CN205723602U - Flip LED chips is hindered on a kind of anti-top - Google Patents
Flip LED chips is hindered on a kind of anti-top Download PDFInfo
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- CN205723602U CN205723602U CN201620583722.9U CN201620583722U CN205723602U CN 205723602 U CN205723602 U CN 205723602U CN 201620583722 U CN201620583722 U CN 201620583722U CN 205723602 U CN205723602 U CN 205723602U
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Abstract
Flip LED chips is hindered on a kind of anti-top, including: substrate, ray structure, the first insulating barrier, first N-type electrode, the second insulating barrier, the second N-type electrode and P-type electrode, wherein, stagger chip position of contacting with thimble of the first N-type electrode when encapsulation in first N-type electrode position, first N-type electrode has graphical isolation, prevents thimble in encapsulation process from being worn on insulating barrier top and the P, the N electrode that cause turn on the short circuit caused, and improves the chip reliability when encapsulation.
Description
Technical field
This utility model relates to semiconductor photoelectric device and semiconductor lighting manufactures field, especially relates to a kind of upside-down mounting
LED chip.
Background technology
LED, as the solid cold light source of a new generation, has the features such as low energy consumption, life-span length, easy to control, safety and environmental protection, is
Preferably energy saving environmental protection product, is suitable for various illumination places.
Conventional LED chip is generally Sapphire Substrate, and heat dispersion is poor, easily makes to leak electricity, light decay is serious, voltage
The problems such as height, have a strong impact on the unfailing performance of LED chip.
Flip LED chips is compared with conventional LED chip, has homogeneous current distribution, good heat dissipation, voltage reduction, efficiency height
Etc. advantage.Flip LED chips is during encapsulation uses, and the front of chip need to overturn down, is acted directly on down by thimble
On the metal electrode of dress LED chip, therefore, as it is shown in figure 1, thimble is easily hindered metal electrode and insulating barrier top, upside-down mounting is caused
The problems such as LED chip short circuit and electric leakage.
Summary of the invention
In view of this, this utility model provides a kind of anti-top and hinders flip LED chips, to solve thimble top in prior art
The problem hindering flip LED chips.
For achieving the above object, the following technical scheme of this utility model offer:
Flip LED chips is hindered on a kind of anti-top, including:
Substrate；
Ray structure, described ray structure is positioned at described substrate surface and includes: be positioned at the n type gallium nitride of described substrate surface
Layer, is positioned at described n type gallium nitride layer and deviates from the active layer of described substrate side, is positioned at described active layer and deviates from the nitridation of described N-type
The p-type gallium nitride layer of gallium layer side, is positioned at described p-type gallium nitride layer and deviates from the metallic reflector of described n type gallium nitride layer side；
First insulating barrier, described first insulating barrier is positioned at described metallic reflector and deviates from described p-type gallium nitride layer side；
First N-type electrode, described first N-type electrode is positioned at described first insulating barrier and deviates from described metallic reflector side,
And run through described first insulating barrier and described ray structure and extend to described n type gallium nitride layer surface, and described first N-type electricity
On the position that pole does not contacts with thimble when chip package；
Second insulating barrier, described second insulating barrier is positioned at described N-type electrode and described first insulating barrier deviates from described metal
Side, reflecting layer；
Second N-type electrode, described second N-type electrode is positioned at described second insulating barrier and deviates from described first insulating barrier side,
Run through described second insulating barrier and extend to described first N-type electrode surface；
P-type electrode, described P-type electrode is positioned at described second insulating barrier and deviates from described first insulating barrier side, runs through described
Second insulating barrier, the first insulating barrier and ray structure also extend to described p-type gallium nitride layer surface.
Preferably, the quantity of described first N-type electrode is more than or equal to 2.
Preferably, the quantity of described second N-type electrode is less than the quantity equal to described first N-type electrode.
Preferably, described first N-type electrode has graphical isolation.
Compared with prior art, technical scheme provided by the utility model has the advantage that
Flip LED chips is hindered on the anti-top of one that this utility model provides, and chip has been staggered in encapsulation in the first N-type electrode position
Time the position that contacts with thimble of the first N-type electrode, the first N-type electrode has graphical isolation, prevents thimble in encapsulation process
P, the N electrode worn on insulating barrier top and cause turn on the short circuit caused, and improve the chip reliability when encapsulation.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, the accompanying drawing in describing below is only
It is embodiments more of the present utility model, for those of ordinary skill in the art, in the premise not paying creative work
Under, it is also possible to other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 is the structural representation of flip LED chips in prior art；
Fig. 2 hinders the structural representation of flip LED chips for a kind of anti-top that this utility model embodiment provides；
In figure, 1-substrate, 2-N type gallium nitride layer, 3-active layer, 4-P type gallium nitride layer, 5-P type electrode, 6-first insulate
Layer, 7-N type electrode, 8-the second insulating barrier.
