CN106170874A - Semiconductor light-emitting elements - Google Patents
Semiconductor light-emitting elements Download PDFInfo
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- CN106170874A CN106170874A CN201580000842.XA CN201580000842A CN106170874A CN 106170874 A CN106170874 A CN 106170874A CN 201580000842 A CN201580000842 A CN 201580000842A CN 106170874 A CN106170874 A CN 106170874A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 167
- 230000004888 barrier function Effects 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 116
- 239000000758 substrate Substances 0.000 description 12
- 230000005611 electricity Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to semiconductor light-emitting elements, it is characterised in that including: illuminating part, it possesses: the first semiconductor layer, and it has the first electric conductivity；Second semiconductor layer, it has second electric conductivity different from the first electric conductivity；And active layer, it is between the first semiconductor layer and the second semiconductor layer, utilize electronics and hole in conjunction with and generate light；Insulating barrier, it is formed at the side of illuminating part；And first electrode and the second electrode, this first electrode and the second electrode electrically connect with the first semiconductor layer and the second semiconductor layer respectively, and it is formed at identical direction relative to illuminating part, at least one in this first electrode and the second electrode is located at the opposition side of illuminating part on the basis of insulating barrier, and the insulating barrier side illuminating part between the first electrode and the second electrode is formed with at least one groove.
Description
Technical field
The present invention relates to semiconductor light-emitting elements on the whole, especially, relates to improve partly leading hot durability
Body light-emitting component.
Background technology
Here, provide the background technology about the present invention, these background technologies not necessarily represent known technology.
Fig. 1 is to represent in an example of semiconductor light-emitting elements disclosed in U.S. Register patent gazette the 7,262,436th
Figure, semiconductor light-emitting elements includes: substrate (100), the upper growth of substrate (100) n-type semiconductor layer (300), partly lead at N-shaped
The active layer (400) of the upper growth of body layer (300), the upper growth of active layer (400) p-type semiconductor layer (500), be formed at p-type
Semiconductor layer (500) is upper and act as the electrode (901,902,903) of reflectance coating and is formed at the N-shaped exposed by etching
N side engagement pad (800) on semiconductor layer (300).
The chip of this structure, i.e. electrode (901,902,903) and electrode (800) are both formed in the one of substrate (100)
Side, the chip of the form that electrode (901,902,903) act as reflectance coating is referred to as flip-chip (filp chip).Electrode (901,
902,903) by the electrode (901 that reflectance is high；Such as: Ag), for the electrode (903 of welding；Such as: Au) and be used for preventing electricity
The electrode (902 of the diffusion between pole (901) material and electrode (903) material；Such as: Ni) constitute.Such metallic reflective coating
Structure reflectance is high, possesses advantage, but shortcoming is to cause because of metal light to absorb in terms of current spread.
Fig. 2 is to represent in an example of semiconductor light-emitting elements disclosed in day publication publication the 2006-20913rd
Figure, semiconductor light-emitting elements includes: substrate (100), at the cushion (200) of the upper growth of substrate (100), in cushion (200)
The n-type semiconductor layer (300) of upper growth, at the active layer (400) of the upper growth of n-type semiconductor layer (300), in active layer (400)
The p-type semiconductor layer (500) of upper growth, it is formed in p-type semiconductor layer (500), and possesses the light transmission of current spread function
Conducting film (600), p side engagement pad (700) being formed on light transmitting conductive film (600) and being formed at is exposed by etching
N-type semiconductor layer (300) on n side engagement pad (800).Further, light transmitting conductive film (600) possesses distribution Bradley
Lattice reflecting layer (900；DBR:Distributed Bragg Reflector) and metallic reflective coating (904).According to such knot
Structure, it is possible to reduce the light that causes because of metallic reflective coating (904) and absorb, but with utilize the situation phase of electrode (901,902,903)
Ratio, current spread is the most smooth.
