CN102142499A - LED (light emitting diode) wafer with evenly distributed current - Google Patents
LED (light emitting diode) wafer with evenly distributed current Download PDFInfo
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- CN102142499A CN102142499A CN 201110041208 CN201110041208A CN102142499A CN 102142499 A CN102142499 A CN 102142499A CN 201110041208 CN201110041208 CN 201110041208 CN 201110041208 A CN201110041208 A CN 201110041208A CN 102142499 A CN102142499 A CN 102142499A
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Abstract
The invention discloses an LED (light emitting diode) wafer with evenly distributed current, comprising an N-type semiconductor layer, a luminescent layer, a P-type semiconductor layer, negative electrodes and positive electrodes, wherein the luminescent layer is formed on the N-type semiconductor layer; the P-type semiconductor layer is formed on the luminescent layer; the surface of the P-type semiconductor layer is provided with grooves communicated with the N-type semiconductor layer; the negative electrodes are formed on the grooves; and the positive electrodes are formed on the P-type semiconductor layer. The LED wafer is characterized in that the grooves are one pair of symmetrical E-shaped grooves; the symmetrical E-shaped grooves are distributed on the N-type semiconductor layer; the negative electrodes are formed on the grooves to correspondingly form symmetrical E-shaped negative electrodes; and the positive electrodes surround the symmetrical E-shaped negative electrodes. The LED wafer has the advantages of even heat dissipation, high light emission efficiency, long service life and the like.
Description
[technical field]
The present invention relates to a kind of LED wafer, especially relate to the equally distributed LED wafer of a kind of electric current.
[background technology]
Light-emitting diode is to being positioned at the active layer injection current at P-N knot place, and is luminous by the radiation recombination in electronics and hole.Radiative wavelength is decided by the energy gap of active area materials.Aspect propagation, one of its key property is: semiconductor light-emitting-diode is luminous, and to belong to spontaneous radiation luminous, and the probability that the light that sends is propagated to the space all directions equates.Two of its key property is: the refractive index ratio of semi-conducting material is bigger, and the light that is sent all is to go out to inject optically thinner medium (air) by optically denser medium (as GaN), certainly exists the total reflection phenomenon of light like this, has limited the output of light.For blue wave band (450-480nm), refractive index is n=2.5 as the GaN material.The present GaN based light-emitting diode that generally adopts, the angle of emergence of its six faces can be calculated in view of the above, and the angle of total reflection of light is 23.6 degree, and light extraction efficiency is approximately 4%.Particularly for power-type LED, wafer size expands 1 * 1mm to by 0.3 original * 0.3mm, even to more large scale development, thereby make light extraction efficiency lower.The power-type chip architecture that generally uses is mainly the finger-inserting type structure, as shown in Figure 5 at present.Because its electrode is staggered structure, if deviation is arranged slightly when making, make its cross structure evenly will cause the electric current diffusion insufficient inadequately, cause non-uniform light, and lighting area is little, there is angle of total reflection restriction, light extraction efficiency is low.
[summary of the invention]
The technical problem to be solved in the present invention provides the equally distributed LED wafer of a kind of electric current, this structure have heat radiation evenly, the advantage of high, the long service life of light extraction efficiency.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: the equally distributed LED wafer of a kind of electric current, comprise n type semiconductor layer, and be formed at the luminescent layer on the n type semiconductor layer; Be formed at the p type semiconductor layer on the luminescent layer; Described P type semiconductor laminar surface is provided with the groove that is communicated with n type semiconductor layer; The positive electrode that is formed at the negative electrode of described groove and is formed at p type semiconductor layer; It is characterized in that: described groove is " E " shape groove of a symmetry, " E " shape groove of described symmetry is covered with on the described n type semiconductor layer, described negative electrode is arranged on described symmetry " E " the shape groove corresponding " E " shape negative electrode that forms symmetry, described positive electrode be looped around described symmetry " E " shape negative electrode around.
The present invention's beneficial effect compared with prior art is: because groove of the present invention is arranged to a symmetry " E " type groove, " E " type groove of described symmetry is covered with on the n type semiconductor layer, negative electrode is formed at also corresponding " E " shape negative electrode that forms symmetry on symmetrical " E " shape groove, and positive electrode is looped around being provided with of symmetrical " E " shape negative electrode on every side.It is even that the electric current diffusion that can make the LED wafer is set like this, improves LED wafer light extraction efficiency greatly, prolongs the useful life of LED wafer.
Preferably, the pattern line of described positive electrode formation to the pattern line spacing distance of negative electrode formation equates.The electric current diffusion that the positive electrode that can make the LED wafer and negative electrode are set like this is more even, improves the light extraction efficiency of LED wafer, also makes the radiating efficiency of LED wafer better simultaneously, prolongs the useful life of LED wafer greatly.
Preferably, also be provided with one deck substrate in the bottom of described n type semiconductor layer, this structure can improve the radiating efficiency of LED wafer, prolongs the useful life of LED wafer.
Preferably, also be provided with one deck resilient coating between described substrate and the n type semiconductor layer, this structure can make between n type semiconductor layer and the substrate associativity compacter, reduces lattice mismatch degree between the two, makes the n type semiconductor layer growth quality better.
