KR20150011310A - Light emitting device - Google Patents

Abstract

Disclosed is a light emitting device capable of improving reliability. The light emitting device according to one embodiment of the present invention includes a plurality of light emitting cells and a bridge electrode which electrically connects two adjacent light emitting cells. Each light emitting cell includes a light emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer which is located between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode which is formed on the first conductive semiconductor layer, and a second electrode which is formed on the second conductive semiconductor layer. The bridge electrode has a thicker part than the first electrode or the second electrode.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

BACKGROUND ART Light emitting devices such as light emitting diodes and laser diodes using semiconductor materials of Group 3-5 or 2-6 group semiconductors have been widely used for various colors such as red, green, blue, and ultraviolet And it is possible to realize white light rays with high efficiency by using fluorescent materials or colors, and it is possible to realize low energy consumption, semi-permanent life time, quick response speed, safety and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

A light emitting device including a plurality of light emitting cells connected in series or parallel has a bridge electrode for electrically connecting adjacent light emitting cells. In a light emitting device including a plurality of light emitting cells, a reliability problem may be caused, for example, when current flows to a bridge electrode having a small area during operation of the light emitting device and the bridge electrode is burnt.

The embodiment attempts to provide a light emitting device with improved reliability.

A light emitting device according to an embodiment includes a plurality of light emitting cells; And a bridge electrode electrically connecting the two adjacent light emitting cells, wherein the plurality of light emitting cells include a first conductive semiconductor layer, a second conductive semiconductor layer, a first conductive semiconductor layer, Type semiconductor layer, a first electrode on the first conductivity type semiconductor layer, and a second electrode on the second conductivity type semiconductor layer, wherein the bridge electrode comprises a first electrode Or a portion thicker than the second electrode.

The width of the bridge electrode may be greater than the width of the first electrode or the second electrode.

The light emitting structure may include an etched region partially etched to expose the first conductive type semiconductor layer, and the first electrode may be disposed on the exposed first conductive type semiconductor layer.

The bridge electrode includes a first portion in contact with a first electrode of one of two adjacent light emitting cells, a second portion in contact with a second electrode of the other light emitting cell, a second portion in contact with the first portion and the second portion, As shown in FIG.

The thickness of the third portion of the bridge electrode may be the largest.

The third portion may be disposed between adjacent two light emitting cells.

The bridge electrode may have the same height as the first electrode or the second electrode in the first portion or the second portion, respectively.

A plurality of the bridge electrodes may exist.

A portion of the first portion may be disposed on top of the first electrode, and a portion of the second portion may be disposed on top of the second electrode.

Wherein the bridge electrode further comprises a fourth portion disposed between the first portion and the third portion and between the second portion and the third portion, the thickness of the fourth portion being greater than the thickness of the first portion, And may be less than the thickness of each of the second portion and the third portion.

A light emitting device according to another embodiment includes a plurality of light emitting cells; And a bridge electrode electrically connecting the two adjacent light emitting cells, wherein the plurality of light emitting cells include a first conductive semiconductor layer, a second conductive semiconductor layer, a first conductive semiconductor layer, Type semiconductor layer, and the bridge electrode includes a first conductivity-type semiconductor layer of one of the two light-emitting cells adjacent to the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer of the other light- Layer, and a plurality of bridge electrodes are present between two adjacent light-emitting cells.

The plurality of light emitting cells may further include a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer, respectively, and the bridge electrode may include one of two adjacent light emitting cells A plurality of the first electrodes may be spaced apart from the second electrodes of the other one of the light emitting cells.

Wherein the first electrode and the second electrode have a longitudinal direction in a first direction and the plurality of bridge electrodes may have a longitudinal direction same as the first direction and a longitudinal direction in a second direction different from the first direction Lt; / RTI >

Wherein the plurality of bridge electrodes comprise a first portion on a first conductive type semiconductor layer of one of two adjacent light emitting cells, a second portion on a second conductive type semiconductor layer of another light emitting cell, And a third portion between the first and second portions.

The thickness of each of the first portion or the second portion may be the same as the thickness of the third portion.

The width of each of the plurality of bridge electrodes may be wider than the width of the first electrode or the width of the second electrode.

The light emitting device includes: a substrate disposed under the plurality of light emitting cells; And first irregularities formed in one region of the upper surface of the substrate positioned between adjacent light emitting cells.

Wherein a third portion of the bridge electrode is disposed on the one area of the upper surface of the substrate positioned between the adjacent light emitting cells and the upper surface of the third portion of the bridge electrode 2 irregularities may be formed.

The height of the top surface of the third portion of the bridge electrode relative to the top surface of the substrate may be less than or equal to the height of the top surface of the first portion of the bridge electrode.

According to the embodiment, it is possible to manufacture a light emitting device having improved reliability by improving the phenomenon of current concentration at the bridge electrode. Also, it is possible to improve the efficiency by reducing the resistance at the high resistance portion.

1 is a plan view of a light emitting device according to a first embodiment;
Fig. 2 is an enlarged plan view of a portion of Fig. 1; Fig.
FIG. 3 is a cross-sectional view of FIG. 2 cut in a direction AA and viewed from the front; FIG.
4 is an enlarged plan view of a portion of a light emitting device according to a second embodiment;
5 is an enlarged plan view of a part of a light emitting device according to a third embodiment.
6 is an enlarged plan view of a part of a light emitting device according to a fourth embodiment;
FIG. 7 is a cross-sectional view taken along the line AA in FIG. 6; FIG.
8 is a side sectional view of a part of the light emitting device according to the fifth embodiment.
9 is a side sectional view of a part of the light emitting device according to the sixth embodiment.
10 is a plan view of a light emitting device according to a seventh embodiment.
Fig. 11 is an enlarged plan view of a portion of Fig. 9; Fig.
Fig. 12 is a cross-sectional view taken from the front, in which Fig. 11 is cut in the BB direction; Fig.
13 is a side sectional view of a portion of a light emitting device according to an eighth embodiment;
14 is a side sectional view of a part of a light emitting device according to the ninth embodiment;
15 is a plan view of a light emitting device according to the tenth embodiment.
Fig. 16 is an enlarged plan view of a portion of Fig. 15; Fig.
FIG. 17 is a cross-sectional view of FIG. 16 taken along line BB; FIG.
18 is a side sectional view of a part of the light emitting device according to the eleventh embodiment.
19 is a cross-sectional view of a light emitting device according to a twelfth embodiment.
20 is a cross-sectional view of a light emitting device according to a thirteenth embodiment.
21 is a view illustrating an embodiment of a light emitting device package including the light emitting device according to the embodiments.
FIG. 22 illustrates an embodiment of a headlamp in which a light emitting device or a light emitting device package according to embodiments is disposed. FIG.
23 is a view illustrating a display device in which a light emitting device package according to an embodiment is disposed.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

FIG. 1 is a plan view of a light emitting device according to a first embodiment, FIG. 2 is a plan view showing an enlarged part of FIG. 1, and FIG. 3 is a cross-sectional view taken along the line AA in FIG.

