TW201332155A - Electrode coplanar light-emitting diode device, flip-chip light-emitting diode package structure and optical reflection structure - Google Patents

Abstract

An electrode coplanar light-emitting diode device, a flip-chip light-emitting diode package structure and an optical reflection structure are disclosed. The light-emitting diode device comprises: an element substrate, a first type doping layer, a luminous layer, a second type doping layer, a transparent conductive metal oxide layer, at least two electrode first parts with different polarity, a first transparent insulating layer, a second insulating layer, and at least two electrode second parts with different polarity, wherein the second insulating layer is formed on and covers the first insulating layer and the at least two electrode first parts with different polarity. The upper surface is a plane with a uniform height with at least two separated grooves formed thereon for corresponding to the at least two electrode first parts with different polarity respectively; wherein the at least two electrode second parts form an integral electrode of at least two different polarities by utilizing at least an conductive metal to be fully arranged in the at least two separated grooves and electrically connected to the at least two electrode first parts with different polarity respectively; the upper surfaces of the at least two electrode second parts are coplanar; in addition, the range of the at least two separated grooves can correspondingly expand to cover most surface of the luminous layer so that the at least two electrode second parts formed thereby can both serve as reflective layers for light emitted by the luminous layer. Accordingly, effects of raising assembly yield, simplifying manufacturing process and reducing manufacturing costs can be achieved.

Description

Electrode coplanar light-emitting diode component, flip-chip light-emitting diode package structure and light-reflecting structure

The invention relates to a light-emitting diode component, in particular to a structure of a coplanar flip-chip light-emitting diode component, a flip-chip light-emitting diode package structure, and a flip-chip light-emitting diode. The light reflecting structure of the component.

In the technical fields of a flip-chip light emitting diode or a flip-chip light emitting diode package structure or a reflective structure suitable for a flip-chip light-emitting diode, various types exist. Prior art, such as: Republic of China Patent Publication No. 573330, New Type M350824; US Patent Nos. 6,914,268, US 8,049,230, US 7,985,979, US 7,939,832, US 7,713,353, US 7,642,121, US 7,462,861, US 7, 393, 411, US 7, 335, 519, US 7,294, 866, US 7, 087, 526, US 5, 557, 115, US 6, 514, 782, US 6, 497, 944, US 6, 791, 119; and U.S. Patent Publication No. US 2002/0163302, US 2004/0113156, and the like. The above prior art is mostly directed to a light emitting diode (LED) component structure or a package structure thereof, in terms of luminous efficiency, heat dissipation function, service life, manufacturing cost, assembly yield, process simplification, light decay, etc. The problems and shortcomings arising from the aspects, and the different technical means to solve these problems and defects.

US 6,914,268 for example, US 6,914,268 discloses a light-emitting diode (LED) component, a flip-chip light-emitting diode package structure, and a reflective structure suitable for a flip-chip light-emitting diode component (LED) DEVICE, FLIP-CHIP LED PACKAGE AND LIGHT REFLECTING STRUCTURE), but its LED structure still has the following disadvantages:

(1) The two-electrode connection pads disclosed in US Pat. No. 6,914,268, such as the anode (anode, 160/260) and the cathode (cathode, 170/270) shown in Figures 1-3, are not coplanar, resulting in a subsequent process. For example, the assembly yield of the flip-chip LED package structure (as shown in FIG. 3) cannot be effectively improved, and the process cannot be simplified and the manufacturing cost can be effectively reduced.

(2) An electrode connection pad disclosed in US 6,914,268, such as the anode (160/260) shown in Figures 1-3, is formed and located on a reflective layer (150/250), and The reflective layer (150/250) is formed and disposed on a transparent conductive oxide layer (140/240). Therefore, the anode (anode, 160/260) must be worn during the process. The reflective layer (150/250) and the transparent conductive metal oxide layer (140/240) are electrically connected to a P-type doped layer (130/230), thus causing a process The complexity is complicated, and the process cannot be simplified and the production cost can be effectively reduced.

As can be seen from the above, the structures and processes of the prior art described above are difficult to meet the requirements of actual use. Therefore, in the structural design of the light-emitting diode element, the flip-chip light-emitting diode package structure, and the light-reflecting structure, The electrode connection pads of a flip-chip light-emitting diode element (such as the positive electrode 160/260 of US 6,914,268) and the reflective layer (such as 150/250 of US 6,914,268) still have the need for further improvement. The light-emitting diode element of the present invention is an invention of a light-emitting diode element in the field of limited development of the technology, thereby achieving an effect of effectively improving the assembly yield, simplifying the process, and effectively reducing the manufacturing cost.