Preferably, be formed with the layer of transparent conductive layer on the surface of described p type semiconductor layer, described positive electrode is arranged on the transparency conducting layer, this structure can reduce optical loss, electric current is diffused in the whole LED wafer surface, makes the electric current diffusion profile even, improves the light extraction efficiency of LED wafer greatly.
[description of drawings]
Below in conjunction with accompanying drawing the present invention is described in further detail.
Fig. 1 is the cross-sectional view of first kind of embodiment of the present invention.
Fig. 2 is the cross-sectional view of second kind of embodiment of the present invention.
Fig. 3 is the floor map of first kind of embodiment of the present invention shown in Figure 1.
Fig. 4 is the floor map of first kind of embodiment of the present invention shown in Figure 2.
Fig. 5 is the finger-inserting type electrode structure schematic diagram of existing LED wafer.
Description of symbols: 1, substrate; 2, N type layer; 21, groove; 3, luminescent layer; 4, P type layer; 6, transparency conducting layer; 7, positive electrode; 71, positive electrode wire welding area; 8, negative electrode; 81, negative electrode wire welding area; 9, resilient coating; 10, LED wafer.
[embodiment]
Shown in accompanying drawing 1,2,3,4, the present invention includes n type semiconductor layer 2, be formed at the luminescent layer 3 on the n type semiconductor layer 2; Be formed at the p type semiconductor layer 4 on the luminescent layer 3; P type semiconductor layer 4 surfaces are provided with " E " shape groove 21 of the symmetry that is communicated with n type semiconductor layer 2; Be formed at the negative electrode 8 of " E " shape groove 21 of described symmetry and the positive electrode 7 that is formed at p type semiconductor layer 4; " E " shape groove 21 of symmetry is covered with on the n type semiconductor layer 2, negative electrode 8 is arranged on corresponding " E " shape negative electrode 8 that forms symmetry on symmetrical " E " shape groove 21, positive electrode 7 be looped around the symmetry " E " shape negative electrode 8 around, pass through pattern exposure process, local evaporation layer of metal forms positive electrode wire welding area 71 on positive electrode 7, and local evaporation layer of metal forms negative electrode wire welding area 81 on negative electrode 8; Described negative electrode wire welding area 81 is separately positioned on the end of the middle part line of described symmetry " E " shape negative electrode 8, and two negative electrode wire welding areas 81 are symmetricly set on the described n type semiconductor layer 2.Described positive electrode wire welding area 71 is arranged on the top of symmetry " E " type negative electrode 8, the infall of positive electrode 7, described positive electrode wire welding area 71 has been arranged side by side two, and two positive electrode wire welding areas that are arranged side by side 71 are the isoceles triangle shape with symmetrically arranged two negative electrode wire welding areas 81 and are fixed on the described LED wafer 10.It is even that the electric current diffusion that can make between the electrode is set like this, improves the light extraction efficiency of LED wafer 10, reduces luminous energy and be converted into heat energy, prolongs the useful life of LED wafer 10." E " shape groove 21 of above-mentioned symmetry had both cut off LED wafer 10 internal light total reflection paths, part light can send from " E " shape groove 21 of symmetry, be unlikely to make light to be absorbed and be converted into heat in LED wafer 10 inside, enlarge the area of dissipation of wafer, improved the useful life of LED wafer 10.The pattern line that described positive electrode 7 forms to the pattern line spacing distance that negative electrode 8 forms equates.The electric current diffusion that the positive electrode that can make LED wafer 10 and negative electrode are set like this is more even, improves the light extraction efficiency of LED wafer 10, also makes the radiating efficiency of LED wafer 10 better simultaneously, prolongs the useful life of LED wafer 10 greatly.Bottom at described n type semiconductor layer 2 also is provided with one deck substrate 1, also be provided with one deck resilient coating 9 between described substrate 1 and the n type semiconductor layer 2, this structure can make between n type semiconductor layer 2 and the substrate 1 associativity compacter, reduce lattice mismatch degree between the two, make the n type semiconductor layer growth quality better, also can improve simultaneously the radiating efficiency of LED wafer 10, prolong the useful life of LED wafer 10, above-mentioned substrate 1 can be Sapphire Substrate or silicon carbide substrates.Be formed with layer of transparent conductive layer 6 on the surface of described p type semiconductor layer 4, described positive electrode 7 is arranged on the transparency conducting layer 6, and this structure can reduce optical loss, and electric current is diffused in the whole LED wafer surface, make the electric current diffusion profile even, improve the light extraction efficiency of LED wafer greatly.