1 to 3, the light emitting device 200A according to the first embodiment includes a plurality of light emitting cells 100 and a bridge electrode (not shown) for electrically connecting two adjacent light emitting cells 100 electrode, 150).

The plurality of light emitting cells 100 include LEDs (Light Emitting Diodes) using semiconductor layers of a plurality of compound semiconductor layers, for example, Group 3-VI-5 or Group-VI-VI elements, A colored LED that emits light such as red light, or a white LED or a UV LED. The emitted light of the LED may be variously modified by changing the type and concentration of the material forming the semiconductor layer, but the present invention is not limited thereto.

A substrate 110 is disposed below the plurality of light emitting cells 100. The plurality of light emitting cells 100 are supported by the substrate 110 and are disposed on the substrate 110 so as to be spaced apart from each other.

The substrate 110 may be formed of a material having excellent thermal conductivity, which is suitable for semiconductor material growth. At least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ O ₃ may be used as the substrate 110. The substrate 110 may be subjected to wet cleaning or plasma treatment to remove impurities on the surface.

The plurality of light emitting cells 100 may include a first conductive semiconductor layer 122, a second conductive semiconductor layer 126, an active layer between the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126, The first electrode 130 on the first conductive type semiconductor layer 122 and the second electrode 140 on the second conductive type semiconductor layer 126 include the light emitting structure 120 including the light emitting structure 124, do.

The light emitting structure 120 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, (MBE), hydride vapor phase epitaxy (HVPE), or the like, but the present invention is not limited thereto.

The first conductive semiconductor layer 122 may be formed of a semiconductor compound, for example, a compound semiconductor such as a group III-V element or a group II-VI element. The first conductive type dopant may also be doped. When the first conductivity type semiconductor layer 122 is an n-type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant, but is not limited thereto. When the first conductive semiconductor layer 122 is a p-type semiconductor layer, the first conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant, but is not limited thereto.

The first conductive semiconductor layer 122 includes a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) can do. The first conductive semiconductor layer 122 may include at least one element selected from the group consisting of Ga, N, In, Al, As and P, and may include at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP.

The second conductive semiconductor layer 126 may be formed of a semiconductor compound, and may be formed of a compound semiconductor such as a Group 3-Group 5 or a Group 2-Group 6, for example. The second conductivity type dopant may also be doped. When the second conductive semiconductor layer 126 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant, but is not limited thereto. When the second conductivity type semiconductor layer 126 is an n-type semiconductor layer, the second conductivity type dopant may include Si, Ge, Sn, Se, Te and the like as the n-type dopant, but is not limited thereto.

The second conductive semiconductor layer 126 includes a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + y? can do. The second conductive semiconductor layer 126 may include at least one element selected from the group consisting of Ga, N, In, Al, As, and P, and may include at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP.

Hereinafter, the case where the first conductivity type semiconductor layer 122 is an n-type semiconductor layer and the second conductivity type semiconductor layer 126 is a p-type semiconductor layer will be described as an example.

An n-type semiconductor layer (not shown) may be formed on the second conductive type semiconductor layer 126 when the semiconductor having the opposite polarity to the second conductive type, for example, the second conductive type semiconductor layer 126 is a p- . Accordingly, the light emitting structure may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The active layer 124 is disposed between the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126.

The active layer 124 is a layer in which electrons and holes meet each other to emit light having energy determined by the energy band inherent in the active layer (light emitting layer) material. When the first conductivity type semiconductor layer 122 is an n-type semiconductor layer and the second conductivity type semiconductor layer 126 is a p-type semiconductor layer, electrons are injected from the first conductivity type semiconductor layer 122, Holes can be injected from the conductive semiconductor layer 126. [

The active layer 124 may be formed of at least one of a single well structure, a multi-well structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 124 may be formed with a multiple quantum well structure by injecting trimethylgallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP ) / AlGaP, but the present invention is not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A buffer layer 112 may be disposed between the light emitting structure 120 and the substrate 110. The buffer layer 112 may serve to alleviate the difference in lattice mismatch and thermal expansion coefficient of the material of the light emitting structure 120 and the substrate 110. The material of the buffer layer 112 may be a Group III-V or Group II-VI compound semiconductor, and may be formed of at least one of GaN, InN, AlN, InGaN, InAlGaN, and AlInN.

An uncut semiconductor layer 114 may be disposed between the substrate 110 and the first conductivity type semiconductor layer 122. The undoped semiconductor layer 114 is formed to improve the crystallinity of the first conductivity type semiconductor layer 122 and may be formed of the same material as the first semiconductor layer 122 or a different material from the first semiconductor layer 122 . The undoped semiconductor layer 114 exhibits lower electrical conductivity than the first conductive type semiconductor layer 122 because the first conductive type dopant is not doped. The undoped semiconductor layer 114 may be disposed in contact with the first conductivity type semiconductor layer 122 at an upper portion of the buffer layer 112. The undoped semiconductor layer 114 grows at a temperature higher than the growth temperature of the buffer layer 112 and exhibits better crystallinity than the buffer layer 112.

According to an embodiment, the light emitting structure 120 may include a sloped side surface. When the side surface of the light emitting structure 120 includes the inclined surface, the inclined side surface may form an obtuse angle with the substrate 110.

The light emitting structure 120 includes an etching region E that is partially etched to expose the first conductivity type semiconductor layer 122. That is, a part of the second conductivity type semiconductor layer 126, the active layer 124 and the first conductivity type semiconductor layer 122 of the light emitting structure 120 is selectively etched to form a part of the first conductivity type semiconductor layer 122 Is exposed. The first electrode 130 is disposed on the first conductive type semiconductor layer 122 exposed by the etching region E and the second electrode 140 is disposed on the untreated second conductive type semiconductor layer 126 . The first electrode 122 is electrically connected to the first conductive semiconductor layer 122 and the second electrode 140 is electrically connected to the second conductive semiconductor layer 126.

The first electrode 130 and the second electrode 140 may be formed of a metal such as Mo, Cr, Ni, Au, Al, Layer structure including at least one of tungsten (V), tungsten (W), lead (Pd), copper (Cu), rhodium (Rh) or iridium (Ir).

The transparent electrode layer 142 may be disposed on the second conductive semiconductor layer 126 before the second electrode 140 is formed.

A portion of the transparent electrode layer 142 may be partially opened to expose the second conductive semiconductor layer 126 so that the second conductive semiconductor layer 126 and the second electrode 140 may be in contact with each other.

