CN203521454U - Ohmic contact electrode structure of flip-chip LED chip and flip-chip LED chip - Google Patents
Ohmic contact electrode structure of flip-chip LED chip and flip-chip LED chip Download PDFInfo
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- CN203521454U CN203521454U CN201320550892.3U CN201320550892U CN203521454U CN 203521454 U CN203521454 U CN 203521454U CN 201320550892 U CN201320550892 U CN 201320550892U CN 203521454 U CN203521454 U CN 203521454U
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Abstract
The utility model discloses an Ohmic contact electrode structure of a flip-chip LED chip and the flip-chip LED chip. In the Ohmic contact electrode structure of the flip-chip LED chip, the chip comprises a sapphire substrate, an N-type semiconductor layer arranged below the sapphire substrate and a P-type semiconductor layer arranged below the N-type semiconductor layer, a P-type Ohmic contact electrode layer is covered on the lower side of the P-type semiconductor layer, a long strip groove is arranged on the P-type semiconductor layer and the P-type Ohmic contact electrode layer, the groove extends from the bottom surface of the P-type Ohmic contact electrode layer to the N-type semiconductor layer, and a long strip N-type Ohmic contact electrode arranged along the groove is arranged at the portion, inside the groove, on the lower side of the N-type semiconductor layer. By employing the long strip Ohmic contact electrode, compared with eutectic soldering, the cost of tin soldering packaging for the flip-clip LED chip is lower, the current is uniformly distributed between a P-type semiconductor and an N-type semiconductor of the flip-chip LED chip, and luminescence efficiency of the chip is improved.
Description
Technical field
The utility model belongs to field of photoelectric technology, the flip LED chips that specifically relates to a kind of ohmic contact electrode structure of flip LED chips and contain this structure.
Background technology
Flip LED chips is compared with packed LED chip, flip LED chips has good heat sinking function and luminous efficiency, have the advantages such as low-voltage, high brightness, high reliability, high saturation current density, aspect of performance has larger advantage, has good development prospect.
At present, first the encapsulation of flip LED chips prepares the flip LED chips with applicable eutectic welding, prepares the silicon base plate of corresponding size simultaneously, and makes the golden conductive layer of eutectic welding electrode thereon and draw conductive layer (ultrasonic wave gold ball bonding point).Then, utilize eutectic welding equipment that flip LED chips and silicon base plate is welded together.Different according to heat sink base plate, the common upside-down method of hull-section construction that has two kinds of heat sink base plates in the market: the one, utilize eutectic welding equipment, flip LED chips and silicon base plate are welded together, this is called silicon base plate upside-down method of hull-section construction; A kind of is ceramic bottom board upside-down method of hull-section construction, preparation has the LED chip of applicable eutectic welding electrode structure and large lighting area, and make eutectic welding conductive layer and draw conductive layer at ceramic bottom board, utilize eutectic welding equipment that flip LED chips and ceramic bottom board are welded together.
Because existing method for packing is all to adopt eutectic welding, eutectic welding is higher to welding operation requirements, and eutectic welding equipment is expensive, moving in up to ten million units, restricted the development of flip LED chips, make the cost of manufacture of flip LED chips high, be difficult to generally apply, because a little the application's research is by ashbury metal welding application
To flip LED chips, ashbury metal welding is a kind of welding that electronic product is relatively more conventional, can greatly fall end cost.
But existing flip LED chips is directly to carry out ashbury metal welding, mainly there is following technical problem: because the N-type Ohm contact electrode of existing flip LED chips is all to adopt several Spot electrodes that counterbore mode is made to form, the solder side of each electrode is very little of to be applicable to eutectic welding, and LED chip very light in weight, cannot effectively carry out soldering; Each N-type Ohm contact electrode is electrode independently mutually, cannot be to connecting between each electrode, and unified being connected on welding electrode; N-type Ohm contact electrode is point-like, and the spacing of each electrode and P type metal electrode not etc., does not cause the CURRENT DISTRIBUTION on N type semiconductor inhomogeneous, affects luminous efficiency.
Utility model content
The technical problem existing for solving present technology, the purpose of this utility model is that the ohmic electrode structure in present technology is improved, provide a kind of and can weld for ashbury metal, the N-type ohmic contact electrode structure of the uniform flip LED chips of CURRENT DISTRIBUTION on N type semiconductor, make the cost of flip LED chips lower, luminous efficiency is higher.
