CN102891226A - Manufacturing method of high-voltage alternating semiconductor LED (light-emitting diode) chips - Google Patents
Manufacturing method of high-voltage alternating semiconductor LED (light-emitting diode) chips Download PDFInfo
- Publication number
- CN102891226A CN102891226A CN2012103809470A CN201210380947A CN102891226A CN 102891226 A CN102891226 A CN 102891226A CN 2012103809470 A CN2012103809470 A CN 2012103809470A CN 201210380947 A CN201210380947 A CN 201210380947A CN 102891226 A CN102891226 A CN 102891226A
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- chip
- voltage alternating
- emitting diode
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to the design and manufacturing of LED (light-emitting diode) chips, and relates to a manufacturing method of a high-voltage alternating semiconductor LED chip. The manufacturing method comprises the following steps: (1) providing a sapphire substrate; (2) forming a compound GaN semiconductor layer; (3) growing a transparent conductive layer and three electrodes; (4) carrying out deep etching on a cutting channel; (5) filling a side wall; (6) thinning the sapphire substrate; and (7) cutting, splitting and expanding a membrane. The preparation method provided by the invention is conductive to lowering the production cost and improving the using efficiency, and is suitable for industrial large-scale production; and the high-voltage alternating semiconductor LED chip provided by the method provided by the invention has the advantages of the high-voltage alternating chip, also can prevent a complex connecting mode, can be used for reducing the occupied area of the chip, achieving LED chip integration and facilitating the realization of the serial and parallel connection of chips, and has the advantages of a functional component.
Description
Technical field
The present invention relates to technical field of semiconductor, relate to design and the manufacturing of led chip, concrete is a kind of GaN base duplex (NPN, PNP) light-emitting diode chip for backlight unit and manufacture method thereof of directly indirect current.
Background technology
Light-emitting diode (LED) is solid state light emitter of new generation, has that volume is little, power consumption is low, long service life, luminous efficiency is high, heat is low, environmental protection and energy saving, the plurality of advantages such as sturdy and durable, is widely used in image demonstration, signal designation and illuminating lamp field.In recent years, under the drive of new technology, research and the manufacturing of gallium nitride (GaN) based light-emitting diode obtain fast development.Being acknowledged as at present the significant achievement of photoelectron science and technology based on the LED of GaN base, is the key light source of development solid-state illumination, the human illumination of realization revolution, is with a wide range of applications.But just present, can be less for the efficient high power chip product of using, this is restricting gallium nitride (GaN) based light-emitting diode in the application of illuminating industry always, becomes the Main Bottleneck problem that it replaces the traditional lighting technology that hinders.In order to reach high-power requirement, existing LED manufacturing enterprise is producing the high power DC single-chip, also has enterprise that a kind of integrated high-power high voltage led chip of low-power LED by series connection can be provided.
Therefore traditional LED, if when using alternating-current power supply, must convert alternating current to normal operation that direct current just can be guaranteed LED with subsidiary rectifier transformer take direct current as driving power.But what people emphasized on using always is the electricity-saving characteristic of LED, and at alternating current to galvanic transfer process, have the electric power up to 15～30% to be consumed, therefore, such use can not embody the electricity-saving characteristic.So present high power DC single-chip can't embody the electricity-saving characteristic of LED in application.
In view of this, some enterprises provide a kind of led chip of high-voltage alternating, and it is by the low-power LED string and connects and integrated high-power high voltage led chip, can directly lead to 110V or 220V alternating current.In the use, when voltage was forward bias voltage drop, electric current can flow out along a direction, made it luminous by diode; When voltage was reverse bias, electric current made the lumination of light emitting diode of another side toward flowing in the other direction; Reduce like this power consumption in the circuit, improved power consumption efficiency.AC LED sees through the special circuit design and can directly drive with alternating current, and need not configure rectifier transformer also can normal operation.So in the design of lighting, AC LED lamp generally all more has superiority than DC LED light fixture aspect volume and weight.Yet the led chip of present high-voltage alternating only is the simple connection in series-parallel of small-power chip, the complicated structure of its assembly, if a node occurs unusually, whole chip is cisco unity malfunction all.In addition, its area occupied is relatively large, is unfavorable for integrated more chip.