Alternatively, as shown in FIG. 3, the second conductive semiconductor layer 126 and the second electrode 140 may be electrically connected with the transparent electrode layer 142 interposed therebetween.

The transparent electrode layer 142 is formed to improve the electrical characteristics of the second conductive type semiconductor layer 126 and improve electrical contact with the second electrode 140, and may be formed in a layer or a plurality of patterns.

For example, a transparent conductive layer and a metal may be used for the transparent electrode layer 142. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO) ), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON TiO 2, Ag, Ni, Cr, Ti, Al, Rh, ZnO, IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf.

A bridge electrode 150 is disposed between adjacent two light emitting cells 100. The bridge electrode 150 electrically connects the adjacent two light emitting cells 100. 1 to 3, the bridge electrode 150 is connected to the first electrode 130 of one of the two adjacent light emitting cells 100 and the other of the light emitting cells 100 The plurality of light emitting cells 100 may be connected in series. Alternatively, the bridge electrode 150 may be connected to one of the two adjacent light emitting cells 100 and the other one of the light emitting cells 100, And the plurality of light emitting cells 100 may be connected in parallel.

As an example, referring to FIG. 3, the bridge electrode 150 connects two adjacent light emitting cells 100 in series. Specifically, the bridge electrode 150 extends from the second electrode 140 of one of the two adjacent light emitting cells 100 to the side of the light emitting cell 100 and the other side of the light emitting cell 100, The second light emitting cells 100 are connected to the first electrode 130 of the other light emitting cell 100 in series.

The bridge electrode 150 may include the same material as the first electrode 130 or the second electrode 140. For example, the bridge electrode 150 may include at least one of molybdenum (Mo), chromium (Cr), nickel (Ni) At least one of Au, Al, Ti, Pt, V, W, Pd, Cu, Rh, Layer structure or a multi-layer structure.

An insulating layer 160 is disposed on a side surface of the light emitting structure 120. The insulating layer 160 is disposed between the light emitting cell 100 and the bridge electrode 150 at the portion where the bridge electrode 150 is present.

The insulating layer 160 electrically separates the adjacent light emitting cells 100 or between the bridge electrode 150 and the light emitting cells 100. The first conductive semiconductor layer 122 and the second conductive semiconductor layer 126 may be formed in one light emitting cell 100. In this case, Can be prevented.

The insulating layer 160 may be made of a non-conductive oxide or nitride, and may include, for example, a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

The thickness of the bridge electrode 150 may not be uniform throughout. The bridge electrode 150 may have a thicker portion than the first electrode 130 or the second electrode 140.

The bridge electrode 150 includes a first portion 151 that is in contact with the first electrode 130 of one of the two adjacent light emitting cells 100 and a second portion 151 of the second light emitting cell 100 A second portion 152 in contact with the electrode 140 and a third portion 153 between the first portion 151 and the second portion 152, And a fourth portion 154 located on the side of the light emitting cell 100 by electrically connecting the portion 153 or the second portion 152 and the third portion 153. [

The first portion 151 is disposed on the first conductive semiconductor layer 122 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, The second portion 152 may be disposed on the second conductive semiconductor layer 126 in contact with the second electrode 140 of the other light emitting cell 100. The first portion 151 may be a portion disposed on the first conductive type semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The first portion 151 may be located on the first electrode 130 of one of the two adjacent light emitting cells 100 and the first conductive semiconductor layer 122 . The second portion 152 may be located on the second electrode 140 of the other light emitting cell 100 and may be disposed on the second conductive semiconductor layer 126. The first portion 151 may be a portion disposed on the first conductive type semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The third portion 153 is disposed between the adjacent two light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a space between the adjacent two light emitting cells 100 disposed on the substrate 110.

A fourth portion 154 of the bridge electrode 150 may be disposed between the first portion 151 and the third portion 153 and between the second portion 152 and the third portion 153 . The fourth portion 154 electrically connects the first portion 151 and the third portion 153 and the second portion and the third portion.

The bridge electrode 150 may be greater than the thickness (T ₂₎ of the third part 153, the thickness (T _B3) is the thickness of the first electrode (130), (T ₁₎ or second electrode (140) of. The thickness of the bridge electrode 150 is not uniform throughout and the thickness T _B3 of the third portion 153 may be greater than the thickness of the first portion 151 or the second portion 152. The bridging electrode 150 may be formed such that the thickness T _B4 of the fourth portion 154 is equal to the thickness of the first portion 151 or the second portion 152, May be less than the thickness of the second portion 152. The thickness (T _B3 ) of the third portion 153 of the bridge electrode 150 may be the largest.

At least a part of the bridge electrode 150 is formed thicker than the first electrode 130 or the second electrode 140 to enlarge the area of the bridge electrode 150 so that the area of the bridge electrode 150 It is possible to solve the reliability problem such that the current is concentrated on the bridge electrode 150 and the bridge electrode 150 is burnt.

The thickness of the first portion 151 or the second portion 152 of the bridge electrode 150 may be equal to the thickness of the first electrode 130 or the second electrode 140, respectively.

Alternatively, the bridge electrode 150 may be the same height as the first electrode 130 or the second electrode 140 in the first portion 151 or the second portion 152, respectively. That is, the bridge electrode 150 contacts the first electrode 130 without having a step with the first electrode 130 on the surface of the first portion 151, and the second electrode 152 on the surface of the second portion 152 140 and the second electrode 140 without a step.

Referring to FIG. 1 again, the light emitting cells 100Z ₁ disposed at one end in the array of the plurality of light emitting cells 100 include the second electrode 140 including the second electrode pad 140P, The area can be secured. Likewise, in the light emitting cell 100Z ₂ disposed at the other end in the arrangement of the plurality of light emitting cells 100, the first electrode 130 includes the first electrode pad 130P to secure an area for wire bonding have.

4 is an enlarged plan view showing a part of the light emitting device according to the second embodiment. The contents overlapping with the above embodiments will not be described again, and the differences will be mainly described below. 4 is cut in the AA direction, and the cross-sectional view as viewed from the front is the same as in FIG. 3, and therefore, FIG. 3 is also referred to.

Referring to FIG. 4, the light emitting device 200B according to the second embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100. FIG.

The thickness of the bridge electrode 150 is not uniform throughout. The bridge electrode 150 has a thicker portion than the first electrode 130 or the second electrode 140.

