CN102723415A - Inversion high voltage alternating/direct current light-emitting diode and manufacture method thereof - Google Patents
Inversion high voltage alternating/direct current light-emitting diode and manufacture method thereof Download PDFInfo
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- CN102723415A CN102723415A CN201210211799XA CN201210211799A CN102723415A CN 102723415 A CN102723415 A CN 102723415A CN 201210211799X A CN201210211799X A CN 201210211799XA CN 201210211799 A CN201210211799 A CN 201210211799A CN 102723415 A CN102723415 A CN 102723415A
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Abstract
The invention provides an inversion high voltage alternating/direct current light-emitting diode and a manufacture method thereof. The light-emitting diode comprises a routing electrode, a sapphire substrate, an N-GaN layer, a light-emitting layer, a P-gAn layer, a current diffusion layer, an insulating layer, a metal reflecting layer, an insulation flat layer, a bonding metal medium layer and a support substrate from top to bottom. Mat surfaces formed by plasma dry etching are arranged on two sides of the sapphire substrate, a through hole formed by laser drilling is arranged in the sapphire substrate, and metal is filled in the through hole to enable an electrode on the N-GaN layer and the routing electrode to be connected. The light-emitting diode enables a wafer to be inversely bonded on a substrate of a radiating support, a positive electrode and a negative electrode are respectively located on the upper side and the lower side of a chip, each light-emitting unit on the chip forms an inversed trapezoidal structure due to inversion, each light-emitting unit is wrapped by the reflecting layer to form a structure with an upward opening and effects of reflecting cups, simultaneously shielding of electrodes on light-emitting directions is reduced, only the negative electrode is arranged above the chip, and layout design of the light-emitting units of the high voltage light-emitting diode can be convenient.
Description
Technical field
The present invention relates to led technology, relate in particular to a kind of flip chip type high pressure AC/DC Light-emitting Diode And Its Making Method.
Background technology
For the design of high-capacity LED, each big factory is many at present is main with single low voltage DC LED of large scale, and way has two, one to be the traditional water flat structure, and another then is a vertical conductive structure.With regard to first kind of way, its processing procedure and general small-size grains much at one, in other words; Both cross-section structures are the same, but are different from small-size grains, and high-capacity LED usually needs to operate under the big electric current; A little unbalanced P, N electrode design; The capital causes serious electric current clustering effect (Current crowding), and its result also can damage the reliability (Reliability) of wafer except making the LED wafer not reach the brightness of design.
Certainly, as far as upstream chip producer/chip factory, this practice process-compatible property (Compatibility) height; Need not to buy more again new-type or special board, on the other hand, for down-stream system factory; The collocation of periphery, like design of power supply aspect or the like, difference is also little.But as previously mentioned, on large scale LED, will electric current evenly be spread not is the part nothing the matter, the bigger more difficulty of size; Simultaneously, because the relation of geometric effect, the light extraction efficiency of large scale LED is reduced size low often.
Second kind of way is many than first kind of complicacy; Because present commercial blue-ray LED nearly all is to grow up on sapphire substrate, change vertical conductive structure into, must be first and conductive board do after the joint; Again nonconducting sapphire substrate is removed, accomplish successive process again; With regard to CURRENT DISTRIBUTION, owing in vertical stratification, more need not consider cross conduction, so the more traditional level structure of electric current uniformity is good; In addition, with regard to the basic physical principle, the good material of conductivity also has the speciality of high heat conduction, by the displacement substrate, has also improved heat radiation simultaneously, has reduced PN and has connect surface temperature, has just improved luminous efficiency thus indirectly.But the maximum shortcoming of this kind way is, because process complexity improves, causes yield low than the traditional water flat structure, and cost of manufacture exceeds much.
Brilliant first photoelectricity has taken the lead in proposing the solution of HVDC light-emitting diode (HV DC LED) as high-capacity LED in the whole world; Its basic framework is identical with high-voltage alternating light-emitting diode (HV AC LED), is chip area is divided into a plurality of cell be in series afterwards.Its characteristic is, wafer can determine its cell quantity and size etc. to be equal to the customized service of accomplishing according to the demand of the voltage of different inputs.Owing to can optimize, therefore can access preferable CURRENT DISTRIBUTION, and then improve luminous efficiency to every cell.
As everyone knows, hide many drawbacks by the LED product of DC driven.They need use with rectifier in the lump, and its life-span has only 20,000 hours, but the life-span of the LED product of dc powered reaches 5～100,000 hours.Therefore, the LED product " throughout one's life " of DC driven just need repeatedly be changed rectifier, if be applied to must bring inconvenience on the priming illumination device.Relative with it, the high-voltage alternating light-emitting diode is one type of integrated LED product of various treatment technologies, and it comprises multiple device or kernel, need not extra transformer, rectifier or drive circuit, and the alternating current of AC network just can directly drive it.This makes the LED product need not transformer just can directly apply to household and office's ac electric apparatus plug (100～110 volts/220～230 volts), not only significantly reduces circuit cost, has also avoided the energy consumption of losing in the power conversion process.But the light extraction efficiency of this baroluminescence diode and heat dispersion are still waiting to promote.
Summary of the invention
The purpose of this invention is to provide a kind of flip chip type high pressure AC/DC Light-emitting Diode And Its Making Method, with light extraction efficiency and the improvement heat radiation that improves light-emitting diode.
The technical scheme that the present invention is adopted for its technical problem of solution is,
A kind of flip chip type high pressure AC/DC light-emitting diode comprises the routing electrode, Sapphire Substrate, N-GaN layer, luminescent layer from top to bottom; The P-GaN layer, current-diffusion layer, insulating barrier, metallic reflector; The insulation flatness layer, nation's deposit belongs to interlayer, and supporting substrate is characterized in that; The Sapphire Substrate both sides have the matsurface that the plasma dry etching forms, and have the through hole that the laser borehole forms in the Sapphire Substrate, are filled with metal in this through hole, and the electrode on the N-GaN layer is connected with the routing electrode;
Said current-diffusion layer can be metal species such as nickel, silver, platinum, gold and alloy thereof, or oxidized metal class such as tin indium oxide, zinc oxide, aluminum zinc oxide, indium zinc oxide;
Said insulating barrier can be a silica, silicon nitride, silicon oxynitride, aluminium oxide, aluminium nitride, titanium oxide and the Bragg reflecting layer of being made up of different transparent dielectric layer;
Said metallic reflector can be an aluminium, and silver or aluminium silver alloy, its thickness are 0.3～3 μ m;
Said supporting substrate can be metal or silicon, and its thickness is 80～150 μ m.
The manufacture method of above-mentioned flip chip type high pressure AC/DC light-emitting diode may further comprise the steps:
1) forms first matsurface through the plasma dry etching in the front of Sapphire Substrate;
2), form chip at first matsurface of substrate outwards grow successively N-GaN layer, luminescent layer, P-GaN layer;
3) on chip, form some independently luminescence units, and the vapor deposition current-diffusion layer forms ohmic contact on the P-GaN layer, form PN junction isolation protective layer at each luminescence unit sidewall;
4) evaporation metal couples together each luminescence unit on chip, and electrode evaporation forms ohmic contact on the N-GaN layer;
5), make each luminescence unit form the structure of reflector effect at wafer frontside vapor deposition insulating barrier and metallic reflector;
6) utilize the mode of rotary coating, form an insulation flatness layer, increase the fixed bonding area of nation at crystal column surface;
7) belonging to interlayer at wafer frontside vapor deposition nation deposit also contacts with the positive pole of one of them luminescence unit;
8) nation decides supporting substrate;
9) with the Sapphire Substrate mechanical lapping of wafer rear to certain thickness;
10) on the Sapphire Substrate back side after grinding attenuate, form second matsurface with the plasma dry etching;
11) electrode from laser borehole on the back side of Sapphire Substrate to the N-GaN layer;
12) laser formed through hole on Sapphire Substrate is made electrically conducting up and down with in addition backfill of metal;
13) vapor deposition routing electrode above the backfill through hole at last.
In the step 9), that Sapphire Substrate mechanical lapping to 10～100 μ m are thick.
In the step 11), Sapphire Substrate laser borehole aperture is 10～50 μ m, and hole depth is 15～105 μ m.
In the step 12), with laser on Sapphire Substrate formed through hole with metal in addition the mode of backfill can be to electroplate or chemical plating.
The invention has the advantages that wafer upside-down mounting nation is fixed on the good substrate of a heat radiation, and positive and negative electrode lays respectively at the chip upper and lower sides; Each luminescence unit forms an inverted trapezoidal structure because of upside-down mounting on the chip; And, form the structure that upward opening has the reflector effect by reflecting layer covers, can reduce covering of electrode pair light direction simultaneously; This structure can make things convenient for the luminescence unit layout designs of baroluminescence diode greatly because the chip top has only negative electrode.
Description of drawings
Fig. 1 is the structural representation that forms first matsurface through the plasma dry etching in the front of Sapphire Substrate;
Fig. 2 is the structural representation behind the main luminous required epitaxial loayer of substrate face growth of roughening;
Fig. 3 forms several independently luminescence units on chip, and the vapor deposition current-diffusion layer forms ohmic contact on the P-GaN layer, the structural representation after each luminescence unit sidewall forms PN junction isolation protective layer;
Fig. 4 couples together each luminescence unit at the wafer frontside evaporation metal, and the structural representation after electrode evaporation on the N-GaN layer forms ohmic contact;
Fig. 5 is at wafer frontside vapor deposition insulating barrier and metallic reflector, makes each luminescence unit form the structural representation of reflector effect;
Fig. 6 is the structural representation after crystal column surface forms an insulation flatness layer;
Fig. 7 be wafer frontside vapor deposition nation deposit belong to interlayer and with structural representation after the positive pole of one of them luminescence unit contacts;
Fig. 8 is the structural representation after nation decides supporting substrate;
Fig. 9 is the structural representation after the Sapphire Substrate surface after grinding attenuate forms second matsurface;
Figure 10 be with laser at formed through hole on the Sapphire Substrate with the metal structural representation after the backfill in addition;
Figure 11 is the structural representation after vapor deposition routing electrode above the backfill through hole is accomplished flip chip type high pressure AC/DC light-emitting diode.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect and be easy to understand and understand, below in conjunction with diagram and specific embodiment, further set forth the present invention.
Flip chip type high pressure AC/DC light-emitting diode such as Figure 11 that the present invention proposes, this light-emitting diode comprises the routing electrode from top to bottom, Sapphire Substrate 1, N-GaN layer 2; Luminescent layer 3, P-GaN layer 4, current-diffusion layer 5, insulating barrier 6; Metallic reflector, the insulation flatness layer, nation's deposit belongs to interlayer; Supporting substrate is characterized in that, the Sapphire Substrate both sides have the matsurface that the plasma dry etching forms; Have the through hole that the laser borehole forms in the Sapphire Substrate, be filled with metal in this through hole, the electrode on the N-GaN layer is connected with the routing electrode
Fig. 1 shows according to the first embodiment of the present invention, on Sapphire Substrate 1, forms first matsurface through the plasma dry etching in the front of Sapphire Substrate.
Fig. 2 shows according to the first embodiment of the present invention, at Sapphire Substrate 1 positive N-GaN layer 2, luminescent layer 3, the P-GaN layer 4 of outwards growing main successively of roughening.
Fig. 3 shows according to the first embodiment of the present invention; The semiconductor technology that utilization is known; On chip, form several independently luminescence units, and vapor deposition current-diffusion layer 5 forms ohmic contact on P-GaN layer 4, form PN junction isolation layer 6 at each luminescence unit sidewall; Current-diffusion layer 5 can be metal species such as nickel, silver, platinum, gold, and the alloy of above metal, or oxidized metal class such as tin indium oxide (ITO), zinc oxide (ZnO), aluminum zinc oxide (AZO), indium zinc oxide (IZO).
Fig. 4 shows to utilize the semiconductor technology of knowing according to the first embodiment of the present invention that evaporation metal 71 couples together each luminescence unit with electrode 72, and electrode evaporation forms ohmic contact on the N-GaN layer;
Fig. 5 shows according to the first embodiment of the present invention, at wafer frontside vapor deposition insulating barrier 8 and metallic reflector 9, makes each luminescence unit form the structure of reflector effect;
Fig. 6 shows according to the first embodiment of the present invention, utilizes the mode of rotary coating, forms an insulation flatness layer 10 at crystal column surface, increases the fixed bonding area of nation;
Fig. 7 shows according to the first embodiment of the present invention, belongs to interlayer 11 at wafer frontside vapor deposition nation deposit and also contacts with the positive pole of one of them luminescence unit;
Fig. 8 shows that nation decides supporting substrate 12 according to the first embodiment of the present invention;
Fig. 9 shows according to the first embodiment of the present invention, and the Sapphire Substrate mechanical lapping of wafer rear to certain thickness, and on the Sapphire Substrate back side after grinding attenuate, is formed second matsurface with the plasma dry etching;
Figure 10 shows according to the first embodiment of the present invention, the electrode 72 from laser borehole on the Sapphire Substrate back side to the N-GaN layer; Then laser formed through hole on Sapphire Substrate is made electrically conducting up and down with in addition backfill of metal 73;
Figure 11 shows that according to the first embodiment of the present invention vapor deposition routing electrode 74 is accomplished flip chip type high pressure AC/DC light-emitting diode above the backfill through hole.
Below explanation according to a second embodiment of the present invention and the difference of first embodiment be that the laser borehole is to implement from the front of Sapphire Substrate, and utilize to electroplate or mode this hole of backfill before nation decides supporting substrate of chemical plating.
The flip chip type baroluminescence diode of accomplishing according to embodiments of the invention has high heat radiation nation and decide substrate reduction thermal resistance; Its principal character is that positive and negative electrode lays respectively at the chip upper and lower sides; Each luminescence unit forms an inverted trapezoidal structure because of upside-down mounting on the chip; And, form the structure that upward opening has the reflector effect by reflecting layer covers, can reduce covering of electrode pair light direction simultaneously; This structure can make things convenient for the luminescence unit layout designs of high pressure AC/DC light-emitting diode greatly because the chip top has only negative electrode.
Use embodiments of the invention, light-emitting area increases by 10～20%, and thermal resistance is less than 1/3 of same size formal dress structure chip, and brightness improves more than 30%.
More than show and described basic principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand; The present invention is not restricted to the described embodiments; That describes in the foregoing description and the specification just explains principle of the present invention; The present invention also has various changes and modifications under the prerequisite that does not break away from spirit and scope of the invention, and these variations and improvement all fall in the scope of the invention that requires protection.The present invention requires protection range to be defined by appending claims and equivalent thereof.
Claims (9)
1. a flip chip type high pressure AC/DC light-emitting diode comprises the routing electrode, Sapphire Substrate, N-GaN layer, luminescent layer from top to bottom; The P-GaN layer, current-diffusion layer, insulating barrier, metallic reflector; The insulation flatness layer, nation's deposit belongs to interlayer, and supporting substrate is characterized in that; The Sapphire Substrate both sides have the matsurface that the plasma dry etching forms, and have the through hole that the laser borehole forms in the Sapphire Substrate, are filled with metal in this through hole, and the electrode on the N-GaN layer is connected with the routing electrode.
2. a kind of flip chip type high pressure AC/DC light-emitting diode according to claim 1 is characterized in that said current-diffusion layer can be a nickel, silver, platinum, gold and alloy thereof, or tin indium oxide, zinc oxide, aluminum zinc oxide, indium zinc oxide.
3. a kind of flip chip type high pressure AC/DC light-emitting diode according to claim 1 is characterized in that said insulating barrier can be a silica; Silicon nitride, silicon oxynitride, aluminium oxide; Aluminium nitride, titanium oxide and the Bragg reflecting layer of forming by different transparent dielectric layer.
4. a kind of flip chip type high pressure AC/DC light-emitting diode according to claim 1 is characterized in that said metallic reflector can be an aluminium, and silver or aluminium silver alloy, its thickness are 0.3～3 μ m.
5. a kind of flip chip type high pressure AC/DC light-emitting diode according to claim 1 is characterized in that said supporting substrate can be metal or silicon, and its thickness is 80～150 μ m.
6. the manufacture method of a flip chip type high pressure AC/DC light-emitting diode is characterized in that, may further comprise the steps:
1) forms first matsurface through the plasma dry etching in the front of Sapphire Substrate;
2), form chip at first matsurface of substrate outwards grow successively N-GaN layer, luminescent layer, P-GaN layer;
3) on chip, form some independently luminescence units, and the vapor deposition current-diffusion layer forms ohmic contact on the P-GaN layer, form PN junction isolation protective layer at each luminescence unit sidewall;
4) evaporation metal couples together each luminescence unit on chip, and electrode evaporation forms ohmic contact on the N-GaN layer;
5), make each luminescence unit form the structure of reflector effect at wafer frontside vapor deposition insulating barrier and metallic reflector;
6) utilize the mode of rotary coating, form an insulation flatness layer, increase the fixed bonding area of nation at crystal column surface;
7) belonging to interlayer at wafer frontside vapor deposition nation deposit also contacts with the positive pole of one of them luminescence unit;
8) nation decides supporting substrate;
9) with the Sapphire Substrate mechanical lapping of wafer rear to certain thickness;
10) on the Sapphire Substrate back side after grinding attenuate, form second matsurface with the plasma dry etching;
11) electrode from laser borehole on the back side of Sapphire Substrate to the N-GaN layer;
12) laser formed through hole on Sapphire Substrate is made electrically conducting up and down with in addition backfill of metal;
13) vapor deposition routing electrode above the backfill through hole at last.
7. the manufacture method of a kind of flip chip type high pressure AC/DC light-emitting diode according to claim 6 is characterized in that, and is in the step 9), that Sapphire Substrate mechanical lapping to 10～100 μ m are thick.
8. the manufacture method of a kind of flip chip type high pressure AC/DC light-emitting diode according to claim 6 is characterized in that, in the step 11), Sapphire Substrate laser borehole aperture is 10～50 μ m, and hole depth is 15～105 μ m.
9. the manufacture method of a kind of flip chip type high pressure AC/DC light-emitting diode according to claim 6 is characterized in that, in the step 12), with laser on Sapphire Substrate formed through hole with metal in addition the mode of backfill can be to electroplate or chemical plating.
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| CN103456859A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Reflecting layer structure of LED flip chip and LED flip chip |
| CN103996775A (en) * | 2013-02-18 | 2014-08-20 | 丰田合成株式会社 | Group-iii nitride semiconductor light-emitting element and manufacturing method therefor |
| CN104979441A (en) * | 2014-04-02 | 2015-10-14 | 四川新力光源股份有限公司 | LED chip, manufacturing method thereof, and LED display device with same |
| CN105702821A (en) * | 2016-03-29 | 2016-06-22 | 苏州晶湛半导体有限公司 | Semiconductor light-emitting device and manufacturing method thereof |
| CN106910758A (en) * | 2013-01-09 | 2017-06-30 | 新世纪光电股份有限公司 | Light-emitting device |
| CN106935698A (en) * | 2013-04-18 | 2017-07-07 | 亿光电子工业股份有限公司 | Light-emitting diode assembly |
| CN109585618A (en) * | 2018-11-15 | 2019-04-05 | 泉州三安半导体科技有限公司 | A kind of high pressure light-emitting diode chip and preparation method |
| CN110768106A (en) * | 2018-07-26 | 2020-02-07 | 山东华光光电子股份有限公司 | Laser diode preparation method |
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| CN106910758A (en) * | 2013-01-09 | 2017-06-30 | 新世纪光电股份有限公司 | Light-emitting device |
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| CN104979441A (en) * | 2014-04-02 | 2015-10-14 | 四川新力光源股份有限公司 | LED chip, manufacturing method thereof, and LED display device with same |
| CN105702821A (en) * | 2016-03-29 | 2016-06-22 | 苏州晶湛半导体有限公司 | Semiconductor light-emitting device and manufacturing method thereof |
| CN110768106A (en) * | 2018-07-26 | 2020-02-07 | 山东华光光电子股份有限公司 | Laser diode preparation method |
| CN109585618A (en) * | 2018-11-15 | 2019-04-05 | 泉州三安半导体科技有限公司 | A kind of high pressure light-emitting diode chip and preparation method |
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Application publication date: 20121010 |