TWI577049B - Light emitting device - Google Patents

Description

Light-emitting element

The present invention relates to a light-emitting element, and more particularly to a light-emitting element having a light exit region and an electrode region substantially surrounding the light exit region.

Light Emitting Diode (LED) is a solid-state lighting component, which has the advantages of low power consumption, low thermal energy, long working life, shock resistance, small volume, fast response speed and good photoelectric characteristics, such as Stable light emission wavelength. Therefore, the light-emitting diodes are widely used in household appliances, equipment indicator lights, and optoelectronic products.

The light-emitting diode usually comprises a light-emitting layer and two electrodes, and an electric current is applied to the light-emitting layer through the two electrodes to cause light to emit light. In general, the electrodes are designed to diffuse current over the light-emitting stack such that the illuminable light-emitting regions are substantially the same surface area as the light-emitting stack. However, in other fields of application, it is necessary to inject a high current density current into a limited illumination area to improve luminous efficiency.

The present invention provides a light-emitting element comprising a light-emitting laminate having one side The wall and an active layer emit a light; and a light absorbing layer has a first portion surrounding the sidewall, the first portion being operable to absorb 50% of the light directed toward the light absorbing layer.

The present invention provides a light emitting device comprising: a light exiting region, wherein the light exiting region comprises a first semiconductor structure, a second semiconductor structure surrounding the first semiconductor structure, and a trench between the first semiconductor structure and the second semiconductor structure And an electrode region substantially surrounding the light exit region.

The above described features and advantages of the invention will be apparent from the following description.

10‧‧‧Substrate

11‧‧‧Connection layer

12‧‧‧reflective layer

13‧‧‧Lighting laminate

131‧‧‧First type semiconductor layer

132‧‧‧ active layer

133‧‧‧Second type semiconductor layer

1331‧‧‧ side wall

1332‧‧‧First District

1333‧‧‧Second District

15‧‧‧Ohm contact layer

16‧‧‧First electrode

161‧‧‧Internal

1611, 1612‧‧ internal

1631‧‧‧First Extension

1632‧‧‧Second extension

162‧‧‧External

164‧‧‧ convex

17‧‧‧second electrode

18‧‧‧Light absorbing layer

181‧‧‧ first part

182‧‧‧ second part

19‧‧‧Insulation

100, 200, 300‧‧‧Lighting elements

20‧‧‧ Ditch

22‧‧‧First semiconductor structure

221‧‧‧First extended electrode

222‧‧‧First ohmic contact layer

223‧‧‧first connecting electrode

24‧‧‧Second semiconductor structure

241‧‧‧Second extension electrode

242‧‧‧Second ohmic contact layer

243‧‧‧Second connection electrode

28‧‧‧First external electrode structure

38‧‧‧Second external electrode structure

281‧‧‧ Conductive layer

33‧‧‧ epitaxial structure

33S‧‧‧ top surface

331‧‧‧First type semiconductor layer

332‧‧‧ active layer

333‧‧‧Second type semiconductor layer

362‧‧‧Ohm contact layer

37‧‧‧ lower electrode

Fig. 1 is a top view of a light-emitting element of a first embodiment of the present invention.

Fig. 2 is a cross-sectional view of the light-emitting element of Fig. 1 taken along line AA ' .

Figure 3 is a top view of a light-emitting element of a second embodiment of the present invention.

Fig. 4 is a cross-sectional view of the light-emitting element of Fig. 3 taken along line BB ' .

Fig. 5A is a top view of a light-emitting element of a third embodiment of the present invention.

Fig. 5B is a cross-sectional view of the light-emitting element of Fig. 5A taken along XX ' .

Figure 6 is a top view of a light-emitting element of a third embodiment of the present invention.

Figure 7 is a top view of a light-emitting element of a third embodiment of the present invention.

In order to make the description of the present invention more detailed and complete, please refer to the following implementation. The description of the example is in conjunction with the relevant illustrations. However, the examples shown below are intended to exemplify the light-emitting elements of the present invention, and the present invention is not limited to the following examples. Further, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the present specification are not limited to the description, and the scope of the present invention is not limited thereto, and is merely illustrative. Further, the size, positional relationship, and the like of the members shown in the drawings may be exaggerated for clarity of explanation. Further, in the following description, in order to omit the detailed description, the same or similar members are denoted by the same names and symbols.

