KR20140067243A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
KR20140067243A
KR20140067243A KR1020120134242A KR20120134242A KR20140067243A KR 20140067243 A KR20140067243 A KR 20140067243A KR 1020120134242 A KR1020120134242 A KR 1020120134242A KR 20120134242 A KR20120134242 A KR 20120134242A KR 20140067243 A KR20140067243 A KR 20140067243A
Authority
KR
South Korea
Prior art keywords
layer
light emitting
semiconductor layer
emitting device
type semiconductor
Prior art date
Application number
KR1020120134242A
Other languages
Korean (ko)
Inventor
김병조
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120134242A priority Critical patent/KR20140067243A/en
Publication of KR20140067243A publication Critical patent/KR20140067243A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

According to an embodiment, a light emitting device comprises a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a first electrode positioned on the first conductivity-type semiconductor layer exposed as a portion of the light emitting structures is etched; and a second electrode positioned on the second conductivity-type semiconductor layer, wherein the first conductivity-type semiconductor layer includes insertion layers including a first layer containing an Inx1Aly1Ga1-x1-y1N (0<=x1<x1<y1<1) material and a second layer containing an Inx2Ga1-x2N (0<x2<1) material, and a difference in lattice constant between the first layer and the second layer ranges from 0.12% to 1.83%.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

BACKGROUND ART Light emitting devices such as light emitting diodes and laser diodes using semiconductor materials of Group 3-5 or 2-6 group semiconductors have been widely used for various colors such as red, green, blue, and ultraviolet And it is possible to realize white light rays with high efficiency by using fluorescent materials or colors, and it is possible to realize low energy consumption, semi-permanent life time, quick response speed, safety and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

In the case of a horizontal type light emitting device, a light emitting structure including an n-GaN layer, an active layer and a p-GaN layer is stacked on a sapphire substrate. In the characteristics of a horizontal light emitting device, n- There is a problem that the diffusion resistance is large.

In the embodiment, current spreading is smoothly performed in the first conductivity type semiconductor layer to improve the luminous efficiency of the light emitting device.

A light emitting device according to an embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A first electrode positioned on the exposed first conductive semiconductor layer of the light emitting structure; The including, and the first conductive type semiconductor layer is In x1 Al y1 Ga 1 -x1- y1 N (0≤x1 <y1 <1) material; and the second conductive type second electrode disposed on the semiconductor layer And a second layer comprising an In x 2 Ga 1 -x 2 N (0 < x 2 < 1) material, wherein the first layer and the second layer have a difference in lattice constant Is from 0.12% to 1.83%.

The insertion layer may be located above the exposed surface of the first conductive type semiconductor layer.

The first layer may have a thickness of 10 nm to 100 nm.

The second layer may have a thickness of 2 nm to 100 nm.

The content of In in the first layer may satisfy the following condition: x1 is 0? X1? 0.03, and Al1 is y1 is 0.05? Y1? 0.3.

The content of In in the second layer may satisfy a range of 0.03? X2? 0.1.

The first conductive semiconductor layer may include a contact layer having an exposed surface on which the first electrode is located, and the insulative layer may be on one side of the contact layer or on top of the contact layer.

The second layer may form a two-dimensional electron gas (2DEG) layer at an interface with the first layer.

The second conductive semiconductor layer may include an electron blocking layer disposed adjacent to the active layer.

The energy band gap of the first layer may be greater than the energy band gap of the second layer.

According to the embodiment, the current spreading in the first conductivity type semiconductor layer can be facilitated and the luminous efficiency of the light emitting device can be improved.

1 is a side cross-sectional view of a light emitting device according to an embodiment.
2 is an enlarged view of only an insertion layer;
3 is a view for explaining a state of an interface between a first layer and a second layer of an insertion layer;
FIGS. 4 and 5 are views schematically showing one embodiment of a manufacturing process of a light emitting device. FIG.
6 is a view illustrating an embodiment of a light emitting device package including a light emitting device according to embodiments.
FIG. 7 illustrates an embodiment of a headlamp in which a light emitting device or a light emitting device package according to embodiments is disposed. FIG.
8 is a view illustrating a display device in which a light emitting device package according to an embodiment is disposed.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1 is a side sectional view of a light emitting device according to an embodiment.