For achieving the above object, the utility model is by adopting following technical scheme to realize:
Construct a kind of ohmic contact electrode structure of flip LED chips, chip comprises Sapphire Substrate, be arranged on the n type semiconductor layer and the p type semiconductor layer that is placed in n type semiconductor layer downside of Sapphire Substrate downside, wherein p type semiconductor layer downside is coated with P type Ohm contact electrode layer, on p type semiconductor layer and P type Ohm contact electrode layer, be provided with the groove of strip, groove extends to n type semiconductor layer from the bottom surface of P type Ohm contact electrode layer, the part of the downside of n type semiconductor layer in groove is provided with N-type Ohm contact electrode, N-type Ohm contact electrode growth bar shaped distributes along groove.By above structure, present point-like Ohm contact electrode is modified into the Ohm contact electrode of strip, meets the requirement of ashbury metal welding.
In above-described structure, further, be provided with at least one extension in described groove, the width of extension is wider than other parts, and N-type Ohm contact electrode is provided with N-type pad, is positioned at extension, and N-type pad is for being connected with N-type electrode.Described N-type Ohm contact electrode is identical with the shape of groove, and N-type Ohm contact electrode and groove are respectively one to three, are parallel to each other and equidistantly arrange.
Further again, described N-type Ohm contact electrode is two, and same one end of two N-type Ohm contact electrodes is connected into U-shaped shape, and N-type pad is arranged in the middle of the bottom of U-shaped shape.
In above-described structure, further, described P type Ohm contact electrode layer downside is provided with at least one metal electrode, and metal electrode becomes parallel arrangement with N-type Ohm contact electrode.
Wherein, described metal electrode is 2～4, mutually alternately arranges with N-type Ohm contact electrode.Described P type Ohm contact electrode layer downside is also provided with P type pad, and each metal electrode is connected conducting with P type pad, and P type pad is for being connected with P type electrode.
According to above ohmic contact electrode structure, construct a kind of flip LED chips that contains above Ohm contact electrode, comprise Sapphire Substrate; N type semiconductor layer, be arranged on Sapphire Substrate downside; P type semiconductor layer, be placed in n type semiconductor layer downside, between n type semiconductor layer and p type semiconductor layer, be provided with quantum well layer, luminous after energising; P type Ohm contact electrode layer, is arranged on p type semiconductor layer downside, is provided with metal electrode on it, and metal electrode is connected with P type electrode; N-type Ohm contact electrode, is arranged at n type semiconductor layer downside, is connected with N-type electrode on it;
Wherein, described p type semiconductor layer and P type Ohm contact electrode layer are provided with the groove of a strip, groove extends to n type semiconductor layer from the bottom surface of P type Ohm contact electrode layer, the part of the downside of n type semiconductor layer in groove is provided with the N-type Ohm contact electrode identical with the shape of groove, N-type Ohm contact electrode growth bar shaped distributes along groove, N-type Ohm contact electrode and groove are respectively one to three, described P type Ohm contact electrode layer downside is provided with at least one metal electrode, and metal electrode becomes parallel arrangement with N-type Ohm contact electrode.
In above-described chip, further, be provided with at least one extension in described groove, the width of extension is wider than other parts, and N-type Ohm contact electrode is provided with N-type pad, is positioned at extension, and N-type pad is for being connected with N-type electrode.Described n type semiconductor layer and p type semiconductor layer are GaN semiconductor layer.
The beneficial effect of the technical solution of the utility model is: be designed to the Ohm contact electrode of strip, make flip LED chips can utilize soldering to encapsulate, compare eutectic welding, cost is lower; Solve the inhomogeneous problem of CURRENT DISTRIBUTION between the P type of present flip LED chips and N type semiconductor, improved the luminous efficiency of LED chip.
Accompanying drawing explanation
Fig. 1 is the structural representation of N-type Ohm contact electrode of the present utility model.
Fig. 2 is the phantom that in Fig. 1, N-type ohm connects the structure of true electrode.
Fig. 3 is the front view of N-type Ohm contact electrode part of the flip LED chips of embodiment 1.
Fig. 4 is the cutaway view of the flip LED chips of embodiment 1.
Fig. 5 is the front view of N-type Ohm contact electrode part of the flip LED chips of embodiment 2.
Fig. 6 is the front view of N-type Ohm contact electrode part of the flip LED chips of embodiment 3.
Fig. 7 is the front view of N-type Ohm contact electrode part of the flip LED chips of embodiment 4.
Embodiment
Below in conjunction with accompanying drawing and tool the present embodiment, the technical solution of the utility model is elaborated.
Shown in Fig. 4, cross-section structure diagram for embodiment 1 of the present utility model, the top is sapphire substrate 1, the downside of Sapphire Substrate is N-GaN layer 2, the downside of N-GaN layer is quantum well layer 3, downside is P-GaN layer 4 again, P-GaN layer downside covers P type Ohm contact electrode layer 5, in chip, offer a groove 6, groove extends on N-GaN layer 2 through P type Ohm contact electrode layer 5, P-GaN layer 4 and quantum well layer 3 always, and the part in the lower side trench of N-GaN is N-type Ohm contact electrode 7.
