A (en) 2008-11-07 2019-06-01 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
TWI487104B (en) 2008-11-07 2015-06-01 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI502739B (en) 2008-11-13 2015-10-01 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
KR101432764B1 (en) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5123141B2 (en) 2008-11-19 2013-01-16 株式会社東芝 Display device
JP2010153802A (en) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
KR101671660B1 (en) 2008-11-21 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic device
TWI585955B (en) 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 Photosensor and display device
TWI595297B (en) 2008-11-28 2017-08-11 半導體能源研究所股份有限公司 Liquid crystal display device
TWI506795B (en) 2008-11-28 2015-11-01 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
KR101643204B1 (en) 2008-12-01 2016-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2010156960A (en) 2008-12-03 2010-07-15 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP5491833B2 (en) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 Semiconductor device
WO2010071183A1 (en) 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101642384B1 (en) 2008-12-19 2016-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing transistor
EP2515337B1 (en) 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5590877B2 (en) 2008-12-26 2014-09-17 株式会社半導体エネルギー研究所 Semiconductor device
TWI549198B (en) 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR101648927B1 (en) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8247812B2 (en) 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (en) 2009-02-13 2014-10-08 株式会社半导体能源研究所 Semiconductor device including a transistor, and manufacturing method of the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100224880A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5504008B2 (en) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 Semiconductor device
EP2406826B1 (en) 2009-03-12 2017-08-23 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
TWI556323B (en) 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the semiconductor device
US8450144B2 (en) 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101681884B1 (en) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
KR101752640B1 (en) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI529942B (en) 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 Semiconductor device
US8927981B2 (en) 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI489628B (en) 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US8338226B2 (en) 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI535023B (en) 2009-04-16 2016-05-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
CN102422426B (en) 2009-05-01 2016-06-01 株式会社半导体能源研究所 The manufacture method of semiconductor device
JP5751762B2 (en) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 semiconductor device
JP5564331B2 (en) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
EP2256795B1 (en) 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
JP5528727B2 (en) * 2009-06-19 2014-06-25 富士フイルム株式会社 Thin film transistor manufacturing apparatus, oxide semiconductor thin film manufacturing method, thin film transistor manufacturing method, oxide semiconductor thin film, thin film transistor, and light emitting device
EP2449595B1 (en) 2009-06-30 2017-07-26 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR101457837B1 (en) 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101944656B1 (en) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
EP3573108A1 (en) 2009-06-30 2019-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101476817B1 (en) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including transistor and manufacturing method thereof
JP5663214B2 (en) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2011001822A1 (en) 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5640478B2 (en) 2009-07-09 2014-12-17 株式会社リコー Method for manufacturing field effect transistor and field effect transistor
SG10201403913PA (en) * 2009-07-10 2014-10-30 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR101422362B1 (en) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device, display panel and electronic appliance
KR101791370B1 (en) 2009-07-10 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101851403B1 (en) 2009-07-18 2018-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR101870460B1 (en) 2009-07-18 2018-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101785992B1 (en) 2009-07-24 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101913995B1 (en) 2009-07-31 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN105097946B (en) 2009-07-31 2018-05-08 株式会社半导体能源研究所 Semiconductor device and its manufacture method
KR20200003940A (en) 2009-07-31 2020-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
TWI529914B (en) 2009-08-07 2016-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP5642447B2 (en) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 Semiconductor device
TWI634642B (en) 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI596741B (en) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI528527B (en) 2009-08-07 2016-04-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101746198B1 (en) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
CN102484135B (en) 2009-09-04 2016-01-20 株式会社东芝 Thin-film transistor and manufacture method thereof
CN103151387A (en) 2009-09-04 2013-06-12 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
JP5700626B2 (en) 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 EL display device
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
CN104681447A (en) 2009-09-04 2015-06-03 株式会社半导体能源研究所 Manufacturing Method Of Semiconductor Device
KR20190140106A (en) 2009-09-04 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and method for manufacturing the same
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
KR101927922B1 (en) 2009-09-16 2018-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and manufacturing method thereof
WO2011033909A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
KR101709749B1 (en) 2009-09-16 2017-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of display device and display device
CN105428424A (en) 2009-09-16 2016-03-23 株式会社半导体能源研究所 Transistor and display device
WO2011034012A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
KR101608923B1 (en) 2009-09-24 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
CN102576677B (en) 2009-09-24 2015-07-22 株式会社半导体能源研究所 Semiconductor element and method for manufacturing the same
KR101890096B1 (en) 2009-09-24 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device including the driver circuit, and electronic appliance including the display device
KR20180031077A (en) 2009-09-24 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI512997B (en) 2009-09-24 2015-12-11 Semiconductor Energy Lab Semiconductor device, power circuit, and manufacturing method of semiconductor device
CN105161543A (en) 2009-09-24 2015-12-16 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
WO2011036987A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20120080575A (en) 2009-09-30 2012-07-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Redox capacitor and manufacturing method thereof
WO2011040213A1 (en) 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120084751A (en) 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
CN102484139B (en) 2009-10-08 2016-07-06 株式会社半导体能源研究所 Oxide semiconductor layer and semiconductor device
KR101991006B1 (en) 2009-10-08 2019-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101882350B1 (en) 2009-10-09 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
CN103984176B (en) 2009-10-09 2016-01-20 株式会社半导体能源研究所 Liquid crystal indicator and comprise the electronic equipment of this liquid crystal indicator
KR101940962B1 (en) 2009-10-09 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043162A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101843558B1 (en) 2009-10-09 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register and display device and driving method thereof
KR101754701B1 (en) 2009-10-09 2017-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101396096B1 (en) 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011043164A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101759504B1 (en) 2009-10-09 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting display device and electronic device including the same
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011046015A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR101801540B1 (en) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the liquid crystal display device
KR20200021554A (en) 2009-10-16 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic apparatus having the same
CN104992980B (en) 2009-10-16 2018-11-20 株式会社半导体能源研究所 Logic circuit and semiconductor devices
KR101772639B1 (en) 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20170130641A (en) 2009-10-21 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the same
KR101803554B1 (en) 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
EP2491594A4 (en) 2009-10-21 2015-09-16 Semiconductor Energy Lab Display device and electronic device including display device
KR101751908B1 (en) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Voltage regulator circuit
KR101847656B1 (en) 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101893128B1 (en) 2009-10-21 2018-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Analog circuit and semiconductor device
CN104485336B (en) 2009-10-21 2018-01-02 株式会社半导体能源研究所 Semiconductor devices
EP2491585B1 (en) 2009-10-21 2020-01-22 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101403629B1 (en) 2009-10-29 2014-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN104733033B (en) 2009-10-29 2018-03-02 株式会社半导体能源研究所 Semiconductor devices
KR102019239B1 (en) 2009-10-30 2019-09-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011052411A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101740684B1 (en) 2009-10-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power diode, rectifier, and semiconductor device including the same
WO2011052368A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
KR101499494B1 (en) 2009-10-30 2015-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
