JP4164562B2 - Transparent thin film field effect transistor using homologous film as an active layer - Google Patents

Transparent thin film field effect transistor using homologous film as an active layer

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JP4164562B2
JP4164562B2 JP2002266012A JP2002266012A JP4164562B2 JP 4164562 B2 JP4164562 B2 JP 4164562B2 JP 2002266012 A JP2002266012 A JP 2002266012A JP 2002266012 A JP2002266012 A JP 2002266012A JP 4164562 B2 JP4164562 B2 JP 4164562B2
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JP2004103957A (en )
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裕道 太田
正浩 平野
利夫 神谷
秀雄 細野
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Hoya株式会社
独立行政法人科学技術振興機構
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Description

【0001】 [0001]
【発明の属する技術分野】 BACKGROUND OF THE INVENTION
本発明は、可視光に対して透明で、透明電子回路を構成する素子として用いることができる、ZnOを主たる構成成分として含有するホモロガス化合物の単結晶膜又はアモルファス膜を活性層として用いる透明電界効果型トランジスタに関する。 The present invention is transparent to visible light, it can be used as an element constituting the transparent electronics, transparent field effect using a single crystal film or an amorphous film of homologous compound containing ZnO as a main component as an active layer about a type transistor.
【0002】 [0002]
【従来の技術及びその課題】 BACKGROUND OF THE INVENTION
電界効果型トランジスタは、半導体メモリ集積回路の単位電子素子、高周波信号増幅素子、液晶駆動用素子等として用いられており、現在、最も多く実用化されている電子デバイスである。 Field effect transistor, the unit electronic device of a semiconductor memory integrated circuit, is used as a liquid crystal driving element or the like, currently the most practically used in which the electronic device. 材料としては、シリコン半導体化合物が最も広く使われている。 The material, a silicon semiconductor compound is most widely used. 高速動作が必要な高周波増幅素子、集積回路用素子等には、シリコン単結晶が用いられ、また、低速動作で充分な液晶駆動用には、大面積化の要求から、アモルファスシリコンが使われている。 High-speed operation required high-frequency amplifying device, the integrated circuit element or the like, a silicon single crystal is used, also the use sufficient liquid crystal driving at a low speed operation, the demand for a larger area, and amorphous silicon is used there.
【0003】 [0003]
シリコンを用いた電界効果型トランジスタは、多くの用途に対して、充分な性能を有している。 Field-effect transistor using silicon, for many applications, has a sufficient performance. しかし、該トランジスタは、シリコンの光学的特性に基づいて、可視光に対して不透明で、透明回路を構成することができない。 However, the transistor is based on the optical properties of silicon, is opaque to visible light, it is impossible to constitute a transparent circuit. また、可視光照射により、伝導キャリアを生じるために、高光照射下ではトランジスタ特性が劣化してしまう。 Further, the visible light irradiation, to produce a conductive carrier, under high illumination transistor characteristics are deteriorated. 例えば、該トランジスタを液晶ディスプレイの液晶駆動用スイッチング素子として応用した場合、該デバイスは、可視光に対して不透明なため、ディスプレイ画素の開口比が小さくなる。 For example, when applied to the transistor as a liquid crystal driving switching element of a liquid crystal display, the device for opaque to visible light, the aperture ratio of the display pixel is decreased. また、バックライト照射により光誘起電流が発生し、スイッチング特性が劣化してしまう。 Further, the light-induced current is generated by a backlight irradiation, the switching characteristics are deteriorated. こうした劣化を防ぐため、バックライト光をカットするための遮光膜を設ける必要がある。 To prevent such deterioration, it is necessary to provide a light shielding film for cutting off the backlight light.
【0004】 [0004]
シリコン電界効果型トランジスタのこうした問題点は、シリコンに替わって、エネルギーバンド幅の大きな半導体材料を用いることにより、原理的に、解決することができる。 These problems of the silicon field effect transistors, in place of the silicon, by using a large semiconductor material of an energy band width, it is possible in principle, solve. 実際に、透明酸化物半導体であるZnOを用いて、電界効果型トランジスタを作製する試みがなされている(例えば、非特許文献1)。 Indeed, by using a ZnO transparent oxide semiconductor, an attempt to produce a field effect transistor have been made (for example, Non-Patent Document 1). しかし、ZnOは、電気伝導度を小さくすることが難しく、ノーマリーオフの電界効果型トランジスタを構成できない等の欠点がある。 However, ZnO, it is difficult to reduce the electric conductivity, there is a drawback such that can not configure the field effect transistors of normally off. また、アモルファス状態を作り難いので、大面積に適したアモルファストランジスタを作製することができない。 Moreover, since hardly make amorphous state, it is impossible to produce an amorphous transistor suitable for large area.
【0005】 [0005]
【非特許文献1】 Non-Patent Document 1]
七種ら、応用物理学会2000年春季学術講演会予稿集,2000.3,29p-YL-16 Seven species, et al., Applied Physics Society, 2000 Spring Academic Lecture Proceedings, 2000.3,29p-YL-16
【0006】 [0006]
【課題を解決するための手段】 In order to solve the problems]
本発明者らは、先に、パルスレーザー薄膜堆積法を用い、室温での成膜により、アモルファス状態で、n-型電気伝導を示す、ZnOを主たる構成成分として含有するInGaO 3 (ZnO) m (mは自然数) 等のホモロガス化合物透明薄膜を育成した(特開2000-44236号公報、細野他 Philosophical Magazine B.81.501-515(2001))。 The present inventors have previously using a pulsed laser thin-film deposition, the film formation at room temperature, in an amorphous state, indicates the n- type electric conductivity, InGaO 3 containing ZnO as a main component (ZnO) m (m is a natural number) were grown homologous compound transparent thin film such as (JP 2000-44236 and JP Hosono other Philosophical Magazine B.81.501-515 (2001)).
【0007】 [0007]
さらに、本発明者らは、YSZ(イットリア安定化ジルコニア)基板上に育成したZnO単結晶極薄膜上に、アモルファスのホモロガス薄膜を堆積し、得られた多層膜を高温で加熱拡散処理する「反応性固相エピタキシャル法」により、ホモロガス単結晶薄膜を育成する方法を開発し、「自然超格子ホモロガス単結晶薄膜とその製造方法」と名付け、特許出願した(特願2001-340066)。 Furthermore, the present inventors have, YSZ (the yttria-stabilized zirconia) ZnO was grown on the substrate single crystal electrode thin film, depositing a homologous amorphous thin film, heat diffusion treatment and the resulting multi-layer film at a high temperature "reaction the sexual phase epitaxial method ", developed a method of growing a homologous single-crystal thin film, called" natural superlattice homologous single-crystal thin film and a manufacturing method thereof ", filed a patent application (Japanese Patent application No. 2001-340066).
【0008】 [0008]
本発明者は、上記のホモロガス単結晶薄膜の製造方法と同様に、ZnO薄膜上にエピタキシャル成長した複合酸化物薄膜を加熱拡散する手段を用いることにより従来のシリコンを用いた電界効果型トランジスタに代わる新たな優れた電界効果型トランジスタを提供できることを見出した。 The present inventors, as well as the manufacturing method of the homologous single-crystal thin film, a new alternative to the field effect transistor using a conventional silicon by using a means for heating diffuse composite oxide thin film was epitaxially grown on the ZnO thin film It found to be able to offer a Do excellent field-effect transistor.
【0009】 [0009]
本発明は、反応性固相エピタキシャル法により育成した、ZnOを主たる構成成分として含有するホモロガス化合物単結晶薄膜又はZnOを主たる構成成分として含有するホモロガスアモルファス薄膜を活性層とした電界効果型トランジスタを提供する。 The present invention was grown by reactive solid phase epitaxial method, provides a field-effect transistor of the e Moro gas amorphous thin film containing the active layer of the homologous compound single crystal thin film or ZnO containing ZnO as a main component as a main component to.
【0010】 [0010]
すなわち、本発明は、(1)ホモロガス化合物InMO 3 (ZnO) m (M=In, Fe, Ga ,又はAl, m=1以上50未満の整数)薄膜を活性層として用いることを特徴とする透明薄膜電界効果型トランジスタである。 The present invention provides: (1) homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 to 50 below integer) transparent which comprises using a thin film as an active layer it is a thin film field effect transistor. また、(2)表面が原子レベルで平坦である単結晶又はアモルファスホモロガス化合物薄膜を用いることを特徴とする上記(1)の透明薄膜電界効果型トランジスタである。 It is also (2) a transparent thin film field effect transistor of the surface is characterized by using a single crystal or amorphous e Moro gas compound thin film is flat at the atomic level above (1). また、(3)ホモロガス化合物が耐熱性、透明酸化物単結晶基板上に形成された単結晶薄膜であることを特徴とする上記(1)の透明薄膜電界効果型トランジスタである。 Further, a (3) homologous compound is heat-resistant, transparent oxide transparent thin film field effect transistor of the (1), which is a single crystal thin film formed on a single crystal substrate. また、(4)ホモロガス化合物がガラス基板上に形成されたアモルファス薄膜であることを特徴とする上記(1)の透明薄膜電界効果型トランジスタである。 Further, a (4) a transparent thin film field effect transistor of the (1), wherein the homologous compound is an amorphous thin film formed on a glass substrate.
【0011】 [0011]
1. 反応性固相エピタキシャル法により製造したホモロガス化合物単結晶InMO 3 (ZnO) m (M=In, Fe, Ga, Al, m=1以上50未満の整数)薄膜は、InO 1.5層が原子レベルで平坦な薄膜表面を形成することから、ゲートと活性層の界面に欠陥が介在しにくく、ゲートリーク電流の少ない薄膜電界効果型トランジスタを作製できる。 1. homologous compound was prepared by reactive solid phase epitaxial method single crystal InMO 3 (ZnO) m (M = In, Fe, Ga, Al, m = 1 or more 50 than an integer) films, InO 1.5 layers atomic level in the fact that to form a flat thin film surface, defects at the interface is unlikely to intervention of the gate and the active layer can be made less thin film field effect transistor gate leakage current. InMO 3 (ZnO) mのmの値は1以上50未満の整数が好ましい。 The value of m in InMO 3 (ZnO) m is an integer less than 50 preferably 1 or more. 原理的には、mの値は、無限大まで可能であるが、実用上、mの値が大きくなりすぎると、膜内でのmのばらつきが大きくなることと、酸素欠陥が生じやすくなり、その結果、膜の電気伝導度が大きくなり、ノーマリオフ型のFETが作り難くなる。 In principle, the value of m is susceptible to infinity, practically, the value of m is too large, and the variation of m in the film becomes large, it oxygen defects easily occur, As a result, increases the electrical conductivity of the film, normally-off type FET is less likely to make.