1, a light emitting device 100 according to an embodiment includes a light emitting structure including a first conductive semiconductor layer 120, an active layer 130, and a second conductive semiconductor layer 140, A first electrode 150 positioned on the first conductive type semiconductor layer 120 exposed partly by etching and a second electrode 160 positioned on the second conductive type semiconductor layer 140.

The light emitting device 100 includes an LED (Light Emitting Diode) using a semiconductor layer of a plurality of compound semiconductor layers, for example, a group III-V element, and the LED is a coloring material that emits light such as blue, green, LED, white LED or UV LED. The emitted light of the LED may be implemented using various semiconductors, but is not limited thereto.

The light-emitting structure may be formed using, for example, a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma enhanced chemical vapor deposition (PECVD) (Molecular Beam Epitaxy), hydride vapor phase epitaxy (HVPE), and the like, but the present invention is not limited thereto.

The first conductive semiconductor layer 120 may be formed of a semiconductor compound, for example, a compound semiconductor such as a group III-V element or a group II-VI element. The first conductive type dopant may also be doped. When the first conductivity type semiconductor layer 120 is an n-type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, Te and the like as the n-type dopant, but is not limited thereto. When the first conductive semiconductor layer 120 is a p-type semiconductor layer, the first conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant, but is not limited thereto.

The first conductive semiconductor layer 120 includes a semiconductor material having a composition formula of Al x In y Ga (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1) can do. The first conductive semiconductor layer 120 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The second conductive semiconductor layer 140 may be formed of a semiconductor compound, for example, a compound semiconductor such as a Group III-V element or a Group II-VI element. The second conductivity type dopant may also be doped. The second conductivity type semiconductor layer 140 has a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) Semiconductor material. When the second conductive semiconductor layer 140 is a p-type semiconductor layer, the second conductive dopant may include, but not limited to, Mg, Zn, Ca, Sr, and Ba as a p-type dopant. When the second conductivity type semiconductor layer 140 is an n-type semiconductor layer, the second conductivity type dopant may include Si, Ge, Sn, Se, Te, or the like as an n-type dopant.

Hereinafter, the case where the first conductivity type semiconductor layer 120 is an n-type semiconductor layer and the second conductivity type semiconductor layer 140 is a p-type semiconductor layer will be described as an example.

An n-type semiconductor layer (not shown) may be formed on the second conductive semiconductor layer 140 when the semiconductor having the opposite polarity to the second conductive type, for example, the second conductive semiconductor layer 140 is a p- . Accordingly, the light emitting structure may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The active layer 130 is positioned between the first conductive semiconductor layer 120 and the second conductive semiconductor layer 140.

The active layer 130 is a layer in which electrons and holes meet each other to emit light having an energy determined by an energy band inherent in an active layer (light emitting layer) material. When the first conductive semiconductor layer 120 is an n-type semiconductor layer and the second conductive semiconductor layer 140 is a p-type semiconductor layer, electrons are injected from the first conductive semiconductor layer 120, Holes can be injected from the conductive type semiconductor layer 140. [

The active layer 130 may be formed of at least one of a single well structure, a multi-well structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 130 may be formed of a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) But is not limited thereto.

The second conductive semiconductor layer 140 may include an electron blocking layer (EBL) located adjacent to the active layer 130. The electron blocking layer (not shown) has a high mobility of electrons provided in the first conductivity type semiconductor layer 120, so electrons can not contribute to light emission, and the second conductivity type semiconductor layer And serves as a potential barrier to prevent the leakage current from flowing out to the gate electrode 140. The electron blocking layer is formed of a material having an energy band gap larger than that of the active layer 130, and may have a composition of In x Al y Ga 1 -xy N (0? X <y <1).

InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP / GaN) ) / AlGaP, but the present invention is not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A first conductive type semiconductor layer 120 is In x1 Al y1 Ga 1 -x1- y1 N (0≤x1 <y1 <1) the first layer (121) and In x2 Ga 1 -x2 containing the substance N (0 < x2 < 1) material.

The embedded layer 123 allows the electrons provided by the first electrode 150 to be evenly spread in the first conductive semiconductor layer 120. That is, the insertion layer 123 may serve as a current spreading layer in the first conductivity type semiconductor layer 120.

Fig. 2 is an enlarged view of only the insertion layer, and Fig. 3 is a view for explaining the state of the interface between the first layer and the second layer of the insertion layer.

The insertion layer 123 is formed of a first layer 121 including In x1 Al y1 Ga 1 -x1 -y1 N (0? X1 <y1 <1) material and a first layer 121 including In x2 Ga 1-x2 N ) Material. &Lt; / RTI &gt; The first layer 121 may be made of a material having an energy band gap larger than the energy band gap of the second layer 122. The first layer 121 may be made of a material having a lattice constant that is less than the lattice constant of the second layer 122. The second layer 122 forms a two-dimensional electron gas (2DEG) layer 123a at the interface with the first layer 121. [

3, the banding of the energy band occurs due to the polarization difference due to the difference in lattice constant between the first layer 121 and the second layer 122, and the first layer 121 and the second layer 122, Electrons are gathered at the interface of the second layer 122 in contact with the first layer 121 to form a two-dimensional electron gas (2DEG) layer 123a by the discontinuity of the energy band due to the difference in the energy band gap of the first layer 121. [

The electrons supplied from the first electrode 150 are uniformly distributed on the entire surface of the first conductivity type semiconductor layer 120 by the two-dimensional electron gas (2DEG) layer 123a and are provided to the active layer 130, The luminous efficiency due to the recombination of electrons and holes can be improved.

The difference between the lattice constants of the first layer 121 and the second layer 122 may be 0.12% to 1.83%. That is, the lattice constant of the second layer 122 may be larger than the lattice constant of the first layer 121 by 0.12% to 1.83%. If the difference between the lattice constants of the first layer 121 and the second layer 122 is too large, the difference in the lattice constant mismatch and the energy band gap is too large to deteriorate the crystalline quality, If the difference between the lattice constants of the two layers 122 is too small, the two-dimensional electron gas (2DEG) layer 123a can not be efficiently formed and the effect of current spreading may be insufficient.

The first layer 121 may have a content x1 of In satisfying the range of 0? X1? 0.03 and a content y1 of Al satisfying the range of 0.05? Y1? 0.3. The content of In in the second layer 122 may satisfy the range of 0.03? X2? 0.1. The In content x1 and the Al content y1 of the first layer 121 and the In content x2 of the second layer 122 are adjusted in view of the crystalline quality and the formation aspect of the two-dimensional electron gas (2DEG) layer 123a .

Table 1 below shows the lattice constants for each compound.

AlN GaN InN Lattice constant (A) a = 3.112 a = 3.189 a = 3.547

Referring to Table 1, the lattice constant of the a-axis (c-plane direction) of AlN is 3.112A, the lattice constant of the a-axis (c-plane direction) of GaN is 3.189A and the lattice constant of the a- Lt; / RTI &gt;

As an example, when the first layer 121 is made of In x 1 Al y 1 Ga 1 -x1- y1 N material and the In content x1 is 0.03 and the Al content y1 is 0.05, the lattice constant of the first layer 121 is As follows.

(0.03 x 3.547) + (0.05 x 3.112) + (0.92 x 3.189) = 3.196

As an example, when the second layer 122 is made of In x 2 Ga 1 -x 2 N material and the In content x 2 is 0.03, the lattice constant of the second layer 122 is as follows.