The bridge electrode 150 includes a first portion 151 that is in contact with the first electrode 130 of one of the two adjacent light emitting cells 100 and a second portion 151 of the second light emitting cell 100 A second portion 152 in contact with the electrode 140 and a third portion 153 between the first portion 151 and the second portion 152, And a fourth portion 154 located on the side of the light emitting cell 100 by electrically connecting the portion 153 or the second portion 152 and the third portion 153. [

The bridge electrode 150 may be greater than the thickness (T ₂₎ of the third part 153, the thickness (T _B3) is the thickness of the first electrode (130), (T ₁₎ or second electrode (140) of. The thickness of the bridge electrode 150 is not uniform throughout and the thickness T _B3 of the third portion 153 may be greater than the thickness of the first portion 151 or the second portion 152. The bridging electrode 150 may be formed such that the thickness T _B4 of the fourth portion 154 is equal to the thickness of the first portion 151 or the second portion 152, May be less than the thickness of the second portion 152. The thickness (T _B3 ) of the third portion 153 of the bridge electrode 150 may be the largest.

The light emitting device 200B according to the second embodiment is different from the light emitting device 200A according to the first embodiment in that the width W _B of the bridge electrode 150 is greater than the width W of the first electrode 130 ₁ ) or the width (W ₂ ) of the second electrode 140.

The width W _B of the bridge electrode 150 may be 25 탆 to 35 탆. For example, the width W _B of the bridge electrode 50 may be 30 탆. The width W ₁ of the first electrode 130 or the width W ₂ of the second electrode 140 may be 5 μm to 10 μm. For example, the width W ₁ of the first electrode 130 or the width W ₂ of the second electrode 140 may be 7 μm, and the width W ₁ of the first electrode 130 may be 7 μm, narrower than the width (W _2), or may be the same.

According to the second embodiment, the width of the bridge electrode (150) (W _B) of the width of the first electrode (130) (W ₁₎ or the second width of the electrode (140) (W ₂₎ than the widen bridge electrode (150 The reliability can be further improved and problems such as disconnection of the bridge electrode 150 and the like can be solved. Since the bridge electrode 150 is disposed at the edge portion of the light emitting cell 100, light absorption due to an increase in the width W _B of the bridge electrode 150 can be minimized.

5 is an enlarged plan view showing a part of the light emitting device according to the third embodiment. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below. 5 is cut in the AA direction, and the cross-sectional view as seen from the front is the same as in Fig. 3, and therefore, Fig. 3 is also referred to.

Referring to FIG. 5, a light emitting device 200C according to the third embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100. FIG.

The light emitting device 200C according to the third embodiment differs from the light emitting device 200A according to the first embodiment in that a plurality of bridge electrodes 150 are disposed between adjacent two light emitting cells 100 .

For example, two bridge electrodes 150 spaced apart from each other may be disposed between adjacent two light emitting cells 100.

The width of each of the two bridge electrodes 150 spaced apart from each other may be greater than the width of the first electrode 130 or the width of the second electrode 140.

The width of each of the two bridge electrodes 150 spaced apart from each other may be 15 占 퐉 to 25 占 퐉. For example, the width of each of the two bridge electrodes 150 may be 20 占 퐉. The width of the first electrode 130 or the width of the second electrode 140 may be the same as that described in FIG.

The thickness of the bridge electrode 150 is not uniform throughout. Each bridge electrode 150 has a thicker portion than the first electrode 130 or the second electrode 140.

The bridge electrode 150 includes a first portion 151 that is in contact with the first electrode 130 of one of the two adjacent light emitting cells 100 and a second portion 151 of the second light emitting cell 100 A second portion 152 in contact with the electrode 140 and a third portion 153 between the first portion 151 and the second portion 152, And a fourth portion 154 located on the side of the light emitting cell 100 by electrically connecting the third portion 153 or the second portion 152 and the third portion 153. [

The bridge electrode 150 may be greater than the thickness (T ₂₎ of the third part 153, the thickness (T _B3) is the thickness of the first electrode (130), (T ₁₎ or second electrode (140) of. The thickness of the bridge electrode 150 is not uniform throughout and the thickness T _B3 of the third portion 153 may be greater than the thickness of the first portion 151 or the second portion 152. The bridging electrode 150 may be formed such that the thickness T _B4 of the fourth portion 154 is equal to the thickness of the first portion 151 or the second portion 152, May be less than the thickness of the second portion 152. The thickness (T _B3 ) of the third portion 153 of the bridge electrode 150 may be the largest.

According to the third embodiment, a plurality of bridge electrodes 150 may be disposed between adjacent two light emitting cells 100, and as a result, the area of the bridge electrode 150 may be enlarged. It is possible to solve the disconnection fault by the other bridge electrode 150 even if it is disconnected, so that the reliability can be improved. Since the bridge electrode 150 is disposed at the edge portion of the light emitting cell 100, light absorption due to an increase in the number of the bridge electrodes 150 can be minimized.

FIG. 6 is an enlarged plan view of a portion of the light emitting device according to the fourth embodiment, and FIG. 7 is a cross-sectional view taken along the line AA in FIG. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below.

6 and 7, the light emitting device 200D according to the fourth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100 .

The thickness of the bridge electrode 150 may not be uniform throughout. The bridge electrode 150 may have a thicker portion than the first electrode 130 or the second electrode 140.

The bridge electrode 150 includes a first portion 151 that is in contact with the first electrode 130 of one of the two adjacent light emitting cells 100 and a second portion 151 of the second light emitting cell 100 A second portion 152 in contact with the electrode 140 and a third portion 153 between the first portion 151 and the second portion 152, And a fourth portion 154 located on the side of the light emitting cell 100 by electrically connecting the portion 153 or the second portion 152 and the third portion 153. [

The first portion 151 is in contact with the upper surface of the first electrode 130 of one of the two adjacent light emitting cells 100. That is, the first part 151 is partially disposed on the upper part of the first conductivity type semiconductor layer 122 of one of the two light emitting cells 100, and the other part Is disposed on the first electrode 130 of any one of the light emitting cells 100. The second portion 152 is in contact with the upper surface of the second electrode 140 of the other light emitting cell 100. That is, the second portion 152 is partially disposed on the second conductivity type semiconductor layer 126 of the other light emitting cell 100, and another portion is disposed on the other light emitting cell 100 (140) of the first electrode (100).

The bridge electrode 150 may be greater than the thickness (T ₂₎ of the third part 153, the thickness (T _B3) is the thickness of the first electrode (130), (T ₁₎ or second electrode (140) of. The thickness of the bridge electrode 150 is not uniform throughout and the thickness T _B3 of the third portion 153 may be greater than the thickness of the first portion 151 or the second portion 152. The bridging electrode 150 may be formed such that the thickness T _B4 of the fourth portion 154 is equal to the thickness of the first portion 151 or the second portion 152, May be less than the thickness of the second portion 152. The thickness (T _B3 ) of the third portion 153 of the bridge electrode 150 may be the largest. The width of the bridge electrode 150 is increased in a portion having a large resistance such as a connection portion between the electrodes 130 and 140 of the light emitting cell 100 and the bridge electrode 150, It is possible to solve the reliability problem such that the current is concentrated in the bridge electrode 150 of the bridge electrode 150 and the bridge electrode 150 is burnt.

