200913300 九、發明說明： 【發明所屬之技術領域】 本發明係提供一種發光二極體之覆晶封裝製作方法， 尤指一種具有均勻螢光粉層之發光二極體之覆晶封裝製作 方法。 【先前技術】 發光二極體（Light emitting diode，LED)因為利用直接能隙 (direct bandgap)發光，且可以由半導體製程生產，所以具有 高效率及低成本之優點。隨著藍光二極體的研發成功及功 率提升，發光二極體在一般照明（general lighting)及背光(back light)應用也逐漸為人重視。 參見第一圖，為美國專利早期公開20050274959所揭露 之一種高功率發光二極體封裝，藉以封裝一高功率發光二 極體晶片401 。如該圖所示，該高功率發光二極體封裝主 要包含一石夕基座（silicon submount)402、一散熱座409及一聚 光杯413。該石夕基座402具有一凹槽及位在凹槽中的電極 (未標號），發光二極體晶片401以覆晶方式安裝在石夕基 座402之凹槽中，且經由焊錫414a及414b電連接到凹槽中 的電極。凹槽中的電極藉由焊接線412a及412b而連接到位 在散熱座409上的外部電極406a及406b，以與外部電源連 接，藉以提供該發光二極體晶片401電力。該聚光杯413 係安裝在散熱座409上，以使發光二極體晶片4〇1所發出 的光線可以集中。 然而上述之習知高功率發光二極體封裝有下面缺點： 200913300 、1此高功率發光二極體封裝，螢光粉（phosphor)通常係 以點膠方式注人在凹槽中。由於$光粉在點膠製程中均勾 度不易控制’造成光線的不均勻。 再者，因為該習知發光二極體封裝係採用打線方式連 接發光二極體晶片4G1之接點，因此製程較為複雜，且難 以達成表面安裝（surface m〇unt)。 【發明内容】 因此本發明之目的即在於提供一種具有均勻榮光粉 層、且易於表面安裝之發光二極體之覆晶封震製作方法。 為達成上述目的，本發明提供―種 =方::包含下列步驟:提供一具有多數凹槽= 槽陣列，在母-該凹槽内形成多數個導通孔，且在且在 凹槽底部形成對應通孔之多數個底部電極 :安;在該凹槽内，且該發光二極體二: 二：二孔电連接，切割該矽凹槽陣列成多數之矽基 ’且母-财基座具有至少—該凹槽；使用 該矽基座之該凹槽填平，以提供…d 印刷方式於該保護膠上形成一營光 ;=及:吏用 在-平整表面上’因此可以提供均勻之 本”，亦可預先製錢 ^ 先片色溫荼數後，將所需色溫 =核赏 上，代前述之印= 參見第二圖’為依據本發明之一較佳具體實例之高功 200913300 率發光二極體封裝製作方法之 驟： 圖’該方法包含下列步 步驟200 (復參見第三八圖）， 等向性濕钱刻方式，製作出具有多數凹:石夕晶圓上使用非 3〇〇，其中該非等向性濕飿刻方式=槽之凹槽陣列 TMAH(四甲基氫氧化銨）來進行“亥^簡’或是 矽晶圓且非等向性濕钱刻采=0可以選用蟲晶 槽角度為15-U〇度。 更凹槽冰度為购00亳米’凹200913300 IX. Description of the Invention: [Technical Field] The present invention provides a method for fabricating a flip chip package of a light-emitting diode, and more particularly to a method for fabricating a flip chip package having a light-emitting diode of a uniform phosphor layer. [Prior Art] Since a light emitting diode (LED) emits light by direct bandgap and can be produced by a semiconductor process, it has advantages of high efficiency and low cost. With the successful development and power improvement of blue light diodes, light-emitting diodes have gradually gained attention in general lighting and backlight applications. Referring to the first figure, a high power light emitting diode package disclosed in U.S. Patent No. 2,050, 274, 959 is incorporated herein by reference. As shown in the figure, the high power LED package mainly comprises a silicon submount 402, a heat sink 409 and a condenser 413. The zea base 402 has a groove and an electrode (not labeled) located in the groove, and the LED chip 401 is flip-chip mounted in the groove of the shi ike base 402, and via the solder 414a and 414b is electrically connected to the electrodes in the recess. The electrodes in the recesses are connected to the external electrodes 406a and 406b on the heat sink 409 by solder lines 412a and 412b for connection to an external power source to provide power to the LED chip 401. The concentrating cup 413 is mounted on the heat sink 409 so that the light emitted from the illuminating diode chip 4〇1 can be concentrated. However, the above-mentioned conventional high-power LED package has the following disadvantages: 200913300, 1 This high-power LED package, phosphor is usually dispensed into the groove by dispensing. Since the light powder is not easily controlled during the dispensing process, the unevenness of the light is caused. Moreover, since the conventional LED package is connected to the contacts of the LED chip 4G1 by wire bonding, the process is complicated and it is difficult to achieve surface mounting. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method for fabricating a crystal-clearing and sealing device having a uniform luminescent phosphor layer and having a surface mountable light-emitting diode. In order to achieve the above object, the present invention provides a type: a method comprising: providing a plurality of grooves = a groove array, forming a plurality of via holes in the mother groove, and forming a corresponding portion at the bottom of the groove a plurality of bottom electrodes of the through hole: in the groove, and the light emitting diode 2: two: two holes are electrically connected, the array of the groove is cut into a plurality of bases and the mother and the money base have At least - the groove; the groove of the crucible base is filled to provide a ...d printing method to form a camping light on the protective glue; = and: used on the - flat surface - thus providing uniformity This can also be pre-made money ^ After the first piece of color temperature, the desired color temperature = nuclear reward, on behalf of the above print = see the second figure ' is a high-performance 200913300 rate according to a preferred embodiment of the present invention The method of manufacturing the LED package: Figure 'The method includes the following step 200 (see the third figure), the isotropic wet money engraving method, and the method has the majority of the concave: the use of the non-3 on the wafer 〇〇, where the non-isotropic wet engraving method = groove groove array TMAH (four Methylammonium hydroxide is used to carry out "Hai-Jian" or 矽 wafer and non-isotropic wet money =0. The insect crystal groove angle can be selected as 15-U 〇. More grooved ice is purchased for 00 ’ 'concave
步驟202 (復參見第三B 传用墼空七3 > 在母一凹槽之底部， 使料牙或疋呈射|虫刻方式形成兩個缺口， 人 金在缺口 302處形成兩個底部電極3(>4。 、·紹盃曰 先:見劃對應缺口之圖形3〇3，並進行 = 口 302之通孔（未標號）。 衣作對應缺 步驟施（復參見第三DS1)，在通孔上進行焊連， =先阻以形成導通孔（viah〇ie)3〇5，且有露出導通孔 305表面之對接電極3〇5a、3〇%。 步驟208 (復來見第二p罔、 310以费曰士 4 弟—E圖），將發光二極體晶片 =曰曰方式安置在每—凹槽上，並使發光二極體晶片 、，之电極（未標號）與對接電極305a、305b連接，以使 !光—極體晶片31〇可以藉由底部電極綱而獲得電力。 :發光二極體晶月31〇例如可以為一氮化鎵系(⑽如sed) π光每光一極體，且陰極及陽極都位於藍光發光二極體晶 片之一側。 200913300 步驟210，將凹槽中已經安裝好發光二極體晶片训 之凹槽陣列30(M刀割成石夕基座施，其中每一石夕基座施 可以視發光需求而具有一個或多數之凹槽。 步驟212 (復參見第三F圖），在所得結構上加上保 護膠320，以提供-平整之上表面。其中該保護勝32〇例 如可以為多層且分次塗佈之矽樹脂（silic〇ne )層，且矽樹 脂可以藉由調配成份及製程條件而改變折射率扣 index)，因此可以達成折射率匹配（制饮matching)的效果。 步驟214 (復參見第三GSI)，在所得結構上使用印 ，方式，塗佈一層螢光層322。依據本發明之一較佳具體 實例，該螢光層322係在黃光室環境下，使用刮刀將營= 粉溶液塗抹在平整的保鄉32〇上表面而成。該螢光粉溶 液例如可以為矽樹脂（silic〇ne)與YAG黃色 13之比例調配而成，且所形成之螢光層322厚度為5〇〜. 200微米，且與發光二極體晶片31〇之距離約為丨㈨微 米。 苓見第四圖，為依據上述流程所製作的高功率發光二 極體封裝。由於使用保護膠32()提供一 :— 再用印刷方式形成-榮光層322，因此可以達光 轉換效果。 』的先 苓見第六圖A及第六圖B所示，為發光二極體晶片 310之电極配置；參見第七圖所示，為鍍通孔邓$之上視 圖^假設對接電極305a、3〇5b已經去除），由此圖可以看 出發光二極體晶片310之電極31〇a，31〇b為兩個分離之電極 9 200913300 以避免短路，且具有不同之圖案設計以增加發光效率。再 者，對於每一個凹槽内的發光二極體晶片310 ,提供兩個 鍍通孔305以提供發光二極體晶片31〇之外接電力，以使 該發光二極體晶片310適於表面安裝用途。 參見第五圖，為依據本發明另一較佳具體實例之古 率發光二極體封裝製作方法之流程圖，該流程大致與=二 圖所不之流程類似，在原本的步驟214 (參見第二 以用貼上螢光片取代。