(0.03 x 3.547) + (0.97 x 3.819) = 3.200

An effective carrier density is applied to the interface of the second layer 122 in contact with the first layer 121 when the lattice constant of the first layer 121 is 3.196 angstroms and the lattice constant of the second layer 122 is 3.200 angstroms. Dimensional electron gas (2DEG) layer 123a can be formed, which can maximize the Density.

As an example, when the first layer 121 is made of an Al y1 Ga 1 -x1- y1 N material and the Al content y1 is 0.3, the lattice constant of the first layer 121 is as follows.

(0.3 x 3.112) + (0.7 x 3.189) = 3.166

As an example, when the second layer 121 is made of In x 2 Ga 1 -x 2 N material and the In content x 2 is 0.1, the lattice constant of the second layer 122 is as follows.

(0.1 x 3.547) + (0.9 x 3.189) = 3.225

An effective carrier density is applied to the interface of the second layer 122 in contact with the first layer 121 when the lattice constant of the first layer 121 is 3.166 angstroms and the lattice constant of the second layer 122 is 3.225 angstroms. Dimensional electron gas (2DEG) layer 123a capable of ensuring the minimum density of the electron gas (2DEG) can be formed.

The thickness d 1 of the first layer 121 may be between 10 nm and 100 nm and the thickness d 2 of the second layer 122 may be between 2 nm and 100 nm. The thicknesses of the first layer 121 and the second layer 122 can be adjusted in consideration of the difference in lattice constant and the crystallinity.

Referring again to FIG. 1, the insulator layer 123 may be located above the exposed surface S of the exposed first conductivity type semiconductor layer 120. The electrons supplied from the first electrode 150 are uniformly spread in the interlayer 123 by the insertion layer 123 located above the exposed surface S of the first conductive semiconductor layer 120, 130).

A layer in contact with the first electrode 150 of the first conductivity type semiconductor layer 120 may be referred to as a contact layer 124. That is, the contact layer 124 may have a surface including the exposed surface S where the first electrode 150 is located, and a surface including the same surface as the exposed surface S. The insertion layer 123 may be located on one side of the contact layer 124 or on the contact layer 124 and spaced apart from the contact layer 124.

The light emitting structure including the first conductive semiconductor layer 120, the active layer 130, and the second conductive semiconductor layer 140 is located on the substrate 110.

The substrate 110 may be formed of a material having excellent thermal conductivity, which is suitable for semiconductor material growth. At least one of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga 2 O 3 may be used as the substrate 110. The substrate 110 may be wet-cleaned to remove impurities on the surface.

A buffer layer 115 may be positioned between the light emitting structure 120 and the substrate 110. The buffer layer 115 is intended to alleviate the difference in lattice mismatch and thermal expansion coefficient between the materials of the light emitting structure 120 and the substrate 110. The material of the buffer layer 115 may be at least one of Group III-V compound semiconductors such as GaN, InN, AlN, InGaN, InAlGaN, and AlInN.

An undoped semiconductor layer (not shown) may be disposed between the substrate 110 and the first conductivity type semiconductor layer 120. The un-doped semiconductor layer is a layer formed for improving the crystallinity of the first conductivity type semiconductor layer 120, and has a lower electrical conductivity than that of the first conductivity type semiconductor layer without being doped with an n-type dopant. May be the same as the first conductive semiconductor layer 120.

The first electrode 150 and the second electrode 160 may be formed of at least one selected from the group consisting of Mo, Cr, Ni, Au, Al, Ti, Pt, Layer structure including at least one of tungsten (V), tungsten (W), lead (Pd), copper (Cu), rhodium (Rh) or iridium (Ir).

A conductive layer 165 may be formed on the second conductive semiconductor layer 140 before the second electrode 160 is formed.

A part of the conductive layer 165 may be opened to expose the second conductive semiconductor layer 140 so that the second conductive semiconductor layer 140 and the second electrode 160 may be in contact with each other.