Detailed description of the invention
As described in background, flip LED chips of the prior art thimble in encapsulation process is easily electric metal
Pole and insulating barrier top wound, cause the problems such as flip LED chips short circuit and electric leakage.
Based on this, this utility model provides a kind of anti-top and hinders flip LED chips, above-mentioned with overcome prior art to exist
Problem, including:
Substrate；Ray structure, described ray structure is positioned at described substrate surface and includes: be positioned at the N-type of described substrate surface
Gallium nitride layer, is positioned at described n type gallium nitride layer and deviates from the active layer of described substrate side, be positioned at described active layer and deviate from described N
The p-type gallium nitride layer of type gallium nitride layer side, is positioned at described p-type gallium nitride layer and deviates from the metal of described n type gallium nitride layer side
Reflecting layer；First insulating barrier, described first insulating barrier is positioned at described metallic reflector and deviates from described p-type gallium nitride layer side；The
One N-type electrode, described first N-type electrode is positioned at described first insulating barrier and deviates from described metallic reflector side, and runs through described
First insulating barrier and described ray structure also extend to described n type gallium nitride layer surface, and described first N-type electrode is not at chip
On the position contacted with thimble during encapsulation；Second insulating barrier, described second insulating barrier is positioned at described N-type electrode and described first exhausted
Edge layer deviates from described metallic reflector side；Second N-type electrode, described second N-type electrode is positioned at described second insulating barrier and deviates from
Described first insulating barrier side, runs through described second insulating barrier and extends to described first N-type electrode surface；P-type electrode, described
P-type electrode is positioned at described second insulating barrier and deviates from described first insulating barrier side, runs through described second insulating barrier, the first insulating barrier
With ray structure extend to described p-type gallium nitride layer surface.
Flip LED chips is hindered on the anti-top of one that this utility model provides, and chip has been staggered in encapsulation in the first N-type electrode position
Time the position that contacts with thimble of the first N-type electrode, the first N-type electrode has graphical isolation, prevents thimble in encapsulation process
P, the N electrode worn on insulating barrier top and cause turn on the short circuit caused, and improve the chip reliability when encapsulation.
It is above core concept of the present utility model, for enabling above-mentioned purpose of the present utility model, feature and advantage more
Add and become apparent, below in conjunction with the accompanying drawings detailed description of the invention of the present utility model is described in detail.
Elaborate a lot of detail in the following description so that fully understanding this utility model, but this practicality is new
Type can also use other to be different from alternate manner described here to implement, and those skilled in the art can be without prejudice to this reality
Doing similar popularization in the case of novel intension, therefore this utility model is not limited by following public specific embodiment.
Secondly, this utility model combines schematic diagram and is described in detail, when describing this utility model embodiment in detail, for ease of
Illustrate, represent that the profile of device architecture can be disobeyed general ratio and made partial enlargement, and described schematic diagram is example, its
This should not limit the scope of this utility model protection.Additionally, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication
Between size.
Describe in detail below by specific embodiment.
Present embodiments provide a kind of anti-top and hinder flip LED chips, as in figure 2 it is shown, include:
Substrate 10；
Ray structure 20, ray structure 20 is positioned at substrate 10 surface and includes: be positioned at the n type gallium nitride layer on substrate 10 surface
21, it is positioned at the active layer 22 of n type gallium nitride layer 21 away from substrate 10 side, is positioned at active layer 22 and deviates from n type gallium nitride layer 21 1
The p-type gallium nitride layer 23 of side, is positioned at p-type gallium nitride layer 23 and deviates from the metallic reflector 23 of n type gallium nitride layer 21 side；
First insulating barrier 30, the first insulating barrier 30 is positioned at metallic reflector 24 and deviates from p-type gallium nitride layer 23 side；
First N-type electrode 40, the first N-type electrode 40 is positioned at the first insulating barrier 30 and deviates from described metallic reflector 24 side,
And run through the first insulating barrier 30 and ray structure 20 and extend to n type gallium nitride layer 21 surface, and the first N-type electrode 40 is not at core
On the position contacted with thimble during sheet encapsulation；
Second insulating barrier 50, the second insulating barrier 50 is positioned at the first N-type electrode 40 and the first insulating barrier 30 deviates from metallic reflection
Layer 24 side；
Second N-type electrode 61, the second N-type electrode 61 is positioned at the second insulating barrier 50 and deviates from the first insulating barrier 30 side, runs through
Second insulating barrier 50 also extends to the first N-type electrode 40 surface；
P-type electrode 62, P-type electrode 62 is positioned at the second insulating barrier 50 and deviates from the first insulating barrier 30 side, runs through the second insulation
Layer the 50, first insulating barrier 30 and ray structure 20 extend to p-type gallium nitride layer 23 surface.
The quantity of the first N-type electrode 40 in the present embodiment is more than or equal to 2.Wherein, the quantity of the second N-type electrode 61 is less than
Quantity equal to the first N-type electrode 40.
Further, the first N-type electrode 40 has graphical isolation.
Flip LED chips is hindered on the anti-top of one that the present embodiment provides, and chip has been staggered when encapsulation in the first N-type electrode position
The position that first N-type electrode contacts with thimble, the first N-type electrode has graphical isolation, prevents thimble in encapsulation process from inciting somebody to action
P, N electrode that insulating barrier top is worn and caused turn on the short circuit caused, and improve the chip reliability when encapsulation.Wherein, described
Photo structure includes n type gallium nitride layer, active layer, p-type gallium nitride layer and the metallic reflector sequentially formed.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses this practicality new
Type.Multiple amendment to these embodiments will be apparent from for those skilled in the art, is determined herein
The General Principle of justice can realize in the case of without departing from spirit or scope of the present utility model in other embodiments.Cause
This, this utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest scope consistent with features of novelty.
Claims (4)
1. a flip LED chips is hindered on anti-top, including:
Substrate；
Ray structure, described ray structure is positioned at described substrate surface and includes: be positioned at the n type gallium nitride layer of described substrate surface,
It is positioned at described n type gallium nitride layer and deviates from the active layer of described substrate side, be positioned at described active layer and deviate from described n type gallium nitride layer
The p-type gallium nitride layer of side, is positioned at described p-type gallium nitride layer and deviates from the metallic reflector of described n type gallium nitride layer side；
First insulating barrier, described first insulating barrier is positioned at described metallic reflector and deviates from described p-type gallium nitride layer side；
First N-type electrode, described first N-type electrode is positioned at described first insulating barrier and deviates from described metallic reflector side, and passes through
Wear described first insulating barrier and described ray structure and extend to described n type gallium nitride layer surface, and described first N-type electrode is not
On the position contacted with thimble when chip package；
Second insulating barrier, described second insulating barrier is positioned at described N-type electrode and described first insulating barrier deviates from described metallic reflection
Layer side；
Second N-type electrode, described second N-type electrode is positioned at described second insulating barrier and deviates from described first insulating barrier side, runs through
Described second insulating barrier also extends to described first N-type electrode surface；
P-type electrode, described P-type electrode is positioned at described second insulating barrier and deviates from described first insulating barrier side, runs through described second
Insulating barrier, the first insulating barrier and ray structure also extend to described p-type gallium nitride layer surface.
Flip LED chips the most according to claim 1, it is characterised in that the quantity of described first N-type electrode is more than or equal to
2。
Flip LED chips the most according to claim 2, it is characterised in that the quantity of described second N-type electrode is less than being equal to
The quantity of described first N-type electrode.
Flip LED chips the most according to claim 1, it is characterised in that described first N-type electrode have graphically every
From.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620583722.9U CN205723602U (en) | 2016-06-16 | 2016-06-16 | Flip LED chips is hindered on a kind of anti-top |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620583722.9U CN205723602U (en) | 2016-06-16 | 2016-06-16 | Flip LED chips is hindered on a kind of anti-top |
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| CN205723602U true CN205723602U (en) | 2016-11-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516702A (en) * | 2016-06-16 | 2017-12-26 | 佛山市国星半导体技术有限公司 | Hinder flip LED chips in a kind of anti-top |
| CN107516702B (en) * | 2016-06-16 | 2024-07-09 | 佛山市国星半导体技术有限公司 | Anti-top damage flip LED chip |
-
2016
- 2016-06-16 CN CN201620583722.9U patent/CN205723602U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516702A (en) * | 2016-06-16 | 2017-12-26 | 佛山市国星半导体技术有限公司 | Hinder flip LED chips in a kind of anti-top |
| CN107516702B (en) * | 2016-06-16 | 2024-07-09 | 佛山市国星半导体技术有限公司 | Anti-top damage flip LED chip |
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