CN103456859A - Reflecting layer structure of LED flip chip and LED flip chip - Google Patents
Reflecting layer structure of LED flip chip and LED flip chip Download PDFInfo
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- CN103456859A CN103456859A CN201310399087XA CN201310399087A CN103456859A CN 103456859 A CN103456859 A CN 103456859A CN 201310399087X A CN201310399087X A CN 201310399087XA CN 201310399087 A CN201310399087 A CN 201310399087A CN 103456859 A CN103456859 A CN 103456859A
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Abstract
The invention relates to a reflecting layer structure of an LED flip chip and the LED flip chip with the reflecting layer structure. The reflecting layer structure of the LED flip chip comprises a reflecting layer arranged on the lower side of a P-type ohmic contact layer, wherein a transition layer is further arranged between the reflecting layer and the P-type ohmic contact layer, the reflecting layer is selected from an Ag reflecting layer or an Al reflecting layer, and the transition layer is selected from an AlN transition layer. Due to the fact that the transition layer is arranged, adhesive force between a semiconductor layer and the Al reflecting layer or the Ag reflecting layer can be higher, the upper surface of the reflecting layer can be processed to be smoother, the light-reflecting effect of the reflecting layer can be better, and utilization efficiency of light is improved; due to the fact that the heat conductivity of the transition layer is quite good, heat generated by semiconductors can be timely diffused, and the service life of the LED flip chip can be prolonged.
Description
Technical field
The invention belongs to field of photoelectric technology, the dress dress LED chip that specifically relates to a kind of reflection layer structure of flip LED chips and contain this structure.
Background technology
Flip LED chips is compared with packed LED chip, flip LED chips has heat sinking function and luminous efficiency preferably, have the advantages such as low-voltage, high brightness, high reliability, high saturation current density, aspect of performance has larger advantage, has good development prospect.
Because the luminescent layer of flip LED is positioned at the centre of P type and n type semiconductor layer; the light part that luminescent layer sends penetrates downwards; but below chip, be solder side and opaque substrate; in order effectively to utilize this part light; usually can plate one deck reflector in the bottom of chip, Al or Ag material be take as main in reflector.
Using Al or Ag material during as reflector, because the adhesive force of Al or Ag material and semiconductor layer is very poor, be difficult to it be covered on the halfbody layer when making, the complex process cost is high, even after plating, its adhesion is not strong yet; In prior art, useful alundum (Al2O3) etc. is as the transition zone before silver-plated, but alundum (Al2O3) and semiconductor junction be the non-constant of bad and heat conductivility with joint efforts, LED can produce amount of heat when luminous, affects the life-span of LED chip, therefore can't fundamentally solve the shortcoming of prior art.
Summary of the invention
In order to solve the problems of the technologies described above, the purpose of this invention is to provide a kind of reflection layer structure of flip LED chips, Al or Ag material reflector can better be attached on semiconductor, and the heat of semiconductor light emitting generation is led away fast, extend the life-span of chip.
For achieving the above object, the present invention is achieved by the following technical solutions:
The semi-conducting material that aluminium nitride AlN is formed by III A family's element al and the element N of V A family chemical combination, thermal conductivity is good, and thermal coefficient of expansion is little, it is good heat shock resistance material, also find, aluminium nitride and semi-conductive adhesion property are fine, and also very good with the adhesion property of silver or aluminium simultaneously.
Based on above-mentioned technology, the present invention is used for flip LED chips by aluminium nitride, transition zone as silver or aluminium reflector, a kind of reflection layer structure of flip LED chips is provided, the reflector that comprises the downside that is arranged at P type ohmic contact layer, also there is no a transition zone between described reflector and P type ohmic contact layer, described reflector is selected from Ag reflector or Al reflector, and transition zone is selected from the AlN transition zone.
The present invention also further provides a kind of flip LED chips, includes Sapphire Substrate; Be arranged at the n type semiconductor layer of Sapphire Substrate downside; Be arranged at the p type semiconductor layer of n type semiconductor layer downside; Be arranged at the P type ohmic contact layer of p type semiconductor layer downside; Be arranged at the reflector of the downside of P type ohmic contact layer, between described reflector and P type ohmic contact layer, also there is no the AlN transition zone, described reflector is selected from Ag reflector or Al reflector.
Above-described flip LED chips, wherein, described semiconductor layer is selected from the GaN semiconductor layer.Downside in reflector also is provided with a protective layer.
Beneficial effect of the present invention is: by transition zone is set, make Al or Ag reflector and semiconductor layer adhesive force stronger, that the upper surface in reflector can be done is more smooth, and reflecting effect is better, improves the utilization ratio of light; The thermal conductivity of transition zone is very good, the heat diffusion that can in time semiconductor be produced, the useful life of the chip of prolongation.
The accompanying drawing explanation
Fig. 1 is the structural representation of the flip LED chips of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, technical scheme of the present invention is elaborated.
Shown in Fig. 1, the flip LED chips of the present embodiment includes Sapphire Substrate 1, be arranged at the N-GaN layer 2 of Sapphire Substrate downside, be arranged at luminescent layer 23, the P type ohmic contact layer 4 that is arranged at P-GaN layer downside, the argentum reflecting layer 6 that is arranged at the downside of P type ohmic contact layer, N-type ohmic contact layer 5, P type welding electrode 7 and N-type welding electrode 8 in the middle of P-GaN layer 3, N-GaN layer and the P-GaN layer of N-GaN layer downside.
Before P type ohmic contact layer downside prepares argentum reflecting layer, first plating one deck aluminium nitride on P type ohmic contact layer, as the transition zone 9 between P type ohmic contact layer and argentum reflecting layer, make the adhesion of argentum reflecting layer 6 and thermal conductivity all better.For better protection argentum reflecting layer, at the downside of argentum reflecting layer, also be provided with a protective layer 10.
Above embodiment is the preferred embodiments of the present invention; the invention is not restricted to above-described embodiment; for those of ordinary skills; the any apparent change of doing on the basis that does not deviate from the technology of the present invention principle, all belong to the protection range of design of the present invention and claims.
Claims (4)
1. the reflection layer structure of a flip LED chips, the reflector that comprises the downside that is arranged at P type ohmic contact layer, it is characterized in that: also there is no a transition zone between described reflector and P type ohmic contact layer, described reflector is selected from Ag reflector or Al reflector, and transition zone is selected from the AlN transition zone.
2. a flip LED chips, include Sapphire Substrate; Be arranged at the n type semiconductor layer of Sapphire Substrate downside; Be arranged at the p type semiconductor layer of n type semiconductor layer downside; Be arranged at the P type ohmic contact layer of p type semiconductor layer downside; Be arranged at the reflector of the downside of P type ohmic contact layer, it is characterized in that: also there is no the AlN transition zone between described reflector and P type ohmic contact layer, described reflector is selected from Ag reflector or Al reflector.
3. flip LED chips according to claim 2, it is characterized in that: described semiconductor layer is selected from the GaN semiconductor layer.
4. flip LED chips according to claim 2, it is characterized in that: the downside in reflector also is provided with a protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310399087XA CN103456859A (en) | 2013-09-05 | 2013-09-05 | Reflecting layer structure of LED flip chip and LED flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310399087XA CN103456859A (en) | 2013-09-05 | 2013-09-05 | Reflecting layer structure of LED flip chip and LED flip chip |
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| Publication Number | Publication Date |
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| CN103456859A true CN103456859A (en) | 2013-12-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310399087XA Pending CN103456859A (en) | 2013-09-05 | 2013-09-05 | Reflecting layer structure of LED flip chip and LED flip chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524514A (en) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000286445A (en) * | 1999-03-31 | 2000-10-13 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor light emitting element |
| US20070138487A1 (en) * | 2005-12-01 | 2007-06-21 | Yoshiake Watanabe | Semiconductor light emitting device and method of manufacturing the same |
| CN102439741A (en) * | 2009-11-06 | 2012-05-02 | 旭明光电股份有限公司 | Light emitting diode device |
| CN102723415A (en) * | 2012-06-25 | 2012-10-10 | 钟伟荣 | Inversion high voltage alternating/direct current light-emitting diode and manufacture method thereof |
| CN203521456U (en) * | 2013-09-05 | 2014-04-02 | 深圳市智讯达光电科技有限公司 | Reflecting layer structure of flip-chip LED chip and flip-chip LED chip |
-
2013
- 2013-09-05 CN CN201310399087XA patent/CN103456859A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000286445A (en) * | 1999-03-31 | 2000-10-13 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor light emitting element |
| US20070138487A1 (en) * | 2005-12-01 | 2007-06-21 | Yoshiake Watanabe | Semiconductor light emitting device and method of manufacturing the same |
| CN102439741A (en) * | 2009-11-06 | 2012-05-02 | 旭明光电股份有限公司 | Light emitting diode device |
| CN102723415A (en) * | 2012-06-25 | 2012-10-10 | 钟伟荣 | Inversion high voltage alternating/direct current light-emitting diode and manufacture method thereof |
| CN203521456U (en) * | 2013-09-05 | 2014-04-02 | 深圳市智讯达光电科技有限公司 | Reflecting layer structure of flip-chip LED chip and flip-chip LED chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524514A (en) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
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Owner name: SHANDONG JINGTAIXING PHOTOELECTRIC TECHNOLOGY CO., Free format text: FORMER OWNER: SHENZHEN ZHIXUNDA PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20141010 |
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Effective date of registration: 20141010 Address after: 271208 Xintai Economic Development Zone, Shandong, Tai'an Applicant after: SHENZHEN WISDOW REACHES INDUSTRY CO., LTD. Address before: 518057 B, B404-406 building, Shenzhen Research Institute, Shenzhen District, Nanshan District hi tech Zone, Guangdong, China Applicant before: Shenzhen Zhixunda Photoelectric Technology Co., Ltd. |
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Application publication date: 20131218 |