Alternatively, as shown in FIG. 1, the second conductive semiconductor layer 140 and the second electrode 160 may be electrically connected to each other with the conductive layer 165 interposed therebetween.

The conductive layer 165 is formed to improve the electrical characteristics of the second conductivity type semiconductor layer 140 and improve electrical contact with the second electrode 160, and may be formed in a layer or a plurality of patterns. The conductive layer 165 may be formed of a transparent electrode layer having transparency.

The conductive layer 165 may be formed of a transparent conductive layer and a metal. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO ), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON TiO 2, Ag, Ni, Cr, Ti, Al, Rh, ZnO, IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf.

FIGS. 4 and 5 are views schematically showing an embodiment of a manufacturing process of a light emitting device.

First, referring to FIG. 4, a buffer layer 115 is formed on the substrate 110 to mitigate lattice mismatch. The buffer layer 115 may be grown at a lower temperature than the light emitting structure to be grown later.

The buffer layer 115 is grown and then the first conductivity type semiconductor layer 120 is grown.

The first conductive semiconductor layer 120 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) ), Molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE), but the present invention is not limited thereto.

The first conductive semiconductor layer 120 is formed of a plurality of layers and the second layer 122 and the first layer 121 are successively grown to grow the first material layer 120-1, 123 are formed. The second layer 122 is made of a material having a smaller energy bandgap than the first layer 121 and is formed by lattice constant mismatching of the second layer 122 and the first layer 121 and discontinuity of the energy band, A two-dimensional electron gas (2DEG) layer is naturally formed at the interface of the second layer 122 in contact with the layer 121.

After the interlayer 123 is formed, a second material layer 120-2 is formed using the same material or another material as the first material layer 120-1 to form the first conductive semiconductor layer 120 ) Can be completed.

5, the active layer 130 and the second conductivity type semiconductor layer 140 are grown on the first conductivity type semiconductor layer 120. Referring to FIG. The active layer 130 may be grown in a multi-well structure in which a barrier layer and a well layer are alternately stacked and grown at a temperature lower than that of the second conductivity type semiconductor layer 140.

After the growth of the light emitting structure is completed, a part of the light emitting structure is etched to expose the first conductivity type semiconductor layer 120. At this time, the etching depth may start from the second conductive semiconductor layer 140 to at least the insertion layer 123 of the first conductive semiconductor layer 120.

The first electrode 150 and the second electrode 160 are formed after etching the light emitting structure, thereby manufacturing the light emitting device 100 as shown in FIG.

The fabrication process of the above-described light emitting device is merely an example, and the order and method of the specific fabrication process may be changed according to the embodiment.

6 is a view illustrating an embodiment of a light emitting device package including the light emitting device according to the embodiments.

The light emitting device package 300 according to an exemplary embodiment includes a body 310, a first lead frame 321 and a second lead frame 322 disposed on the body 310, Emitting device 100 according to the above-described embodiments electrically connected to the first lead frame 321 and the second lead frame 322, and a molding part 340 formed in the cavity. A cavity may be formed in the body 310.

The body 310 may include a silicon material, a synthetic resin material, or a metal material. When the body 310 is made of a conductive material such as a metal material, an insulating layer is coated on the surface of the body 310 to prevent an electrical short between the first and second lead frames 321 and 322 .

The first lead frame 321 and the second lead frame 322 are electrically separated from each other and supply current to the light emitting device 100. The first lead frame 321 and the second lead frame 322 may increase the light efficiency by reflecting the light generated from the light emitting device 100. The heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 310 or may be disposed on the first lead frame 321 or the second lead frame 322. The first lead frame 321 and the light emitting element 100 are directly energized and the second lead frame 322 and the light emitting element 100 are connected to each other through the wire 330 in this embodiment. The light emitting device 100 may be connected to the lead frames 321 and 322 by a flip chip method or a die bonding method in addition to the wire bonding method.

The molding part 340 may surround and protect the light emitting device 100. In addition, the phosphor 350 may be included on the molding part 340 to change the wavelength of light emitted from the light emitting device 100.

