CN105449069B - A kind of flip LED chips structure and its manufacturing method - Google Patents
A kind of flip LED chips structure and its manufacturing method Download PDFInfo
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- CN105449069B CN105449069B CN201410425677.XA CN201410425677A CN105449069B CN 105449069 B CN105449069 B CN 105449069B CN 201410425677 A CN201410425677 A CN 201410425677A CN 105449069 B CN105449069 B CN 105449069B
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Abstract
The application provides a kind of flip LED chips structure and preparation method thereof, and wherein this method includes：Step 1, substrate, buffer layer, N-type layer, luminescent layer and p-type ohmic contact layer are sequentially arranged；Step 2, chip isolated area is formed by etching；Step 3, N-type electrode is symmetrically respectively formed in chip both sides of the edge and forms area；Step 4, diffusive reflective layer is formed on p-type ohmic contact layer, dielectric film layer is formed on isolated area, N-type electrode formation area, diffusion emitter floor；Step 5, the window region that N electrode, P electrode are formed to the dielectric film layer on N-type electrode Xing Cheng areas, diffusive reflective layer, and ridge separation shape is formed to dielectric film layer；Step 6, making form P-type electrode and N-type electrode, are welded on pcb board.
Description
Technical field
The present invention relates to LED light component technology, more particularly, to a kind of flip LED chips structure and manufacturer
Method.
Background technology
Currently, the substrate of LED chip is substantially using materials such as Al2O3, SiC, Si, GaN.Al2O3 due to cheap,
And Lattice Matching is well widely used between epitaxial layer.In general, in conventional LED encapsulation process, all sapphire
Substrate Bonding is on pcb board.But since Sapphire Substrate is a kind of insulating materials in itself, heat conductivility is poor, but due to
Heat dissipation be influence LED chip reliability key factor, so using Sapphire Substrate positive cartridge chip usually all cannot compared with
It is used under high operating current.
For improvement with sapphire do substrate formal dress chip cooling it is bad the problem of, people devise a kind of new LED core
Chip architecture, i.e. flip chip structure.After the inverted design of chip is proposed, people have carried out its feasibility largely
Research and exploration.Fig. 1 is the schematic diagram of the flip LED chips structure of the prior art, in Fig. 1, including substrate 1, N-type layer 2, p-type
Layer 3, diffusive reflective layer 4, N Pad 5, P Pad 6, N Bonding layers 7, P Bonding layers 8, Bonding substrates 9 and substrate
10。
Due to the limitation of LED chip design, encapsulation yield is very low always, traces it to its cause as follows：Firstth, N-type electrode area
Domain is comparatively small (if that does is too big, can influence light efficiency when losing luminous zone), it is difficult to which the opposed area with PCB is right well
Position；Secondth, P electrode position is more much higher than N electrode, it is easy to cause rosin joint, desoldering situation；Third is to make N electrode, often
Remove a big chunk active area, greatly reduce the area of active area electron/hole-recombination and luminous zone, direct shadow in this way
The luminous efficiency of LED is rung；4th, since N Pad and P Pad are separated by relatively near, when welding, is easily formed due to the flowing of solder
Short circuit phenomenon, and then generate electric leakage；5th, since every chips are isolated via wafer cutting, and cutting can expose
Go out n-quadrant, the solder in welding at P generates electric leakage risk since flowing can contact the n-quadrant exposed, influences to seal
Fill yield；6th, most of N electrode area is located at the somewhere region of entire chip, and current spread is uneven, influences to radiate and shine
Efficiency.
Invention content
In order to solve drawbacks described above of the prior art, the present invention propose a kind of new flip LED chips structure and its
Manufacturing method.
According to an aspect of the present invention, it proposes a kind of production method of flip LED chips structure, including：
Step 1, substrate, buffer layer, N-type layer, luminescent layer and p-type ohmic contact layer are sequentially arranged；
Step 2, chip isolated area is formed by etching；
Step 3, N-type electrode is symmetrically respectively formed in chip both sides of the edge and forms area；
Step 4, diffusive reflective layer is formed on p-type ohmic contact layer, area, diffusion hair is formed in isolated area, N-type electrode
Penetrate formation dielectric film layer on layer；
Step 5, the window that N electrode, P electrode are formed to the dielectric film layer on N-type electrode Xing Cheng areas, diffusive reflective layer
Mouth region, and ridge separation shape is formed to dielectric film layer；
Step 6, making form P-type electrode and N-type electrode, are welded on pcb board.
