CN205723629U - A kind of leakproof indigo plant chip - Google Patents

Abstract

A kind of leakproof indigo plant chip, there is the first through hole, and there is the metallic reflector of highly reflective energy at the first through-hole side wall, so preferably the luminous reflectance of chip sides can be returned chip internal, the leakage indigo plant problem reducing chip sides to go out light and to cause, meanwhile, the luminous reflectance of chip sides is gone back to inside can be increased chip axle and go out light mutually, improves the brightness of chip and improves the light distribution of chip.

Description

A kind of leakproof indigo plant chip

Technical field

This utility model relates to semiconductor photoelectric device and semiconductor lighting manufactures field, especially relates to a kind of LED Chip.

Background technology

LED, as the solid cold light source of a new generation, has the features such as low energy consumption, life-span length, easy to control, safety and environmental protection, is Preferably energy saving environmental protection product, is suitable for various illumination places.

In existing encapsulation process, in LED chip, directly spray layer of fluorescent powder, then carry out lens packages with mould. Traditional LED chip has five faces and goes out the feature of light, therefore in addition to front sprayed with fluorescent powder normally can go out light, and other sides, four sides Easily there is leaking the problem of indigo plant, jaundice etc. in wall, there is more serious different angles color distortion.

Summary of the invention

In view of this, this utility model provides a kind of leakproof indigo plant chip, with solve LED chip leakage in prior art blue, The problem of jaundice etc..

For achieving the above object, the following technical scheme of this utility model offer:

A kind of leakproof indigo plant chip, including:

Substrate；

Ray structure, described ray structure is positioned at described substrate surface and includes: be positioned at the n type gallium nitride of described substrate surface Layer, is positioned at described n type gallium nitride layer and deviates from the active layer of described substrate side, is positioned at described active layer and deviates from the nitridation of described N-type The p-type gallium nitride layer of gallium layer side；

First through hole, described first through hole, completely through described ray structure, extends to described substrate surface；

Insulating barrier, described insulating barrier is positioned at the sidewall of described first through hole；

Metallic reflector, described metallic reflector is positioned at the sidewall of described first through hole；

Electrode structure, described electrode structure includes: is positioned at the N-type electrode on described n type gallium nitride layer surface and is positioned at described P The P-type electrode on type gallium nitride layer surface.

Preferably, one or more during the material of described metallic reflector is Au, Ag, Al, Pt, Zn.

Preferably, the one or several during the material of described P-type electrode and N-type electrode is Ag, Al, Pd, Pt, Au, W, Ni, Ti Plant alloy.

Compared with prior art, technical scheme provided by the utility model has the advantage that

A kind of leakproof indigo plant chip that this utility model provides, has the first through hole, LED wafer is divided into multiple LED chip, Further, the first through-hole side wall has the metallic reflector of highly reflective energy, so can preferably the luminous reflectance of chip sides be returned Chip internal, the leakage indigo plant problem that minimizing chip sides goes out light and causes, meanwhile, the luminous reflectance of chip sides is gone back to inside can be increased Chip axle goes out light mutually, improves the brightness of chip and improves the light distribution of chip.

Accompanying drawing explanation

In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to embodiment Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, the accompanying drawing in describing below is only It is embodiments more of the present utility model, for those of ordinary skill in the art, in the premise not paying creative work Under, it is also possible to other accompanying drawing is obtained according to these accompanying drawings.

The structural representation of a kind of leakproof indigo plant chip that Fig. 1 provides for this utility model embodiment.

Detailed description of the invention

As described in background, the problem that LED chip of the prior art easily occurs leakage indigo plant etc. in encapsulation process.

Based on this, this utility model provides a kind of leakproof indigo plant chip, with the problems referred to above overcoming prior art to exist, bag Include:

Substrate；

Ray structure, described ray structure is positioned at described substrate surface and includes: be positioned at the n type gallium nitride of described substrate surface Layer, is positioned at described n type gallium nitride layer and deviates from the active layer of described substrate side, is positioned at described active layer and deviates from the nitridation of described N-type The p-type gallium nitride layer of gallium layer side；

First through hole, described first through hole, completely through described ray structure, extends to described substrate surface；

Insulating barrier, described insulating barrier is positioned at the sidewall of described first through hole；

Metallic reflector, described metallic reflector is positioned at the sidewall of described first through hole；

Electrode structure, described electrode structure includes: is positioned at the N-type electrode on described n type gallium nitride layer surface and is positioned at described P The P-type electrode on type gallium nitride layer surface.

Compared with prior art, technical scheme provided by the utility model has the advantage that

A kind of leakproof indigo plant chip that this utility model provides, has the first through hole, LED wafer is divided into multiple LED chip, Further, the first through-hole side wall has the metallic reflector of highly reflective energy, so can preferably the luminous reflectance of chip sides be returned Chip internal, the leakage indigo plant problem that minimizing chip sides goes out light and causes, meanwhile, the luminous reflectance of chip sides is gone back to inside can be increased Chip axle goes out light mutually, improves the brightness of chip and improves the light distribution of chip.

It is above core concept of the present utility model, for enabling above-mentioned purpose of the present utility model, feature and advantage more Add and become apparent, below in conjunction with the accompanying drawings detailed description of the invention of the present utility model is described in detail.

Elaborate a lot of detail in the following description so that fully understanding this utility model, but this practicality is new Type can also use other to be different from alternate manner described here to implement, and those skilled in the art can be without prejudice to this reality Doing similar popularization in the case of novel intension, therefore this utility model is not limited by following public specific embodiment.

Secondly, this utility model combines schematic diagram and is described in detail, when describing this utility model embodiment in detail, for ease of Illustrate, represent that the profile of device architecture can be disobeyed general ratio and made partial enlargement, and described schematic diagram is example, its This should not limit the scope of this utility model protection.Additionally, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication Between size.

Describe in detail below by specific embodiment.

Embodiment one

Present embodiments provide a kind of leakproof indigo plant chip, as it is shown in figure 1, include:

Substrate 10；

Ray structure 20, ray structure 20 is positioned at substrate 10 surface and includes: be positioned at the n type gallium nitride layer on substrate 10 surface 21, it is positioned at the active layer 22 of n type gallium nitride layer 21 away from substrate 10 side, is positioned at active layer 22 and deviates from n type gallium nitride layer 21 1 The p-type gallium nitride layer 23 of side；

First through hole 30, the first through hole 30 is completely through ray structure 20, and extends to substrate 10 surface；

Insulating barrier 31, insulating barrier 31 is positioned at the first through hole 30 sidewall；

Metallic reflector 32, metallic reflector 32 is positioned at the first through hole 30 sidewall；

Electrode structure, electrode structure includes: is positioned at the N-type electrode 41 on n type gallium nitride layer 21 surface and is positioned at p-type gallium nitride The P-type electrode 42 on layer 21 surface.

Wherein, the substrate 10 in the present embodiment can be the substrate that those skilled in the art commonly use, and e.g., substrate 10 can be Sapphire Substrate, gallium nitride substrate, silicon carbide substrates, silicon substrate etc., it is preferred to use Sapphire Substrate.

P-type electrode 61 in the present embodiment and N-type electrode 62 can use electrode material well known in the art, such as Ag, One or more alloys in Al, Pd, Pt, Au, W, Ni, Ti.

Further, the metallic reflector 40 in the present embodiment uses one or more systems in Au, Ag, Al, Pt, Zn Become.The present embodiment is preferably used Ag as metallic reflector, can improve the heat resistance of LED chip, corrosion resistance, make LED core Sheet more stability.Additionally, the metallic reflector being subsequently formed, P/N electrode can be insulated by the insulating barrier in the present embodiment, Prevent chip from short circuit occurring.

A kind of leakproof indigo plant chip that the present embodiment provides, has the first through hole, LED wafer is divided into multiple LED chip, and And, the first through-hole side wall has the metallic reflector of highly reflective energy, so can be preferably the luminous reflectance Hui Xin of chip sides Inside sheet, the leakage indigo plant problem that minimizing chip sides goes out light and causes, meanwhile, the luminous reflectance of chip sides is gone back to inside can increase core Bobbin goes out light mutually, improves the brightness of chip and improves the light distribution of chip.

Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses this practicality new Type.Multiple amendment to these embodiments will be apparent from for those skilled in the art, is determined herein The General Principle of justice can realize in the case of without departing from spirit or scope of the present utility model in other embodiments.Cause This, this utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein The widest scope consistent with features of novelty.

Claims (1)

1. a leakproof indigo plant chip, including:

Substrate；

Ray structure, described ray structure is positioned at described substrate surface and includes: be positioned at the n type gallium nitride layer of described substrate surface, It is positioned at described n type gallium nitride layer and deviates from the active layer of described substrate side, be positioned at described active layer and deviate from described n type gallium nitride layer The p-type gallium nitride layer of side；

First through hole, described first through hole, completely through described ray structure, extends to described substrate surface；

Insulating barrier, described insulating barrier is positioned at the sidewall of described first through hole；

Metallic reflector, described metallic reflector is positioned at the sidewall of described first through hole；

Electrode structure, described electrode structure includes: is positioned at the N-type electrode on described n type gallium nitride layer surface and is positioned at described p-type nitrogen Change the P-type electrode on gallium layer surface.