The main object of the present invention is to provide a light emitting diode element having at least two electrode portions of different electrodes and different poles, and the upper surface of the second electrode of the at least two different electrodes is designed to be coplanar, thereby being effective Improve the assembly yield of the flip-chip LED package structure.

Still another object of the present invention is to provide a light emitting diode element having at least two electrode portions of different electrodes and different poles, and the range of the second portion of the electrode of the at least two different poles is relatively enlarged to cover the light emission The majority of the surface of the light-emitting layer of the diode element is such that the second portion of the second electrode can serve as a reflective layer for the light emitted by the light-emitting layer, thereby achieving a simplified process and an effective reduction in manufacturing cost.

In order to achieve the above object, a preferred embodiment of the LED component of the present invention comprises: an element substrate, a first doped layer, a second doped layer, a transparent conductive metal oxide layer, at least two a first portion of the electrode of the different poles, a first transparent insulating layer, a second insulating layer and at least two second portions of the electrodes which are separated and different in polarity. Wherein the first type doping layer is formed on the element substrate; the second type doping layer is formed and disposed on a portion of the first type doping layer, wherein the second type doping layer Forming a light emitting layer at the interface with the first type doped layer to emit light; the transparent conductive metal oxide layer is formed on the second type doped layer to serve as an ohmic contact layer; the at least two different poles The first portion of the electrode includes at least one first electrode, the first portion is formed through the transparent conductive metal oxide layer, and is disposed on the first type doped layer to be electrically connected to the first type doped layer And the at least one second electrode is formed on the second type doping layer to be electrically connected to the second type doping layer, wherein the at least one first electrode first portion and the at least one The top surfaces of the first portions of the second electrodes are respectively located at different height positions to form a non-coplanar state; the first transparent insulating layer is formed and covers the element substrate, the first type doping layer, and the second type doping a layer of the impurity layer and the transparent conductive metal oxide layer to make the at least The first portion of the first electrode and the first portion of the at least one second electrode can be exposed outwardly from the first insulating layer; the second insulating layer is formed and covers the electrode of the first insulating layer and the at least two different electrodes The upper surface of the second insulating layer is a plane of uniform height, and the upper surface is provided with at least two separate grooves to respectively correspond to the first portions of the at least one first and second electrodes. The first portions of the first and second electrodes are respectively exposed through the at least two separate grooves, wherein the groove openings of the at least two separate grooves are coplanar; the at least two separate and different poles The second portion of the electrode includes a first electrode second portion and a second electrode second portion, which are formed by at least one conductive metal and are respectively filled in the at least two separate grooves for respectively corresponding electrical connections The first portion of the first electrode and the first portion of the second electrode, and the upper surfaces of the second portions of the electrodes of the two separate and different poles are coplanar.

Further, the range of the at least two separate grooves is relatively enlarged to cover a majority of the surface of the luminescent layer such that the at least two separate and different pole electrodes formed in the at least two separate grooves are second The portion can simultaneously serve as a reflective layer of light emitted by the luminescent layer for reflecting light emitted by the luminescent layer and directed toward the reflective layer.

The flip-chip light-emitting diode package structure of the present invention is formed by assembling a package substrate with the above-mentioned light-emitting diode element, and a preferred embodiment of the flip-chip light-emitting diode package structure includes a package substrate and a light emitting diode element; wherein the light emitting diode element is overlaid on the package substrate and electrically connected thereto. The light emitting diode component is electrically connected to the package substrate by at least two conductive metal bumps respectively disposed on at least two separate and different poles of the light emitting diode component. On the second part of the electrode.

The package substrate is a printed circuit (PCB) substrate having a heat dissipation function, and a preferred embodiment includes an insulating substrate, two circuit layers, and at least two heat dissipation holes; wherein the insulation substrate has upper and lower layers. The two circuit layers are respectively formed and disposed on two surfaces of the substrate, wherein the circuit layer on one surface is separated by at least two conductive metal bumps so that the light emitting diode elements are separated and different by the at least two The second electrode of the electrode is electrically connected to the package substrate; the at least two heat dissipation holes are disposed between the two surfaces of the insulating substrate, and each of the heat dissipation holes is provided with a heat conductive material to electrically connect the insulation The heat source generated by the light emitting diode element on one surface of the substrate is conducted from one surface of the insulating substrate to the other surface to dissipate heat outward.