KR20180132979A (en) 2009-10-30 2018-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR101835155B1 (en) 2009-10-30 2018-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device, driving method of the same, and electronic appliance including the same
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101788521B1 (en) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052409A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
EP2494597A4 (en) 2009-10-30 2015-03-18 Semiconductor Energy Lab Semiconductor device
KR101796909B1 (en) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Non-linear element, display device, and electronic device
CN104681079B (en) 2009-11-06 2018-02-02 株式会社半导体能源研究所 Semiconductor device and the method for driving semiconductor device
WO2011055626A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101727469B1 (en) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101849321B1 (en) 2009-11-06 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011055668A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5539846B2 (en) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 Evaluation method, manufacturing method of semiconductor device
KR20120093952A (en) 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
KR102066532B1 (en) 2009-11-06 2020-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101930230B1 (en) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101810254B1 (en) 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and operating method thereof
CN104600074A (en) 2009-11-06 2015-05-06 株式会社半导体能源研究所 Semiconductor device
KR20200023529A (en) 2009-11-06 2020-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058866A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058865A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devi ce
KR20170072965A (en) 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target and manufacturing method thereof, and transistor
KR101975741B1 (en) 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for packaging target material and method for mounting target
KR20200011597A (en) 2009-11-13 2020-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
CN102612714B (en) 2009-11-13 2016-06-29 株式会社半导体能源研究所 Semiconductor device and driving method thereof
WO2011058864A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Device including nonvolatile memory element
WO2011058852A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR101800854B1 (en) 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101693914B1 (en) 2009-11-20 2017-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011062058A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120107079A (en) 2009-11-20 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Thin film transistor
WO2011062043A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101823861B1 (en) 2009-11-20 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
WO2011062057A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102598266B (en) 2009-11-20 2015-04-22 株式会社半导体能源研究所 Semiconductor device
CN102668063B (en) 2009-11-20 2015-02-18 株式会社半导体能源研究所 Semiconductor device
JP5762723B2 (en) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 Modulation circuit and semiconductor device having the same
KR101662359B1 (en) 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device including memory cell
WO2011065258A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20180059577A (en) 2009-11-27 2018-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101802406B1 (en) 2009-11-27 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR20190100462A (en) 2009-11-28 2019-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011065244A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR101945306B1 (en) 2009-11-28 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR101839931B1 (en) 2009-11-30 2018-03-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device, method for driving the same, and electronic device including the same
WO2011068028A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
CN102640272B (en) 2009-12-04 2015-05-20 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
JP2011139052A (en) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd Semiconductor memory device
KR101943109B1 (en) 2009-12-04 2019-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP5584103B2 (en) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 Semiconductor device
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068022A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120099475A (en) 2009-12-04 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011068106A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
WO2011068021A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
CN103746001B (en) 2009-12-04 2017-05-03 株式会社半导体能源研究所 Display device
KR102010752B1 (en) 2009-12-04 2019-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101835300B1 (en) 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011070892A1 (en) 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20170061194A (en) 2009-12-10 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and driving method thereof
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN104600105B (en) 2009-12-11 2018-05-08 株式会社半导体能源研究所 Semiconductor device
KR101481398B1 (en) 2009-12-11 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Latch circuit and cpu
KR101804589B1 (en) 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP5727204B2 (en) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
KR101729933B1 (en) 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Non-volatile latch circuit and logic circuit, and semiconductor device using the same
KR102020739B1 (en) 2009-12-18 2019-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including optical sensor and driving method thereof
KR101830195B1 (en) * 2009-12-18 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
CN105957481B (en) 2009-12-18 2019-12-31 株式会社半导体能源研究所 Display device
WO2011074409A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011074379A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
CN103219390B (en) 2009-12-18 2014-11-12 株式会社半导体能源研究所 Liquid crystal display device and electronic device
KR101913111B1 (en) 2009-12-18 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102652396B (en) 2009-12-23 2015-12-16 株式会社半导体能源研究所 Semiconductor device
WO2011077926A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8441009B2 (en) 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101434948B1 (en) 2009-12-25 2014-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101866734B1 (en) 2009-12-25 2018-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011077925A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR101301463B1 (en) 2009-12-25 2013-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101971851B1 (en) 2009-12-25 2019-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and electronic device
KR101749944B1 (en) 2009-12-28 2017-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device
KR101772150B1 (en) 2009-12-28 2017-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device and semiconductor device
KR101760537B1 (en) 2009-12-28 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR20120106873A (en) 2009-12-28 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101791279B1 (en) 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011086812A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102742003B (en) 2010-01-15 2015-01-28 株式会社半导体能源研究所 Semiconductor device
WO2011086847A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102696064B (en) 2010-01-15 2015-11-25 株式会社半导体能源研究所 Semiconductor device and electronic installation
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN102696109B (en) 2010-01-15 2015-08-19 株式会社半导体能源研究所 The driving method of semiconductor device and semiconductor device
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
WO2011089847A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
KR101889382B1 (en) 2010-01-20 2018-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electronic device and electronic system
KR20180120813A (en) 2010-01-20 2018-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electronic device
KR101842860B1 (en) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving display device
WO2011089832A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
WO2011089833A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102011801B1 (en) 2010-01-20 2019-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of liquid crystal display device
KR101789975B1 (en) 2010-01-20 2017-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101816505B1 (en) 2010-01-20 2018-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display method of display device
WO2011089841A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101952555B1 (en) 2010-01-22 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011089852A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
TWI525377B (en) 2010-01-24 2016-03-11 半導體能源研究所股份有限公司 Display device
KR102008754B1 (en) * 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
CN106057162B (en) 2010-01-24 2019-01-22 株式会社半导体能源研究所 Display device
KR101948707B1 (en) 2010-01-29 2019-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
KR20120120330A (en) 2010-01-29 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20120112803A (en) 2010-01-29 2012-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device including the same
KR20120117915A (en) 2010-02-05 2012-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011096286A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20200035488A (en) 2010-02-05 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011096264A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
CN106847816A (en) 2010-02-05 2017-06-13 株式会社半导体能源研究所 Semiconductor device
KR20120130763A (en) 2010-02-05 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR101822962B1 (en) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
KR101810261B1 (en) 2010-02-10 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101838130B1 (en) 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011099376A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
CN105336744B (en) 2010-02-12 2018-12-21 株式会社半导体能源研究所 Semiconductor device and its driving method
WO2011099359A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method
KR101811204B1 (en) 2010-02-12 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of the same