【0012】 [0012]
2. ZnOを主たる構成成分として含有するホモロガス化合物InMO 3 (ZnO) m (M=In, Fe, Ga,又はAl,m=1以上50未満の整数)のバンドギャップエネルギーは、3.3eVより大きので、波長が400nm以上の可視光に対して透明である。 2. bandgap energy of the homologous compound InMO 3 containing ZnO as a main component (ZnO) m (M = In , Fe, Ga, or Al, m = 1 or more 50 than an integer) is than greater than 3.3eV wavelength is transparent to visible light of greater than or equal 400 nm. したがって、ホモロガス化合物単結晶InMO 3 (ZnO) m (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)薄膜を活性層として用いることにより、可視光透過率が高く、可視光による光誘起電流の発生がない、薄膜電界効果型トランジスタを作製できる。 Therefore, homologous compound single crystal InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) by using a thin film as an active layer, a high visible light transmittance, the visible no generation of photo-induced current caused by light, can be a thin film field effect transistor.
【0013】 [0013]
3. さらに、反応性固相エピタキシャル法により製造したホモロガス化合物InMO 3 (ZnO) m (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)単結晶薄膜は化学量論組成からのずれが極めて小さく、室温付近では良質な絶縁体であることから、ホモロガス化合物単結晶InMO 3 (ZnO) m (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)薄膜を活性層として用いることにより、ノーマリーオフ作動で、スイッチング特性の良い透明薄膜電界効果型トランジスタを作製できる。 3. In addition, homologous compound InMO 3 prepared by reactive solid phase epitaxial method (ZnO) m (M = In , Fe, Ga, or Al, m = 1 or more 50 than an integer) single-crystal thin film stoichiometry deviation from very small, because it is good insulator in the vicinity of room temperature, homologous compound single crystal InMO 3 (ZnO) m (M = in, Fe, Ga, or Al, m = 1 or more 50 than an integer) by using the thin film as an active layer, a normally-off operation can be made good transparent thin film field effect transistor of the switching characteristics.
【0014】 [0014]
ZnOを含むホモロガス化合物を反応性固相エピタキシャル法により室温で成膜したアモルファス状態は、1000℃程度の高温まで安定であり、その状態での電子キャリア移動度は、アモルファスシリコンに比較して、10倍以上大きい。 Amorphous state was formed at room temperature homologous compound containing ZnO by reactive solid phase epitaxial method is stable up to a high temperature of about 1000 ° C., the electron carrier mobility in this state, compared to the amorphous silicon, 10 more than double large. したがって、ホモロガスアモルファス薄膜を活性層として用いた電界効果型トランジスタは、シリコンアモルファス電界効果型トランジスタに比較して、可視光透過率が高く、光照射に対して安定に動作し、さらに、高速動作することが期待できる。 Accordingly, the field-effect transistor using e Moro gas amorphous thin as the active layer, as compared to the silicon amorphous field effect transistor, high visible light transmittance, stably operates to light irradiation, further high-speed operation it can be expected.
【0015】 [0015]
【発明の実施の形態】 DETAILED DESCRIPTION OF THE INVENTION
本発明で用いるZnOを主たる構成成分として含有するホモロガス化合物単結晶薄膜の基板には、耐熱性があり、透明な酸化物単結晶基板、例えば、YSZ(イットリア安定化ジルコニア)、サファイア、MgO、ZnO等を用いる。 The substrate of the homologous compound single crystal thin film containing ZnO is used in the present invention as a main component, there is heat resistance, a transparent oxide single-crystal substrate, for example, YSZ (yttria-stabilized zirconia), sapphire, MgO, ZnO use and the like. 中でも、ZnOを含むホモロガス化合物と格子定数が近く、該化合物と1400℃以下の温度では、化学反応しないYSZが、最も好ましい。 Of these, nearly homologous compound lattice constant containing ZnO, in the compound and 1400 ° C. temperature below do not chemically react YSZ is most preferred. これらの基板の表面平均二乗粗さRmsは、1.0nm以下のものを用いることが好ましい。 Surface mean square roughness Rms of the substrate, it is preferable to use the following: 1.0 nm. Rmsは原子間力顕微鏡で、例えば、1μm角を走査することによって算出できる。 Rms is an atomic force microscope, for example, can be calculated by scanning the 1μm square.
【0016】 [0016]
ZnOを含むホモロガス化合物アモルファス薄膜を用いる場合には、基板は耐熱性を有する必要がなく、安価なガラス基板を用いることができる。 When using a homologous compound amorphous thin film containing ZnO, the substrate need not have a heat resistance, it is possible to use an inexpensive glass substrate. 平坦度も、アモルファスシリコン電界効果型トランジスタ用に用いられるガラス基板程度で良い。 Flatness also be a glass about substrate used for an amorphous silicon field effect transistor.
【0017】 [0017]
YSZ等の酸化物単結晶基板を、大気中もしくは真空中で1000℃以上に加熱することによって超平坦化した表面が得られる。 The oxide single crystal substrates of YSZ or the like, ultra-planarized surface can be obtained by heating above 1000 ° C. in air or in a vacuum. 超平坦化した酸化物単結晶基板の表面には結晶構造を反映した構造が現れる。 Structure reflecting the crystal structure appear on the surface of the oxide single crystal substrate having a super flat. すなわち、数100nm程度の幅を持つテラスとサブnm程度の高さを持つステップからなる構造で、一般に原子状に平坦化された構造と呼ばれる。 That is, in the structure comprising the step of having a terrace and height of about sub nm with a width of about several 100 nm, commonly referred to as flattened structure to atomic.
【0018】 [0018]
テラス部分は平面上に配列した原子からなり、若干存在する欠陥の存在を無視すれば、完全に平坦化された表面である。 Terrace portion consists atoms arranged in a plane, ignoring the presence of defects present little is fully planarized surface. ステップの存在により、基板全体で完全平坦化された表面とはならない。 The presence of steps, not a fully planarized surface across the substrate. この構造を平均二乗粗さ測定方法による粗さRmsで表現すれば、Rmsは1.0nm以下のものである。 Expressed this structure roughness Rms by the mean square roughness measuring method, Rms are: 1.0 nm. Rmsは、例えば、原子間力顕微鏡で、例えば、1μm角の範囲を走査することによって算出した値である。 Rms, for example, an atomic force microscope, for example, a value calculated by scanning the range of 1μm square.
【0019】 [0019]
得られた原子平坦面を持つ耐熱性透明酸化物基板上に、MBE法、パルスレーザー蒸着法(PLD法)等により、原子平坦面を有するZnO単結晶薄膜をエピタキシャル成長させる。 To the resulting heat-resistant transparent oxide substrate having atomic flat surfaces, MBE method, a pulsed laser deposition method (PLD method), it is epitaxially grown ZnO single crystal thin film having an atomic flat surface. 次に、該ZnO薄膜上に、InMO 3 (ZnO) m (M=In, Fe, Ga, Al, m=1以上50未満の整数)と記述されるホモロガス化合物薄膜を、ターゲットとして、該酸化物の多結晶焼結体を使用して、MBE法、パルスレーザー蒸着法(PLD法)等により成長させる。 Then, on the ZnO thin film, InMO 3 (ZnO) m ( M = In, Fe, Ga, Al, m = 1 or more than 50 integer) a homologous compound thin film to be described as, as a target, the oxide use of the polycrystalline sintered body, MBE process, a pulsed laser deposition method is grown by (PLD method).
【0020】 [0020]
得られた薄膜は、単結晶膜である必要はなく、多結晶膜でも、アモルファス膜でも良い。 The resulting film does not have to be a single crystal film, in a polycrystalline film, or an amorphous film. 最後に、薄膜全体をカバーできるように高融点化合物,例えばYSZやAl 2 O 3を被せ、1300℃以上の高温で、ZnO蒸気を含む大気圧中で加熱拡散処理を行なう。 Finally, the high melting point compounds as can cover the entire thin film, for example, covered with a YSZ or Al 2 O 3, at a high temperature of above 1300 ° C., subjected to a heat diffusion treatment at atmospheric pressure containing ZnO vapor. 高融点化合物を被せる理由は,後述のZnO蒸気と該薄膜表面との接触を避けるためである。 Reason for covering a high melting point compound is to avoid contact with the ZnO vapor and thin film surface will be described later.
【0021】 [0021]
ZnOは蒸気圧が高いので、大気中にZnO蒸気を加えないと、加熱拡散処理中に、膜からZnOが蒸発し、加熱拡散処理後の膜組成が大幅に変化してしまい、良質な結晶膜が得られない。 Because ZnO has a high vapor pressure and without the addition of ZnO vapor to the atmosphere, during the heating diffusion treatment, ZnO is evaporated from the film, the film composition after heat diffusion treatment ends up changing substantially, good quality crystal film can not be obtained. そのため,容器体積に対し5容積%以上のZnOを反応容器に充填しておく。 Therefore, it is filled with 5 volume% or more ZnO to the container volume to the reaction vessel. 充填する該ZnOは粉末あるいは焼結体であることが好ましい。 It is preferred that the ZnO filling is a powder or a sintered body. 高温での加熱拡散処理によりZnO粉末からZnOが蒸発し、反応容器内部のZnO蒸気圧を高め,薄膜中のZnOの蒸発を抑制することができる。 ZnO is evaporated from the ZnO powder by heat diffusion treatment at a high temperature to enhance the reaction vessel inside of ZnO vapor pressure, it is possible to suppress evaporation of ZnO in the film.
【0022】 [0022]
InMO 3 (ZnO) m (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)とZnO膜が相互に拡散・反応し、温度を適切に設定すれば、均一組成InMO 3 (ZnO) m' (M=In, Fe, Ga,又はAl, m'=1以上50未満の整数)となる。 InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) and the ZnO film is diffused and reacted with each other, by appropriately setting the temperature, homogeneous composition InMO 3 become (ZnO) m '(M = in, Fe, Ga, or Al, m' = 1 or 50 less than an integer). m'は、InMO 3 (ZnO) m (M=In, Fe, Ga,又は Al, m=1以上50未満の整数)とZnO膜厚比から決まるが、ZnO膜厚が5nm未満で、InMO 3 (ZnO) m (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)膜厚が100nmを越える場合には、m=m'である。 m 'is, InMO 3 (ZnO) m ( M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) is determined from the ZnO film thickness ratio, less than 5nm is ZnO film thickness, InMO 3 If (ZnO) m (M = in , Fe, Ga, or the Al, m = 1 or more 50 than an integer) thickness exceeds 100nm is m = m '.
【0023】 [0023]
適切な温度は800℃以上,1600℃以下,より好ましくは1200℃以上,1500℃以下である。 Suitable temperatures are 800 ° C. or higher, 1600 ° C. or less, more preferably 1200 ° C. or more and 1500 ° C. or less. 800℃未満では拡散が遅く,均一組成のInMO 3 (ZnO) m (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)が得られない。 Slow diffusion below 800 ° C., InMO 3 of uniform composition (ZnO) m (M = In , Fe, Ga, or Al, m = 1 or more 50 than an integer) can not be obtained. また,1600℃を越えるとZnOの蒸発が抑えられなくなり均一組成のInMO 3 (ZnO) m (M=In, Fe, Ga, 又はAl, m=1以上50未満の整数)が得られない。 Further, InMO of uniform composition can not be suppressed evaporation of ZnO exceeds 1600 ℃ 3 (ZnO) m ( M = In, Fe, Ga, or Al, m = 1 or more 50 than an integer) can not be obtained.