1 and 2 show a light-emitting element 100 according to a first embodiment of the present invention. The first drawing is a top view of the light-emitting element 100. Fig. 2 is a cross-sectional view of the light-emitting element 100 taken along line AA ' . The light emitting device 100 includes a substrate 10, a light emitting laminate 13 is disposed on the substrate 10, a reflective layer 12 is disposed between the substrate 10 and the light emitting laminate 13, and a bonding layer 11 is disposed between the reflective layer 12 and the substrate 10. The light emitting laminate 13 includes a first type semiconductor layer 131, a second type semiconductor layer 133, and an active layer 132 between the first type semiconductor layer 131 and the second type semiconductor layer 133. The first type semiconductor layer 131 and the second type semiconductor layer 133 provide electrons and holes, and the electrons and holes are combined in the active layer 132 to emit a light under a current drive. The material of the light-emitting layer 13 comprises a III-V semiconductor material such as Al _x In _y Ga _(1-xy) N or Al _x In _y Ga _(1-xy) P, where 0 ≦ x, y ≦ 1; (x +y)≦1. According to the material of the active layer 132, the light-emitting layer 13 can emit red light having a wavelength between 610 nm and 650 nm, green light having a wavelength between 530 nm and 570 nm, or blue light having a wavelength between 450 nm and 490 nm. The method of forming the light-emitting layer stack 13 is not particularly limited, and in addition to metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), evaporation, and ion plating may be used. method. The light emitting device 100 further includes a first electrode 16 on the second semiconductor layer 133, a second electrode 17 on the substrate 10, a light absorbing layer 18 on a portion of the first electrode 16, and an insulating layer 19 on the light absorbing layer. 18 is between the second type semiconductor layer 133. In the present embodiment, the first electrode 16 is a patterned electrode, including an inner portion 161, an outer portion 162, and a plurality of extension portions 163 electrically connecting the inner portion 161 and the outer portion 162. As shown in FIG. 2, the light-emitting element 100 further includes an ohmic contact layer 15 between the inner portion 161 and the light-emitting layer 13, and forms an ohmic contact with the inner portion 161 and the light-emitting layer 13, respectively. The shape of the ohmic contact layer 15 is substantially the same as the shape of the inner portion 161. The ohmic contact layer 15 is not formed between the outer portion 162 and the light emitting laminate 13. In another embodiment (not shown), the ohmic contact layer 15 is formed between the outer portion 162 and the light emitting laminate 13, and the shape of the ohmic contact layer 15 is substantially the same as the shape of the outer portion 162. The shape of the inner portion 161 and the outer portion 162 includes a circle, a square, a quadrangle or a polygon. When the shape of the inner portion 161 and the outer portion 162 is circular, the inner portion 161 and the outer portion 162 are concentric.

As shown in Fig. 2, the second type semiconductor layer 133 of the light-emitting layer 13 has a side wall 1331 and an upper surface. The upper surface has a first area 1332 and a second area 1333. The second zone 1333 is defined by the outer portion 162 formed on the first zone 1332 such that the first zone 1332 surrounds the second zone 1333, specifically, the outer zone 162 on the first zone 1332 surrounds the second zone 1333. The inner portion 161 is located on the portion of the second region 1333, and the inner portion 161 does not completely cover the second region 1333 to expose a portion of the second type semiconductor layer 133, so that the light from the active layer 132 is emitted from the exposed portion. yuan Outside the piece 100. The surface of the second region 1333 not covered by the inner portion 161 may be roughened by etching, such as dry etching or wet etching, to improve light extraction efficiency. The light absorbing layer 18 includes a first portion 181 surrounding the sidewall 1331 and a second portion 182 on the first region 1332 of the upper surface of the light emitting laminate 13. Specifically, the insulating layer 19 and the outer portion 162 are formed and covered on the first region 1332 of the upper surface of the second type semiconductor layer 133, and the second portion 182 of the light absorbing layer 18 is formed and covered on the insulating layer 19 and the outer portion 162. In addition, the insulating layer 19 covers the sidewalls 1331 of the light emitting laminate 13, and the first portion 181 covers the sidewalls of the insulating layer 19. As shown in FIG. 2, since the ohmic contact layer 15 is formed only between the inner portion 161 and the light emitting laminate 13, the light from the active layer 132 (ie, the second region) below the inner portion 161 has a first amount (also That is, more than 90%) is directly emitted from the light-emitting element 100 through the second region 1333, and the second amount (i.e., less than 10%) is incident on the light-absorbing layer 18 and is absorbed by the light-absorbing layer 18. In one embodiment, more than 50% of the second amount of light is absorbed by the light absorbing layer 18. In addition, light from the active layer 132 does not exit the light-emitting element 100 by the first region 1332 and the sidewalls 1331. The ratio of the area of the second region 1333 to the area of the upper surface of the light-emitting laminate 13 is between 10% and 90%, that is, the light-emitting area is defined as 10% to 90% of the area of the light-emitting laminate 13. The light absorbing layer 18 comprises a single layer or a plurality of layers and has a thickness greater than 300 Å. The material of the light absorbing layer 18 contains titanium (Ti), chromium (Cr), nickel (Ni), or a combination thereof. The first electrode 16 contains a metal or a metal alloy. The metal contains copper (Cu), aluminum (Al), gold (Au), lanthanum (La), or silver (Ag). Metal alloys include GeAu, BeAu, CrAu, AgTi, CuSn, CuZn, CuCd, Sn (Sn) -Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel-tin (NiSn), or nickel-cobalt (NiCo). The light absorbing layer 18 can be used as a pad to form an electrical connection under a current operation by a wire bond and an external structure (not shown), such as a package substrate.