The phosphor 350 may include a garnet-based phosphor, a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor.

For example, the garnet-base phosphor is YAG (Y 3 Al 5 O 12 : Ce 3 +) or TAG: may be a (Tb 3 Al 5 O 12 Ce 3 +), wherein the silicate-based phosphor is (Sr, Ba, Mg, Ca) 2 SiO 4 : Eu 2 + , and the nitride phosphor may be CaAlSiN 3 : Eu 2 + containing SiN, and the oxynitride phosphor may be Si 6 - x Al x O x N 8 -x: Eu 2 + (0 <x <6) can be.

The light of the first wavelength range emitted from the light emitting device 100 is excited by the phosphor 350 to be converted into the light of the second wavelength range and the light of the second wavelength range passes through the lens (not shown) The light path can be changed.

A plurality of light emitting device packages according to embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment may be implemented as a display device, an indicating device, a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a streetlight .

Hereinafter, the headlamp and the backlight unit will be described as an embodiment of the lighting system in which the above-described light emitting device or the light emitting device package is disposed.

FIG. 7 is a view illustrating an embodiment of a headlamp in which a light emitting device or a light emitting device package according to embodiments is disposed.

7, the light emitted from the light emitting module 710 having the light emitting device or the light emitting device package according to the embodiments is reflected by the reflector 720 and the shade 730 and then transmitted through the lens 740 It can be directed toward the front of the vehicle body.

The light emitting module 710 may include a plurality of light emitting devices on a circuit board, but the present invention is not limited thereto.

FIG. 8 is a diagram illustrating a display device in which a light emitting device package according to an embodiment is disposed.

8, the display device 800 according to the embodiment includes a light emitting module 830 and 835, a reflection plate 820 on the bottom cover 810, and a reflection plate 820 disposed in front of the reflection plate 820, A first prism sheet 850 and a second prism sheet 860 disposed in front of the light guide plate 840 and a second prism sheet 860 disposed in front of the light guide plate 840, A panel 870 disposed in front of the panel 870 and a color filter 880 disposed in the front of the panel 870.

The light emitting module includes the above-described light emitting device package 835 on the circuit board 830. Here, the circuit board 830 may be a PCB or the like, and the light emitting device package 835 is the same as that described with reference to FIG.

The bottom cover 810 may house the components in the display device 800. The reflection plate 820 may be formed as a separate component as shown in the drawing, or may be formed to be coated on the rear surface of the light guide plate 840 or on the front surface of the bottom cover 810 with a highly reflective material Do.

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 840 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance. The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). An air guide system is also available in which the light guide plate is omitted and light is transmitted in a space above the reflective sheet 820.

The first prism sheet 850 is formed on one side of the support film with a transparent and elastic polymeric material, and the polymer may have a prism layer in which a plurality of steric structures are repeatedly formed. As shown in the drawings, the plurality of patterns may be repeatedly provided with a stripe pattern.

In the second prism sheet 860, the edges and the valleys on one surface of the support film may be perpendicular to the edges and the valleys on one surface of the support film in the first prism sheet 850. This is to uniformly distribute the light transmitted from the light emitting module and the reflective sheet in all directions of the panel 870.

In the present embodiment, the first prism sheet 850 and the second prism sheet 860 form an optical sheet, which may be formed of other combinations, for example, a microlens array or a diffusion sheet and a microlens array Or a combination of one prism sheet and a microlens array, or the like.

A liquid crystal display (LCD) panel may be disposed on the panel 870. In addition to the liquid crystal display panel 860, other types of display devices requiring a light source may be provided.