【0024】 [0024]
得られた単結晶薄膜は、MO 3 (ZnO) m層をInO 1.5層で挟んだ自然超格子構造とみなすことができるので、MO 3 (ZnO) m層とInO 1.5層との界面に存在する電子に、量子効果が生じる。 Single crystal thin film obtained, since the MO 3 (ZnO) m layer can be regarded as a natural superlattice structure sandwiched by InO 1.5 layers, present at the interface between the MO 3 (ZnO) m layer and InO 1.5 layer in electronic, quantum effects occur. このため、得られた単結晶薄膜は、人工超格子構造と同様に、高周波電子デバイス材料として使用することができる。 Thus, the obtained single crystal thin film, like the artificial superlattice structure can be used as a high frequency electronic device materials.
【0025】 [0025]
また、反応性固相エピタキシャル成長法で得られたZnOを含むホモロガス単結晶膜は、化学量論組成に近く、室温では、10 8 W・cm以上の高い絶縁性を示し、ノーマリーオフ電界効果型トランジスタに適している。 Also, homologous single-crystal film containing ZnO obtained by the reactive solid phase epitaxial growth method is close to the stoichiometric composition, at room temperature, it shows a more than 10 8 W · cm high insulating properties, normally-off field effect It is suitable for the transistor.
【0026】 [0026]
得られたZnOを主たる構成成分として含有するホモロガス単結晶薄膜を活性層とした、トップゲート型MIS電界効果型トランジスタを作製することができる。 The homologous single-crystal thin film containing the obtained ZnO as main component and an active layer, can be manufactured top-gate type MIS field-effect transistor. 図3に示すように、まず、基板1上にエピタキシャル成長したZnOを主たる構成成分として含有するホモロガス単結晶薄膜2上にゲート絶縁膜3及びゲート電極4用の金属膜を形成する。 As shown in FIG. 3, first, a metal film of the gate insulating film 3 and the gate electrode 4 on homologous single-crystal thin film 2 containing ZnO epitaxially grown on the substrate 1 as a main component. ゲート絶縁膜3には、Al 2 O 3が最も適している。 The gate insulating film 3, Al 2 O 3 is most suitable. ゲート電極4用金属膜は、Au,Ag,Al、又はCu等を用いることができる。 Metal film for a gate electrode 4 may be used Au, Ag, Al, or Cu or the like. 光リゾグラフィー法及びドライエッチング、又はリフトオフ法により、ゲート電極4を作製し、最後に、ソース電極5及びドレイン電極6を作成する。 Light lyso Photography method and a dry etching, or by a lift-off method, to prepare a gate electrode 4, finally, to create a source electrode 5 and drain electrode 6. 本発明の電界効果型トランジスタの形状は、トップゲート型MIS電界効果型トランジスタ(MIS-FET)に限られるものではなく、J-FET等も含まれる。 The shape of the field-effect transistor of the present invention is not limited to the top gate type MIS field-effect transistor (MIS-FET), J-FET or the like are also included.
【0027】 [0027]
ZnOを主たる構成成分として含有するホモロガスアモルファス薄膜を用いても、同様に、トップゲート型MIS電界効果型トランジスタを作成することができる。 Be used e Moro gas amorphous thin film containing ZnO as a main component, similarly, it is possible to create a top-gate type MIS field-effect transistor. また、アモルファス薄膜の場合は、エピタキシャル成長させる必要はないので、ZnOエピタキシャル成長及び高温アニールプロセスを除くことができる。 In the case of amorphous thin, it is not necessary to epitaxially grow, can be removed ZnO epitaxial growth and high temperature annealing process. このために、ゲート電極を基板と膜の間に作りつけることが可能で、ボトムゲート型MIS電界効果型トランジスタも作製することができる。 For this, can be given to make a gate electrode between the substrate and the film can also be made bottom-gate type MIS field-effect transistor.
【0028】 [0028]
【実施例】 【Example】
以下に実施例を挙げて本発明を詳細に説明する実施例1 Example 1 illustrate the present invention the following examples
1. 単結晶InGaO 3 (ZnO) 5薄膜の作製 1. Preparation of single crystal InGaO 3 (ZnO) 5 thin film
YSZ (111)単結晶基板上にPLD法により厚み2nmのZnO薄膜を基板温度700℃でエピタキシャル成長させた。 The ZnO thin film having a thickness of 2nm was epitaxially grown at a substrate temperature of 700 ° C. by YSZ (111) PLD method on a single crystal substrate. 次に、基板温度を室温まで冷却し、該ZnOエピタキシャル薄膜上にPLD法により、厚み150nmの多結晶InGaO 3 (ZnO) 5薄膜を堆積させた。 Then, the substrate was cooled to room temperature, by the PLD method on the ZnO epitaxial thin film was deposited a polycrystalline InGaO 3 (ZnO) 5 thin film having a thickness of 150 nm. こうして作製した二層膜を大気中に取り出し、電気炉を用いて、大気中、1400℃、30min加熱拡散処理した後、室温まで冷却した。 Thus removed bilayer film produced in the atmosphere by using an electric furnace in the atmosphere, 1400 ° C., after 30min heat diffusion treatment, and cooled to room temperature.
【0029】 [0029]
XRD測定の結果、図1に示すように、加熱して得られた薄膜は単結晶InGaO 3 (ZnO) 5であり、また、図2に示すように、AFM観察の結果、薄膜表面は原子レベルで平坦なテラスと、高さ2nmのステップからなる原子レベルで平坦な面であった。 XRD results of the measurement, as shown in FIG. 1, a thin film obtained by heating is 5 single crystal InGaO 3 (ZnO), also as shown in FIG. 2, AFM observation showed that the thin film surface is atomically in a flat terrace and a flat surface at the atomic level comprising a step of height 2 nm. 単結晶InGaO 3 (ZnO) 5薄膜の導電率を直流四端子法により測定しようと試みたが、膜の絶縁性が高いために測定できなかった。 The single crystal InGaO 3 (ZnO) 5 thin film conductivity of the attempts to measure by a direct current four-terminal method, but could not be measured due to the high insulating property of the film. 作製した単結晶InGaO 3 (ZnO) 5薄膜は絶縁体であると言える。 Single crystal InGaO 3 (ZnO) 5 thin film prepared is said to be an insulator. 室温で測定した光吸収スペクトルからInGaO 3 (ZnO) 5のバンドギャップは約3.3eVと見積もられた。 Bandgap of InGaO 3 (ZnO) 5 from light absorption spectrum measured at room temperature was estimated to be about 3.3 eV.
【0030】 [0030]
2. MISFET素子の作製フォトリソグラフィー法により、トップゲート型MISFET素子を作製した。 2. By making photolithography of the MISFET element was prepared top gate type MISFET element.
ソースとドレイン電極及びゲート絶縁膜にはAu及びアモルファスAl 2 O 3をそれぞれ用いた。 The source and drain electrodes and the gate insulating film with Au and amorphous Al 2 O 3, respectively. チャネル長及びチャネル幅はそれぞれ0.05mm及び0.2mmである。 The channel length and the channel width is 0.05mm and 0.2mm, respectively.
【0031】 [0031]
3. MISFET素子の特性評価図4に、室温下で測定したMISFET素子の電流−電圧特性を示す。 3. Characterization Figure 4 of the MISFET device, the current of the MISFET element measured at room temperature - voltage characteristics thereof are shown. ゲート電圧V G =0V時にはI DS =10 -8 A(V DS =2.0 V)であり、いわゆるノーマリーOFF特性が得られた。 The gate voltage V G = 0V sometimes I DS = 10 -8 A (V DS = 2.0 V), so-called a normally OFF characteristic was obtained. また、V G =10 V時には、I DS =1.6X 10 -6 Aの電流が流れた。 Also, V G = 10 V at times flowed a current of I DS = 1.6X 10 -6 A. これはゲートバイアスにより絶縁体のInGaO 3 (ZnO) 5単結晶薄膜内にキャリアを誘起できたことに対応する。 This corresponds with successful induction of carriers InGaO 3 (ZnO) 5 single crystal thin film of an insulator with gate bias. 作製した素子に可視光を照射して同様の測定を行なったが、数値の変化は認められなかった。 It was measured similar by irradiating visible light to the fabricated device, but the change in values ​​were not observed. 可視光での光誘起電流の発生は認められなかった。 Generation of light-induced current in the visible light was observed.
【0032】 [0032]
【発明の効果】 【Effect of the invention】
本発明の透明薄膜電界効果型トランジスタは、波長400nm以上の可視光・赤外光に対して透明である上、ノーマリーOFFのスイッチングが可能である。 Transparent thin film field effect transistor of the present invention, on a transparent to more visible and infrared light wavelength 400 nm, is capable of switching the normally OFF. 本発明の透明薄膜電界効果型トランジスタをLCDのスイッチング素子として応用することにより、バックライト光をロスなく有効に使うことができる上、シースルー型のディスプレイへの発展が期待できる。 By applying the transparent thin film field effect transistor of the present invention as a LCD of the switching element, on which it is possible to use a back light without loss effectively, the development of the see-through display can be expected.
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】図1は、実施例1で作製した単結晶InGaO 3 (ZnO) 5薄膜のXRD測定の結果を示すグラフである。 [1] Figure 1 is a graph showing the results of a single crystal InGaO 3 (ZnO) 5 thin film XRD measurements made in Example 1.
【図2】図2は、実施例1で作製した単結晶InGaO 3 (ZnO) 5薄膜の表面構造示す図面代用AFM観察写真である。 Figure 2 is a drawing substitute AFM observation photograph showing the surface structure of single crystal InGaO 3 (ZnO) 5 thin film prepared in Example 1.
【図3】図3は、本発明の一実施形態のMISFET素子の構造を示す模式図である。 Figure 3 is a schematic diagram showing the structure of a MISFET device in an embodiment of the present invention.
【図4】図4は、実施例1で作製したMISFET素子の室温下で測定した電流−電圧特性を示すグラフである。 Figure 4 shows the current was measured at room temperature of the MISFET element prepared in Example 1 - is a graph showing the voltage characteristic.

Claims (4)

  1. ホモロガス化合物InMO 3 (ZnO) m (M=In, Fe, Ga ,又はAl, m=1以上50未満の整数)薄膜を活性層として用いることを特徴とする透明薄膜電界効果型トランジスタ。 Homologous compound InMO 3 (ZnO) m (M = In, Fe, Ga, or Al, m = 1 50 less integer higher) transparent thin film field effect transistor characterized by using a thin film as an active layer.