WO2011099360A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2011099343A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5776192B2 (en) * 2010-02-16 2015-09-09 株式会社リコー Field effect transistor, display element, image display apparatus and system
KR101840617B1 (en) 2010-02-18 2018-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
JP5740169B2 (en) 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 Method for manufacturing transistor
WO2011102205A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011102206A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
WO2011102190A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
WO2011102233A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105826363B (en) 2010-02-19 2020-01-14 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
KR101832119B1 (en) 2010-02-19 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102754162B (en) 2010-02-19 2015-12-09 株式会社半导体能源研究所 The driving method of semiconductor devices and semiconductor devices
CN102812421B (en) 2010-02-19 2016-05-18 株式会社半导体能源研究所 Display device and driving method thereof
WO2011102248A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR20190102090A (en) 2010-02-19 2019-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and display device using the same
CN105788645B (en) 2010-02-23 2020-03-03 株式会社半导体能源研究所 Display device, semiconductor device, and driving method thereof
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130025871A (en) 2010-02-26 2013-03-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
CN102770902B (en) 2010-02-26 2016-11-23 株式会社半导体能源研究所 Display device and driving method thereof
KR20130009978A (en) 2010-02-26 2013-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor element and deposition apparatus
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102047354B1 (en) 2010-02-26 2019-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20120120458A (en) 2010-02-26 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
WO2011105218A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and e-book reader provided therewith
KR101780841B1 (en) 2010-02-26 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011108367A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and rfid tag including boosting circuit
CN102783030B (en) 2010-03-02 2016-01-13 株式会社半导体能源研究所 Output of pulse signal circuit and shift register
KR101838628B1 (en) 2010-03-02 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Pulse signal output circuit and shift register
DE112011100749B4 (en) 2010-03-02 2015-06-11 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
WO2011108475A1 (en) 2010-03-04 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
KR101878206B1 (en) 2010-03-05 2018-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of oxide semiconductor film and manufacturing method of transistor
KR102114012B1 (en) 2010-03-05 2020-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011108374A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101791253B1 (en) 2010-03-08 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electronic device and electronic system
WO2011111505A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN110718557A (en) 2010-03-08 2020-01-21 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
DE112011100842T5 (en) 2010-03-08 2013-01-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor component and method for its production
KR101898297B1 (en) 2010-03-08 2018-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
KR101812467B1 (en) 2010-03-08 2017-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
DE112011100886T5 (en) 2010-03-12 2012-12-27 Semiconductor Energy Laboratory Co., Ltd. Driving method for display device
KR101769970B1 (en) 2010-03-12 2017-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8900362B2 (en) 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN102822978B (en) 2010-03-12 2015-07-22 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
WO2011111506A1 (en) 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving circuit and method for driving display device
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101840797B1 (en) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
WO2011114919A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (en) 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
WO2011118351A1 (en) 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101435970B1 (en) 2010-03-26 2014-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR102112065B1 (en) 2010-03-26 2020-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102822979B (en) 2010-03-26 2015-08-26 株式会社半导体能源研究所 Semiconductor device
WO2011122271A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Field-sequential display device
KR101814367B1 (en) 2010-03-31 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
WO2011122514A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Power supply device and driving method thereof
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
KR101977152B1 (en) 2010-04-02 2019-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101391964B1 (en) 2010-04-02 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 semiconductor device
KR101810592B1 (en) 2010-04-07 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
WO2011125432A1 (en) 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
CN102834861B (en) 2010-04-09 2016-02-10 株式会社半导体能源研究所 The method of liquid crystal display and this liquid crystal display of driving
KR101321833B1 (en) 2010-04-09 2013-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor memory device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101994909B1 (en) 2010-04-09 2019-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
WO2011129209A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
CN102844847B (en) 2010-04-16 2015-09-23 株式会社半导体能源研究所 The manufacture method of deposition process and semiconductor device
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
WO2011129233A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102870151B (en) 2010-04-23 2016-03-30 株式会社半导体能源研究所 Display device and its driving method
KR101636008B1 (en) 2010-04-23 2016-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
DE112011106082B3 (en) 2010-04-23 2019-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor device
KR101860467B1 (en) 2010-04-23 2018-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130055607A (en) 2010-04-23 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
DE112011101410B4 (en) 2010-04-23 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor device
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20190110632A (en) 2010-04-28 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (en) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 Semiconductor device evaluation method
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101806271B1 (en) 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
TWI511236B (en) 2010-05-14 2015-12-01 Semiconductor Energy Lab Semiconductor device
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5923248B2 (en) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 Semiconductor device
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101808198B1 (en) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5714973B2 (en) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 Semiconductor device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102906980B (en) 2010-05-21 2015-08-19 株式会社半导体能源研究所 Semiconductor device and display unit
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130082091A (en) 2010-05-21 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5766012B2 (en) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 Liquid crystal display
KR101872927B1 (en) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102906882B (en) 2010-05-21 2015-11-25 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5852793B2 (en) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5749975B2 (en) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 Photodetector and touch panel
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101894897B1 (en) 2010-06-04 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101938726B1 (en) 2010-06-11 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
JP5797471B2 (en) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 I / O device
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5823740B2 (en) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 I / O device
WO2011158703A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR20120000499A (en) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and semiconductor device
US9437454B2 (en) 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
KR101822526B1 (en) 2010-06-30 2018-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP5771079B2 (en) 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 imaging device
KR101350751B1 (en) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of liquid crystal display device
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
KR20180135118A (en) 2010-07-02 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2012002197A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI541782B (en) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 Liquid crystal display device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5792524B2 (en) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 apparatus
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN107452630A (en) 2010-07-02 2017-12-08 株式会社半导体能源研究所 Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101859361B1 (en) 2010-07-16 2018-05-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101850567B1 (en) 2010-07-16 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5917035B2 (en) 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 Semiconductor device
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012014952A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI565001B (en) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving the same
JP5846789B2 (en) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
KR101842181B1 (en) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI545587B (en) 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI524347B (en) 2010-08-06 2016-03-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
JP5832181B2 (en) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 Liquid crystal display