According to many advantages, make semiconductor light-emitting elements with high electric current, high power (high power) luminous
Method.The large area further requirement height electric current of semiconductor light-emitting elements and high power, on the contrary, for high electric current, Gao Gong
Rate drives, and also makes semiconductor light-emitting elements by large area.Even if it addition, first-selection is not that large-scale semiconductor is luminous the most yet
Element, but possess the simplification of power-supply circuit etc. and save the high electric current of advantage of expense, high power driving.But, along with
Such high electric current, high power drive, and improve the problem that radiating efficiency becomes more critical.In flip-chip described above, fall
The electrode of cartridge chip is joined to the metal pattern of Submount by the method for scolding tin etc., and passes through the electrode of flip-chip then
Become main heat sink passage, and if long lasting for situation about can not successfully dispel the heat, then in the property of semiconductor light-emitting elements
Go wrong on energy or durability.
Summary of the invention
Technical task
To this, will describe in the subsequent paragraphs of " specific embodiment ".
Problem solution
Here, provide the overall summary of the present invention, itself and the framework of the non-limiting present invention.
A mode according to the present invention, it is provided that a kind of semiconductor light-emitting elements, it is characterised in that including: illuminating part, its tool
Standby: the first semiconductor layer, it has the first electric conductivity；Second semiconductor layer, it has second different from the first electric conductivity and leads
Electrically；And active layer, it is between the first semiconductor layer and the second semiconductor layer, utilize electronics and hole in conjunction with and give birth to
Cheng Guang；Insulating barrier, it is formed at the side of illuminating part；And first electrode and the second electrode, this first electrode and the second electrode divide
Electrically do not connect with the first semiconductor layer and the second semiconductor layer, and be formed on identical direction relative to illuminating part,
At least one in this first electrode and the second electrode is located at the opposition side of illuminating part on the basis of insulating barrier, the first electrode with
Insulating barrier side illuminating part between second electrode is formed with at least one groove.
Invention effect
To this, will describe in the subsequent paragraphs of " detailed description of the invention ".
Accompanying drawing explanation
Fig. 1 is to represent in an example of semiconductor light-emitting elements disclosed in U.S. Register patent gazette the 7,262,436th
Figure.
Fig. 2 is to represent in an example of semiconductor light-emitting elements disclosed in Japanese Laid-Open Patent Publication the 2006-20913rd.
Fig. 3 is the figure of an example of the semiconductor light-emitting elements for the present invention is described.
Fig. 4 is the figure of an example of the manufacture method of the semiconductor light-emitting elements for the present invention is described.
Fig. 5 is the figure of another example of the semiconductor light-emitting elements for the present invention is described.
Fig. 6 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described.
Fig. 7 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described.
Fig. 8 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described.
Fig. 9 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described.
Figure 10 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described.
Figure 11 is the figure making use-case of the semiconductor light-emitting elements for the present invention is described.
Detailed description of the invention
Below, referring to the drawings, the present invention is described in detail.
Fig. 3 is the figure of an example of the semiconductor light-emitting elements for the present invention is described, semiconductor light-emitting elements includes: luminous
Portion (30,40,50,60), insulating barrier (91), the first electrode (80) and the second electrode (70).Illuminating part (30,40,50,60) includes
Multiple semiconductor layers (30,40,50), multiple semiconductor layers (30,40,50) possess: the first semiconductor layer (30), it has first
Electric conductivity；Second semiconductor layer (50), it has second electric conductivity different from the first electric conductivity；And active layer (40), it is situated between
Between the first semiconductor layer (30) and the second semiconductor layer (50), by electronics and hole in conjunction with and generate light.Insulation
Layer (91) is located at the side of illuminating part (30,40,50,60).First electrode (80) and the second electrode (70) are led with the first half respectively
Body layer (30) and the second semiconductor layer (50) electrically connect, and are located at identical direction relative to illuminating part (30,40,50,60)
On.At least one in first electrode (80) and the second electrode (70) is located at multiple semiconductor layer on the basis of insulating barrier (91)
The opposition side of (30,40,50).Insulating barrier (91) side illuminating part between the first electrode (80) and the second electrode (70) (30,
40,50,60) at least one groove (35) it is formed with.