  2. 表面が原子レベルで平坦である単結晶又はアモルファスホモロガス化合物薄膜を用いることを特徴とする請求項1記載の透明薄膜電界効果型トランジスタ。 Transparent thin film field effect transistor of claim 1, wherein the surface is characterized by using a single crystal or amorphous e Moro gas compound thin film is flat at the atomic level.
  3. ホモロガス化合物が耐熱性、透明酸化物単結晶基板上に形成された単結晶薄膜であることを特徴とする請求項1記載の透明薄膜電界効果型トランジスタ。 Homologous compound is heat-resistant, transparent oxide transparent thin film field effect transistor according to claim 1, characterized in that a single crystal thin film formed on a single crystal substrate.
  4. ホモロガス化合物がガラス基板上に形成されたアモルファス薄膜であることを特徴とする請求項1記載の透明薄膜電界効果型トランジスタ。 Transparent thin film field effect transistor of claim 1, wherein the homologous compound is an amorphous thin film formed on a glass substrate.
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JP4793679B2 (en) * 2005-11-10 2011-10-12 富士電機株式会社 Thin film transistor
JP5395994B2 (en) 2005-11-18 2014-01-22 出光興産株式会社 Semiconductor thin film, and a method for manufacturing the same, and a thin film transistor
CN101309864B (en) * 2005-11-18 2012-06-27 出光兴产株式会社 Semiconductor thin film, method for producing same, and thin film transistor
JP4904789B2 (en) * 2005-11-30 2012-03-28 凸版印刷株式会社 Thin film transistor
JP5177954B2 (en) 2006-01-30 2013-04-10 キヤノン株式会社 Field-effect transistor
US7817117B2 (en) * 2006-04-05 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Dry etching method for an oxide semiconductor film
JPWO2007148601A1 (en) 2006-06-19 2009-11-19 パナソニック株式会社 Thin film transistor and a manufacturing method thereof and an electronic apparatus using the same
JP5328083B2 (en) 2006-08-01 2013-10-30 キヤノン株式会社 Etching process of the oxide
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Dry etching method for an oxide semiconductor film
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 The method of manufacturing a semiconductor device and a semiconductor device
JP5542297B2 (en) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 The liquid crystal display device, the display module and an electronic device
JP4989309B2 (en) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 The liquid crystal display device
KR101376073B1 (en) 2007-06-14 2014-03-21 삼성디스플레이 주식회사 A thin film transistor array substrate and a method for their preparation comprising the same
KR101344483B1 (en) 2007-06-27 2013-12-24 삼성전자주식회사 TFTs
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8247315B2 (en) 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
JP2009267399A (en) * 2008-04-04 2009-11-12 Fujifilm Corp Semiconductor device, manufacturing method therefor, display device, and manufacturing method therefor
US8017045B2 (en) 2008-04-16 2011-09-13 Electronics And Telecommunications Research Institute Composition for oxide semiconductor thin film and field effect transistor using the composition
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP5202630B2 (en) 2008-06-10 2013-06-05 Jx日鉱日石金属株式会社 Sputtering the oxide sintered compact target and its manufacturing method
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR101656843B1 (en) 2008-07-10 2016-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and electronic device using the same
US8129717B2 (en) 2008-07-31 2012-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8293595B2 (en) 2008-07-31 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5616038B2 (en) 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5588637B2 (en) 2008-07-31 2014-09-10 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
JP5525778B2 (en) 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 Semiconductor device
US8343817B2 (en) 2008-08-08 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5608347B2 (en) 2008-08-08 2014-10-15 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
US8115201B2 (en) 2008-08-08 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor formed within
JP5480554B2 (en) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 Semiconductor device
US8021916B2 (en) 2008-09-01 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5627071B2 (en) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
KR101829673B1 (en) 2008-09-12 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101623224B1 (en) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2010029885A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101622981B1 (en) 2008-09-19 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method of the same
KR101803264B1 (en) 2008-09-19 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN103545342B (en) 2008-09-19 2018-01-26 株式会社半导体能源研究所 The semiconductor device
CN102160103B (en) 2008-09-19 2013-09-11 株式会社半导体能源研究所 The display device
EP2421030A3 (en) 2008-09-19 2015-05-27 Semiconductor Energy Laboratory Co. Ltd. Display device
KR101611643B1 (en) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101659925B1 (en) 2008-10-03 2016-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101273972B1 (en) 2008-10-03 2013-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN103928476A (en) 2008-10-03 2014-07-16 株式会社半导体能源研究所 Display Device And Method For Manufacturing The Same
CN101719493B (en) 2008-10-08 2014-05-14 株式会社半导体能源研究所 The display device
JP5484853B2 (en) 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2010044478A1 (en) 2008-10-16 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
JP5361651B2 (en) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR101667909B1 (en) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method of manufacturing a semiconductor device
KR101259727B1 (en) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5442234B2 (en) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 Semiconductor device and a display device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5616012B2 (en) * 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101603303B1 (en) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Conductive oxynitride and method for manufacturing conductive oxynitride film
WO2010050419A1 (en) 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
US8426868B2 (en) 2008-10-31 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101631454B1 (en) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit
KR101477593B1 (en) 2008-11-07 2014-12-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method of manufacturing a semiconductor device
CN101740631B (en) 2008-11-07 2014-07-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the semiconductor device
US8395148B2 (en) 2008-11-07 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5631574B2 (en) 2008-11-07 2014-11-26 株式会社半導体エネルギー研究所 Semiconductor device
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
KR20180024035A (en) 2008-11-07 2018-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing a semiconductor device
KR101432764B1 (en) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8058647B2 (en) 2008-11-13 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5123141B2 (en) 2008-11-19 2013-01-16 株式会社東芝 Display device
KR20100056970A (en) 2008-11-20 2010-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2010058746A1 (en) 2008-11-21 2010-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441425B2 (en) 2008-11-28 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9450133B2 (en) 2008-11-28 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Photosensor and display device
US8344387B2 (en) 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010064590A1 (en) 2008-12-01 2010-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101551305B1 (en) 2008-12-03 2015-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A liquid crystal display device
JP5491833B2 (en) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 Semiconductor device
WO2010071034A1 (en) 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP5615540B2 (en) 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5590877B2 (en) 2008-12-26 2014-09-17 株式会社半導体エネルギー研究所 Semiconductor device
JP5785685B2 (en) 2008-12-26 2015-09-30 株式会社半導体エネルギー研究所 Active matrix display device
KR101648927B1 (en) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
CN101840936B (en) 2009-02-13 2014-10-08 株式会社半导体能源研究所 A semiconductor device and a manufacturing method of a transistor
US8247812B2 (en) 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224880A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101671210B1 (en) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20170061190A (en) 2009-03-12 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8936963B2 (en) 2009-03-13 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8450144B2 (en) 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101681884B1 (en) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
KR101752640B1 (en) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9012918B2 (en) 2009-03-27 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor
US8927981B2 (en) 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8338226B2 (en) 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100252832A1 (en) 2009-04-02 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5624351B2 (en) 2009-04-16 2014-11-12 株式会社半導体エネルギー研究所 Semiconductor device
KR101842182B1 (en) 2009-05-01 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5751762B2 (en) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 Semiconductor device
EP2256814A1 (en) 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
EP2256795B1 (en) 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JP5564331B2 (en) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP5528727B2 (en) * 2009-06-19 2014-06-25 富士フイルム株式会社 Producing a thin film transistor device, a method of manufacturing an oxide semiconductor thin film, a method of manufacturing a thin film transistor, an oxide semiconductor thin film, thin film transistor and a light-emitting device
KR101810699B1 (en) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20170049621A (en) 2009-06-30 2017-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20180000737A (en) 2009-06-30 2018-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101645061B1 (en) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5663214B2 (en) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
KR20170119742A (en) 2009-07-03 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101476817B1 (en) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including transistor and manufacturing method thereof
JP5640478B2 (en) 2009-07-09 2014-12-17 株式会社リコー Preparation and field effect transistor of the field-effect transistor
KR101493662B1 (en) 2009-07-10 2015-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, electronic appliance and display panel
KR101460868B1 (en) 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101820176B1 (en) 2009-07-10 2018-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010543A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN105070749A (en) 2009-07-18 2015-11-18 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
WO2011010546A1 (en) 2009-07-24 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101541630B1 (en) 2009-07-31 2015-08-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120051720A (en) 2009-07-31 2012-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013522A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629441B2 (en) 2009-08-07 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101760241B1 (en) 2009-08-07 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
EP2284891A3 (en) 2009-08-07 2015-10-07 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
KR101689725B1 (en) 2009-08-07 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP5642447B2 (en) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 Semiconductor device
US8502220B2 (en) 2009-08-07 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
JP5700626B2 (en) 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 El display device
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027723A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101506124B1 (en) 2009-09-04 2015-03-25 가부시끼가이샤 도시바 Thin-film transistor and method for manufacturing the thin-film transistor
CN102484140B (en) 2009-09-04 2015-04-22 株式会社半导体能源研究所 Manufacturing method of semiconductor device
KR101746198B1 (en) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
KR101707433B1 (en) 2009-09-04 2017-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and method for manufacturing the same
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011034012A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
KR101301461B1 (en) 2009-09-16 2013-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and oxide semiconductor layer
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
KR20170131713A (en) 2009-09-16 2017-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and manufacturing method thereof
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
KR101700470B1 (en) 2009-09-16 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device including the driver circuit, and electronic device including the display device
KR101811197B1 (en) 2009-09-24 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, power circuit, and manufacturing method of semiconductor device
KR20170139683A (en) 2009-09-24 2017-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
WO2011037213A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102549758B (en) 2009-09-24 2015-11-25 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR101809759B1 (en) 2009-09-24 2018-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor element and method for manufacturing the same
KR20180015759A (en) 2009-09-24 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device including the driver circuit, and electronic appliance including the display device
KR101740943B1 (en) 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011040349A1 (en) 2009-09-30 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Redox capacitor and manufacturing method thereof
WO2011040213A1 (en) 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
WO2011043203A1 (en) 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
EP2486594B1 (en) 2009-10-08 2017-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20170085148A (en) 2009-10-09 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102549638B (en) 2009-10-09 2015-04-01 株式会社半导体能源研究所 Light-emitting display device and electronic device including the same
WO2011043218A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043451A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device
WO2011043164A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101424950B1 (en) 2009-10-09 2014-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
KR101820972B1 (en) 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011043162A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101843558B1 (en) 2009-10-09 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register and display device and driving method thereof
KR20170098992A (en) 2009-10-16 2017-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011046010A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
KR101745747B1 (en) 2009-10-16 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
WO2011046015A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR20170119735A (en) 2009-10-21 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Analog circuit and semiconductor device
WO2011048959A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5730529B2 (en) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 Semiconductor device
WO2011048968A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120096469A (en) 2009-10-21 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101803554B1 (en) 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011048924A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
KR101801959B1 (en) 2009-10-21 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the same
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
CN102598247B (en) 2009-10-29 2015-05-06 株式会社半导体能源研究所 Semiconductor device
WO2011052411A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011052368A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
CN102668095B (en) 2009-10-30 2016-08-03 株式会社半导体能源研究所 Transistor
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
CN102576172B (en) 2009-10-30 2016-01-27 株式会社半导体能源研究所 The liquid crystal display apparatus, driving method and an electronic appliance comprising the liquid crystal display device
KR101752348B1 (en) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011052413A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device, and electronic device
EP2494692B1 (en) 2009-10-30 2016-11-23 Semiconductor Energy Laboratory Co. Ltd. Logic circuit and semiconductor device
WO2011052410A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
KR20180027625A (en) 2009-10-30 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102576708B (en) 2009-10-30 2015-09-23 株式会社半导体能源研究所 The semiconductor device
KR101727469B1 (en) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display
WO2011055631A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20170086681A (en) 2009-11-06 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20120102682A (en) 2009-11-06 2012-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102598279B (en) 2009-11-06 2015-10-07 株式会社半导体能源研究所 The semiconductor device