In the present embodiment, the position where the reflective layer 12 is covered in the bonding layer 11 corresponds to the position of the second region 1333 of the upper surface of the light emitting laminate 13. When light from the active layer 132 is directed toward the substrate 10, the light may be reflected by the reflective layer 12 and toward the second type semiconductor layer 133. Since part of the light is emitted only through the second region 1333 of the upper surface of the second type semiconductor layer 133, the area of the reflective layer 12 is substantially the same as the area of the second region 1333 of the upper surface of the second type semiconductor layer 133. In another embodiment, the area of the reflective layer 12 may be larger than the area of the second region 1333 of the upper surface of the second type semiconductor layer 133.

3 and 4 show a light-emitting element 200 of a second embodiment of the present invention. 3 is a top view of the light emitting element 200. Fig. 4 is a cross-sectional view of the light-emitting element 200 taken along line BB ' . The structure of the light-emitting element 200 is similar to that of the light-emitting element 100 of the first embodiment except that the inner portion 161 of the light-emitting element 200 has two sub-internals 1611, 1612. The plurality of first extensions 1631 electrically connect the two inner portions 1611, 1612 and the outer portion 162. Either of the two sub-internals 1611, 1612 is electrically coupled to the outer portion 162 by a plurality of second extensions 1632. The first extension portion 1631 and the second extension portion 1632 are staggered. The outer portion 162 includes a plurality of protrusions 164. The second region 1333 is defined here by the outer portion 162 and the convex portion 164, wherein the light from the active layer 132 is only incident on the light emitting element 200 via the second region 1333. As shown in FIG. 4, the ohmic contact layer 15 is located between the two sub-internal portions 1611, 1612 and the light-emitting laminate 13 to provide an ohmic contact. The shape of the ohmic contact layer 15 is substantially the same as the two sub-internals 1611, 1612 of the inner portion 161. The ohmic contact layer 15 is not formed between the outer portion 162 and the light emitting laminate 13. In another embodiment (not shown), the ohmic contact layer 15 may be formed between the outer portion 162 and the light emitting laminate 13, and the shape of the ohmic contact layer 15 is substantially the same as the shape of the outer portion 162. The shape of the two sub-internals 1611, 1612 and the outer portion 162 of the inner portion 161 includes a circle, a square, a quadrangle or a polygon. When the two sub-internals 1611, 1612 and the outer portion 162 of the inner portion 161 are circular in shape, they are concentric with each other. The ratio of the area of the second region 1333 to the area of the upper surface of the light-emitting laminate 13 is between 10% and 90%. The number of internal and external can be adjusted according to the embodiment. The larger the area of the second region 1333 from which the light from the active layer 132 is emitted by the second region 1333, the greater the number of the inner portion 162 and the outer portion 162.

