CN102709432A - Network-shaped electrode applicable to high-power GaN-based LED chips - Google Patents
Network-shaped electrode applicable to high-power GaN-based LED chips Download PDFInfo
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- CN102709432A CN102709432A CN2012101423945A CN201210142394A CN102709432A CN 102709432 A CN102709432 A CN 102709432A CN 2012101423945 A CN2012101423945 A CN 2012101423945A CN 201210142394 A CN201210142394 A CN 201210142394A CN 102709432 A CN102709432 A CN 102709432A
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Abstract
The invention relates to the technical field of semiconductor illumination and provides a network-shaped electrode applicable to high-power GaN-based LED chips. Each electrode of a chip is composed of a network-shaped electrode and metal pads, the adopted electrodes at least have center inversion symmetry, secondary axial symmetry and quartic axial symmetry, wherein the secondary axial symmetry and the quartic axial symmetry are achieved by surrounding and being perpendicular to the center normal of the chip, and accordingly the electrodes can coincide when the chip rotates by 180 degrees, 270 degrees and 360 degrees around the center normal. A portion above an N-type GaN layer in an epitaxial layer is divided into multiple independent units not contacting with one another by the aid of N-type electrode slots on a projection plane perpendicular to the chip central axis, so that the units are unaffected by one another. Current distribution is more even by more electrode symmetry elements, and uneven heating of the chip is improved effectively. P-type metal pads and N-type metal pads can be selectively connected during routing by the aid of high symmetry of the P-type metal pads and the N-type metal pads, and accordingly flexibility of routing is improved.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, relate in particular to a kind of network-like electrode that is applicable to GaN based LED chip of great power, its CURRENT DISTRIBUTION is even, has photoelectric characteristic preferably.
Background technology
LED is a solid state light emitter of new generation, and it has, and volume is little, power consumption is low, long service life, high-luminous-efficiency, low in calories, environmental protection and energy saving, plurality of advantages such as sturdy and durable, thereby has wide application market.LED has obtained extensive use in fields such as backlight, traffic lights, large scale display, automotive lighting, decorative lightings at present.Along with the continuous maturation and the development of GaN base LED technology, based on the lighting of GaN based high-power led chip will be expected to become the 4th generation lighting source, have extremely application prospects.
At present, commercial GaN based light-emitting diode often on carborundum, monocrystalline silicon and Sapphire Substrate the method extension through chemical vapour deposition (CVD) prepare.The GaN based light-emitting diode generally has three kinds of structures: first kind is positive assembling structure, and the P type electrode of its chip and N type electrode are in same one side.Second kind is inverted structure, and its light-emitting diode chip for backlight unit tips upside down on the monocrystalline silicon, and the P type electrode of chip and N type electrode are bonded on the monocrystalline silicon through respective electrode.The third is a vertical stratification, and its P type electrode and N type electrode are separately positioned on the both sides of LED epitaxial loayer.
Adopt the GaN based light-emitting diode of Sapphire Substrate to adopt first kind positive assembling structure and second kind inverted structure usually.In positive assembling structure, generally be through the epitaxial wafer surface etch being formed mesa structure, P type electrode and N type electrode being arranged on the same side.Like this, can have the extending transversely of electric current inevitably, because electric current tends to away the less passage of resistance, the distribution of electrodes inequality will make the as easy as rolling off a log generation crowding effect of electric current.Like this, be easy to generate GaN based light-emitting diode degradation problem under luminous, useful life uneven, thereby influence the stability of GaN based light-emitting diode with heating.For powerful GaN based light-emitting diode, the phenomenon of current crowding and skewness is with even more serious.In order to make the flow through electric current of chip evenly distribute, be necessary to optimize electrode shape, distribute thereby improve current expansion, this has great importance to the photoelectric properties that improve GaN base LED.
Now, the electrode of GaN based high-power light-emitting diode chip adopt more N electrode, P electrode each other around the patterned electrodes structure.Though this structure has been improved current expansion to a certain extent; But; Because the distribution of electrodes of this structure does not possess higher symmetry, the electric current in cause flowing through P district and N district remains asymmetric distribution at regional area, so just produces the local current crowding effect inevitably.