In order to make the present invention more clear and detailed, the structure, process and technical features of the present invention are detailed as follows:

Referring to FIGS. 1, 2, and 3, which are respectively a schematic cross-sectional view, a top view, and a cross-sectional view of a structure of an embodiment of an electrode coplanar light-emitting diode of the present invention. The LED device 1 of the present embodiment includes a device substrate 10, a 1st-type doped layer 20, and a 2nd-type doped layer. 30. A transparent conductive oxide layer 50, at least two different first electrode of electrodes 60, 70, a first transparent insulating layer (transparent insulating passivation layer) 80, A second insulating layer 90 and at least two second portions of electrodes 100, 110.

The element substrate 10 of the present embodiment can be constituted by a sapphire substrate, but is not limited, and can be formed by using a glass substrate.

The first type doping layer 20 of the embodiment is formed and disposed on the element substrate 10, and the second type doping layer 30 is formed and disposed on a portion of the first type doping layer 20, wherein the The interface between the second doped layer 30 and the first doped layer 20 forms a light emitting layer 40 to emit light. The first doped layer 20 can be a P-type doped layer or an N-type doped layer, and the second doped layer 30 is The opposite type doping layer of the first type doping layer 20, that is, when the first type doping layer 20 is a P type doping layer, the second type doping layer 30 is an N type doping layer. On the other hand, when the first doped layer 20 is an N-type doped layer, the second doped layer 30 is a P-type doped layer; the first and second doped layers 20 and 30 are It is composed of a group III-V compound semiconductor material, such as gallium nitride (GaN), gallium phosphide (GaP) or gallium phosphide arsenide (GaAsP).

The transparent conductive metal oxide layer 50 of the present embodiment is formed and disposed on the second type doped layer 30 as an ohmic contact layer; the transparent conductive metal oxide layer 50 is made of indium tin oxide (ITO, Indium tin oxide is preferred but not limited. For example, CTO (cerium tin oxide), arsenic tin oxide (AT O), aluminum zinc oxide (AZO), oxidation may be used. Indium zinc oxide (IZO), zinc oxide (ZO, zinc oxide) or other similar transparent conductive metal oxide materials.

The first portion of the electrode of the at least two different poles of the embodiment includes at least one second electrode first portion 60 and at least one first electrode first portion 70, wherein the at least one second electrode first portion 60 passes through The transparent conductive metal oxide layer 50 is formed on the second type doped layer 30 to be electrically connected to the second type doped layer 30. For convenience of description, the first type and the second type are The electrode first portion 60 electrically connected to the doped layer 30 is defined as a second electrode first portion 60; wherein the at least one first electrode first portion 70 is formed and disposed on the first type doped layer 20 to The first doped layer 20 is electrically conductive. For convenience of description, the electrode first portion 70 electrically connected to the first doped layer 20 in FIG. 1 is defined as the first electrode first portion 70. The second electrode first portion 60 and the top surface of the first electrode first portion 70 are respectively located at different height positions to form a non-coplanar two electrode first portion. Referring to FIG. 2 again, the number of the at least one second electrode first portion 60 and the first electrode first portion 70 is not limited, and the visible conductive performance needs, such as the magnitude of the current amount or the uniformity of the current distribution. Or a plurality of second electrode first portions 60 and a plurality of first electrode first portions 70 respectively, as shown in FIG. 2, respectively, four second electrodes first portion 60 and four first portions are respectively provided as shown in FIG. The first portion 70 of the electrode is not limited, and is uniformly disposed and electrically connected to the second doped layer 30 and the first doped layer 20, respectively. Further, the second electrode first portion 60 and the first electrode first portion 70 are herein defined as "electrode first portion", that is, the "electrode first portion (60, 70)" will be replaced with an "electrode first" The second part (described later) combines to form a complete electrode.

The first transparent insulating layer 80 of the embodiment is formed on the surface of the element substrate 10, the first doping layer 20, the second doping layer 30, and the transparent conductive metal oxide layer 50. So that the at least one first electrode first portion 70 and the at least one second electrode first portion 60 can pass outward through the first insulating layer 80. In the light-emitting diode element 1 of the present invention, the first transparent insulating layer 80 can be regarded as a transparent insulating passivation layer.

The second insulating layer 90 of the embodiment is formed and covers the first insulating layer 80 and the at least one first and second electrode first portions 70, 60. The upper surface 91 of the second insulating layer 90 is a plane of uniform height or nearly uniform height, and the upper surface 91 is provided with at least two separate grooves 92, 93 (shown in FIG. 3) to respectively correspond to the At least one first and second electrode first portions 70, 60 such that the at least one first and second electrode first portions 70, 60 are respectively exposed through the at least two separate grooves 92, 93, such as 3, wherein the groove openings of the at least two separate grooves 92, 93 are coplanar or nearly coplanar, that is, when the height or slope of the groove openings of the grooves 92, 93 are at a processing margin Within the scope of the tolerances, such that the same or similar functions and objectives contemplated by the present invention to be designed as "coplanar" are still achieved, and are referred to herein as "coplanar".