5A and 5B are a light-emitting element 300 according to a third embodiment of the present invention. Fig. 5A is a top view of a light-emitting element 300 of the third embodiment of the present invention. Fig. 5B is a cross-sectional view of the light-emitting element 300 of Fig. 5A taken along XX ' . As shown in FIG. 5A, the light-emitting element 300 includes a light-emitting area and an electrode area substantially surrounding the light-emitting area, wherein the light-emitting area is substantially located at the center of the light-emitting element 300, and the electrode area is a light-absorbing area, in other words, a non-light-emitting area. The shape of the light-emitting area in the upper view is substantially a circle, but the shape of the light-emitting area is not limited thereto, and may be a polygon, such as a triangle or a square. Taking the shape of the light-emitting area as a circle, the light-emitting area may be a circle having a diameter of between 0.004 and 0.5 mm, preferably a circle having a diameter of between 0.001 and 0.2 mm. The structure of the light-emitting element 300 is similar to that of the light-emitting element 100 of the first embodiment, except that the light-emitting element 300 includes a trench 20, and the trench 20 separates one of the epitaxial structures 33 of the light-emitting element 300 into a first semiconductor structure 22 and a first The second semiconductor structure 24, wherein the first semiconductor structure 22 is substantially circular in a top view, and the second semiconductor structure 24 surrounds the first semiconductor structure 22. The first semiconductor structure 22 and the second semiconductor structure 24 have substantially the same epitaxial structure 33, and the material composition and the stacked structure are substantially the same. The epitaxial structure 33 includes a first type semiconductor layer 331 and a second type semiconductor layer. 333, and an active layer 332 is located between the first type semiconductor layer 331 and the second type semiconductor layer 333. The trench 20 separates the active layer 332 and the second semiconductor layer 333 of the first semiconductor structure 22 from the active layer 332 and the second semiconductor layer 333 of the second semiconductor structure 24, but the first of the first semiconductor structures 22 The semiconductor layer 331 is connected to the first semiconductor layer 331 of the second semiconductor structure 24. The first semiconductor structure 22 is operated by a current, the active layer 332 of the first semiconductor structure 22 can emit a first light having a first dominant wavelength; the second semiconductor structure 24 is operated under a current, and the second semiconductor structure 24 The active layer 332 can emit a second light having a second dominant wavelength, wherein the first dominant wavelength and the second dominant wavelength are in the same wavelength range, or the dominant wavelength of the first light and the dominant wavelength of the second light Substantially the same, for example, the first dominant wavelength and the second dominant wavelength may be red light having a wavelength between 610 nm and 650 nm, green light having a wavelength between 530 nm and 570 nm, or a wavelength between 450 nm and 490 nm. Blu-ray.

In order to prevent the first light side emitted by the active layer 332 of the first semiconductor structure 22 from leaking to the second semiconductor structure 24, the trench 20 comprises one or more insulating layers, and the insulating material of the insulating layer can absorb the first light or can reflect the first Light. The insulating material contains an organic polymer material or an inorganic material.

A reflective layer 12 of the light emitting element 300 covers the first semiconductor structure 22 The upper portion is connected to a portion overlying the second semiconductor structure 24, wherein in a top view of the light-emitting element 300, the position of the reflective layer 12 is disposed corresponding to the position of the light-emitting region and the area of the reflective layer 12 is It is the same as or larger than the area of the light exit area. When the first light and/or the second light from the active layer 332 is directed toward the substrate 10, the first light and/or the second light may be reflected by the reflective layer 12 and toward the second type semiconductor layer 333, near the second One side of the semiconductor layer 333 emits light. Specifically, the first light and the second light are substantially all emitted from one of the top surfaces 33S of the light-emitting element 300. In one embodiment, the top surface 33S can form a roughened surface by etching or imprinting to improve the light extraction efficiency of the light emitting element 300.

As shown in FIG. 5A, the electrode region includes a plurality of outer electrode structures, and the plurality of outer electrode structures substantially surround the second semiconductor structure 24. The plurality of outer electrode structures include a first outer electrode structure 28 and a second outer electrode structure 38. Each of the outer electrode structures 28, 38 can be used as a pad by a wire bond and an outer portion. The structure (not shown), such as a package substrate, forms an electrical connection under a current operation. The first outer electrode structure 28 and the second outer electrode structure 38 respectively include an insulating layer 19 and a conductive layer 281 , wherein the insulating layer 19 is located between the second semiconductor structure 24 and the conductive layer 281 . The material of the conductive layer 281 contains a metal or a metal alloy. The metal contains lanthanum (La), copper (Cu), aluminum (Al), gold (Au), or silver (Ag). Metal alloys include GeAu, BeAu, CrAu, AgTi, CuSn, CuZn, CuCd, Sn (Sn) -Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel-tin (NiSn), or nickel-cobalt (NiCo).