In the present embodiment, semiconductor light-emitting elements is flip-chip (flip chip), the first electrode (80) and the second electricity
Pole (70) is positioned at the opposition side of multiple semiconductor layer (30,40,50) on the basis of insulating barrier (91), and this semiconductor light-emitting elements has
Standby: the first conductive part (81), its through insulating barrier (91), by the first electrode (80) and the first quasiconductor exposed by etching
Layer (30) electrically connects；Second conductive part (81), its through insulating barrier (91), and electrically connect with the second semiconductor layer (50)
Logical.In order to will be from the luminous reflectance of active layer (40) to substrate (10) side, illuminating part (30,40,50,60) be at multiple semiconductor layers
Possess reflecting layer between (30,40,50) and insulating barrier (91) or reflected light by insulating barrier (91).In the present embodiment, insulation
Layer (91) reflects light as insulating properties reflectance coating.Insulating properties reflectance coating include distributed Bragg reflecting layer (DBR:
Distributed Bragg Reflector)。
At least one groove (35) is formed by removing a part for multiple semiconductor layers (30,40,50) or does not removes
Multiple semiconductor layers (30,40,50), and remove other parts of illuminating part (30,40,50,60) and formed.At the present embodiment
In, forming multiple groove (35), each groove (35) possesses the shape of canal (trench), depression (recess), ditch (groove) etc., groove
(35) not only include not to the situation of the side face directions opening of multiple semiconductor layers (30,40,50), but also include to multiple
The situation of the side face directions opening (open) of semiconductor layer (30,40,50).Being preferably, illuminating part (30,40,50,60) is many
Current spread conducting film (60 is possessed between individual semiconductor layer (30,40,50) and insulating barrier (91)；Such as: ITO, Ni/Au etc.),
Groove (35) is formed by removing current spread conducting film (60), the second semiconductor layer (50) and active layer (40) part.?
In the case of current spread conducting film (60) is omitted, groove (35) is by removing the second semiconductor layer (50) and active layer (40)
A part and formed.
In active layer (40), utilize electronics and hole in conjunction with and also produce heat while generating light, and by this
The heat of sample is successfully dispelled the heat most important.First electrode (80) and the second electrode (70) and the gold being formed at Submount (1100)
Metal patterns (1080,1070) engages and is used (with reference to Figure 11), and therefore heat radiation based on heat transfer is mainly by the first electrode
(80) and the second electrode (70) and realize.Now, the gap of the first electrode (80) and the second electrode (70) and Submount
(1100) separate, in described gap, be generally of air.Therefore, the gap of the first electrode (80) and the second electrode (70) is scattered
The thermal efficiency is less than the first electrode (80) and the second electrode (70).Even if it addition, the first electrode (80) and the second electrode (70) it
Between possess megohmite insulant, but in the ordinary course of things, megohmite insulant is poorer than the first electrode (80) and the second electrode (70) conductivity of heat.
In the case of semiconductor light-emitting elements is with high electric current and/or high power (high-power) action, asking of heat radiation
Topic becomes big, and the heat dissipation problem between the first electrode (80) and the second electrode (70) is preventing the durability that caused by life-time service
Or because of extremely important during thermally-induced hydraulic performance decline.It addition, as it has been described above, semiconductor light-emitting elements is installed to by SMT mode
On Submount (1100), and the first electrode (80) and the second electrode (70) are because being formed at the metal pattern of Submount (1100)
The use etc. of the mating substance such as (1080,1070) and the error of arrangement, scolding tin, is reducing the first electrode (80) and the second electrode
(70) interval between or be restricted when increasing the first electrode (80) and the second electrode (70) area, the first electrode (80) and the
Interval between two electrodes (70) is the trend being gradually increased on the contrary.
In the present embodiment, as it has been described above, form multiple groove (35) at illuminating part (30,40,50,60), thus first
Reduce the generation of heat between electrode (80) and the second electrode (70), thus suppress or prevent because thermally-induced described durability declines
Or the problem of hydraulic performance decline.Each groove (35) can be spaced apart with island (island) shape and be formed, it is possible to be formed as a little
(dot) shape, or be formed as the canal shape of strip or be deformed into variously-shaped.Furthermore it is also possible at the first electrode (80) and second
With the certain multiple groove of Density Distribution (35) between electrode (70), it is possible to so that the density of ad-hoc location (such as: central authorities) is than it
His position more crypto set.Unlike this, it is also contemplated that reduce the quantity of groove (35), and increase the horizontal and vertical of groove (35)
The embodiment of size.
