CN206610823U - Power type gallium nitride based LED chip - Google Patents
Power type gallium nitride based LED chip Download PDFInfo
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- CN206610823U CN206610823U CN201720353997.8U CN201720353997U CN206610823U CN 206610823 U CN206610823 U CN 206610823U CN 201720353997 U CN201720353997 U CN 201720353997U CN 206610823 U CN206610823 U CN 206610823U
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- gallium nitride
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Abstract
The utility model provides a kind of power type gallium nitride based LED chip, including yttrium-aluminium-garnet substrate, and its top and bottom is respectively equipped with the micro-convex structure of periodically three prismoid shapeds；N type gallium nitride layer is provided with the lower end of yttrium-aluminium-garnet substrate, and is located at the micro-convex structure of yttrium-aluminium-garnet substrate lower end and is stretched into n type gallium nitride layer；Antireflection layer, it is wrapped on the upper end of yttrium-aluminium-garnet substrate and four the week side of boss walls, and antireflection layer high index of refraction insulating barrier and low-refraction insulating barrier are alternately stacked；The gross thickness of antireflection layer is 1200 angstroms 7200 angstroms.Power type gallium nitride based LED chip described in the utility model, simple in construction, light emission rate is high.
Description
Technical field
The utility model belongs to semiconductor chip structure field, more particularly, to a kind of gallium nitride based light emitting diode core
Piece.
Background technology
Light emitting diode (LED) is as a kind of New Solid lighting source, so that its caloric value is low, power consumption is few, reaction is fast
Degree is fast, long lifespan, small volume the advantages of, it is considered to be the green illumination light source of 21 century.In order to adapt to present market demands,
LED luminous efficiency still needs further raising.At present, LED chip is mainly by growing gallium nitride on a sapphire substrate
(GaN) prepared by material system, but because the lattice mismatch between sapphire and GaN is higher, dislocation defects, shadow are easily produced
Ring mobility and the life-span of carrier, and then certain influence is also generated to the performance of GaN base device.
Utility model content
In view of this, the utility model is directed to a kind of power type gallium nitride based LED chip, existing to solve
Have in technology, lattice mismatch is higher between substrate and GaN, the problem of easily producing dislocation defects.
To reach above-mentioned purpose, what the technical solution of the utility model was realized in：
Power type gallium nitride based LED chip, including yttrium-aluminium-garnet substrate, its upper end are provided with periodicity Rhizoma Sparganii
The micro-convex structure of bench-type, lower end is provided with the lower micro-convex structure of some rectangular pyramids；N-type is provided with the lower end of yttrium-aluminium-garnet substrate
Gallium nitride layer, and lower micro-convex structure stretch into n type gallium nitride layer in；Antireflection layer, its be wrapped in yttrium-aluminium-garnet substrate upper end and
On four the week side of boss walls, antireflection layer is alternately stacked by high index of refraction insulating barrier and low-refraction insulating barrier；Antireflection layer is at least three layers, and
Its gross thickness is 1200 angstroms -7200 angstroms.
Further, also growth has AlN cushions between yttrium-aluminium-garnet substrate and the n type gallium nitride layer.
Further, the cycle of the micro-convex structure is 12 μm, and gap is 5 μm, is highly 1.5 μm.
Further, the lower end of the n type gallium nitride layer is provided with Ti/Al/Ni/Au N-type electrodes, and remainder growth has many
SQW；Growth has p-type gallium nitride layer, transparency conducting layer and Bragg reflecting layer successively from top to bottom for the lower end of MQW；
The lower end of Bragg reflecting layer is provided with Ni/Au P-type electrodes.
Further, the thickness of the transparency conducting layer is 20-150nm.
Further, the Bragg reflecting layer is alternately stacked by high refractive index material layer and low refractive index material layer, wherein
High refractive index material layer is TiO；Low refractive index material layer is SiO2。
Further, the lower end corrosion of the p-type gallium nitride layer has some fine pits, and being shaped as of fine pits is inverted just
Six terrace with edges.
Further, on the side wall of the MQW, p-type gallium nitride layer, transparency conducting layer, Bragg reflecting layer and Bradley
The lower end in lattice reflecting layer is also enclosed with the antireflection layer, and the Ti/Al/Ni/Au N-type electrodes stretch out antireflection layer；Prague is anti-
Penetrate layer and be provided with the material that antireflection layer is also filled with the groove until inside n type gallium nitride layer, groove.
Relative to prior art, power type gallium nitride based LED chip described in the utility model has following excellent
Gesture：
Power type gallium nitride based LED chip described in the utility model, simple in construction, light emission rate is high.By upper
Lower two ends have the yttrium-aluminium-garnet substrate of some micro-convex structures respectively, change propagation side of the light in substrate/space interface
To can effectively improve photon and escape probability of the present utility model, so as to reach the effect for improving light output efficiency.Pass through tool
The p-type gallium nitride layer for having fine pits coordinates transparency conducting layer and Bragg reflecting layer, is connect in increase p-type contact area, reduction
While electric shock resistance so that the light of directive p-type gallium nitride layer can be reflected back device, and directive yttroalumite again to greatest extent
The exiting surface of garnet substrate, further enhancing light extraction efficiency of the present utility model.By antireflection layer in the utility model
Each structure is protected, and compared to PV protective layers of the prior art, can be effectively reduced the surface reflectivity of its own, be carried
Rise luminous efficiency of the present utility model.
Brief description of the drawings
Constitute a part of accompanying drawing of the present utility model to be used for providing further understanding to of the present utility model, this practicality is new
The schematic description and description of type is used to explain the utility model, does not constitute to improper restriction of the present utility model.
In accompanying drawing：
Fig. 1 is the front view of the power type gallium nitride based LED chip described in the utility model embodiment；
Fig. 2 is the yttrium-aluminium-garnet lining of the power type gallium nitride based LED chip described in the utility model embodiment
The axonometric drawing at bottom；
The p-type gallium nitride layer of power type gallium nitride based LED chip described in Fig. 3 the utility model embodiments
Overlook to axonometric drawing.
Description of reference numerals：
1- yttrium-aluminium-garnet substrates；11- micro-convex structures；Micro-convex structure under 12-；2-N type gallium nitride layers；3- antireflection layers；31-
Groove；4- MQWs；5-P type gallium nitride layers；6- transparency conducting layers；7- Bragg reflecting layers；8-Ti/Al/Ni/Au N-types electricity
Pole；9-Ni/Au P-type electrodes；10- fine pits.
Embodiment
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the utility model can
To be mutually combined.
In description of the present utility model, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " on ", " under ",
The orientation or position relationship of the instruction such as "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer " are
Based on orientation shown in the drawings or position relationship, it is for only for ease of description the utility model and simplifies description, rather than indicate
Or imply that the device or element of meaning must have specific orientation, with specific azimuth configuration and operation, therefore be not understood that
For to limitation of the present utility model.In addition, term " first ", " second " etc. are only used for describing purpose, and it is not intended that indicating
Or imply relative importance or the implicit quantity for indicating indicated technical characteristic.Thus, " first ", " second " etc. are defined
Feature can express or implicitly include one or more this feature.In description of the present utility model, unless separately
It is described, " multiple " are meant that two or more.
, it is necessary to which explanation, unless otherwise clearly defined and limited, term " are pacified in description of the present utility model
Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integratedly
Connection；Can be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected to by intermediary,
It can be the connection of two element internals.For the ordinary skill in the art, on being understood by concrete condition
State concrete meaning of the term in the utility model.
Describe the utility model in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
Such as Fig. 1-3, the utility model proposes a kind of power type gallium nitride based LED chip, including yttrium-aluminium-garnet
Substrate 1, micro-convex structure 11 of its upper end provided with periodically three prismoid shapeds, lower end is provided with the lower micro-convex structure of some rectangular pyramids
12；Stretched into the lower end of yttrium-aluminium-garnet substrate 1 provided with n type gallium nitride layer 2, and lower micro-convex structure 12 in n type gallium nitride layer 2；
Antireflection layer 3, it is wrapped on the upper end of yttrium-aluminium-garnet substrate 1 and four the week side of boss walls, and antireflection layer 3 is by high index of refraction insulating barrier and low
Index dielectric layers are alternately stacked, and its most inner side (close to the side of yttrium-aluminium-garnet substrate 1) should be low-refraction insulating barrier；Increase
Permeable layers 3 are at least three layers, and its gross thickness is 1200 angstroms -7200 angstroms.
The yttrium-aluminium-garnet substrate 1 of micro-convex structure 11 and lower micro-convex structure 12 is respectively equipped with as light using top and bottom
Exit facet, can effective enlarging lighting area, the direction of propagation of changing section light increases the angle of emergence of light.Help to increase
Probability of the strong light from the utility model outgoing.
Also growth has AlN cushions between above-mentioned yttrium-aluminium-garnet substrate 1 and n type gallium nitride layer 2.AlN cushions are favourable
In the growth of follow-up n type gallium nitride layer 2：Low temperature epitaxial techniques first one layer of GaN buffering of epitaxial growth on AlN cushions can be used
Layer, island GaN can be obtained by the GaN cushions, be that the n type gallium nitride layer 2 of next step depositing high-quality low defect is spread
Pad.
The cycle of above-mentioned micro-convex structure 11 is 12 μm, and gap is 5 μm, is highly 1.5 μm.
The lower end of above-mentioned n type gallium nitride layer 2 is provided with Ti/Al/Ni/Au N-type electrodes 8, and remainder growth has MQW
4；Growth has p-type gallium nitride layer 5, transparency conducting layer 6 and Bragg reflecting layer 7 successively from top to bottom for the lower end of MQW 4；Cloth
The lower end in glug reflecting layer 7 is provided with Ni/Au P-type electrodes 9.Bragg reflecting layer 7 is as speculum, by directive p-type gallium nitride layer
5 light is reflected back device, and is finally sent by yttrium-aluminium-garnet substrate 1.
The thickness of above-mentioned transparency conducting layer 6 is 20-150nm.
The upper Bragg reflecting layer 7 is alternately stacked by high refractive index material layer and low refractive index material layer, wherein high folding
Rate material layer is penetrated for TiO；Low refractive index material layer is SiO2。
Bragg reflecting layer is constituted by two kinds of non-Ag material layers, the reflecting layer made relative to existing use Ag, tool
There is a higher reliability, reflectivity is below 300 degrees Celsius all without changing.Unstable metal Ag can effectively be avoided
The situation that reflectivity declines and causes chip brightness to reduce after oxidation.And non-Ag material layers are not present and easily moved as Ag
The conductive materials of shifting, therefore can avoid the occurrence of because reflecting layer migrates the feelings for the yield to form leak channel and reduce chip
Condition.It is more anti-than the reflecting layer that is made of Ag in addition, the Bragg reflecting layer being made up of the different non-Ag material layers of two kinds of refractive indexes
Penetrate that rate is higher, improve the luminous efficiency of LED chip.
The lower end corrosion of aforementioned p-type gallium nitride layer 5 has some fine pits 10, and being shaped as of fine pits 10 is inverted positive six
Terrace with edge.
Above-mentioned MQW 4, p-type gallium nitride layer 5, transparency conducting layer 6, on the side wall of Bragg reflecting layer 7 and Bradley
The lower end in lattice reflecting layer 7 is also enclosed with the antireflection layer 3, and the Ti/Al/Ni/Au N-type electrodes 8 stretch out antireflection layer 3；Bradley
Lattice reflecting layer 7 is provided with the material that antireflection layer 3 is also filled with the groove 31 until inside n type gallium nitride layer 2, groove 31.This
The emergent light that utility model is sent, during by antireflection layer 3, only 3-4% light is reflected, and can effectively improve luminous effect
Rate.Meanwhile, in the surrounding of Bragg reflecting layer 7, groove 31 is set, and the material of the antireflection layer 3 of insulation is filled, can be effective
Reduce the leakage current of chip.
Power type gallium nitride based LED chip described in the utility model, simple in construction, light emission rate is high.By upper
Lower two ends have the yttrium-aluminium-garnet substrate 1 of some micro-convex structures 11 and lower micro-convex structure 12 respectively, change light in substrate/sky
Between interface the direction of propagation, can effectively improve photon and escape probability of the present utility model, so as to reach raising light output
The effect of efficiency.Transparency conducting layer 6 and Bragg reflecting layer 7 are coordinated by the p-type gallium nitride layer 5 with fine pits 10,
While increasing p-type contact area, reduce contact resistance so that the light of directive p-type gallium nitride layer 5 can reflect to greatest extent
Device, and the exiting surface of directive yttrium-aluminium-garnet substrate 1 again are returned, light extraction efficiency of the present utility model is further enhancing.It is logical
Antireflection layer 3 is crossed to protect each structure in the utility model, can be effective compared to PV protective layers of the prior art
The surface reflectivity of its own is reduced, luminous efficiency of the present utility model is lifted.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Within the spirit and principle of utility model, any modification, equivalent substitution and improvements made etc. should be included in the utility model
Protection domain within.
Claims (8)
1. power type gallium nitride based LED chip, it is characterised in that including：
Yttrium-aluminium-garnet substrate (1), its upper end is respectively equipped with the micro-convex structure (11) of periodically three prismoid shapeds, and lower end is provided with some
The lower micro-convex structure (12) of rectangular pyramid；N type gallium nitride layer (2), and lower dimpling are provided with the lower end of yttrium-aluminium-garnet substrate (1)
Structure (12) is stretched into n type gallium nitride layer (2)；
Antireflection layer (3), it is wrapped in the upper end of yttrium-aluminium-garnet substrate (1), and passes through four the week side of boss of yttrium-aluminium-garnet substrate (1)
Wall is extended on the side wall of n type gallium nitride layer (2)；Antireflection layer (3) is replaced by high index of refraction insulating barrier and low-refraction insulating barrier
Stack；Antireflection layer (3) is at least three layers, and its gross thickness is 1200 angstroms -7200 angstroms.
2. power type gallium nitride based LED chip according to claim 1, it is characterised in that：The yttroalumite pomegranate
Also growth has AlN cushions between stone lining bottom (1) and n type gallium nitride layer (2).
3. power type gallium nitride based LED chip according to claim 1, it is characterised in that：The micro-convex structure
(11) cycle is 12 μm, and gap is 5 μm, is highly 1.5 μm.
4. power type gallium nitride based LED chip according to claim 1, it is characterised in that：The N-type nitridation
The lower end of gallium layer (2) is provided with Ti/Al/Ni/Au N-type electrodes (8), and remainder growth has MQW (4)；
Growth has p-type gallium nitride layer (5), transparency conducting layer (6) and Prague anti-successively from top to bottom for the lower end of MQW (4)
Penetrate layer (7)；The lower end of Bragg reflecting layer (7) is provided with Ni/Au P-type electrodes (9).
5. power type gallium nitride based LED chip according to claim 4, it is characterised in that：The electrically conducting transparent
The thickness of layer (6) is 20-150nm.
6. power type gallium nitride based LED chip according to claim 4, it is characterised in that：Described Prague is anti-
Penetrate layer (7) to be alternately stacked by high refractive index material layer and low refractive index material layer, wherein high refractive index material layer is TiO；Low folding
Rate material layer is penetrated for SiO2。
7. power type gallium nitride based LED chip according to claim 4, it is characterised in that：The p-type nitridation
The lower end corrosion of gallium layer (5) has some fine pits (10), and being shaped as of fine pits (10) is inverted positive six terrace with edge.
8. power type gallium nitride based LED chip according to claim 7, it is characterised in that：The MQW
(4), p-type gallium nitride layer (5), transparency conducting layer (6), on the side wall of Bragg reflecting layer (7) and Bragg reflecting layer (7)
Lower end is also enclosed with the antireflection layer (3), and the Ti/Al/Ni/Au N-type electrodes (8) stretch out antireflection layer (3)；
Bragg reflecting layer (7) is provided with until being also filled with the internal groove (31) of n type gallium nitride layer (2), groove (31)
The material of antireflection layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720353997.8U CN206610823U (en) | 2017-04-06 | 2017-04-06 | Power type gallium nitride based LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720353997.8U CN206610823U (en) | 2017-04-06 | 2017-04-06 | Power type gallium nitride based LED chip |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379899A (en) * | 2019-08-26 | 2019-10-25 | 厦门乾照光电股份有限公司 | A kind of LED chip and preparation method thereof |
| CN111697116A (en) * | 2020-06-19 | 2020-09-22 | 中国工程物理研究院电子工程研究所 | Visible light LED chip with micro-nano structure anti-reflection layer embedded in surface and preparation method |
| WO2021174548A1 (en) * | 2020-03-06 | 2021-09-10 | 天津三安光电有限公司 | Inverted light-emitting diode |
| CN113659054A (en) * | 2021-08-12 | 2021-11-16 | 芜湖启迪半导体有限公司 | UVC LED packaging device and preparation method thereof |
| CN113903845A (en) * | 2021-08-25 | 2022-01-07 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
-
2017
- 2017-04-06 CN CN201720353997.8U patent/CN206610823U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379899A (en) * | 2019-08-26 | 2019-10-25 | 厦门乾照光电股份有限公司 | A kind of LED chip and preparation method thereof |
| WO2021174548A1 (en) * | 2020-03-06 | 2021-09-10 | 天津三安光电有限公司 | Inverted light-emitting diode |
| KR20210125580A (en) * | 2020-03-06 | 2021-10-18 | 티엔진 산안 옵토일렉트로닉스 컴퍼니 리미티드 | flip chip light emitting diode |
| KR102612253B1 (en) | 2020-03-06 | 2023-12-08 | 티엔진 산안 옵토일렉트로닉스 컴퍼니 리미티드 | flip chip light emitting diode |
| CN111697116A (en) * | 2020-06-19 | 2020-09-22 | 中国工程物理研究院电子工程研究所 | Visible light LED chip with micro-nano structure anti-reflection layer embedded in surface and preparation method |
| CN113659054A (en) * | 2021-08-12 | 2021-11-16 | 芜湖启迪半导体有限公司 | UVC LED packaging device and preparation method thereof |
| CN113659054B (en) * | 2021-08-12 | 2023-08-29 | 安徽长飞先进半导体有限公司 | UVC LED packaging device and preparation method thereof |
| CN113903845A (en) * | 2021-08-25 | 2022-01-07 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
| CN113903845B (en) * | 2021-08-25 | 2023-12-22 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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