As shown in FIG. 5A, the number of the first outer electrode structures 28 is a pair, The number of the two outer electrode structures 38 is a pair, wherein the pair of first outer electrode structures 28 are opposed to each other, the pair of second outer electrode structures 38 are opposed to each other, and the plurality of first outer electrode structures 28 and the plurality of second outer portions The electrode structures 38 are staggered with each other, but the number and arrangement of the first outer electrode structures 28 and the second outer electrode structures 38 are not limited to the above.

As shown in FIG. 5A, the light-emitting element 300 includes a plurality of extension electrodes on the epitaxial structure 33. Specifically, the plurality of extension electrodes include a first extension electrode 221 on the first semiconductor structure 22 and a second extension electrode 241 on the second semiconductor structure 24. The shape of the first extension electrode 221 or the second extension electrode 241 includes The ring shape, but the number and shape of the first extension electrode 221 and the second extension electrode 241 are not limited by the above and the drawings for the purpose of uniform current diffusion.

As shown in FIG. 5A, the light-emitting element 300 includes a first connection electrode 223 connecting the first extension electrode 221 and the first external electrode structure 28; and a second connection electrode 243 connecting the second extension electrode 241 and the second external electrode structure. 38.

The light emitting element 300 can selectively include an ohmic contact layer between the extended electrodes, such as the first extended electrode 221, the second extended electrode 241, and the epitaxial structure 33. As shown in FIG. 5B, the light-emitting element 300 includes a first ohmic contact layer 222 between the first extension electrode 221 and the second-type semiconductor layer 333; and a second ohmic contact layer 242 is located on the second extension electrode 241 and the second Between the two types of semiconductor layers 333. In another embodiment, the light emitting device 300 can include an ohmic contact layer 362 between the conductive layer 281 of the first outer electrode structure 28 and the second conductive semiconductor layer 333, and/or be located in the second outer electrode structure 38. Conductive layer 281 and second type semiconductor layer Between 333. The ohmic contact layers 222, 242 are substantially the same shape as the extended electrodes. By the ohmic contact layers 222, 242, 362, the contact resistance between the extension electrode and the second type semiconductor layer 333, and the contact resistance between the conductive layer 281 and the second type semiconductor layer 333 can be lowered.

As shown in FIG. 5B, the light-emitting element 300 includes a lower electrode 37 formed on a substrate 10. The lower electrode 37 can be electrically connected to the first type semiconductor layer 331 of the first semiconductor structure 22 and the first type semiconductor layer 331 of the second semiconductor structure 24 to form a light emitting element having a vertical electrode, and the substrate 10 is electrically conductive. The substrate of the substrate 10 comprises a semiconductor material or a metal material.

As shown in FIG. 5A, the first outer electrode structure 28 of the electrode region can serve as a first electrode group for receiving a first current value and forming a current path with the lower electrode 37 to drive the first semiconductor structure 22 to emit a first light having a first brightness; the second outer electrode structure 38 is different from the first electrode group and can be used as a second electrode group for receiving a second current value to drive the second semiconductor structure 24 to emit a a second light having a second brightness. The magnitude of the first brightness and the second brightness may be adjusted by the magnitude of the first current value and the second current value, or may be by the size of the first semiconductor structure 22 and the second semiconductor structure 24, such as the first semiconductor structure 22 The area of the active layer 332 is adjusted to the area of the active layer 332 of the second semiconductor structure 24. For example, when the active layer 332 of the first semiconductor structure 22 has an area smaller than the active layer 332 area of the second semiconductor structure 24, and the first current value is equal to the second current value, the first brightness may be greater than the second brightness. When the active layer 332 of the first semiconductor structure 22 has an area equal to the active layer 332 area of the second semiconductor structure 24, and the first current value is greater than the second current value, then A brightness will be greater than the second brightness.