Summary of the invention
The object of the invention is to address the above problem, a kind of manufacture method of high-voltage alternating semiconductor light-emitting diode chip is provided, adopts the high-voltage alternating semiconductor LED chip of the method manufacturing of this invention, the electricity-saving characteristic that can embody LED, reduce the area occupied of chip, realize the connection in series-parallel of chip; Manufacture method of the present invention can be carried out the large-scale production of described led chip, satisfies the market demand of GaN base LED chip.
For achieving the above object, the present invention takes following technical scheme.
A kind of manufacture method of high-voltage alternating semiconductor light-emitting diode chip is characterized in that, may further comprise the steps:
(1) provides Sapphire Substrate
Described Sapphire Substrate comprises first surface and the second surface corresponding with described first surface, and described substrate comprises plain film substrate or PSS substrate;
(2) form compound GaN semiconductor layer
At the first surface growing epitaxial of the Sapphire Substrate of step (1), form the compound GaN semiconductor layer of PNP or NPN type;
(3) growth transparency conducting layer and three electrodes
Three electrodes by photoetching and etching growth transparency conducting layer and NPN or PNP on the GaN semiconductor layer that step (2) forms;
(4) deep etching of Cutting Road
Carry out deep etching at single chips Cutting Road, until till the Sapphire Substrate, realize the separation of single chips photoelectric characteristic, the triangle chip group of electrically being separated;
Then, utilize vapour deposition process in the sidewall silicon dioxide passivation layer of growing, realize the filling of sidewall;
(5) sidewall is filled
Adjacent chip chamber evaporation metal in same module makes the corresponding PN electrode of the metal interconnection chip of evaporation;
(6) attenuate Sapphire Substrate
Side attenuate Sapphire Substrate at the second surface of the Sapphire Substrate of step (1);
(7) cutting, sliver, expansion film
Carry out laser cutting from the first surface of described Sapphire Substrate along the integration module Cutting Road, carry out sliver from the second surface of described Sapphire Substrate, expand integrated chip---the high-voltage alternating semiconductor light-emitting diode chip that obtains separating behind the film.
Further, the described Sapphire Substrate of step (1) comprises plain film Sapphire Substrate or graphic sapphire substrate (PSS substrate).
Further, step (2) is described adopts organic metal vapour deposition process (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxial method (LPE) or vapour phase epitaxy method (VPE) to finish at the first surface growing epitaxial.
Good effect of the present invention is:
Preparation method of the present invention is conducive to reduce production costs, and improves service efficiency, is fit to large-scale industrialization production.High-voltage alternating semiconductor light-emitting diode chip with method manufacturing of the present invention has advantages of the high-voltage alternating chip, can avoid again complicated connected mode, can reduce the area occupied of chip, realize that led chip is integrated, be convenient to realize the connection in series-parallel of chip, have the advantage of functional unit.
Description of drawings
Fig. 1 is the FB(flow block) of the manufacture method of high-voltage alternating semiconductor light-emitting diode chip of the present invention.
Fig. 2 is the structural front view of plain film Sapphire Substrate.
Fig. 3 is the structure vertical view of plain film Sapphire Substrate.
Fig. 4 is the structural front view of the plain film Sapphire Substrate of the compound GaN semiconductor layer of formation.
Fig. 5 is the structural front view of transparency conducting layer and three electrodes.
Fig. 6 is the structural front view after the Cutting Road of single chips carries out etching.
Fig. 7 is the structural front view after filling at the sidewall of etching formation.
Fig. 8 is the structural front view of the plain film Sapphire Substrate behind the second surface attenuate.
Fig. 9 is the structure vertical view of single chips.
Figure 10 is the structural representation of single module.
Figure 11 is the modular structure vertical view on wafer.
Figure 12 is the fundamental diagram of high-voltage alternating semiconductor light-emitting diode chip.
Label among the figure is respectively:
101, plain film Sapphire Substrate; 102, lower floor's N-type GaN layer; 103, lower floor's multiple quantum trap layer;
104, P type GaN layer; 105, upper strata multiple quantum trap layer; 106, upper strata N-type GaN layer;
107, transparency conducting layer; 108, the N of lower floor electrode; 109, P electrode;
110, upper strata N electrode; 111, silicon dioxide layer; 112, alternating current source.
Embodiment
Continue the implementation situation of the manufacture method of explanation high-voltage alternating semiconductor light-emitting diode chip of the present invention below in conjunction with accompanying drawing.But enforcement of the present invention is not limited to following execution mode.
Illustrate: accompanying drawing of the present invention is schematic diagram, expression among the figure is illustrative nature, in the drawings, for clear reaction principle of the present invention and structure, thickness to layer and zone has been done suitable adjustment, they strictly do not reflect the proportionate relationship of set size as schematic diagram, therefore, schematic diagram of the present invention can not be used to limit the scope of the invention.
A kind of manufacture method of high-voltage alternating semiconductor light-emitting diode chip may further comprise the steps (referring to accompanying drawing 1):
(1) provide Sapphire Substrate, described Sapphire Substrate is plain film Sapphire Substrate 101, and its main TV structure is referring to accompanying drawing 2, and its plan structure figure is referring to accompanying drawing 3.Described plain film Sapphire Substrate 101 diameters are 2 inches, and its burnishing surface (front) is called first surface, and its back side is second surface;
It should be noted that in addition in force, described Sapphire Substrate also can be used sapphire patterned substrate.
(2) growing epitaxial on the first surface of the plain film Sapphire Substrate 101 of step (1) forms the compound GaN semiconductor layer of PNP or NPN type.Described compound GaN semiconductor layer comprises that successively the N-type GaN of the lower floor layer 102, lower floor's multiple quantum trap layer 103, P type GaN layer 104 and the upper strata multiple quantum trap layer 105 that form and upper strata N-type GaN layer 106(are referring to accompanying drawing 4).
In the enforcement, described growing epitaxial at first surface can adopt epitaxial growth method commonly used of the prior art, and namely organic metal vapour deposition process (MOCVD) is finished; In addition, also can adopt molecular beam epitaxy (MBE), liquid phase epitaxial method (LPE) or vapour phase epitaxy method (VPE) to finish.
(3) on the epitaxially grown compound GaN semiconductor layer of step (2) by photoetching and etching, at upper strata N-type GaN layer 106 growth transparency conducting layer 107, at the N-type GaN of the lower floor layer 102 growth N of lower floor electrode 108, at P type GaN layer 104 growth P electrode 109, grow upper strata N electrode 110(referring to accompanying drawing 5 at transparency conducting layer 107); Wherein, transparency conducting layer 107 is by electron beam evaporation deposition technology evaporation tin indium oxide, and the thickness of described tin indium oxide is right at 2000 Izods; In addition, P electrode 109 is for adopting photoetching and the stacked two or more metal of evaporation coating technique to obtain, and described stacked metal comprises chromium, platinum and gold.
(4) on the Cutting Road of single chips, carry out deep etching by photoetching and lithographic technique, until etch into Sapphire Substrate (referring to accompanying drawing 6); Realize the separation of single chips photoelectric characteristic, the triangle chip group of electrically being separated.
(5) sidewall that forms in step (4) etching is filled, and the medium of filling adopts the reasonable silicon dioxide (SiO of insulating properties
2).Its concrete mode is: adopt vapour deposition process to carry out the growth of silicon dioxide passivation layer 111, realize the filling (referring to accompanying drawing 7) of sidewall.
Adjacent chip chamber evaporation metal in same module makes the corresponding PN electrode of the metal interconnection adjacent chips of evaporation.
(6) at the back side of the plain film Sapphire Substrate 101 of step (1), be a side of second surface by grinding and polishing technology attenuate plain film Sapphire Substrate 101, plain film Sapphire Substrate 101 is thinned to the thickness (referring to accompanying drawing 8) of 90um.
The plan structure of single chips is seen accompanying drawing 9.
(7) do not carry out the Cutting Road that sidewall fills along plain film Sapphire Substrate 101 and carry out laser cutting, carry out sliver from second surface, then, expand film, expand integrated chip---the high-voltage alternating semiconductor light-emitting diode chip that obtains separating behind the film.The structure of single module is seen accompanying drawing 10, and the modular structure on wafer is seen accompanying drawing 11.
The operation principle of the high-voltage alternating semiconductor light-emitting diode chip made from method of the present invention is (referring to accompanying drawing 12):
Diode by alternating current and unilateal conduction forms current circuit.The circulating direction of electric current as shown by arrows in FIG..Each independent chip can be regarded two PN junctions as, two public N of PN junction (or P) electrode, and when electric current has a direction to enter PN junction, because special connected mode, only can be luminous with one of them PN junction conducting; When the sense of current reversed, another PN junction was lighted luminous.Described PN junction only has half to be lit within the whole time, because the frequency of alternating current is higher, so as if human eye looks all that chip is all lighted luminous simultaneously.
The high-voltage alternating semiconductor light-emitting diode chip made from the manufacture method of high-voltage alternating semiconductor light-emitting diode chip of the present invention, take the led chip of NPN (or PNP) type as the basis, has advantages of the high-voltage alternating chip, the connected mode and the shortcoming that takies larger area of common high-voltage LED chip complexity have been overcome, production and use cost have been reduced, realized that led chip is integrated, be convenient to realize the connection in series-parallel of chip, had the advantage of functional unit.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the inventive method; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1. the manufacture method of a high-voltage alternating semiconductor light-emitting diode chip is characterized in that, may further comprise the steps:
(1) provides Sapphire Substrate
Described Sapphire Substrate comprises first surface and the second surface corresponding with described first surface, and described substrate comprises plain film substrate or PSS substrate;
(2) form compound GaN semiconductor layer
At the first surface growing epitaxial of the Sapphire Substrate of step (1), form the compound GaN semiconductor layer of PNP or NPN type;
(3) growth transparency conducting layer and three electrodes
Three electrodes by photoetching and etching growth transparency conducting layer and NPN or PNP on the GaN semiconductor layer that step (2) forms;
(4) deep etching of Cutting Road
Carry out deep etching at single chips Cutting Road, until till the Sapphire Substrate, realize the separation of single chips photoelectric characteristic, the triangle chip group of electrically being separated;
Then, utilize vapour deposition process in the sidewall silicon dioxide passivation layer of growing, realize the filling of sidewall;
(5) sidewall is filled
Adjacent chip chamber evaporation metal in same module makes the corresponding PN electrode of the metal interconnection chip of evaporation;
(6) attenuate Sapphire Substrate
Side attenuate Sapphire Substrate at the second surface of the Sapphire Substrate of step (1);
(7) cutting, sliver, expansion film
Carry out laser cutting from the first surface of described Sapphire Substrate along the integration module Cutting Road, carry out sliver from the second surface of described Sapphire Substrate, expand integrated chip---the high-voltage alternating semiconductor light-emitting diode chip that obtains separating behind the film.
2. the manufacture method of high-voltage alternating semiconductor light-emitting diode chip according to claim 1 is characterized in that, the described Sapphire Substrate of step (1) comprises plain film Sapphire Substrate or graphic sapphire substrate.
3. the manufacture method of high-voltage alternating semiconductor light-emitting diode chip according to claim 1, it is characterized in that, step (2) is described to adopt organic metal vapour deposition process, molecular beam epitaxy, liquid phase epitaxial method or vapour phase epitaxy method to finish at the first surface growing epitaxial.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103809470A CN102891226A (en) | 2012-10-10 | 2012-10-10 | Manufacturing method of high-voltage alternating semiconductor LED (light-emitting diode) chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103809470A CN102891226A (en) | 2012-10-10 | 2012-10-10 | Manufacturing method of high-voltage alternating semiconductor LED (light-emitting diode) chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102891226A true CN102891226A (en) | 2013-01-23 |
Family
ID=47534678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012103809470A Pending CN102891226A (en) | 2012-10-10 | 2012-10-10 | Manufacturing method of high-voltage alternating semiconductor LED (light-emitting diode) chips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102891226A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715321A (en) * | 2013-12-13 | 2014-04-09 | 浙江亿米光电科技有限公司 | Fan-shaped LED chip and manufacturing method thereof |
| CN104934457A (en) * | 2015-06-29 | 2015-09-23 | 聚灿光电科技股份有限公司 | High-voltage LED chip based isolation structure and isolation method |
| CN104953012A (en) * | 2015-06-29 | 2015-09-30 | 广东德力光电有限公司 | AC-LED (alternating current-light emitting diode) chip and application thereof |
| CN109545937A (en) * | 2018-12-29 | 2019-03-29 | 佛山市国星半导体技术有限公司 | A kind of high brightness side plating flip LED chips and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452975A (en) * | 2007-12-04 | 2009-06-10 | 杨秋忠 | Wafer stage encapsulation LED chip and manufacturing method thereof |
| CN102194952A (en) * | 2010-03-09 | 2011-09-21 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
| CN102610626A (en) * | 2012-03-09 | 2012-07-25 | 映瑞光电科技(上海)有限公司 | Alternating-current LED device with Wheatstone bridges and manufacturing method thereof |
-
2012
- 2012-10-10 CN CN2012103809470A patent/CN102891226A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452975A (en) * | 2007-12-04 | 2009-06-10 | 杨秋忠 | Wafer stage encapsulation LED chip and manufacturing method thereof |
| CN102194952A (en) * | 2010-03-09 | 2011-09-21 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
| CN102610626A (en) * | 2012-03-09 | 2012-07-25 | 映瑞光电科技(上海)有限公司 | Alternating-current LED device with Wheatstone bridges and manufacturing method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715321A (en) * | 2013-12-13 | 2014-04-09 | 浙江亿米光电科技有限公司 | Fan-shaped LED chip and manufacturing method thereof |
| CN103715321B (en) * | 2013-12-13 | 2017-01-04 | 浙江亿米光电科技有限公司 | The LED chip of a kind of sector structure and manufacture method thereof |
| CN104934457A (en) * | 2015-06-29 | 2015-09-23 | 聚灿光电科技股份有限公司 | High-voltage LED chip based isolation structure and isolation method |
| CN104953012A (en) * | 2015-06-29 | 2015-09-30 | 广东德力光电有限公司 | AC-LED (alternating current-light emitting diode) chip and application thereof |
| CN104934457B (en) * | 2015-06-29 | 2017-10-10 | 聚灿光电科技股份有限公司 | Isolation structure and partition method based on high voltage LED chip |
| CN109545937A (en) * | 2018-12-29 | 2019-03-29 | 佛山市国星半导体技术有限公司 | A kind of high brightness side plating flip LED chips and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102315353B (en) | Inverted integrated LED and production method thereof | |
| CN102509731B (en) | Alternating current vertical light emitting element and manufacture method thereof | |
| CN105529382B (en) | A kind of LED epitaxial slice of reddish yellow light and the preparation method of chip | |
| CN103151447B (en) | A kind of double-side diode structure and preparation method thereof | |
| CN102891226A (en) | Manufacturing method of high-voltage alternating semiconductor LED (light-emitting diode) chips | |
| CN103762222A (en) | Modularized array high-voltage LED chip and method for manufacturing modularized array high-voltage LED chip | |
| CN108010996A (en) | A kind of AlGaInP light emitting diodes and preparation method thereof | |
| CN102709432A (en) | Network-shaped electrode applicable to high-power GaN-based LED chips | |
| CN102064250B (en) | Substrate-glaring SiC substrate vertical structure light-emitting tube and preparation method thereof | |
| CN103700741B (en) | Low-voltage power-type LED (Light-emitting Diode) with large current density and manufacture method thereof | |
| CN102255012B (en) | Manufacturing method and structure of high-voltage direct-current light-emitting diode chip | |
| CN201282152Y (en) | Center circumambient shape GaN-based LED chip electrode | |
| CN103779450A (en) | Integration method for increasing luminous power of LED | |
| CN106784229B (en) | A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption | |
| CN106206865B (en) | A kind of high-voltage LED and preparation method thereof | |
| CN202405304U (en) | LED chip structure for improving current transmission blocking | |
| CN105280757A (en) | Preparation method of high-voltage LED chip with vertical structure | |
| CN102903805A (en) | Method for manufacturing inverted high-voltage AC/DC (alternating current/direct current) LED (light-emitting diode) | |
| CN106531869A (en) | Convex type LED chip structure and manufacturing method thereof | |
| CN108050476B (en) | Intelligent courtyard LED lamp | |
| CN201266611Y (en) | Tree-shaped GaN-based LED chip electrode | |
| CN205900580U (en) | Reddish yellow light emitting diode chip | |
| CN203503698U (en) | High-lighting-effect LED chip for LED lamp | |
| CN205016529U (en) | A LED light source that is used for chip of LED light source and uses its preparation | |
| CN204130576U (en) | The GaN film of growth on Zr substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130123 |