該螢光片可以先由鋼模或是破璃模 :才吴具昼製並且固化後（步驟513A)，再篩選適度色温之 ，再將這些筛選好的營光片貼‘保 §又膠32G之平整上表面上（步驟514 ) 膠方式將誉光粉注入凹杯或是凹槽中，要在整個 體封裝完成後，才能進行色溫之篩選工作，合掸 不確定性。在本實施例之中，由日曰口衣程的 經固化，因此具有固定且均勾之色溫係數，可以在締ί 後，將預定色溫來數之螢异片忠 在師k之 上，這樣即可提升製程效率。 表面 呈有：’ §知本發明之發光二極體封裝製作方法已 八有產業湘性、新穎性與進步性， 曾見於同類產品及公開使用，完 r月之構造亦未 件，妥依專利法提出申請。王付合發明專利申請要 【圖式簡單說明】 知技術發光二極體封襄侧視圖。 —係依據本發明之一較佳具體實例之發光二極 200913300 體封裝製作方法流程圖。 第三A圖至第三G圖 係對應第二圖步驟之側視圖。 第四圖 係依據第二圖流程所製成發光二極體封裝側 視圖。 第五圖係依據本發明之另一較佳具體實例之發光二 極體封裝製作方法流程圖。 第六圖A及第六圖B所示為發光二極體之電極配置。 第七圖所示為鍍通孔之上視圖（假設對接電極已經去 f 除）。 【主要元件符號說明】 【習知】 發光二極體晶片401 外部電極406a，406b 焊錫 414a, 414b 散熱座409 黏膠404 矽基座402 焊接線412a，412b 聚光杯413 絕緣層403 【本發明】 凹槽陣列300 矽基座300a 缺口 302 底部電極304 導通孔305 對接電極305a、305b 發光二極體晶片310 保護膠320 螢光層322 11Step 202 (Review see the third B pass hollow 7 3 > at the bottom of the mother groove, make the teeth or 疋 project | the insect form forms two gaps, the human gold forms two bottoms at the notch 302 Electrode 3 (>4.·································································· Soldering is performed on the via hole, and the via hole is formed to form a via hole (3:5), and the butt electrode 3〇5a, 3〇% of the surface of the via hole 305 is exposed. Step 208 (Reviewed Two p罔, 310 is a gentleman's 4th brother-E diagram), the light-emitting diode wafer = 曰曰 is placed on each groove, and the light-emitting diode wafer, the electrode (not labeled) Connected to the butting electrodes 305a, 305b, so that the light-polar body wafer 31 can be powered by the bottom electrode. The light-emitting diode 31 can be, for example, a gallium nitride system ((10) such as sed). π light per light body, and the cathode and anode are located on one side of the blue light emitting diode chip. 200913300 Step 210, the light has been installed in the groove The polar wafer training groove array 30 (M knife is cut into a stone pedestal, wherein each of the pedestal pedestals can have one or more grooves depending on the illuminating demand. Step 212 (refer to the third F picture) A protective adhesive 320 is added to the resultant structure to provide a flat surface. The protective layer 32 can be, for example, a multi-layered and partially coated layer of bismuth resin, and the resin can be used. Adjusting the composition and process conditions and changing the index of index (index), so the effect of index matching (making match) can be achieved. Step 214 (see the third GSI), using the printing method on the resulting structure, coating a layer of firefly Light layer 322. According to a preferred embodiment of the present invention, the phosphor layer 322 is formed in a yellow light chamber environment, and a squeegee is used to apply a camping powder solution on the flat surface of the flat 32 〇. The powder solution may be prepared, for example, by the ratio of silica resin to YAG yellow 13, and the phosphor layer 322 is formed to have a thickness of 5 Å to 200 μm and a distance from the light-emitting diode wafer 31. About 丨 (nine) microns. See the fourth picture, for The high-power light-emitting diode package produced by the above process provides a light conversion effect by using a protective adhesive 32 () to provide a light-transfer layer 322. And shown in FIG. 6B, which is an electrode configuration