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
TWI688047B (en) 2010-08-06 2020-03-11 半導體能源研究所股份有限公司 Semiconductor device
TWI555128B (en) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and driving method thereof
CN103069717B (en) 2010-08-06 2018-01-30 株式会社半导体能源研究所 Semiconductor integrated circuit
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
JP5671418B2 (en) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 Driving method of semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101925159B1 (en) 2010-08-06 2018-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI559409B (en) 2010-08-16 2016-11-21 半導體能源研究所股份有限公司 Manufacturing method of semiconductor device
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5848912B2 (en) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 Control circuit for liquid crystal display device, liquid crystal display device, and electronic apparatus including the liquid crystal display device
TWI508294B (en) 2010-08-19 2015-11-11 Semiconductor Energy Lab Semiconductor device
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8685787B2 (en) * 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013009285A (en) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd Signal processing circuit and method of driving the same
JP5727892B2 (en) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 Semiconductor device
JP5806043B2 (en) * 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20200057805A (en) 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device and semiconductor device
JP5674594B2 (en) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 Semiconductor device and driving method of semiconductor device
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP5864163B2 (en) 2010-08-27 2016-02-17 株式会社半導体エネルギー研究所 Semiconductor device design method
JP5763474B2 (en) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 Optical sensor
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130099074A (en) 2010-09-03 2013-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target and method for manufacturing semiconductor device
KR20180015760A (en) 2010-09-03 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
JP2012256819A (en) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8922236B2 (en) * 2010-09-10 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
KR101824125B1 (en) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
JP2012256821A (en) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd Memory device
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
JP5827520B2 (en) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 Semiconductor memory device
KR101952235B1 (en) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
KR101932576B1 (en) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101872926B1 (en) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
TWI543166B (en) 2010-09-13 2016-07-21 半導體能源研究所股份有限公司 Semiconductor device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
JP5815337B2 (en) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 semiconductor device
TWI670711B (en) 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 Memory device and semiconductor device
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101426515B1 (en) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device
JP2012256012A (en) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd Display device
WO2012035975A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
KR101856722B1 (en) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power-insulated-gate field-effect transistor
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (en) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 Semiconductor memory device and method for driving the same
TWI539456B (en) 2010-10-05 2016-06-21 半導體能源研究所股份有限公司 Semiconductor memory device and driving method thereof
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI543158B (en) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 Semiconductor memory device and driving method thereof
JP5877992B2 (en) * 2010-10-25 2016-03-08 株式会社半導体エネルギー研究所 Display device
KR101952456B1 (en) 2010-10-29 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Storage device
JP5771505B2 (en) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 Receiver circuit
KR101924231B1 (en) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN103313993A (en) 2010-11-02 2013-09-18 宇部兴产株式会社 (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film by using said metal compound
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012060202A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI555205B (en) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR101973212B1 (en) 2010-11-05 2019-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
JP6010291B2 (en) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 Driving method of display device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI593115B (en) 2010-11-11 2017-07-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP5770068B2 (en) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 semiconductor device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) * 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI562379B (en) * 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103500712B (en) 2010-12-03 2016-05-25 株式会社半导体能源研究所 Semiconductor device
TWI632551B (en) 2010-12-03 2018-08-11 半導體能源研究所股份有限公司 Integrated circuit, method for driving the same, and semiconductor device
JP5908263B2 (en) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 DC-DC converter
JP5856827B2 (en) 2010-12-09 2016-02-10 株式会社半導体エネルギー研究所 Semiconductor device
TWI534905B (en) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 Display device and method for manufacturing the same
JP2012256020A (en) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method for the same
JP2012142562A (en) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd Semiconductor memory device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9911858B2 (en) 2010-12-28 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
JP5852874B2 (en) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 Semiconductor device
JP6030298B2 (en) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 Buffer storage device and signal processing circuit
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5993141B2 (en) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 Storage device
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012151453A (en) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method of the same
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5864054B2 (en) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 Semiconductor device
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI525614B (en) 2011-01-05 2016-03-11 半導體能源研究所股份有限公司 Storage element, storage device, and signal processing circuit
TWI535032B (en) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
TWI570809B (en) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP5982125B2 (en) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5977523B2 (en) 2011-01-12 2016-08-24 株式会社半導体エネルギー研究所 Method for manufacturing transistor
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5859839B2 (en) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 Storage element driving method and storage element
KR102026718B1 (en) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and detecting method
TWI572009B (en) 2011-01-14 2017-02-21 半導體能源研究所股份有限公司 Semiconductor memory device
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
JP5798933B2 (en) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 signal processing circuit
JP2011086962A (en) * 2011-01-26 2011-04-28 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
TWI657580B (en) 2011-01-26 2019-04-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI570920B (en) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI564890B (en) 2011-01-26 2017-01-01 半導體能源研究所股份有限公司 Memory device and semiconductor device
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI602303B (en) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
WO2012102183A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI525619B (en) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 Memory circuit
WO2012102181A1 (en) 2011-01-27 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
DE112012000601T5 (en) 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor device and semiconductor device
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR101899375B1 (en) 2011-01-28 2018-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
JP6000560B2 (en) 2011-02-02 2016-09-28 株式会社半導体エネルギー研究所 Semiconductor memory device
TWI520273B (en) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 Semiconductor memory device
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
TWI569041B (en) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 Display device
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
KR101899880B1 (en) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable lsi
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898527B2 (en) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 Semiconductor device
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP5827145B2 (en) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 Signal processing circuit
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
TWI602249B (en) 2011-03-11 2017-10-11 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
JP2012209543A (en) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd Semiconductor device
TWI521612B (en) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
JP5933300B2 (en) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 Semiconductor device
JP5933897B2 (en) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device
KR101900525B1 (en) 2011-03-18 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI565078B (en) 2011-03-25 2017-01-01 半導體能源研究所股份有限公司 Field-effect transistor, and memory and semiconductor circuit including the same
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8987728B2 (en) * 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI545652B (en) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP6053098B2 (en) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 Semiconductor device
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