Shown in Fig. 1, Fig. 2, Fig. 3; for the N-type Ohm contact electrode of embodiment 1 and the structural representation of groove; wherein N-type Ohm contact electrode and groove growth bar shaped; be placed in the middle part of chip; N-type Ohm contact electrode is positioned at groove along also groove distribution; the sidewall of N-type Ohm contact electrode and groove leaves certain distance, and the middle protective layer with insulation is filled.The two strip metal electrodes 8 that also have at P type Ohm contact electrode layer downside, the both sides of the parallel distribution N-type of metal electrode Ohm contact electrode, guaranteed that arbitrfary point on N-type Ohm contact electrode is all identical to the beeline of metal electrode, make CURRENT DISTRIBUTION even, further also the two ends of metal electrode are connected respectively, form a tetragonal metal electrode.One end of groove is provided with an extension 61, width in extension is wider than other parts of groove, while is in the position of extension, it is larger that N-type Ohm contact electrode can be done, form a N-type pad 71, N-type pad is used for being connected with N-type welding electrode and manufacturing process is tested chip.On metal electrode, also designed a P type pad 81, be convenient to be connected with P type welding electrode.
Shown in Fig. 4; after having made Ohm contact electrode; the protective layer 10 of making reflector 9 and insulation below P type Ohm contact electrode layer in the bottom of chip; reflector can adopt Al or Ag material; then on metal electrode, make P type welding electrode 11; on N-type Ohm contact electrode, make N-type welding electrode 12, and make two welding electrode bottom welding faces concordant.
Shown in Fig. 5, configuration diagram for the N-type Ohm contact electrode of the flip LED chips of embodiment 2 of the present utility model, with the difference of embodiment 1 be groove and the N-type Ohm contact electrode that has two strips, between two N-type Ohm contact electrodes, increase by a strip metal electrode, compare embodiment 1 and there is more uniform CURRENT DISTRIBUTION.
Shown in Fig. 6, configuration diagram for the N-type Ohm contact electrode of the flip LED chips of embodiment 3 of the present utility model, with the difference of embodiment 1 be groove and the N-type Ohm contact electrode that has three strips, between adjacent two N-type Ohm contact electrodes, increase respectively by a strip metal electrode, compare embodiment 1 and there is more uniform CURRENT DISTRIBUTION.
Shown in Fig. 7, configuration diagram for the N-type Ohm contact electrode of the flip LED chips of embodiment 8 of the present utility model, on the basis of embodiment 2, improve, same one end of the groove of two strips and N-type Ohm contact electrode is connected into U-shaped shape, and N-type pad is arranged in the middle of the bottom of U-shaped shape.
Above embodiment is preferred embodiment of the present utility model; the utility model is not limited to above-described embodiment; for those of ordinary skills; the any apparent change of doing on the basis that does not deviate from the utility model know-why, all belongs to the protection range of design of the present utility model and claims.
Claims (10)
1. an ohmic contact electrode structure for flip LED chips, chip comprises Sapphire Substrate, be arranged on the n type semiconductor layer of Sapphire Substrate downside and be placed in the p type semiconductor layer of n type semiconductor layer downside,
It is characterized in that: p type semiconductor layer downside is coated with P type Ohm contact electrode layer, on p type semiconductor layer and P type Ohm contact electrode layer, be provided with the groove of strip, groove extends to n type semiconductor layer from the bottom surface of P type Ohm contact electrode layer, the part of the downside of n type semiconductor layer in groove is provided with N-type Ohm contact electrode, and N-type Ohm contact electrode growth bar shaped distributes along groove.
2. ohmic contact electrode structure according to claim 1, it is characterized in that: in described groove, be provided with at least one extension, the width of extension is wider than other parts of groove, and N-type Ohm contact electrode is provided with N-type pad, be positioned at extension, N-type pad is for being connected with N-type electrode.
3. ohmic contact electrode structure according to claim 1, is characterized in that: described N-type Ohm contact electrode is identical with the shape of groove, and N-type Ohm contact electrode and groove are respectively one to three, are parallel to each other and equidistantly arrange.
4. ohmic contact electrode structure according to claim 3, is characterized in that: described N-type Ohm contact electrode is two, and same one end of two N-type Ohm contact electrodes is connected into U-shaped shape, and N-type pad is arranged in the middle of the bottom of U-shaped shape.
5. according to the ohmic contact electrode structure described in claim 1,2,3 or 4, it is characterized in that: described P type Ohm contact electrode layer downside is provided with at least one metal electrode, and metal electrode becomes parallel arrangement with N-type Ohm contact electrode.
6. ohmic contact electrode structure according to claim 5, is characterized in that: described metal electrode is 2～4, mutually alternately arranges with N-type Ohm contact electrode.
7. ohmic contact electrode structure according to claim 5, is characterized in that: described P type Ohm contact electrode layer downside is also provided with P type pad, and each metal electrode is connected conducting with P type pad, and P type pad is for being connected with P type electrode.
8. a flip LED chips, comprises Sapphire Substrate; N type semiconductor layer, be arranged on Sapphire Substrate downside; P type semiconductor layer, be placed in n type semiconductor layer downside, between n type semiconductor layer and p type semiconductor layer, be provided with quantum well layer, luminous after energising; P type Ohm contact electrode layer, is arranged on p type semiconductor layer downside, is provided with metal electrode on it, and metal electrode is connected with P type electrode; N-type Ohm contact electrode, is arranged at n type semiconductor layer downside, is connected with N-type electrode on it;
It is characterized in that: described p type semiconductor layer and P type Ohm contact electrode layer are provided with the groove of a strip, groove extends to n type semiconductor layer from the bottom surface of P type Ohm contact electrode layer, the part of the downside of n type semiconductor layer in groove is provided with the N-type Ohm contact electrode identical with the shape of groove, N-type Ohm contact electrode growth bar shaped distributes along groove, N-type Ohm contact electrode and groove are respectively one to three, described P type Ohm contact electrode layer downside is provided with at least one metal electrode, and metal electrode becomes parallel arrangement with N-type Ohm contact electrode.
9. flip LED chips according to claim 8, it is characterized in that: in described groove, be provided with at least one extension, the width of extension is wider than other parts, and N-type Ohm contact electrode is provided with N-type pad, be positioned at extension, N-type pad is for being connected with N-type electrode.
10. flip LED chips according to claim 8, is characterized in that: described n type semiconductor layer and p type semiconductor layer are GaN semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320550892.3U CN203521454U (en) | 2013-09-05 | 2013-09-05 | Ohmic contact electrode structure of flip-chip LED chip and flip-chip LED chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320550892.3U CN203521454U (en) | 2013-09-05 | 2013-09-05 | Ohmic contact electrode structure of flip-chip LED chip and flip-chip LED chip |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456856A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inversion LED chip and ohmic contact electrode structure of inversion LED chip |
| CN104821351A (en) * | 2015-05-05 | 2015-08-05 | 湘能华磊光电股份有限公司 | Manufacturing method of inversion structure of III semiconductor light-emitting device |
| CN104821350A (en) * | 2015-05-05 | 2015-08-05 | 湘能华磊光电股份有限公司 | Manufacturing method of inversion structure of III semiconductor light-emitting device |
| CN104952995A (en) * | 2015-05-05 | 2015-09-30 | 湘能华磊光电股份有限公司 | Inverted structure of III conductor light-emitting device |
| CN110047983A (en) * | 2014-07-01 | 2019-07-23 | 首尔伟傲世有限公司 | Semiconductor light-emitting elements |
-
2013
- 2013-09-05 CN CN201320550892.3U patent/CN203521454U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456856A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inversion LED chip and ohmic contact electrode structure of inversion LED chip |
| CN110047983A (en) * | 2014-07-01 | 2019-07-23 | 首尔伟傲世有限公司 | Semiconductor light-emitting elements |
| CN110047983B (en) * | 2014-07-01 | 2022-04-29 | 首尔伟傲世有限公司 | Semiconductor light emitting element |
| CN104821351A (en) * | 2015-05-05 | 2015-08-05 | 湘能华磊光电股份有限公司 | Manufacturing method of inversion structure of III semiconductor light-emitting device |
| CN104821350A (en) * | 2015-05-05 | 2015-08-05 | 湘能华磊光电股份有限公司 | Manufacturing method of inversion structure of III semiconductor light-emitting device |
| CN104952995A (en) * | 2015-05-05 | 2015-09-30 | 湘能华磊光电股份有限公司 | Inverted structure of III conductor light-emitting device |
| CN104952995B (en) * | 2015-05-05 | 2017-08-25 | 湘能华磊光电股份有限公司 | A kind of inverted structure of III light emitting semiconductor device |
| CN104821351B (en) * | 2015-05-05 | 2017-08-29 | 湘能华磊光电股份有限公司 | The preparation method of III light emitting semiconductor device inverted structure |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANDONG JINGTAIXING PHOTOELECTRIC TECHNOLOGY CO., Free format text: FORMER OWNER: SHENZHEN ZHIXUNDA PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20140827 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518057 SHENZHEN, GUANGDONG PROVINCE TO: 271208 TAIAN, SHANDONG PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20140827 Address after: 271208 Xintai Economic Development Zone, Shandong, Tai'an Patentee after: SHANDONG PROSPEROUS STAR OPTOELECTRONICS Co.,Ltd. Address before: 518057 B, B404-406 building, Shenzhen Research Institute, Shenzhen District, Nanshan District hi tech Zone, Guangdong, China Patentee before: SHENZHEN WISDOW REACHES INDUSTRY Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140402 |