of the LED chip 310; see the seventh figure, which is a plated through hole Deng$ above view ^ assuming that the butting electrodes 305a, 3〇5b have been removed), This figure shows that the electrodes 31〇a, 31〇b of the LED array 310 are two separate electrodes 9 200913300 to avoid short circuits and have different pattern designs to increase luminous efficiency. Furthermore, for each of the light-emitting diode wafers 310 in the recess, two plated through holes 305 are provided to provide external power to the light-emitting diode chip 31 to make the light-emitting diode wafer 310 suitable for surface mounting. use. Referring to FIG. 5, a flow chart of a method for fabricating a paleoluminescence LED package according to another preferred embodiment of the present invention is substantially similar to the process of the second embodiment, in the original step 214 (see the Secondly, it is replaced by a fluorescent sheet. The fluorescent sheet can be firstly made of steel mold or broken glass mold: after being cured and cured (step 513A), and then screening for moderate color temperature, and then screening these well. Yingguang film stickers 'guarantor § 32G on the flat upper surface (step 514) glue way to inject the reputation powder into the concave cup or the groove, the color temperature can be filtered after the whole body package is completed,掸 Uncertainty. In this embodiment, the curing process of the 曰 曰 衣 , , , 因此 因此 因此 因此 因此 因此 因此 因此 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣Above k, this can improve the efficiency of the process. The surface is: ' § Know that the method of manufacturing the LED package of the present invention has been industrialized, novel and progressive, has been seen in similar products and public use, finished The structure of r month is also unresolved. The application is filed by the law. Wang Fuhe's invention patent application [simplified description of the drawings] is a side view of the light-emitting diode package of the prior art. A flow chart of the method for manufacturing the package of the light-emitting diode 200913300 according to a preferred embodiment of the present invention. The third to third G drawings correspond to the side view of the second step. The fourth figure is a side view of the light emitting diode package according to the second process flow. The fifth figure is another preferred according to the present invention. A flow chart of a method for fabricating a light-emitting diode package according to a specific example. The sixth electrode A and the sixth figure B show the electrode arrangement of the light-emitting diode. The seventh figure shows the upper view of the plated through hole (assuming that the butt electrode has been [F>) [Main component symbol description] [Practical] LEDs 401 External electrodes 406a, 406b Solder 414a, 414b Heat sink 409 Adhesive 404 矽 Base 402 Solder wire 412a, 412b Spotlight 413 Insulation Layer 403 [Inventive] Groove array 300 矽 pedestal 300a Notch 302 Bottom electrode 304 Via 305 Butt electrode 305a, 305b Light-emitting diode wafer 310 Protective adhesive 320 Fluorescent layer 322 11