The first electrode group and the second electrode group can receive current values individually or simultaneously. As shown in FIG. 5A, when only the first electrode group, that is, the first outer electrode structure 28, receives the first current value alone, only the first semiconductor structure 22 is driven to emit the first light. As shown in FIG. 6, when only the second electrode group, that is, the second outer electrode structure 38, receives the second current value alone, only the second semiconductor structure 24 is driven to emit the second light. As shown in FIG. 7, when the first electrode group and the second electrode group, that is, the first outer electrode structure 28 and the second outer electrode structure 38 respectively receive the first current value and the second current value, respectively, the first The semiconductor structure 22 and the second semiconductor structure 24 emit the first light and the second light simultaneously.

The above figures and descriptions are only corresponding to specific embodiments, however, the elements, embodiments, design criteria, and technical principles described or disclosed in the various embodiments are inconsistent, contradictory, or difficult to implement together. In addition, we may use any reference, exchange, collocation, coordination, or merger as required.

Although the invention has been described above, it is not intended to limit the scope of the invention, the order of implementation, or the materials and process methods used. Various modifications and variations of the present invention are possible without departing from the spirit and scope of the invention.

10‧‧‧Substrate

11‧‧‧Connection layer

12‧‧‧reflective layer

19‧‧‧Insulation

20‧‧‧ Ditch

22‧‧‧First semiconductor structure

221‧‧‧First extended electrode

222‧‧‧First ohmic contact layer

223‧‧‧first connecting electrode

24‧‧‧Second semiconductor structure

241‧‧‧Second extension electrode

242‧‧‧Second ohmic contact layer

243‧‧‧Second connection electrode

28‧‧‧First external electrode structure

281‧‧‧ Conductive layer

300‧‧‧Lighting elements

33‧‧‧ epitaxial structure

33S‧‧‧ top surface

331‧‧‧First type semiconductor layer

332‧‧‧ active layer

333‧‧‧Second type semiconductor layer

362‧‧‧Ohm contact layer

37‧‧‧ lower electrode

38‧‧‧Second external electrode structure

Claims (10)

A light emitting device comprising: a light exiting region comprising a first semiconductor structure, a second semiconductor structure surrounding the first semiconductor structure, and a trench between the first semiconductor structure and the second semiconductor structure; and an electrode a region, wherein the electrode region substantially surrounds the light exit region in an upper view of the light emitting element. The illuminating device of claim 1, wherein the electrode region comprises a plurality of external electrode structures, each of the outer electrode structures comprising an insulating layer and a conductive layer, wherein the insulating layer is located at the second semiconductor structure and Between the conductive layers. The illuminating device of claim 2, further comprising a first extension electrode on the first semiconductor structure and a second extension electrode on the second semiconductor structure, the plurality of external electrode structures including a first A pad is connected to the first extension electrode, and a second pad is connected to the second extension electrode. The light-emitting device of claim 1, further comprising a substrate and a reflective layer interposed between the substrate and the first semiconductor structure and the second semiconductor structure, wherein an area of the reflective layer and a light-emitting region are The area is the same or larger than the area of the light exit area. A light emitting device comprising: a first semiconductor structure; a second semiconductor structure; a first electrode group, configured to receive a first current value to drive the first semiconductor structure to emit a first light having a first brightness; and a second electrode group different from the first electrode group for receiving a second current value to drive the second semiconductor structure to emit a second light having a second brightness; wherein the second semiconductor structure surrounds the first semiconductor structure in an upper view of the light emitting element. The light-emitting element of claim 5, wherein the first electrode group and the second electrode group substantially surround the second semiconductor structure. The illuminating element of claim 5, wherein the first electrode group separately receives the first current value or the second electrode group separately receives the second current value. A light-emitting element comprises: a light-emitting layer having a sidewall, and comprising an active layer for emitting a light; a first electrode on the light-emitting layer, comprising an inner portion and an outer portion, and a plurality of extension portions electrically connecting the light-emitting layer The inner portion and the outer portion; and a light absorbing layer having a first portion surrounding the side wall of the light emitting layer for absorbing light emitted by the light emitting layer and directed toward the light absorbing layer. The light-emitting element of claim 8, wherein the light-emitting layer has an upper surface comprising a first region and a second region, and the light-absorbing layer has a second portion on the first region. A light-emitting element comprising: a light-emitting layer having a side wall and comprising an active layer for emitting a light; A first electrode on the light emitting layer comprises an inner portion and an outer portion, and a plurality of extension portions electrically connect the inner portion and the outer portion; and a light absorbing layer has a first portion surrounding the side wall of the light emitting layer.