CN109545937A - A kind of high brightness side plating flip LED chips and preparation method thereof - Google Patents
A kind of high brightness side plating flip LED chips and preparation method thereof Download PDFInfo
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- CN109545937A CN109545937A CN201811636105.0A CN201811636105A CN109545937A CN 109545937 A CN109545937 A CN 109545937A CN 201811636105 A CN201811636105 A CN 201811636105A CN 109545937 A CN109545937 A CN 109545937A
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- 238000007747 plating Methods 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title description 2
- 239000002184 metal Substances 0.000 claims abstract description 173
- 229910052751 metal Inorganic materials 0.000 claims abstract description 173
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000005253 cladding Methods 0.000 claims abstract description 53
- 238000005520 cutting process Methods 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000007771 core particle Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
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- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
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- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910020286 SiOxNy Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 238000003698 laser cutting Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
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- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
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- 230000005496 eutectics Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
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Abstract
The invention discloses a kind of high brightness sides to plate flip LED chips, including substrate, light emitting structure, Cutting Road, the first hole, the second hole, the first metal supporting layer, the second metal supporting layer, first electrode, second electrode, the first insulating layer, second insulating layer and side metal cladding, the side metal cladding is covered on the side wall of substrate and second insulating layer.Correspondingly, the present invention also provides a kind of production methods of high brightness side plating flip LED chips.The present invention forms one layer of side metal cladding in the side wall of substrate and light emitting structure, the light that chip sides issue is reflected, issue more light from the axial direction of chip, to increase the axial amount of light of chip, chip " leakage is blue " is prevented, improves the brightness of chip, furthermore, the light emitting angle that chip can also be reduced improves photochromic purity.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of high brightness side plating flip LED chips and its systems
Make method.
Background technique
Light emitting diode (Light-Emitting Diode, LED) with energy conservation and environmental protection, safety durable, photoelectricity due to turning
The features such as rate is high, controllability is strong, is widely used in the related fieldss such as display, automotive lighting, general illumination.
At present LED chip structure be broadly divided into formal dress, vertically with three kinds of upside-down mounting, formal dress structure LED chip is due to P electrode
In the presence of that can partially absorb to the light generation that chip issues, to limit the light extraction efficiency of chip, the LED chip of positive assembling structure is usual
Using Sapphire Substrate as passage of heat, sapphire heat dissipation performance is poor, and heat can not distribute in time, leads to junction temperature of chip
It is excessively high, to influence the reliability and service life of chip.And compared with positive assembling structure, inverted structure but has preferable heat dissipation
Ability can accelerate heat in the LED chip upside-down mounting of inverted structure to the substrate with more high thermal conductivity by eutectic welding technique
The export of amount, reliability is higher, and the service life is longer.In addition to this, the LED chip of inverted structure also has current distribution equal
Even, voltage reduces many advantages such as antistatic effect height, thus in recent years inverted structure LED obtained in lighting area it is fast
The development of speed.However flip LED chips can have " leakage is blue " phenomenon in use, i.e. part light can be leaked from chip sides
Out, cause Axial-running Out light to reduce, influence the photochromic purity of light out.Although existing white wall packaging technology can be certain on the market
It is reduced in degree chip sides " leakage is blue ", but since the disadvantages of its complex process and uncontrollable precision leads to chip packaging yield
It is low, stability is poor, considerably increase production cost.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of high brightness side plating flip LED chips, in light emitting structure
Side wall form side metal cladding, increase the Axial-running Out light of chip, improve chip brightness, and prevent chip " leakage is blue ".
Originally return and provide a kind of production method of high brightness side plating flip LED chips, can be formed thickness uniformly, effect
Good side metal cladding.
In order to solve the above-mentioned technical problems, the present invention provides a kind of high brightness side plate flip LED chips, including substrate,
Light emitting structure, Cutting Road, the first hole, the second hole, the first metal supporting layer, the second metal supporting layer, first electrode, second
Electrode, the first insulating layer, second insulating layer and side metal cladding, the light emitting structure include the first half be sequentially arranged on substrate
Conductor layer, active layer, the second semiconductor layer, transparency conducting layer and metallic reflector, the Cutting Road are located at the side of light emitting structure
Edge, first hole are etched to the first semiconductor layer from metallic reflector, and second hole is etched to from metallic reflector
The surface of second semiconductor layer, first insulating layer are covered on surface and the side wall of light emitting structure, and extend to the first hole
With the side wall of the second hole, first metal supporting layer is filled in the first hole and extends to the surface of the first insulating layer,
Second metal supporting layer is filled in the surface in the second hole and extending to the first insulating layer, the first metal supporting layer and the
Two metal supporting layer mutually insulateds, the second insulating layer are covered on the first metal supporting layer, the second metal supporting layer, first absolutely
The surface of edge layer and side wall, the side surface of second insulating layer are flushed with the side surface of substrate, the first electrode and the first metal
Supporting layer connection, the second electrode are connect with the second metal supporting layer, and the side metal cladding is covered on substrate and second absolutely
The side wall of edge layer.