JP5879165B2 (en) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI567735B (en) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 Memory circuit, memory unit, and signal processing circuit
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5982147B2 (en) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 Light emitting device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
JP2012256406A (en) 2011-04-08 2012-12-27 Semiconductor Energy Lab Co Ltd Memory device and semiconductor device using the same
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP5883699B2 (en) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 Programmable LSI
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
JP6045176B2 (en) 2011-04-15 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
JP5890234B2 (en) 2011-04-15 2016-03-22 株式会社半導体エネルギー研究所 Semiconductor device and driving method thereof
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6001900B2 (en) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 Signal processing circuit
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8878288B2 (en) * 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5295302B2 (en) * 2011-04-25 2013-09-18 富士フイルム株式会社 Metal alkoxide solution
CN105931967B (en) 2011-04-27 2019-05-03 株式会社半导体能源研究所 The manufacturing method of semiconductor device
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
KR101919056B1 (en) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor circuit
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI525615B (en) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 Semiconductor storage device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
KR101963457B1 (en) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI671911B (en) 2011-05-05 2019-09-11 日商半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101874144B1 (en) 2011-05-06 2018-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI568181B (en) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 Logic circuit and semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (en) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
TWI557711B (en) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 Method for driving display device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101921772B1 (en) 2011-05-13 2018-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
TWI536502B (en) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 Memory circuit and electronic device
KR101952570B1 (en) 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing the same
US9954110B2 (en) 2011-05-13 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
WO2012157533A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886128B2 (en) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101946360B1 (en) 2011-05-16 2019-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device
TWI570891B (en) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device
TWI571058B (en) 2011-05-18 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and method of driving semiconductor device
TWI552150B (en) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 Semiconductor storage device
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006975B2 (en) 2011-05-19 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
KR102081792B1 (en) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Arithmetic circuit and method of driving the same
KR101991735B1 (en) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor integrated circuit
KR102093909B1 (en) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Circuit and method of driving the same
JP5951351B2 (en) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 Adder and full adder
KR101922397B1 (en) 2011-05-20 2018-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5936908B2 (en) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 Parity bit output circuit and parity check circuit
JP5947099B2 (en) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 Semiconductor device
JP6013680B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
TWI559683B (en) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 Semiconductor integrated circuit
JP6091083B2 (en) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 Storage device
JP5886496B2 (en) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
JP5820335B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
TWI616873B (en) 2011-05-20 2018-03-01 半導體能源研究所股份有限公司 Memory device and signal processing circuit
JP5820336B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
JP5892852B2 (en) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 Programmable logic device
TWI614995B (en) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 Phase locked loop and semiconductor device using the same
TWI557739B (en) 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 Semiconductor integrated circuit
TWI570730B (en) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device
CN102789808B (en) 2011-05-20 2018-03-06 株式会社半导体能源研究所 Storage arrangement and the method for driving storage arrangement
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6082189B2 (en) 2011-05-20 2017-02-15 株式会社半導体エネルギー研究所 Storage device and signal processing circuit
JP6013682B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP6030334B2 (en) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 Storage device
KR101912971B1 (en) 2011-05-26 2018-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Divider circuit and semiconductor device using the same
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI534956B (en) 2011-05-27 2016-05-21 半導體能源研究所股份有限公司 Trimming circuit and method for driving trimming circuit
JP5912844B2 (en) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 Programmable logic device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
JP5717546B2 (en) 2011-06-01 2015-05-13 三菱電機株式会社 Thin film transistor substrate and manufacturing method thereof
KR20190095563A (en) 2011-06-08 2019-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target, method for manufacturing sputtering target, and method for forming thin film
JP5890251B2 (en) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 Communication method
JP2013016243A (en) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd Memory device
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6104522B2 (en) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 Semiconductor device
US9112036B2 (en) 2011-06-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP6005401B2 (en) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI557910B (en) * 2011-06-16 2016-11-11 半導體能源研究所股份有限公司 Semiconductor device and a method for manufacturing the same
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
KR20200031715A (en) 2011-06-17 2020-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
KR102014876B1 (en) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI565067B (en) 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013042117A (en) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013685B2 (en) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103688303B (en) 2011-07-22 2016-08-17 株式会社半导体能源研究所 Light-emitting device and driving method thereof
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006572B2 (en) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device
TWI575494B (en) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 Method for driving semiconductor device
JP6128775B2 (en) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
JP6116149B2 (en) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 Semiconductor device
TWI668839B (en) 2011-08-29 2019-08-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP6016532B2 (en) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6050054B2 (en) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (en) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 Power insulated gate field effect transistor
JP5832399B2 (en) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 Light emitting device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103022012B (en) 2011-09-21 2017-03-01 株式会社半导体能源研究所 Semiconductor storage
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102108572B1 (en) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP5740270B2 (en) 2011-09-27 2015-06-24 株式会社東芝 Thin film transistor, manufacturing method thereof, and display device
JP2013084333A (en) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd Shift register circuit
CN107068766A (en) 2011-09-29 2017-08-18 株式会社半导体能源研究所 Semiconductor device
KR101506303B1 (en) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2013047631A1 (en) 2011-09-29 2013-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI613822B (en) 2011-09-29 2018-02-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
JP5806905B2 (en) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
JP2013093565A (en) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2013093561A (en) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
JP6022880B2 (en) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6026839B2 (en) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
JP5912394B2 (en) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 Semiconductor device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
KR20140074384A (en) 2011-10-14 2014-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20130040706A (en) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
KR20130043063A (en) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI567985B (en) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR102067051B1 (en) 2011-10-24 2020-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6226518B2 (en) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
KR101976212B1 (en) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6082562B2 (en) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
WO2013061895A1 (en) 2011-10-28 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102012981B1 (en) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5933895B2 (en) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6076038B2 (en) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 Method for manufacturing display device
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP6122275B2 (en) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 Display device
CN103918025B (en) 2011-11-11 2016-12-21 株式会社半导体能源研究所 Signal-line driving circuit and liquid crystal indicator