The at least two separate and different pole electrode portions 100, 110 of the embodiment comprise at least one second electrode second portion 100 and at least one first electrode second portion 110, which utilize at least one conductive metal to respectively Formed in the at least two separate recesses 92, 93, such that the at least one second electrode second portion 100 and the at least one first electrode second portion 110 are electrically coupled to the at least one second The electrode first portion 60 and the at least one second electrode first portion 70, and the upper surfaces 101, 111 of the second and different electrode second portions 100, 110 are coplanar or nearly coplanar. The at least one second electrode second portion 100 and the first electrode second portion 110 are herein defined as "electrode second portion", that is, the "electrode second portion (100, 110)" is used to respectively The "electrode first portion (60, 70)" combines to form a complete and integral electrode. In addition, the at least one second electrode second portion 100 and the at least one first electrode second portion 110 indicate that the second electrode second portion 100 and the first electrode second portion 110 are not limited to one, that is, The second electrode 100 of the second electrode 100 can be electrically connected to the first electrode 60 of the second electrode. As shown in FIG. 2, two (at least one) second electrode and the second portion 100 can be utilized. The first portion 60 (not shown) is electrically connected to each of the two second electrodes.

Referring to Figures 1-3, the range of the at least two spaced apart grooves 92, 93 of the present embodiment is further expandable to cover a substantial portion of the surface of the luminescent layer 40, thus the at least two spaced grooves 92 The at least two separate electrode second portions 100, 110 formed in the 93 are also relatively enlarged to cover a majority of the surface of the luminescent layer 40, so the at least two separate electrode second portions 100, 110 can further serve as the A reflective layer of light emitted by the luminescent layer 40 for reflecting light emitted by the luminescent layer 40 and directed toward the reflective layer. Thus, in the fabrication of the light-emitting diode element 1 of the present embodiment, at least the process of a reflective layer (such as the reflective layer 150/250 disclosed in US 6,914,268) can be reduced.

The electrode second portions 100, 110 of the at least two separate and different poles of this embodiment may be formed by deposition in the at least two separate recesses by a sputtering method, a plating method, or a plating (electroless metal) method. In the slots 92, 93. Further, after the deposition of the at least two separate and different electrode second portions 100, 110, the surface of the second portion 100, 110 of the electrode may be coplanar or nearly coplanar. Therefore, the assembly yield of the flip-chip light-emitting diode package structure can be effectively improved.

For the structural requirements of the light-emitting diode element, the light-emitting diode element 1 of the present invention can be further formed on the second-type doped layer 30 and provided with a trained-layer superlattice contact layer ( The figure is not shown) such that the stress superlattice layer is disposed between the second type doped layer 30 and the transparent conductive metal oxide layer 50. The stress superlattice layer is a well-known technique such as the strained-layer superlattice (SLS) contact layer 135/235 disclosed in US 6,914,268 B2.

In the light-emitting diode element 1 of the embodiment, when the first portion of the electrode of the at least two different poles includes the at least one second electrode first portion 60 and the at least one first electrode first portion 70, When the gold is composed of gold, the electrode second portions 100 and 110 having at least two separate and different poles, that is, the at least one second electrode second portion 100 and the at least one first electrode second portion 110 are made of tin. The conductive metal is respectively filled in the at least two separate grooves 92, 93 to be electrically connected to the electrode first portions 60, 70 respectively electrically connected to the at least two different electrodes.

4, 5, and 6, which are respectively a schematic cross-sectional view showing another embodiment of the electrode coplanar light-emitting diode device of the present invention, and a structural cross-sectional view of the electrodes respectively formed of different conductive metals. The structure of the light-emitting diode element 1a of the present embodiment is mostly the same as that of the light-emitting diode element 1 shown in FIG. 1-3, and also includes an element substrate 10, a first type doped layer 20, and a second type. a doped layer 30, a transparent conductive metal oxide layer 50, at least two different electrode first portions 60, 70, a first transparent insulating layer 80, a second insulating layer 90, and at least two separate electrodes second portion 100, 110. The light-emitting diode element 1a of the present embodiment is further compared with the light-emitting diode element 1 shown in FIG. 1-3. It can be seen that the upper surface 91 of the second insulating layer 90 of the embodiment is also a uniform height or a nearly uniform height. The plane is as shown in FIG. 4, and the upper surface 91 is provided with at least two separate grooves 92a, 93a (as shown in FIG. 4) corresponding to the at least one first and second electrode first portions 70, respectively. 60, such that the at least one first and second electrode first portions 70, 60 are respectively exposed through the at least two separate grooves 92a, 93a as shown in FIG. 4, wherein the at least two separate grooves The notches of 92a, 93a are also coplanar or nearly coplanar.

The maximum difference between the above two embodiments 1 and 1a is that the range of the at least two separate grooves 92a, 93a of the present embodiment is not expanded to cover the light-emitting diode element 1 as shown in FIGS. The majority of the surface of the luminescent layer 40, that is, the at least two separate grooves 92a, 93a of the present embodiment, exhibit a circular hole shape, so that at least two of the at least two separate grooves 92a, 93a are formed. The separate electrode second portions 100, 110 are also confined within the circular hole-shaped recesses 92a, 93a.

Further, in the case of the light-emitting diode element 1 or the light-emitting diode element 1a shown in FIGS. 4 and 5, the first portion of the electrode of the at least two different poles, that is, the at least one second electrode first portion 60 and at least When the first portion of the first electrode 70 is made of gold, the second portion 100, 110 of the at least two separate and different poles includes at least a second electrode portion 100 and at least a first electrode portion. The two portions 110 are formed by using tin as a conductive metal to fill the at least two separate grooves 92a, 93a, respectively, for electrically connecting to the at least two electrode first portions 60, 70, respectively.

In addition, in the light-emitting diode element 1 or the light-emitting diode element 1a shown in FIGS. 4 and 6, when the first portion of the electrode of the at least two different poles, that is, the at least one second electrode, the first portion 60 and at least When the first portion of the first electrode 70 is made of aluminum, the second portion 100, 110 of the at least two separate and different poles includes at least a second electrode portion 100 and at least a first electrode portion. The second portion 110 is a first use of nickel (electroless metal) as a conductive metal to form a nickel layer 102, 112 in the at least two separate grooves 92/92a, 93/93a (as shown in FIG. 6). Correspondingly electrically connected to the at least two electrode first portions 60, 70, and then using gold (electroless metal) as a conductive metal to form a gold layer 103, 113 on each of the nickel layers 102, 112, respectively. (As shown in FIG. 6), the nickel layers 102, 112 are combined with the gold layer 103, 113, respectively, to form the electrode second portions 100, 110 of at least two separate and different poles, and remain in a coplanar state.

Referring to FIG. 7-9, FIG. 7 is a schematic cross-sectional view showing three embodiments of a flip-chip LED package structure obtained by flip chip mounting of the LED device 1 and 1a of the present invention. The flip-chip type LED package structure 2 of the present invention is formed by assembling a package substrate 120 with at least one of the foregoing light-emitting diode elements 1 or 1a. The flip-chip LED package structure 2 mainly comprises a package substrate 120 and at least one light-emitting diode element 1 as shown in FIG. 7 or at least one light-emitting diode element 1a as shown in FIGS. In FIG. 7 , the flip-chip LED package structure 2 is illustrated by a package substrate 120 and two LED components 1 as shown in FIG. 1 as an example; but in FIG. 8 , The flip-chip LED package structure 2 is illustrated by a package substrate 120 and two LED components 1a as shown in FIG. 5, but is not limited; in FIG. 9, the flip-chip illumination The diode package structure 2 is illustrated by way of example, but not limited to, a package substrate 120 and two light-emitting diode elements 1a as shown in FIG.

The at least one light-emitting diode element 1 or 1a is overlaid on the package substrate 120 and electrically connected to the package substrate 120 by at least two conductive metal bumps 130, wherein the at least two conductive metal bumps 130 are They are respectively disposed on the at least two separated electrode second portions 100, 110 of the light emitting diode element 1 or 1a.

The package substrate 120 may be provided with a printed circuit board having a heat dissipation function as a substrate, instead of using a submount and an aluminum substrate in the package. The package substrate 120 includes: an insulating substrate 121, at least two circuit layers 122, 123, and at least two heat dissipation holes 124, 125 as shown in FIGS. 7-9; wherein the insulating substrate 121 has upper and lower two side surfaces; The two circuit layers 122 and 123 are respectively formed on the two side surfaces of the substrate 121, wherein the circuit layer 122 on one side surface is formed by the at least two conductive metal bumps 130 to make the at least one light emitting diode The component 1 or 1a can be electrically connected to the package substrate 120 by the at least two separated electrode portions 100 and 110. The at least two heat dissipation holes 124 and 125 are disposed above and below the insulating substrate 121. Between the two side surfaces, the heat dissipation holes 124 and 125 are provided with a heat conductive material, such as a resin, a silver paste, a thermal paste, or the like, to electrically connect the at least one light on the surface (122) of the package substrate 120. The heat source generated by the diode element 1 or 1a in operation is conducted by one side surface (122) of the package substrate 120 to the other side surface (123) to dissipate heat outward.

Referring to FIG. 8 and FIG. 9 , at least one reflective layer 140 is further disposed on the side surface (122) of the at least one LED component 1a of the package substrate 120 as the at least one light emitting diode. A reflective layer of light emitted by the light-emitting layer 40 of the polar body element 1a is configured to reflect light emitted by the at least one light-emitting diode element 1a and directed toward the reflective layer 140. The reflective layer 140 can be formed on the side surface (122) of the package substrate 120 facing the LED component by a sputtering method or a tin-spraying method, that is, the reflective layer 140 can be formed as a layer and covered on the circuit layer 122. In addition to the function of the reflective layer 140, the solder layer has an effect of protecting the circuit layer 122 from oxidation.

Referring to FIGS. 10 and 11, the present invention further provides a light reflecting structure (a light reflecting) suitable for a flip-chip light emitting diode element for the light emitting diode element 1 or 1a as shown in FIG. 1 or FIG. The structure for flip-chip light emitting diode device with coplanar pads 3 or 3a, comprising: a transparent conductive metal oxide layer 50 formed and disposed on a semiconductor layer of the light emitting diode element 1; An insulating layer 80 formed on and overlying the transparent conductive metal oxide layer 50; and at least two separate electrode second portions 100, 110 including at least one second electrode second portion 100 and at least one first electrode The two portions 110 are formed by using at least one conductive metal and corresponding to the at least one second electrode first portion 60 and the at least one second electrode first portion 70 electrically connected to the light emitting diode element 1 respectively.

The reflective structure 3 or 3a of the present invention is compared with the prior art, such as US Pat. No. 6,914,268. The main distinguishing feature is that the upper surfaces 101, 111 of the electrode second portions 100, 110 of the at least two separate and different poles are coplanar, The reflective structure 3 of the invention has the effect of improving the assembly yield of the flip-chip light-emitting diode package structure as compared with the prior art, such as US 6,914,268.

A further distinguishing feature of the light reflecting structure 3 of the present invention as shown in FIG. 10 is that the range of the at least two separate electrode portions 100, 110 is relatively enlarged to cover the semiconductor layer of the light emitting diode element 1 such as The majority of the surface of the light-emitting layer 40 is such that the second electrode 100, 110 can be used as the light emitted by the light-emitting layer 40 of the light-emitting diode element 1, as shown in FIG. a reflective layer for reflecting light emitted by the light-emitting layer 40 of the light-emitting diode element 1 and directed toward the reflective layer, as shown in FIG. Therefore, the reflective structure 3 of the present invention has the advantages of simplifying the process and effectively reducing the manufacturing cost as compared with the prior art, such as US 6,914,268.

A further distinguishing feature of the light reflecting structure 3a of the present invention as shown in FIG. 11 is that, as shown in FIGS. 8 and 9, a package substrate 120 is assembled with the light emitting diode element 1a facing the at least one light emitting diode. On one side surface of the body element 1a, at least one reflective layer 140 may be correspondingly provided for the light emitted by the light-emitting layer 40 of the at least one light-emitting diode element 1a, as shown in FIG. a reflective layer for reflecting light emitted by the at least one light emitting diode element 1a and directed toward the reflective layer 140, as shown in FIG. The reflective layer 140 can be formed on the side surface of the package substrate 120 facing the light-emitting diode element 1a by a sputtering method or a tin-spraying method, so that the reflective structure 3a of the present invention is simplified compared with the prior art such as US 6,914,268. Process and effective reduction of production costs.

The above are only the preferred embodiments of the present invention, and are merely illustrative and not restrictive. It will be apparent to those skilled in the art that many changes, modifications, and equivalents may be made without departing from the spirit and scope of the invention.

1, 1a. . . Light-emitting diode component

10. . . Component substrate

20. . . First doped layer

30. . . Second type doping layer

40. . . Luminous layer

50. . . Transparent conductive metal oxide layer

60, 70. . . First part of the electrode

80. . . First transparent insulating layer

90. . . Second insulating layer

91. . . Upper surface

92, 93, 92a, 93a. . . Groove

100, 110, 100a, 110a. . . Electrode second

101, 111. . . Upper surface

102, 112. . . Nickel layer

103, 113. . . Gold layer

120. . . Package substrate

121. . . Insulating substrate

122, 123. . . Circuit layer

124, 125. . . Vents

130. . . Metal bump

140. . . Reflective layer

A. . . Ray out

B. . . Reflected light

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing the structure of an embodiment of an electrode coplanar light-emitting diode of the present invention.

2 is a top plan view of an embodiment of an electrode coplanar light emitting diode device of the present invention.

3 is a cross-sectional view showing a structure in an embodiment of an embodiment of an electrode coplanar light-emitting diode of the present invention.

4, 5, and 6, which are respectively a schematic cross-sectional view showing another embodiment of the electrode coplanar light-emitting diode device of the present invention, and a structural cross-sectional view of the electrodes respectively formed of different conductive metals.

4 is a cross-sectional view showing the structure of another embodiment of the electrode coplanar light-emitting diode of the present invention.

FIG. 5 is a schematic cross-sectional view showing another embodiment of the electrode coplanar light-emitting diode element of the present invention (the electrodes are respectively formed of different conductive metals).

Figure 6 is a schematic cross-sectional view showing another embodiment of the electrode coplanar light-emitting diode element of the present invention (the electrodes are respectively formed of different conductive metals).

7-9 are schematic cross-sectional views showing the structure of three embodiments of the flip-chip light emitting diode package structure of the present invention.

Figure 10 is a schematic cross-sectional view showing the structure and optical path of an embodiment of the light-reflecting structure of the present invention.

Figure 11 is a cross-sectional view showing the structure and optical path of another embodiment of the light-reflecting structure of the present invention.

1. . . Light-emitting diode component

10. . . Component substrate

20. . . First doped layer

30. . . Second type doping layer

40. . . Luminous layer

50. . . Transparent conductive metal oxide layer

60, 70. . . First part of the electrode

80. . . First transparent insulating layer

90. . . Second insulating layer

91. . . Upper surface

92, 93. . . Groove

100, 110. . . Electrode second

101, 111. . . Upper surface

Claims (18)

An electrode coplanar light emitting diode element comprising: an element substrate; a first type doped layer formed on the element substrate; and a second type doped layer formed and disposed in the portion The first type doped layer, wherein an interface between the second type doped layer and the first type doped layer forms a light emitting layer to emit light; a transparent conductive metal oxide layer formed and disposed on the layer The second type doped layer is provided as an ohmic contact layer; the first part of the electrode of at least two different poles comprises: at least one first electrode, the first portion is formed and disposed on the first type doped layer to The first type doping layer is electrically conductive; and the at least one second electrode first portion is formed through the transparent conductive metal oxide layer and disposed on the second type doped layer to be doped with the second type The layer is electrically conductive, wherein the at least one first electrode first portion and the top surface of the at least one second electrode first portion are respectively located at different height positions; a first transparent insulating layer is formed and covered on the element substrate The first type doping layer, the second type doping layer, and the transparent a surface of the electrical metal oxide layer such that the at least one first electrode first portion and the at least one second electrode first portion can be exposed outwardly from the first insulating layer; a second insulating layer is formed and Covering the first insulating layer and the first portion of the at least one first and second electrodes, the upper surface of the second insulating layer is a plane of uniform height, and the upper surface is provided with at least two separate grooves Corresponding to the at least one first and second electrode first portions respectively, such that the at least one first and second electrode first portions are respectively exposed through the at least two separate grooves, wherein the at least two separate The groove of the groove is coplanar; and the second portion of the electrode of at least two separate and different poles includes at least a first electrode second portion and at least a second electrode second portion, which utilize at least one conductive metal Forming and filling respectively in the at least two separate grooves for electrically connecting to the at least one first electrode first portion and the at least one second electrode first portion respectively to form at least two separate one-piece electrodes And the at least two separate electrodes of the second part Upper surface coplanar. The illuminating diode component of claim 1, wherein the at least two spaced apart grooves are relatively enlarged to cover a majority of the surface of the luminescent layer so as to be formed in the at least two separate grooves The second electrode of the at least two separate and different poles serves as a reflective layer of light emitted by the luminescent layer for reflecting light emitted by the luminescent layer and directed toward the reflective layer. The light-emitting diode element according to claim 1, wherein the second electrode of the at least two separate and different poles is formed by deposition using a sputtering method, a plating method, a plating method (electroless metal) method. . The illuminating diode component of claim 3, wherein the second electrode of the at least two separate and different poles is further formed by deposition after the deposition is formed to make the at least two separate electrodes of different poles second The upper surface of the part becomes coplanar. The light-emitting diode element according to claim 1, wherein the element substrate comprises a sapphire substrate and a glass substrate. The light-emitting diode device of claim 1, wherein the first-type doped layer and the second-type doped layer are composed of a III-V compound semiconductor material. The luminescent diode component according to claim 6, wherein the III-V compound semiconductor material comprises gallium nitride (GaN), gallium phosphide (GaP), and gallium phosphide (gallium phosphide). Arsenide, GaAsP). The light-emitting diode element according to claim 1, wherein the transparent conductive metal oxide layer is made of a material selected from the group consisting of indium tin oxide (ITO), cerium tin oxide (CTO), and cerium oxide. A group of tin (ATO, antimony tin oxide), aluminum zinc oxide (AZO), indium zinc oxide (IZO), zinc oxide (ZO, zinc oxide). The light emitting diode device of claim 1, wherein when the first type doped layer is an N type doped layer, the second type doped layer is a P type doped layer; The doped layer is a P-type doped layer, and the second doped layer is an N-type doped layer. The illuminating diode device of claim 1, wherein when the first portion of the electrode of the at least two different poles is made of gold, the second portion of the electrode of the at least two separate and different poles is formed by using tin as a conductive metal. And filling the at least two separate grooves for respectively electrically connecting to the first portion of the electrode of the at least two different poles. The illuminating diode component of claim 1, wherein when the first portion of the electrode of the at least two different poles is made of aluminum, the second portion of the electrode of the at least two separate and different poles is first made of nickel. Forming a nickel layer in the at least two separate grooves for electrically connecting to the first portion of the at least two electrodes, respectively, and using the gold as a conductive metal to form a gold on the nickel layer. Floor. An electrode-coplanar flip-chip light-emitting diode package structure comprising: a package substrate; and at least one light-emitting diode element, which is claimed in any one of claims 1 to 11 The light-emitting diode element according to the item is electrically over-connected to the package substrate. The flip-chip LED package of claim 12, wherein the LED component is electrically connected to the package substrate by at least two conductive metal bumps, the at least two conductive metal bumps And respectively disposed on the second portion of the electrode of the at least two separate and different poles of the LED component. The flip-chip LED package structure of claim 12, wherein the package substrate is a printed circuit (PCB) substrate having a heat dissipation function, comprising: an insulating substrate having upper and lower surface surfaces; The layers are respectively formed and disposed on the two side surfaces of the insulating substrate, wherein the circuit layer on one side surface is separated and different by at least two conductive metal bumps respectively disposed on the at least one light emitting diode element a second electrode of the electrode, such that the at least one light emitting diode element is electrically connected to the package substrate by the at least two separated and different electrode second portions; and at least two heat dissipation holes are worn through Provided between the two side surfaces of the insulating substrate, wherein the heat dissipation holes are provided with a heat conductive material to electrically connect the light emitting diode element electrically connected to the surface of the insulating substrate to the heat source generated by the operation. One side surface of the insulating substrate is conducted to the other side surface to dissipate heat outward. The flip-chip LED package structure of claim 14, wherein a reflective layer is further disposed on a side surface of the package substrate facing the light emitting diode element for emitting the light emitting diode component a reflective layer of light emitted by the layer for reflecting light emitted by the light emitting diode element and directed toward the reflective layer. The flip-chip LED package structure of claim 15, wherein the reflective layer is formed on the surface of the package substrate facing the light-emitting diode element by a method of a sputtering method or a tin-spraying method. The flip-chip LED package structure of claim 14, wherein the heat conductive material disposed in the heat dissipation holes comprises a resin, a silver paste, and a thermal paste. A light-reflecting structure suitable for a flip-chip light-emitting diode element, comprising: a transparent conductive metal oxide layer formed on a semiconductor layer of a light-emitting diode element; a first transparent insulating layer, Forming and covering the transparent conductive metal oxide layer; and at least two separate and different electrode second portions including at least one first electrode second portion and at least one second electrode second portion, which utilize Forming at least one conductive metal correspondingly electrically connected to the two separate electrodes of the light emitting diode element; wherein the upper surface of the second portion of the electrode and the different poles are coplanar; wherein the at least two are separated And the second portion of the electrode of the different poles is relatively enlarged to cover a majority of the surface of the semiconductor layer of the light emitting diode element, so that the second portion of the electrode of the at least two separate and different poles is used as the light emitting diode The reflective layer of light emitted by the element reflects light emitted by the light emitting diode element and directed toward the reflective layer.