KR101753927B1 (en) 2009-11-06 2017-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101605984B1 (en) 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5539846B2 (en) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 Evaluation method, a method for manufacturing a semiconductor device
KR20120093952A (en) 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
CN104393007A (en) 2009-11-06 2015-03-04 株式会社半导体能源研究所 The semiconductor device
WO2011055644A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20170089033A (en) 2009-11-06 2017-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101751560B1 (en) 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20110053192A (en) 2009-11-13 2011-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for packaging target material and method for mounting target
KR101738996B1 (en) 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Device including nonvolatile memory element
WO2011058882A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101721850B1 (en) 2009-11-13 2017-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011058866A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN102598095B (en) 2009-11-13 2016-02-10 株式会社半导体能源研究所 A display device and an electronic device comprising a display device
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR101370301B1 (en) 2009-11-20 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101829176B1 (en) 2009-11-20 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101448908B1 (en) 2009-11-20 2014-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011062075A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR20170117208A (en) 2009-11-20 2017-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
WO2011062057A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5762723B2 (en) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 Modulation circuit and semiconductor device including the same
KR20170143015A (en) 2009-11-20 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101790365B1 (en) 2009-11-20 2017-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101800854B1 (en) 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101662359B1 (en) 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device including memory cell
KR101803254B1 (en) 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101844972B1 (en) 2009-11-27 2018-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011065198A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011065244A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2504855A4 (en) 2009-11-28 2016-07-20 Semiconductor Energy Lab Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR101396015B1 (en) 2009-11-28 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2507787A4 (en) 2009-11-30 2013-07-17 Semiconductor Energy Lab Liquid crystal display device, method for driving the same, and electronic device including the same
KR20120107107A (en) 2009-12-04 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101523358B1 (en) 2009-12-04 2015-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20120094091A (en) 2009-12-04 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
EP2507823A4 (en) 2009-12-04 2014-05-14 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
WO2011068106A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
WO2011068028A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
KR101833198B1 (en) * 2009-12-04 2018-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
JP5584103B2 (en) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 Semiconductor device
KR20120099475A (en) 2009-12-04 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8432718B2 (en) 2009-12-04 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101800038B1 (en) 2009-12-04 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR20120106786A (en) 2009-12-08 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20180023018A (en) 2009-12-08 2018-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011070902A1 (en) 2009-12-10 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2011070901A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101481398B1 (en) 2009-12-11 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Latch circuit and cpu
JP5727204B2 (en) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
CN102656683B (en) 2009-12-11 2015-02-11 株式会社半导体能源研究所 The semiconductor device
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
KR101768433B1 (en) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011074379A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
KR101763508B1 (en) 2009-12-18 2017-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of display device and display device
WO2011074408A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
WO2011074506A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
CN102667910B (en) 2009-12-18 2015-11-25 株式会社半导体能源研究所 The liquid crystal display device and the electronic device
CN102725784B (en) 2009-12-18 2016-03-23 株式会社半导体能源研究所 Having a display device and a driving method for an optical sensor
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101813460B1 (en) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN105429621A (en) 2009-12-23 2016-03-23 株式会社半导体能源研究所 The semiconductor device
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20120101716A (en) 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
EP2517245A4 (en) 2009-12-25 2014-01-01 Semiconductor Energy Lab Semiconductor device
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2011077967A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077966A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8441009B2 (en) 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011077925A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
CN105590646A (en) 2009-12-25 2016-05-18 株式会社半导体能源研究所 Memory Device, Semiconductor Device, And Electronic Device
WO2011081000A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
CN105702631A (en) 2009-12-28 2016-06-22 株式会社半导体能源研究所 Semiconductor device
KR101436120B1 (en) * 2009-12-28 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101798367B1 (en) 2010-01-15 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011086837A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2011086871A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102725841B (en) 2010-01-15 2016-10-05 株式会社半导体能源研究所 Semiconductor device
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR20120099483A (en) 2010-01-15 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR101848516B1 (en) 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102713999B (en) 2010-01-20 2016-01-20 株式会社半导体能源研究所 Electronic equipment and electronic systems
KR20120127601A (en) 2010-01-20 2012-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Signal processing circuit and method for driving the same
KR101722420B1 (en) 2010-01-20 2017-04-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Portable electronic device
CN102714029B (en) 2010-01-20 2016-03-23 株式会社半导体能源研究所 Display device a display
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
WO2011089832A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
WO2011089843A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
WO2011089842A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
CN102714024B (en) 2010-01-20 2015-09-02 株式会社半导体能源研究所 The display device
EP2526622B1 (en) 2010-01-20 2015-09-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
WO2011089841A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102714209B (en) 2010-01-22 2015-09-16 株式会社半导体能源研究所 The semiconductor memory device and a driving method
WO2011089846A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106057162A (en) 2010-01-24 2016-10-26 株式会社半导体能源研究所 The display device
KR20170137213A (en) 2010-01-24 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101800850B1 (en) 2010-01-29 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN102714001B (en) 2010-01-29 2015-11-25 株式会社半导体能源研究所 The semiconductor device and the electronic device comprising a semiconductor device
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101791713B1 (en) 2010-02-05 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and semiconductor device
KR101399610B1 (en) 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20120123524A (en) 2010-02-05 2012-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011096264A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR20120125320A (en) 2010-02-05 2012-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of driving semiconductor device
CN105405747A (en) 2010-02-05 2016-03-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102725842B (en) 2010-02-05 2014-12-03 株式会社半导体能源研究所 Semiconductor device
KR101810261B1 (en) 2010-02-10 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011099389A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
WO2011099376A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR101830196B1 (en) 2010-02-12 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
KR20180001594A (en) 2010-02-12 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and driving method
KR101775180B1 (en) 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR101838130B1 (en) 2010-02-12 2018-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN102754209B (en) 2010-02-12 2015-11-25 株式会社半导体能源研究所 A semiconductor device and a driving method
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5776192B2 (en) * 2010-02-16 2015-09-09 株式会社リコー Field effect transistor, a display device, image display device and system
KR101774470B1 (en) 2010-02-18 2017-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
WO2011102228A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
KR20120138770A (en) 2010-02-19 2012-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and display device using the same
KR101780748B1 (en) 2010-02-19 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Demodulation circuit and rfid tag including the demodulatiion circuit
JP5740169B2 (en) 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 A method for manufacturing a transistor
KR101832119B1 (en) 2010-02-19 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011102248A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011102233A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120135412A (en) 2010-02-19 2012-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
CN104617105B (en) 2010-02-19 2018-01-26 株式会社半导体能源研究所 The semiconductor device
KR101773984B1 (en) 2010-02-19 2017-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and method for driving display device
CN105826363A (en) 2010-02-19 2016-08-03 株式会社半导体能源研究所 Semiconductor device and method for manufacturing same
CN105788645A (en) 2010-02-23 2016-07-20 株式会社半导体能源研究所 Display device, semiconductor device, and driving method thereof
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102782859B (en) 2010-02-26 2015-07-29 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
CN102763203B (en) 2010-02-26 2016-10-26 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011105218A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and e-book reader provided therewith
CN102770902B (en) 2010-02-26 2016-11-23 株式会社半导体能源研究所 The display apparatus and driving method thereof
KR20120120458A (en) 2010-02-26 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
WO2011105183A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
CN105245218A (en) 2010-03-02 2016-01-13 株式会社半导体能源研究所 Pulse signal output circuit and the shift register
KR101838628B1 (en) 2010-03-02 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Pulse signal output circuit and shift register
KR101767037B1 (en) 2010-03-02 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Boosting circuit and rfid tag including boosting circuit
CN105553462A (en) 2010-03-02 2016-05-04 株式会社半导体能源研究所 Pulse signal output circuit and the shift register
WO2011108475A1 (en) 2010-03-04 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
WO2011108374A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011108346A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
WO2011108381A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130007597A (en) 2010-03-08 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011111504A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
KR20130027012A (en) 2010-03-08 2013-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
WO2011111522A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106449649A (en) 2010-03-08 2017-02-22 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
KR101784676B1 (en) 2010-03-08 2017-10-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101823853B1 (en) 2010-03-12 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8900362B2 (en) 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
DE112011100886T5 (en) 2010-03-12 2012-12-27 Semiconductor Energy Laboratory Co., Ltd. A driving method of display device
CN102804380B (en) 2010-03-12 2015-11-25 株式会社半导体能源研究所 The semiconductor device
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
CN102812547B (en) 2010-03-19 2015-09-09 株式会社半导体能源研究所 The semiconductor device
KR101840797B1 (en) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114867A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118351A1 (en) 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118364A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130062919A (en) 2010-03-26 2013-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
CN102822980B (en) 2010-03-26 2015-12-16 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102884477B (en) 2010-03-31 2015-11-25 株式会社半导体能源研究所 The liquid crystal display device and a driving method
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR101761966B1 (en) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power supply device and driving method thereof
KR20130069583A (en) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field-sequential display device
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
KR20180031065A (en) 2010-04-02 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
WO2011122364A1 (en) 2010-04-02 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130042486A (en) 2010-04-07 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN102918650B (en) 2010-04-07 2017-03-22 株式会社半导体能源研究所 Transistor
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011125454A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112011101260T5 (en) 2010-04-09 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. A liquid crystal display device and method for driving the same
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
WO2011129209A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
KR20130056240A (en) 2010-04-16 2013-05-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011129456A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN106057907A (en) 2010-04-23 2016-10-26 株式会社半导体能源研究所 Method for manufacturing semiconductor device
CN103500709B (en) 2010-04-23 2015-09-23 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101800844B1 (en) 2010-04-23 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102859705B (en) 2010-04-23 2015-12-09 株式会社半导体能源研究所 The method of manufacturing a semiconductor device and a semiconductor device
WO2011132555A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
KR101831147B1 (en) 2010-04-28 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor display device and driving method the same
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (en) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 Evaluation method of a semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8406038B2 (en) 2010-05-14 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101806271B1 (en) 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
JP5923248B2 (en) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 Semiconductor device
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
KR20130082091A (en) 2010-05-21 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20130111957A (en) 2010-05-21 2013-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101808198B1 (en) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5766012B2 (en) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 The liquid crystal display device
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145632A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5852793B2 (en) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 Method for manufacturing a liquid crystal display device
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5714973B2 (en) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 Semiconductor device
WO2011145706A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5749975B2 (en) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 Photodetector, and a touch panel
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130079450A (en) 2010-06-04 2013-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112011101969B4 (en) 2010-06-11 2018-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
JP5797471B2 (en) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 Input and output devices
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5823740B2 (en) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 Input and output devices
WO2011158703A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR20120000499A (en) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and semiconductor device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