US10026847B2 (en) 2011-11-18 2018-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6125211B2 (en) 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
JP6099368B2 (en) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 Storage device
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
TWI669760B (en) 2011-11-30 2019-08-21 日商半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
KR102072244B1 (en) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6147992B2 (en) 2011-11-30 2017-06-14 株式会社半導体エネルギー研究所 Semiconductor device
TWI639150B (en) 2011-11-30 2018-10-21 日商半導體能源研究所股份有限公司 Semiconductor display device
TWI621185B (en) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6050662B2 (en) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
KR20140101817A (en) 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2013137853A (en) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd Storage device and driving method thereof
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
JP6081171B2 (en) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 Storage device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2013089115A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6105266B2 (en) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 Storage device
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013149953A (en) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013130802A (en) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device, image display device, storage device, and electronic apparatus
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP6012450B2 (en) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 Driving method of semiconductor device
TWI580189B (en) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 Level-shift circuit and semiconductor integrated circuit
JP6033071B2 (en) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 Semiconductor device
TWI580047B (en) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 Semiconductor device
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6053490B2 (en) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI569446B (en) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (en) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI584383B (en) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR102103913B1 (en) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
SG11201504940RA (en) 2012-01-23 2015-07-30 Semiconductor Energy Lab Semiconductor device
KR102034911B1 (en) 2012-01-25 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
TWI581431B (en) 2012-01-26 2017-05-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP6091905B2 (en) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI604609B (en) 2012-02-02 2017-11-01 半導體能源研究所股份有限公司 Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102101167B1 (en) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP5981157B2 (en) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 Semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP6125850B2 (en) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (en) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd Storage element and semiconductor element
JP6220526B2 (en) 2012-02-29 2017-10-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6151530B2 (en) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 Image sensor, camera, and surveillance system
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013183001A (en) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6046514B2 (en) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
JP6100559B2 (en) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 Semiconductor memory device
JP6041707B2 (en) 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 Latch circuit and semiconductor device
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013133143A1 (en) 2012-03-09 2013-09-12 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
KR102108248B1 (en) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, transistor, and semiconductor device
JP6168795B2 (en) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
JP6169376B2 (en) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 Battery Management Unit, Protection Circuit, Power Storage Device
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6139187B2 (en) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 Semiconductor device
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP2013229013A (en) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd Array controller and storage system
WO2013146154A1 (en) 2012-03-29 2013-10-03 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
JP5975907B2 (en) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6059566B2 (en) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
SG10201610711UA (en) 2012-04-13 2017-02-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6128906B2 (en) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
JP6143423B2 (en) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP6076612B2 (en) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6001308B2 (en) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 Semiconductor device
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6199583B2 (en) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 Semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6228381B2 (en) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6100071B2 (en) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
US8860023B2 (en) 2012-05-01 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013250965A (en) 2012-05-02 2013-12-12 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method thereof
KR102025722B1 (en) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Temperature sensor circuit and semiconductor device including temperature sensor circuit
JP6100076B2 (en) 2012-05-02 2017-03-22 株式会社半導体エネルギー研究所 Processor
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6243136B2 (en) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 Switching converter
CN106298772A (en) 2012-05-02 2017-01-04 株式会社半导体能源研究所 Pld
JP6227890B2 (en) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 Signal processing circuit and control circuit
KR20130125717A (en) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR20150020293A (en) 2012-05-10 2015-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2013168624A1 (en) 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102069158B1 (en) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
KR102087443B1 (en) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
DE102013022449B3 (en) 2012-05-11 2019-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
JP5931583B2 (en) * 2012-05-18 2016-06-08 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5674707B2 (en) 2012-05-22 2015-02-25 株式会社東芝 Display device
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP6250955B2 (en) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP6050721B2 (en) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
KR20130132271A (en) 2012-05-25 2013-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving memory element
JP2014003594A (en) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device and method of driving the same
WO2013176199A1 (en) 2012-05-25 2013-11-28 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (en) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 Programmable logic device
JP6158588B2 (en) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 Light emitting device
KR102119914B1 (en) 2012-05-31 2020-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR102071545B1 (en) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6208469B2 (en) 2012-05-31 2017-10-04 株式会社半導体エネルギー研究所 Semiconductor device
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
KR20150023547A (en) 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and alarm device
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102113160B1 (en) 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
KR102082794B1 (en) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of driving display device, and display device
CN104380444A (en) 2012-06-29 2015-02-25 株式会社半导体能源研究所 Semiconductor device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR20140002496A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI596778B (en) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102099262B1 (en) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
JP2014032399A (en) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP6006558B2 (en) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP6185311B2 (en) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 Power supply control circuit and signal processing circuit
CN104488016B (en) 2012-07-20 2018-08-10 株式会社半导体能源研究所 Display device and electronic equipment with the display device
KR20200018725A (en) 2012-07-20 2020-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
DE112013003606T5 (en) 2012-07-20 2015-04-16 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2014042004A (en) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
KR20140013931A (en) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
JP6224931B2 (en) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP6134598B2 (en) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 Semiconductor device
JP2014045175A (en) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd Semiconductor device
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
DE112013007566B3 (en) 2012-08-03 2018-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
JP6220597B2 (en) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140020749A (en) 2012-08-10 2014-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI581404B (en) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102099261B1 (en) 2012-08-10 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2014057296A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014025002A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP2014057298A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
JP2014199899A (en) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 Semiconductor device
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (en) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Radiation detection panel, radiation imaging device, and diagnostic imaging device
KR20140029181A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
KR20140029202A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