Summary of the invention
The objective of the invention is to address the above problem, a kind of light-emitting diode with network-like electrode is provided, it is structurally symmetrical fully and can change electrode number as required; In addition; Its N type electrode place groove is divided into a plurality of independently unit with chip, can stop the flow direction of electric current in some direction, can overcome the unfavorable problem of the current expansion that exists in the electrode of current GaN based high-power light-emitting diode; Improve the uniformity of electric current distribution; Increase the light extraction efficiency of chip, improve the unequal problem of chip cooling, thereby promote the photoelectric characteristic of chip.
For realizing above-mentioned purpose, the present invention takes following technical scheme.
A kind of network-like electrode that is applicable to GaN based LED chip of great power; Contain substrate, P type electrode and N type electrode; Surface coverage at the P of said substrate type gallium nitride GaN has the ito thin film layer; It is characterized in that said substrate is divided into the table top of some symmetrical distributions by network-like groove, said groove is deep into the GaN layer of table top N type; But the GaN layer of N type is not done to cut apart, but quantum well layer, the superlattice layer on the N type GaN layer of the GaN layer of N type and extension thereof is divided into mutual disjunct part; Groove along the table top outer ring forms " L " shape table top; Said P type electrode comprises P type metal electrode and P type metal pad, is arranged on the P type ito thin film layer of mesa surfaces; Said N type electrode is the network-like electrode that comprises N type metal electrode and N type metal pad; Said N type metal electrode is the network-like strip electrode of interlaced formation; Be arranged on the mesa structure of table top, by silicon dioxide passivation layer or silicon nitride passivation is buried and with isolated by mesa edge and described groove; Said N type metal pad is arranged on the node place of said network-like N type metal electrode, and is isolated or isolated by described groove by described mesa edge and described groove.
Further, described substrate is a rectangular configuration, and its length is at least 762 microns with wide.
Further; Described P type metal electrode is the network-like strip electrode of interlaced formation; Be arranged on the ito thin film layer (being generally tin indium oxide ITO) of said mesa surfaces, said P type metal pad is arranged on the node place that said network-like P type metal electrode connects.
Further, said P type metal electrode is made up of independent P type metal pad, is arranged on the ito thin film layer of said mesa surfaces.
Further; Described N type metal electrode and N type metal pad and described P face metal electrode and P face metal pad have the center inversion symmetry at least and wind perpendicular to the secondary axial symmetry of chip center's normal and four axial symmetries (promptly; Chip is around centre normal Rotate 180 degree, when 270 degree and 360 are spent, and electrode all can overlap).
Optional, described P face metal electrode adopts and the identical or material different of N type metal electrode.
Further, said P face metal electrode and said N type metal electrode are the strip electrode that is superior to the electric conducting material making of ito thin film by electric conductivity.
Optional, the electric conducting material that said electric conductivity is superior to ito thin film is tin ash (SnO
2) mass percent is more than or equal to 10% ITO material.
The present invention is applicable to that the good effect of the network-like electrode of GaN based LED chip of great power is:
(1) compares with existing patterned electrodes structure; The symmetry elements of network-like electrode of the present invention are more, and network-like electrode has the center inversion symmetry at least and winds secondary axial symmetry perpendicular to the epitaxial wafer centre normal, four axial symmetries and six fold axis symmetry.
(2) because N type metal electrode is isolated by edges of substrate and groove; On perpendicular to axial projection of chip center plane; This network electrode is divided into a plurality of independently not contacted unit with the part on the N type GaN layer in the substrate epitaxial layer; Make current direction more even, greatly improved the distribution of electric current, thereby can improve the uneven problem of chip heating effectively.
(3) because the high symmetry of P type metal pad and N type metal pad when the chip routing, can be connected P type metal pad and N type metal pad selectively.
Description of drawings
Fig. 1 is applicable to the structural representation of first kind of embodiment of network-like electrode of GaN based LED chip of great power for the present invention.
Fig. 2 is applicable to the structural representation of second kind of embodiment of network-like electrode of GaN based LED chip of great power for the present invention.
Fig. 3 is applicable to the structural representation of network-like the third embodiment of electrode of GaN based LED chip of great power for the present invention.