WO2012002236A1 (en) 2010-06-29 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9473714B2 (en) 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101801960B1 (en) 2010-07-01 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of liquid crystal display device
KR20130030295A (en) 2010-07-02 2013-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
CN107452630A (en) 2010-07-02 2017-12-08 株式会社半导体能源研究所 The semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2012002197A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5792524B2 (en) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 apparatus
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9224339B2 (en) 2010-07-02 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103003934B (en) 2010-07-16 2015-07-01 株式会社半导体能源研究所 Semiconductor device
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5917035B2 (en) 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 Semiconductor device
JP5836680B2 (en) 2010-07-27 2015-12-24 株式会社半導体エネルギー研究所 A semiconductor device and a manufacturing method thereof
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5777964B2 (en) 2010-07-28 2015-09-16 株式会社半導体エネルギー研究所 Semiconductor device
JP5846789B2 (en) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
KR101842181B1 (en) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5671418B2 (en) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5832181B2 (en) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 The liquid crystal display device
JP5743790B2 (en) 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 Semiconductor device
US8614916B2 (en) 2010-08-06 2013-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20120032171A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
DE112011102644T5 (en) 2010-08-06 2013-06-06 Semiconductor Energy Laboratory Co., Ltd. The semiconductor integrated circuit
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012017844A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5848912B2 (en) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 The control circuit of the liquid crystal display device, a liquid crystal display device, and electronic device including the liquid crystal display device
US8748224B2 (en) 2010-08-16 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
US8823082B2 (en) 2010-08-19 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5727892B2 (en) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 Semiconductor device
US8787073B2 (en) 2010-08-26 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
JP5806043B2 (en) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2012026503A1 (en) 2010-08-27 2012-03-01 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR20120020073A (en) 2010-08-27 2012-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method for designing a semiconductor
JP5763474B2 (en) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 Light sensor
JP5674594B2 (en) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 The driving method of a semiconductor device and a semiconductor device
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130102581A (en) 2010-09-03 2013-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130099074A (en) 2010-09-03 2013-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target and method for manufacturing semiconductor device
US8674972B2 (en) 2010-09-08 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101824125B1 (en) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
KR20120028231A (en) 2010-09-13 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR20120028225A (en) 2010-09-13 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120028228A (en) 2010-09-13 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5815337B2 (en) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 Semiconductor device
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
JP5827520B2 (en) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 A semiconductor memory device
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
KR20130119421A (en) 2010-09-13 2013-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
KR20120028229A (en) 2010-09-13 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5696009B2 (en) 2010-09-14 2015-04-08 株式会社半導体エネルギー研究所 Semiconductor device
US9368053B2 (en) 2010-09-15 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101426515B1 (en) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device
WO2012035975A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8994003B2 (en) 2010-09-22 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Power-insulated-gate field-effect transistor
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
KR20120033244A (en) 2010-09-29 2012-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device and method for driving the same
US8553447B2 (en) 2010-10-05 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
JP5877992B2 (en) * 2010-10-25 2016-03-08 株式会社半導体エネルギー研究所 Display device
US8599604B2 (en) 2010-10-25 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
JP5771505B2 (en) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 Reception circuit
KR20130142109A (en) 2010-10-29 2013-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Storage device
KR20120046023A (en) 2010-10-29 2012-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
US8871304B2 (en) 2010-11-02 2014-10-28 Ube Industries, Ltd. (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6010291B2 (en) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 Method of driving a display device
US9299851B2 (en) 2010-11-05 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130139260A (en) 2010-11-05 2013-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103201831B (en) 2010-11-05 2015-08-05 株式会社半导体能源研究所 The semiconductor device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
US8802515B2 (en) 2010-11-11 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5770068B2 (en) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 Semiconductor device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8728883B2 (en) 2010-11-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8809852B2 (en) * 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5908263B2 (en) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Dc-dc converter
US8705267B2 (en) 2010-12-03 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, method for driving the same, and semiconductor device
DE112011104002T5 (en) 2010-12-03 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor and semiconductor device
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
US8658448B2 (en) 2010-12-10 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP2012256020A (en) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method for the same
US9424923B2 (en) 2010-12-17 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5852874B2 (en) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 Semiconductor device
JP5993141B2 (en) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 Storage device
JP6030298B2 (en) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 Buffer storage device and the signal processing circuit
WO2012090974A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5864054B2 (en) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 Semiconductor device
JP5973165B2 (en) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5784479B2 (en) 2010-12-28 2015-09-24 株式会社半導体エネルギー研究所 Semiconductor device
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9287294B2 (en) 2010-12-28 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device having oxide semiconductor
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5256339B2 (en) 2011-01-05 2013-08-07 株式会社半導体エネルギー研究所 Storage device
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8785266B2 (en) 2011-01-12 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5836132B2 (en) 2011-01-12 2015-12-24 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5859839B2 (en) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 The driving method of the memory element, and a storage element
KR20120082815A (en) 2011-01-14 2012-07-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and detecting method
US8811064B2 (en) 2011-01-14 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including multilayer wiring layer
JP5897910B2 (en) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8865555B2 (en) 2011-01-26 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809992B2 (en) 2011-01-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9209092B2 (en) 2011-01-26 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a wide-gap semiconductor layer on inner wall of trench
CN103348464B (en) 2011-01-26 2016-01-13 株式会社半导体能源研究所 Semiconductor device and manufacturing method
JP5798933B2 (en) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 Signal processing circuit
KR20130140824A (en) 2011-01-27 2013-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8773906B2 (en) 2011-01-27 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
DE112012000601T5 (en) 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. A method of manufacturing a semiconductor device and semiconductor device
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8809927B2 (en) 2011-02-02 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US9167234B2 (en) 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20120094834A (en) 2011-02-17 2012-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable lsi
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5898527B2 (en) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 Semiconductor device
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827145B2 (en) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 Signal processing circuit
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
JP6027320B2 (en) 2011-03-11 2016-11-16 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8828794B2 (en) 2011-03-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9184296B2 (en) 2011-03-11 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having c-axis aligned portions and doped portions
JP5933300B2 (en) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 Semiconductor device
JP5933897B2 (en) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20140025384A (en) 2011-03-18 2014-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8754409B2 (en) 2011-03-25 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Field-effect transistor, and memory and semiconductor circuit including the same
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9472676B2 (en) 2011-03-25 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6053098B2 (en) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 Semiconductor device
JP5879165B2 (en) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
JP5839477B2 (en) 2011-03-31 2016-01-06 株式会社半導体エネルギー研究所 Memory circuit
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5982147B2 (en) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 The light-emitting device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP5883699B2 (en) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 Programmable lsi
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP5890234B2 (en) 2011-04-15 2016-03-22 株式会社半導体エネルギー研究所 The semiconductor device and a driving method thereof
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6001900B2 (en) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 Signal processing circuit
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
JP5295302B2 (en) * 2011-04-25 2013-09-18 富士フイルム株式会社 Metal alkoxide solution
CN105931967A (en) 2011-04-27 2016-09-07 株式会社半导体能源研究所 Manufacturing method of semiconductor device
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8803559B2 (en) 2011-04-28 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit having switching element, capacitor, and operational amplifier circuit
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
JP5882824B2 (en) 2011-04-29 2016-03-09 株式会社半導体エネルギー研究所 A semiconductor memory device
US9001563B2 (en) 2011-04-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6005390B2 (en) 2011-05-05 2016-10-12 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6076616B2 (en) 2011-05-06 2017-02-08 株式会社半導体エネルギー研究所 Semiconductor device
KR20140029430A (en) 2011-05-06 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8947910B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising inverters and capacitor, and driving method thereof
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US8912985B2 (en) 2011-05-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112012002077T5 (en) 2011-05-13 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
KR20140040128A (en) 2011-05-13 2014-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6109489B2 (en) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 El display device
JP5959296B2 (en) 2011-05-13 2016-08-02 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP5886128B2 (en) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
US8705292B2 (en) 2011-05-13 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory circuit with an oxide semiconductor transistor for reducing power consumption and electronic device
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
CN103534950B (en) 2011-05-16 2017-07-04 株式会社半导体能源研究所 Programmable logic device
JP6068829B2 (en) 2011-05-17 2017-01-25 株式会社半導体エネルギー研究所 Semiconductor device
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8824193B2 (en) 2011-05-18 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US9172237B2 (en) 2011-05-19 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US9117920B2 (en) 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
JP6002433B2 (en) 2011-05-19 2016-10-05 株式会社半導体エネルギー研究所 The driving method of the arithmetic circuit and the ALU
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP5947101B2 (en) 2011-05-19 2016-07-06 株式会社半導体エネルギー研究所 circuit
CN102789808B (en) 2011-05-20 2018-03-06 株式会社半导体能源研究所 The memory device and a method for driving the memory device
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8587342B2 (en) 2011-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
JP6091083B2 (en) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 Storage device
JP5886496B2 (en) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
JP5820335B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
US8729938B2 (en) 2011-05-20 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Phase locked loop and semiconductor device using the same
JP6030334B2 (en) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 Storage device
JP5947099B2 (en) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 Semiconductor device
JP5892852B2 (en) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 Programmable logic device
JP6013682B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
WO2012160963A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048105B2 (en) 2011-05-20 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP6082189B2 (en) 2011-05-20 2017-02-15 株式会社半導体エネルギー研究所 Storage device and a signal processing circuit
JP6013680B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6166866B2 (en) 2011-05-20 2017-07-19 株式会社半導体エネルギー研究所 Semiconductor device
JP5951351B2 (en) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 Adder and full adder
JP5936908B2 (en) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 Parity bit output circuit and the parity check circuit
JP5820336B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR20140035960A (en) 2011-05-26 2014-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Divider circuit and semiconductor device using the same
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
JP5912844B2 (en) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 Programmable logic device
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5717546B2 (en) 2011-06-01 2015-05-13 三菱電機株式会社 A thin film transistor substrate and a method of manufacturing the same
JP5890251B2 (en) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 Communication method
DE112012002394T5 (en) 2011-06-08 2014-02-20 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method of manufacturing a sputter target and method for forming a thin film
US8958231B2 (en) 2011-06-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Memory device including first to seventh transistors
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6104522B2 (en) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 Semiconductor device
US9112036B2 (en) 2011-06-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP6005401B2 (en) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR20120139560A (en) * 2011-06-16 2012-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and a method for manufacturing the same
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2012172746A1 (en) 2011-06-17 2012-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US9318506B2 (en) 2011-07-08 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130006310A (en) 2011-07-08 2013-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8912596B2 (en) 2011-07-15 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6013685B2 (en) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
JP6006572B2 (en) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device
US9136297B2 (en) 2011-08-19 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP6128775B2 (en) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