In the present embodiment, the second semiconductor layer (50) and active layer (40) is removed in order to form such groove (35)
A part, therefore reduces the generation of heat, thus first between the first electrode (80) and the second electrode (70) correspondingly
When the temperature of illuminating part (30,40,50,60) being remained proper temperature between electrode (80) and the second electrode (70), and do not have
The situation of groove (35) is compared, advantageously.
It addition, groove (35) can prevent the thermogenetic stress of reason from damaging semiconductor light-emitting elements.Such as, groove (35) can also
Enough play the buffering of deformation when multiple semiconductor layers (30,40,50) and/or current spread conducting film (60) expansion or shrinkage to make
With, thus possess suppression and caused the effect of slight crack or cracking etc. by differing from of thermal coefficient of expansion.It addition, groove (35) increases multiple half
The surface area of conductor layer (30,40,50) and be favorably improved radiating efficiency.It addition, groove (35) act as being formed at multiple half
The scattering part of the inside of conductor layer (30,40,50), thus also advantageously improves light extraction efficiency.
For symbol unaccounted in Fig. 3, illustrate in following content.
Below, illustrate as a example by group iii nitride semiconductor light emitting device.
Fig. 4 is the figure of an example of the manufacture method of the semiconductor light-emitting elements for the present invention is described, first, such as Fig. 4 a institute
Show, at substrate (10) the multiple semiconductor layers of upper formation (30,40,50).As substrate (10) mainly use sapphire, SiC, Si,
GaN etc., substrate (10) is eventually removed.Multiple semiconductor layers (30,40,50) including: is formed at the cushion on substrate (10)
(not shown)；Possesses the first semiconductor layer (30 of the first electric conductivity；Such as: doped with the GaN of Si)；Possess and the first electric conductivity
Second semiconductor layer (50 of the second different electric conductivity；Such as: doped with the GaN of Mg)；And between the first semiconductor layer (30)
And between the second semiconductor layer (50), by electronics and hole in conjunction with and generate the active layer (40 of light；Such as: InGaN/
(In) GaN multi-quantum pit structure).The position of the first semiconductor layer (30) and the second semiconductor layer (50) is replaceable, at three races's nitrogen
Compound semiconductor light-emitting elements is mainly made up of GaN.Multiple semiconductor layers (30,40,50) are respectively structured as multilamellar, can omit
Cushion.
Afterwards, it is preferably at the second semiconductor layer (50) upper formation current spread conducting film (60).Situation in p-type GaN
Under, current spread ability declines, and in the case of be made up of p-type semiconductor layer (50) GaN, major part needs to accept current spread
The help of conducting film (60).Such as, the such material of ITO, Ni/Au is used as current spread conducting film (60).
Then, remove current spread conducting film (60) and multiple semiconductor layer (30,40,50) and form groove (35).It addition,
Become discrete component to isolate (isolation), the gabarit edge of multiple semiconductor layers (30,40,50) is also carried out table top erosion
Carving, in order to be connected with the first conductive part (81), a part for the first semi-conductive layer is exposed and forms contact site.Such groove
(35), the formation of edge etch and contact site preferably concurrently forms.Unlike this, it is also possible to forming current spread conduction
Remove multiple semiconductor layer (30,40,50) before film (60), and avoid groove (35) and form current spread conducting film (60).Groove
(35) the degree of depth can be identical with described contact site, it is also possible to regulating platform facet etch, such as, makes formation edge or contact site and groove
(35) the etching mask of part is different, so that the degree of depth of groove (35) is different from the etch depth of described contact site or edge.
Certainly, with the present embodiment differently, it is also possible to consider not to be etched with active layer (40) to form groove (35), and only
Till etching into the second semiconductor layer (50), or till only etching into current spread conducting film (60).