8 is a side cross-sectional view of a portion of the light emitting device according to the fifth embodiment. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below. Since the plan view of FIG. 8 is the same as FIG. 6, FIG. 6 is also referred to.

Referring to FIG. 8, the light emitting device 200E according to the fifth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100. FIG.

The bridge electrode 150 includes a first portion 151 that is in contact with the first electrode 130 of one of the two adjacent light emitting cells 100 and a second portion 151 of the second light emitting cell 100 A second portion 152 in contact with the electrode 140 and a third portion 153 between the first portion 151 and the second portion 152, And may include a fourth portion 154 that is located on the side surface of the light emitting cell 100 by electrically connecting the portion 153 or the second portion 152 to the third portion 153. [ The first portion 151 may be in contact with the upper surface and at least one side surface of the first electrode 130. The first portion 151 may be disposed to surround the first electrode 130. The second portion 152 may be in contact with the upper surface and at least one side surface of the second electrode 140. The second portion 152 may be disposed to surround the second electrode 140.

The first portion 151 may be formed such that the thickness TB ₁₁ of the portion located on the first conductivity type semiconductor layer 122 and the thickness TB ₁₂ of the portion located on the first electrode 130 are substantially equal can do. The second portion 152 is formed such that the thickness TB ₂₁ of the portion located on the second conductivity type semiconductor layer 126 and the thickness TB ₂₂ of the portion located on the second electrode 140 are substantially . ≪ / RTI >

9 is a side cross-sectional view of a part of the light emitting device according to the sixth embodiment. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below.

Referring to FIG. 9, the light emitting device 200F according to the sixth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100. FIG.

The light emitting device 200F includes a light emitting element 200B except for a portion where the bridge electrode 152 and the first electrode 130 are electrically connected and a portion where the bridge electrode 152 and the second electrode 140 are electrically connected, The passivation layer 160 may be disposed on the surface of the passivation layer 200F.

FIG. 10 is a plan view of the light emitting device according to the seventh embodiment, FIG. 11 is an enlarged plan view of a portion of FIG. 9, and FIG. 12 is a cross-sectional view taken along the BB direction in FIG. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below.

10 to 12, a light emitting device 300A according to the seventh embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100 .

A substrate 110 is disposed below the plurality of light emitting cells 100. The plurality of light emitting cells 100 are supported by the substrate 110 and are disposed on the substrate 110 so as to be spaced apart from each other.

A plurality of bridge electrodes 150 are disposed between adjacent two light emitting cells 100. The bridge electrode 150 electrically connects the adjacent two light emitting cells 100.

The bridge electrode 150 is connected to the first conductive semiconductor layer 122 of one of the two light emitting cells 100 and the second conductive semiconductor layer 122 of the other light emitting cell 100 126 can be electrically connected.

According to the fourth embodiment, a plurality of bridge electrodes 150 may be disposed between adjacent two light emitting cells 100, resulting in enlargement of the area of the bridge electrode 150, and any one of the bridge electrodes 150 It is possible to solve the disconnection fault by the other bridge electrode 150 even if it is disconnected, so that the reliability can be improved.

The plurality of bridge electrodes 150 are formed on the first portion 151 of the first conductivity type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and the other portion of the light emitting cells 100 And a third portion 153 between the first portion 151 and the second portion 152. The first portion 151 and the second portion 152 of the second conductive semiconductor layer 126 may be formed of the same material. The first portion 151 may be a portion disposed on the first conductive type semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The third portion 153 is disposed between the adjacent two light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a space between the adjacent two light emitting cells 100 disposed on the substrate 110.

The bridge electrode 150 between the first part 151 and the third part 153 and the bridge electrode 150 between the second part 152 and the third part 153 are formed on the side surface of the light emitting structure 120 As shown in FIG.

In the seventh embodiment, the bridge electrode 150 is directly electrically connected to the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126 of the light emitting cell 100 without a separate first or second electrode. . That is, the bridge electrode 150 is formed such that the first conductive type semiconductor layer 122 and the first portion 151 of one of the adjacent two light emitting cells 100 are in contact with each other, The second conductive semiconductor layer 126 and the second portion 152 of the first conductive semiconductor layer 100 can be in contact with each other.

10, the light emitting cells (100Z ₁₎ disposed at one end in an array of a plurality of light emitting cells 100 has a second electrode pad (140P) on the conductive semiconductor layer 126 is disposed wires An area for bonding can be ensured. Similarly, the light emitting cells (100Z ₂₎ disposed in an array to the other end of the plurality of light emitting cells 100 are disposed a first electrode pad (130P) on a first conductive type semiconductor layer 122 is an area for wire bonding .

13 is a side cross-sectional view of a part of the light emitting device according to the eighth embodiment. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below. The plan view of FIG. 13 is the same as FIG. 11, and therefore, FIG. 11 is also referred to.

Referring to FIG. 13, the light emitting device 300B according to the eighth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100. FIG.

The light emitting device 300B according to the eighth embodiment differs from the light emitting device 300A according to the seventh embodiment in that the thickness of the bridge electrode 150 is not uniform throughout.

The bridge electrode 150 is connected to the first portion 151 on the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and the first portion 151 of the other light emitting cell 100 A second portion 152 on the second conductive semiconductor layer 126, a third portion 153 between the first portion 151 and the second portion 152, and a first portion 151 And a fourth portion 154 located on the side of the light emitting cell 100 by electrically connecting the third portion 153 or the second portion 152 and the third portion 153 have. The first portion 151 may be a portion disposed on the first conductive type semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The third portion 153 is disposed between the adjacent two light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a space between the adjacent two light emitting cells 100 disposed on the substrate 110.

A fourth portion 154 of the bridge electrode 150 may be disposed between the first portion 151 and the third portion 153 and between the second portion 152 and the third portion 153 . The fourth portion 154 electrically connects the first portion 151 and the third portion 153 and the second portion and the third portion.

The bridge electrode 150 may be formed such that the thickness T _B3 of the third portion 153 is greater than the thickness T _B1 of the first portion 151 or the thickness T _B2 of the second portion 152 have. The bridging electrode 150 may be formed such that the thickness T _B4 of the fourth portion 154 is equal to the thickness of the first portion 151 or the second portion 152, May be less than the thickness of the second portion 152. The thickness (T _B3 ) of the third portion 153 of the bridge electrode 150 may be the largest.

According to the eighth embodiment, at least a part of the bridge electrode 150 is formed thick to widen the area of the bridge electrode 150, so that current is concentrated on the bridge electrode 150 having a small area during the operation of the light emitting device, It is possible to solve the problem of reliability degradation such as burning of the light emitting diode 150.

14 is a side sectional view of a part of the light emitting device according to the ninth embodiment. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below. The plan view of FIG. 14 is the same as FIG. 11, and therefore, FIG. 11 is also referred to.

Referring to FIG. 14, the light emitting device 300C according to the ninth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100. FIG.

The bridge electrode 150 is connected to the first portion 151 on the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and the first portion 151 of the other light emitting cell 100 A second portion 152 on the second conductive semiconductor layer 126, a third portion 153 between the first portion 151 and the second portion 152, and a first portion 151 And a fourth portion 154 located on the side of the light emitting cell 100 by electrically connecting the third portion 153 or the second portion 152 and the third portion 153 have. The first portion 151 may be a portion disposed on the first conductive type semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The light emitting device 300C according to the ninth embodiment differs from the light emitting device 300B according to the eighth embodiment in that the thickness T _B1 of the first portion 151 or the thickness T _{H2 of} the second portion 152 T _B2 is greater than the thickness T _B4 of the fourth portion 154. The thickness T _B1 of the first portion 151 or the thickness T _B2 of the second portion 152 may be less than the thickness T _{B3 of} the third portion 153, (T _B3 ) of the _inner surface of the base plate.

The area of the bridge electrode 150 is widened at a portion having a large resistance such as a connection portion between the first and second conductive semiconductor layers 122 and 126 and the bridge electrode 150 of the light emitting cell 100, It is possible to solve the reliability problem such that the current is concentrated on the bridge electrode 150 having a small area during the operation of the light emitting element and the bridge electrode 150 is burnt.

FIG. 15 is a plan view of the light emitting device according to the tenth embodiment, FIG. 16 is a plan view showing an enlarged part of FIG. 15, and FIG. 17 is a sectional view taken along line BB in FIG. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below.

15 to 17, a light emitting device 300D according to the tenth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100 .

A substrate 110 is disposed below the plurality of light emitting cells 100. The plurality of light emitting cells 100 are supported by the substrate 110 and are disposed on the substrate 110 so as to be spaced apart from each other.

A plurality of bridge electrodes 150 are disposed between adjacent two light emitting cells 100. The bridge electrode 150 electrically connects the adjacent two light emitting cells 100.

The bridge electrode 150 is formed between the first electrode 130 of one of the two adjacent light emitting cells 100 and the second electrode 140 of the other light emitting cell 100 Respectively.

The bridge electrode 150 includes a first portion 151 that is in contact with the first electrode 130 of one of the two adjacent light emitting cells 100 and a second portion 151 of the second light emitting cell 100 A second portion 152 in contact with the electrode 140 and a third portion 153 between the first portion 151 and the second portion 152.

The first portion 151 is disposed on the first conductive semiconductor layer 122 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, The second portion 152 may be disposed on the second conductive semiconductor layer 126 in contact with the second electrode 140 of the other light emitting cell 100. The first portion 151 may be a portion disposed on the first conductive type semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The third portion 153 is disposed between the adjacent two light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a space between the adjacent two light emitting cells 100 disposed on the substrate 110.

The bridge electrode 150 between the first part 151 and the third part 153 and the bridge electrode 150 between the second part 152 and the third part 153 are formed on the side surface of the light emitting structure 120 As shown in FIG.

Referring to FIG. 16, the first electrode 130 and the second electrode 140 may be arranged to have a longitudinal direction in the first direction. The plurality of bridge electrodes 150 may have a longitudinal direction in a second direction different from the first direction. As an example, the first direction and the second direction may be orthogonal.

According to an embodiment, the bridge electrode 150 is disposed between the first electrode 130 arranged to have a longitudinal direction in the first direction and the second electrode 140 arranged to have a longitudinal direction in the first direction, A plurality of spaced apart portions may be disposed so as to have a lengthwise direction. At this time, the first portion 151 of the plurality of bridge electrodes 150 is in contact with the first electrode 130, and the second portion 152 of the plurality of bridge electrodes 150 is in contact with the second electrode 130.

The thickness of the first portion 151 or the second portion 152 of the bridge electrode 150 may be equal to the thickness of the first electrode 130 or the second electrode 140, respectively.

Alternatively, the bridge electrode 150 may be the same height as the first electrode 130 or the second electrode 140 in the first portion 151 or the second portion 152, respectively. That is, the bridge electrode 150 contacts the first electrode 130 without having a step with the first electrode 130 on the surface of the first portion 151, and the second electrode 152 on the surface of the second portion 152 140 and the second electrode 140 without a step.

Referring back to Figure 15, the light emitting cells (100Z ₁₎ disposed at one end in an array of a plurality of light emitting cell 100 is second electrode 140 and a second electrode pad (140P) for wire bonding The area can be secured. Likewise, in the light emitting cell 100Z ₂ disposed at the other end in the arrangement of the plurality of light emitting cells 100, the first electrode 130 includes the first electrode pad 130P to secure an area for wire bonding have.

18 is a side sectional view of a part of the light emitting device according to the eleventh embodiment. The contents overlapping with the above-described embodiments will not be described again, and the differences will be mainly described below. The plan view of FIG. 18 is the same as FIG. 16, and therefore, FIG. 16 is also referred to.

Referring to FIG. 18, the light emitting device 300E according to the eleventh embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 for electrically connecting two adjacent light emitting cells 100. FIG.

The light emitting device 300E according to the eleventh embodiment is different from the light emitting device 300D according to the tenth embodiment in that the thickness of the bridge electrode 150 is not uniform throughout.

The bridge electrode 150 is connected to the first portion 151 on the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and the first portion 151 of the other light emitting cell 100 A second portion 152 on the second conductive semiconductor layer 126, a third portion 153 between the first portion 151 and the second portion 152, and a first portion 151 And a fourth portion 154 located on the side of the light emitting cell 100 by electrically connecting the third portion 153 or the second portion 152 and the third portion 153 have. The first portion 151 may be a portion disposed on the first conductive type semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The third portion 153 is disposed between the adjacent two light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a space between the adjacent two light emitting cells 100 disposed on the substrate 110.

A fourth portion 154 of the bridge electrode 150 may be disposed between the first portion 151 and the third portion 153 and between the second portion 152 and the third portion 153 . The fourth portion 154 electrically connects the first portion 151 and the third portion 153 and the second portion and the third portion.

The bridge electrode 150 may be greater than the thickness (T ₂₎ of the third part 153, the thickness (T _B3) is the thickness of the first electrode (130), (T ₁₎ or second electrode (140) of. The thickness of the bridge electrode 150 is not uniform throughout and the thickness T _B3 of the third portion 153 may be greater than the thickness of the first portion 151 or the second portion 152. The bridging electrode 150 may be formed such that the thickness T _B4 of the fourth portion 154 is equal to the thickness of the first portion 151 or the second portion 152, May be less than the thickness of the second portion 152. The thickness (T _B3 ) of the third portion 153 of the bridge electrode 150 may be the largest.

According to the eleventh embodiment, at least a part of the bridge electrode 150 is thickened to widen the area of the bridge electrode 150, so that current is concentrated on the bridge electrode 150 having a small area during operation of the light emitting device, It is possible to solve the problem of reliability degradation such as burning of the light emitting diode 150.

The thickness of the first portion 151 or the second portion 152 of the bridge electrode 150 may be equal to the thickness of the first electrode 130 or the second electrode 140, respectively.

Alternatively, the bridge electrode 150 may be the same height as the first electrode 130 or the second electrode 140 in the first portion 151 or the second portion 152, respectively. That is, the bridge electrode 150 contacts the first electrode 130 without having a step with the first electrode 130 on the surface of the first portion 151, and the second electrode 152 on the surface of the second portion 152 140 and the second electrode 140 without a step.

19 is a sectional view of a light emitting device 400A according to the twelfth embodiment. The same reference numerals as those in Fig. 3 denote the same components, and a description of the same components is omitted.

Referring to FIG. 19, irregularities 110a may be formed on the upper surface of the substrate 110 to scatter light emitted from the light emitting structure 120 to improve light extraction. For example, the substrate 110 may be a patterned sapphire substrate (PSS).

The concavity and convexity 110a may be formed in one region (hereinafter referred to as "first region S1 of the substrate 110") of the upper surface of the substrate 110 located between adjacent light emitting cells.

A portion of the insulating layer 160 disposed on the concave and convex portions 110a formed in the first region S1 of the substrate 110 may have a curved surface corresponding to the concave and convex portions 110a, May be the same as the shape of the outer peripheral surface of the unevenness 110a.

The upper surface of the third portion 153 of the bridge electrode 150 disposed on the insulating layer 160 located in the first region S1 of the substrate 110 is provided with a protrusion 110a on the upper surface of the substrate 110 Corresponding unevenness 153a can be formed. The unevenness 153a of the third portion 153 of the bridge electrode 150 may include a plurality of protrusions that protrude from the upper surface of the third portion 153 of the bridge electrode 150. [

The thickness T _B3 of the third portion 153 of the bridge electrode 150 may be greater than the thickness of the first portion 151 or the second portion 152 of the bridge electrode 150.

The thickness T _B3 of the third portion 153 of the bridge electrode 150 may be less than or equal to the sum of the thickness of the first portion 151 of the bridge electrode 150 and the first thickness T 5. The first thickness T5 may be the sum of the thickness of the buffer layer 115, the thickness of the undoped semiconductor layer 114, and the etching area E of the light emitting structure 120.

The height of the upper surface of the third portion 153 of the bridge electrode 150 is lower than or equal to the height of the upper surface of the first portion 151 of the bridge electrode 150 .

20 is a cross-sectional view of a light emitting device 400B according to the thirteenth embodiment. The same reference numerals as in Fig. 12 denote the same components, and a description of the same components is omitted.

20, the third portion 153 of the bridge electrode 150, which is disposed on the insulating layer 160 located in the first region S1 of the substrate 110, (Not shown). The unevenness 153a of the third portion 153 of the bridge electrode 150 may include a plurality of protrusions that protrude from the upper surface of the third portion 153 of the bridge electrode 150. [

The twelfth embodiment differs from the twelfth embodiment in that the thicknesses of the first to third portions 151, 152, 153 of the bridge electrode 150 are all the same.

FIG. 21 illustrates an embodiment of a light emitting device package including the light emitting device according to the embodiments.

The light emitting device package 400 according to one embodiment includes a body 410, a first lead frame 421 and a second lead frame 422 disposed on the body 410, Emitting device 200 according to the above-described embodiments electrically connected to the first lead frame 421 and the second lead frame 422 and a molding part 440 formed in the cavity . A cavity may be formed in the body 410. As described above, the light emitting devices 200 and 300 include a plurality of light emitting cells connected in series or in parallel.

The body 410 may be formed of a silicon material, a synthetic resin material, or a metal material. If the body 410 is made of a conductive material such as a metal material, an insulating layer may be coated on the surface of the body 410 to prevent an electrical short between the first and second lead frames 421 and 422 .

The first lead frame 421 and the second lead frame 422 are electrically separated from each other and supply current to the light emitting device 200 (300). The first lead frame 421 and the second lead frame 422 may increase light efficiency by reflecting the light generated from the light emitting devices 200 and 300, It is possible to discharge the generated heat to the outside.

The light emitting device 200 may be disposed on the body 410 or may be disposed on the first lead frame 421 or the second lead frame 422. The first lead frame 421 and the light emitting devices 200 and 300 are directly energized and the second lead frame 422 and the light emitting devices 200 and 300 are connected through the wires 430 . The light emitting devices 200 and 300 may be connected to the lead frames 421 and 422 by a flip chip method or a die bonding method in addition to the wire bonding method.

The molding part 440 may surround and protect the light emitting device 200 (300). In addition, the phosphor 450 may be included on the molding part 440 to change the wavelength of light emitted from the light emitting device 200 (300).

The phosphor 450 may include a garnet-based phosphor, a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor.

For example, the garnet-base phosphor is _{YAG (Y 3 Al 5 O 12} : Ce 3 +) or TAG: may be a _{(Tb 3 Al 5 O 12 Ce} 3 +), wherein the silicate-based phosphor is (Sr, Ba, Mg, Ca) ₂ SiO ₄ : Eu ^{2 +} , and the nitride phosphor may be CaAlSiN ₃ : Eu ^{2 +} containing SiN, and the oxynitride phosphor may be Si _{6 - x Al x O x N 8 -x:} Eu 2 + (0 <x <6) can be.

The light of the first wavelength range emitted from the light emitting device 200 is excited by the phosphor 350 to be converted into the light of the second wavelength range and the light of the second wavelength range is transmitted through the lens (not shown) The light path can be changed.

A plurality of light emitting device packages according to embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment may be implemented as a display device, an indicating device, a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a streetlight .

Hereinafter, the headlamp and the backlight unit will be described as an embodiment of the lighting system in which the above-described light emitting device or the light emitting device package is disposed.

22 is a view illustrating an embodiment of a headlamp in which a light emitting device or a light emitting device package according to embodiments is disposed.

22, the light emitted from the light emitting module 710 having the light emitting device or the light emitting device package according to the embodiments is reflected by the reflector 720 and the shade 730 and then transmitted through the lens 740 It can be directed toward the front of the vehicle body.

The light emitting module 710 may include a plurality of light emitting devices on a circuit board, but the present invention is not limited thereto.

23 is a diagram illustrating a display device in which a light emitting device package according to an embodiment is disposed.

23, the display device 800 according to the embodiment includes the light emitting modules 830 and 835, the reflection plate 820 on the bottom cover 810, and the reflection plate 820 disposed in front of the reflection plate 820, A first prism sheet 850 and a second prism sheet 860 disposed in front of the light guide plate 840 and a second prism sheet 860 disposed in front of the light guide plate 840, A panel 870 disposed in front of the panel 870 and a color filter 880 disposed in the front of the panel 870.

The light emitting module includes the above-described light emitting device package 835 on the circuit board 830. Here, the circuit board 830 may be a PCB or the like, and the light emitting device package 835 may be any one of the embodiments.

The bottom cover 810 may house the components in the display device 800. The reflection plate 820 may be formed as a separate component as shown in the drawing, or may be formed to be coated on the rear surface of the light guide plate 840 or on the front surface of the bottom cover 810 with a highly reflective material Do.

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 840 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance. The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). An air guide system is also available in which the light guide plate is omitted and light is transmitted in a space above the reflective sheet 820.

The first prism sheet 850 is formed on one side of the support film with a transparent and elastic polymeric material, and the polymer may have a prism layer in which a plurality of steric structures are repeatedly formed. As shown in the drawings, the plurality of patterns may be repeatedly provided with a stripe pattern.

In the second prism sheet 860, the edges and the valleys on one surface of the support film may be perpendicular to the edges and the valleys on one surface of the support film in the first prism sheet 850. This is to uniformly distribute the light transmitted from the light emitting module and the reflective sheet in all directions of the panel 870.

In the present embodiment, the first prism sheet 850 and the second prism sheet 860 form an optical sheet, which may be formed of other combinations, for example, a microlens array or a diffusion sheet and a microlens array Or a combination of one prism sheet and a microlens array, or the like.

A liquid crystal display (LCD) panel may be disposed on the panel 870. In addition to the liquid crystal display panel 860, other types of display devices requiring a light source may be provided.

In the panel 870, the liquid crystal is positioned between the glass bodies, and the polarizing plate is placed on both glass bodies to utilize the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

A color filter 880 is provided on the front surface of the panel 870 so that light projected from the panel 870 transmits only red, green, and blue light for each pixel.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100: light emitting cell 110: substrate
120: light emitting structure 122: first conductivity type semiconductor layer
124: active layer 126: second conductivity type semiconductor layer
130: first electrode 140: second electrode
150: bridge electrode 151: first part
152: second part 153: third part
160: insulating layers 200A to 200C, 300A to 300D:
310: package body 321, 322: first and second lead frames
330: wire 340: molding part
350: phosphor 710: light emitting module
720: Reflector 730: Shade
800: Display device 810: Bottom cover
820: reflector 840: light guide plate
850: first prism sheet 860: second prism sheet
870: Panel 880: Color filter

Claims (20)

A plurality of light emitting cells; And
And a bridge electrode electrically connecting two adjacent light emitting cells,
The plurality of light emitting cells may include a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode on the semiconductor layer and a second electrode on the second conductivity type semiconductor layer,
Wherein the bridge electrode has a thicker portion than the first electrode or the second electrode. The method according to claim 1,
Wherein a width of the bridge electrode is larger than a width of the first electrode or the second electrode. The method according to claim 1,
Wherein the light emitting structure includes an etched region partially etched to expose the first conductive type semiconductor layer, and the first electrode is disposed on the exposed first conductive type semiconductor layer. The method according to claim 1,
The bridge electrode includes a first portion in contact with a first electrode of one of two adjacent light emitting cells, a second portion in contact with a second electrode of the other light emitting cell, a second portion in contact with the first portion and the second portion, And a second portion of the light emitting device. 5. The method of claim 4,
Wherein the bridge electrode has the largest thickness of the third portion. 5. The method of claim 4,
And the third portion is disposed between two adjacent light emitting cells. 5. The method of claim 4,
Wherein the bridge electrode has the same height as the first electrode or the second electrode in the first portion or the second portion. 5. The method of claim 4,
Wherein a plurality of bridge electrodes are present between adjacent two light emitting cells. 5. The method of claim 4,
Wherein a portion of the first portion is disposed on the upper portion of the first electrode, and a portion of the second portion is disposed on the upper portion of the second electrode. 5. The method of claim 4,
The bridge electrode further comprises a fourth portion disposed between the first portion and the third portion and between the second portion and the third portion,
And the thickness of the fourth portion is smaller than the thickness of each of the first portion, the second portion or the third portion. A plurality of light emitting cells; And
And a bridge electrode electrically connecting two adjacent light emitting cells,
The plurality of light emitting cells each include a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer,
The bridge electrode electrically connects the first conductive semiconductor layer of one of the two light emitting cells adjacent to the second conductive semiconductor layer of the other light emitting cell,
Wherein a plurality of bridge electrodes are present between adjacent two light emitting cells. 12. The method of claim 11,
The plurality of light emitting cells further include a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer,
Wherein the bridge electrode is disposed between the first electrode of one of the two adjacent light emitting cells and the second electrode of the other light emitting cell. 13. The method of claim 12,
Wherein the first electrode and the second electrode have a longitudinal direction in a first direction and the plurality of bridge electrodes each have a longitudinal direction in a second direction different from the first direction. 11. The method of claim 10,
Wherein the plurality of bridge electrodes comprise a first portion on a first conductive type semiconductor layer of one of two adjacent light emitting cells, a second portion on a second conductive type semiconductor layer of another light emitting cell, And a third portion between the first portion and the second portion. 15. The method of claim 14,
Wherein the bridge electrode has the largest thickness of the third portion. 15. The method of claim 14,
And the thickness of each of the first portion and the second portion is equal to the thickness of the third portion. 13. The method of claim 12,
Wherein a width of each of the plurality of bridge electrodes is greater than a width of the first electrode or a width of the second electrode. 15. The method of claim 14,
A substrate disposed below the plurality of light emitting cells; And
And a first concavo-convex portion formed in one region of an upper surface of the substrate positioned between adjacent light emitting cells. 19. The method of claim 18,
A third portion of the bridge electrode is disposed on the one area of the upper surface of the substrate positioned between the adjacent light emitting cells,
And a second irregular portion corresponding to the first irregularities is formed on an upper surface of the third portion of the bridge electrode. 19. The method of claim 18,
The height of the upper surface of the third portion of the bridge electrode is lower than or equal to the height of the upper surface of the first portion of the bridge electrode with respect to the upper surface of the substrate.

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