JP6116149B2 (en) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 Semiconductor device
KR20140066695A (en) 2011-08-29 2014-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP6016532B2 (en) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6050054B2 (en) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (en) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 Power insulated-gate field-effect transistor
JP5832399B2 (en) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 The light-emitting device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103022012B (en) 2011-09-21 2017-03-01 株式会社半导体能源研究所 The semiconductor memory device
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
KR20130033308A (en) 2011-09-26 2013-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP5740270B2 (en) 2011-09-27 2015-06-24 株式会社東芝 TFT, a manufacturing method thereof, and a display device
KR20130034608A (en) 2011-09-28 2013-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register circuit
KR101506303B1 (en) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103843146B (en) 2011-09-29 2016-03-16 株式会社半导体能源研究所 Semiconductor device
KR20140066222A (en) 2011-09-29 2014-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
JP5806905B2 (en) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 Semiconductor device
US8975634B2 (en) 2011-10-07 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film
JP6022880B2 (en) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
JP5912394B2 (en) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 Semiconductor device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP6026839B2 (en) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20130040706A (en) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
CN104025301B (en) 2011-10-14 2017-01-18 株式会社半导体能源研究所 The semiconductor device
KR20130043063A (en) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20130044150A (en) 2011-10-21 2013-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP6226518B2 (en) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
KR20130045174A (en) 2011-10-24 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130045173A (en) 2011-10-24 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6082562B2 (en) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20140086954A (en) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8604472B2 (en) 2011-11-09 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5933895B2 (en) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
JP6076038B2 (en) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 The method for manufacturing a display device
JP6122275B2 (en) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 Display device
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN103918025B (en) 2011-11-11 2016-12-21 株式会社半导体能源研究所 A signal line driving circuit and the liquid crystal display device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
JP6099368B2 (en) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 Storage device
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
JP6125211B2 (en) 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
KR20140096330A (en) 2011-11-30 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor display device
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6147992B2 (en) 2011-11-30 2017-06-14 株式会社半導体エネルギー研究所 Semiconductor device
KR20130061070A (en) 2011-11-30 2013-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8956929B2 (en) 2011-11-30 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9130048B2 (en) 2011-12-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8885437B2 (en) 2011-12-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Storage device and driving method thereof
JP6050662B2 (en) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
KR20140101817A (en) 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR20150028760A (en) 2011-12-15 2015-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2013094621A1 (en) 2011-12-20 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2013130802A (en) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device, image display device, storage device, and electronic apparatus
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6033071B2 (en) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 Semiconductor device
JP6012450B2 (en) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
US8861288B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Level-shift circuit and semiconductor integrated circuit
US8860021B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6053490B2 (en) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR20130075657A (en) 2011-12-27 2013-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8809154B2 (en) 2011-12-27 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130082068A (en) 2012-01-10 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013111757A1 (en) 2012-01-23 2013-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2013111756A1 (en) 2012-01-25 2013-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9171957B2 (en) 2012-01-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6091905B2 (en) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9304523B2 (en) 2012-01-30 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and method for driving the same
JP6068994B2 (en) 2012-02-02 2017-01-25 株式会社半導体エネルギー研究所 Semiconductor device
KR20130090338A (en) 2012-02-03 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP5981157B2 (en) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 Semiconductor device
JP6125850B2 (en) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
US9183894B2 (en) 2012-02-24 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6151530B2 (en) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 Image sensors, cameras and surveillance systems,
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6046514B2 (en) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
JP2013183001A (en) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd Semiconductor device
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
JP6100559B2 (en) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 A semiconductor memory device
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104160295B (en) 2012-03-09 2017-09-15 株式会社半导体能源研究所 The method of driving a semiconductor device
JP6168795B2 (en) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
KR20130105390A (en) 2012-03-14 2013-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, transistor, and semiconductor device
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
JP6169376B2 (en) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 Battery management unit, the protection circuit, the power storage device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
WO2013146154A1 (en) 2012-03-29 2013-10-03 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
US9235515B2 (en) 2012-03-29 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Array controller and storage system
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP6139187B2 (en) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 Semiconductor device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
JP5975907B2 (en) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6059566B2 (en) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2013154195A1 (en) 2012-04-13 2013-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6128906B2 (en) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6143423B2 (en) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 A method of manufacturing a semiconductor device
JP6001308B2 (en) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 Semiconductor device
JP6076612B2 (en) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 Semiconductor device
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
JP6199583B2 (en) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 Semiconductor device
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6100071B2 (en) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP6228381B2 (en) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
JP6035195B2 (en) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112013002281T5 (en) 2012-05-02 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. A programmable logic device
JP6227890B2 (en) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 Control circuits,
KR20130123315A (en) 2012-05-02 2013-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Temperature sensor circuit and semiconductor device including temperature sensor circuit
US9261943B2 (en) 2012-05-02 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6243136B2 (en) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 Switching Converters
JP6100076B2 (en) 2012-05-02 2017-03-22 株式会社半導体エネルギー研究所 Processor
KR20130125717A (en) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
DE112013002407T5 (en) 2012-05-10 2015-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013168624A1 (en) 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130126479A (en) 2012-05-10 2013-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
DE102013207324A1 (en) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20130126494A (en) 2012-05-11 2013-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
JP5931583B2 (en) * 2012-05-18 2016-06-08 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP5674707B2 (en) 2012-05-22 2015-02-25 株式会社東芝 Display device
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
US9479152B2 (en) 2012-05-25 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
JP6250955B2 (en) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
KR20130132271A (en) 2012-05-25 2013-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving memory element
KR20150021021A (en) 2012-05-25 2015-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device and semiconductor device
JP6050721B2 (en) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP2014007737A (en) 2012-05-30 2014-01-16 Semiconductor Energy Lab Co Ltd Programmable logic device
KR20150027123A (en) 2012-05-31 2015-03-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6158588B2 (en) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 The light-emitting device
JP6208469B2 (en) 2012-05-31 2017-10-04 株式会社半導体エネルギー研究所 Semiconductor device
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
CN104380473B (en) 2012-05-31 2017-10-13 株式会社半导体能源研究所 The semiconductor device
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
JP6108960B2 (en) 2012-06-01 2017-04-05 株式会社半導体エネルギー研究所 Semiconductor device, the processing device
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
KR20150023547A (en) 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and alarm device
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20140002500A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR20140002497A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of driving display device, and display device
KR20140002496A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR20140008247A (en) 2012-07-11 2014-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
US9449569B2 (en) 2012-07-13 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving liquid crystal display device
JP6006558B2 (en) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
WO2014013958A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2014013959A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6185311B2 (en) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 Power supply control circuit, and a signal processing circuit
CN104488016A (en) 2012-07-20 2015-04-01 株式会社半导体能源研究所 Display device and electronic device including the display device
JP2014042004A (en) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
KR20140013931A (en) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
JP6224931B2 (en) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP6134598B2 (en) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 Semiconductor device
US8981376B2 (en) 2012-08-02 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150038279A (en) 2012-08-03 2015-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor stacked film and semiconductor device
KR20150040873A (en) 2012-08-03 2015-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20150043361A (en) 2012-08-10 2015-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP6220597B2 (en) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
KR20140020757A (en) 2012-08-10 2014-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving semiconductor device
KR20140020749A (en) 2012-08-10 2014-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8878574B2 (en) 2012-08-10 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
CN104584229A (en) 2012-08-10 2015-04-29 株式会社半导体能源研究所 Semiconductor device and method for fabricating the same
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8975930B2 (en) 2012-08-10 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US9246047B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR20140026255A (en) 2012-08-24 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Radiation detection panel, radiation imaging device, and diagnostic imaging device
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR20140029181A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
KR20140029202A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
DE102013216824A1 (en) 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140030049A (en) 2012-08-31 2014-03-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20150052154A (en) 2012-09-03 2015-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Microcontroller
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE102013217278B4 (en) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetector circuit, imaging device and method for driving a photo detector circuit
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
CN104620390A (en) 2012-09-13 2015-05-13 株式会社半导体能源研究所 The semiconductor device
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR20140035822A (en) 2012-09-14 2014-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for fabricating the same
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
CN104662668A (en) 2012-09-24 2015-05-27 株式会社半导体能源研究所 The semiconductor device
JP5779161B2 (en) 2012-09-26 2015-09-16 株式会社東芝 Thin film transistor and a display device
US9853164B2 (en) 2012-10-03 2017-12-26 Sharp Kabushiki Kaisha Semiconductor device and display device
JP6290576B2 (en) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 The liquid crystal display device and a driving method thereof
US9366896B2 (en) 2012-10-12 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and touch panel
KR20140047529A (en) 2012-10-12 2014-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
JP6059501B2 (en) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP6283191B2 (en) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6021586B2 (en) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device
KR20150066533A (en) 2012-10-17 2015-06-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20150067379A (en) 2012-10-17 2015-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6158674B2 (en) 2012-10-17 2017-07-05 株式会社半導体エネルギー研究所 The driving method of a programmable logic device
JP5951442B2 (en) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 Semiconductor device
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140049476A (en) 2012-10-17 2014-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
DE112013005029T5 (en) 2012-10-17 2015-07-30 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and manufacturing method thereof
JP6284710B2 (en) * 2012-10-18 2018-02-28 出光興産株式会社 Sputtering target, the oxide semiconductor thin film and a process for their preparation
KR20140050542A (en) 2012-10-19 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
JP6204145B2 (en) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 Semiconductor device
KR20140052870A (en) 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6300489B2 (en) 2012-10-24 2018-03-28 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US9865743B2 (en) 2012-10-24 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide layer surrounding oxide semiconductor layer
KR20140052869A (en) 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (en) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 Display device and electronic equipment
CN104769842B (en) 2012-11-06 2017-10-31 株式会社半导体能源研究所 The semiconductor device and a driving method thereof
WO2014073585A1 (en) 2012-11-08 2014-05-15 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
US8901558B2 (en) 2012-11-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having multiple gates
JP6220641B2 (en) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
WO2014077207A1 (en) 2012-11-15 2014-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6285150B2 (en) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 Semiconductor device
US9087726B2 (en) 2012-11-16 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349750B2 (en) 2012-11-16 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8921853B2 (en) 2012-11-16 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having oxide semiconductor layer
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US9130367B2 (en) 2012-11-28 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Display device