In the panel 870, the liquid crystal is positioned between the glass bodies, and the polarizing plate is placed on both glass bodies to utilize the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

A color filter 880 is provided on the front surface of the panel 870 so that light projected from the panel 870 transmits only red, green, and blue light for each pixel.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

100: light emitting device 110: substrate
120: first conductivity type semiconductor layer 121: first layer
122: Second layer 123: Insert layer
123a: two-dimensional electron gas layer 130: active layer
140: second conductive type semiconductor layer 165: conductive layer
310: package body 321, 322: first and second lead frames
330: wire 340: molding part
350: phosphor 710: light emitting module
720: Reflector 730: Shade
800: Display device 810: Bottom cover
820: reflector 840: light guide plate
850: first prism sheet 860: second prism sheet
870: Panel 880: Color filter

Claims (10)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A first electrode positioned on the exposed first conductive semiconductor layer of the light emitting structure; And
And a second electrode located on the second conductive type semiconductor layer,
The first conductive semiconductor layer has a first layer and an In x2 Ga 1 -x2 N (0 <x2 <1) containing the In x1 Al y1 Ga 1 -x1- y1 N (0≤x1 <y1 <1) material An intercalation layer comprising a second layer comprising a material,
Wherein a difference in lattice constant between the first layer and the second layer is 0.12% to 1.83%. The method according to claim 1,
Wherein the insulator layer is located above the exposed surface of the first conductive semiconductor layer. The method according to claim 1,
Wherein the first layer has a thickness of 10 nm to 100 nm. The method according to claim 1,
And the second layer has a thickness of 2 nm to 100 nm. The method according to claim 1,
Wherein the first layer satisfies a range of In content x1 of 0? X1? 0.03 and an Al content y1 of 0.05? Y1? 0.3. The method according to claim 1,
And the content of In in the second layer satisfies a range of 0.03? X2? 0.1. The method according to claim 1,
Wherein the first conductive semiconductor layer includes a contact layer having an exposed surface on which the first electrode is located, and the inserting layer is on one side of the contact layer or on the upper side of the contact layer. The method according to claim 1,
And the second layer forms a two-dimensional electron gas (2DEG) layer at an interface with the first layer. The method according to claim 1,
And the second conductivity type semiconductor layer includes an electron blocking layer disposed adjacent to the active layer. The method according to claim 1,
Wherein the energy band gap of the first layer is larger than the energy band gap of the second layer.
KR1020120134242A 2012-11-26 2012-11-26 Light emitting device KR20140067243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120134242A KR20140067243A (en) 2012-11-26 2012-11-26 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120134242A KR20140067243A (en) 2012-11-26 2012-11-26 Light emitting device

Publications (1)

Publication Number Publication Date
KR20140067243A true KR20140067243A (en) 2014-06-05

Family

ID=51123524

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120134242A KR20140067243A (en) 2012-11-26 2012-11-26 Light emitting device

Country Status (1)

Country Link
KR (1) KR20140067243A (en)

Similar Documents

Publication Publication Date Title
US9318662B2 (en) Light emitting device with improved current spreading performance and lighting apparatus including the same
EP2696375B1 (en) Light emitting diode
KR20140059985A (en) Light emitting device
KR101908657B1 (en) Light emitting device
KR101998763B1 (en) Light emittng device
KR20140008064A (en) Light emitting device
KR101915213B1 (en) Light emitting device
KR20150011310A (en) Light emitting device
KR101991032B1 (en) Light emitting device
KR101922529B1 (en) Light emitting device
KR101963220B1 (en) Light emitting device
KR101929933B1 (en) Light emitting device and lighting system including the device
KR20140056930A (en) Light emitting device
KR102059033B1 (en) Light emitting device
KR102050053B1 (en) Light emitting device
KR102007401B1 (en) Light emitting device
KR20140046162A (en) Light emitting device
KR101915212B1 (en) Light emitting device
KR20140092092A (en) Light emitting device
KR101963222B1 (en) Light emitting device
KR101960791B1 (en) Light emitting device
KR20140056929A (en) Light emitting device
KR20140019509A (en) Light emitting device
KR101983775B1 (en) Light emitting device
KR20140056931A (en) Light emitting device

Legal Events

Date Code Title Description
A201 Request for examination
E601 Decision to refuse application