Label among the figure is respectively:
1, table top; 2, groove; 3, P type ito thin film layer; 4, N type metal electrode; 5, N type metal pad;
51, a N type metal pad; 52, the 2nd N type metal pad; 53, the 3rd N type metal pad;
54, the 4th N type metal pad; 6, P type metal electrode; 7, P type metal pad;
71, a P type metal pad; 72, the 2nd P type metal pad; 73, the 3rd P type metal pad;
74, the 4th P type metal pad; 75, the 5th P type metal pad; 76, the 6th P type metal pad;
77, the 7th P type metal pad; 78, the 8th P type metal pad; 79, the 9th P type metal pad.
Embodiment
Continue to explain that below in conjunction with accompanying drawing the present invention is applicable to the practical implementation situation of the network-like electrode of GaN based LED chip of great power, 3 embodiment are provided.But enforcement of the present invention is not limited to following execution mode.
Referring to accompanying drawing 1.A kind of network-like electrode that is applicable to GaN based LED chip of great power; Employing is of a size of the chip of 1mm * 1mm, at first, etches groove 2 until the N layer in the front of GaN epitaxial loayer; Chip is divided into 4 table tops 1: the live width of table top 1 is 100 microns, and the live width of groove 2 is 30 microns; Described table top 1 is a rectangular configuration, and it is long and wide to be 762 microns.Said groove 2 does not thoroughly link to each other quantum well layer, superlattice layer, the P type GaN layer of these 4 table tops 1 on N type layer.Among the groove 2 with table top 1 on the depositing metal electrode, in the groove 2 with table top 1 on the metal live width be 20 microns.
The network-like electrode of N type electrode for constituting by the first N type metal pad 51, the 2nd N type metal pad 52, the 3rd N type metal pad 53, the 4th N type metal pad 54 and N type metal electrode 4; Said N type metal electrode 4 is the network-like strip electrode of interlaced formation; Be arranged on the mesa structure of table top 1, buried and with isolated by table top 1 edge and described groove 2 by silicon dioxide passivation layer; The diameter of a said N type metal pad 51, the 2nd N type metal pad 52, the 3rd N type metal pad 53, the 4th N type metal pad 54 is 120 microns, and alternative is arranged on four angle ends on the table top 1, the node place of promptly network-like N type metal electrode 4.
P type electrode comprises P type metal electrode 6 and a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74; Be arranged on the P type ito thin film layer 3 (being generally tin indium oxide ITO) of chip surface electrically conducting transparent, be the symmetry setting.Because the symmetry of a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74; A P type metal pad 71, the 3rd P type metal pad 73 and a N type metal pad 51,53 groups of metal pads of the 3rd N type metal pad be can connect, the 2nd P type metal pad 72, the 4th P type metal pad 74 and the 2nd N type metal pad 52,54 groups of metal pads of the 4th N type metal pad also can be connected; Can also connect a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74 and a N type metal pad 51, the 2nd N type metal pad 52, the 3rd N type metal pad 53,54 groups of metal pads of the 4th N type metal pad simultaneously, this has just improved the flexibility of network-like electrode routing technology of the present invention.
In the enforcement, said P face metal electrode 6 is the strip electrode that is superior to the electric conducting material making of ito thin film by electric conductivity with said N type metal electrode 4; The electric conducting material that said electric conductivity is superior to ito thin film is tin ash (SnO
2) mass percent is more than or equal to 10% ITO material.
In the enforcement, described P face metal electrode 6 can adopt and N type metal electrode 4 identical or material different.
Referring to accompanying drawing 2.A kind of network-like electrode that is applicable to GaN based LED chip of great power; Employing is of a size of 762 microns * 762 microns chip, at first, etches groove 2 until the N layer in GaN epitaxial loayer front; Chip is divided into 4 table tops 1: the live width of groove 2 is 23 microns, and the live width of table top 1 is 76 microns.Groove 2 does not thoroughly link to each other quantum well layer, superlattice layer, the P type GaN layer of these 4 table tops 1 on N type layer.Among the groove 2 with table top 1 on the depositing metal electrode, in the groove 2 with table top 1 on the metal live width be 15 microns.
The network-like electrode of N type electrode for constituting by N type metal pad 5 and N type metal electrode 4; Said N type metal electrode 4 is the network-like strip electrode of interlaced formation; Be arranged on the mesa structure of table top 1, buried and with isolated by table top 1 edge and described groove 2 by silicon dioxide passivation layer; The diameter of said N type metal pad 5 is 91 microns, is arranged on the middle position of network-like N type metal electrode 4.