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9324737B2 (en) 2012-11-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9324810B2 (en) 2012-11-30 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014084152A1 (en) 2012-11-30 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014130336A (en) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd Display device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
KR20140071234A (en) 2012-12-03 2014-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9406810B2 (en) 2012-12-03 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20140073427A (en) 2012-12-06 2014-06-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
US9391620B2 (en) 2012-12-24 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
CN104885230B (en) 2012-12-25 2018-02-23 株式会社半导体能源研究所 The semiconductor device
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014104267A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343578B2 (en) 2012-12-28 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and measurement device
US9196639B2 (en) 2012-12-28 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
CN104904018A (en) 2012-12-28 2015-09-09 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
US9293598B2 (en) 2012-12-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor layer
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9768314B2 (en) 2013-01-21 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5807076B2 (en) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 Semiconductor device
JP6223198B2 (en) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140101681A (en) 2013-02-12 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20140101688A (en) 2013-02-12 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150119862A (en) 2013-02-13 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device and semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150122166A (en) 2013-02-25 2015-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
US9341722B2 (en) 2013-02-27 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9337343B2 (en) 2013-02-27 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver circuit, and display device
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014195243A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6141777B2 (en) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP2014195241A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2014195060A (en) 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd Sensor circuit and semiconductor device using sensor circuit
JP6250883B2 (en) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 Semiconductor device
KR20140109817A (en) 2013-03-06 2014-09-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor film and semiconductor device
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9705001B2 (en) 2013-03-13 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014199709A (en) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 Memory device and semiconductor device
JP6283237B2 (en) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
WO2014142043A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
KR20140113354A (en) 2013-03-14 2014-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP6298662B2 (en) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2014142332A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9245650B2 (en) 2013-03-15 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6093726B2 (en) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
JP2014209593A (en) 2013-03-22 2014-11-06 株式会社半導体エネルギー研究所 Method of processing thin film, and method of manufacturing semiconductor device
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6272713B2 (en) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 Programmable logic device and semiconductor device
US9153313B2 (en) 2013-03-26 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Normally-off, power-gated memory circuit with two data retention stages for reducing overhead power
US9496409B2 (en) 2013-03-26 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9608122B2 (en) 2013-03-27 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9640104B2 (en) 2013-03-28 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (en) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6224338B2 (en) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device, a display device and a semiconductor device
JP6198434B2 (en) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 Display device and electronic equipment
US9627545B2 (en) 2013-04-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6280794B2 (en) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 The semiconductor device and a driving method thereof
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8975695B2 (en) 2013-04-19 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device
DE112014002034T5 (en) 2013-04-19 2016-01-07 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9450102B2 (en) 2013-04-26 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20160003025A (en) 2013-04-29 2016-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2014178335A1 (en) 2013-05-01 2014-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140131264A (en) 2013-05-02 2014-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2014181785A1 (en) 2013-05-09 2014-11-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
US9094007B2 (en) 2013-05-14 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014185480A1 (en) 2013-05-16 2014-11-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9312269B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9437741B2 (en) 2013-05-16 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
JP6298353B2 (en) 2013-05-17 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE102014208859A1 (en) 2013-05-20 2014-11-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20160009552A (en) 2013-05-20 2016-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20160012156A (en) 2013-05-20 2016-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140136385A (en) 2013-05-20 2014-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20160009626A (en) 2013-05-21 2016-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and formation method thereof
US9166060B2 (en) 2013-06-05 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014196550A1 (en) 2013-06-05 2014-12-11 Semiconductor Energy Laboratory Co., Ltd. Sequential circuit and semiconductor device
US9306074B2 (en) 2013-06-05 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9806198B2 (en) 2013-06-05 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9899420B2 (en) 2013-06-05 2018-02-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20140145547A (en) 2013-06-13 2014-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2015027080A (en) 2013-06-18 2015-02-05 株式会社半導体エネルギー研究所 Programmable logic device
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9287352B2 (en) 2013-06-19 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and formation method thereof
KR20140148311A (en) 2013-06-21 2014-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9515094B2 (en) 2013-06-26 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
JP2015029261A (en) 2013-07-05 2015-02-12 株式会社半導体エネルギー研究所 Semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9424950B2 (en) 2013-07-10 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6018607B2 (en) 2013-07-12 2016-11-02 株式会社半導体エネルギー研究所 Semiconductor device
US9818763B2 (en) 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
JP2015038974A (en) 2013-07-16 2015-02-26 株式会社半導体エネルギー研究所 Semiconductor device
US9305630B2 (en) 2013-07-17 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9443592B2 (en) 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9583632B2 (en) 2013-07-19 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, method for forming oxide semiconductor film, and semiconductor device
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
KR20150013031A (en) 2013-07-25 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR20150013025A (en) 2013-07-25 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device
KR20150013030A (en) 2013-07-26 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Dcdc converter
US9130047B2 (en) 2013-07-31 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9412762B2 (en) 2013-07-31 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter and semiconductor device
US9190448B2 (en) 2013-08-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device and operation method thereof
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9741794B2 (en) 2013-08-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9634149B2 (en) 2013-08-07 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20150018395A (en) 2013-08-09 2015-02-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2015062218A (en) 2013-08-19 2015-04-02 株式会社半導体エネルギー研究所 Semiconductor device
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
US9385592B2 (en) 2013-08-21 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Charge pump circuit and semiconductor device including the same
KR20150022671A (en) 2013-08-22 2015-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2015109414A (en) 2013-08-30 2015-06-11 株式会社半導体エネルギー研究所 Display device
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9570622B2 (en) 2013-09-05 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150028721A (en) 2013-09-06 2015-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2015073090A (en) 2013-09-06 2015-04-16 株式会社半導体エネルギー研究所 Semiconductor device and semiconductor device manufacturing method
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN105531621A (en) 2013-09-13 2016-04-27 株式会社半导体能源研究所 The display device
US9716003B2 (en) 2013-09-13 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9805952B2 (en) 2013-09-13 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
US9406761B2 (en) 2013-09-13 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9887297B2 (en) 2013-09-17 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US9859439B2 (en) 2013-09-18 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2015060996A (en) 2013-09-19 2015-03-30 株式会社東芝 Display device and semiconductor device
US9443934B2 (en) 2013-09-19 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9397153B2 (en) 2013-09-23 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6190228B2 (en) 2013-09-24 2017-08-30 株式会社東芝 The semiconductor device and the imaging apparatus
JP2015065202A (en) 2013-09-24 2015-04-09 株式会社東芝 Semiconductor element, display device, method of manufacturing semiconductor element, and method of manufacturing display device
US9905586B2 (en) 2013-09-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Capacitor comprising metal oxide film having high alignment
KR20160061377A (en) 2013-09-26 2016-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Switch circuit, semiconductor device, and system
KR20150035408A (en) 2013-09-27 2015-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and analog/digital converter circuit including the semiconductor device
JP2015092659A (en) 2013-10-02 2015-05-14 株式会社半導体エネルギー研究所 Bootstrap circuit, and semiconductor device having bootstrap circuit
US9812585B2 (en) 2013-10-04 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015053378A1 (en) 2013-10-10 2015-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150042712A (en) 2013-10-11 2015-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
KR20150044398A (en) 2013-10-16 2015-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving arithmetic processing unit
KR20150045367A (en) 2013-10-18 2015-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Arithmetic processing unit and driving method thereof
KR20150045365A (en) 2013-10-18 2015-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
DE112014004839T5 (en) 2013-10-22 2016-07-07 Semiconductor Energy Laboratory Co., Ltd. display device
JP2015109424A (en) 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 Semiconductor device, method for manufacturing semiconductor device and etchant used for semiconductor device
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
KR20160072110A (en) 2013-10-22 2016-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
DE102014220672A1 (en) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105659369A (en) 2013-10-22 2016-06-08 株式会社半导体能源研究所 Semiconductor device and manufacturing method of the same
US9583516B2 (en) 2013-10-25 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Display device
US9870816B2 (en) 2013-10-31 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9419143B2 (en) 2013-11-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
US9755648B2 (en) 2013-11-22 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015122056A (en) 2013-11-22 2015-07-02 株式会社半導体エネルギー研究所 Semiconductor device
KR20150061578A (en) 2013-11-27 2015-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9437428B2 (en) 2013-11-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20160106224A (en) 2013-12-02 2016-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and method for manufacturing the same
CN105874524A (en) 2013-12-02 2016-08-17 株式会社半导体能源研究所 Display device
US9601634B2 (en) 2013-12-02 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6238712B2 (en) 2013-12-05 2017-11-29 三菱電機株式会社 A thin film transistor substrate and a method of manufacturing the same
US9923097B2 (en) 2013-12-06 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9209203B2 (en) 2013-12-11 2015-12-08 Mitsubishi Electric Corporation Active matrix substrate and method for manufacturing the same
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9627413B2 (en) 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
DE102014225301A1 (en) 2013-12-18 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150072345A (en) 2013-12-19 2015-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9450080B2 (en) 2013-12-20 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20160098497A (en) 2013-12-25 2016-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9935617B2 (en) 2013-12-26 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097589A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097633A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2015097597A1 (en) 2013-12-27 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9472678B2 (en) 2013-12-27 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105849796A (en) 2013-12-27 2016-08-10 株式会社半导体能源研究所 Light-emitting device
KR20160102236A (en) 2013-12-27 2016-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9804462B2 (en) 2013-12-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising transistor using oxide semiconductor
WO2015104621A1 (en) 2014-01-09 2015-07-16 Semiconductor Energy Laboratory Co., Ltd. Device
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR20150092707A (en) 2014-02-05 2015-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, module, and electronic device
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9653487B2 (en) 2014-02-05 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, module, and electronic device
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9721968B2 (en) 2014-02-06 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic appliance
JP2015165226A (en) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 Device
JP2015165559A (en) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 Device
US9412876B2 (en) 2014-02-07 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9479175B2 (en) 2014-02-07 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20160119798A (en) 2014-02-11 2016-10-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
KR20160120741A (en) 2014-02-19 2016-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide, semiconductor devices, modules, and the electronic device
JP2015172991A (en) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 Semiconductor device, electronic component, and electronic device
US9817040B2 (en) 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
CN104867981A (en) 2014-02-21 2015-08-26 株式会社半导体能源研究所 Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
CN106104772A (en) 2014-02-28 2016-11-09 株式会社半导体能源研究所 Semiconductor device and display device including the semiconductor device
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9455709B2 (en) 2014-03-05 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150104518A (en) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Level shifter circuit
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9350358B2 (en) 2014-03-06 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150105214A (en) 2014-03-07 2015-09-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP2015181078A (en) 2014-03-07 2015-10-15 株式会社半導体エネルギー研究所 Semiconductor device, driving method therefor, and electronic apparatus
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653611B2 (en) 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9634150B2 (en) 2014-03-07 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, input/output device, and electronic device
US9443872B2 (en) 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015136413A1 (en) 2014-03-12 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20160133512A (en) 2014-03-13 2016-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging device