CN204577455U - A kind of flip LED chips - Google Patents
A kind of flip LED chips Download PDFInfo
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- CN204577455U CN204577455U CN201520219256.1U CN201520219256U CN204577455U CN 204577455 U CN204577455 U CN 204577455U CN 201520219256 U CN201520219256 U CN 201520219256U CN 204577455 U CN204577455 U CN 204577455U
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Abstract
The utility model relates to a kind of flip LED chips, comprise Sapphire Substrate, n-type GaN layer, quantum well MWQ layer, p-type GaN layer, Si substrate, weld layer, reflector, transition zone and Ohmic electrode, described n-type GaN layer, MWQ layer and p-type GaN layer are set in turn in Sapphire Substrate respectively, described weld layer comprises the first weld layer and the second weld layer, described Ohmic electrode comprises n-type electrode and p-type electrode, described n-type GaN layer comprises first surface and second surface away from the one side of Sapphire Substrate, described quantum well MWQ layer and p-type GaN layer are set in turn on first surface, described p-type electrode to be arranged in p-type GaN layer and to be connected with Si substrate by the first weld layer, described n-type electrode to be arranged on second surface and to be connected with Si substrate by the second weld layer.Flip LED chips of the present utility model has the beneficial effect that can improve light extraction efficiency, light utilization ratio and LED power output.
Description
Technical field
The utility model relates to LED technology field, particularly a kind of flip LED chips.
Background technology
LED chip is a kind of solid-state semiconductor device, and it directly can be converted into light electricity.Also referred to as LED light-emitting diode, LED chip diode, LED luminescence chip, be the core component of LED, the P-N junction namely referred to.Its major function is: be luminous energy electric energy conversion, and the main material of chip is monocrystalline silicon.Semiconductor wafer is made up of two parts, and a part is P type semiconductor, and inside it, occupy an leading position in hole, and the other end is N type semiconductor, at this side mainly electronics.But time these two kinds of semiconductors couple together, between them, just form a P-N junction.When electric current acts on this wafer by wire time, electronics will be pushed to P district, and in P district, electronics is with hole-recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is.And the wavelength of light i.e. the color of light, be determined by the material forming P-N junction.
Flip-chip packaging techniques is developed by nineteen sixty IBM Corporation, for reducing costs, improves speed, improve assembly reliability, FC is used in the 1st layer of chip and support plate bond package, and packaged type is that chip front side is down to substrate, without the need to wire bonding, form the shortest circuit, reduce resistance; Employing Metal Ball connects, and reduces package dimension, improves electrical performance, and solving BGA increases the puzzlement that number of pins needs extended volume.But the problem that flip LED chips ubiquity light extraction efficiency of the prior art is low.
Utility model content
Technical problem to be solved in the utility model is: provide the flip LED chips that a kind of light extraction efficiency is high.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is:
A kind of flip LED chips, comprise Sapphire Substrate, n-type GaN layer, quantum well MWQ layer, p-type GaN layer, Si substrate, weld layer, reflector, transition zone and Ohmic electrode, described n-type GaN layer, quantum well MWQ layer and p-type GaN layer are set in turn in Sapphire Substrate respectively, described weld layer comprises the first weld layer and the second weld layer, described Ohmic electrode comprises n-type electrode and p-type electrode, described n-type GaN layer comprises first surface and second surface away from the one side of Sapphire Substrate, described quantum well MWQ layer and p-type GaN layer are set in turn on first surface, described p-type electrode to be arranged in p-type GaN layer and to be connected with Si substrate by the first weld layer, described n-type electrode to be arranged on second surface and to be connected with Si substrate by the second weld layer, described Sapphire Substrate has alligatoring structure away from the one side of n-type GaN layer, described Si substrate and the first weld layer, reflector is respectively equipped with between second weld layer, described transition zone is arranged between reflector and the first weld layer.
Further, the material in described reflector is Ag or Al, and described transition zone is AlN transition zone.
Further, described alligatoring structure is the projection that surface has inverted trapezoidal, back taper or del.
Further, resilient coating is provided with between described Sapphire Substrate and n-type GaN layer.
Further, the length-width ratio of described flip LED chips is 1:2-3.
Further, be provided with separator between described quantum well MWQ layer and p-type GaN layer, described separator is SiO
2and Ti
3o
5the lamination alternately formed, the number of described lamination is 2-18.
The beneficial effects of the utility model are:
(1) utilize Sapphire Substrate, n-type GaN layer, quantum well MWQ layer, p-type GaN layer, Si substrate, weld layer, reflector, transition zone compound get photo structure, this structure can change light transmition direction, make to be greater than critical angle of incidence and at the light effusion chip surface of chip internal generation total reflection, originally the photon effusion chip surface that the active layer can not overflowing chip surface is sent, thus improve chip light-emitting efficiency;
(2) substrate made by the sapphire being provided with alligatoring structure, greatly can improve light extraction efficiency, prevents the refractive index difference due to semiconductor and air comparatively large and problem that total reflection that is that cause is serious.
Accompanying drawing explanation
Fig. 1 is the structure chart of the flip LED chips of the utility model embodiment.
Label declaration:
1, Sapphire Substrate; 11, alligatoring structure; 2, n-type GaN layer; 3, quantum well MWQ layer; 4, p-type GaN layer; 5, Si substrate; 61, the first weld layer; 62, the second weld layer; 7, reflector; 8, transition zone; 91, p-type electrode; 92, n-type electrode; 101, resilient coating; 102, separator.
Embodiment
By describing technology contents of the present utility model in detail, realized object and effect, accompanying drawing is coordinated to be explained below in conjunction with execution mode.
The design of the utility model most critical is: get the design of photo structure by the compound of Sapphire Substrate, n-type GaN layer, quantum well MWQ layer, p-type GaN layer, Si substrate, weld layer, reflector, transition zone, thus improves chip light-emitting efficiency.
Please refer to Fig. 1, flip LED chips of the present utility model, comprise Sapphire Substrate 1, n-type GaN layer 2, quantum well MWQ layer 3, p-type GaN layer 4, Si substrate 5, weld layer, reflector 7, transition zone 8 and Ohmic electrode, described n-type GaN layer 2, quantum well MWQ layer 3 and p-type GaN layer 4 are set in turn in Sapphire Substrate 1 respectively, described weld layer comprises the first weld layer 61 and the second weld layer 62, described Ohmic electrode comprises n-type electrode 92 and p-type electrode 91, described n-type GaN layer 2 comprises first surface and second surface away from the one side of Sapphire Substrate, described quantum well MWQ layer 3 and p-type GaN layer 4 are set in turn on first surface, described p-type electrode 91 to be arranged in p-type GaN layer 4 and to be connected with Si substrate 5 by the first weld layer 61, described n-type electrode 92 to be arranged on second surface and to be connected with Si substrate 5 by the second weld layer 62, described Sapphire Substrate 1 has alligatoring structure 11 away from the one side of n-type GaN layer 2, described Si substrate 5 and the first weld layer 61, reflector 7 is respectively equipped with between second weld layer 62, described transition zone 8 is arranged between reflector 7 and the first weld layer 61.
From foregoing description, the beneficial effects of the utility model are:
(1) utilize Sapphire Substrate, n-type GaN layer, quantum well MWQ layer, p-type GaN layer, Si substrate, weld layer, reflector, transition zone compound get photo structure, this structure can change light transmition direction, make to be greater than critical angle of incidence and at the light effusion chip surface of chip internal generation total reflection, originally the photon effusion chip surface that the active layer can not overflowing chip surface is sent, thus improve chip light-emitting efficiency;
(2) substrate made by the sapphire being provided with alligatoring structure, greatly can improve light extraction efficiency, prevents the refractive index difference due to semiconductor and air comparatively large and problem that total reflection that is that cause is serious.
Further, the material in described reflector 7 is Ag or Al, and described transition zone 8 is AlN transition zone.
Seen from the above description, the reflecting effect in the reflector of the present embodiment is better, can further improve the utilization ratio of light; Transition zone can in time by the heat diffusion that semiconductor produces, the useful life of the chip of prolongation.
Further, described alligatoring structure 11 is the projection that surface has inverted trapezoidal, back taper or del.
Seen from the above description, alligatoring structure can select the bulge-structure of simple inverted trapezoidal, back taper or del, and alligatoring structure to a certain degree can improve the power output of LED.
Further, resilient coating 101 is provided with between described Sapphire Substrate 1 and n-type GaN layer 2.
Seen from the above description, resilient coating can alleviate the stress of extension GaN material on substrate, thus improves luminous efficiency.
Further, the length-width ratio of described flip LED chips is 1:2-3.
Further, be provided with separator 102 between described quantum well MWQ layer 3 and p-type GaN layer 4, described separator is SiO
2and Ti
3o
5the lamination alternately formed, the number of described lamination is 2-18.
Seen from the above description, arranging of separator can improve light extraction efficiency further.
Please refer to Fig. 1, embodiment one of the present utility model is:
The flip LED chips of the present embodiment, comprise Sapphire Substrate 1, n-type GaN layer 2, quantum well MWQ layer 3, p-type GaN layer 4, Si substrate 5, weld layer, reflector 7, transition zone 8 and Ohmic electrode, described n-type GaN layer 2, quantum well MWQ layer 3 and p-type GaN layer 4 are set in turn in Sapphire Substrate 1 respectively, described weld layer comprises the first weld layer 61 and the second weld layer 62, described Ohmic electrode comprises n-type electrode 92 and p-type electrode 91, described n-type GaN layer 2 comprises first surface and second surface away from the one side of Sapphire Substrate, described quantum well MWQ layer 3 and p-type GaN layer 4 are set in turn on first surface, described p-type electrode 91 to be arranged in p-type GaN layer 4 and to be connected with Si substrate 5 by the first weld layer 61, described n-type electrode 92 to be arranged on second surface and to be connected with Si substrate 5 by the second weld layer 62, described Sapphire Substrate 1 has alligatoring structure 11 away from the one side of n-type GaN layer 2, described Si substrate 5 and the first weld layer 61, reflector 7 is respectively equipped with between second weld layer 62, described transition zone 8 is arranged between reflector 7 and the first weld layer 61.The material in described reflector 7 is Ag or Al, and described transition zone 8 is AlN transition zone.Described alligatoring structure 11 is the projection that surface has inverted trapezoidal, back taper or del.Resilient coating 101 is provided with between described Sapphire Substrate 1 and n-type GaN layer 2.The length-width ratio of described flip LED chips is 1:2-3.Be provided with separator 102 between described quantum well MWQ layer 3 and p-type GaN layer 4, described separator is SiO
2and Ti
3o
5the lamination alternately formed, the number of described lamination is 2-18.
In sum, the flip LED chips that the utility model provides has the beneficial effect of the power output that can improve chip light-emitting efficiency, light utilization ratio and LED.
The foregoing is only embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every equivalents utilizing the utility model specification and accompanying drawing content to do; or be directly or indirectly used in relevant technical field, be all in like manner included in scope of patent protection of the present utility model.
Claims (6)
1. a flip LED chips, it is characterized in that, comprise Sapphire Substrate, n-type GaN layer, quantum well MWQ layer, p-type GaN layer, Si substrate, weld layer, reflector, transition zone and Ohmic electrode, described n-type GaN layer, quantum well MWQ layer and p-type GaN layer are set in turn in Sapphire Substrate respectively, described weld layer comprises the first weld layer and the second weld layer, described Ohmic electrode comprises n-type electrode and p-type electrode, described n-type GaN layer comprises first surface and second surface away from the one side of Sapphire Substrate, described quantum well MWQ layer and p-type GaN layer are set in turn on first surface, described p-type electrode to be arranged in p-type GaN layer and to be connected with Si substrate by the first weld layer, described n-type electrode to be arranged on second surface and to be connected with Si substrate by the second weld layer, described Sapphire Substrate has alligatoring structure away from the one side of n-type GaN layer, described Si substrate and the first weld layer, reflector is respectively equipped with between second weld layer, described transition zone is arranged between reflector and the first weld layer.
2. flip LED chips according to claim 1, is characterized in that, the material in described reflector is Ag or Al, and described transition zone is AlN transition zone.
3. flip LED chips according to claim 1, is characterized in that, described alligatoring structure is the projection that surface has inverted trapezoidal, back taper or del.
4. flip LED chips according to claim 1, is characterized in that, is provided with resilient coating between described Sapphire Substrate and n-type GaN layer.
5. flip LED chips according to claim 1, is characterized in that, the length-width ratio of described flip LED chips is 1:2-3.
6. flip LED chips according to claim 1, is characterized in that, is provided with separator between described quantum well MWQ layer and p-type GaN layer, and described separator is SiO
2and Ti
3o
5the lamination alternately formed, the number of described lamination is 2-18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520219256.1U CN204577455U (en) | 2015-04-13 | 2015-04-13 | A kind of flip LED chips |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520219256.1U CN204577455U (en) | 2015-04-13 | 2015-04-13 | A kind of flip LED chips |
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| CN204577455U true CN204577455U (en) | 2015-08-19 |
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| CN201520219256.1U Expired - Fee Related CN204577455U (en) | 2015-04-13 | 2015-04-13 | A kind of flip LED chips |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086260A (en) * | 2016-08-17 | 2017-08-22 | 中山大学 | A kind of flip LED chips structure and preparation method thereof |
| US11784293B2 (en) | 2020-06-05 | 2023-10-10 | Au Optronics Corporation | Display panel and tiled display |
-
2015
- 2015-04-13 CN CN201520219256.1U patent/CN204577455U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086260A (en) * | 2016-08-17 | 2017-08-22 | 中山大学 | A kind of flip LED chips structure and preparation method thereof |
| US11784293B2 (en) | 2020-06-05 | 2023-10-10 | Au Optronics Corporation | Display panel and tiled display |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150819 Termination date: 20200413 |
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| CF01 | Termination of patent right due to non-payment of annual fee |