P type electrode comprises a P type metal electrode 61, the 2nd P type metal electrode 62, the 3rd P type metal electrode 63, the 4th P type metal electrode 64 and a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74; Wherein, The one P type metal electrode 61 is arranged between a P type metal pad 71 and the 2nd P type metal pad 72; The 2nd P type metal electrode 62 is arranged between the 2nd P type metal pad 72 and the 3rd P type metal pad 73; The 3rd P type metal electrode 63 is arranged between the 3rd P type metal pad 73 and the 4th P type metal pad 74, and the 4th P type metal electrode 64 is arranged between the 4th a P type metal pad 74 and the P type metal pad 71.Described P type metal electrode and P type metal pad all are arranged on the P type ito thin film layer 3 (being generally tin indium oxide ITO) of chip surface electrically conducting transparent.
Because the symmetry of a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74; A P type metal pad 71, the 3rd P type metal pad 73 and 5 groups of metal pads of N type metal pad be can connect, the 2nd P type metal pad 72, the 4th P type metal pad 74 and 5 groups of metal pads of N type metal pad also can be connected; Can also connect a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74 and 5 groups of metal pads of N type metal pad simultaneously, make the flexibility of network-like electrode routing technology of the present invention.
Other implementation contents can be with reference to the content of embodiment 1.
Referring to accompanying drawing 3.A kind of network-like electrode that is applicable to GaN based LED chip of great power; Employing is of a size of 1500 microns * 1500 microns chip, at first, etches groove 2 until the N layer in GaN epitaxial loayer front; Chip is divided into 9 table tops 1: the live width of groove 2 is 45 microns, and the live width of table top 1 is 150 microns.Groove 2 does not thoroughly link to each other quantum well layer, superlattice layer, the P type GaN layer of these 9 table tops 1 on N type layer.Among the groove 2 with table top 1 on the depositing metal electrode, in the groove 2 with table top 1 on the metal live width be 30 microns.
The network-like electrode of N type electrode for constituting by the first N type metal pad 51, the 2nd N type metal pad 52, the 3rd N type metal pad 53, the 4th N type metal pad 54 and N type metal electrode 4; Said N type metal electrode 4 is the network-like strip electrode of interlaced formation; Be arranged on the mesa structure of table top 1, buried and do not contact with the sidewall of groove 2 and table top 1 by silicon nitride passivation; The diameter of a said N type metal pad 51, the 2nd N type metal pad 52, the 3rd N type metal pad 53, the 4th N type metal pad 54 is 180 microns, and selectivity is arranged on four angle ends on the table top 1, also is the node place of network-like N type metal electrode 4.
P type electrode comprises P type metal electrode 6 and a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, the 5th P type metal pad 75, the 6th P type metal pad 76, the 7th P type metal pad 77, the 8th P type metal pad 78, the 9th P type metal pad 79; Wherein, P type metal electrode 6 is provided with between described nine P type metal pads, forms a network-like P type electrode.Said network-like P type electrode is arranged on the P type ito thin film layer 3 (being generally tin indium oxide ITO) of chip surface electrically conducting transparent.
Because the symmetry of a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, the 5th P type metal pad 75, the 6th P type metal pad 76, the 7th P type metal pad 77, the 8th P type metal pad 78, the 9th P type metal pad 79, can connect a P type metal pad 71, the 5th P type metal pad 75, the 9th P type metal pad 79 and the 2nd N type metal pad 52,54 groups of metal pads of the 4th N type metal pad; Also can connect the 3rd P type metal pad 73, the 5th P type metal pad 75, the 7th P type metal pad 77 and a N type metal pad 51,53 groups of metal pads of the 3rd N type metal pad; Can also connect a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, the 5th P type metal pad 75, the 6th P type metal pad 76, the 7th P type metal pad 77, the 8th P type metal pad 78, the 9th P type metal pad 79 and a N type metal pad 51, the 2nd N type metal pad 52, the 3rd N type metal pad 53,54 groups of metal pads of the 4th N type metal pad simultaneously, make the flexibility of network-like electrode routing technology of the present invention.
Other implementation contents can be with reference to the content of embodiment 1.
The above is merely preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from structure of the present invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as in protection scope of the present invention.
Claims (8)
1. network-like electrode that is applicable to GaN based LED chip of great power; Contain substrate, P type electrode and N type electrode; Surface coverage at the P of said substrate type gallium nitride GaN has the ito thin film layer; It is characterized in that said substrate is divided into the table top (1) of some symmetrical distributions by network-like groove (2), said groove (2) is deep into the GaN layer of table top (1) N type; But the GaN layer of N type is not done to cut apart, but quantum well layer, the superlattice layer on the N type GaN layer of the GaN layer of N type and extension thereof is divided into mutual disjunct part; Groove (2) along table top (1) outer ring forms " L " shape table top; Said P type electrode comprises P type metal electrode (6) and P type metal pad, is arranged on the P type ito thin film layer (3) on table top (1) surface; Said N type electrode is for comprising the network-like electrode of N type metal electrode (4) and N type metal pad (6); Said N type metal electrode (4) is the network-like strip electrode of interlaced formation; Be arranged on the mesa structure of table top (1), by silicon dioxide passivation layer or silicon nitride passivation is buried and with isolated by table top (1) edge and described groove (2); Said N type metal pad (5) is arranged on the node place of said network-like N type metal electrode (4), and is isolated or isolated by described groove (2) by described table top (1) edge and described groove (2).
2. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1 is characterized in that described substrate is a rectangular configuration, and its length is at least 762 microns with wide.
3. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1; It is characterized in that; Described P type metal electrode (6) is the network-like strip electrode of interlaced formation; Be arranged on the ito thin film layer on said table top (1) surface, said P type metal pad (7) is arranged on the node place that said network-like P type metal electrode (6) connects.
4. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1 is characterized in that, said P type metal electrode (6) is made up of independent P type metal pad (7), is arranged on the ito thin film layer on said table top (1) surface.
5. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1; It is characterized in that described N type metal electrode (4) has the center inversion symmetry at least and winds secondary axial symmetry and four axial symmetries perpendicular to chip center's normal with P face metal pad (7) with N type metal pad (5) and described P face metal electrode (6).
6. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1 is characterized in that, described P face metal electrode (6) adopts and the identical or material different of N type metal electrode (4).
7. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1; It is characterized in that said P face metal electrode (6) is the strip electrode that is superior to the electric conducting material making of ito thin film by electric conductivity with said N type metal electrode (4).
8. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 7 is characterized in that, the electric conducting material that said electric conductivity is superior to ito thin film is tin ash SnO
2Mass percent is more than or equal to 10% ITO material.
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| CN2012101423945A CN102709432A (en) | 2012-05-10 | 2012-05-10 | Network-shaped electrode applicable to high-power GaN-based LED chips |
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| CN106887512A (en) * | 2015-12-16 | 2017-06-23 | 三星电子株式会社 | Circuit board and the semiconductor light emitting device packaging piece using the circuit board |
| CN110729322A (en) * | 2019-10-22 | 2020-01-24 | 厦门乾照光电股份有限公司 | Vertical LED chip structure and manufacturing method thereof |
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| CN110783435A (en) * | 2018-07-31 | 2020-02-11 | 日亚化学工业株式会社 | Semiconductor light emitting element |
| CN111864021A (en) * | 2019-04-24 | 2020-10-30 | 深圳第三代半导体研究院 | Vertical integrated unit diode chip |
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| CN111933768B (en) * | 2019-04-25 | 2022-05-06 | 深圳第三代半导体研究院 | Vertical integrated unit diode chip |
| CN111900152A (en) * | 2019-05-06 | 2020-11-06 | 深圳第三代半导体研究院 | Integrated unit diode chip |
| CN110931614A (en) * | 2019-05-08 | 2020-03-27 | 深圳第三代半导体研究院 | Front-mounted integrated unit diode chip |
| CN110729322A (en) * | 2019-10-22 | 2020-01-24 | 厦门乾照光电股份有限公司 | Vertical LED chip structure and manufacturing method thereof |
| TWI840665B (en) | 2021-05-04 | 2024-05-01 | 晶元光電股份有限公司 | Semiconductor device and semiconductor component including the same |
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Application publication date: 20121003 |