DE102013216824A1 (en) 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611511B (en) 2012-08-31 2018-01-11 半導體能源研究所股份有限公司 Semiconductor device
SG11201504939RA (en) 2012-09-03 2015-07-30 Semiconductor Energy Lab Microcontroller
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE102013217278B4 (en) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. A photodetector circuit, an imaging device, and a method of driving a photodetector circuit
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
CN104620390A (en) 2012-09-13 2015-05-13 株式会社半导体能源研究所 Semiconductor device
TWI644437B (en) 2012-09-14 2018-12-11 半導體能源研究所股份有限公司 Semiconductor device and method for fabricating the same
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TW202005098A (en) 2012-09-24 2020-01-16 日商半導體能源研究所股份有限公司 Semiconductor device
JP5779161B2 (en) 2012-09-26 2015-09-16 株式会社東芝 Thin film transistor and display device
WO2014054569A1 (en) 2012-10-03 2014-04-10 シャープ株式会社 Semiconductor device and display device
JP6290576B2 (en) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 Liquid crystal display device and driving method thereof
KR20140047529A (en) 2012-10-12 2014-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
JP6351947B2 (en) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
TWI681233B (en) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 Liquid crystal display device, touch panel and method for manufacturing liquid crystal display device
KR20150070167A (en) 2012-10-17 2015-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Microcontroller and method for manufacturing the same
WO2014061535A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014082388A (en) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd Semiconductor device
WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6283191B2 (en) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6059501B2 (en) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI591966B (en) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 Programmable logic device and method for driving programmable logic device
JP6021586B2 (en) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device
JP5951442B2 (en) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 Semiconductor device
JP6284710B2 (en) * 2012-10-18 2018-02-28 出光興産株式会社 Sputtering target, oxide semiconductor thin film, and manufacturing method thereof
KR20140050542A (en) 2012-10-19 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
JP6204145B2 (en) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 Semiconductor device
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI637517B (en) 2012-10-24 2018-10-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR20140052870A (en) 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2014065301A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (en) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 Display device and electronic device
WO2014073374A1 (en) 2012-11-06 2014-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102006585B1 (en) 2012-11-08 2019-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Metal oxide film and method for forming metal oxide film
TWI605593B (en) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device
TWI608616B (en) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 Semiconductor device
JP6220641B2 (en) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6317059B2 (en) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device and display device
TWI613813B (en) 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 Semiconductor device
JP6285150B2 (en) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 Semiconductor device
TWI620323B (en) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
TW201941421A (en) 2012-11-28 2019-10-16 日商半導體能源研究所股份有限公司 Display device
TWI627483B (en) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 Display device and television receiver
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
JP2014130336A (en) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd Display device
TWI624949B (en) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 Semiconductor device
WO2014084152A1 (en) 2012-11-30 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20140071234A (en) 2012-12-03 2014-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2014135478A (en) 2012-12-03 2014-07-24 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
KR102112364B1 (en) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (en) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 Programmable logic device and semiconductor device
DE112013006219T5 (en) 2012-12-25 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
KR20150099858A (en) 2012-12-25 2015-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
KR20140082934A (en) 2012-12-25 2014-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Resistor, display device, and electronic device
JP2014142986A (en) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device
CN110137181A (en) 2012-12-28 2019-08-16 株式会社半导体能源研究所 The manufacturing method of semiconductor device and semiconductor device
TWI607510B (en) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method of the same
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (en) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
KR20150099783A (en) 2012-12-28 2015-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6329762B2 (en) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (en) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
JP5807076B2 (en) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
JP6223198B2 (en) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
TWI619010B (en) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 Semiconductor device
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI593025B (en) 2013-01-30 2017-07-21 半導體能源研究所股份有限公司 Method for processing oxide semiconductor layer
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
TWI618252B (en) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device
KR102112367B1 (en) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
WO2014125979A1 (en) 2013-02-13 2014-08-21 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (en) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 Display device and electronic device
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611567B (en) 2013-02-27 2018-01-11 半導體能源研究所股份有限公司 Semiconductor device, driver circuit, and display device
TWI612321B (en) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 Imaging device
JP6141777B2 (en) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20140108120A (en) 2013-02-28 2014-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2014195241A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2014195243A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
US9647152B2 (en) 2013-03-01 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Sensor circuit and semiconductor device including sensor circuit
JP6250883B2 (en) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 Semiconductor device
KR20140109817A (en) 2013-03-06 2014-09-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor film and semiconductor device
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (en) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 Semiconductor device
JP6283237B2 (en) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
JP2014199709A (en) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 Memory device and semiconductor device
WO2014142332A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6298662B2 (en) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
KR20150128820A (en) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving semiconductor device and semiconductor device
KR20140113354A (en) 2013-03-14 2014-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI677193B (en) 2013-03-15 2019-11-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
JP6355374B2 (en) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6093726B2 (en) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6272713B2 (en) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 Programmable logic device and semiconductor device
JP6376788B2 (en) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP6316630B2 (en) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device
US9608122B2 (en) 2013-03-27 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014209209A (en) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 Display device
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (en) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6198434B2 (en) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 Display device and electronic device
JP6224338B2 (en) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device, display device, and method for manufacturing semiconductor device
JP6280794B2 (en) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 Semiconductor device and driving method thereof
TWI620324B (en) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6333028B2 (en) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 Memory device and semiconductor device
JP6456598B2 (en) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 Display device
WO2014175296A1 (en) 2013-04-24 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6396671B2 (en) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6401483B2 (en) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI644434B (en) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI631711B (en) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 Semiconductor device
KR20140131264A (en) 2013-05-02 2014-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014181785A1 (en) 2013-05-09 2014-11-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
TWI621337B (en) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 Signal processing device
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI618058B (en) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device
TWI679772B (en) 2013-05-16 2019-12-11 日商半導體能源研究所股份有限公司 Semiconductor device
TWI627751B (en) 2013-05-16 2018-06-21 半導體能源研究所股份有限公司 Semiconductor device
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
JP6298353B2 (en) 2013-05-17 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI664731B (en) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 Semiconductor device
