CN204792904U - Emitting diode chip and illuminator - Google Patents
Emitting diode chip and illuminator Download PDFInfo
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- CN204792904U CN204792904U CN201520378962.0U CN201520378962U CN204792904U CN 204792904 U CN204792904 U CN 204792904U CN 201520378962 U CN201520378962 U CN 201520378962U CN 204792904 U CN204792904 U CN 204792904U
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- backlight unit
- peristome
- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The utility model discloses an emitting diode chip and illuminator. Illuminator includes: the emitting diode chip, it includes emitting diode portion and protective diode portion, and lens, it is located the emitting diode chip, lens include: the lower part face, it is formed with undercut portion, the definition of undercut portion supplies from the incident surface of the light incidence of emitting diode chip release, and the upper portion face, the smooth face that jets out of its definition is formed with the upper portion depressed part, the emitting diode chip disposes inside the below of undercut portion or its, the upper portion sunk part is in the upper portion of protective diode portion. The utility model provides an illuminator is directional, and distribute broadly and homogeneous, luminescence properties are outstanding.
Description
Technical field
The utility model relates to a kind of light-emitting diode chip for backlight unit and comprises its light-emitting device, particularly relates to a kind ofly comprising the light-emitting diode chip for backlight unit of protection component and comprising the light-emitting device of light-emitting component and lens.
Background technology
Light-emitting diode is a kind of inorganic semiconductor element, can send the light of electronics and hole-recombination generation, and in recent years, people utilize the nitride-based semiconductor exploitation and manufacture light-emitting diode with direct band gap type feature.
Recently, be not only the back light unit (BackLightUnit) of Light-Emitting Diode TV (LEDTV), in many aspects such as illumination, automobile, luminous plate, infrastructure, the application of high brightness-High Power LED expands.Therefore, demand that is outstanding to heat dissipation characteristics, crystal-coated light-emitting diodes that current dissipation efficiency is outstanding increases.In addition, along with the raising of the power of light-emitting diode, require the electrostatic protective performance for the light-emitting diode breakage preventing electrostatic from causing further.
The light-emitting diode caused for preventing static discharge is damaged, generally speaking, in LED package operation, other protection component (such as Zener diode) and light-emitting diode is together configured in same wrapper.Such as, in Korean Patent Laid 10-2011-0128592 etc., a kind of LED package bag comprising light-emitting diode and Zener diode is disclosed.
But Zener diode is expensive, owing to having added the operation of attachment Zener diode, LED package process number and manufacturing expense have increased.In addition, Zener diode is loaded near light-emitting diode in LED package bag sticker, and therefore, due to the light absorption that Zener diode causes, the luminous efficiency of wrapper reduces, and thus the yield of LED package bag declines.Furthermore, the problem of the luminance nonuniformity one of LED package bag is there is according to the position of Zener diode.
[prior art document]
[patent documentation]
(patent documentation 1) KR10-2011-0128592A
Utility model content
[technical problem that will solve]
Problem to be solved in the utility model is to provide a kind of by providing the light-emitting diode chip for backlight unit that comprises protection component and can omitting the light-emitting diode chip for backlight unit of extra protection component and comprise its light-emitting device.
Another problem to be solved in the utility model is to provide a kind ofly possesses the light-emitting diode chip for backlight unit comprising protection component, and the characteristics of luminescence is homogeneous, points to the light-emitting device that angular width is wealthy.
[means of dealing with problems]
The light-emitting device of the utility model aspect comprises: light-emitting diode chip for backlight unit, it protection diode portions comprising diode portion and be connected with described diode portion inverse parallel; And lens, it is positioned on described light-emitting diode chip for backlight unit; Described lens comprise: bottom surfaces, and it is formed with undercut portion, and the definition of described undercut portion is for the plane of incidence of the light incidence from light-emitting diode chip for backlight unit release; And upper side, its definition, for the face of described light injection, is formed with upper recess portion; Described light-emitting diode chip for backlight unit is configured at below or its inside in described undercut portion, and the described protection diode portions of described light-emitting diode chip for backlight unit is positioned at the below in described upper recess portion.
Therefore, the sensing of the light of the upper side being discharged into lens can be made to distribute homogeneous, the minimise issues that the dark portion occurred because of protection diode portions is brought out can be made.
Described protection diode portions can be positioned at the central part of described light-emitting diode chip for backlight unit, and described upper recess portion can be positioned at the central part of described upper side.
And then the central part in described upper recess portion and described protection diode portions can be positioned on the imaginary lens centre axis above perpendicular to described light-emitting diode chip for backlight unit.
In several embodiments, described diode portion and described protection diode portions can comprise the first conductive-type semiconductor layer respectively; And table top, be positioned on described first conductive-type semiconductor layer, and comprise the second conductive-type semiconductor layer and active layer, described table top comprises the first table top being positioned at described diode portion and the second table top being positioned at described protection diode portions.
First conductive-type semiconductor layer of described diode portion and the second conductive-type semiconductor layer, can be electrically connected with the second conductive-type semiconductor layer of described protection diode portions and the first conductive-type semiconductor layer respectively.
In addition, described light-emitting diode chip for backlight unit can comprise: Second-Type contact electrode, and it is positioned on described first table top and the second table top; First insulating barrier, it covers described Second-Type contact electrode, described diode portion and described protection diode portions, and comprises the first peristome that described first conductive-type semiconductor layer is partly exposed and the second peristome that described Second-Type contact electrode is partly exposed; First type pad electrode, it covers described first insulating barrier at least in part, the first conductive-type semiconductor layer of described diode portion is electrically connected on, the Second-Type contact electrode be electrically connected in described protection diode portions by described second peristome by described first peristome; And Second-Type pad electrode, it is electrically connected on the first conductive-type semiconductor layer of described protection diode portions by described first peristome, the Second-Type contact electrode be electrically connected in described diode portion by described second peristome.
Described protection diode portions can be positioned at the central part of described light-emitting diode chip for backlight unit, is surrounded by described diode portion.
Make the first peristome that the first conductive-type semiconductor layer of described diode portion exposes, can be formed along the gabarit fringe region of described light-emitting diode chip for backlight unit.
In addition, make the first peristome that the first conductive-type semiconductor layer of described diode portion exposes, can also formed from described gabarit fringe region to the region of described protection diode portions side.
In other embodiments, described light-emitting diode chip for backlight unit can also comprise the second insulating barrier, described second insulating barrier covers described first type pad electrode, described Second-Type pad electrode and described first insulating barrier at least in part, and the second insulating barrier comprises the 3rd peristome and the 4th peristome that make described first type pad electrode and Second-Type pad electrode expose respectively.
Described light-emitting device also can comprise substrate, and it for described light-emitting diode chip for backlight unit attachment, and comprises lead-in wire; Described first type pad electrode can be gone between with one by described 3rd peristome and be electrically connected; Described Second-Type pad electrode can be gone between with another by described 4th peristome and be electrically connected.
Described light-emitting device also can comprise solder, and it makes described first type pad electrode and Second-Type pad electrode bond with lead-in wire.
In other embodiments, described light-emitting diode chip for backlight unit can also comprise: the first projection, and it is electrically connected with the first type pad electrode by described 3rd peristome; And second projection, it is electrically connected with Second-Type pad electrode by described 4th peristome.
In addition, described light-emitting diode chip for backlight unit also can comprise the fin be positioned on described second insulating barrier, and described fin can between described first projection and the second projection.
In several embodiments, described undercut portion can have from its entrance more to the shape that upper width is narrower.
The vertical cross-section in described undercut portion can be the shape and butt shape figure that upper end vertex is truncated.
The upper side of described lens can comprise the inside face at the center surrounding described depressed part and surround the exterior face of described inside face; The height of described inside face and exterior face connecting position can correspond to the peak of described lens.
Described lens also can comprise the flange between described upper side and bottom surfaces.
Described light-emitting device can also comprise: substrate, and it is for described light-emitting diode chip for backlight unit attachment; And reflector plate, it is positioned on described substrate, covers the side of described light-emitting diode chip for backlight unit.
The utility model light-emitting diode chip for backlight unit on the other hand comprises: diode portion; And protection diode portions, it is connected with described diode portion inverse parallel; Described protection diode portions is positioned at the central part of described light-emitting diode chip for backlight unit.
Described diode portion and described protection diode portions can comprise respectively: the first conductive-type semiconductor layer; And table top, be positioned on described first conductive-type semiconductor layer, and comprise the second conductive-type semiconductor layer and active layer, described table top comprises the first table top being positioned at described diode portion and the second table top being positioned at described protection diode portions.
Described light-emitting diode chip for backlight unit can also comprise: Second-Type contact electrode, and it is positioned on described first table top and the second table top; First insulating barrier, it covers described Second-Type contact electrode, described diode portion and described protection diode portions, and comprises the first peristome that described first conductive-type semiconductor layer is partly exposed and the second peristome that described Second-Type contact electrode is partly exposed; First type pad electrode, it covers described first insulating barrier at least in part, the first conductive-type semiconductor layer of described diode portion is electrically connected on, the Second-Type contact electrode be electrically connected in described protection diode portions by described second peristome by described first peristome; And Second-Type pad electrode, it is electrically connected on the first conductive-type semiconductor layer of described protection diode portions by described first peristome, the Second-Type contact electrode be electrically connected in described diode portion by described second peristome.
In addition, described protection diode portions can be surrounded by described diode portion.
Make the first peristome that the first conductive-type semiconductor layer of described diode portion exposes, can be formed along the gabarit fringe region of described light-emitting diode chip for backlight unit.
And then, make the first peristome that the first conductive-type semiconductor layer of described diode portion exposes, can also formed from described gabarit fringe region to the region of described protection diode portions side.
In other embodiments, described light-emitting diode chip for backlight unit can also comprise the second insulating barrier, it covers described first type pad electrode, described Second-Type pad electrode and described first insulating barrier at least in part, comprises the 3rd peristome and the 4th peristome that make described first type pad electrode and Second-Type pad electrode expose respectively.
Described light-emitting diode chip for backlight unit can also comprise: the first projection, and it is electrically connected with the first type pad electrode by described 3rd peristome; And second projection, it is electrically connected with Second-Type pad electrode by described 4th peristome.
In addition, described light-emitting diode chip for backlight unit also can comprise the fin be positioned on described second insulating barrier; Described fin can between first and second projection described.
[effect of utility model]
According to the utility model, a kind of light-emitting diode chip for backlight unit comprising protection diode portions in a chip can be provided, thus without the need to being equipped with extra protection component in light-emitting device.Therefore, it is possible to reduce the manufacturing cost of light-emitting device, manufacturing process also can simplify, and operation yield can improve.
In addition, provide the position of a kind of protection diode portions PR corresponding to the dark portion of light-emitting diode chip for backlight unit, the light-emitting device of proper alignment perpendicular to lens upper recess portion's central part.Therefore; the sensing of the light being discharged into lens upper side 340 can be made to distribute homogeneous; in light-emitting diode chip for backlight unit; the luminous homogeneity decline realization that can occur because of the protection dark portion that formed of diode portions can be made to minimize; when light-emitting device is luminous, can effectively prevent light from concentrating on the central part top of lens further.
Accompanying drawing explanation
Fig. 1 (a), Fig. 1 (b) are for illustration of the light-emitting diode chip for backlight unit of the utility model embodiment and the vertical view of manufacture method thereof and profile to Fig. 6 (a), Fig. 6 (b).
Fig. 7 (a), Fig. 7 (b) are for illustration of the light-emitting diode chip for backlight unit of another embodiment of the utility model and the vertical view of manufacture method thereof and profile.
Fig. 8 (a), Fig. 8 (b) are for illustration of the light-emitting diode chip for backlight unit of another embodiment of the utility model and the vertical view of manufacture method thereof and profile.
Fig. 9 to Figure 11 is the profile of light-emitting device for illustration of another embodiment of the utility model, stereogram and amplification profile.
Embodiment
With reference to the accompanying drawings, embodiment of the present utility model is described in detail.The embodiment introduced below exemplarily provides to can fully pass on thought of the present utility model to the utility model those skilled in the art.Therefore, the utility model is not limited to the embodiment of following explanation, also can specialize with other form.And in the accompanying drawings, conveniently, the width, length, thickness etc. of inscape also can exaggerate performance.In addition, when be recited as an inscape " top " of other inscape or " above " time, not only comprise the situation of each several part on " the direct top " of other parts or " directly ", be also included within the situation also having other inscape between each inscape and other inscape.In specification full text, identical reference marks represents identical inscape.
Fig. 1 (a), Fig. 1 (b) are for illustration of the light-emitting diode chip for backlight unit of the utility model embodiment and the vertical view of manufacture method thereof and profile to Fig. 6 (a), Fig. 6 (b).Specifically, the light-emitting diode chip for backlight unit of Fig. 6 (a), Fig. 6 (b) can manufacture according to the manufacture method be described with reference to Fig. 1 (a), Fig. 1 (b) to Fig. 6 (a), Fig. 6 (b).In various figures, (a) diagrammatic top plan view, (b) diagram corresponds to the part section of A-A line in described vertical view.
As shown in Fig. 1 (a), Fig. 1 (b), on growth substrate 110, form the ray structure body 120 comprising the first conductive-type semiconductor layer 121, active layer 123, second conductive-type semiconductor layer 125.
As long as the substrate that growth substrate 110 can make ray structure body 120 grow, then not limiting, such as, can be sapphire substrate, silicon carbide substrate, silicon substrate, gallium nitride base board, aluminium nitride substrate etc.In the present embodiment, growth substrate 110 can be the sapphire substrate (PatternedSapphireSubstrate is called for short PSS) of patterning.
Ray structure body 120 can pass through the first conductive-type semiconductor layer 121, active layer 123 and the second conductive-type semiconductor layer (125) and grows successively and formed.Ray structure body 120 can comprise nitride-based semiconductor, metallorganic chemical vapor deposition (Metal-organicChemicalVaporDePosition can be utilized, be called for short MOCVD), hydride gas-phase epitaxy (HydrideVaporPhaseEpitaxy, be called for short HVPE), the known nitride semiconductor growth layer method of common technical staff such as molecular beam epitaxy (MolecularBeamEpitaxy, be called for short MBE) and being formed.In addition, before making the first conductive-type semiconductor layer 121 growth, also resilient coating (not shown) can be formed on growth substrate 110.
First conductive-type semiconductor layer 121 and the second conductive-type semiconductor layer 125 can have mutually opposite conductivity type.Such as, the first conductive-type semiconductor layer 121 can comprise the impurity of such as Si, is doping to N-shaped, similar, and the second conductive-type semiconductor layer 125 can comprise the impurity of such as Mg, is doping to p-type.
Next, with reference to Fig. 2 (a), Fig. 2 (b), patterning is carried out to ray structure body (120), form the table top M1 comprising active layer 123 and the second conductive-type semiconductor layer 125, M2, and, at table top M1, M2 upper formation Second-Type contact electrode 130.Carry out patterning to ray structure body 120 to have nothing to do with the order forming Second-Type contact electrode 130.
Patterning is carried out to ray structure body 120, such as, can comprise and utilize photoetching and etching work procedure and partly remove ray structure body 120.By carrying out patterning to ray structure body 120, can form table top M1, M2, the side of table top M1, M2 can use the technology of such as Photoresist reflow and be formed obliquely.The extraction efficiency of the light that the tilted shape of table top M1, M2 side makes active layer 123 discharge improves.
Table top M1, M2 can comprise the first table top M1 and the second table top M2, and for forming table top M1, M2 and partly eliminate the part of ray structure body (120), can be formed with the region 120a partly exposed for the first conductive-type semiconductor layer 121.
First table top M1 and the second table top M2 can be spaced from each other, and the second table top M2 can be formed with the form of surrounding the first table top (M1).Therefore, the second table top M2 can be positioned at the central part of light-emitting diode chip for backlight unit.First table top M1 as shown in the figure, can be integrally formed single table top.At the first table top M1 periphery, the region 120a exposed for the first conductive-type semiconductor layer 121 can be formed, according to the form of the described region 120a exposed, the form of the first table top M1 can be determined.Such as, as shown in the figure, the region 120a that the first conductive-type semiconductor layer 121 exposes can be formed along the marginal portion of light-emitting diode chip for backlight unit, and then, also can also formed from described marginal portion to the part of the second table top M2 side.
But, the utility model is not defined in this, and the first table top M1 also can comprise multiple table top, and the region 120a that the first conductive-type semiconductor layer 121 exposes also can diversely be out of shape.In addition, as described later, the first table top M1 can correspond to the light-emitting zone of diode portion LR, and the second table top M2 can correspond to protection diode portions PR region.Therefore, the first table top M1 diversely can be out of shape according to the light-emitting zone that will define.
Second-Type contact electrode 130, in the upper formation of table top M1, M2, covers above the second conductive-type semiconductor layer 125 at least in part, with the second conductive-type semiconductor layer 125 ohmic contact.Particularly Second-Type contact electrode 130 can cover the major part above the second conductive-type semiconductor layer 125, and therefore, the current dissipation efficiency in the second conductive-type semiconductor layer 125 can improve.
Second-Type contact electrode 130 can with the second conductive-type semiconductor layer 125 ohmic contact.Therefore, Second-Type contact electrode 130 can comprise can with the material of the nitride semiconductor layer ohmic contact of the second conductivity type, when the second conductivity type is p-type, can comprise can with the conductive material of p-type nitride semiconductor layer ohmic contact.Such as, Second-Type contact electrode 130 can comprise metal or electroconductive oxide etc.
Specifically, Second-Type contact electrode 130 can comprise the metal of light reflective, and now, Second-Type contact electrode 130 can comprise reflector (not shown) and cover the cover layer in described reflector.
Described reflector can comprise and has high reverse--bias degree and can form the metal of ohmic contact with the second conductive-type semiconductor layer 125, and such as, described reflector can comprise at least one in Ni, Pt, Pd, Rh, W, Ti, Al, Ag and Au.Described cover layer can prevent the phase counterdiffusion between described reflector with different material, and other outside material can be prevented to be diffused into described reflector and to cause described reflector to be damaged.Described cover layer such as can comprise at least one in Au, Ni, Ti, Cr.
Described reflector and cover layer can utilize the methods such as gold-plated or vapour deposition to be formed, and can utilize the method such as patterning or stripping and be formed in the position of hope.And then reflector and cover layer also can be formed by simple layer or multilayer.
Be different from this, Second-Type contact electrode 130 also can comprise transparent conductivity material.Described transparent conductivity material can form ohmic contact with the second conductive-type semiconductor layer 125, such as, can comprise at least one in ITO, ZnO, IZO and Ni/Au.When Second-Type contact electrode 130 comprises transparent conductivity material, the second insulating barrier 160 described later is formed as having reflection characteristic, thus can reflection function be replaced.
With reference to Fig. 3 (a), (b), separation (isolation) operation by region disconnecting ray structure body 120 can be performed.Separation circuit can comprise the first conductive-type semiconductor layer 121 below the region 120a that partly removes and expose and form separated region 120b, 120c.
Separation circuit can utilize photoetching and etching work procedure to perform.By separation circuit, the first conductive-type semiconductor layer 121 of table top M1, M2 periphery is partially removed, form separated region (120b, 120c), so, be separated into the semiconductor structure bodies 120 comprising the first table top M1 and the semiconductor structure bodies 120 comprising the second table top M1.Particularly; by means of separated region 120b; ray structure body 120 at least can be divided into two parts, and the semiconductor structure bodies 120 comprising the first table top M1 is defined as diode portion LR, and the semiconductor structure bodies 120 comprising the second table top M2 is defined as protecting diode portions PR.In addition, diode portion LR is spaced from each other with protection diode portions PR.
Diode portions PR is relative to growth substrate 110 in protection, can be positioned at central part, and now, diode portion LR can to surround the form configuration of protection diode portions PR.
On the other hand, diode portion LR and protection diode portions PR can comprise respectively and not form the first table top M1 and the second table top M2 and first conductive-type semiconductor layer 121 region of exposing.Particularly in diode portion LR, the region that the first conductive-type semiconductor layer 121 exposes can be configured to encirclement first table top M1.
Next; with reference to Fig. 4 (a), Fig. 4 (b); the first insulating barrier 140 can be formed; it covers diode portion LR, protection diode portions PR and Second-Type contact electrode 130 at least in part; and comprise the first peristome 140a; 140c and the second peristome 140b, 140d.
First insulating barrier 140 can the other parts outside peristome 140a-140d region integrally be formed.Now, the first peristome and the 3rd peristome 140a, 140c expose with can making the upper surface portion of the first conductive-type semiconductor layer 121, and the second peristome and the 4th peristome 140b, 140d expose with can making the upper surface portion of Second-Type contact electrode 130.
Specifically, the first peristome 140a can make first conductive-type semiconductor layer 121 of diode portion LR expose, and the first peristome 140a can be formed along the gabarit edge of light-emitting diode chip for backlight unit, is formed with the form of surrounding the first table top M1.And then the first peristome 140a can also be formed to protecting the part of diode portions PR side in the gabarit marginal portion from light-emitting diode chip for backlight unit.On the other hand, the 3rd peristome 140c can make first conductive-type semiconductor layer 121 of protection diode portions PR expose at least in part.
Second peristome 140b can make the Second-Type contact electrode 130 of diode portion LR expose, now, the second peristome 140b as shown in the figure, can tilted configuration in a side of light-emitting diode chip for backlight unit.On the other hand, the 4th peristome 140d can make the Second-Type contact electrode 130 of protection diode portions PR expose at least in part.Now, the 3rd peristome 140c can between the second peristome 140b and the 4th peristome 140d.
First insulating barrier 140 can comprise the material of insulating properties, such as, can comprise SiO2 or SiNx.And then the first insulating barrier 140 can comprise multilayer, the distributed Bragg reflector that the different metaboly of refractive index is stacked also can be comprised.Particularly when Second-Type contact electrode 130 comprises transparent conductivity material, the first insulating barrier 140 can comprise reflecting material or distributed Bragg reflector.Therefore, the first insulating barrier 140 plays the effect that light is reflected, and the luminous efficiency of light-emitting diode can be made to improve.First insulating barrier 140 can be formed by various method according to formation material, such as, vapour deposition operation etc. can be utilized to form the first insulating barrier 140.
Next, with reference to Fig. 5 (a), Fig. 5 (b), the first insulating barrier 140 forms the first type pad electrode 150 and the Second-Type pad electrode 155 of covering first insulating barrier 140.Now, the first type pad electrode 150 is spaced from each other with Second-Type pad electrode 155, can be formed with spaced apart regions 150a between which.
First type pad electrode 150 can be formed as covering the first insulating barrier 140 comprehensively, in addition, can be full of the first peristome 140a and the 4th peristome 140d.First type pad electrode 150 and can protect first conductive-type semiconductor layer 121 of diode portions PR to insulate with Second-Type contact electrode 130, therefore, is not formed in the position of the second peristome 140b and the 3rd peristome 140c.
Therefore, the first type pad electrode 150 can be electrically connected with first conductive-type semiconductor layer 121 of diode portion LR by the first peristome 140a, particularly can with the first conductive-type semiconductor layer 121 ohmic contact.In addition, the first type pad electrode 150 can be electrically connected with the Second-Type contact electrode 130 of protection diode portions PR by the 4th peristome 140d.Therefore, first conductive-type semiconductor layer 121 of diode portion LR is electrically connected by the first type pad electrode 150 with second conductive-type semiconductor layer 125 of protection diode portions PR.
Second-Type pad electrode 155 and the first type pad electrode 150 separate, and can be formed on the region not forming the first type pad electrode 150.That is, Second-Type pad electrode 155 can not form the second peristome and the 3rd peristome 140b of the first type pad electrode 150, and 140c region is formed, and fills the second peristome and the 3rd peristome 140b, 140c.
Therefore; Second-Type pad electrode 155 can be electrically connected with the Second-Type contact electrode 130 of diode portion LR by the second peristome 140b; can be electrically connected, particularly with described first conductive-type semiconductor layer 121 ohmic contact with first conductive-type semiconductor layer 121 of protection diode portions PR by the 3rd peristome 140c.Therefore, the Second-Type contact electrode 130 of diode portion LR is electrically connected by Second-Type pad electrode 155 with first conductive-type semiconductor layer 121 of protection diode portions PR.
As mentioned above, first conductive-type semiconductor layer of diode portion LR and the second conductive-type semiconductor layer 121,125 are electrically connected on the second conductive-type semiconductor layer and first conductive-type semiconductor layer 125,121 of protection diode portions PR respectively.Therefore, diode portion LR is connected with the mutual inverse parallel of protection diode portions PR.Therefore; when the light-emitting diode chip for backlight unit of the present embodiment operates; protection diode portions PR can play the similar function of the Zener diode that is connected to diode portion LR with inverse parallel, can prevent damage or the breakage of the diode portion LR caused because of static discharge etc.
On the other hand, the first type pad electrode 150 can comprise the metallics that can form ohmic contact relative to nitride-based semiconductor with Second-Type pad electrode 155, and then, highly reflective characteristic can be had.Such as, the first type pad electrode 150 can be formed with the simple layer or multilayer that comprise at least one in Ni, Pt, Pd, Rh, W, Ti, Al, Cr, Ag and Au with Second-Type pad electrode 155.
Comprise the first type pad electrode 150 of metallics and Second-Type pad electrode 155 to be formed the first insulating barrier (140) is upper by methods such as gold-plated, vapour depositions.In addition, the first type pad electrode 150 also can be formed with Second-Type pad electrode 155 simultaneously, now, can comprise mutually identical material.But, the utility model is not defined in this.
Next, with reference to Fig. 6 (a), Fig. 6 (b), the second insulating barrier 160 covering the first type pad electrode 150 and Second-Type pad electrode 155 at least in part can be formed.Therefore, the light-emitting diode chip for backlight unit 100a of the crystal covering type as shown in Fig. 6 (a), Fig. 6 (b) is provided.
Second insulating barrier 160 can comprise the material of insulating properties, such as, can comprise SiO2 or SiNx.And then the second insulating barrier 160 can comprise multilayer, the distributed Bragg reflector that the different metaboly of refractive index is stacked also can be comprised.On the other hand, the second insulating barrier 160 can be formed with the material mutually different from the first insulating barrier 140.Such as, the first insulating barrier 140 can comprise SiO2, and the second insulating barrier 160 can comprise SiNx.In addition, the thickness of the first insulating barrier 140 can be thicker than the thickness of the second insulating barrier 160.First insulating barrier 140 is formed relatively thicklyer, thus ray structure body 120 more effectively can be protected on electrically, the damage of the ray structure body 120 that can more effectively prevent outside moisture from causing.
Second insulating barrier 160 can be formed by various method according to formation material, such as, vapour deposition operation etc. can be utilized to form the second insulating barrier 160.And then the 5th peristome 160a and the 6th peristome 160b partly can etch the second insulating barrier 160 and be formed, and is different from this, also after the vapour deposition of the second insulating barrier 160, can utilizes stripping process and formed.
Second insulating barrier 160 can comprise the 5th peristome 160a that the first type pad electrode 150 is partly exposed and the 6th peristome 160b that Second-Type pad electrode 155 is partly exposed.The part that first type pad electrode 150 is exposed respectively by the 5th peristome 160a and the 6th peristome 160b with Second-Type pad electrode 155, is provided in the region that can be electrically connected with external power source when light-emitting diode chip for backlight unit 100a operates.That is, the light-emitting diode chip for backlight unit 100a of the present embodiment does not comprise projection, thus can be applied to the application of the light-emitting diode chip for backlight unit 100a requiring small and exquisite form.
If external power source is supplied to light-emitting diode chip for backlight unit 100a by the first type pad electrode 150 and Second-Type pad electrode 155, then in active layer 123 region of diode portion LR, discharge light by the compound in electronics and hole.On the other hand, because protection diode portions PR is connected with diode portion LR inverse parallel, even if thus plant-grid connection light-emitting diode chip for backlight unit 100a, also luminous function is not caused.Therefore, when the light-emitting diode chip for backlight unit 100a of the present embodiment operates, in protection diode portions PR region, there is not luminescence, form dark portion in protection diode portions PR region.
On the other hand, growth substrate 110 also can be removed from the first conductive-type semiconductor layer 121.Growth substrate 110 can utilize person skilled in art (hereinafter referred to as " technical staff ") known technology, is separated removes from ray structure body 120.Substrate 110 can pass through the method for physics and/or chemistry and is separated from ray structure body or removes, and such as, the methods such as the stripping of laser lift-off, chemical stripping, pressure or grinding can be utilized to be separated or removal.
Hereinafter, the light-emitting diode chip for backlight unit 100a of the present embodiment is described.But, for the formation illustrated in the above-described embodiments, detailed.
The light-emitting diode chip for backlight unit 100a of the utility model embodiment comprises the protection diode portions PR that diode portion LR and inverse parallel are connected to diode portion LR.Now, protection diode portions PR can be positioned at the central part of light-emitting diode chip for backlight unit 100a, and protection diode portions PR can to surround the form configuration of diode portion LR.
Diode portion LR and protection diode portions PR can comprise respectively: the first conductive-type semiconductor layer 121; And table top M1, M2, it is positioned on the first conductive-type semiconductor layer 121, comprises active layer 123 and is positioned at the second conductive-type semiconductor layer 125 on active layer 123.Table top M1, M2 can comprise the first table top M1 being positioned at diode portion LR and the second table top M2 being positioned at protection diode portions PR.
And then, light-emitting diode chip for backlight unit 100a can comprise and is positioned at table top M1, Second-Type contact electrode 130 on M2, cover Second-Type contact electrode 130 with table top M1, M2 and comprise the first insulating barrier 140, first type pad electrode 150 and Second-Type pad electrode 155 of the peristome that the first conductive-type semiconductor layer 121 and Second-Type contact electrode 130 are partly exposed.Now; first conductive-type semiconductor layer 121 of diode portion LR can be electrically connected by means of the first type pad electrode 150 with the Second-Type contact electrode 130 of protection diode portions PR, and protection first conductive-type semiconductor layer 121 of diode portions PR can be electrically connected by means of Second-Type pad electrode 155 with first conductive-type semiconductor layer 121 of diode portion LR.Therefore, diode portion LR can be connected mutually with protection diode portions PR in inverse parallel.
In addition, light-emitting diode chip for backlight unit 100a also can comprise the second insulating barrier 160, it partly covers the first type pad electrode 150 and Second-Type pad electrode 155, and comprises the peristome that the first type pad electrode 150 and Second-Type pad electrode 155 are partly exposed respectively.
As mentioned above, according to the present embodiment, the crystal-coated light-emitting diodes chip 100a that protection diode portions PR and diode portion LR can be contained in a chip can be provided.If utilize this light-emitting diode chip for backlight unit 100a, then without the need to extra protection component, the light-emitting diode that also can prevent static discharge from causing is damaged.
Fig. 7 (a), Fig. 7 (b) are for illustration of the light-emitting diode chip for backlight unit of another embodiment of the utility model and the vertical view of manufacture method thereof and profile.
The light-emitting diode chip for backlight unit 100b of the embodiment of Fig. 7 (a), Fig. 7 (b) is roughly similar with the light-emitting diode chip for backlight unit 100a of Fig. 6 (a), Fig. 6 (b), but there are differences also comprising on the first projection 171 and this aspect of the second projection 173.Be main being described below with difference, omit the detailed description to identical formation.
If with reference to Fig. 7 (a), Fig. 7 (b), light-emitting diode chip for backlight unit 100b, can by also forming the first projection 171 and the second projection 173 provides on the basis that the light-emitting diode chip for backlight unit 100a of Fig. 6 (a), Fig. 6 (b) is formed.
First projection 171 and the second projection 173 can be formed on the second insulating barrier 160.First projection 171 can fill the 5th peristome 160a, is electrically connected with the first type pad electrode 150, and the second projection 173 can fill the 6th peristome 160b, is electrically connected with Second-Type pad electrode 155.Therefore, first and second projection 171,173 can play the electrode effect externally to light-emitting diode supply power supply.In addition, the first projection 171 and the second projection 173 can electric insulations, are spatially spaced from each other.
First projection 171 and the second projection 173 such as can comprise the adhesive layers such as Ti, Cr, Ni and the contour conductive metal layer of Al, Cu, Ag or Au, described metal by vapour deposition, the method such as gold-plated, the second insulating barrier 160 can form the first projection 171 and the second projection 173.In addition, the first projection 171 also can be used by identical operation with the second projection 173 simultaneously.But, the utility model is not defined in this.
Fig. 8 (a), Fig. 8 (b) are for illustration of the light-emitting diode chip for backlight unit of another embodiment of the utility model and the vertical view of manufacture method thereof and profile.
Light-emitting diode chip for backlight unit 100c and Fig. 7 (a) of the embodiment of Fig. 8 (a), Fig. 8 (b), the light-emitting diode chip for backlight unit 100b of Fig. 7 (b) are roughly similar, but there are differences also comprising in fin 180 this point.Be main being described below with difference, omit the detailed description to identical formation.
On the light-emitting diode chip for backlight unit 100b basis of Fig. 7 (a), Fig. 7 (b), can provide by also forming fin 180 with reference to Fig. 8 (a), Fig. 8 (b), light-emitting diode chip for backlight unit 100c.
Fin 180 can be formed on the second insulating barrier 160, can with ray structure body 120 electric insulation.In addition, fin 180 can be positioned at first and second projection 171, between 173, can with described projection 171,173 electric insulation.Fin 180 can utilize the material that heat conductivity is high, such as the metal of such as Cu, utilizes the methods such as gold-plated or vapour deposition to be formed.
The light-emitting diode chip for backlight unit 100c of the present embodiment also comprises fin 180, thus the heat occurred during luminescence can be made effectively to discharge, and particularly can improve high power, life-span of large-area crystal-coated light-emitting diodes chip 100c and reliability.
Fig. 9 to Figure 11 is the profile of light-emitting device for illustration of another embodiment of the utility model, stereogram and amplification profile.Specifically, Fig. 9 and Figure 10 is the profile and the stereogram that roughly illustrate described light-emitting device, and Figure 11 is the enlarged drawing of a part of B of enlarged icon Fig. 9.
The light-emitting device of the present embodiment comprises light-emitting diode chip for backlight unit 100 and lens 300.And then described light-emitting device also can comprise the pedestal 200 supporting light-emitting diode chip for backlight unit 100.
Light-emitting diode chip for backlight unit 100 can be the crystal-coated light-emitting diodes chip of the protection diode portions comprising diode portion and be connected with described diode portion inverse parallel.Particularly light-emitting diode chip for backlight unit 100 can be the light-emitting component that diode portion and protection diode portions are all formed in a chip.In addition, light-emitting diode chip for backlight unit 100 has flip-chip form, and the wire thus for light-emitting diode chip for backlight unit 100 is electrically connected with substrate 210 can omit.
Light-emitting diode chip for backlight unit 100 can comprise the light-emitting diode chip for backlight unit 100a of embodiment of Fig. 6 (a), Fig. 6 (b), Fig. 7 (a), Fig. 7 (b) or Fig. 8 (a), Fig. 8 (b), 100b, 100c.In the present embodiment, as shown in figure 11, with light-emitting diode chip for backlight unit 100 be Fig. 6 (a), the situation of the light-emitting diode chip for backlight unit 100a of Fig. 6 (b) is described.Therefore, in light-emitting diode chip for backlight unit 100a, protection diode portions PR can be positioned at its central part.But, the utility model is not defined in this, and the light-emitting diode chip for backlight unit not exceeding other form of technological thought scope of the present utility model is also included in the utility model.
Pedestal 200 can comprise substrate 210, in addition, can also comprise the reflector plate 220 be positioned on substrate 210.
Substrate 210 can be conductivity or insulative substrate, such as, can be polymeric substrates, ceramic substrate, metal substrate or printed circuit board (PCB).In addition, crystal-coated light-emitting diodes chip 100 is mounted on substrate 210, and thus substrate 210 can play the function of chip attachment component.And then substrate 210 can play the supporting member effect can laid for lens 300.
Substrate 210 can comprise the lead-in wire (not shown) that can be electrically connected with crystal-coated light-emitting diodes 100.When substrate 210 is printed circuit board (PCB), printed circuit can with described go between corresponding.
Such as, as shown in figure 11, light-emitting diode chip for backlight unit 100a can be mounted on substrate 210, and the first type pad electrode 150 can configure and be bonded in substrate 210 by means of the conductive adhesive material 411,413 of such as solder with Second-Type pad electrode 155.Now, substrate 210 and light-emitting diode chip for backlight unit 100a conduct electricity connection mutually by means of conductive adhesive material 411,413.When substrate 210 comprises lead-in wire, conductive adhesive material 411,413 can contact described lead-in wire, conduction connection substrate 210 and light-emitting diode chip for backlight unit 100a.
Reflector plate 220 between lens 300 and substrate 210, can adjoin and be positioned at light-emitting diode chip for backlight unit 100 side, and then, can connect with the side of light-emitting diode chip for backlight unit 100.Reflector plate 220 can be coated with the white reflective material of high reflectance, makes it possible to the light of the wide wave-length coverage in reflect visible light region.Therefore, reflector plate 220 can make light reflex to lens 300 inside.
Lens 300 comprise bottom surfaces 330 and upper side 340, and can also comprise flange 350.
Can be formed with undercut portion 320 in the bottom surfaces 330 of lens 300, light-emitting diode chip for backlight unit 100 can be configured at below described undercut portion 320.Be different from this, light-emitting diode chip for backlight unit 100 also can be configured in undercut portion 320.
The medial surface in undercut portion 320 is defined as the plane of incidence 330 inciding lens 300 for the light discharged from light-emitting diode chip for backlight unit 100.The plane of incidence 330 comprises side 331, and then, also can comprise the upper surface 333 being positioned at top, side 331.Undercut portion 320 can have the shape that width narrows from lower entrances along direction upwards, and therefore, the side 331 of the plane of incidence 330 can tilt.Now, the shape that the gradient that side 331 can have its broken line reduces, but be different from this, also can have the shape that its broken line gradient is set or increase.
The upper surface 333 of the plane of incidence 330 can have smooth shape, and therefore, the vertical direction cross section in undercut portion 320 can have form like the broken end shape graphics class that is truncated with summit.But, the utility model is not defined in this, and the upper surface 333 of the plane of incidence 330 also can have the shape of protrusion.
The shape that the upper side 340 of lens 300 has can make to incide that lens 300 are inner and light that is that release has broad sensing angle, has homogeneous sensing distribution.As shown in the figure, the upper side 340 of lens 300 can comprise upper recess portion 342, and described upper recess portion 342 can be positioned at the central area of lens 300, in the central authorities in upper recess portion 342, can be formed with the central part 345 in upper recess portion.And then the upper side 340 of lens 300 also can comprise the inside face 341 of the central part 345 surrounding upper recess portion and surround the exterior face 343 of inside face 341.
Inside face 341 and exterior face 343 can have convex shape respectively.The gradient of the broken line of inside face 341 can be mutually contrary with the gradient of the broken line of exterior face 343.If illustrated, such as, below lens 300, be defined as x-axis, any space that imaginary central shaft V is defined as y-axis, the gradient of inside face 341 can have on the occasion of, the gradient of exterior face 343 can have negative value.Therefore, inside face 341 can be corresponding with the peak of lens 300 with the height of the position that exterior face 343 connects.But, the utility model is not defined in this, also can consider to point to angle etc., the diversely shape in deformable upper part face 340.
By means of upper recess portion 342 and the inside face 341 of upper side 340, make the light advancing to lens 300 near central regions be distributed to outside, the light quantity that exterior face 343 makes the outside to lens 300 central shaft V penetrate increases.In addition, generally speaking, maximum to the light quantity of the upper direction perpendicular to light-emitting diode from the light of light-emitting diode release.The lens 300 of the present embodiment are formed with upper recess portion 342 at central part, make the light to the upper direction perpendicular to light-emitting diode, to side-scattered or reflection, thus can alleviate the light phenomenon intensive in the central area of light-emitting device.Comprehensive, incide lens 300 and release light and can have broad sensing angle, in addition, can be homogeneous based on the sensing distribution pointing to angle.
On the other hand, the upper recess portion 342 of lens 300 can be positioned at the top of light-emitting diode chip for backlight unit 100, particularly protects the top of diode portions.When protecting diode portions to be positioned at the central part of light-emitting diode chip for backlight unit 100, upper recess portion 342 can be positioned at the central part of the upper side 340 of lens 300.And then the central part 345 in upper recess portion all can be positioned on imaginary central shaft V line with protection diode portions.
Related to this, if be specifically described with reference to Figure 11, the protection diode portions PR of light-emitting diode chip for backlight unit 100a is positioned at the central part of light-emitting diode 100a.Correspondingly, upper recess portion 342 is positioned at the central part of lens 300.Therefore, the central part 345 in diode portions PR and upper recess portion 342 is protected can be arranged on the imaginary lens centre axle V line above perpendicular to light-emitting diode chip for backlight unit 100a.
As mentioned above, if the lens 300 of application the present embodiment, then make light to the vertical upper direction of light-emitting diode chip for backlight unit 100a to side-scattered or reflection, prevent light from concentrating on described part.Namely, the light of the central part release of light-emitting diode chip for backlight unit is induced other direction to being not vertical upper direction to discharge by lens 300, the degree of the light quantity thus discharged according to the central part of light-emitting diode chip for backlight unit, the luminous homogeneity of light-emitting device can not reduce, but it is broad and homogeneous that the sensing of light can be made to distribute.In addition, can more effectively prevent when light-emitting device is luminous, light concentrates on the central part top of lens 300.
Therefore; make the protection diode portions PR position corresponding to non-luminous dark portion in light-emitting diode chip for backlight unit 100a; perpendicular to central part 345 proper alignment in lens 300 upper recess portion, thus can make because of the dark portion of light-emitting diode chip for backlight unit 100a and the decline of contingent luminous homogeneity realize minimize.
Furthermore, light-emitting diode chip for backlight unit 100 comprises protection diode portions, does not thus need to be equipped with other protection component (such as, Zener diode) over the substrate 210.Therefore, can reduce the manufacturing cost of light-emitting device, manufacturing process simplifies, and the operation yield of light-emitting device can improve.
If refer again to Fig. 9 and Figure 10, flange 350 between upper side 340 and bottom surfaces 330, can limit the profile size of lens 300.In side and the bottom surfaces of flange 350, convex-concave pattern can be formed with, therefore, it is possible to make the light extraction efficiency of lens 300 improve.On the other hand, although not shown, can also be formed with bridge portion in the bottom of flange 350, described bridge portion is incorporated into substrate 210, can play the effect of fixed lens 300.
Above various embodiments of the present utility model is illustrated, but the utility model is not defined in described various embodiments, in the scope of technological thought not exceeding technical solutions of the utility model, can is diversely out of shape and changes.
Claims (28)
1. a light-emitting device, is characterized in that, comprising:
Light-emitting diode chip for backlight unit, it protection diode portions comprising diode portion and be connected with described diode portion inverse parallel; And
Lens, it is positioned on described light-emitting diode chip for backlight unit;
Described lens comprise:
Bottom surfaces, it is formed with undercut portion, and the definition of described undercut portion is for the plane of incidence of the light incidence discharged from described light-emitting diode chip for backlight unit; And
Upper side, its definition, for the face of described light injection, is formed with upper recess portion;
Described light-emitting diode chip for backlight unit is configured at below or its inside in described undercut portion, and the described protection diode portions of described light-emitting diode chip for backlight unit is positioned at the below in described upper recess portion.
2. light-emitting device according to claim 1, is characterized in that,
Described protection diode portions is positioned at the central part of described light-emitting diode chip for backlight unit,
Described upper recess portion is positioned at the central part of described upper side.
3. light-emitting device according to claim 2, is characterized in that,
The central part in described upper recess portion and described protection diode portions are positioned on the imaginary lens centre axis perpendicular to described light-emitting diode chip for backlight unit upper surface.
4. light-emitting device according to claim 1, is characterized in that,
Described diode portion and described protection diode portions comprise respectively:
First conductive-type semiconductor layer; And
Table top, is positioned on described first conductive-type semiconductor layer, and comprises the second conductive-type semiconductor layer and active layer,
Described table top comprises the first table top being positioned at described diode portion and the second table top being positioned at described protection diode portions.
5. light-emitting device according to claim 4, is characterized in that,
First conductive-type semiconductor layer of described diode portion and the second conductive-type semiconductor layer, be electrically connected with the second conductive-type semiconductor layer of described protection diode portions and the first conductive-type semiconductor layer respectively.
6. light-emitting device according to claim 5, is characterized in that,
Described light-emitting diode chip for backlight unit comprises:
Second-Type contact electrode, it is positioned on described first table top and described second table top;
First insulating barrier, it covers described Second-Type contact electrode, described diode portion and described protection diode portions, and comprises the first peristome that described first conductive-type semiconductor layer is partly exposed and the second peristome that described Second-Type contact electrode is partly exposed;
First type pad electrode, it covers described first insulating barrier at least in part, the first conductive-type semiconductor layer of described diode portion is electrically connected on, the described Second-Type contact electrode be electrically connected in described protection diode portions by described second peristome by described first peristome; And
Second-Type pad electrode, it is electrically connected on the first conductive-type semiconductor layer of described protection diode portions by described first peristome, the described Second-Type contact electrode be electrically connected in described diode portion by described second peristome.
7. light-emitting device according to claim 6, is characterized in that,
Described protection diode portions is positioned at the central part of described light-emitting diode chip for backlight unit, is surrounded by described diode portion.
8. light-emitting device according to claim 7, is characterized in that,
Making described first peristome that the first conductive-type semiconductor layer of described diode portion exposes, is formed along the gabarit fringe region of described light-emitting diode chip for backlight unit.
9. light-emitting device according to claim 8, is characterized in that,
Make described first peristome that the first conductive-type semiconductor layer of described diode portion exposes, also formed from described gabarit fringe region to the region of described protection diode portions side.
10. light-emitting device according to claim 6, is characterized in that,
Described light-emitting diode chip for backlight unit also comprises the second insulating barrier,
Described second insulating barrier covers described first type pad electrode, described Second-Type pad electrode and described first insulating barrier at least in part, and described second insulating barrier comprises the 3rd peristome and the 4th peristome that make described first type pad electrode and described Second-Type pad electrode expose respectively.
11. light-emitting devices according to claim 10, is characterized in that,
Also comprise substrate, it for described light-emitting diode chip for backlight unit attachment, and comprises lead-in wire;
Described first type pad electrode is electrically connected with described a lead-in wire by described 3rd peristome;
Described Second-Type pad electrode is electrically connected with going between described in another by described 4th peristome.
12. light-emitting devices according to claim 11, is characterized in that,
Also comprise solder, it makes described first type pad electrode and described Second-Type pad electrode and described lead-in wire bond.
13. light-emitting devices according to claim 10, is characterized in that,
Described light-emitting diode chip for backlight unit also comprises:
First projection, it is electrically connected with described first type pad electrode by described 3rd peristome; And
Second projection, it is electrically connected with described Second-Type pad electrode by described 4th peristome.
14. light-emitting devices according to claim 13, is characterized in that,
Described light-emitting diode chip for backlight unit also comprises the fin be positioned on described second insulating barrier;
Described fin is between described first projection and described second projection.
15. light-emitting devices according to claim 1, is characterized in that,
Described undercut portion has from its entrance more to the shape that upper width is narrower.
16. light-emitting devices according to claim 15, is characterized in that,
The vertical cross-section in described undercut portion is the shape that is truncated of upper end vertex and butt shape figure.
17. light-emitting devices according to claim 1, is characterized in that,
The described upper side of described lens comprises the inside face at the center surrounding described upper recess portion and surrounds the exterior face of described inside face;
The height of described inside face and described exterior face connecting position corresponds to the peak of described lens.
18. light-emitting devices according to claim 1, is characterized in that,
Described lens also comprise the flange between described upper side and described bottom surfaces.
19. light-emitting devices according to claim 1, is characterized in that, also comprise:
Substrate, it is for described light-emitting diode chip for backlight unit attachment; And
Reflector plate, it is positioned on described substrate, covers the side of described light-emitting diode chip for backlight unit.
20. 1 kinds of light-emitting diode chip for backlight unit, is characterized in that comprising:
Diode portion; And
Protection diode portions, it is connected with described diode portion inverse parallel;
Described protection diode portions is positioned at the central part of described light-emitting diode chip for backlight unit.
21. light-emitting diode chip for backlight unit according to claim 20, is characterized in that,
Described diode portion and described protection diode portions comprise respectively:
First conductive-type semiconductor layer; And
Table top, is positioned on described first conductive-type semiconductor layer, and comprises the second conductive-type semiconductor layer and active layer,
Described table top comprises the first table top being positioned at described diode portion and the second table top being positioned at described protection diode portions.
22. light-emitting diode chip for backlight unit according to claim 21, is characterized in that, also comprise:
Second-Type contact electrode, it is positioned on described first table top and described second table top;
First insulating barrier, it covers described Second-Type contact electrode, described diode portion and described protection diode portions, and comprises the first peristome that described first conductive-type semiconductor layer is partly exposed and the second peristome that described Second-Type contact electrode is partly exposed;
First type pad electrode, it covers described first insulating barrier at least in part, the first conductive-type semiconductor layer of described diode portion is electrically connected on, the described Second-Type contact electrode be electrically connected in described protection diode portions by described second peristome by described first peristome; And
Second-Type pad electrode, it is electrically connected on the first conductive-type semiconductor layer of described protection diode portions by described first peristome, the described Second-Type contact electrode be electrically connected in described diode portion by described second peristome.
23. light-emitting diode chip for backlight unit according to claim 20, is characterized in that,
Described protection diode portions is surrounded by described diode portion.
24. light-emitting diode chip for backlight unit according to claim 22, is characterized in that,
Make described first peristome that the first conductive-type semiconductor layer of described diode portion exposes, the gabarit fringe region along described light-emitting diode chip for backlight unit is formed.
25. light-emitting diode chip for backlight unit according to claim 24, is characterized in that,
Make described first peristome that the first conductive-type semiconductor layer of described diode portion exposes, also formed from described gabarit fringe region to the region of described protection diode portions side.
26. light-emitting diode chip for backlight unit according to claim 22, is characterized in that,
Also comprise the second insulating barrier, it covers described first type pad electrode, described Second-Type pad electrode and described first insulating barrier at least in part, comprises the 3rd peristome and the 4th peristome that make described first type pad electrode and described Second-Type pad electrode expose respectively.
27. light-emitting diode chip for backlight unit according to claim 26, is characterized in that, also comprise:
First projection, it is electrically connected with described first type pad electrode by described 3rd peristome; And
Second projection, it is electrically connected with described Second-Type pad electrode by described 4th peristome.
28. light-emitting diode chip for backlight unit according to claim 27, is characterized in that,
Also comprise the fin be positioned on described second insulating barrier;
Described fin is between described first projection and described second projection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140098258A KR20160015685A (en) | 2014-07-31 | 2014-07-31 | Light emitting device comprising protection device and light eimitting apparatus comprising the same |
| KR10-2014-0098258 | 2014-07-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204792904U true CN204792904U (en) | 2015-11-18 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520378962.0U Active CN204792904U (en) | 2014-07-31 | 2015-06-03 | Emitting diode chip and illuminator |
| CN201510300867.3A Active CN105322082B (en) | 2014-07-31 | 2015-06-03 | Light-emitting diode chip for backlight unit and light emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510300867.3A Active CN105322082B (en) | 2014-07-31 | 2015-06-03 | Light-emitting diode chip for backlight unit and light emitting device |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20160015685A (en) |
| CN (2) | CN204792904U (en) |
| TW (2) | TWI570881B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322082A (en) * | 2014-07-31 | 2016-02-10 | 首尔伟傲世有限公司 | Light emitting diode and light emitting device |
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|---|---|---|---|---|
| US9728698B2 (en) | 2014-06-03 | 2017-08-08 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
| US9577171B2 (en) | 2014-06-03 | 2017-02-21 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
| TWI608633B (en) * | 2015-12-15 | 2017-12-11 | 李乃義 | Light emitting diode device and method for manufacturing the same |
| CN110164857B (en) * | 2018-02-14 | 2024-04-09 | 晶元光电股份有限公司 | Light emitting device |
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| CN100524790C (en) * | 2004-02-02 | 2009-08-05 | 三垦电气株式会社 | Light-emitting semiconductor element and composite semiconductor device of protection element |
| CN102130287A (en) * | 2010-12-22 | 2011-07-20 | 晶科电子（广州）有限公司 | Light-emitting diode (LED) device with electrostatic damage protection function and manufacturing method thereof |
| DE102011011378A1 (en) * | 2011-02-16 | 2012-08-16 | Osram Opto Semiconductors Gmbh | Carrier substrate and method for the production of semiconductor chips |
| JP5772213B2 (en) * | 2011-05-20 | 2015-09-02 | サンケン電気株式会社 | Light emitting element |
| DE102011084363B4 (en) * | 2011-10-12 | 2022-12-22 | Pictiva Displays International Limited | Organic light emitting diode |
| JP5869961B2 (en) * | 2012-05-28 | 2016-02-24 | 株式会社東芝 | Semiconductor light emitting device |
| WO2014061940A1 (en) * | 2012-10-15 | 2014-04-24 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
| CN104769356B (en) * | 2012-10-30 | 2019-04-19 | 首尔半导体株式会社 | Lens and light emitting module for surface illumination |
| TWM461000U (en) * | 2013-04-26 | 2013-09-01 | Genesis Photonics Inc | Illumination apparatus |
| KR20160015685A (en) * | 2014-07-31 | 2016-02-15 | 서울바이오시스 주식회사 | Light emitting device comprising protection device and light eimitting apparatus comprising the same |
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2014
- 2014-07-31 KR KR1020140098258A patent/KR20160015685A/en not_active Application Discontinuation
-
2015
- 2015-06-03 TW TW104117884A patent/TWI570881B/en not_active IP Right Cessation
- 2015-06-03 CN CN201520378962.0U patent/CN204792904U/en active Active
- 2015-06-03 CN CN201510300867.3A patent/CN105322082B/en active Active
- 2015-06-03 TW TW104208770U patent/TWM511125U/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322082A (en) * | 2014-07-31 | 2016-02-10 | 首尔伟傲世有限公司 | Light emitting diode and light emitting device |
| CN105322082B (en) * | 2014-07-31 | 2019-04-09 | 首尔伟傲世有限公司 | Light-emitting diode chip for backlight unit and light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105322082A (en) | 2016-02-10 |
| TWM511125U (en) | 2015-10-21 |
| KR20160015685A (en) | 2016-02-15 |
| TW201605016A (en) | 2016-02-01 |
| TWI570881B (en) | 2017-02-11 |
| CN105322082B (en) | 2019-04-09 |
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