As an improvement of the above scheme, the side metal cladding is made of Ag and/or Al, the thickness of the side metal cladding
It is 4000-18000 angstroms.
Correspondingly, the present invention also provides a kind of production methods of high brightness side plating flip LED chips, comprising:
LED wafer is provided, the LED wafer includes substrate and multiple luminous micro-structures on substrate；
The substrate of LED wafer is cut by laser, is formed without cutting crack；
LED wafer after cutting is placed on film, and yellow light processing is carried out to the LED wafer after cutting, forms light
Photoresist exposure mask；
Sliver is carried out to yellow light treated LED wafer, expands film, forms more core particles, and core particles are overturn to high temperature resistant
Film on so that the substrate of core particles is upward；
One layer of side metal cladding is formed in the side wall deposition of core particles；
Remove the photoresist exposure mask and metal on substrate.
As an improvement of the above scheme, the method for forming side metal cladding includes: that LED wafer is tilted 0-30 °, using steaming
Plating method forms one layer of side metal cladding in the side wall deposition of core particles.
As an improvement of the above scheme, it is passed through the inert gas that flow is 10-20sccm, wherein the noble gas body is nitrogen
Gas and/or argon gas.
As an improvement of the above scheme, the film size after expanding film is 1.3-1.8 times of original film size.
As an improvement of the above scheme, yellow light processing the following steps are included:
Photoresist is coated on the substrate of LED wafer, forms photoresist exposure mask；
LED wafer is dried；
LED wafer after drying is exposed.
As an improvement of the above scheme, the LED wafer production method the following steps are included:
Light emitting structure is formed on the substrate, the light emitting structure includes the first semiconductor layer being sequentially arranged on substrate, has
Active layer, the second semiconductor layer, transparency conducting layer and metallic reflector；
Light emitting structure is performed etching, Cutting Road, the first hole and the second hole are formed；
The first insulating layer is formed, first insulating layer is covered on surface and the side wall of light emitting structure, and extends to first
The side wall of hole and the second hole；
The first metal supporting layer and the second metal supporting layer are formed, first metal supporting layer is filled in the first hole
And the surface of the first insulating layer is extended to, second metal supporting layer is filled in the second hole and extends to the first insulating layer
Surface, the first metal supporting layer and the second metal supporting layer mutually insulated；
Second insulating layer is formed, the second insulating layer is covered on the first metal supporting layer, the second metal supporting layer, first
The surface of insulating layer and side wall；
It forms first electrode and second electrode, the first electrode is connect with the first metal supporting layer, the second electrode
It is connect with the second metal supporting layer.
As an improvement of the above scheme, the side of second insulating layer is flushed with the side of substrate.
As an improvement of the above scheme, the side metal cladding is made of Ag and/or Al, the thickness of the side metal cladding
It is 4000-18000 angstroms.
The invention has the following beneficial effects:
1, the present invention forms one layer of side metal cladding in the side wall of substrate and light emitting structure, the light that chip sides are issued
It is reflected, issues more light from the axial direction of chip, to increase the axial amount of light of chip, prevent chip " leakage
It is blue ", the brightness of chip is improved, further, it is also possible to reduce the light emitting angle of chip, improves photochromic purity.
2, the present invention is by the mutual cooperation of Cutting Road, the first insulating layer and second insulating layer, and by second insulating layer
Side is flushed with the side of substrate, could be uniform in the side wall of substrate and light emitting structure formation thickness, the good side plating of reflecting effect
Metal layer could increase the axial amount of light of chip by side metal cladding.
3, the material and thickness of the invention by metallic reflector is defined, to guarantee the reflection effect of side metal cladding
Fruit, and issue more light from the axial direction of chip.
4, the production method of a kind of high brightness side plating flip LED chips provided by the invention, be cut by laser by free from flaw,
Yellow light processing, sliver, the mutual cooperation for expanding film, overturning to the kinds of processes such as film resistant to high temperature, could be heavy in the side wall of core particles
Product forms the side metal cladding that a layer thickness is uniform, reflecting effect is good.
5, the production method of a kind of high brightness side plating flip LED chips provided by the invention, it is yellow by being carried out to LED wafer
Light processing, so that the metal deposited on photoresist exposure mask and photoresist exposure mask on substrate can be removed by developer solution, without
Complicated degumming process.
6, the production method of a kind of high brightness side plating flip LED chips provided by the invention, carries out the substrate of LED wafer
Laser cutting forms and also avoids the photoetching in subsequent yellow light technique while guaranteeing to form single core particles without cutting crack
Glue penetrates into the side wall for the micro-structure that shines by crack, ensure that effect is plated in side.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of plating flip LED chips in high brightness side of the present invention；
Fig. 2 is the top view of plating flip LED chips in high brightness side of the present invention；
Fig. 3 is the structural schematic diagram of LED wafer of the present invention；
Fig. 4 is that LED wafer of the present invention forms the schematic diagram after photoresist exposure mask；
Fig. 5 is LED wafer sliver of the present invention, expand film, in overturning to film resistant to high temperature after schematic diagram；
Fig. 6 is the schematic diagram after core particles inclination of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
Referring to Fig. 1 and Fig. 2, flip LED chips, including substrate 10, light-emitting junction are plated in a kind of high brightness side provided by the invention
Structure, Cutting Road, the first hole, the second hole, the first metal supporting layer 31, the second metal supporting layer 32, first electrode 41, second
Electrode 42, the first insulating layer 50, second insulating layer 60 and side metal cladding 70.
The material of substrate 10 of the present invention can be sapphire, silicon carbide or silicon, or other semiconductor materials.It is preferred that
, substrate 10 of the invention is Sapphire Substrate.
Light emitting structure includes the first semiconductor layer 21, active layer 22, the second semiconductor layer 23, electrically conducting transparent set gradually
Layer 24 and metallic reflector 25.First semiconductor layer 21 provided by the invention is n type gallium nitride base, and the second semiconductor layer 23 is
P-type gallium nitride based layer, active layer 22 are MQW quantum well layer.
The material of transparency conducting layer 24 of the present invention is indium tin oxide, but not limited to this.Indium and tin in indium tin oxide
Ratio is (70-99): (1-30).Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.Transparent lead favorably is improved in this way
The conductive capability of electric layer, prevents carrier from flocking together, and also improves the light extraction efficiency of chip.
Metallic reflector 25 of the invention is made of Ag and/or Al.In addition, can also be adulterated in metallic reflector 25 Ni,
One or more of Ti, W and Pt metal.Metallic reflector 25 of the invention is used to reflect the light of active layer sending, makes more
Light towards one side of substrate issue.
In other embodiments of the invention, the laminations knot such as buffer layer is additionally provided between the substrate 10 and light emitting structure
Structure.
Cutting Road is etched to the surface of substrate 10 from metallic reflector 25, wherein and Cutting Road is located at the side wall of light emitting structure,
It is used to form multiple light emitting structures.First hole is etched to the first semiconductor layer 21 from metallic reflector 25, and the second hole is from gold
Belong to the surface that reflecting layer 24 is etched to the second semiconductor layer 23.
First insulating layer 50 is covered on surface and the side wall of light emitting structure, for protecting light emitting structure, and makes the first gold medal
Belong to supporting layer 31 and 32 mutually insulated of the second metal supporting layer, chip is avoided to leak electricity.Further, first insulating layer 50 from
Transparency conducting layer 25 extends to the side wall of the first hole and the second hole.Preferably, the first insulating layer 50 is by SiO2、SiOxNyWith
SiNxOne or more of be made.First insulating layer 50 can be single or multi-layer structure.
First metal supporting layer 31 is filled in the first hole and extends to the surface of the first insulating layer 50, the second metal branch
Support layer 32 is filled in the second hole and extends to the surface of the first insulating layer 50, wherein on 50 surface of the first insulating layer
First metal supporting layer 31 and the second metal supporting layer 32 are to disconnect, therefore the two mutually insulated.First metal supporting layer 31 is used
In connection first electrode 41 and the first semiconductor layer 21, the second metal supporting layer 32 is led for connecting second electrode 42 and the second half
Body layer 23 prevents chip subsequent in addition, the first metal supporting layer 31 and the second metal supporting layer 32 also provide support for chip
Technique in be easy to happen fracture, be ground since chip is subsequent, sliver, expand film, the techniques such as transfer.First metal branch
Support layer 31 and the second metal supporting layer 32 are made of one or more of Cr, Ni, Al, Ti, Pt, Au, Ag and W metal.
Second insulating layer 60 be covered on the first metal supporting layer 31, the second metal supporting layer 32, the first insulating layer 50 table
Face and side wall.The present invention deposits second insulating layer on the surface of metal supporting layer, for including metal supporting layer.In addition,
Second insulating layer is formed on one insulating layer, not only can further protect chip, is also convenient for the subsequent side wall in chip and is formed side
Metal cladding.Preferably, the side surface of second insulating layer 60 is flushed with the side surface of substrate 10.Preferably, second insulating layer 60
By SiO2、SiOxNyAnd SiNxOne or more of be made.Second insulating layer 60 can be single or multi-layer structure.
First electrode 41 is connect with the first metal supporting layer 31, and the second electrode 42 and the second metal supporting layer 32 connect
It connects.Specifically, first electrode 41 is arranged in second insulating layer 60, and run through second insulating layer 60 and the first metal supporting layer 31
Connection, second electrode 42 are arranged in second insulating layer 60, and connect through second insulating layer 60 with the second metal supporting layer 32.
Preferably, first electrode 41 and second electrode 42 are made of one or more of Cr, Ni, Al, Ti, Pt, Au and Sn.
Side metal cladding 70 is covered on the side wall of substrate 10 and second insulating layer 60, for reflecting the light of chip sides sending
Line, so that the axial amount of light of chip increases, to keep the smaller light emitting anger of chip, brightness and photochromic purity higher.In addition, by
In the presence of side metal cladding 70, influence of the encapsulation process to chip yield and stability is greatly reduced, chip is conducive to
Secondary optical design.
Specifically, core particles, in sprayed with fluorescent powder, the fluorescent powder thickness in sapphire face is greater than side under normal conditions
Thickness, can be different by the optical purity that the fluorescent powder of different-thickness inspires, it is excited if core particles side has light
Light out will affect the purity of core particles, the present invention weakened by side metal cladding or avoid side go out light i.e. and can be improved it is photochromic pure
Degree.
Preferably, side metal cladding 70 is made of Ag and/or Al.In addition, can also be adulterated in side metal cladding 70 Ni,
One or more of Ti, W and Pt metal.
Wherein, the thickness of side metal cladding 70 plays an important role to the reflecting effect of chip.Preferably, the side plating
Metal layer 70 with a thickness of 4000-18000 angstroms.If the thickness of side metal cladding 70 is lower than 4000 angstroms, side plating effect is poor, reflection
It is ineffective；If the thickness of side metal cladding 70 is greater than 18000 angstroms, reflecting effect reaches saturation, and cost and process time increase
Add, in addition, the thickness of side metal cladding is too thick to generate many heats, subsequent photoresist is caused to be not easy to remove.
Correspondingly, the present invention also provides a kind of production methods of high brightness side plating flip LED chips, comprising:
S101, LED wafer is provided, the LED wafer includes substrate and multiple luminous micro-structures on substrate；
Referring to Fig. 3, the LED wafer includes substrate 10 and multiple luminous micro-structures 20 on the substrate 10, described
The micro-structure 20 that shines includes the first semiconductor layer 21, active layer 22, the second semiconductor layer 23, Cutting Road, the first hole, the second hole
Hole, the first metal supporting layer 31, the second metal supporting layer 32, first electrode 41, second electrode 42, the first insulating layer 50 and second
Insulating layer 60.
It should be noted that light emitting structure is divided into multiple luminous micro-structures by Cutting Road, wherein be covered on luminous micro-structure
The first insulating layer 50 and second insulating layer 60 on side wall are filled in Cutting Road, Cutting Road are filled up, and second insulating layer 60
Side flushed with the side of substrate 10.
The production method of the LED wafer the following steps are included:
S201, light emitting structure is formed on the substrate；
The light emitting structure includes the first semiconductor layer being sequentially arranged on substrate, active layer, the second semiconductor layer, transparent
Conductive layer and metallic reflector.
The material of substrate 10 of the present invention can be sapphire, silicon carbide or silicon, or other semiconductor materials.It is preferred that
, substrate 10 of the invention is Sapphire Substrate.
Specifically, forming epitaxial layer on 10 surface of substrate using MOCVD device, the epitaxial layer includes being set on substrate 10
The first semiconductor layer 21, active layer 22 on the first semiconductor layer 21 and the second half on active layer 22 lead
Body layer 23.
Specifically, the first semiconductor layer 21 provided by the invention is n type gallium nitride base, the second semiconductor layer 23 is p-type
Gallium nitride based layer, active layer 22 are MQW quantum well layer.
It should be noted that in the other embodiments of the application, the substrate 10 and first semiconductor layer 21 it
Between be equipped with caching rush the laminations such as layer.
Layer of transparent conductive layer 24 is formed on the second semiconductor layer 23.The material of transparency conducting layer 24 of the present invention is indium tin
Oxide, but not limited to this.The ratio of indium and tin is 50-99:1-30 in indium tin oxide.Preferably, indium in indium tin oxide
Ratio with tin is 95:5.The conductive capability for favorably improving transparency conducting layer in this way, prevents carrier from flocking together, also improves
The light extraction efficiency of chip.
Form one layer of metallic reflector over transparent conductive layer using the method for electron beam evaporation or magnetron sputtering.This hair
Bright metallic reflector 25 is made of Ag and/or Al.In addition, can also be adulterated in Ni, Ti, W and Pt in metallic reflector 25
One or more of metals.Metallic reflector 25 of the invention is used to reflect the light of active layer sending, makes more light towards substrate
Side issues.
S202, light emitting structure is performed etching, forms Cutting Road, the first hole and the second hole；
The Cutting Road is located at the edge of light emitting structure, and is etched to substrate surface, first hole from metallic reflector
Hole is etched to the first semiconductor layer from metallic reflector, and second hole is etched to the second semiconductor layer from metallic reflector
Surface.
S203, the first insulating layer is formed, first insulating layer is covered on surface and the side wall of light emitting structure, and extends to
The side wall of first hole and the second hole；
First is formed absolutely on the surface of light emitting structure and side wall deposition using plasma gas enhancing chemical vapour deposition technique
Edge layer.First insulating layer of the invention supports the first metal supporting layer 31 and the second metal for protecting light emitting structure
32 mutually insulated of layer, avoid chip from leaking electricity.Further, first insulating layer 50 extends to the first hole from transparency conducting layer 25
The side wall in hole and the second hole.Preferably, the first insulating layer 50 is by SiO2、SiOxNyAnd SiNxOne or more of be made.The
One insulating layer 50 can be single or multi-layer structure.
S204, the first metal supporting layer and the second metal supporting layer are formed；
Using electron beam evaporation method or magnetron sputtering method in the surface of the first insulating layer, the first hole and the second hole
It fills metal and forms the first metal supporting layer and the second metal supporting layer.Wherein, first metal supporting layer is filled in first
Hole is interior and extends to the surface of the first insulating layer, and second metal supporting layer is filled in the second hole and extends to first
The surface of insulating layer, the first metal supporting layer and the second metal supporting layer mutually insulated.Specifically, being located on the first insulating layer
First metal supporting layer and the second metal supporting layer are to disconnect.
First metal supporting layer 31 is used for connecting first electrode 41 and the first semiconductor layer 21, the second metal supporting layer 32
In connection second electrode 42 and the second semiconductor layer 23, in addition, the first metal supporting layer 31 and the second metal supporting layer 32 are also
Chip provides support, prevents chip to be easy to happen fracture in subsequent technique, is ground, is split since chip is subsequent
Piece expands the techniques such as film, transfer.First metal supporting layer 31 and the second metal supporting layer 32 are by Cr, Ni, Al, Ti, Pt, Au, Ag
It is made with one or more of W metal.
S205, second insulating layer is formed, the second insulating layer is covered on the first metal supporting layer, the support of the second metal
Layer, the surface of the first insulating layer and side wall；
Using plasma gas enhancing chemical vapour deposition technique in the first metal supporting layer, the second metal supporting layer, first
The surface of insulating layer and side wall deposition form second insulating layer.
The present invention deposits second insulating layer on the surface of metal supporting layer, for including metal supporting layer.In addition, first
Second insulating layer is formed on insulating layer, not only can further protect chip, is also convenient for the subsequent side wall in chip and is formed side plating
Metal layer.Preferably, the side surface of second insulating layer 60 is flushed with the side surface of substrate 10.Preferably, second insulating layer 60 by
SiO2、SiOxNyAnd SiNxOne or more of be made.Second insulating layer 60 can be single or multi-layer structure.
S206, formation first electrode and second electrode, the first electrode are connect with the first metal supporting layer, and described second
Electrode is connect with the second metal supporting layer；
Using electron beam evaporation method in second insulating layer surface deposited metal, first electrode and second electrode are formed.Specifically
, first electrode 41 is arranged in second insulating layer 60, and connect through second insulating layer 60 with the first metal supporting layer 31, the
Two electrodes 42 are arranged in second insulating layer 60, and connect through second insulating layer 60 with the second metal supporting layer 32.Preferably,
First electrode 41 and second electrode 42 are made of one or more of Cr, Ni, Al, Ti, Pt, Au and Sn.
It should be noted that light emitting structure is divided into multiple luminous micro-structures by Cutting Road, wherein the luminous micro-structure packet
Include the first semiconductor layer, active layer, the second semiconductor layer, transparency conducting layer, metallic reflector, the first insulating layer, the second insulation
Layer, the first metal supporting layer, the second metal supporting layer, first electrode and second electrode, wherein be covered on light emitting structure side wall
The first insulating layer and second insulating layer be filled in Cutting Road, Cutting Road is filled up, and the side of second insulating layer and substrate
Side flush.
S102, the substrate of LED wafer is cut by laser, is formed without cutting crack；
Substrate is cut along Cutting Road by the way of recessiveness cutting or surface cutting, is formed without cutting crack.
Luminous micro-structure after cutting is not completely isolated, that is, shines between micro-structure and luminous micro-structure without cutting crack.Specifically
, can be realized by adjusting laser cutting process parameter without cutting crack, observe under the microscope sapphire surface have a scratch and
Free from flaw.
If occurring cutting crack between the micro-structure that shines and luminous micro-structure, photoetching is just had in subsequent yellow light technique
Glue penetrates into the side wall for the micro-structure that shines by crack, influences side plating effect.
S103, the LED wafer after cutting is placed on film, and yellow light processing, shape is carried out to the LED wafer after cutting
At photoresist exposure mask；
Referring to fig. 4, the LED wafer after cutting is placed on film, and the LED wafer after cutting is carried out at yellow light
Reason forms photoresist exposure mask 70.
Specifically, yellow light processing the following steps are included:
Photoresist is coated on the substrate of LED wafer, forms photoresist exposure mask；
LED wafer is dried；
LED wafer after drying is exposed.
Photoresist exposure mask of the invention avoids metal deposit from influencing one side of substrate on substrate for protecting substrate surface
Light out.Specifically, photoresist exposure mask can accelerate moisture evaporation curable photoresist through overbaking, after step of exposure, on substrate
Photoresist exposure mask and photoresist exposure mask on the metal that deposits can be removed by developer solution without complicated degumming process.
S104, sliver is carried out to yellow light treated LED wafer, expands film, form more core particles, and core particles are overturn to resistance to
On the film of high temperature, so that the substrate of core particles is upward；
Referring to Fig. 5, to yellow light, treated that LED wafer carries out sliver, expands film, forms more core particles, and core particles are overturn
On to film 80 resistant to high temperature, so that the substrate of core particles is upward.
Sliver is carried out to LED wafer using breaking machine, forms more core particles, core particles are then subjected to expansion film process, and will
LED core particle after expanding film is overturn to high temperature film, so that the substrate of core particles is upward wherein, the film size after expanding film is original
1.3-1.8 times of film size.
Since the present invention needs to form side metal cladding in the side wall of core particles, need to form between core particles it is certain away from
From the present invention meets this requirement by expanding film.Preferably, the film size after expanding film is the 1.3- of original film size
1.8 again.If the too small evaporation effect that will affect side metallized reflective layer of spacing increases the original of side plating metal if spacing is excessive
Material, to increase cost.
Wherein, the high temperature resistant temperature of the high temperature film is 100 DEG C or more.When due to subsequent vapor deposition side metal cladding, chamber
The surface of body and core particles can generate certain temperature, side metal cladding component different temperatures is also different, therefore vapor deposition uses
Film need to be resistant to certain high temperature.
S105, side wall deposition one layer of side metal cladding of formation in core particles；
Specifically, side metal cladding 70 is covered on the side wall of substrate 10 and second insulating layer 60, for reflecting chip sides
The light of sending, so that the axial amount of light of chip increases, to make the smaller light emitting anger of chip, brightness and photochromic purity more
It is high.Further, since the presence of side metal cladding 70, greatly reduces influence of the encapsulation process to chip yield and stability, has
Conducive to the secondary optical design of chip.
Specifically, core particles, in sprayed with fluorescent powder, the fluorescent powder thickness in sapphire face is greater than side under normal conditions
Thickness, can be different by the optical purity that the fluorescent powder of different-thickness inspires, it is excited if core particles side has light
Light out will affect the purity of core particles, the present invention weakened by side metal cladding or avoid side go out light i.e. and can be improved it is photochromic pure
Degree.
Preferably, side metal cladding 70 is made of Ag and/or Al.In addition, can also be adulterated in side metal cladding 70 Ni,
One or more of Ti, W and Pt metal.
Wherein, the thickness of side metal cladding 70 plays an important role to the reflecting effect of chip.Preferably, the side plating
Metal layer 70 with a thickness of 4000-18000 angstroms.If the thickness of side metal cladding 70 is lower than 4000 angstroms, side plating effect is poor, reflection
It is ineffective；If the thickness of side metal cladding 70 is greater than 18000 angstroms, reflecting effect reaches saturation, and cost and process time increase
Add, in addition, the thickness of side metal cladding is too thick to generate many heats, subsequent photoresist is caused to be not easy to remove.
Need to illustrate the, the method for forming side metal cladding include:
Referring to Fig. 6, core particles are tilted 0-30 °, the side wall deposition using vapour deposition method in core particles forms one layer of side metal cladding；
Specifically, can be realized by the movement of adjusting core particles microscope carrier or rotation speed and the tilt angle of microscope carrier.The present invention will
Core particles inclination, could form the side metal cladding that effect is good, yield is high.If tilt angle exceeds above range, side plating metal
The deposition effect of layer is bad, and in uneven thickness, preset value is not achieved in reflectivity.
When the tilt angle of LED wafer is 0, inert gas plasma can be increased by way of being passed through inert gas
Mutual collision probability between body and depositing metal atoms, makes the depositing homogeneous in all directions as far as possible, obtains in homogeneous thickness
Side metal cladding.In addition, but LED wafer tilt angle be greater than 0 when, inert gas can also be passed through.
Specifically, being passed through the inert gas that flow is 10-20sccm, wherein the inert gas is nitrogen and/or argon
Gas.
This method, by inert gas, can not only serve as protective gas when side-wall metallic reflecting layer is deposited, can be with
Make each surface side metal cladding deposition more evenly by the mutual collision between gaseous plasma and depositing metal atoms, it is heavy to improve
Product effect.If the inert gas flow being passed through is lower than 10sccm, between inert gas plasma and depositing metal atoms
Mutual collision frequency is low, may cause that each face deposition thickness is uneven, deposition rate is slow；If the inert gas flow being passed through is excessively high
In 20sccm, then the mutual collision frequency between inert gas plasma and depositing metal atoms is excessively frequent, also results in
Deposition thickness is uneven, can also damage core particles surface, causes voltage etc. abnormal.
Photoresist exposure mask and metal on S106, removing substrate；
Specifically, carrying out tearing golden processing to core particles using the blue film of high-adhesiveness, the upper gold on photoresist exposure mask is torn
Belong to, then core particles is impregnated in developer solution or are placed in the kish and light gone in glue on removal substrate under certain temperature
Photoresist exposure mask.
Above disclosed is only a preferred embodiment of the present invention, cannot limit the power of the present invention with this certainly
Sharp range, therefore equivalent changes made in accordance with the claims of the present invention, are still within the scope of the present invention.
Claims (10)
1. flip LED chips are plated in a kind of high brightness side, which is characterized in that including substrate, light emitting structure, Cutting Road, the first hole,
Second hole, the first metal supporting layer, the second metal supporting layer, first electrode, second electrode, the first insulating layer, the second insulation
Layer and side metal cladding, the light emitting structure includes the first semiconductor layer, active layer, the second semiconductor being sequentially arranged on substrate
Layer, transparency conducting layer and metallic reflector, the Cutting Road are located at the edge of light emitting structure, and first hole is from metallic reflection
Layer is etched to the first semiconductor layer, and second hole is etched to the surface of the second semiconductor layer from metallic reflector, and described the
One insulating layer is covered on surface and the side wall of light emitting structure, and extends to the side wall of the first hole and the second hole, and described first
Metal supporting layer is filled in the surface in the first hole and extending to the first insulating layer, and second metal supporting layer is filled in the
Two holes are interior and extend to the surface of the first insulating layer, the first metal supporting layer and the second metal supporting layer mutually insulated, described
Second insulating layer is covered on the first metal supporting layer, the second metal supporting layer, the surface of the first insulating layer and side wall, the second insulation
Layer side surface flushed with the side surface of substrate, the first electrode is connect with the first metal supporting layer, the second electrode and
The connection of second metal supporting layer, the side metal cladding are covered on the side wall of substrate and second insulating layer.
2. flip LED chips are plated in high brightness side as described in claim 1, which is characterized in that the side metal cladding by Ag and/
Or Al is made, the side metal cladding with a thickness of 4000-18000 angstroms.
3. a kind of production method of high brightness side plating flip LED chips characterized by comprising
LED wafer is provided, the LED wafer includes substrate and multiple luminous micro-structures on substrate；
The substrate of LED wafer is cut by laser, is formed without cutting crack；
LED wafer after cutting is placed on film, and yellow light processing is carried out to the LED wafer after cutting, forms photoresist
Exposure mask；
Sliver is carried out to yellow light treated LED wafer, expands film, forms more core particles, and core particles are overturn to resistant to high temperature thin
On film, so that the substrate of core particles is upward；
One layer of side metal cladding is formed in the side wall deposition of core particles；
Remove the photoresist exposure mask and metal on substrate.
4. the production method of plating flip LED chips in high brightness side as claimed in claim 3, which is characterized in that it is gold-plated to form side
The method for belonging to layer includes: that LED wafer is tilted 0-30 °, and the side wall deposition using vapour deposition method in core particles forms one layer of side plating metal
Layer.
5. the production method of plating flip LED chips in high brightness side as claimed in claim 4, which is characterized in that being passed through flow is
The inert gas of 10-20sccm, wherein the noble gas body is nitrogen and/or argon gas.
6. the production method of plating flip LED chips in high brightness side as claimed in claim 3, which is characterized in that thin after expanding film
Membrane area is 1.3-1.8 times of original film size.
7. the production method of plating flip LED chips in high brightness side as claimed in claim 3, which is characterized in that at the yellow light
Reason the following steps are included:
Photoresist is coated on the substrate of LED wafer, forms photoresist exposure mask；
LED wafer is dried；
LED wafer after drying is exposed.
8. the production method of plating flip LED chips in high brightness side as claimed in claim 3, which is characterized in that the LED wafer
Production method the following steps are included:
Be formed on the substrate light emitting structure, the light emitting structure include the first semiconductor layer being sequentially arranged on substrate, active layer,
Second semiconductor layer, transparency conducting layer and metallic reflector；
Light emitting structure is performed etching, Cutting Road, the first hole and the second hole are formed；
The first insulating layer is formed, first insulating layer is covered on surface and the side wall of light emitting structure, and extends to the first hole
With the side wall of the second hole；
The first metal supporting layer and the second metal supporting layer are formed, first metal supporting layer is filled in the first hole and prolongs
The surface of the first insulating layer is extended to, second metal supporting layer is filled in the second hole and extends to the table of the first insulating layer
Face, the first metal supporting layer and the second metal supporting layer mutually insulated；
Second insulating layer is formed, the second insulating layer is covered on the first metal supporting layer, the second metal supporting layer, the first insulation
The surface of layer and side wall；
It forms first electrode and second electrode, the first electrode to connect with the first metal supporting layer, the second electrode and the
The connection of two metal supporting layers.
9. the production method of plating flip LED chips in high brightness side as claimed in claim 8, which is characterized in that second insulating layer
Side flushed with the side of substrate.
10. the production method of plating flip LED chips in high brightness side as claimed in claim 3, which is characterized in that the side is gold-plated
Belong to layer be made of Ag and/or Al, the side metal cladding with a thickness of 4000-18000 angstroms.
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| CN110556456A (en) * | 2019-09-30 | 2019-12-10 | 湘能华磊光电股份有限公司 | High-brightness LED chip and cutting method thereof |
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