Then, with reference to Fig. 4 b, after forming groove (35), the first quasiconductor is being exposed accordingly with the first conductive part (81)
The first contact electrode (82) is formed, with the second conductive part (81) accordingly at current spread conducting film on the contact site of layer (30)
(60) upper formation the second contact electrode (72).Contact electrode (82,72) can be omitted, but be electrically connected to reduce contact resistance realization
The stability connect, is preferably provided with this contact electrode (82,72).Afterwards, formed covering the mode of illuminating part (30,40,50,60)
Insulating barrier (91).Being preferably, insulating barrier (91) etches the region of multiple semiconductor layers (30,40,50) with covering, current spread is led
The mode of electrolemma (60) and contact electrode (82,72) is formed.Therefore, groove (35) also can be covered by insulating barrier (91), in groove (35)
The most also insulating barrier (91) can be formed.
In the present embodiment, insulating barrier (91) is insulating properties reflectance coating, will be from the luminous reflectance of active layer (40) to substrate
(10) side.Absorbing to reduce the light caused by metallic reflective coating, insulating barrier (91) is formed by insulating properties material, though being formed as
Monolayer, but it is preferably formed into repeatedly (91a, 91b, 91c) structure.As the material of composition repeatedly (91a, 91b, 91c), can use
Electrolyte (such as: SiOx, TiOx etc.), as an example of multiple structure, insulating barrier (91) can include distributed Bragg reflecting layer
(DBR；Distributed Bragg Reflector).
Then, with reference to Fig. 4 c, form opening by the method for dry ecthing etc. at insulating barrier (91) and expose contact electrode
The part of (82,72), and form contact with first that electrode (82) and second contacts that electrode (72) contacts respectively first and conduct electricity
Portion (81) and the second conductive part (81).About the first electrode (80) and the second electrode (70), by the method for stacking, plating etc.,
At the such metal of Al, Ag that insulating barrier (91) upper formation reflectance is high, and to lead with the first conductive part (81) and second respectively
The mode that electricity portion (81) connects is formed.First electrode (80) and the second electrode (70) are formed together with conductive part (81,71).In order to
Realize stable electrical contact, Cr, Ti, Ni or their alloy can be used to form the first electrode (80) and the second electrode (70),
Its material is not particularly limited.First electrode (80) and the second electrode (70) are by scolding tin, electric conductivity soldering paste, eutectic weldering etc.
Method engages with the metal pattern (1080,1070) of Submount (1100).The first electrode (80) and the second electrode (70) it
Between be formed with above-mentioned groove (35), because decreasing heat radiation, temperature is maintained at suitable scope.
Fig. 5 is the figure of another example of the semiconductor light-emitting elements for the present invention is described, groove (35) is only formed at high electric current
Dispersing conductive film (60) and do not etch multiple semiconductor layer (30,40,50).Multiple semiconductor layers (30,40,50) form electricity
After stream dispersing conductive film (60), current spread conducting film (60) is etched and forms multiple groove (35), or can also
Groove (35) is formed while forming current spread conducting film (60).Due to current spread conducting film (60) dissufion current, therefore
In the region being formed with groove (35), other parts of current ratio flowed downwards from current spread conducting film (60) are few, thus subtract
The heat radiation of few part corresponding with groove (35).It addition, increase the contact area with insulating barrier (91) according to groove (35), thus carry
High cooling efficiency.
Fig. 6 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described, obtains as along line A-A
The example of section, Fig. 3 and Fig. 5 can be enumerated.First electrode (80) and the second electrode (70) so that edge toward each other and across
The mode at interval separates from insulating barrier (91).Multiple grooves (35) of point (dot) shape are formed at the first electrode (80) and the second electricity
Illuminating part (30,40,50,60) between pole (70), and covered by insulating barrier (91).Multiple first conductive parts (81) and second are led
Electricity portion (81) is respectively formed in the first electrode (80) and the lower section of the second electrode (70).In the present embodiment, multiple grooves (35) are only
It is formed between the first electrode (80) and the second electrode (70), but there is the problem caused because of focus or heat radiation in specific location
In the case of, it is also contemplated that the illuminating part (30,40,50,60) at the first electrode (80) and the second electrode (70) lower section forms groove
(35)。
Fig. 7 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described, in the example shown in Fig. 7 a,
The second semiconductor layer (50) and the active layer (40) of certain length is removed continuously between first electrode (80) and the second electrode (70)
And form groove (35).After forming multiple semiconductor layers (30,40,50) and forming groove (35), avoid groove (35) and form electricity
Stream dispersing conductive film (60).In this case, formed in the way of insulating barrier (91) is till extending to groove (35).With the present embodiment
Different, it is also possible to form insulator at groove (35), and to cover insulator and the mode shape of multiple semiconductor layer (30,40,50)
Become current spread conducting film (60).
In the example shown in Fig. 7 b, groove (35) is only formed at current spread conducting film (60).Multiple semiconductor layers (30,
40,50), after upper formation current spread conducting film (60), current spread conducting film (60) is etched and forms multiple groove
, or while forming current spread conducting film (60), form groove (35) (35).
Fig. 8 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described, as obtain along line B-B
The example of section, can enumerate Fig. 7 a and Fig. 7 b.Multiple grooves (35) are not point-like, and are created as from the first electrode (80) towards
The canal shape of two electrodes (70).As shown in Fig. 6 and Fig. 8, can be all kinds by the shape distortion of groove (35).
Fig. 9 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described, shown in Fig. 9 a and Fig. 9 b
In example, current spread conducting film (60) reflects the light from active layer (40) as metallic reflective coating (60).In Fig. 9 a institute
In the example shown, remove current spread conducting film (60), the second semiconductor layer (50), active layer (40) and form groove (35),
In example shown in Fig. 9 b, only remove current spread conducting film (60) and form groove (35).Insulating barrier (91) the most specially possesses use
In realizing the structure of reflection function, monolayer can be formed as, and thinner than above-mentioned insulating barrier (91) thickness.Such as, metal is anti-
Penetrate the monolayer that film (60) had both been formed as being made up of Al, Ag etc., it is possible to be formed as including what reflecting layer connected with insulating barrier (91)
The multiple structure on the barrier layer (such as: Ni etc.) between upper strata, reflecting layer and upper strata.
In the present embodiment, insulating barrier (91) is formed in the mode covering whole illuminating part (30,40,50,60), but also may be used
To become as follows with the present embodiment different terrain: expose a part for metallic reflective coating from insulating barrier, the second electrode with expose
Metallic reflective coating directly connects, and the first electrode is formed on the insulating layer.
It addition, in the case of current spread conducting film (60) is metallic reflective coating (60), it may be considered that anti-by insulating properties
Penetrate film (such as: DBR) and form the embodiment of insulating barrier (91).
Figure 10 is the figure of another example again of the semiconductor light-emitting elements for the present invention is described, is forming multiple semiconductor layers
(30,40,50), and after etching the second semiconductor layer (50) and active layer (40) and forming groove (35), by methods such as stackings
And in groove (35), fill insulator (41).Afterwards, the second semiconductor layer (50) and insulator (41) form metallic reflection
Film (60).Afterwards, insulating barrier (91), the first electrode (80) and the second electrode (70) are formed.Metallic reflective coating (60) is to cover groove
(35) mode is formed and reflects light, and the groove (35) between the first electrode (80) and the second electrode (70) reduces heat radiation.
Figure 11 is the figure making use-case of the semiconductor light-emitting elements for the present invention is described, at the gold of Submount (1100)
Metal patterns (1080,1070) engages the first electrode (80) and second electrode (70) of semiconductor light-emitting elements.From active layer
(40) part for light reflects or in metallic reflective coating (60) reflection towards substrate (10) side at insulating barrier (91).First electricity
Pole (80) with the second electrode (70) even if between do not connect with Submount (1100), but reduce heat radiation, therefore because of groove (35)
Temperature is maintained at proper level.
Below, the various embodiments of the present invention are illustrated.
(1) semiconductor light-emitting elements is characterised by, including illuminating part, it possesses: the first semiconductor layer, it has
One electric conductivity；Second semiconductor layer, it has second electric conductivity different from the first electric conductivity；And active layer, it is between first
Between semiconductor layer and the second semiconductor layer, utilize electronics and hole in conjunction with and generate light；Insulating barrier, it is formed at luminescence
The side in portion；And first electrode and the second electrode, this first electrode and the second electrode respectively with the first semiconductor layer and the second half
Conductor layer electrically connects, and is formed on identical direction relative to illuminating part, in this first electrode and the second electrode
At least one is located at the opposition side of illuminating part on the basis of insulating barrier, and the insulating barrier side between the first electrode and the second electrode is sent out
Light portion is formed with at least one groove.
(2) semiconductor light-emitting elements is characterised by, semiconductor light-emitting elements is flip-chip (flip chip), first
Electrode and the second electrode are formed at the opposition side of multiple semiconductor layer, described semiconductor light-emitting elements bag on the basis of insulating barrier
Include: the first conductive part, its through insulating barrier, the first electrode and the first semiconductor layer exposed by etching are electrically connected
Logical；And second conductive part, its through insulating barrier, electrically connect with the second semiconductor layer.
(3) semiconductor light-emitting elements is characterised by, at least one groove is by removing the second semiconductor layer and active layer
A part and formed.
(4) semiconductor light-emitting elements is characterised by, illuminating part includes electric current between the second semiconductor layer and insulating barrier
Dispersing conductive film, at least one groove is formed by removing a part for current spread conducting film.
(5) semiconductor light-emitting elements is characterised by, insulating barrier is insulating properties reflectance coating.
(6) semiconductor light-emitting elements is characterised by, illuminating part includes electric current between multiple semiconductor layers and insulating barrier
Dispersing conductive film, at least one groove is shape by removal current spread conducting film, the second semiconductor layer and a part for active layer
Become.
(7) semiconductor light-emitting elements is characterised by, current spread conducting film is metallic reflective coating.
(8) semiconductor light-emitting elements is characterised by, at least one Cao Yi island (island) shape is at the first electrode and second
It is formed with multiple between electrode.
(9) semiconductor light-emitting elements is characterised by, insulating properties reflectance coating includes distributed Bragg reflecting layer.
(10) semiconductor light-emitting elements is characterised by, illuminating part includes: fill the insulator of at least one groove；Metal is anti-
Penetrating film, it covers the second semiconductor layer and insulator, is formed between the second semiconductor layer and insulating barrier.
A semiconductor light-emitting elements according to the present invention, it is possible to suppress the semiconductor light-emitting elements in flip-chip variety
The middle durability caused because of heat and the decline of performance.
According to another semiconductor light-emitting elements again of the present invention, in the semiconductor light-emitting elements of flip-chip variety, generation
Use insulating properties reflectance coating for metallic reflective coating, thus reduce the absorption of the light caused by metallic reflective coating.
Claims (10)
1. semiconductor light-emitting elements, it is characterised in that including:
Illuminating part, it possesses: the first semiconductor layer, it has the first electric conductivity；Second semiconductor layer, it has and the first conduction
The second electric conductivity that property is different；And active layer, it is between the first semiconductor layer and the second semiconductor layer, utilizes electronics with empty
Cave in conjunction with and generate light；
Insulating barrier, it is formed at the side of illuminating part；And
First electrode and the second electrode, this first electrode and the second electrode are electric with the first semiconductor layer and the second semiconductor layer respectively
The connection of gas ground, and be formed on identical direction relative to illuminating part, at least one in this first electrode and the second electrode
The opposition side of illuminating part it is located on the basis of insulating barrier,
Insulating barrier side illuminating part between the first electrode and the second electrode is formed with at least one groove.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that
Semiconductor light-emitting elements is flip-chip (flip chip),
First electrode and the second electrode are formed at the opposition side of multiple semiconductor layer on the basis of insulating barrier,
Described semiconductor light-emitting elements includes:
First conductive part, its through insulating barrier, the first electrode and the first semiconductor layer exposed by etching are electrically connected
Logical；And
Second conductive part, its through insulating barrier, electrically connect with the second semiconductor layer.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that
At least one groove is formed by removing a part for the second semiconductor layer and active layer.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that
Illuminating part includes current spread conducting film between the second semiconductor layer and insulating barrier,
At least one groove is formed by removing a part for current spread conducting film.
5. according to the semiconductor light-emitting elements described in claim 3 or 4, it is characterised in that
Insulating barrier is insulating properties reflectance coating.
Semiconductor light-emitting elements the most according to claim 3, it is characterised in that
Illuminating part includes current spread conducting film between multiple semiconductor layers and insulating barrier,
At least one groove is formed by removing current spread conducting film, the second semiconductor layer and a part for active layer.
7. according to the semiconductor light-emitting elements described in any one in claim 4 to 6, it is characterised in that
Current spread conducting film is metallic reflective coating.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that
At least one Cao Yi island (island) shape is formed multiple between the first electrode and the second electrode.
Semiconductor light-emitting elements the most according to claim 5, it is characterised in that
Insulating properties reflectance coating includes distributed Bragg reflecting layer.
Semiconductor light-emitting elements the most according to claim 3, it is characterised in that
Illuminating part includes:
The insulator that at least one groove is filled with；And
Metallic reflective coating, it covers the second semiconductor layer and insulator, and is formed between the second semiconductor layer and insulating barrier.
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| KR10-2014-0149069 | 2014-10-30 | ||
| KR1020140149069A KR101635521B1 (en) | 2014-10-30 | 2014-10-30 | Semiconductor light emitting device |
| PCT/KR2015/011574 WO2016068643A1 (en) | 2014-10-30 | 2015-10-30 | Semiconductor light emitting device |
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| KR (1) | KR101635521B1 (en) |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170857A (en) * | 2017-04-25 | 2017-09-15 | 淮安澳洋顺昌光电技术有限公司 | The preparation method of LED flip chip |
| CN108574032A (en) * | 2017-03-10 | 2018-09-25 | 英属开曼群岛商錼创科技股份有限公司 | Light-emitting component and display equipment |
| WO2021121324A1 (en) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | Light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11309457B2 (en) | 2016-01-05 | 2022-04-19 | Semicon Light Co., Ltd. | Semiconductor light-emitting element |
| KR102348950B1 (en) * | 2020-03-26 | 2022-01-11 | 주식회사 에스엘바이오닉스 | Semiconductor light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024891A (en) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | Light-emitting element |
| JP2011108859A (en) * | 2009-11-18 | 2011-06-02 | Toyoda Gosei Co Ltd | Group iii nitride compound semiconductor light emitting element |
| JP2012138499A (en) * | 2010-12-27 | 2012-07-19 | Rohm Co Ltd | Light-emitting element, light-emitting element unit, and light-emitting element package |
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| KR20050049066A (en) * | 2003-11-21 | 2005-05-25 | 엘지이노텍 주식회사 | Light emitting diode and method for manufacturing light emitting diode |
| JP5541260B2 (en) * | 2011-03-21 | 2014-07-09 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
| JP5715593B2 (en) * | 2012-04-25 | 2015-05-07 | 株式会社東芝 | Semiconductor light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024891A (en) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | Light-emitting element |
| JP2011108859A (en) * | 2009-11-18 | 2011-06-02 | Toyoda Gosei Co Ltd | Group iii nitride compound semiconductor light emitting element |
| JP2012138499A (en) * | 2010-12-27 | 2012-07-19 | Rohm Co Ltd | Light-emitting element, light-emitting element unit, and light-emitting element package |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108574032A (en) * | 2017-03-10 | 2018-09-25 | 英属开曼群岛商錼创科技股份有限公司 | Light-emitting component and display equipment |
| CN107170857A (en) * | 2017-04-25 | 2017-09-15 | 淮安澳洋顺昌光电技术有限公司 | The preparation method of LED flip chip |
| WO2021121324A1 (en) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | Light-emitting diode |
Also Published As
| Publication number | Publication date |
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| KR101635521B1 (en) | 2016-07-05 |
| KR20160053010A (en) | 2016-05-13 |
| WO2016068643A1 (en) | 2016-05-06 |
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