According to another aspect of the invention, it is proposed that a kind of flip LED chips structure, including：
Substrate, buffer layer, N-type layer, luminescent layer and the p-type ohmic contact layer of sequence arrangement；
Chip isolated area positioned at chip one end, positioned at chip both sides of the edge, symmetrical two N-type electrodes form area；
Diffusive reflective layer on p-type ohmic contact layer；
Dielectric film layer on chip isolated area, N-type electrode formation area, diffusion emitter floor；
The N electrode that is formed in dielectric film layer on N-type electrode Xing Cheng areas, diffusive reflective layer, the window of P electrode
Area；
Wherein, dielectric film layer forms ridge separation shape, detaches N-type electrode and P-type electrode region；
Respectively N electrode, P electrode window region on form N-type electrode and P-type electrode.
Flip chip structure designed by the present invention has the advantages that compared with traditional flip chip structure：
In the present invention, due to the N-type electrode and P-type electrode of chip being arranged on sustained height and area has substantially taken up whole chips
Area avoids the generation of rosin joint solder skip situation present in encapsulation, improves encapsulation yield；In the present invention, the big portion of N-type electrode
Divide and dielectric film layer, diffusive reflective layer form sandwich structure, it is significant portion of without etching away on the two
N-type forms area and luminous zone, increases light-emitting area, improves whole chips efficiency；In the present invention, due to by forming chip
Isolated area exposes N-type and forms area in advance, and has been effective guarantor using the N-type formation area of dielectric film layer offside wall
Shield, therefore the generation leaked electricity in encapsulation process is avoided, improve encapsulation yield；In the present invention, dielectric film layer is done
The design of ridge separation, avoids the short circuit in encapsulation process caused by the flowing of scolding tin between N-type electrode and P-type electrode and asks
Topic, improves encapsulation yield；In the present invention, N-type electrode forms area and is symmetrical arranged by being arranged to, and further improves electric current
Diffusion uniformity.
Description of the drawings
Fig. 1 is the schematic diagram of flip LED chips structure of the prior art；
Fig. 2 is the front view of flip LED chips structure according to the present invention；
Fig. 3 is the vertical view of flip LED chips structure according to the present invention.
In order to clearly realize the structure of the embodiment of the present invention, certain size, structure and device are labelled in figure,
But signal needs are only for, are not intended to limit the invention in the specific dimensions, structure, device and environment, according to specific
Need, these devices and environment can be adjusted or changed by those of ordinary skill in the art, the adjustment that is carried out or
Person's modification is still included in the range of appended claims.
Specific embodiment
In the following with reference to the drawings and specific embodiments to a kind of flip LED chips structure provided by the invention and its manufacturing method
It is described in detail.
In the following description, the multiple and different aspects that the present invention will be described, however, for common skill in the art
For art personnel, the present invention can be implemented just with some or all structures or flow of the present invention.In order to explain
Definition for, specific number, configuration and sequence are elaborated, however, it will be apparent that in the situation without these specific details
Under can also implement the present invention.It in other cases, will no longer for some well-known features in order not to obscure the present invention
It is described in detail.
To solve the above problems, the present invention proposes a kind of production method of flip LED chips structure, wherein, this method
Including：Step 1, substrate, buffer layer, N-type layer, luminescent layer and p-type ohmic contact layer are sequentially arranged；Step 2, it is formed by etching
Chip isolated area 01；Step 3, N-type electrode is symmetrically respectively formed in chip both sides of the edge and forms area 02；Step 4, in p-type ohm
Diffusive reflective layer 03 is formed on contact layer, dielectric is formed on isolated area, N-type electrode formation area, diffusion emitter floor
Film layer 04, it is desirable that dispersive medium film layer can adequately protect to isolated area；Step 5, to N-type electrode Xing Cheng areas, diffusive reflective layer it
On dielectric film layer formed N electrode, P electrode window region 05/06, and to dielectric film layer formed ridge separation shape
07；Step 6, making form P-type electrode 08 and N-type electrode 09；Step 7, P-type electrode and N-type electrode are welded by way of soldering
It is connected on pcb board.
Wherein, in step 2, chip isolated area 01 is formed by etching, it is desirable that isolated area depth at least extends to substrate layer；
Wherein, in step 3, N-type electrode forms the both sides of the edge that area 02 is located at chip, symmetrical, is set in chip both sides
A rectangle concave domain is counted, which can be arranged in chip both sides by ectocentral position.
Wherein, in step 6, P-type electrode is located on dielectric film layer, and intermediate portion passes through dielectric film layer window
Mouth is connected with diffusive reflective layer.
Wherein, in step 6, N-type electrode part, dielectric film layer, diffusive reflective layer form sandwich structure, and under it
End extends to dielectric film layer window region by dielectric film layer and is connected with N-type layer, and the upper end is located at dielectric film layer
On, and the N-type electrode of the upper end and P-type electrode are in sustained height or are similar to sustained height.
In the second embodiment of the application, it is proposed that a kind of flip LED chips structure, wherein, which includes：Sequentially
Substrate, buffer layer, N-type layer, luminescent layer and the p-type ohmic contact layer of arrangement；Chip isolated area 01 positioned at chip one end；It is located at
Symmetrical two N-type electrodes in chip both sides of the edge form area 02；Diffusive reflective layer 03 on p-type ohmic contact layer；Position
Dielectric film layer 04 on chip isolated area, N-type electrode formation area, diffusion emitter floor；N-type electrode Xing Cheng areas, diffusion
The N electrode that is formed in dielectric film layer on reflecting layer, the window region 05/06 of P electrode, wherein, dielectric film layer shape
Shape 07 is detached into ridge；Respectively N electrode, P electrode window region on form N-type electrode 09 and P-type electrode 08.Wherein, it is right
Dielectric film layer has done the design of ridge separation, avoids in encapsulation process N-type electrode and p-type caused by the flowing of scolding tin
Short circuit problem between electrode improves encapsulation yield.
Wherein, 01 depth of chip isolated area at least extends to substrate layer.Wherein, dispersive medium film layer fills chip isolated area
Code insurance protects.Wherein, due to exposing N-type formation area in advance, and utilize dielectric film layer pair by forming chip isolated area
The N-type of side wall forms area and is effectively protected, therefore avoid the generation leaked electricity in encapsulation process, improves encapsulation yield.
Wherein, N-type electrode forms the both sides of the edge that area 02 is located at chip, symmetrical, and a square is designed in chip both sides
Shape concave domain, the region can be arranged in chip both sides by ectocentral position.Wherein, N-type electrode forms area and passes through setting
Into being symmetrical arranged, current spread uniformity is further improved.
Wherein, P-type electrode is located on dielectric film layer, and intermediate portion passes through dielectric film layer window and diffusion
Reflecting layer is connected.
Wherein, N-type electrode part, dielectric film layer, diffusive reflective layer formation sandwich structure, and its lower end pass through exhausted
Edge media coating extends to dielectric film layer window region and is connected with N-type layer, and the upper end is located on dielectric film layer, and its
The N-type electrode and P-type electrode of upper end are in sustained height or are similar to sustained height.Wherein, due to the N-type electrode of chip and
P-type electrode is arranged on sustained height and area has substantially taken up whole chips area, avoids the leakage of rosin joint present in encapsulation
The generation of situation is welded, improves encapsulation yield.Wherein, N-type electrode is most of and dielectric film layer, diffusive reflective layer form
Sandwich structure on the two, forms area and luminous zone without etching away significant portion of N-type, increases light-emitting area,
Improve whole chips efficiency.
Finally it should be noted that above example is only describing technical scheme of the present invention rather than to this technology method
It is limited, the present invention can above extend to other modifications, variation, application and embodiment, and therefore, it is considered that institute in application
There are such modification, variation, application, embodiment all in the range of the spirit or teaching of the present invention.
Claims (11)
1. a kind of production method of flip LED chips structure, including：
Step 1, substrate, buffer layer, N-type layer, luminescent layer and p-type ohmic contact layer are sequentially arranged；
Step 2, chip isolated area is formed by etching；
Step 3, N-type electrode is symmetrically respectively formed in chip both sides of the edge and forms area；
Step 4, diffusive reflective layer is formed on p-type ohmic contact layer, area, diffusion emitter floor is formed in isolated area, N-type electrode
On formed dielectric film layer；
Step 5, the window that N electrode, P electrode are formed to the dielectric film layer on N-type electrode Xing Cheng areas, diffusive reflective layer
Area, and ridge separation shape is formed to dielectric film layer；
Step 6, making form P-type electrode and N-type electrode, are welded on pcb board.
2. according to the method described in claim 1, wherein, in step 2, the depth that chip isolated area is formed by etching is at least prolonged
Reach substrate layer.
3. according to the method described in claim 1, wherein, in step 3, N-type electrode formation area is located at the both sides of the edge of chip
Rectangle concave domain, it is symmetrical；Wherein, which is arranged in chip both sides by ectocentral position.
4. according to the method described in claim 1, wherein, in step 6, P-type electrode is located on dielectric film layer, among it
Dielectric film layer window is partially passed through with diffusive reflective layer to be connected.
5. according to the method described in claim 1, wherein, in step 6, N-type electrode part, dielectric film layer, scattered reflection
Layer forms sandwich structure, and its lower end extends to dielectric film layer window region by dielectric film layer and is connected with N-type layer,
The upper end is located on dielectric film layer, and the N-type electrode of the upper end and P-type electrode are in sustained height.
6. a kind of flip LED chips structure, including：
Substrate, buffer layer, N-type layer, luminescent layer and the p-type ohmic contact layer of sequence arrangement；
Chip isolated area positioned at chip one end, positioned at chip both sides of the edge, symmetrical two N-type electrodes form area；
Diffusive reflective layer on p-type ohmic contact layer；
Dielectric film layer on chip isolated area, N-type electrode formation area, diffusion emitter floor；
The N electrode that is formed in dielectric film layer on N-type electrode Xing Cheng areas, diffusive reflective layer, the window region of P electrode；
Wherein, dielectric film layer forms ridge separation shape, detaches N-type electrode and P-type electrode region；
Respectively N electrode, P electrode window region on form N-type electrode and P-type electrode.
7. LED chip structure according to claim 6, wherein, chip isolated area depth at least extends to substrate layer.
8. LED chip structure according to claim 6, wherein, dispersive medium film layer adequately protects to chip isolated area；Its
In, N-type electrode forms the rectangle concave domain that area is located at the both sides of the edge of chip, symmetrical；Alternatively, N-type electrode forms area
Chip both sides are arranged in by ectocentral position.
9. LED chip structure according to claim 6, wherein, P-type electrode is located on dielectric film layer, among it
Dielectric film layer window is partially passed through with diffusive reflective layer to be connected.
10. LED chip structure according to claim 6, wherein, N-type electrode part, dielectric film layer, scattered reflection
Layer forms sandwich structure, and its lower end extends to dielectric film layer window region by dielectric film layer and is connected with N-type layer,
The upper end is located on dielectric film layer, and the N-type electrode of the upper end and P-type electrode are in sustained height.
11. LED chip structure according to claim 10, wherein, the N-type electrode and P-type electrode of chip are arranged on same
Highly, and the two area occupies whole chips area.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410425677.XA CN105449069B (en) | 2014-08-26 | 2014-08-26 | A kind of flip LED chips structure and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410425677.XA CN105449069B (en) | 2014-08-26 | 2014-08-26 | A kind of flip LED chips structure and its manufacturing method |
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| CN105449069A CN105449069A (en) | 2016-03-30 |
| CN105449069B true CN105449069B (en) | 2018-06-29 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102142499A (en) * | 2011-01-27 | 2011-08-03 | 广东银雨芯片半导体有限公司 | LED (light emitting diode) wafer with evenly distributed current |
| CN102403425A (en) * | 2011-11-25 | 2012-04-04 | 俞国宏 | Method for manufacturing inverted LED chip |
| CN103236474A (en) * | 2013-04-09 | 2013-08-07 | 中国科学院半导体研究所 | Method for manufacturing optionally cut high-voltage LED devices |
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| JP3716622B2 (en) * | 1998-06-19 | 2005-11-16 | ソニー株式会社 | Semiconductor laser |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142499A (en) * | 2011-01-27 | 2011-08-03 | 广东银雨芯片半导体有限公司 | LED (light emitting diode) wafer with evenly distributed current |
| CN102403425A (en) * | 2011-11-25 | 2012-04-04 | 俞国宏 | Method for manufacturing inverted LED chip |
| CN103236474A (en) * | 2013-04-09 | 2013-08-07 | 中国科学院半导体研究所 | Method for manufacturing optionally cut high-voltage LED devices |
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Effective date of registration: 20221026 Address after: Floor 11, Mingzhu Building, Zhaoxin Square, Fujing Garden, No. 11, Pingzhou Nangang Road, Guicheng Street, Nanhai District, Foshan, Guangdong 528251 Patentee after: Guangdong Limited by Share Ltd Group Address before: 528251 Factory buildings on the first and second floors of Building A, Pingzhou Jingu Optoelectronic Community, Nanhai District, Foshan City, Guangdong Province Patentee before: QUANTUM WAFER Inc. |