Owing to groove of the present invention is arranged to " E " type groove 21 of a symmetry, " E " type groove 21 of described symmetry is covered with on the n type semiconductor layer 2, negative electrode 8 is formed at also corresponding " E " shape negative electrode 8 that forms symmetry on symmetrical " E " shape groove 21, and positive electrode 7 is looped around being provided with of symmetrical " E " shape negative electrode 8 on every side.It is even that the electric current diffusion that can make LED wafer 10 is set like this, improve LED wafer 10 light extraction efficiencies greatly, prolong the useful life of LED wafer 10, easier each corner, edge that is diffused into LED wafer 10 of electric current, more uniform diffusion if the inhomogeneous meeting of current delivery makes forward voltage higher, is easy to simultaneously cause partial breakdown and makes component failure, structure of the present invention both can reduce voltage, improved the life-span that light extraction efficiency has increased LED wafer 10 again.The CURRENT DISTRIBUTION difference that the electrode shape difference will cause is also responsive more.The inhomogeneous meeting of CURRENT DISTRIBUTION makes that local current is excessive and causes local electric leakage, to constituting a latent danger device lifetime.
The above is all so that the present invention conveniently to be described, in the spiritual category that does not break away from the present invention's creation, the various simple covert and modification that those skilled in the art did of being familiar with this technology still belongs to protection scope of the present invention.
Claims (5)
1. equally distributed LED wafer of electric current, comprise n type semiconductor layer, be formed at the luminescent layer on the n type semiconductor layer, be formed at the p type semiconductor layer on the luminescent layer, described P type semiconductor laminar surface is provided with the groove that is communicated with n type semiconductor layer, the positive electrode that is formed at the negative electrode of described groove and is formed at p type semiconductor layer, it is characterized in that: described groove is " E " shape groove of a symmetry, " E " shape groove of described symmetry is covered with on the described n type semiconductor layer, described negative electrode is arranged on described symmetry " E " the shape groove corresponding " E " shape negative electrode that forms symmetry, described positive electrode be looped around described symmetry " E " shape negative electrode around.
2. according to the equally distributed LED wafer of the described electric current of claim 1, it is characterized in that: the pattern line spacing distance that the pattern line that described positive electrode forms to negative electrode forms equates.
3. according to claim 1 or the equally distributed LED wafer of 2 described electric currents, it is characterized in that: the bottom at described n type semiconductor layer also is provided with one deck substrate.
4. according to the equally distributed LED wafer of the described electric current of claim 3, it is characterized in that: also be provided with one deck resilient coating between described substrate and the n type semiconductor layer.
5. according to the equally distributed LED wafer of the described electric current of claim 4, it is characterized in that: be formed with the layer of transparent conductive layer on the surface of described p type semiconductor layer, described positive electrode is arranged on the described transparency conducting layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110041208 CN102142499A (en) | 2011-01-27 | 2011-01-27 | LED (light emitting diode) wafer with evenly distributed current |
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| CN 201110041208 CN102142499A (en) | 2011-01-27 | 2011-01-27 | LED (light emitting diode) wafer with evenly distributed current |
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| CN102142499A true CN102142499A (en) | 2011-08-03 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296166A (en) * | 2012-02-24 | 2013-09-11 | 新世纪光电股份有限公司 | Light emitting diode assembly and flip chip type light emitting diode packaging assembly |
| CN103715321A (en) * | 2013-12-13 | 2014-04-09 | 浙江亿米光电科技有限公司 | Fan-shaped LED chip and manufacturing method thereof |
| CN105449069A (en) * | 2014-08-26 | 2016-03-30 | 广东量晶光电科技有限公司 | Flip LED chip structure and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335315A (en) * | 2007-06-26 | 2008-12-31 | 普瑞光电股份有限公司 | Light-emitting component having improved electrode construction |
| CN201985157U (en) * | 2011-01-27 | 2011-09-21 | 广东银雨芯片半导体有限公司 | Light-emitting diode (LED) wafer with uniform current distribution |
-
2011
- 2011-01-27 CN CN 201110041208 patent/CN102142499A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335315A (en) * | 2007-06-26 | 2008-12-31 | 普瑞光电股份有限公司 | Light-emitting component having improved electrode construction |
| CN201985157U (en) * | 2011-01-27 | 2011-09-21 | 广东银雨芯片半导体有限公司 | Light-emitting diode (LED) wafer with uniform current distribution |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296166A (en) * | 2012-02-24 | 2013-09-11 | 新世纪光电股份有限公司 | Light emitting diode assembly and flip chip type light emitting diode packaging assembly |
| CN103296166B (en) * | 2012-02-24 | 2016-03-02 | 新世纪光电股份有限公司 | Light emitting diode assembly and flip chip type light emitting diode packaging assembly |
| CN105742436A (en) * | 2012-02-24 | 2016-07-06 | 新世纪光电股份有限公司 | Light emitting diode assembly and flip chip type light emitting diode packaging assembly |
| CN103715321A (en) * | 2013-12-13 | 2014-04-09 | 浙江亿米光电科技有限公司 | Fan-shaped LED chip and manufacturing method thereof |
| CN103715321B (en) * | 2013-12-13 | 2017-01-04 | 浙江亿米光电科技有限公司 | The LED chip of a kind of sector structure and manufacture method thereof |
| CN105449069A (en) * | 2014-08-26 | 2016-03-30 | 广东量晶光电科技有限公司 | Flip LED chip structure and manufacturing method thereof |
| CN105449069B (en) * | 2014-08-26 | 2018-06-29 | 广东量晶光电科技有限公司 | A kind of flip LED chips structure and its manufacturing method |
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Application publication date: 20110803 |