KR20160012156A (en) 2013-05-20 2016-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102098795B1 (en) 2013-05-20 2020-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
DE102014208859A1 (en) 2013-05-20 2014-11-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10416504B2 (en) 2013-05-21 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20160009626A (en) 2013-05-21 2016-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and formation method thereof
TWI624936B (en) 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 Display device
JP2015195327A (en) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 semiconductor device
TWI649606B (en) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 Display device and the electronic device
US9806198B2 (en) 2013-06-05 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6475424B2 (en) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 Semiconductor device
JP6400336B2 (en) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 Semiconductor device
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20140145547A (en) 2013-06-13 2014-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6368155B2 (en) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 Programmable logic device
TWI652822B (en) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 The method for forming the oxide semiconductor film and
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI633650B (en) 2013-06-21 2018-08-21 半導體能源研究所股份有限公司 Semiconductor device
US9515094B2 (en) 2013-06-26 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
JP2015012048A (en) 2013-06-27 2015-01-19 三菱電機株式会社 Active matrix substrate and method for manufacturing the same
JP6352070B2 (en) 2013-07-05 2018-07-04 株式会社半導体エネルギー研究所 Semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
JP6435124B2 (en) 2013-07-08 2018-12-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9424950B2 (en) 2013-07-10 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6400961B2 (en) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 Display device
JP6322503B2 (en) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 Semiconductor device
JP6516978B2 (en) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 Semiconductor device
US9443592B2 (en) 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
TWI608523B (en) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
TWI636309B (en) 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 Liquid crystal display device and electronic device
TWI632688B (en) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
TWI641208B (en) 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 Dcdc converter
JP6410496B2 (en) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 Multi-gate transistor
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6460592B2 (en) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 DC-DC converter and semiconductor device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
TWI635750B (en) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 Imaging device and operation method thereof
JP2015053477A (en) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 Semiconductor device and method for manufacturing the same
JP6345023B2 (en) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US9299855B2 (en) 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6329843B2 (en) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
TWI663820B (en) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 Charge pump circuit and semiconductor device including the same
KR20150022671A (en) 2013-08-22 2015-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150022676A (en) 2013-08-23 2015-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Capacitor and semiconductor device
JP2015065424A (en) * 2013-08-27 2015-04-09 株式会社半導体エネルギー研究所 Oxide film formation method and semiconductor device manufacturing method
TWI667520B (en) 2013-08-28 2019-08-01 日商半導體能源研究所股份有限公司 Display device
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6426402B2 (en) 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 Display device
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
JP6406926B2 (en) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 Semiconductor device
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (en) 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150028721A (en) 2013-09-06 2015-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6401977B2 (en) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 Semiconductor device
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
TWI640014B (en) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 Memory device, semiconductor device, and electronic device
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI646690B (en) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method
US9716003B2 (en) 2013-09-13 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
CN110806663A (en) 2013-09-13 2020-02-18 株式会社半导体能源研究所 Display device
JP6429540B2 (en) 2013-09-13 2018-11-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
US9887297B2 (en) 2013-09-17 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US9859439B2 (en) 2013-09-18 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2015060996A (en) 2013-09-19 2015-03-30 株式会社東芝 Display device and semiconductor device
TWI677989B (en) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9397153B2 (en) 2013-09-23 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015084418A (en) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 Semiconductor device
JP6570817B2 (en) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 Semiconductor device
JP6190228B2 (en) 2013-09-24 2017-08-30 株式会社東芝 Semiconductor device and imaging device
JP2015065202A (en) 2013-09-24 2015-04-09 株式会社東芝 Semiconductor element, display device, method of manufacturing semiconductor element, and method of manufacturing display device
JP6383616B2 (en) 2013-09-25 2018-08-29 株式会社半導体エネルギー研究所 Semiconductor device
US9799774B2 (en) 2013-09-26 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Switch circuit, semiconductor device, and system
JP6392603B2 (en) 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 Semiconductor device
JP6581765B2 (en) 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 Bootstrap circuit and semiconductor device having bootstrap circuit
JP6386323B2 (en) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 Semiconductor device
TWI688102B (en) 2013-10-10 2020-03-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9293592B2 (en) 2013-10-11 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6591739B2 (en) 2013-10-16 2019-10-16 株式会社半導体エネルギー研究所 Driving method of arithmetic processing unit
TWI621127B (en) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 Arithmetic processing unit and driving method thereof
TWI642170B (en) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 Display device and electronic device
CN110571278A (en) 2013-10-22 2019-12-13 株式会社半导体能源研究所 Semiconductor device with a plurality of semiconductor chips
WO2015060203A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20160072110A (en) 2013-10-22 2016-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2015109424A (en) 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 Semiconductor device, method for manufacturing semiconductor device and etchant used for semiconductor device
DE102014220672A1 (en) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015179247A (en) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 display device
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
JP6625796B2 (en) 2013-10-25 2019-12-25 株式会社半導体エネルギー研究所 Display device
JP6457239B2 (en) 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 Semiconductor device
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6440457B2 (en) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 Semiconductor device
JP6478562B2 (en) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 Semiconductor device
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP2015118724A (en) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 Semiconductor device and method for driving the semiconductor device
JP6426437B2 (en) 2013-11-22 2018-11-21 株式会社半導体エネルギー研究所 Semiconductor device
JP6393590B2 (en) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 Semiconductor device
JP6486660B2 (en) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 Display device
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016001712A (en) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
WO2015083034A1 (en) 2013-12-02 2015-06-11 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2015083029A1 (en) 2013-12-02 2015-06-11 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP6496132B2 (en) 2013-12-02 2019-04-03 株式会社半導体エネルギー研究所 Semiconductor device
US9991392B2 (en) 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6238712B2 (en) 2013-12-05 2017-11-29 三菱電機株式会社 Thin film transistor substrate and manufacturing method thereof
JP2016027597A (en) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 Semiconductor device
JP6315966B2 (en) 2013-12-11 2018-04-25 三菱電機株式会社 Active matrix substrate and manufacturing method thereof
US9627413B2 (en) 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI642186B (en) 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 Semiconductor device
TW201933615A (en) 2013-12-19 2019-08-16 日商半導體能源研究所股份有限公司 Semiconductor device
JP6444714B2 (en) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097586A1 (en) 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6402017B2 (en) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 Semiconductor device
KR20190140092A (en) 2013-12-26 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI637484B (en) 2013-12-26 2018-10-01 日商半導體能源研究所股份有限公司 Semiconductor device
JP6506961B2 (en) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 Liquid crystal display
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2015097593A1 (en) 2013-12-27 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6506545B2 (en) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 Semiconductor device
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20160103017A (en) 2013-12-27 2016-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device
JP6488124B2 (en) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 Semiconductor device
JP6444723B2 (en) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 apparatus
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor