CN203521456U - Reflecting layer structure of flip-chip LED chip and flip-chip LED chip - Google Patents
Reflecting layer structure of flip-chip LED chip and flip-chip LED chip Download PDFInfo
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- CN203521456U CN203521456U CN201320549514.3U CN201320549514U CN203521456U CN 203521456 U CN203521456 U CN 203521456U CN 201320549514 U CN201320549514 U CN 201320549514U CN 203521456 U CN203521456 U CN 203521456U
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Abstract
The utility model relates to a reflecting layer structure of a flip-chip LED chip and a flip-chip LED chip. The reflecting layer structure of the flip-chip LED chip comprises a reflecting layer arranged below the P-type Ohmic contact layer, a transition layer is arranged between the reflecting layer and the P-type Ohmic contact layer, the reflecting layer is selected from a Ag reflecting layer or an Al reflecting layer, and an AlN layer serves as the transition layer. The adhesive force between the Ag reflecting layer and a semiconductor layer or between the Al reflecting layer and the semiconductor layer becomes stronger through the transmission layer, the upper surface of the reflecting layer can be made smoother, a better reflection effect can be achieved, and utilization efficiency of light is improved. The transmission layer is of high thermal conductivity, so that heat generated by a semiconductor can be radiated in time, and the service lifetime of the chip can be prolonged.
Description
Technical field
The utility model belongs to field of photoelectric technology, the dress dress LED chip that specifically relates to a kind of reflection layer structure of flip LED chips and contain this structure.
Background technology
Flip LED chips is compared with packed LED chip, flip LED chips has good heat sinking function and luminous efficiency, have the advantages such as low-voltage, high brightness, high reliability, high saturation current density, aspect of performance has larger advantage, has good development prospect.
Because the luminescent layer of flip LED is positioned at the centre of P type and n type semiconductor layer; the light part that luminescent layer sends penetrates downwards; but chip is solder side and opaque substrate below; in order effectively to utilize this part light; conventionally can plate one deck reflector in the bottom of chip, Al or Ag material be take as main in reflector.
Using Al or Ag material during as reflector, because the adhesive force of Al or Ag material and semiconductor layer is very poor, be difficult to be covered on halfbody layer when making, complex process cost is high, even after plating, its adhesion is not strong yet; In prior art, useful alundum (Al2O3) etc. is as the transition zone before silver-plated, but alundum (Al2O3) and semiconductor junction be the non-constant of bad and heat conductivility with joint efforts, LED can produce amount of heat when luminous, affects the life-span of LED chip, therefore cannot fundamentally solve the shortcoming of prior art.
Utility model content
In order to solve the problems of the technologies described above, the purpose of this utility model is to provide a kind of reflection layer structure of flip LED chips, Al or Ag material reflector can better be attached on semiconductor, and the heat of semiconductor light emitting generation is led away fast, extend the life-span of chip.
For achieving the above object, the utility model is to realize by following technical scheme:
The semi-conducting material that the aluminium nitride AlNYouⅢ A family element al HeⅤ A element N of family chemical combination forms, thermal conductivity is good, and thermal coefficient of expansion is little, it is good heat shock resistance material, also find, aluminium nitride and semi-conductive adhesion property are fine, and also very good with the adhesion property of silver or aluminium simultaneously.
Based on above-mentioned technology, the utility model is used for flip LED chips by aluminium nitride, transition zone as silver or aluminium reflector, a kind of reflection layer structure of flip LED chips is provided, the reflector that comprises the downside that is arranged at P type ohmic contact layer, between described reflector and P type ohmic contact layer, also there is no a transition zone, described reflector is selected from Ag reflector or Al reflector, and transition zone is selected from AlN transition zone.
The utility model also further provides a kind of flip LED chips, includes Sapphire Substrate; Be arranged at the n type semiconductor layer of Sapphire Substrate downside; Be arranged at the p type semiconductor layer of n type semiconductor layer downside; Be arranged at the P type ohmic contact layer of p type semiconductor layer downside; Be arranged at the reflector of the downside of P type ohmic contact layer, between described reflector and P type ohmic contact layer, also there is no AlN transition zone, described reflector is selected from Ag reflector or Al reflector.
Above-described flip LED chips, wherein, described semiconductor layer is selected from GaN semiconductor layer.Downside in reflector is also provided with a protective layer.
The beneficial effects of the utility model are: by transition zone is set, make Al or Ag reflector and semiconductor layer adhesive force stronger, that the upper surface in reflector can be done is more smooth, and reflecting effect is better, improve the utilization ratio of light; The thermal conductivity of transition zone is very good, the heat diffusion that can in time semiconductor be produced, the useful life of the chip of prolongation.
Accompanying drawing explanation
Fig. 1 is the structural representation of the flip LED chips of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the technical solution of the utility model is elaborated.
Shown in Fig. 1, the flip LED chips of the present embodiment includes Sapphire Substrate 1, be arranged at the N-GaN layer 2 of Sapphire Substrate downside, be arranged at luminescent layer 23, the P type ohmic contact layer 4 that is arranged at P-GaN layer downside, the argentum reflecting layer 6 that is arranged at the downside of P type ohmic contact layer, N-type ohmic contact layer 5, P type welding electrode 7 and N-type welding electrode 8 in the middle of P-GaN layer 3, N-GaN layer and the P-GaN layer of N-GaN layer downside.
Before P type ohmic contact layer downside is prepared argentum reflecting layer, first on P type ohmic contact layer, plate one deck aluminium nitride, as the transition zone 9 between P type ohmic contact layer and argentum reflecting layer, make the adhesion of argentum reflecting layer 6 and thermal conductivity all better.For better protection argentum reflecting layer, at the downside of argentum reflecting layer, be also provided with a protective layer 10.
Above embodiment is preferred embodiment of the present utility model; the utility model is not limited to above-described embodiment; for those of ordinary skills; the any apparent change of doing on the basis that does not deviate from the utility model know-why, all belongs to the protection range of design of the present utility model and claims.
Claims (4)
1. the reflection layer structure of a flip LED chips, the reflector that comprises the downside that is arranged at P type ohmic contact layer, it is characterized in that: between described reflector and P type ohmic contact layer, also there is no a transition zone, described reflector is selected from Ag reflector or Al reflector, and transition zone is selected from AlN transition zone.
2. a flip LED chips, includes Sapphire Substrate; Be arranged at the n type semiconductor layer of Sapphire Substrate downside; Be arranged at the p type semiconductor layer of n type semiconductor layer downside; Be arranged at the P type ohmic contact layer of p type semiconductor layer downside; The reflector that is arranged at the downside of P type ohmic contact layer, is characterized in that: between described reflector and P type ohmic contact layer, also there is no AlN transition zone, described reflector is selected from Ag reflector or Al reflector.
3. flip LED chips according to claim 2, is characterized in that: described semiconductor layer is selected from GaN semiconductor layer.
4. flip LED chips according to claim 2, is characterized in that: the downside in reflector is also provided with a protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320549514.3U CN203521456U (en) | 2013-09-05 | 2013-09-05 | Reflecting layer structure of flip-chip LED chip and flip-chip LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320549514.3U CN203521456U (en) | 2013-09-05 | 2013-09-05 | Reflecting layer structure of flip-chip LED chip and flip-chip LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203521456U true CN203521456U (en) | 2014-04-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320549514.3U Expired - Lifetime CN203521456U (en) | 2013-09-05 | 2013-09-05 | Reflecting layer structure of flip-chip LED chip and flip-chip LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203521456U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456859A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Reflecting layer structure of LED flip chip and LED flip chip |
-
2013
- 2013-09-05 CN CN201320549514.3U patent/CN203521456U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456859A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Reflecting layer structure of LED flip chip and LED flip chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANDONG JINGTAIXING PHOTOELECTRIC TECHNOLOGY CO., Free format text: FORMER OWNER: SHENZHEN ZHIXUNDA PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20140827 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518057 SHENZHEN, GUANGDONG PROVINCE TO: 271208 TAIAN, SHANDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20140827 Address after: 271208 Xintai Economic Development Zone, Shandong, Tai'an Patentee after: SHANDONG PROSPEROUS STAR OPTOELECTRONICS Co.,Ltd. Address before: 518057 B, B404-406 building, Shenzhen Research Institute, Shenzhen District, Nanshan District hi tech Zone, Guangdong, China Patentee before: SHENZHEN WISDOW REACHES INDUSTRY Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20140402 |
|
| CX01 | Expiry of patent term |